WO2014080662A1 - 銅粉及びその製造方法 - Google Patents
銅粉及びその製造方法 Download PDFInfo
- Publication number
- WO2014080662A1 WO2014080662A1 PCT/JP2013/066934 JP2013066934W WO2014080662A1 WO 2014080662 A1 WO2014080662 A1 WO 2014080662A1 JP 2013066934 W JP2013066934 W JP 2013066934W WO 2014080662 A1 WO2014080662 A1 WO 2014080662A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- copper powder
- mass
- less
- particles
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B15/00—Obtaining copper
- C22B15/0063—Hydrometallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
Definitions
- the present invention relates to copper powder and a method for producing the same.
- Patent Document 1 describes a method in which hydrazine or a hydrazine compound is added to a copper hydroxide slurry to produce copper oxide, and this copper oxide is reduced to copper by a hydrazine or hydrazine compound.
- Patent Document 2 describes that after the pH of a copper salt aqueous solution is adjusted to 12 or more before addition of a hydrazine-based reducing agent, a reducing sugar is added and then a hydrazine-based reducing agent is added.
- Patent Document 3 discloses a method in which a copper hydroxide slurry is reduced with a first reducing agent to form a cuprous oxide slurry, and the cuprous oxide slurry is reduced with a second reducing agent to obtain copper powder.
- hydrazine an aqueous ammonia solution is used in combination as a pH adjuster.
- the present applicant firstly mixed an oil phase in which a copper compound is dissolved in an organic solvent and an aqueous phase in which a reducing agent is dissolved in water.
- a method of reducing copper at the interface with the phase has been proposed (see Patent Document 4).
- Patent Document 5 describes a method for producing copper fine particles by adding a reducing agent and reducing and precipitating a metal from a copper compound solution.
- a nucleus in an independent monodispersed state composed of copper ultrafine particles is generated by adding a reducing agent, and then (ii) metallic copper is reduced and precipitated from a copper salt solution in the presence of the copper ultrafine particles and the reducing agent. Is described.
- Patent Document 6 discloses a method in which cupric sulfate, ethylene glycol, and sodium hydroxide are mixed to produce copper hydroxide, and then sucrose is added and then the liquid is heated to produce copper particles. Is described.
- Patent Documents 1 to 3 it is easy to obtain a primary particle having a submicron order particle size.
- Patent Documents 4 to 6 copper particles having a particle diameter in a range called nanoparticles are easily obtained.
- voids are likely to be generated between the particles due to the large particles, and this void increases the electrical resistance of the conductor film. It becomes.
- the particles are severely shrunk by heat applied in the firing step during film formation, making it difficult to form the film.
- a layer of a protective agent is usually provided on the particle surface to suppress aggregation.
- the sintering temperature rises and tends to be disadvantageous in terms of energy.
- An object of the present invention is to provide a copper powder and a method for producing the same that can eliminate the various drawbacks of the conventional technology described above.
- the present invention has an average particle diameter D of the primary particles is 0.15 ⁇ 0.6 .mu.m, is the ratio between the average particle diameter D BET in true sphere-equivalent based on the average particle diameter D and the BET specific surface area of the primary particles
- a copper powder having a D / D BET value of 0.8 to 4.0 and having no layer for suppressing aggregation between particles on the particle surface is provided. .
- the present invention also provides a reaction solution containing water and an organic solvent that is compatible with water and that can reduce the surface tension of water as a liquid medium, and contains a monovalent or divalent copper source, and hydrazine.
- the present invention provides a method for producing copper powder, characterized by mixing and reducing the copper source to produce copper particles.
- this invention provides the electroconductive composition containing the said copper powder and an organic solvent.
- FIG. 1A is an electron microscopic image of the copper powder obtained in Example 1
- FIG. 1B is an electron microscopic image of the conductor film obtained in Example 14.
- copper powder of the present invention will be described based on preferred embodiments thereof.
- copper powder when referred to as copper powder, it may refer to copper powder that is an aggregate of a plurality of copper particles, or may refer to individual copper particles that constitute copper powder, depending on the context.
- the average particle size D of the primary particles has a particle size in a submicron order range of 0.15 to 0.6 ⁇ m.
- the study mainly focused on nano-order copper particles having a particle size smaller than the above range, particularly 0.1 ⁇ m or less, and sub-micron order copper particles having a particle size larger than the above range.
- copper particles having a particle size in the above range By synthesizing copper particles having a particle size in the above range by adopting the production method described below, the present inventor unexpectedly aggregates particles without providing a protective layer on the surface of the copper particles.
- the present invention was completed by finding that a conductive film that is difficult to occur and formed from the copper particles is dense and has high conductivity.
- the average particle diameter D of the copper powder of the present invention By setting the average particle diameter D of the copper powder of the present invention to 0.6 ⁇ m or less, the copper powder is easily sintered at a low temperature when the conductor film is formed using the copper powder. Moreover, it is hard to produce a space
- the average particle diameter D of the primary particles of the copper powder is a volume average particle diameter obtained by converting a ferret diameter of a plurality of particles measured using an observation image by a scanning electron microscope into a sphere, specifically Can be measured by the measuring method described in the examples described later.
- the particle shape of the copper powder of the present invention is preferably spherical from the viewpoint of enhancing the dispersibility of the copper powder.
- the copper powder of the present invention does not have a layer for suppressing aggregation between particles (hereinafter also referred to as a protective layer) on the particle surface. It is considered that the copper powder of the present invention having the average particle diameter D in the above numerical range and having no protective layer on the particle surface greatly contributes to its good low-temperature sinterability.
- the protective layer is formed, for example, by treating the surface of the copper particles with a surface treatment agent in a subsequent step of producing the copper powder for the purpose of improving dispersibility and the like.
- surface treatment agents include various organic compounds such as fatty acids such as stearic acid, lauric acid, and oleic acid.
- a surface treatment agent which contain semimetal or metals, such as silicon, titanium, and zirconium, are also mentioned. Furthermore, even when a surface treatment agent is not used in the subsequent process of copper powder production, when copper powder is produced by a wet reduction method, it is protected by adding a dispersant to the reaction solution containing the copper source. A layer may be formed. Examples of such a dispersant include phosphates such as sodium pyrophosphate and organic compounds such as gum arabic.
- the copper powder preferably has as little content of the elements that form the protective layer as possible.
- the total content of carbon, phosphorus, silicon, titanium, and zirconium that have conventionally been present in the copper powder as a component of the protective layer is 0.10% by mass or less based on the copper powder.
- it is 0.08% by mass or less, more preferably 0.06% by mass or less.
- the carbon content of the copper particle is 0. .13% or more by mass.
- the lower limit is about 0.06% by mass, the low-temperature sinterability of the copper powder can be sufficiently enhanced. Also, if the carbon content of the copper powder is excessively large, a gas containing carbon is generated when the copper powder is baked to form a conductor film, and the film is cracked due to the gas. May peel off from the substrate. In the copper powder of the present invention, when the total content is low, problems due to the generation of carbon-containing gas can be prevented.
- the above-mentioned content is the sum of carbon, phosphorus, silicon, titanium and zirconium, and the content of each element is preferably as follows. That is, the carbon content is preferably 0% by mass or more and 0.08% by mass or less, and more preferably 0% by mass or more and 0.05% by mass or less.
- the phosphorus content is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the silicon content is preferably 0% by mass or more and 0.005% by mass or less, and more preferably 0% by mass or more and 0.001% by mass or less.
- the content of titanium is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the zirconium content is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the content of impurity elements be as small as possible in addition to the above-mentioned elements.
- impurities include sodium, sulfur and chlorine.
- these elements are derived from, for example, a reducing agent or a copper source used at the time of producing the copper powder, and are inevitably mixed into the copper powder.
- the total content of these three elements is preferably 0.10% by mass or less, more preferably 0.02% by mass or less, and 0.015% by mass or less. Even more preferably. The smaller the sum of the contents, the better. However, by setting the lower limit to about 0.0015% by mass, a copper powder having satisfactory characteristics can be obtained.
- impurities other than the elements described above include potassium and iron.
- the content of the impurity elements described above is the sum of sodium, sulfur and chlorine, and the content of each impurity element is preferably as follows. That is, the sodium content is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the sulfur content is preferably 0% by mass or more and 0.02% by mass or less, and more preferably 0% by mass or more and 0.01% by mass or less.
- the chlorine content is preferably 0% by mass or more and 0.005% by mass or less, and more preferably 0% by mass or more and 0.0005% by mass or less.
- the potassium content is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the iron content is preferably 0% by mass or more and 0.001% by mass or less, and more preferably 0% by mass or more and 0.0001% by mass or less.
- the copper powder of the present invention has a low impurity content and a high copper purity.
- the copper content in the copper powder of the present invention is preferably 98% by mass or more, more preferably 99% by mass or more, and even more preferably 99.8% by mass or more.
- content of each element described so far can be measured by the method as described in the Example mentioned later.
- the copper powder of the present invention has little aggregation of primary particles even though it does not have a layer for suppressing aggregation between particles on the particle surface.
- the degree of primary particle agglomeration can be evaluated using the value of D / D BET , which is the ratio of the average particle size D BET in terms of spheres based on the BET specific surface area and the average particle size D of the primary particles, as a scale.
- the copper powder of the present invention has a D / D BET value of 0.8 or more and 4.0 or less.
- the value of D / D BET is a measure showing how wide the particle size distribution is compared with the ideal monodispersed state in which the copper powder has a uniform particle size and no aggregation, and can be used to estimate the degree of aggregation. .
- the evaluation of the D / D BET value is basically based on the premise that the copper powder has a continuous distribution (one mountain distribution) in addition to being uniform with few pores on the particle surface.
- the copper powder can be interpreted as the ideal monodispersed state described above.
- the larger the value of D / D BET is the wider the particle size distribution of the copper powder is, and the particle size is uneven or there is much aggregation.
- the value of D / D BET is less than 1, which is often observed when the copper powder is in a state deviating from the preconditions mentioned above. Examples of the state deviating from the above preconditions include a state where pores are present on the particle surface, a state where the particle surface is non-uniform, a state where agglomeration exists locally, and the like.
- the value of D / D BET is preferably 0.8 or more and 4.0 or less, more preferably 0.9 or more and 1 .8 or less.
- the value of D BET can be determined by measuring the BET specific surface area of the copper powder by a gas adsorption method. Specifically, the BET specific surface area and the value of D BET can be determined by the method described in the examples described later.
- the D / D BET value in the copper powder of the present invention is as described above, and the D BET value itself is preferably 0.08 ⁇ m to 0.6 ⁇ m, and more preferably 0.1 ⁇ m to 0.4 ⁇ m. It is still more preferably 0.2 ⁇ m or more and 0.4 ⁇ m or less.
- the value of the BET specific surface area in the copper powder of the present invention is preferably 1.7 m 2 / g or more and 8.5 m 2 / g or less, more preferably 2.5 m 2 / g or more and 4 m 2 / g or less. is there.
- the copper powder of the present invention preferably has a crystallite diameter of 60 nm or less, more preferably 50 nm or less, and still more preferably 40 nm or less.
- the lower limit is preferably 20 nm.
- the copper powder of the present invention can be sintered at a low temperature.
- the sintering start temperature is preferably 170 ° C. or higher and 240 ° C. or lower, more preferably 170 ° C. or higher and 235 ° C. or lower, and still more preferably 170 ° C. or higher and 230 ° C. or lower.
- the copper powder of the present invention can be suitably used as a wiring material for a flexible substrate made of polyimide. This is because the glass transition point of polyimide generally used for a flexible substrate exceeds 240 ° C.
- the above-described sintering start temperature can be measured by allowing copper powder to stand in a 3% by volume H 2 —N 2 atmosphere furnace and gradually raising the furnace temperature. Specifically, it can measure by the method as described in the Example mentioned later. Whether or not the sintering has started is determined by observing the copper powder taken out from the furnace with a scanning electron microscope and determining whether or not surface association occurs between the particles. Surface association refers to a state in which particles are integrated so that the surface of one particle and the surface of another particle are continuous. For example, in the observation image of the conductor film shown in FIG.
- This production method is characterized in that, in the reduction of copper ions in a wet manner using hydrazine as a reducing agent, an organic solvent having compatibility with water and capable of reducing the surface tension of water is used as a solvent. I will.
- This manufacturing method can manufacture the copper powder of this invention easily and simply by using this organic solvent.
- water and the organic solvent are used as a liquid medium, and a reaction liquid containing a monovalent or divalent copper source is mixed with hydrazine, and the copper source is reduced to produce copper particles.
- the operation of intentionally forming the protective layer is not performed.
- organic solvent examples include monohydric alcohol, polyhydric alcohol, polyhydric alcohol ester, ketone, ether and the like.
- monohydric alcohol those having 1 to 5 carbon atoms, particularly 1 to 4 carbon atoms are preferable.
- Specific examples include methanol, ethanol, n-propanol, isopropanol, t-butanol and the like.
- polyhydric alcohol examples include diols such as ethylene glycol, 1,2-propylene glycol and 1,3-propylene glycol, and triols such as glycerin.
- polyhydric alcohol esters examples include the fatty acid esters of polyhydric alcohols described above.
- fatty acid for example, a monovalent fatty acid having 1 to 8 carbon atoms, particularly 1 to 5 carbon atoms is preferable.
- the ester of the polyhydric alcohol preferably has at least one hydroxyl group.
- ketone an alkyl group bonded to a carbonyl group having 1 to 6 carbon atoms, particularly 1 to 4 carbon atoms is preferable.
- Specific examples of the ketone include methyl ethyl ketone and acetone.
- ethers include dimethyl ether, ethyl methyl ether, diethyl ether, cyclic compounds such as octacene, tetrahydrofuran, tetrahydropyran, and polyethers such as polyethylene glycol and polypropylene glycol.
- the ratio of the mass of the organic solvent to the mass of water is preferably 1/99 to 90/10, and more preferably 1.5 / 98.5. To 90/10. If the ratio of water and organic solvent is within this range, the surface tension of water during wet reduction can be reduced moderately, and copper powder having D and D / D BET values within the above range can be easily obtained. Can get to.
- the liquid medium is preferably composed only of the organic solvent and water. This is preferable from the viewpoint of producing a copper powder that does not have a protective layer and has few impurities without using a dispersant or the like.
- a reaction solution is prepared by dissolving or dispersing a copper source in the liquid medium.
- the method for preparing the reaction liquid include a method in which a liquid medium and a copper source are mixed and stirred.
- the ratio of the copper source to the liquid medium is preferably 4 g or more and 2000 g or less, more preferably 8 g or more and 1000 g or less, with respect to 1 g of the copper source. It is preferable for the ratio of the copper source to the liquid medium to be within this range since the productivity of copper powder synthesis is high.
- the copper source various monovalent or divalent copper compounds can be used.
- copper acetate, copper hydroxide, copper sulfate, copper oxide, or cuprous oxide it is preferable to use copper acetate, copper hydroxide, copper sulfate, copper oxide, or cuprous oxide.
- copper powder having D and D / D BET values within the above ranges can be easily obtained.
- copper powder with few impurities can be obtained.
- the amount of hydrazine added is preferably 0.5 to 50 mol, more preferably 1 to 20 mol with respect to 1 mol of copper.
- the amount of hydrazine added is within this range, a copper powder having a D / D BET value within the above range can be easily obtained.
- the temperature of the reaction solution is preferably maintained at 40 ° C. or higher and 90 ° C. or lower, particularly 50 ° C. or higher and 80 ° C. or lower from the mixing start point to the end point. For the same reason, it is preferable to continue stirring of the reaction solution from the start of mixing to the end of reaction.
- the reaction solution and hydrazine are preferably mixed as in any of the following (a) and (b). By doing so, it is possible to effectively prevent inconvenience caused by a rapid reaction.
- the reaction solution is preferably aged by continuing stirring even after mixing with hydrazine is completed. This is because it is easy to obtain a copper powder having a D / D BET value within the above range.
- the copper powder of the present invention thus obtained may be dispersed in water or an organic solvent after washing by a decantation method or the like to form a slurry. Moreover, the copper powder of the present invention may be dried to obtain a dry powder. Moreover, the copper powder of this invention is good also as conductive compositions, such as a conductive ink and a conductive paste, adding a solvent, resin, etc. so that it may mention later.
- a copper powder having no protective layer and having a particle size of submicron order is agglomerated when dried, so that it was difficult to take it out as a dry powder.
- water, an organic solvent, a resin, or the like is added to the copper powder to form an aqueous slurry or paste.
- the copper powder of the present invention does not have a protective layer, it is difficult to agglomerate even if it is dried, so that it can be stored and transported as a dry powder. This is advantageous in that the storage space for the copper powder can be reduced and it can be easily transported.
- the conductive composition containing the copper powder of the present invention comprises at least the copper powder and an organic solvent.
- an organic solvent the thing similar to what was used until now in the technical field of the electroconductive composition containing a metal powder can be especially used without a restriction
- organic solvents include monoalcohols, polyhydric alcohols, polyhydric alcohol alkyl ethers, polyhydric alcohol aryl ethers, esters, nitrogen-containing heterocyclic compounds, amides, amines, and saturated hydrocarbons. . These organic solvents can be used alone or in combination of two or more.
- Examples of the monoalcohol include 1-propanol, 1-butanol, 1-pentanol, 1-hexanol, cyclohexanol, 1-heptanol, 1-octanol, 1-nonanol, 1-decanol, glycidol, benzyl alcohol, and methylcyclohexanol.
- 2-methyl 1-butanol, 3-methyl-2-butanol, 4-methyl-2-pentanol, isopropyl alcohol, 2-ethylbutanol, 2-ethylhexanol, 2-octanol, 2-methoxyethanol, 2-ethoxy Ethanol, 2-n-butoxyethanol, 2-phenoxyethanol and the like can be used.
- polyhydric alcohol ethylene glycol, propylene glycol, 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tetraethylene glycol, etc. should be used. Can do.
- polyhydric alcohol alkyl ether examples include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, Propylene glycol monobutyl ether or the like can be used.
- polyhydric alcohol aryl ether ethylene glycol monophenyl ether or the like can be used.
- esters ethyl cellosolve acetate, butyl cellosolve acetate, ⁇ -butyrolactone and the like can be used.
- nitrogen-containing heterocyclic compound N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone and the like can be used.
- amides formamide, N-methylformamide, N, N-dimethylformamide and the like can be used.
- amines monoethanolamine, diethanolamine, triethanolamine, tripropylamine, tributylamine and the like can be used.
- saturated hydrocarbon for example, heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, etc. can be used.
- a dispersant may be added to the conductive composition of the present invention as necessary.
- nonionic surfactants that do not contain sodium, calcium, phosphorus, sulfur, chlorine and the like are suitable.
- the nonionic surfactant include polyhydric alcohol fatty acid esters, propylene glycol fatty acid esters, Glycerin fatty acid ester, polyglycerin fatty acid ester, polyoxyethylene glycerin fatty acid ester, polyoxyethylene alkyl ether, polyoxyethylene polyoxypropylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, polyoxy Ethylene sorbite fatty acid ester, polyoxyethylene hydrogenated castor oil, polyoxyethylene alkylamine, polyoxyalkylene alkylamine, alkyl amine Kanoruamido, polyoxyethylene alkyl phenyl ether or the like can be used.
- the conductive composition of the present invention may further contain an organic vehicle or glass frit.
- the organic vehicle includes a resin component and a solvent.
- the resin component include acrylic resin, epoxy resin, ethyl cellulose, carboxyethyl cellulose, and the like.
- the solvent include terpene solvents such as terpineol and dihydroterpineol, and ether solvents such as ethyl carbitol and butyl carbitol.
- the glass frit include borosilicate glass, borosilicate barium glass, and borosilicate zinc glass.
- copper powder of the present invention may be appropriately blended with the conductive composition of the present invention as needed for the purpose of further improving various performances of the conductive composition. Good.
- the blending amount of the copper powder and the organic solvent in the conductive composition of the present invention can be adjusted in a wide range depending on the specific use of the conductive composition and the coating method of the conductive composition.
- the coating method for example, an inkjet method, a dispenser method, a micro dispenser method, a gravure printing method, a screen printing method, a dip coating method, a spin coating method, a spray coating method, a bar coating method, a roll coating method, or the like can be used.
- the conductive composition of the present invention has different viscosities depending on the content ratio of copper powder, and is named by various names such as ink, slurry, paste, etc. depending on the difference in viscosity.
- the content rate of the copper powder in the electrically conductive composition of this invention can be set in the wide range of 5 mass% or more and 95 mass% or less, for example. In this range, when using an inkjet printing method as a coating method, it is preferable to set the content rate of copper powder to 10 mass% or more and 50 mass% or less, for example. When the screen printing method is used, it is preferably set to, for example, 60% by mass to 95% by mass.
- the content ratio of the copper powder is high, for example, around 90% by mass, it is preferable to use a dispenser method as a coating method.
- the conductive composition of the present invention can be coated on a substrate to form a coating film, and a conductive film can be formed by firing the coating film.
- the conductor film is suitably used for forming a circuit of a printed wiring board and ensuring electrical continuity of an external electrode of a ceramic capacitor, for example.
- substrate the flexible printed circuit board which consists of a printed board which consists of glass epoxy resins etc., a polyimide, etc. is mentioned according to the kind of electronic circuit in which copper powder is used.
- the baking temperature of the formed coating film should just be more than the baking start temperature of the copper powder mentioned above.
- the firing temperature of the coating film can be set to 170 to 240 ° C., for example.
- the firing atmosphere can be performed, for example, in a non-oxidizing atmosphere.
- the non-oxidizing atmosphere include a reducing atmosphere such as hydrogen and carbon monoxide, a weak reducing atmosphere such as a hydrogen-nitrogen mixed atmosphere, and an inert atmosphere such as argon, neon, helium and nitrogen.
- a reducing atmosphere, a weak reducing atmosphere, and an inert atmosphere it is preferable that the respective atmospheres are formed after the inside of the heating furnace is once vacuumed to remove oxygen before heating.
- the hydrogen concentration is preferably set to a concentration lower than the explosion limit concentration. Specifically, the hydrogen concentration is preferably about 1% by volume to 4% by volume. Whichever atmosphere is used, the firing time is preferably 10 minutes to 3 hours, particularly preferably 30 minutes to 2 hours.
- the conductive film thus obtained has high conductivity due to the copper powder of the present invention blended as a constituent of the conductive composition. Moreover, adhesiveness with the application target object of an electroconductive composition will become high.
- the present inventor believes that the reason for this is that the copper powder of the present invention has good low-temperature sinterability. Specifically, it is considered that the copper powder of the present invention having good low-temperature sinterability is easily melted in the firing process of the coating film containing the copper powder and the particles are face-to-face associated with each other. On the other hand, if the low-temperature sinterability is not good, the particles are only in point contact with each other even if the coating film is baked, so that it is not easy to increase the conductivity.
- the contact area between the melted particles and the surface of the base material is increased by melting of the particles in the firing step, and an anchor effect is generated between the melted particles and the surface of the base material, resulting in adhesion. It is thought to be higher.
- Example 1 A 500 ml round bottom flask equipped with a stirring blade was prepared. This round bottom flask was charged with 15.71 g of copper acetate monohydrate as a copper source. Further, 10 g of water and 70.65 g of isopropanol as an organic solvent were added to the round bottom flask to obtain a reaction solution. While stirring this reaction liquid at 150 rpm, the liquid temperature was raised to 60 ° C. While continuing stirring, 1.97 g of hydrazine monohydrate was added to the reaction solution all at once. The reaction was then stirred for 30 minutes. Thereafter, 17.73 g of hydrazine monohydrate was added to the reaction solution. The reaction was further stirred for 30 minutes.
- Example 2 to 13 The target copper powder was obtained in the same manner as in Example 1 except that the type of organic solvent, the amount of water and organic solvent used, or the type of copper source was changed as shown in Table 1 below.
- Comparative Examples 1 and 2 As the copper powder of Comparative Example 1, “CT500” manufactured by Mitsui Metal Mining Co., Ltd., which is a copper powder having a protective layer formed on the surface thereof, was used. As the copper powder of Comparative Example 2, “1050Y” manufactured by Mitsui Metal Mining Co., Ltd., which is a copper powder having a protective layer formed on the surface thereof, was used.
- the average particle diameter D ( ⁇ m) of primary particles, the BET specific surface area (m 2 / g), and the BET ratio were as follows.
- the average particle diameter D BET ( ⁇ m) in terms of true sphere based on the surface area was determined.
- D / D BET was calculated from the obtained D and D BET values.
- the content (mass%) of carbon, phosphorus, silicon, titanium, and zirconium was measured by the following method, and the sum total of these five elements was calculated
- Average particle diameter D of primary particles Using a scanning electron microscope (XL30SFEG manufactured by Japan FI Eye Co., Ltd.), the copper powder was observed at a magnification of 10,000 or 30,000, and the horizontal ferret diameter was measured for 200 particles in the field of view. . From the measured value, the volume average particle diameter converted to a sphere was calculated and used as the average particle diameter D ( ⁇ m) of the primary particles.
- the content (mass%) of carbon and sulfur was measured using a gas analyzer (EMIA-920V manufactured by Horiba, Ltd.).
- the contents (mass%) of phosphorus, silicon, titanium, zirconium, sodium, potassium, and iron were measured by ICP emission analysis (ICP-SPS-3000 manufactured by SII Nanotechnology Co., Ltd.).
- the chlorine content (% by mass) was measured by ion chromatography (AQF-2100F manufactured by Mitsubishi Chemical Analytech Co., Ltd.).
- the copper content (% by mass) was expressed as a value obtained by subtracting the measured impurity amount from 100%.
- Crystallite diameter X-ray diffraction measurement of copper powder was performed using RINT-TTRIII manufactured by Rigaku Corporation. Using the obtained (111) peak, the crystallite diameter (nm) was calculated by the Scherrer method.
- the copper powder of each example has a lower sintering start temperature and good low-temperature sinterability than the copper powder of each comparative example.
- the copper powder of the present invention is sintered at a temperature of 230 ° C. or lower, and a conductor film having a low specific resistance is obtained. I understand that.
- Example 14 Preparation of conductive composition and production of conductive film
- a slurry (conductive composition) of copper powder having a concentration of 40% by mass was obtained as follows. 4 g of copper powder and 6 g of tetraethylene glycol were mixed using a three-roll mill to form a slurry. The obtained slurry was applied onto a glass substrate using an applicator to form a coating film. This coating film was heat-treated in an atmosphere of 3% by volume H 2 —N 2 at 230 ° C. for 2 hours to obtain a conductor film having a thickness of 12 ⁇ m.
- Example 1 The copper powder obtained in Example 1 and the conductor film obtained in this example were observed at a magnification of 50000 times using the scanning electron microscope. An observation image of the copper powder is shown in FIG. 1 (a), and an observation image of the conductor film is shown in FIG. 1 (b).
- the specific resistance of the obtained conductor film was calculated by converting the film thickness after measuring the surface resistance with a resistivity meter (MCP-T600, manufactured by Mitsubishi Chemical Corporation). It was close to the specific resistance (1.7 ⁇ ⁇ cm).
- Example 15 Preparation of conductive composition and production of conductor film
- a conductive ink (conductive composition) comprising 92% by mass of the copper powder obtained in Example 4, 6% by mass of tetraethylene glycol, and 2% by mass of polyoxyethylene alkyl ether (trion X-100) was prepared. did.
- the obtained electroconductive ink was apply
- Example 3 Preparation of conductive composition and production of conductor film
- CT500 particle diameter 0.67 ⁇ m
- a conductive ink was prepared. Using this conductive ink, a conductor film was obtained in the same manner as in Example 15. When the peeling test similar to Example 15 was done about the obtained conductor film, peeling of the conductor film from the polyimide film was observed. The specific resistance of the conductor film was 45 ⁇ ⁇ cm.
- a copper powder having good low-temperature sinterability and a method for producing the same are provided. Moreover, according to this invention, the copper powder which can form a conductor film with low specific resistance and high adhesiveness with a base material easily, and its manufacturing method are provided.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
(a)前記反応液中に、ヒドラジンを、時間をおいて複数回にわたって添加する。
(b)前記反応液中に、ヒドラジンを、連続して所定時間にわたって添加する。
(a)の場合、複数回とは、2回以上6回以下程度であることが好ましい。ヒドラジンの各添加の間隔は5分以上90分以下程度であることが好ましい。
(b)の場合、前記の所定時間とは1分以上180分以下程度であることが好ましい。反応液は、ヒドラジンとの混合が終了した後も、撹拌を継続して、熟成することが好ましい。こうすることで、D/DBETの値が前記の範囲内となる銅粉が得やすいからである。
撹拌羽を取り付けた容量500mlの丸底フラスコを用意した。この丸底フラスコに、銅源として酢酸銅一水和物15.71gを投入した。丸底フラスコに、更に水10gと、有機溶媒としてイソプロパノール70.65gとを加えて反応液を得た。この反応液を、150rpmで撹拌しながら液温を60℃まで上げた。撹拌を続けたまま、反応液にヒドラジン一水和物1.97gを一度に添加した。次いで、反応液を30分間撹拌した。その後、反応液にヒドラジン一水和物17.73gを添加した。更に反応液を30分間撹拌した。その後、反応液にヒドラジン一水和物7.88gを添加した。その後、反応液を、液温を60℃に保ったまま、1時間撹拌し続けた。反応終了後、反応液全量を固液分離した。得られた固形分について、純水を用いたデカンテーション法による洗浄を行った。洗浄は、上澄み液の導電率が1000μS/cm以下になるまで繰り返した。洗浄物を固液分離した。得られた固形分にエタノール160gを加え、加圧濾過器を用いて濾過した。得られた固形分を常温で減圧乾燥し、目的とする銅粉を得た。
有機溶媒の種類、水及び有機溶媒の使用量、又は銅源の種類を下記の表1記載のとおりに変更した以外は、実施例1と同様にして、目的とする銅粉を得た。
比較例1の銅粉として、表面に保護層が形成された銅粉である三井金属鉱業株式会社製「CT500」を使用した。比較例2の銅粉として、表面に保護層が形成された銅粉である三井金属鉱業株会社製「1050Y」を使用した。
実施例1ないし13で得られた銅粉並びに比較例1及び2の銅粉について、以下の方法で、一次粒子の平均粒径D(μm)、BET比表面積(m2/g)、BET比表面積に基づく真球換算での平均粒径DBET(μm)を求めた。更に、得られたD及びDBETの値からD/DBETを算出した。また、以下の方法で、炭素、リン、ケイ素、チタン、ジルコニウムの含有量(質量%)を測定し、これら5つの元素の総和を求めた。更に、ナトリウム、硫黄、塩素の含有量(質量%)を測定し、これら3つの元素の総和を求めた。カリウム、鉄、窒素、銅の含有量(質量%)も測定した。また、以下の方法で、結晶子径(nm)を求めた。また、以下の方法で、焼結開始温度(℃)を求めた。これらの結果を表1に示す。ただし、銅以外の個別の元素の含有量は、表2に示す。
走査型電子顕微鏡(日本エフイー・アイ(株)製XL30SFEG)を用い、倍率10,000倍又は30,000倍で、銅粉を観察し、視野中の粒子200個について水平方向フェレ径を測定した。測定した値から、球に換算した体積平均粒径を算出し、一次粒子の平均粒径D(μm)とした。
(株)島津製作所製フローソーブII2300を用い、1点法で測定した。測定粉末の量を1.0gとし、予備脱気条件は150℃で15分間とした。
前記で得られたBET比表面積(SSA)の値及び銅の室温近傍の密度(8.94g/cm3)から下記式によって求めた。
DBET(μm)=6/(SSA(m2/g)×8.94(g/cm3))
炭素及び硫黄の含有量(質量%)は、ガス分析装置((株)堀場製作所製EMIA-920V)を用いて測定した。リン、ケイ素、チタン、ジルコニウム、ナトリウム、カリウム及び鉄の含有量(質量%)は、ICP発光分析(エスアイアイ・ナノテクノロジー(株)製ICP-SPS-3000)で測定した。塩素の含有量(質量%)は、イオンクロマトグラフィー((株)三菱化学アナリテック製AQF-2100F)で測定した。銅の含有量(質量%)は100%から測定した不純物量を差し引いた値で表した。
(株)リガク製のRINT-TTRIIIを用いて銅粉のX線回折測定を行った。得られた(111)ピークを用いて、シェラー(Scherrer)法によって結晶子径(nm)を算出した。
銅粉をアルミニウム製の台に乗せて、3体積%H2-N2雰囲気下、160℃の設定温度で1時間保持した。その後、炉から銅粉を取り出し、前記の走査型電子顕微鏡を用いて倍率50,000倍で銅粉を観察し、面会合の有無を調べた。面会合が観察されない場合、炉の設定温度を、前記の設定温度から10℃高い温度に設定し直し、新たな設定温度において面会合の有無を前記と同様にして調べた。この操作を繰り返し、面会合が観察された炉の設定温度を、焼結開始温度(℃)とした。
実施例1で得られた銅粉を用いて、以下のようにして、濃度40質量%の銅粉のスラリー(導電性組成物)を得た。
銅粉4gとテトラエチレングリコール6gを、3本ロールミルを用いて混合しスラリーとした。得られたスラリーを、ガラス基板上にアプリケータを用いて塗布して塗膜を形成した。この塗膜を、230℃の3体積%H2-N2雰囲気下で2時間にわたって熱処理して、厚さ12μmの導体膜を得た。
実施例4で得られた銅粉92質量%と、テトラエチレングリコール6質量%と、ポリオキシエチレンアルキルエーテル(trion X-100)2質量%とからなる導電性インク(導電性組成物)を調製した。得られた導電性インクを、ポリイミドフィルム(宇部興産株式会社製ユーピレックス25S)上にスクリーン印刷法を用いて塗布して塗膜を形成した。この塗膜を、230℃の3体積%H2-N2雰囲気下で2時間にわたって熱処理して、厚さ34μmの導体膜を得た。得られた導体膜にセロハンテープを貼り付けて剥離テストを行い、剥離の有無を調べたところ、剥離は観察されなかった。また、この導体膜の比抵抗を実施例14と同様の方法で測定したところ、9μΩ・cmであった。
実施例15において用いた実施例4の銅粉に代えて、三井金属鉱業(株)製の銅粉である「CT500」(粒径0.67μm)を用いた以外は、実施例15と同様にして導電性インクを調製した。この導電性インクを用い、実施例15と同様にして導体膜を得た。得られた導体膜について実施例15と同様の剥離テストを行ったところ、ポリイミドフィルムからの導体膜の剥離が観察された。また導体膜の比抵抗は45μΩ・cmであった。
Claims (12)
- 一次粒子の平均粒径Dが0.15以上0.6μm以下であり、一次粒子の平均粒径DとBET比表面積に基づく真球換算での平均粒径DBETとの比であるD/DBETの値が0.8以上4.0以下であり、かつ粒子間での凝集を抑制するための層を粒子表面に有していないことを特徴とする銅粉。
- 炭素、リン、ケイ素、チタン及びジルコニウムの含有量の総和が、0.10質量%以下である請求項1に記載の銅粉。
- ナトリウム、硫黄及び塩素の含有量の総和が、0.10質量%以下である請求項1又は2に記載の銅粉。
- 結晶子径が60nm以下である請求項1ないし3のいずれか一項に記載の銅粉。
- 焼結開始温度が170℃以上240℃以下である請求項1ないし4のいずれか一項に記載の銅粉。
- 請求項1ないし5のいずれか一項に記載の銅粉と有機溶媒とを含む導電性組成物。
- 水、及び水と相溶性を有し、かつ水の表面張力を低下させ得る有機溶媒を液媒体とし、かつ一価又は二価の銅源を含む反応液と、ヒドラジンとを混合し、該銅源を還元して銅粒子を生成させることを特徴とする銅粉の製造方法。
- 水の質量に対する前記有機溶媒の質量の比率(有機溶媒/水)が1/99から90/10である請求項7に記載の製造方法。
- 前記銅源として酢酸銅、水酸化銅、硫酸銅、酸化銅又は亜酸化銅を用いる請求項7又は8に記載の製造方法。
- 液媒体が前記有機溶媒及び水のみからなる請求項7ないし9のいずれか一項に記載の製造方法。
- 還元剤としてヒドラジンのみを用いる請求項7ないし10のいずれか一項に記載の製造方法。
- 請求項1ないし5のいずれか一項に記載の銅粉を焼成して得られた導体膜。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13856128.7A EP2923781A4 (en) | 2012-11-26 | 2013-06-20 | COPPER POWDER AND PROCESS FOR PRODUCING THE SAME |
CN201380051535.5A CN104684666B (zh) | 2012-11-26 | 2013-06-20 | 铜粉及其制造方法 |
KR1020157008392A KR102118308B1 (ko) | 2012-11-26 | 2013-06-20 | 구리분 및 그 제조방법 |
US14/432,646 US10518323B2 (en) | 2012-11-26 | 2013-06-20 | Copper power and method for producing same |
JP2014548473A JP5872063B2 (ja) | 2012-11-26 | 2013-06-20 | 銅粉 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012257281 | 2012-11-26 | ||
JP2012-257281 | 2012-11-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014080662A1 true WO2014080662A1 (ja) | 2014-05-30 |
Family
ID=50775854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/066934 WO2014080662A1 (ja) | 2012-11-26 | 2013-06-20 | 銅粉及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10518323B2 (ja) |
EP (1) | EP2923781A4 (ja) |
JP (1) | JP5872063B2 (ja) |
KR (1) | KR102118308B1 (ja) |
CN (1) | CN104684666B (ja) |
TW (1) | TWI630045B (ja) |
WO (1) | WO2014080662A1 (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015168878A (ja) * | 2014-03-10 | 2015-09-28 | 三井金属鉱業株式会社 | 銅粉 |
WO2016121749A1 (ja) * | 2015-01-30 | 2016-08-04 | 住友電気工業株式会社 | 金属粉末、インク、焼結体及びプリント配線板用基材並びに金属粉末の製造方法 |
JP2016153530A (ja) * | 2014-09-01 | 2016-08-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP6060225B1 (ja) * | 2015-07-27 | 2017-01-11 | 三井金属鉱業株式会社 | 銅粉及びその製造方法 |
KR20170047360A (ko) * | 2014-09-01 | 2017-05-04 | 도와 일렉트로닉스 가부시키가이샤 | 접합재 및 그것을 사용한 접합 방법 |
JP2017157329A (ja) * | 2016-02-29 | 2017-09-07 | 三井金属鉱業株式会社 | 銅ペースト及び銅の焼結体の製造方法 |
JP2017179555A (ja) * | 2016-03-31 | 2017-10-05 | 三井金属鉱業株式会社 | 銀コート銅粉 |
EP3275572A4 (en) * | 2015-03-26 | 2018-11-14 | Mitsui Mining and Smelting Co., Ltd. | Copper powder and conductive composition containing same |
JP2019002054A (ja) * | 2017-06-16 | 2019-01-10 | 三井金属鉱業株式会社 | 銅粒子 |
JP2020002444A (ja) * | 2018-06-29 | 2020-01-09 | 日揮触媒化成株式会社 | 金属粒子分散液の製造方法、金属粒子分散液、及び被膜付基材の製造方法 |
WO2020032161A1 (ja) * | 2018-08-08 | 2020-02-13 | 三井金属鉱業株式会社 | 接合用組成物、並びに導電体の接合構造及びその製造方法 |
JP2020053404A (ja) * | 2019-12-11 | 2020-04-02 | 三井金属鉱業株式会社 | 銅ペースト及び銅の焼結体の製造方法 |
WO2021100595A1 (ja) * | 2019-11-22 | 2021-05-27 | 東邦チタニウム株式会社 | 銅粉体とその製造方法 |
WO2022168610A1 (ja) | 2021-02-05 | 2022-08-11 | 株式会社マテリアル・コンセプト | 銅ペースト |
JP7355182B2 (ja) | 2020-10-28 | 2023-10-03 | 株式会社村田製作所 | チップ型セラミック電子部品の製造方法 |
WO2024009522A1 (ja) * | 2022-07-08 | 2024-01-11 | Jx金属株式会社 | 銅粉 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3104400B1 (en) * | 2014-02-04 | 2022-08-31 | Murata Manufacturing Co., Ltd. | Manufacturing method of electronic component module |
US10625344B2 (en) * | 2015-03-05 | 2020-04-21 | Osaka University | Method for producing copper particles, copper particles, and copper paste |
JP5907302B1 (ja) * | 2015-05-15 | 2016-04-26 | 住友金属鉱山株式会社 | 銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銅粉の製造方法 |
JP5907301B1 (ja) | 2015-05-15 | 2016-04-26 | 住友金属鉱山株式会社 | 銀コート銅粉及びそれを用いた銅ペースト、導電性塗料、導電性シート、並びに銀コート銅粉の製造方法 |
JP6967839B2 (ja) | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | 加熱接合用シート、ダイシングテープ付き加熱接合用シート、及び、接合体の製造方法、パワー半導体装置 |
KR102282809B1 (ko) * | 2016-08-03 | 2021-07-27 | 가부시키가이샤 아데카 | 구리 분말의 제조 방법 |
JP7039126B2 (ja) * | 2016-12-28 | 2022-03-22 | Dowaエレクトロニクス株式会社 | 銅粉およびその製造方法 |
JP6986390B2 (ja) * | 2017-08-31 | 2021-12-22 | Koa株式会社 | 厚膜抵抗器 |
JP6561100B2 (ja) * | 2017-10-04 | 2019-08-14 | Jx金属株式会社 | 表面処理銅微粒子の製造方法 |
WO2020002890A1 (en) * | 2018-06-26 | 2020-01-02 | Alpha Assembly Solutions Inc. | Nano copper paste and film for sintered die attach and similar applications |
RU2691474C1 (ru) * | 2018-08-15 | 2019-06-14 | Марина Владимировна Пузанова | Медный порошок для очистки технического тетрахлорида титана от примеси окситрихлорида ванадия |
JP6549298B1 (ja) * | 2018-09-21 | 2019-07-24 | Jx金属株式会社 | 易解砕性銅粉及びその製造方法 |
JP7139258B2 (ja) * | 2019-01-22 | 2022-09-20 | 大陽日酸株式会社 | 銅微粒子、導電性材料、銅微粒子の製造方法 |
KR102274721B1 (ko) | 2019-07-16 | 2021-07-09 | 전북대학교산학협력단 | 난소암 진단을 위한 돌연변이 유전자 및 이를 이용한 진단 방법 |
CN115297978A (zh) * | 2020-03-27 | 2022-11-04 | 三井金属矿业株式会社 | 接合用组合物的制造方法 |
JP7122436B1 (ja) * | 2021-06-08 | 2022-08-19 | Jx金属株式会社 | 銅粉 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6299406A (ja) | 1985-10-28 | 1987-05-08 | Mitsui Mining & Smelting Co Ltd | 銅粉末の製造法 |
JPH04116109A (ja) | 1990-09-06 | 1992-04-16 | Sumitomo Metal Ind Ltd | 銅微粉末の製造方法 |
JPH10317022A (ja) | 1997-05-22 | 1998-12-02 | Daiken Kagaku Kogyo Kk | 金属微粒子粉末の製造方法 |
JP2004225087A (ja) | 2003-01-21 | 2004-08-12 | Rasa Ind Ltd | 銅粉末の製造方法 |
JP2004256857A (ja) * | 2003-02-25 | 2004-09-16 | Ishihara Sangyo Kaisha Ltd | 銅微粒子及びその製造方法 |
JP2005023417A (ja) * | 2003-07-04 | 2005-01-27 | Fukuda Metal Foil & Powder Co Ltd | 銅超微粉末の製造方法 |
JP2007254846A (ja) | 2006-03-24 | 2007-10-04 | Mitsui Mining & Smelting Co Ltd | 銅粉の製造方法及びその製造方法で得られた銅粉 |
JP2009052146A (ja) * | 2008-11-26 | 2009-03-12 | Dowa Holdings Co Ltd | 銅粉およびその製造法 |
JP2009062598A (ja) | 2007-09-07 | 2009-03-26 | Mitsui Mining & Smelting Co Ltd | 銅ナノ粒子の製造方法 |
JP2010018880A (ja) * | 2008-04-01 | 2010-01-28 | Dowa Electronics Materials Co Ltd | 導電性ペースト用銅粉およびその製造方法 |
JP2010144197A (ja) * | 2008-12-16 | 2010-07-01 | Mitsui Mining & Smelting Co Ltd | 金属粉及び金属粉の製造方法 |
JP2012162807A (ja) * | 2004-08-20 | 2012-08-30 | Ishihara Sangyo Kaisha Ltd | 銅微粒子及びその製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69819740T2 (de) * | 1997-02-24 | 2004-09-30 | Superior Micropowders Llc, Albuquerque | Aerosolverfahren und -gerät, teilchenförmige produkte, und daraus hergestellte elektronische geräte |
US20050097987A1 (en) | 1998-02-24 | 2005-05-12 | Cabot Corporation | Coated copper-containing powders, methods and apparatus for producing such powders, and copper-containing devices fabricated from same |
JP2002015622A (ja) | 2000-06-30 | 2002-01-18 | Fukuda Metal Foil & Powder Co Ltd | 導電ペースト用銅粉末及びその製造方法 |
US7767721B2 (en) | 2002-12-03 | 2010-08-03 | Asahi Kasei Kabushiki Kaisha | Copper oxide ultrafine particles |
JP4868716B2 (ja) * | 2004-04-28 | 2012-02-01 | 三井金属鉱業株式会社 | フレーク銅粉及び導電性ペースト |
JP4662760B2 (ja) | 2004-12-22 | 2011-03-30 | 三井金属鉱業株式会社 | 超微粒銅粉、超微粒銅粉スラリー及び超微粒銅粉スラリーの製造方法 |
JP4821396B2 (ja) * | 2006-03-27 | 2011-11-24 | 住友金属鉱山株式会社 | 導電性組成物及び導電膜形成方法 |
CN100581694C (zh) * | 2007-03-26 | 2010-01-20 | 中南大学 | 一种单分散高结晶度铜粉的制备方法 |
JP5235193B2 (ja) * | 2007-06-28 | 2013-07-10 | Jx日鉱日石金属株式会社 | 球状銅微粉及びその製造方法 |
JP5392884B2 (ja) * | 2007-09-21 | 2014-01-22 | 三井金属鉱業株式会社 | 銅粉の製造方法 |
JP5127605B2 (ja) * | 2008-07-07 | 2013-01-23 | 富士フイルム株式会社 | 光断層画像化装置 |
US8216340B2 (en) * | 2009-03-03 | 2012-07-10 | E. I. Du Pont De Nemours And Company | Method for producing dispersed, crystalline, stable to oxidation copper particles |
CN102549086A (zh) * | 2009-09-16 | 2012-07-04 | 日立化成工业株式会社 | 印刷法用油墨以及用于该油墨的金属纳米粒子、以及布线、电路基板、半导体封装 |
KR101134501B1 (ko) * | 2009-12-07 | 2012-04-13 | 주식회사 풍산 | 열플라즈마를 이용한 고순도 구리분말의 제조방법 |
JP5255580B2 (ja) * | 2010-02-10 | 2013-08-07 | 三井金属鉱業株式会社 | フレーク銅粉の製造方法 |
JP5520861B2 (ja) | 2010-03-26 | 2014-06-11 | 古河電気工業株式会社 | 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材 |
JP2014034697A (ja) * | 2012-08-08 | 2014-02-24 | Furukawa Co Ltd | 銅微粒子の製造方法、導電性ペーストおよび導電性ペーストの製造方法 |
-
2013
- 2013-06-20 WO PCT/JP2013/066934 patent/WO2014080662A1/ja active Application Filing
- 2013-06-20 JP JP2014548473A patent/JP5872063B2/ja active Active
- 2013-06-20 US US14/432,646 patent/US10518323B2/en active Active
- 2013-06-20 EP EP13856128.7A patent/EP2923781A4/en not_active Withdrawn
- 2013-06-20 KR KR1020157008392A patent/KR102118308B1/ko active IP Right Grant
- 2013-06-20 CN CN201380051535.5A patent/CN104684666B/zh active Active
- 2013-07-03 TW TW102123865A patent/TWI630045B/zh active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6299406A (ja) | 1985-10-28 | 1987-05-08 | Mitsui Mining & Smelting Co Ltd | 銅粉末の製造法 |
JPH04116109A (ja) | 1990-09-06 | 1992-04-16 | Sumitomo Metal Ind Ltd | 銅微粉末の製造方法 |
JPH10317022A (ja) | 1997-05-22 | 1998-12-02 | Daiken Kagaku Kogyo Kk | 金属微粒子粉末の製造方法 |
JP2004225087A (ja) | 2003-01-21 | 2004-08-12 | Rasa Ind Ltd | 銅粉末の製造方法 |
JP2004256857A (ja) * | 2003-02-25 | 2004-09-16 | Ishihara Sangyo Kaisha Ltd | 銅微粒子及びその製造方法 |
JP2005023417A (ja) * | 2003-07-04 | 2005-01-27 | Fukuda Metal Foil & Powder Co Ltd | 銅超微粉末の製造方法 |
JP2012162807A (ja) * | 2004-08-20 | 2012-08-30 | Ishihara Sangyo Kaisha Ltd | 銅微粒子及びその製造方法 |
JP2007254846A (ja) | 2006-03-24 | 2007-10-04 | Mitsui Mining & Smelting Co Ltd | 銅粉の製造方法及びその製造方法で得られた銅粉 |
JP2009062598A (ja) | 2007-09-07 | 2009-03-26 | Mitsui Mining & Smelting Co Ltd | 銅ナノ粒子の製造方法 |
JP2010018880A (ja) * | 2008-04-01 | 2010-01-28 | Dowa Electronics Materials Co Ltd | 導電性ペースト用銅粉およびその製造方法 |
JP2009052146A (ja) * | 2008-11-26 | 2009-03-12 | Dowa Holdings Co Ltd | 銅粉およびその製造法 |
JP2010144197A (ja) * | 2008-12-16 | 2010-07-01 | Mitsui Mining & Smelting Co Ltd | 金属粉及び金属粉の製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2923781A4 |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015168878A (ja) * | 2014-03-10 | 2015-09-28 | 三井金属鉱業株式会社 | 銅粉 |
CN107249787A (zh) * | 2014-09-01 | 2017-10-13 | 同和电子科技有限公司 | 粘合材料和使用所述粘合材料的粘合方法 |
KR102359193B1 (ko) * | 2014-09-01 | 2022-02-04 | 도와 일렉트로닉스 가부시키가이샤 | 접합재 및 그것을 사용한 접합 방법 |
EP3189914A4 (en) * | 2014-09-01 | 2018-06-06 | DOWA Electronics Materials Co., Ltd. | Bonding material and bonding method using same |
KR20170047360A (ko) * | 2014-09-01 | 2017-05-04 | 도와 일렉트로닉스 가부시키가이샤 | 접합재 및 그것을 사용한 접합 방법 |
CN107249787B (zh) * | 2014-09-01 | 2020-12-01 | 同和电子科技有限公司 | 粘合材料和使用所述粘合材料的粘合方法 |
US20170252874A1 (en) * | 2014-09-01 | 2017-09-07 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method using same |
US10821558B2 (en) | 2014-09-01 | 2020-11-03 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method using same |
JP2016153530A (ja) * | 2014-09-01 | 2016-08-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
WO2016121749A1 (ja) * | 2015-01-30 | 2016-08-04 | 住友電気工業株式会社 | 金属粉末、インク、焼結体及びプリント配線板用基材並びに金属粉末の製造方法 |
US10994331B2 (en) | 2015-03-26 | 2021-05-04 | Mitsui Mining & Smelting Co., Ltd. | Copper powder and conductive composition containing same |
EP3275572A4 (en) * | 2015-03-26 | 2018-11-14 | Mitsui Mining and Smelting Co., Ltd. | Copper powder and conductive composition containing same |
JP6060225B1 (ja) * | 2015-07-27 | 2017-01-11 | 三井金属鉱業株式会社 | 銅粉及びその製造方法 |
JP2017157329A (ja) * | 2016-02-29 | 2017-09-07 | 三井金属鉱業株式会社 | 銅ペースト及び銅の焼結体の製造方法 |
JP2017179555A (ja) * | 2016-03-31 | 2017-10-05 | 三井金属鉱業株式会社 | 銀コート銅粉 |
JP2019002054A (ja) * | 2017-06-16 | 2019-01-10 | 三井金属鉱業株式会社 | 銅粒子 |
JP2020002444A (ja) * | 2018-06-29 | 2020-01-09 | 日揮触媒化成株式会社 | 金属粒子分散液の製造方法、金属粒子分散液、及び被膜付基材の製造方法 |
JP7083710B2 (ja) | 2018-06-29 | 2022-06-13 | 日揮触媒化成株式会社 | 金属粒子分散液の製造方法、金属粒子分散液、及び被膜付基材の製造方法 |
JP2021143426A (ja) * | 2018-08-08 | 2021-09-24 | 三井金属鉱業株式会社 | 接合用組成物、並びに導電体の接合構造及びその製造方法 |
JPWO2020032161A1 (ja) * | 2018-08-08 | 2021-03-11 | 三井金属鉱業株式会社 | 接合用組成物、並びに導電体の接合構造及びその製造方法 |
WO2020032161A1 (ja) * | 2018-08-08 | 2020-02-13 | 三井金属鉱業株式会社 | 接合用組成物、並びに導電体の接合構造及びその製造方法 |
JP7190529B2 (ja) | 2018-08-08 | 2022-12-15 | 三井金属鉱業株式会社 | 接合用組成物、並びに導電体の接合構造及びその製造方法 |
US11931808B2 (en) | 2018-08-08 | 2024-03-19 | Mitsui Mining & Smelting Co., Ltd. | Bonding composition, conductor bonding structure, and method for producing same |
WO2021100595A1 (ja) * | 2019-11-22 | 2021-05-27 | 東邦チタニウム株式会社 | 銅粉体とその製造方法 |
JP2021080549A (ja) * | 2019-11-22 | 2021-05-27 | 東邦チタニウム株式会社 | 銅粉体とその製造方法 |
TWI763135B (zh) * | 2019-11-22 | 2022-05-01 | 日商東邦鈦股份有限公司 | 銅粉體 |
JP2020053404A (ja) * | 2019-12-11 | 2020-04-02 | 三井金属鉱業株式会社 | 銅ペースト及び銅の焼結体の製造方法 |
JP7355182B2 (ja) | 2020-10-28 | 2023-10-03 | 株式会社村田製作所 | チップ型セラミック電子部品の製造方法 |
WO2022168610A1 (ja) | 2021-02-05 | 2022-08-11 | 株式会社マテリアル・コンセプト | 銅ペースト |
WO2024009522A1 (ja) * | 2022-07-08 | 2024-01-11 | Jx金属株式会社 | 銅粉 |
Also Published As
Publication number | Publication date |
---|---|
TW201420235A (zh) | 2014-06-01 |
EP2923781A1 (en) | 2015-09-30 |
US10518323B2 (en) | 2019-12-31 |
KR20150088994A (ko) | 2015-08-04 |
CN104684666B (zh) | 2017-07-04 |
EP2923781A4 (en) | 2016-07-13 |
KR102118308B1 (ko) | 2020-06-03 |
TWI630045B (zh) | 2018-07-21 |
JP5872063B2 (ja) | 2016-03-01 |
CN104684666A (zh) | 2015-06-03 |
JPWO2014080662A1 (ja) | 2017-01-05 |
US20150266090A1 (en) | 2015-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5872063B2 (ja) | 銅粉 | |
JP5941082B2 (ja) | 銅粉 | |
JP5937730B2 (ja) | 銅粉の製造方法 | |
JP4868716B2 (ja) | フレーク銅粉及び導電性ペースト | |
TWI634818B (zh) | Conductor connection structure, conductive composition and electronic component module | |
CN109789482B (zh) | 接合材料及使用该接合材料的接合方法 | |
WO2014104032A1 (ja) | 銅粉末の製造方法及び銅粉末、銅ペースト | |
KR102147012B1 (ko) | 은 미립자 분산액 | |
JP6884692B2 (ja) | 銅粉及びそれを含む導電性組成物 | |
WO2014155834A1 (ja) | フレーク状の微小粒子 | |
TWI499679B (zh) | 導電性膏用銅粉及導電性膏 | |
JP5176060B2 (ja) | 銀粒子分散液の製造法 | |
JP5255580B2 (ja) | フレーク銅粉の製造方法 | |
JP5232016B2 (ja) | 配線形成用材料 | |
JP6605848B2 (ja) | 表面被覆金属微粒子の分散溶液、ならびにこの分散溶液の塗布および焼結する工程を含む、焼結導電体および導電接続部材の製造方法 | |
JP6387794B2 (ja) | 有機被覆金属ナノ粒子及びその製造方法 | |
JP2008235035A (ja) | 金属ナノ粒子ペースト及び当該金属ナノ粒子ペーストの製造方法 | |
JP6060225B1 (ja) | 銅粉及びその製造方法 | |
JP6722495B2 (ja) | 銀被覆銅粉およびその製造方法 | |
WO2024071303A1 (ja) | 銅粉及びこれを含む銅ペースト並びに導電膜の製造方法 | |
JPWO2019035246A1 (ja) | 広分布な粒度分布を持つ銀ナノ粒子の製造方法及び銀ナノ粒子 | |
JPWO2018198810A1 (ja) | 広分布な粒度分布を持つ銀ナノ粒子の製造方法及び銀ナノ粒子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13856128 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014548473 Country of ref document: JP Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2013856128 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013856128 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14432646 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20157008392 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |