JP5659821B2 - Sn合金バンプの製造方法 - Google Patents
Sn合金バンプの製造方法 Download PDFInfo
- Publication number
- JP5659821B2 JP5659821B2 JP2011013661A JP2011013661A JP5659821B2 JP 5659821 B2 JP5659821 B2 JP 5659821B2 JP 2011013661 A JP2011013661 A JP 2011013661A JP 2011013661 A JP2011013661 A JP 2011013661A JP 5659821 B2 JP5659821 B2 JP 5659821B2
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- Prior art keywords
- layer
- alloy
- bump
- composition
- plating
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- 229910001128 Sn alloy Inorganic materials 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 88
- 239000000956 alloy Substances 0.000 claims description 88
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 43
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000009713 electroplating Methods 0.000 claims description 35
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 19
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 19
- 150000002739 metals Chemical class 0.000 claims description 18
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 177
- 239000000203 mixture Substances 0.000 description 51
- 238000007747 plating Methods 0.000 description 37
- 238000000034 method Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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Description
例えば、特許文献1には、基材上にSn−Ag−Cu三元系薄膜を形成する方法であって、基材をSn化合物とAg化合物とCu化合物とを含んだめっき浴に浸漬し、電気めっきにより形成する方法が記載されている。
また、特許文献2には、Sn−Ag合金めっきを行い、次いでSn−Cu合金めっきを行った後、得られた多層合金めっき層をリフローさせるSn−Ag−Cuハンダ合金の形成方法が提案されている。
すなわち、近年の微細化によりファインピッチ化されて高アスペクト比パターンとなったレジストの開口部(ビア)に合金めっきを形成する場合、Sn−Ag−Cu合金めっき液を使用する場合或いはSn−AgとSn−Cuとのめっき液による二層めっきを行う場合では、開口部の底部においてAgやCuの析出が抑制されるため、底部ほどAgやCuが少なくなってSnが多く析出してしまう不都合があった。このため、開口部の高さ方向で組成のばらつきが生じ、結果としてSn合金バンプの組成コントロールが困難であるという問題があった。特に、何度も電解めっきを繰り返すとめっき液中の酸濃度が高くなって粘度が上がり、より一層Agが底部に析出し難くなるため、リフロー後に安定した組成を得ることが困難であった。
すなわち、このSn合金バンプの製造方法では、Sn層上にSn−Ag層を電解めっきにより形成し、Sn層とSn−Ag層とを溶融させるので、Ag析出による高さ方向のAg組成のばらつきを低減したSn−Ag合金バンプを形成することができる。
すなわち、このSn合金バンプの製造方法では、Sn層上に前記二種のうち一方との合金層およびSnと前記二種のうち他方との合金層の二層を電解めっきにより積層するので、合金層の二層をめっきする際に予め形成したSn層によって開口部の深さが軽減されることから、高さ方向の二種の金属の組成ばらつきを抑制することができる。
すなわち、このSn合金バンプの製造方法では、Sn層上にSn−Ag層とSn−Cu層との二層を電解めっきにより形成し、Sn層とSn−Ag層とSn−Cu層とを溶融させるので、AgやCuの析出による高さ方向のAgやCuの組成のばらつきを低減したSn−Ag−Cu合金バンプを形成することができる。
すなわち、本発明に係るSn合金バンプの製造方法によれば、電極上にSn層を電解めっきにより形成し、該Sn層上にSnと他の金属との合金層を電解めっきにより積層するので、高さ方向の他の金属の組成ばらつきを抑制することができ、各層を溶融して形成するバンプの組成を制御することができる。
したがって、本発明のSn合金バンプの製造方法によれば、高アスペクト比パターンに対応した組成均一性の高いSn合金バンプを得ることができ、ファインピッチ化に対応することが可能になる。
上記基板1は、半導体ウエハ、プリント基板またはヒートシンク基板などであり、表面にレジスト2がパターニングされて、1.0以上の高アスペクト比パターンでバンプ用の開口部2aが設けられている。
上記開口部2aは、例えば深さ:120μm、開口径:70μmとされ、アスペクト比が1.7の高アスペクト比パターンとされる。なお、バンプピッチは、100数十μmのファインピッチも可能である。
すなわち、第1実施形態において、Sn−Ag層である合金層4bは、リフロー処理後にSn層4aと溶融したSn合金バンプのAg組成に対応させ、Sn−AgめっきのみでSn合金バンプを形成する場合に比べてAg組成を高く設定している。例えば、Sn合金バンプの目標とするAg組成が2.5wt%である場合、Sn層4aと同じ高さのSn−Ag層(合金層4b)では、Ag組成を5wt%に設定する。
次に、図1の(b)に示すように、Sn層4a上にSn−Cu層である第1合金層24bとSn−Ag層である第2合金層24cとの二層を電解めっきにより積層して形成する。
例えば、上記各層の厚さは、Sn層4a:第1合金層24b(Sn−Cu層):第2合金層24c(Sn−Ag層)=1:1:3の比率で形成する。
なお、Sn層4a上に、第1合金層24b(Sn−Cu層)、第2合金層24c(Sn−Ag層)の順に積層しているが、逆に第2合金層24c(Sn−Ag層)、第1合金層24b(Sn−Cu層)の順に積層しても構わない。
まず、第1実施形態に対応した実施例1として、Snめっき液及びSn−Agめっき液の新液を用いて、以下の条件にて電解めっきを行った。
さらに、実施例2および比較例2として、約1000枚のウエハにめっき処理を行った後のSn−Agめっき液にて、実施例1および比較例1とそれぞれ同条件にて電解めっきを実施し、上記と同様のリフロー処理でSn合金バンプを形成した。なお、これらの液中のAg濃度は、実施例1および比較例1の条件と等しい濃度に設定した。
すなわち、実施例1と同様のウエハを用い、Snめっきを厚さ:24μm、膜中Cu組成が2.5wt%になる条件にてSn−Cuめっきを厚さ24μm、膜中Ag組成が5wt%になる条件にてSn−Agめっきを厚さ:72μmで三層めっきを行い、リフロー処理後のSn合金バンプの組成がSn−3Ag−0.5Cuとなるように電解めっきを実施した。さらに、レジスト除去後にリフロー処理を行い、実施例2のSn合金バンプを形成した。
Claims (2)
- Snと他の一種または二種以上の金属との合金で形成されたSn合金バンプの製造方法であって、
基板の上に形成されているレジスト開口部内の電極上にSn層を電解めっきにより形成する工程と、
前記Sn層上にSnと前記他の金属との合金層を電解めっきにより積層する工程と、
前記レジストを除去した後に前記Sn層と前記合金層とを溶融してSn合金バンプを形成する工程とを有し、
前記他の金属が、二種の金属であり、
前記Sn層上にSnと前記二種のうち一方との合金層およびSnと前記二種のうち他方との合金層の二層を電解めっきにより積層する工程と、
前記レジストを除去した後に前記Sn層と積層された前記合金層の二層とを溶融してSn合金バンプを形成する工程とを有することを特徴とするSn合金バンプの製造方法。 - 請求項1に記載のSn合金バンプの製造方法において、
前記二種のうち一方の金属がAgであると共に他方の金属がCuであり、
前記Sn層上にSn−Ag層とSn−Cu層との二層を電解めっきにより形成する工程と、
前記レジストを除去した後に前記Sn層と前記Sn−Ag層と前記Sn−Cu層とを溶融して前記Sn合金バンプとしてSn−Ag−Cuバンプを形成する工程とを有することを特徴とするSn合金バンプの製造方法。
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EP12739744.6A EP2669937B1 (en) | 2011-01-26 | 2012-01-16 | METHOD FOR MANUFACTURING Sn ALLOY BUMP |
US13/981,862 US8822326B2 (en) | 2011-01-26 | 2012-01-16 | Method for manufacturing Sn alloy bump |
CN201280006685.XA CN103339718B (zh) | 2011-01-26 | 2012-01-16 | Sn合金隆起物的制造方法 |
KR1020137018729A KR101842738B1 (ko) | 2011-01-26 | 2012-01-16 | Sn 합금 범프의 제조 방법 |
PCT/JP2012/000217 WO2012101975A1 (ja) | 2011-01-26 | 2012-01-16 | Sn合金バンプの製造方法 |
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