WO2016051953A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2016051953A1 WO2016051953A1 PCT/JP2015/071990 JP2015071990W WO2016051953A1 WO 2016051953 A1 WO2016051953 A1 WO 2016051953A1 JP 2015071990 W JP2015071990 W JP 2015071990W WO 2016051953 A1 WO2016051953 A1 WO 2016051953A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 230000002093 peripheral effect Effects 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 89
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
以下、実施例について添付図面を参照して説明する。本実施例に係る半導体装置は、RC-IGBTであり、IGBTとしての機能と、FWD(フリーホイールダイオードFree Wheeling Diode)としての機能とを有している。IGBTおよびFWDは逆並列の状態で配置されており、逆導通型の半導体装置が形成されている。
上記実施例では、半導体基板10が複数のIGBT領域2および複数のダイオード領域3を備えていたが、IGBT領域2およびダイオード領域3は単数であってもよい。また、上記実施例では、結晶欠陥領域100が、半導体基板10の表面を平面視したときにウェル領域41と重なる位置まで延びていた。しなしながら、結晶欠陥領域100は、ダイオード領域3の長手方向において、ダイオード領域3から周辺領域4に侵入していれば、必ずしもウェル領域41と重なる位置まで延びていなくてもよい。
上記実施例では、結晶欠陥領域100がダイオード領域3の長手方向において半導体基板10の端部まで形成されていたが、この構成に限定されるものではない。他の実施形態では、図4に示すように、結晶欠陥領域100が半導体基板10の端部まで形成されておらず、結晶欠陥領域100の一方の周辺領域側端部101がウェル領域41の下方に位置していてもよい。ダイオード領域3の長手方向(x方向)における結晶欠陥領域100の周辺領域側端部101は、周辺領域4内に位置している。結晶欠陥領域100は、ダイオード領域3から周辺領域4に突出するように形成されている。この構成においても、結晶欠陥領域100は、ウェル領域41と重なる位置まで周辺領域4内に侵入している。
また、上記実施形態では、ダイオード領域3の長手方向において、結晶欠陥領域100が、アクティブ領域1aとアクティブ領域1bの間で隣り合うダイオード領域3にわたって連続的に形成されていていたが、この構成に限定されるものではない。他の実施形態では、図5に示すように、結晶欠陥領域100が隣り合うダイオード領域3にわたって連続的に形成されておらず、結晶欠陥領域100の他方の周辺領域側端部101がウェル領域41の下方に位置していてもよい。ダイオード領域3の長手方向(x方向)における結晶欠陥領域100の周辺領域側端部101は、周辺領域4内に位置している。結晶欠陥領域100は、ダイオード領域3から周辺領域4に突出するように形成されている。この構成においても、結晶欠陥領域100は、ウェル領域41と重なる位置まで周辺領域4内に侵入している。
上記の各実施例では、ヘリウムイオン等の荷電粒子が注入されることにより結晶欠陥領域100が形成されていた。そして、結晶欠陥領域100が、キャリアが再結合して消滅する領域として機能していた。しかしながら、キャリアが再結合して消滅する領域は、結晶欠陥領域100に限定されるものではない。例えば他の実施例では、ドリフト領域50に金属元素の不純物が注入されることにより、ドリフト領域50に再結合中心が導入されてもよい。ドリフト領域50に再結合中心が導入された領域ではキャリアが再結合して消滅する。このような領域を再結合中心導入領域と称する。上記の各実施例で説明した結晶欠陥領域100は、再結合中心導入領域の一例である。再結合中心導入領域は、再結合中心を積極的に導入した領域であり、周囲よりも再結合中心の濃度が高い領域である。正孔が過度に集中する個所に再結合中心導入領域を積極的に形成しておくと、再結合中心において正孔が電子と再結合して消滅し、正孔の集中が緩和され、半導体装置が破壊される現象を抑制することができる。
以下に実施例を用いて本明細書に開示の技術をさらに詳細に説明する。実施例では、図6に示す半導体装置のモデルを設定してコンピュータ解析をし、半導体装置におけるホールの量を調べた。より詳細には、ダイオード領域3内のカソード領域32の周辺領域側端部321から周辺領域4内の結晶欠陥領域100の周辺領域側端部101までの距離Lを様々に変えて、カソード領域32の周辺領域側端部321に近い部分におけるホールの量を解析した。結果を図7に示す。
2;IGBT領域
3;ダイオード領域
4;周辺領域
10;半導体基板
11;表面電極
12;裏面電極
21;エミッタ領域
22;ボディ領域
22a;ボディコンタクト領域
22b;低濃度ボディ領域
23;コレクタ領域
31;アノード領域
31a;アノードコンタクト領域
31b;低濃度アノード領域
32;カソード領域
41;ウェル領域
42;裏面領域
50;ドリフト領域
51;バッファ領域
60;トレンチゲート
61;トレンチ
62;ゲート絶縁膜
63;ゲート電極
64;絶縁膜
70;ダミートレンチゲート
71;トレンチ
72;ゲート絶縁膜
73;ゲート電極
74;絶縁膜
100;結晶欠陥領域
Claims (4)
- 同一半導体基板にIGBTとダイオードが形成されている半導体装置であり、半導体基板と、前記半導体基板の表面に形成されている表面電極と、前記半導体基板の裏面に形成されている裏面電極を備えており、
前記半導体基板に、アクティブ領域と、周辺領域と、再結合中心導入領域が形成されており、
前記アクティブ領域では、前記半導体基板の前記表面を平面視したときにIGBT領域とダイオード領域が並置されており、
前記ダイオード領域では、前記表面電極に導通するアノード領域と、前記裏面電極に導通するカソード領域と、前記アノード領域と前記カソード領域の間に位置するダイオードドリフト領域が形成されており、
前記周辺領域は、前記半導体基板の前記表面を平面視したときに前記アクティブ領域の周辺に位置しており、前記半導体基板の前記表面から前記アノード領域より深い位置まで達しているとともに前記表面電極に導通しているp型のウェル領域と、前記ウェル領域の裏面側に位置しているとともに前記ダイオードドリフト領域と繋がっている周辺ドリフト領域を備えており、
前記再結合中心導入領域では再結合中心が導入されて周囲の再結合中心の濃度よりも高くなっており、前記再結合中心導入領域が、前記ダイオード領域の長手方向に沿って、前記ダイオードドリフト領域から前記周辺ドリフト領域にまで連続して延びている、
半導体装置。 - 前記カソード領域の前記周辺領域側端部から前記再結合中心導入領域の前記周辺領域側端部までの距離が120μm以上である、請求項1に記載の半導体装置。
- 前記再結合中心導入領域が、前記ダイオードドリフト領域から前記ウェル領域の外周側にまで連続して延びている、請求項2に記載の半導体装置。
- 前記アクティブ領域では、前記半導体基板の前記表面を平面視したときに複数の前記IGBT領域と前記ダイオード領域が交互に繰り返して並置されており、
前記周辺領域が、前記IGBT領域と前記ダイオード領域が交互に並置された方向において前記IGBT領域に隣接している、請求項1から3のいずれかの1項に記載の半導体装置。
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