WO2015033686A1 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- WO2015033686A1 WO2015033686A1 PCT/JP2014/069405 JP2014069405W WO2015033686A1 WO 2015033686 A1 WO2015033686 A1 WO 2015033686A1 JP 2014069405 W JP2014069405 W JP 2014069405W WO 2015033686 A1 WO2015033686 A1 WO 2015033686A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 208
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 203
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 184
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 92
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 22
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000003763 carbonization Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 18
- 210000000746 body region Anatomy 0.000 description 17
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Definitions
- the present invention relates to a silicon carbide semiconductor device and a method for manufacturing the same, and more particularly to a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage and a method for manufacturing the same.
- silicon carbide has been adopted as a material constituting a semiconductor device in order to enable a semiconductor device to have a high breakdown voltage and low loss.
- Silicon carbide is a wide band gap semiconductor having a larger band gap than silicon that has been widely used as a material constituting a semiconductor device. Therefore, by adopting silicon carbide as a material constituting the semiconductor device, it is possible to achieve a high breakdown voltage and a low on-resistance of the semiconductor device.
- a semiconductor device that employs silicon carbide as a material has an advantage that a decrease in characteristics when used in a high temperature environment is small as compared with a semiconductor device that employs silicon as a material.
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- a MOSFET is a semiconductor device that controls whether or not an inversion layer is formed in a channel region with a predetermined threshold voltage as a boundary, thereby conducting and interrupting current.
- Patent Document 1 Japanese Patent Laying-Open No. 2011-82454 discloses a stable silicon carbide semiconductor device that suppresses channel resistance and does not vary with time in threshold voltage.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage, and a method for manufacturing the same.
- a silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film made of silicon oxide formed on the surface of the silicon carbide substrate, and a gate electrode formed on the gate insulating film. Yes.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the silicon carbide substrate and the gate insulating film is 3 ⁇ 10 19 cm ⁇ 3 or more.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the gate insulating film and the gate electrode is 1 ⁇ 10 20 cm ⁇ 3 or less.
- a method for manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate, a step of forming a gate insulating film made of silicon oxide on the surface of the silicon carbide substrate, and an atmosphere containing nitrogen.
- the silicon carbide substrate is not heated at a temperature of 900 ° C. or higher in an atmosphere containing 10% or more of nitrogen after the step of forming the gate electrode.
- a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage can be provided. Moreover, according to the method for manufacturing a silicon carbide semiconductor device according to the present invention, a silicon carbide semiconductor device with improved channel mobility and high threshold voltage can be manufactured.
- FIG. 5 is a graph showing the relationship between time and heating temperature in steps (S20) to (S40) of the method for manufacturing a silicon carbide semiconductor device according to the present embodiment. It is the schematic for demonstrating the process (S50) in the manufacturing method of the silicon carbide semiconductor device which concerns on this embodiment. It is the schematic for demonstrating the process (S60) in the manufacturing method of the silicon carbide semiconductor device which concerns on this embodiment. It is a graph which shows nitrogen concentration distribution along the thickness direction of SiC-MOSFET.
- a silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film made of silicon oxide formed on the surface of the silicon carbide substrate, and a gate electrode formed on the gate insulating film. It has.
- the maximum value of the nitrogen concentration in the region within 10 nm from the interface between the silicon carbide substrate and the gate insulating film is 3 ⁇ 10 19 cm ⁇ 3 or more.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the gate insulating film and the gate electrode is 1 ⁇ 10 20 cm ⁇ 3 or less.
- the inventor has intensively studied to improve the channel mobility of the silicon carbide semiconductor device and increase the threshold voltage. As a result, it is possible to increase both channel mobility and threshold voltage by controlling the nitrogen concentration at the interface between the silicon carbide substrate and the gate insulating film and at the interface between the gate insulating film and the gate electrode. As a result, the present invention has been conceived. According to the study of the present inventors, by introducing nitrogen atoms so that the maximum value of the nitrogen concentration in the region within 10 nm from the interface between the silicon carbide substrate and the gate insulating film is 3 ⁇ 10 19 cm ⁇ 3 or more, The channel mobility of the silicon carbide semiconductor device is improved.
- the threshold voltage of the silicon carbide semiconductor device is increased by setting the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the gate insulating film and the gate electrode to be 1 ⁇ 10 20 cm ⁇ 3 or less. Can do.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the silicon carbide substrate and the gate insulating film is 3 ⁇ 10 19 cm ⁇ 3 or more, and the interface between the gate insulating film and the gate electrode The maximum value of the nitrogen concentration in a region within 10 nm from 1 ⁇ 10 20 cm ⁇ 3 or less. Therefore, according to the silicon carbide semiconductor device, a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage can be provided. Note that the maximum value of the nitrogen concentration in the region within 10 nm from the interface can be measured as described in a specific example of the present embodiment described below.
- a region having a nitrogen concentration of 1 ⁇ 10 19 cm ⁇ 3 or more in the gate insulating film may occupy a region of 80% or more in the thickness direction.
- the threshold voltage of the silicon carbide semiconductor device can be further increased.
- the gate electrode may contain polysilicon.
- the gate electrode includes polysilicon
- the polysilicon reacts with silicon oxide constituting the gate insulating film, and as a result, the nitrogen concentration tends to increase at the interface between the gate insulating film and the gate electrode. Therefore, when the gate electrode includes polysilicon, the above silicon carbide semiconductor device in which the nitrogen concentration at the interface between the gate insulating film and the gate electrode is suppressed can be suitably used.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the silicon carbide substrate and the gate insulating film may be 1 ⁇ 10 21 cm ⁇ 3 or less.
- the maximum value of the nitrogen concentration in a region within 10 nm from the interface between the gate insulating film and the gate electrode may be 3 ⁇ 10 19 cm ⁇ 3 or less. Thereby, the threshold voltage of the silicon carbide semiconductor device can be further increased.
- the surface of the silicon carbide substrate may have an off angle of 8 ° or less with respect to the (0001) plane.
- a method for manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate, a step of forming a gate insulating film made of silicon oxide on the surface of the silicon carbide substrate, and nitrogen.
- the silicon carbide substrate is not heated at a temperature of 900 ° C. or higher in an atmosphere containing 10% or more of nitrogen after the step of forming the gate electrode.
- the present inventor has intensively studied a method for manufacturing a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage. As a result, the following knowledge was obtained and the present invention was conceived.
- the silicon carbide substrate on which the gate insulating film is formed in a nitrogen-containing atmosphere at a predetermined temperature or higher, sufficient nitrogen is provided to improve channel mobility at the interface between the silicon carbide substrate and the gate insulating film.
- the concentration can be secured.
- the silicon carbide substrate on which the gate insulating film is formed is heated at a temperature of 1100 ° C. or higher in an atmosphere containing nitrogen. Thereby, a sufficient nitrogen concentration is secured at the interface between the silicon carbide substrate and the gate insulating film, and as a result, the channel mobility of the silicon carbide semiconductor device is improved.
- the method for manufacturing the silicon carbide semiconductor device is performed so that the silicon carbide substrate is not heated at a temperature of 900 ° C. or higher in an atmosphere containing 10% or more of nitrogen after the gate electrode is formed on the gate insulating film. Is done.
- a silicon carbide semiconductor device having improved channel mobility and a high threshold voltage can be manufactured.
- the “atmosphere containing nitrogen” is an atmosphere containing a gas containing nitrogen atoms, for example, nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen (N 2 ), or ammonia (NH 3 )
- An atmosphere including gas is a gas that can contribute to the introduction of nitrogen atoms into the interface.
- the “atmosphere containing 10% or more of nitrogen” means, for example, a gas containing nitrogen atoms such as nitric oxide (NO), nitrous oxide (N 2 O), nitrogen (N 2 ), and ammonia (NH 3 ).
- the silicon carbide substrate is heated at a temperature of 1100 ° C. or more in an atmosphere containing an inert gas after the step of heating the silicon carbide substrate and before the step of forming the gate electrode.
- the process of heating may be further provided.
- the aforementioned inert gas such as argon (Ar), helium (He) or nitrogen (N 2) or the like can be used.
- the method for manufacturing the silicon carbide semiconductor device may further include a step of forming a source electrode on the silicon carbide substrate after the step of forming the gate electrode.
- the substrate may be heated at a temperature of 900 ° C. or higher in an atmosphere containing less than 10% nitrogen.
- the source electrode can be formed while suppressing an increase in nitrogen concentration at the interface between the gate insulating film and the gate electrode.
- the “atmosphere containing less than 10% nitrogen” is defined in the same manner as the above “atmosphere containing 10% or more nitrogen”.
- the silicon carbide substrate may not be heated at a temperature of 1100 ° C. or higher in an atmosphere containing 10% or more of nitrogen after the step of forming the gate electrode. Thereby, an increase in the nitrogen concentration at the interface between the gate insulating film and the gate electrode can be more reliably suppressed.
- the silicon carbide substrate in the step of heating the silicon carbide substrate, from nitric oxide (NO), nitrous oxide (N 2 O), nitrogen (N 2 ), and ammonia (NH 3 ).
- the silicon carbide substrate may be heated in an atmosphere containing at least one gas selected from the group consisting of:
- nitrogen atoms are introduced into the interface between the silicon carbide substrate and the gate insulating film, and a sufficient nitrogen concentration is secured at the interface. Easy to do.
- a silicon carbide (SiC) semiconductor device 1 is a vertical Di (Double Implanted) MOSFET, and includes a silicon carbide (SiC) substrate 10, a gate insulating film 20, and a gate electrode. 30, a source electrode 40, a drain electrode 50, and an upper source electrode 41.
- SiC silicon carbide
- the surface 10A of the SiC substrate 10 has an off angle of 8 ° or less with respect to the (0001) plane, and preferably has an off angle of 4 ° or less.
- the surface 10A of the SiC substrate 10 is not limited to this, and may be, for example, the (0-33-8) plane.
- the SiC substrate 10 mainly includes a base substrate 11 and a silicon carbide (SiC) layer 12 formed by epitaxial growth on the surface 11A of the base substrate 11.
- SiC layer 12 mainly has a drift region 13, a body region 14, a source region 15, and a contact region 16.
- the drift region 13 is formed on one surface 11 ⁇ / b> A of the base substrate 11.
- Drift region 13 has an n-type conductivity by including an n-type impurity such as nitrogen (N).
- Body region 14 is formed separately from each other in SiC layer 12.
- Body region 14 has a p-type conductivity by including a p-type impurity such as aluminum (Al) or boron (B).
- the source region 15 is formed in the body region 14 so as to include the surface 10A.
- Source region 15 has an n-type conductivity by including an n-type impurity such as phosphorus (P).
- the source region 15 has an n-type impurity concentration higher than that of the drift region 13.
- the contact region 16 is formed in the body region 14 so as to include the surface 10 ⁇ / b> A and to be adjacent to the source region 15.
- Contact region 16 has a p-type conductivity by including a p-type impurity such as aluminum (Al).
- the contact region 16 has a higher p-type impurity concentration than the body region 14.
- Gate insulating film 20 is formed in contact with surface 10 ⁇ / b> A of SiC substrate 10.
- Gate insulating film 20 is made of, for example, silicon oxide such as silicon dioxide (SiO 2 ), and is formed to extend from above one source region 15 to the other source region 15.
- the gate electrode 30 is formed in contact with the gate insulating film 20 (on the side opposite to the SiC substrate 10 side).
- the gate electrode 30 is made of a conductor such as polysilicon doped with impurities or aluminum (Al), for example, and is formed to extend from one source region 15 to the other source region 15.
- Source electrode 40 is formed in contact with surface 10 ⁇ / b> A (on source region 15 and contact region 16) of SiC substrate 10.
- the source electrode 40 is made of a material capable of making ohmic contact with the source region 15, for example, Ni x Si y (nickel silicide), Ti x Si y (titanium silicide), Al x Si y (aluminum silicide), and Ti x Al. y Si z (titanium aluminum silicide) or the like (x, y, z> 0).
- Drain electrode 50 is formed on the surface 10B opposite to the surface 10A of the SiC substrate 10. Drain electrode 50 is made of, for example, the same material as source electrode 40 and is in ohmic contact with SiC substrate 10.
- the maximum value of the nitrogen concentration is 3 ⁇ 10 19 cm ⁇ 3 or more and 1 ⁇ 10 21 cm ⁇ 3 or less, preferably 1 ⁇ 10 20 cm ⁇ . It is 3 or more and 5 ⁇ 10 20 cm ⁇ 3 or less. More specifically, a region including the interface 21 between the drift region 13 and the gate insulating film 20, a region including the interface 21 between the body region 14 and the gate insulating film 20, and an interface 21 between the source region 15 and the gate insulating film 20. In the region including the maximum value of the nitrogen concentration is within the above range.
- the region including the interface 21 is a region within 10 nm in the thickness direction of the SiC substrate 10 when viewed from the interface 21.
- the maximum value of the nitrogen concentration is 1 ⁇ 10 20 cm ⁇ 3 or less, preferably 3 ⁇ 10 19 cm ⁇ 3 or less, more preferably 1 ⁇ 10 19 cm ⁇ 3 or less.
- the region including the interface 22 is a region within 10 nm in the thickness direction of the SiC substrate 10 when viewed from the interface 22.
- the nitrogen concentration in the region within 10 nm from the interface 21 between the SiC substrate 10 and the gate insulating film 20 and the nitrogen concentration in the region within 10 nm from the interface 22 between the gate insulating film 20 and the gate electrode 30 are determined by secondary ion mass spectrometry.
- SIMS Secondary Ion Mass Spectrometry
- SiC semiconductor device 1 in a state where the voltage applied to gate electrode 30 is less than the threshold voltage, that is, in the off state, even if a voltage is applied between source electrode 40 and drain electrode 50, body region 14 drifts.
- the pn junction formed with the region 13 is reverse-biased and becomes non-conductive.
- a voltage equal to or higher than the threshold voltage is applied to the gate electrode 30
- an inversion layer is formed in the channel region of the body region 14 (the body region 14 below the gate electrode 30).
- the source region 15 and the drift region 13 are electrically connected, and a current flows between the source electrode 40 and the drain electrode 50.
- SiC semiconductor device 1 operates.
- the maximum value of the nitrogen concentration in the region within 10 nm from the interface 21 between the SiC substrate 10 and the gate insulating film 20 is 3 ⁇ 10 19 cm ⁇ 3 or more.
- the maximum value of the nitrogen concentration in the region within 10 nm from the interface 22 between the gate insulating film 20 and the gate electrode 30 is 1 ⁇ 10 20 cm ⁇ 3 or less.
- a region having a nitrogen concentration of 1 ⁇ 10 19 cm ⁇ 3 or more in the gate insulating film 20 may occupy 80% or more in the thickness direction, and the nitrogen concentration is 1 ⁇ 10 19 cm ⁇ 3.
- region which is the above may occupy the whole in the thickness direction.
- nitrogen atoms can be more uniformly distributed in the gate insulating film 20.
- the threshold voltage of SiC semiconductor device 1 can be further increased.
- the nitrogen concentration distribution along the thickness direction of the gate insulating film 20 can be obtained by SIMS measurement as in the above case.
- the gate electrode 30 may include polysilicon as described above.
- the polysilicon constituting the gate electrode 30 reacts with SiO 2 constituting the gate insulating film 20, and as a result, nitrogen atoms are easily introduced at the interface 22 between the gate insulating film 20 and the gate electrode 30. Therefore, when the gate electrode 30 contains polysilicon, the SiC semiconductor device 1 that can suppress the nitrogen concentration in the vicinity of the interface 22 between the gate insulating film 20 and the gate electrode 30 is suitable.
- the surface 10A of the SiC substrate 10 may have an off angle of 8 ° or less with respect to the (0001) plane as described above.
- the SiC substrate is compared with the case where the surface 10A is a surface on the carbon surface ((000-1) surface) side. Improvement of channel mobility due to introduction of nitrogen atoms near the interface 21 between the gate electrode 10 and the gate insulating film 20 becomes more remarkable.
- the SiC semiconductor device 1 according to the present embodiment can be manufactured (see FIG. 1).
- a SiC substrate preparation step is performed.
- SiC substrate 10 is prepared by performing steps (S11) to (S14) described below.
- a base substrate preparation step is performed.
- base substrate 11 is prepared by cutting an ingot (not shown) made of, for example, 4H—SiC.
- step (S12) an epitaxial growth layer forming step is performed.
- SiC layer 12 is formed on surface 11A of base substrate 11 by epitaxial growth.
- an ion implantation step is performed.
- this step (S ⁇ b> 13) referring to FIG. 4, first, for example, aluminum (Al) ions are implanted into SiC layer 12, whereby body region 14 is formed in SiC layer 12.
- phosphorus (P) ions are implanted into the body region 14 to form the source region 15 in the body region 14.
- aluminum (Al) ions are implanted into the body region 14 to form the contact region 16 adjacent to the source region 15 in the body region 14. A region where none of body region 14, source region 15, and contact region 16 is formed in SiC layer 12 becomes drift region 13.
- step (S14) an activation annealing step is performed as a step (S14).
- step (S14) referring to FIG. 4, the impurity introduced in step (S13) is activated by heating SiC layer 12. Thereby, desired carriers are generated in the impurity region.
- SiC substrate 10 is prepared by performing the above-described steps (S11) to (S14).
- FIG. 6 is a graph showing changes over time in the heating temperature of SiC substrate 10 in steps (S20) to (S40) (horizontal axis: time, vertical axis: heating temperature).
- a gate insulating film forming step is performed.
- this step (S20) referring to FIGS. 5 and 6, for example, by heating SiC substrate 10 at temperature T in an atmosphere containing oxygen, gate insulating film 20 made of SiO 2 is formed on surface 10A. Is done.
- a nitrogen annealing step is performed as a step (S30).
- SiC substrate 10 on which gate insulating film 20 is formed is formed of nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen (N 2 ), and ammonia.
- Heating is performed at a temperature (temperature T in FIG. 6) of 1100 ° C. or higher (preferably 1300 ° C. or higher and 1400 ° C. or lower) in an atmosphere containing at least one gas selected from the group consisting of (NH 3 ).
- nitrogen atoms are introduced in a region including interface 21 between SiC substrate 10 and gate insulating film 20.
- a POA (Post Oxidation Annealing) step is performed.
- a temperature of 1100 ° C. or higher preferably 1300 ° C. or higher and 1400 ° C. or lower
- an inert gas such as argon (Ar), nitrogen (N 2 ), or helium (He)
- SiC substrate 10 is heated at medium temperature T.
- the nitrogen atoms introduced into the interface 21 in the step (S30) are uniformly diffused in the gate insulating film 20.
- the heating temperature of SiC substrate 10 in the above steps (S20) to (S40) may be constant as shown in FIG. 6, but may be appropriately different in each step.
- a gate electrode forming step is performed.
- gate electrode 30 made of polysilicon is formed in contact with gate insulating film 20 by, for example, LPCVD (Low Pressure Chemical Vapor Deposition).
- an ohmic electrode forming step is performed.
- this step (S60) referring to FIG. 8, first, gate insulating film 20 is removed in a region where source electrode 40 is to be formed, and a region where source region 15 and contact region 16 are exposed is formed. In the region, a film made of nickel (Ni), for example, is formed. On the other hand, a film made of, for example, Ni is formed on surface 10B of SiC substrate 10. Thereafter, SiC substrate 10 is heated at a temperature of 900 ° C. or higher, and at least a part of the Ni film is silicided. Here, during the heating, SiC substrate 10 is exposed to an atmosphere containing less than 10% nitrogen. In this way, source electrode 40 and drain electrode 50 are formed on surfaces 10A and 10B of SiC substrate 10, respectively.
- the SiC semiconductor device 1 (see FIG. 1) is manufactured by performing the steps (S10) to (S60), and the manufacturing method of the SiC semiconductor device according to the present embodiment is completed.
- the SiC substrate 10 is 900 ° C. or higher (preferably 1100 ° C. or higher) in an atmosphere containing 10% or more of nitrogen. It is not heated at the temperature.
- the atmosphere containing nitrogen in the step (S30) As described above, in the method of manufacturing the SiC semiconductor device according to the present embodiment, after forming the gate insulating film 20 on the surface 10A of the SiC substrate 10 in the step (S20), the atmosphere containing nitrogen in the step (S30). Among these, SiC substrate 10 is heated at a temperature of 1100 ° C. or higher. Thereby, sufficient nitrogen atoms are introduced into a region including interface 21 between SiC substrate 10 and gate insulating film 20, and as a result, channel mobility of SiC semiconductor device 1 is improved. In the method of manufacturing the SiC semiconductor device, after the gate electrode 30 is formed on the gate insulating film 20 in the step (S50), the SiC substrate 10 is at a temperature of 900 ° C.
- the SiC semiconductor device 1 according to the present embodiment can be manufactured with improved channel mobility and a high threshold voltage.
- the manufacturing method of the SiC semiconductor device includes the SiC substrate 10 at a temperature of 1100 ° C. or higher in an atmosphere containing an inert gas after the nitrogen annealing step (S30) and before the gate electrode formation step (S50).
- a step of heating (S40) may be provided. Although this step (S40) is not an essential step, by carrying out this step, nitrogen atoms can be more uniformly distributed in the gate insulating film 20. As a result, the threshold voltage of SiC semiconductor device 1 can be further increased.
- the manufacturing method of the SiC semiconductor device may include a step (S60) of forming the source electrode 40 on the SiC substrate 10 after the gate electrode forming step (S50).
- SiC substrate 10 may be heated at a temperature of 900 ° C. or higher in an atmosphere having a nitrogen concentration of less than 10%. Thereby, it can suppress that an excessive nitrogen atom is introduce
- the SiC semiconductor device 1 which is a planar type MOSFET and the manufacturing method thereof have been described, but the present invention is not limited to this.
- a trench type MOSFET having a side wall surface composed of a (0-33-8) plane and a manufacturing method thereof are also possible.
- an SiC-MOSFET was manufactured by the method for manufacturing an SiC semiconductor device of the present embodiment (No. 1). Further, as a comparative example, steps (S10) to (S50) are carried out in the same manner as in the above embodiment, and after the step (S50), the SiC substrate is heated to 900 ° C. or higher in an atmosphere containing 10% or more of nitrogen. To produce a SiC-MOSFET (No. 2). As another comparative example, a SiC-MOSFET was fabricated without performing the nitrogen annealing step (S30) in the above example (No. 3).
- the nitrogen annealing step (S30) is not performed in the above embodiment, and the SiC substrate is heated at a temperature of 900 ° C. or higher in an atmosphere containing 10% or more of nitrogen after the step (S50).
- a SiC-MOSFET was produced (No. 4).
- FIG. 9 (Measurement of nitrogen concentration distribution) SIMS measurement was performed on the SiC-MOSFETs of the above examples and comparative examples, and the nitrogen concentration distribution shown in FIG. 9 was obtained.
- the horizontal axis indicates the distance (nm) in the thickness direction of the SiC-MOSFET, and the vertical axis indicates the nitrogen concentration (cm ⁇ 3 ).
- the region indicated by “p-Si” corresponds to the gate electrode
- the region indicated by “SiO 2 ” corresponds to the gate insulating film
- the region indicated by “SiC” corresponds to the SiC substrate.
- (A) in FIG. No. 1 is a nitrogen concentration distribution
- (B) is a comparative example.
- the channel mobility ( ⁇ ) was 15 to 20 cm 2 / Vs, and the threshold voltage was about 1.5V.
- the channel mobility was 15 to 20 cm 2 / Vs, while the threshold voltage dropped to 1.0V.
- the threshold voltage was as high as 2 to 3 V, while the channel mobility dropped to 5 to 8 cm 2 / Vs.
- No. 1 as another comparative example.
- the channel mobility was reduced to 5 to 8 cm 2 / Vs, and the threshold voltage was 1 to 1.8 V.
- the maximum value of the nitrogen concentration in the region within 10 nm from the interface between the SiC substrate and the gate insulating film is set to 3 ⁇ 10 19 cm ⁇ 3 or more, and within 10 nm from the interface between the gate insulating film and the gate electrode. It was found that both the channel mobility and the threshold voltage can be increased by setting the maximum value of the nitrogen concentration in the region to 1 ⁇ 10 20 cm ⁇ 3 or less.
- the silicon carbide semiconductor device and the manufacturing method thereof according to the present invention can be particularly advantageously applied to a silicon carbide semiconductor device and a manufacturing method thereof that are required to improve channel mobility and increase a threshold voltage.
- SiC silicon carbide
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Abstract
Description
まず、本発明の実施形態の内容を列記して説明する。
次に、本発明の実施形態の具体例を図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示す。また、負の指数については、結晶学上、”-”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。
(SiC-MOSFETの作製)
まず、実施例として、上記本実施形態のSiC半導体装置の製造方法によりSiC-MOSFETを作製した(No.1)。また、比較例として、上記実施例と同様に工程(S10)~(S50)までを実施し、当該工程(S50)の後にSiC基板を10%以上の窒素を含む雰囲気中において900℃以上の温度で加熱してSiC-MOSFETを作製した(No.2)。また、他の比較例として、上記実施例において窒素アニール工程(S30)を行わずにSiC-MOSFETを作製した(No.3)。また、さらに他の比較例として、上記実施例において窒素アニール工程(S30)を行わず、かつ工程(S50)の後にSiC基板を10%以上の窒素を含む雰囲気中において900℃以上の温度で加熱してSiC-MOSFETを作製した(No.4)。
上記実施例および比較例のSiC-MOSFETについてSIMS測定を行い、図9に示す窒素濃度分布を得た。図9中において、横軸はSiC-MOSFETの厚み方向における距離(nm)を示し、縦軸は窒素濃度(cm-3)を示している。また、図9中の「p-Si」に示す領域がゲート電極、「SiO2」に示す領域がゲート絶縁膜、「SiC」に示す領域がSiC基板にそれぞれ相当する。また、図9中の(A)が実施例であるNo.1の場合の窒素濃度分布であり、(B)が比較例であるNo.2の場合の窒素濃度分布である。そして、当該窒素濃度分布よりSiC基板とゲート絶縁膜との界面、およびゲート絶縁膜とゲート電極との界面から10nm以内の領域における窒素濃度の最大値をそれぞれ確認した。
上記実施例および比較例のSiC-MOSFETについてチャネル移動度および閾値電圧をそれぞれ測定した。上記実験結果を表1に示す。
図9を参照して、実施例であるNo.1(図9中(A))では、SiC基板とゲート絶縁膜との界面から10nm以内の領域における窒素濃度の最大値が3×1019cm-3以上(1×1020cm-3以上)であり、かつゲート絶縁膜とゲート電極との界面から10nm以内の領域における窒素濃度の最大値が1×1020cm-3以下であった。一方で、比較例であるNo.2(図9中(B))では、ゲート絶縁膜とゲート電極との界面から10nm以内の領域における窒素濃度の最大値が1×1020cm-3を超えていた。
Claims (11)
- 炭化珪素基板と、
前記炭化珪素基板の表面上に形成され、珪素酸化物からなるゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極とを備え、
前記炭化珪素基板と前記ゲート絶縁膜との界面から10nm以内の領域における窒素濃度の最大値が3×1019cm-3以上であり、
前記ゲート絶縁膜と前記ゲート電極との界面から10nm以内の領域における窒素濃度の最大値が1×1020cm-3以下である、炭化珪素半導体装置。 - 前記ゲート絶縁膜において窒素濃度が1×1019cm-3以上である領域は、厚み方向において80%以上の領域を占めている、請求項1に記載の炭化珪素半導体装置。
- 前記ゲート電極は、ポリシリコンを含む、請求項1または請求項2に記載の炭化珪素半導体装置。
- 前記炭化珪素基板と前記ゲート絶縁膜との前記界面から10nm以内の領域における窒素濃度の最大値が1×1021cm-3以下である、請求項1~請求項3のいずれか1項に記載の炭化珪素半導体装置。
- 前記ゲート絶縁膜と前記ゲート電極との界面から10nm以内の領域における窒素濃度の最大値が3×1019cm-3以下である、請求項1~請求項4のいずれか1項に記載の炭化珪素半導体装置。
- 前記炭化珪素基板の前記表面は、(0001)面に対して8°以下のオフ角を有する、請求項1~請求項5のいずれか1項に記載の炭化珪素半導体装置。
- 炭化珪素基板を準備する工程と、
前記炭化珪素基板の表面上に珪素酸化物からなるゲート絶縁膜を形成する工程と、
窒素を含む雰囲気中において1100℃以上の温度で前記ゲート絶縁膜が形成された前記炭化珪素基板を加熱する工程と、
前記炭化珪素基板を加熱する工程の後、前記ゲート絶縁膜上にゲート電極を形成する工程とを備え、
前記ゲート電極を形成する工程の後、10%以上の窒素を含む雰囲気中において900℃以上の温度で前記炭化珪素基板が加熱されない、炭化珪素半導体装置の製造方法。 - 前記炭化珪素基板を加熱する工程の後、前記ゲート電極を形成する工程の前に、不活性ガスを含む雰囲気中において1100℃以上の温度で前記炭化珪素基板を加熱する工程をさらに備える、請求項7に記載の炭化珪素半導体装置の製造方法。
- 前記ゲート電極を形成する工程の後、前記炭化珪素基板上にソース電極を形成する工程をさらに備え、
前記ソース電極を形成する工程では、10%未満の窒素を含む雰囲気中において900℃以上の温度で前記炭化珪素基板が加熱される、請求項7または請求項8に記載の炭化珪素半導体装置の製造方法。 - 前記ゲート電極を形成する工程の後、10%以上の窒素を含む雰囲気中において1100℃以上の温度で前記炭化珪素基板が加熱されない、請求項7~請求項9のいずれか1項に炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板を加熱する工程では、一酸化窒素、亜酸化窒素、窒素およびアンモニアからなる群より選択される少なくとも一のガスを含む雰囲気中において前記炭化珪素基板が加熱される、請求項7~請求項10のいずれか1項に記載の炭化珪素半導体装置の製造方法。
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- 2014-07-23 DE DE112014004061.4T patent/DE112014004061T5/de active Pending
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JP2015053372A (ja) | 2015-03-19 |
JP6206012B2 (ja) | 2017-10-04 |
CN105556675A (zh) | 2016-05-04 |
US20160211333A1 (en) | 2016-07-21 |
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