WO2011033826A1 - 太陽電池、その製造方法及び太陽電池モジュール - Google Patents
太陽電池、その製造方法及び太陽電池モジュール Download PDFInfo
- Publication number
- WO2011033826A1 WO2011033826A1 PCT/JP2010/058706 JP2010058706W WO2011033826A1 WO 2011033826 A1 WO2011033826 A1 WO 2011033826A1 JP 2010058706 W JP2010058706 W JP 2010058706W WO 2011033826 A1 WO2011033826 A1 WO 2011033826A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- receiving surface
- aluminum oxide
- oxide film
- light
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 83
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000010304 firing Methods 0.000 claims abstract description 12
- 238000000605 extraction Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 abstract description 43
- 230000000694 effects Effects 0.000 abstract description 11
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 135
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 238000010438 heat treatment Methods 0.000 description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910018516 Al—O Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007903 penetration ability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a highly productive, inexpensive and highly efficient solar cell, a method for manufacturing the solar cell, and a solar cell module.
- FIG. 1 shows an overview of a P-type substrate solar cell as an example of a general mass-produced solar cell using a conventional single crystal or polycrystalline silicon substrate.
- a PN junction 103 is formed on the light-receiving surface side of a semiconductor substrate (silicon substrate) 101 by diffusing a group V element such as phosphorus at a high concentration to form an N layer 102.
- Both P-type and N-type silicon substrates are formed.
- Dielectric films 104 and 105 having a refractive index lower than that of silicon are formed on the surfaces (light receiving surface and non-light receiving surface) in order to capture light more efficiently.
- titanium oxide, silicon nitride, silicon carbide, silicon oxide, tin oxide and the like are widely used.
- the film thickness of the dielectric film for effective light confinement varies depending on the refractive index of the film, but in the case of a silicon nitride film, it is generally about 80 to 100 nm on the light receiving surface and about 90 to 300 nm on the back surface. .
- electrodes 106 and 107 for taking out photogenerated carriers are formed on the light receiving surface and the non-light receiving surface (back surface).
- a method for forming this electrode from the viewpoint of cost, there is a wide variety of methods in which a metal paste in which metal fine particles such as silver and aluminum are mixed with an organic binder is printed using a screen plate, and is subjected to heat treatment to come into contact with the substrate. It is used.
- the electrode is generally formed after the dielectric film is formed. Therefore, in order to bring the electrode into contact with the silicon substrate, it is necessary to remove the dielectric film between the electrode and the silicon substrate. However, by adjusting the glass component or additive in the metal paste, the metal paste becomes the dielectric film 104. , 105 to contact the silicon substrate, so-called fire-through is possible.
- dielectric films 104 and 105 Another important function of the dielectric films 104 and 105 is suppression of carrier recombination on the surface of the silicon substrate.
- the silicon atoms inside the crystal are in a stable state by covalent bonding between adjacent atoms.
- an unstable energy level called a dangling bond or a dangling bond appears on the surface that is the terminal of the atomic arrangement due to the absence of adjacent atoms to be bonded. Since the dangling bond is electrically active, the charge generated in the silicon is captured and disappears, and the characteristics of the solar cell are impaired.
- the solar cell is subjected to some surface termination treatment to reduce dangling bonds, or by giving electric charge to the antireflection film, thereby increasing the concentration of either electrons or holes on the surface.
- the recombination of electrons and holes is suppressed by greatly reducing.
- the latter is called field effect passivation.
- a silicon nitride film or the like is known to have a positive charge, and is well known as field effect passivation.
- the aluminum oxide film is difficult to fire through at the time of electrode formation, and the electric resistance between the electrode and the silicon substrate is increased, so that sufficient solar cell characteristics cannot be obtained.
- forming an electrode on a silicon substrate on which an aluminum oxide film has been formed requires that the pattern of the film be removed in accordance with the electrode pattern.
- Pattern removal is usually performed by photolithography, patterning with an acid resist or the like, and etching of the film with acid.
- any method not only the number of steps is increased, but also material costs and equipment costs are increased, so that the practicality is extremely low in terms of cost.
- the present invention has been made in view of the above circumstances, and an object thereof is to provide a solar cell that is easy to fire through an aluminum oxide film, has high productivity, is inexpensive and highly efficient, a method for manufacturing the solar cell, and a solar cell module.
- a semiconductor substrate having a light receiving surface and a non-light receiving surface, a PN junction formed on the semiconductor substrate, the light receiving surface and the non-light receiving surface.
- An aluminum oxide film having a thickness of 40 nm or less as a passivation layer for a solar cell comprising a passivation layer formed on one or both of the surfaces and a power extraction electrode formed on the light receiving surface and the non-light receiving surface. It has been found that by forming a layer including a film, a fire-through at the time of electrode formation becomes possible, and a solar cell having good characteristics can be obtained, and the present invention has been made.
- this invention provides the following solar cell, its manufacturing method, and a solar cell module.
- Claim 1 A semiconductor substrate having a light receiving surface and a non-light receiving surface, a PN junction formed on the semiconductor substrate, a passivation layer formed on one or both of the light receiving surface and the non-light receiving surface, and the light receiving surface And a power extraction electrode formed on the non-light-receiving surface, wherein the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less.
- Claim 2 The solar cell according to claim 1, wherein the passivation layer is formed on a non-light-receiving surface of a P-type semiconductor substrate or a light-receiving surface of an N-type semiconductor substrate.
- Claim 3 The passivation layer has an aluminum oxide film and another dielectric film formed on the aluminum oxide film, and the other dielectric film is a film made of silicon oxide, titanium oxide, silicon carbide, or tin oxide.
- Claim 5 The sintered body contains one or more atoms selected from B, Na, Al, K, Ca, Si, V, Zn, Zr, Cd, Sn, Ba, Ta, Tl, Pb, and Bi.
- Claim 4 The solar cell of Claim 4 containing an oxide.
- Claim 6 The solar cell according to claim 4 or 5, wherein a built-in negative charge in the aluminum oxide film is increased by the firing.
- Claim 7 The solar cell according to any one of claims 4 to 6, wherein the aluminum oxide film is present in at least a part of a region other than immediately below the electrode by removing a portion immediately below the electrode due to penetration of the sintered body.
- Claim 8 A solar cell module comprising the solar cells according to claim 1 connected thereto.
- Claim 9 Forming a PN junction on the semiconductor substrate; forming a passivation layer on one or both of the light receiving surface and the non-light receiving surface of the semiconductor substrate; and extracting power on the light receiving surface and the non-light receiving surface.
- a method for manufacturing a solar cell comprising: forming an electrode, wherein an aluminum oxide film having a thickness of 40 nm or less is formed as the passivation layer.
- Claim 10 The electrode and substrate are formed by forming a sintered body by baking the conductive paste at 500 to 900 ° C. for 1 second to 30 minutes, and forming the sintered body through the passivation layer. The method for producing a solar cell according to claim 9, wherein is electrically contacted.
- Claim 11 The sintered body contains one or more atoms selected from B, Na, Al, K, Ca, Si, V, Zn, Zr, Cd, Sn, Ba, Ta, Tl, Pb, and Bi.
- the manufacturing method of the solar cell of Claim 10 containing an oxide.
- Claim 12 The method for manufacturing a solar cell according to claim 10 or 11, wherein a built-in negative charge in the aluminum oxide film is increased by the firing.
- an aluminum oxide film having a specific thickness on the substrate surface particularly the non-light-receiving surface of the P-type semiconductor substrate or the light-receiving surface of the N-type semiconductor substrate
- good passivation performance can be obtained only by baking the conductive paste, which is a conventional technique.
- Good electrical contact between the substrate and the electrode is obtained.
- the annealing step conventionally required for obtaining the passivation effect of the aluminum oxide film can be omitted, which is extremely effective for cost reduction.
- the slice damage on the surface of the semiconductor substrate 201 (301) is removed by etching using a high concentration alkali such as sodium hydroxide or potassium hydroxide having a concentration of 5 to 60% by mass or a mixed acid of hydrofluoric acid and nitric acid.
- a semiconductor substrate such as a P-type or N-type single crystal silicon substrate, a P-type or N-type polycrystalline silicon substrate, or a P-type or N-type thin film silicon substrate can be used.
- the single crystal silicon substrate may be manufactured by either the CZ method or the FZ method.
- an as-cut single crystal ⁇ 100 ⁇ P-type silicon substrate having a specific resistance of 0.1 to 5 ⁇ ⁇ cm by doping high purity silicon with a group III element such as B, Ga, or In can be used.
- Texture is an effective way to reduce solar cell reflectivity.
- the texture is 10 in an alkaline solution (concentration 1 to 10% by mass, temperature 60 to 100 ° C.) such as heated sodium hydroxide, potassium hydroxide, potassium carbonate, sodium carbonate, sodium hydrogen carbonate, tetramethylammonium hydroxide. It is easily produced by immersion for about 30 minutes. In many cases, a predetermined amount of 2-propanol is dissolved in the solution to promote the reaction.
- BSF back surface field
- the BSF layer may be formed on the entire back surface (206 in FIG. 2) or locally according to the pattern of the back electrode (306 in FIG. 3).
- diffusion is performed in a state where two substrates are overlapped, or a diffusion barrier such as silicon nitride is formed on the light receiving surface side. It is preferable to devise such that no P + layer is formed on the light receiving surface.
- the BSF layer has an effect of reducing the electrical resistance between the back electrode 208 (308) and the substrate 201 (301) because impurities are diffused at a high concentration and the carrier concentration is high.
- an N layer 202 (302) is formed by a vapor phase diffusion method using phosphorous oxychloride to form a PN junction 203 (303).
- a PN junction must be formed only on the light-receiving surface.
- diffusion is performed with two P + layers facing each other, or a diffusion barrier such as silicon nitride is formed on the back side.
- a diffusion barrier such as silicon nitride is formed on the back side.
- the glass formed on the surface is removed with hydrofluoric acid or the like.
- this step can also be performed by a spin coating method using a diffusing agent, a spray method, or the like.
- a dielectric film 204 (304) serving as an antireflection film on the light receiving surface of the substrate surface is formed.
- a silicon nitride film or the like is formed to a thickness of about 50 to 100 nm.
- a chemical vapor deposition apparatus hereinafter referred to as CVD
- CVD chemical vapor deposition apparatus
- monosilane (SiH 4 ) and ammonia (NH 3 ) are often used as a reaction gas, but nitrogen is used instead of NH 3.
- the desired refractive index can be realized by diluting the film formation species with H 2 gas, adjusting the process pressure, and diluting the reaction gas.
- silicon oxide, silicon carbide, titanium oxide, or the like by a method such as heat treatment or atomic layer deposition (hereinafter, ALD) may be used instead.
- a passivation film (passivation layer) 205 (305) including an aluminum oxide film 205a (305a) is formed on the P-type silicon surface on the back surface.
- a CVD method or an ALD method is mainly used, but a vacuum evaporation method or a sputtering method may be used.
- trimethylaluminum (TMA) is generally used for the reaction, and hydrogen (H 2 ) or argon (Ar) is used as the carrier gas.
- Film deposition in the CVD method proceeds by decomposing these molecules and attaching them to the substrate, but this decomposition may be performed thermally at 100 to 400 ° C. by heating the substrate or by a high frequency electric field. It may be performed electromagnetically at 100 to 400 ° C., and a crystalline or amorphous film in which the composition ratio of oxygen and aluminum is not limited can be obtained.
- the aluminum oxide film thus obtained has a negative charge, which is considered to be derived from the following chemical reaction formula.
- the reaction in the Al 2 O 3 film is shown. 2Al 2 O 3 ⁇ 3 (AlO 4/2 ) 1 ⁇ + Al 3+
- the film is electrically neutral, but Al 3+ bonds with oxygen present in the aluminum oxide film to form a donor-acceptor pair, thereby eliminating the positive charge, and the film has a negative charge.
- the negative charge generation mechanism described above also applies to aluminum oxide films having an arbitrary constant x in Al 1-x O x and other systems in which aluminum oxide and hydrogen, carbon, nitrogen, etc. are mixed. It is thought that the same applies, that is, it is only necessary that the chemical formula is established between at least a part of Al and O in a system in which Al and O coexist for generation of a negative charge.
- the thickness is 40 nm or less, preferably 30 nm or less, particularly 20 nm or less.
- a lower limit is not specifically limited, In order to cover the board
- another dielectric film 205b (305b) may be formed on the aluminum oxide film 205a (305a).
- silicon oxide (SiO, SiO 2 ) is preferably used from an optical point of view, but titanium oxide (TiO, TiO 2 ), silicon carbide (SiC), tin oxide (SnO, SnO). 2 , SnO 3 ) or the like may be used.
- the film thickness of the dielectric film 205b (305b) on the back surface is preferably 50 to 250 nm, more preferably 100 to 200 nm. If the film thickness is too thin or too thick, the light confinement effect may be insufficient.
- electrodes 207, 208 (307, 308) are formed on the light receiving surface and non-light receiving surface (back surface) of the substrate.
- a conductive paste such as a silver paste in which silver powder and glass frit are mixed with an organic binder is printed on the light-receiving surface and the back surface, and is 1 to 30 minutes, particularly 3 seconds to 15 minutes, 500 to 900 ° C., particularly 700 It is formed by firing at a temperature of about ⁇ 850 ° C.
- the passivation film is eroded by a conductive paste such as a silver paste, and an electrode, which is a sintered body of this conductive paste, fires through (fires through) the passivation film and makes electrical contact with the silicon substrate.
- baking of a light-receiving surface and a back surface electrode can also be performed for each surface.
- the passivation film penetration ability of the conductive paste is imparted by the metal oxide in the conductive paste.
- the metal oxide B, Na, Al, K, Ca, Si, V, Zn, Zr, Cd
- An oxide of an atom selected from Sn, Ba, Ta, Tl, Pb and Bi can be used alone or in combination of two or more.
- the aluminum oxide film is formed in at least a part of the region other than directly under the electrode by removing the portion directly under the electrode by the film penetration of the sintered body, but in order to obtain a good passivation effect, It is preferably formed on the non-light-receiving surface (back surface) and / or the entire light-receiving surface except for the portion to be, particularly the entire non-light-receiving surface of the P-type silicon substrate or the entire light-receiving surface of the N-type silicon substrate.
- the embodiment about the solar cell of this invention was mentioned taking the case where a P-type silicon substrate was used as an example, this invention can also be applied to the solar cell using an N-type silicon substrate.
- the N-type silicon substrate 401 (501) is obtained by doping high-purity silicon with a group V element such as P, As, and Sb, and generally has a resistivity of 0.1. Use one adjusted to ⁇ 5 ⁇ ⁇ cm.
- the N-type silicon solar cell can be manufactured in the same manner as the P-type silicon solar cell described above. However, since the PN junction 403 (503) needs to be formed, the formation of the P + layer 402 (502) is essential.
- the N + layer for forming the BSF layer on the back surface may be formed on the entire back surface (406 in FIG. 4) or locally according to the pattern of the back electrode (FIG. 5). 506).
- the aluminum oxide film 405a (505a) of the present invention is formed on the surface of the P + layer 402 (502), and further, as another dielectric film 405b (505b), silicon oxide (SiO, A dielectric film such as SiO 2 ), titanium oxide (TiO, TiO 2 ), silicon carbide (SiC), or tin oxide (SnO, SnO 2 , SnO 3 ) may be formed in an overlapping manner.
- a dielectric film 404 (504) such as silicon nitride, silicon oxide, silicon carbide, or titanium oxide is preferably formed on the N layer on the back surface.
- the film formation conditions such as the film thickness and the formation conditions of the electrodes 407 and 408 (507 and 508) can be the same as those of the above-described P-type silicon substrate.
- a reflective material on the back surface of the solar cell in order to capture again the light transmitted through the substrate.
- the reflective material aluminum or silver formed by vacuum deposition or the like may be used, but a sufficient effect can be obtained only by using a white backsheet or the like for the solar cell module without performing additional treatment.
- the solar cell module of the present invention can be obtained by electrically connecting the solar cells obtained as described above.
- Example 1 ⁇ Examination of electrode contact resistance>
- the conductive paste conventionally used for the fire-through of the silicon oxide film was used, and the fire-through property for the aluminum oxide film was examined.
- the fire-through property can be evaluated by the contact resistance between the electrode and the silicon substrate.
- a P + layer was formed by performing B diffusion on a P-type silicon wafer having a thickness of 240 ⁇ m and 15 cm square subjected to texture treatment by vapor phase diffusion of boron bromide.
- An aluminum oxide film was formed on the P + layer by ALD, and a silicon oxide film was formed thereon by plasma CVD.
- the film thickness of the silicon oxide film was adjusted so that the total film thickness with the aluminum oxide film was 100 nm.
- a commercially available fire-through Ag paste was printed on the passivation film in a comb-shaped pattern, and baked in a RTP (rapid heat treatment) furnace at a peak temperature of 800 ° C. for 3 seconds. The number of samples prepared is 5 for each condition.
- FIG. 6 shows the relationship of the contact resistance with respect to the film thickness of the aluminum oxide film.
- the effective carrier lifetime is a total carrier lifetime composed of a carrier lifetime in the silicon crystal bulk and a carrier lifetime at the silicon / aluminum oxide film interface, and its unit is microseconds.
- the black square broken line indicates the effective carrier life before heat treatment
- the white square bent line indicates the effective carrier life after heat treatment.
- Example 1 After removing slice damage with a hot concentrated potassium hydroxide aqueous solution on 100 boron-doped ⁇ 100 ⁇ P-type ascut silicon substrates with a substrate thickness of 250 ⁇ m and a specific resistance of 1 ⁇ ⁇ cm, Immersion and texture formation were followed by washing in a hydrochloric acid / hydrogen peroxide mixed solution. Next, in a boron bromide atmosphere, heat treatment was performed at 1000 ° C. with the light receiving surfaces overlapped to form a P + layer. Subsequently, heat treatment was performed in a phosphorus oxychloride atmosphere at 850 ° C. with the back surfaces overlapped to form a PN junction.
- a silicon nitride film having a thickness of 100 nm was formed as an antireflection film over the entire light-receiving surface using a plasma CVD apparatus.
- a backside passivation film was formed on 50 of the obtained substrates.
- an aluminum oxide film having a thickness of 20 nm was formed on the entire back surface at a substrate temperature of 200 ° C. by an atomic layer deposition apparatus.
- TMA was used as the source gas
- oxygen was used as the oxidant.
- the aluminum oxide film obtained by this method was stoichiometric amorphous Al 2 O 3 .
- a silicon oxide film having a thickness of 150 nm was formed by a sputtering apparatus.
- Ag paste was screen-printed in a comb pattern on the light-receiving surface side and the back surface side of all the substrates and dried. Thereafter, baking at 800 ° C.
- an Al film having a thickness of 2 ⁇ m was formed as a reflecting material using a vacuum deposition apparatus.
- Example 1 The same procedure as in Example 1 was performed, except that a 100-nm thick silicon nitride film having the same manufacturing method as that of the substrate light-receiving surface of Example 1 was formed on the remaining 50 back surfaces of the substrate manufactured in Example 1.
- Example 1 When the characteristics of the solar cells obtained in Example 1 and Comparative Example 1 were measured with a current-voltage measuring device using artificial sunlight with an air mass of 1.5, the present invention was implemented as shown in Table 1. The result that the characteristic of the solar cell of Example 1 was superior to the characteristic of the solar cell of Comparative Example 1 was obtained.
- Example 1 good electrical contact was obtained although the thickness of the dielectric film formed on the back surface was thicker than that of Comparative Example 1. Furthermore, since the inversion layer disappeared, the leakage current was eliminated, a good fill factor was obtained, and both the open circuit voltage and the short circuit current were greatly improved.
- Example 2 After removing slice damage with a hot concentrated aqueous solution of potassium hydroxide on 100 phosphorous-doped ⁇ 100 ⁇ N-type as-cut silicon substrates having a substrate thickness of 250 ⁇ m and a specific resistance of 1 ⁇ ⁇ cm, the substrate was placed in an aqueous solution of potassium hydroxide / 2-propanol. Immersion and texture formation were followed by washing in a hydrochloric acid / hydrogen peroxide mixed solution. Next, it heat-processed in the boron bromide atmosphere in the state which accumulated the back surfaces at 1000 degreeC, and formed PN junction. Subsequently, the BSF layer was formed by heat treatment in a phosphorus oxychloride atmosphere at 850 ° C.
- a silicon nitride film having a thickness of 100 nm was formed as a back surface dielectric film on the entire back surface by a plasma CVD apparatus.
- a light-receiving surface passivation film was formed on 50 of the obtained substrates.
- an aluminum oxide film having a thickness of 20 nm was formed on the entire light-receiving surface at a substrate temperature of 200.degree. TMA was used as the source gas, and oxygen was used as the oxidant.
- the aluminum oxide film obtained by this method was stoichiometric amorphous Al 2 O 3 .
- a titanium oxide film having a thickness of 50 nm was formed by atmospheric pressure CVD.
- Ag paste was screen-printed in a comb pattern on the light-receiving surface side and the back surface side of all the substrates and dried. Thereafter, baking at 800 ° C.
- an Al film having a thickness of 2 ⁇ m was formed as a reflecting material using a vacuum deposition apparatus.
- Example 2 The same procedure as in Example 2 was performed, except that 100 nm of a silicon nitride film having the same manufacturing method as that of the back surface of the substrate in Example 2 was formed on the remaining 50 light receiving surfaces of the substrate manufactured in Example 2.
- Example 2 When the characteristics of the solar cells obtained in Example 2 and Comparative Example 2 were measured with a current-voltage measuring device using artificial sunlight with an air mass of 1.5, the present invention was implemented as shown in Table 2. The result that the characteristic of the solar cell of Example 2 was superior to the characteristic of the solar cell of Comparative Example 2 was obtained.
Abstract
Description
なお、本発明に関連する先行技術文献としては、下記のものが挙げられる。
また、一方で、酸化アルミニウム膜のパッシベーション性能を最大限高めるためには、400℃程度の熱処理が必要とされている。このため太陽電池の工程はさらに複雑になり、低コスト化の障害になっていた。さらに一般の高温硬化型導電性ペーストは酸化アルミニウム膜を貫通し難いため、電気抵抗が大きくなり太陽電池の特性を制限してしまう。
請求項1:
受光面及び非受光面を有する半導体基板と、該半導体基板に形成されたPN接合部と、上記受光面及び非受光面のいずれか一方又は両方の面に形成されたパッシベーション層と、上記受光面及び非受光面に形成された電力取り出し用電極とを具備する太陽電池であって、上記パッシベーション層が膜厚40nm以下の酸化アルミニウム膜を含むことを特徴とする太陽電池。
請求項2:
前記パッシベーション層が、P型半導体基板の非受光面又はN型半導体基板の受光面に形成されてなる請求項1記載の太陽電池。
請求項3:
パッシベーション層が、酸化アルミニウム膜と、該酸化アルミニウム膜上に形成された他の誘電体膜とを有し、該他の誘電体膜が酸化シリコン、酸化チタン、炭化シリコン又は酸化錫からなる膜である請求項1又は2記載の太陽電池。
請求項4:
前記電極が導電性ペーストを焼成してなる焼結体であって、この焼結体を前記酸化アルミニウム膜を含むパッシベーション層を貫通させることで、前記電極及び基板を電気的に接触させてなる請求項1乃至3のいずれか1項記載の太陽電池。
請求項5:
前記焼結体が、B、Na、Al、K、Ca、Si、V、Zn、Zr、Cd、Sn、Ba、Ta、Tl、Pb及びBiから選ばれる1種又は2種以上の原子を含む酸化物を含有する請求項4記載の太陽電池。
請求項6:
前記酸化アルミニウム膜における内蔵負電荷が前記焼成により増加する請求項4又は5記載の太陽電池。
請求項7:
前記酸化アルミニウム膜が、前記焼結体の貫通により電極直下となる部分が除去されて該電極直下以外の領域の少なくとも一部に存在する請求項4乃至6のいずれか1項記載の太陽電池。
請求項8:
請求項1乃至7のいずれか1項記載の太陽電池を接続してなることを特徴とする太陽電池モジュール。
請求項9:
半導体基板にPN接合を形成する工程と、該半導体基板の受光面及び非受光面のいずれか一方又は両方の面にパッシベーション層を形成する工程と、前記受光面及び非受光面上に電力取り出し用電極を形成する工程とを含む太陽電池の製造方法であって、前記パッシベーション層として膜厚40nm以下の酸化アルミニウム膜を形成することを特徴とする太陽電池の製造方法。
請求項10:
前記電極を、導電性ペーストを500~900℃で1秒~30分間焼成することにより焼結体を形成し、この焼結体を前記パッシベーション層を貫通して形成することにより、前記電極及び基板を電気的に接触させる請求項9記載の太陽電池の製造方法。
請求項11:
前記焼結体が、B、Na、Al、K、Ca、Si、V、Zn、Zr、Cd、Sn、Ba、Ta、Tl、Pb及びBiから選ばれる1種又は2種以上の原子を含む酸化物を含有する請求項10記載の太陽電池の製造方法。
請求項12:
前記酸化アルミニウム膜における内蔵負電荷が前記焼成により増加する請求項10又は11記載の太陽電池の製造方法。
図2及び図3に本発明の太陽電池の一例を示す。半導体基板201(301)の表面のスライスダメージを、濃度5~60質量%の水酸化ナトリウムや水酸化カリウムのような高濃度のアルカリ又はふっ酸と硝酸の混酸などを用いてエッチング除去する。半導体基板としては、P型又はN型単結晶シリコン基板、P型又はN型多結晶シリコン基板、P型又はN型薄膜シリコン基板等の半導体基板を用いることができる。単結晶シリコン基板は、CZ法、FZ法のいずれの方法によって作製されてもよい。例えば、高純度シリコンにB、Ga、InのようなIII族元素をドープし、比抵抗0.1~5Ω・cmとしたアズカット単結晶{100}P型シリコン基板を用いることができる。
2Al2O3→3(AlO4/2)1-+Al3+
このままでは、膜は電気的に中性であるが、Al3+は酸化アルミニウム膜中に存在する酸素と結合してドナー・アクセプターペアを形成することにより正電荷を消失し、膜は負電荷を持つようになる。
上記の負電荷発生機構は、化学量論組成から外れた、Al1-xOxにおいて任意の定数xの酸化アルミニウム膜や、酸化アルミニウムと水素、炭素、窒素などが混在したその他の系についても同様に適用されると考えられており、即ち負電荷の発生にはAlとOが共存する系において、前記化学式が少なくとも一部のAlとOの間で成立すればよい。
<電極接触抵抗の検討>
酸化アルミニウム膜の膜厚を検討するため、先ずシリコン酸化膜のファイアースルーに従来用いている導電性ペーストを使い、酸化アルミニウム膜に対するファイアースルー性を調べた。ファイアースルー性は電極とシリコン基板間の接触抵抗で評価することができる。
テクスチャ処理を施した厚さ240μm、15cm角のP型シリコンウェハに臭化ホウ素の気相拡散によりB拡散を行なってP+層を形成した。P+層の上に酸化アルミニウム膜をALD法により形成し、その上にシリコン酸化膜をプラズマCVD法で形成した。シリコン酸化膜の膜厚は、酸化アルミニウム膜との合計膜厚が100nmになるように調節した。これらのパッシベーション膜上に市販のファイアースルー型Agペーストを櫛形のパターンで印刷し、RTP(高速熱処理)炉によりピーク温度800℃で3秒間焼成した。作製した試料数は各条件5枚ずつである。
図6は、酸化アルミニウム膜の膜厚に対する接触抵抗の関係を示す。酸化シリコン膜・酸化アルミニウム膜の場合、接触抵抗は酸化アルミニウム膜厚40nm付近で大きく低下し、20nm以下では酸化シリコン膜厚100nm(酸化アルミニウム膜厚=0nm)と同程度の接触抵抗値を得るに至った。この結果から、良好な電気的接触を得るための酸化アルミニウム膜厚は40nm以下、好ましくは30nm以下、特に20nm以下と求められた。
<電極焼成に伴うパッシベーション効果の検討>
次に、酸化アルミニウム膜のパッシベーション効果と膜厚の関係を調べるため、キャリア寿命測定による評価を行った。
酸エッチングで鏡面に仕上げた厚さ200μm、15cm角の0.5Ω・cmP型シリコンウェハ両面に、膜厚の異なる酸化アルミニウム膜をALD法により形成した。さらに、電極焼成熱処理の熱履歴を与えるため、各試料をRTP炉によりピーク温度800℃で3秒間熱処理した。
図7は、熱処理の前後における実効キャリア寿命の測定結果である。実効キャリア寿命とは、シリコンの結晶バルクにおけるキャリア寿命と、シリコン・酸化アルミニウム膜界面におけるキャリア寿命からなる総合的なキャリア寿命であり、単位はマイクロ秒である。図7中、黒四角付き折線は熱処理前の実効キャリア寿命を示し、白四角付き折線は熱処理後の実効キャリア寿命を示す。
基板厚さ250μm、比抵抗1Ω・cmの、ボロンドープ{100}P型アズカットシリコン基板100枚に対し、熱濃水酸化カリウム水溶液によりスライスダメージを除去後、水酸化カリウム/2-プロパノール水溶液中に浸漬し、テクスチャ形成を行い、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。次に、臭化ホウ素雰囲気下、1000℃で受光面同士を重ねた状態で熱処理し、P+層を形成した。続けて、オキシ塩化リン雰囲気下、850℃で裏面同士を重ねた状態で熱処理し、PN接合を形成した。拡散後、フッ酸にてガラス層を除去し、純水洗浄の後、乾燥させた。以上の処理の後、反射防止膜として厚さ100nmの窒化シリコン膜を、プラズマCVD装置により、受光面全面に成膜した。
次に、全基板の受光面側及び裏面側にAgペーストを櫛形パターンでスクリーン印刷し、乾燥した。この後、800℃の焼成を空気雰囲気下3秒間行い、Ag電極に受光面と裏面両面の誘電体膜を貫通させてシリコン基板と導通させた。太陽電池の裏面に、反射材として厚さ2μmのAl膜を真空蒸着装置で形成した。
実施例1で作製した基板の残り50枚の裏面に、実施例1の基板受光面と同じ製法の窒化シリコン膜を100nm成膜した以外は、実施例1と同様に行った。
基板厚さ250μm、比抵抗1Ω・cmの、リンドープ{100}N型アズカットシリコン基板100枚に対し、熱濃水酸化カリウム水溶液によりスライスダメージを除去後、水酸化カリウム/2-プロパノール水溶液中に浸漬し、テクスチャ形成を行い、引き続き塩酸/過酸化水素混合溶液中で洗浄を行った。次に、臭化ホウ素雰囲気下、1000℃で裏面同士を重ねた状態で熱処理し、PN接合を形成した。続けて、オキシ塩化リン雰囲気下、850℃で受光面同士を重ねた状態で熱処理し、BSF層を形成した。拡散後、フッ酸にてガラス層を除去し、純水洗浄の後、乾燥させた。以上の処理の後、裏面誘電体膜として厚さ100nmの窒化シリコン膜を、プラズマCVD装置により、裏面全面に成膜した。
次に、全基板の受光面側及び裏面側にAgペーストを櫛形パターンでスクリーン印刷し、乾燥した。この後、800℃の焼成を空気雰囲気下3秒間行い、Ag電極に受光面と裏面両面の誘電体膜を貫通させてシリコン基板と導通させた。太陽電池の裏面に、反射材として厚さ2μmのAl膜を真空蒸着装置で形成した。
実施例2で作製した基板の残り50枚の受光面に、実施例2の基板裏面と同じ製法の窒化シリコン膜を100nm成膜した以外は、実施例2と同様に行った。
102,202,302 N層
402,502 P層
103,203,303,403,503 PN接合部
104,105,204,304,404,504 誘電体膜
205,305,405,505 パッシベーション膜
205a,305a,405a,505a 酸化アルミニウム膜
205b,305b,405b,505b 誘電体膜
206,306,406,506 裏面電界(BSF)層
106,207,307,407,507 受光面電極
107,208,308,408,508 裏面電極
Claims (12)
- 受光面及び非受光面を有する半導体基板と、該半導体基板に形成されたPN接合部と、上記受光面及び非受光面のいずれか一方又は両方の面に形成されたパッシベーション層と、上記受光面及び非受光面に形成された電力取り出し用電極とを具備する太陽電池であって、上記パッシベーション層が膜厚40nm以下の酸化アルミニウム膜を含むことを特徴とする太陽電池。
- 前記パッシベーション層が、P型半導体基板の非受光面又はN型半導体基板の受光面に形成されてなる請求項1記載の太陽電池。
- パッシベーション層が、酸化アルミニウム膜と、該酸化アルミニウム膜上に形成された他の誘電体膜とを有し、該他の誘電体膜が酸化シリコン、酸化チタン、炭化シリコン又は酸化錫からなる膜である請求項1又は2記載の太陽電池。
- 前記電極が導電性ペーストを焼成してなる焼結体であって、この焼結体を前記酸化アルミニウム膜を含むパッシベーション層を貫通させることで、前記電極及び基板を電気的に接触させてなる請求項1乃至3のいずれか1項記載の太陽電池。
- 前記焼結体が、B、Na、Al、K、Ca、Si、V、Zn、Zr、Cd、Sn、Ba、Ta、Tl、Pb及びBiから選ばれる1種又は2種以上の原子を含む酸化物を含有する請求項4記載の太陽電池。
- 前記酸化アルミニウム膜における内蔵負電荷が前記焼成により増加する請求項4又は5記載の太陽電池。
- 前記酸化アルミニウム膜が、前記焼結体の貫通により電極直下となる部分が除去されて該電極直下以外の領域の少なくとも一部に存在する請求項4乃至6のいずれか1項記載の太陽電池。
- 請求項1乃至7のいずれか1項記載の太陽電池を接続してなることを特徴とする太陽電池モジュール。
- 半導体基板にPN接合を形成する工程と、該半導体基板の受光面及び非受光面のいずれか一方又は両方の面にパッシベーション層を形成する工程と、前記受光面及び非受光面上に電力取り出し用電極を形成する工程とを含む太陽電池の製造方法であって、前記パッシベーション層として膜厚40nm以下の酸化アルミニウム膜を形成することを特徴とする太陽電池の製造方法。
- 前記電極を、導電性ペーストを500~900℃で1秒~30分間焼成することにより焼結体を形成し、この焼結体を前記パッシベーション層を貫通して形成することにより、前記電極及び基板を電気的に接触させる請求項9記載の太陽電池の製造方法。
- 前記焼結体が、B、Na、Al、K、Ca、Si、V、Zn、Zr、Cd、Sn、Ba、Ta、Tl、Pb及びBiから選ばれる1種又は2種以上の原子を含む酸化物を含有する請求項10記載の太陽電池の製造方法。
- 前記酸化アルミニウム膜における内蔵負電荷が前記焼成により増加する請求項10又は11記載の太陽電池の製造方法。
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080050384.8A CN102598308B (zh) | 2009-09-18 | 2010-05-24 | 太阳能电池、其制造方法及太阳能电池组件 |
KR1020177018194A KR20170081735A (ko) | 2009-09-18 | 2010-05-24 | 태양전지, 그 제조방법 및 태양전지 모듈 |
KR1020207013373A KR102247785B1 (ko) | 2009-09-18 | 2010-05-24 | 태양전지, 그 제조방법 및 태양전지 모듈 |
RU2012115464/28A RU2532137C2 (ru) | 2009-09-18 | 2010-05-24 | Солнечный элемент, способ изготовления солнечного элемента и модуль солнечных элементов |
EP10816939.2A EP2479804B1 (en) | 2009-09-18 | 2010-05-24 | Method for manufacturing a solar cell |
CA2774405A CA2774405C (en) | 2009-09-18 | 2010-05-24 | Solar cell, method for manufacturing solar cell, and solar cell module |
KR1020187029823A KR102017558B1 (ko) | 2009-09-18 | 2010-05-24 | 태양전지, 그 제조방법 및 태양전지 모듈 |
EP20196435.0A EP3770974A1 (en) | 2009-09-18 | 2010-05-24 | Solar cell, method for manufacturing solar cell, and solar cell module |
KR1020197023184A KR102111411B1 (ko) | 2009-09-18 | 2010-05-24 | 태양전지, 그 제조방법 및 태양전지 모듈 |
EP20196434.3A EP3806165B1 (en) | 2009-09-18 | 2010-05-24 | Solar cell and method for manufacturing solar cell |
JP2011531826A JP5649580B2 (ja) | 2009-09-18 | 2010-05-24 | 太陽電池の製造方法 |
AU2010296714A AU2010296714B9 (en) | 2009-09-18 | 2010-05-24 | Solar cell, method for manufacturing solar cell, and solar cell module |
US13/496,596 US10032940B2 (en) | 2009-09-18 | 2010-05-24 | Solar cell, method for manufacturing solar cell, and solar cell module |
KR1020207036621A KR102340522B1 (ko) | 2009-09-18 | 2010-05-24 | 태양전지, 그 제조방법 및 태양전지 모듈 |
EP23204282.0A EP4287272A3 (en) | 2009-09-18 | 2010-05-24 | Solar cell and method for manufacturing solar cell |
US16/014,691 US11538944B2 (en) | 2009-09-18 | 2018-06-21 | Solar cell, method for manufacturing solar cell, and solar cell module |
US16/423,325 US11545588B2 (en) | 2009-09-18 | 2019-05-28 | Solar cell, method for manufacturing solar cell, and solar cell module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-217382 | 2009-09-18 | ||
JP2009217382 | 2009-09-18 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/496,596 A-371-Of-International US10032940B2 (en) | 2009-09-18 | 2010-05-24 | Solar cell, method for manufacturing solar cell, and solar cell module |
US16/014,691 Division US11538944B2 (en) | 2009-09-18 | 2018-06-21 | Solar cell, method for manufacturing solar cell, and solar cell module |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011033826A1 true WO2011033826A1 (ja) | 2011-03-24 |
Family
ID=43758439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/058706 WO2011033826A1 (ja) | 2009-09-18 | 2010-05-24 | 太陽電池、その製造方法及び太陽電池モジュール |
Country Status (10)
Country | Link |
---|---|
US (4) | US10032940B2 (ja) |
EP (4) | EP4287272A3 (ja) |
JP (1) | JP5649580B2 (ja) |
KR (6) | KR102017558B1 (ja) |
CN (1) | CN102598308B (ja) |
AU (1) | AU2010296714B9 (ja) |
CA (1) | CA2774405C (ja) |
MY (1) | MY162597A (ja) |
RU (1) | RU2532137C2 (ja) |
WO (1) | WO2011033826A1 (ja) |
Cited By (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102386249A (zh) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
CN102842638A (zh) * | 2011-06-21 | 2012-12-26 | 新日光能源科技股份有限公司 | 太阳能电池及其制造方法 |
JP2013115376A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | 光電変換素子の製造方法および光電変換素子 |
JP2013524510A (ja) * | 2010-03-30 | 2013-06-17 | アプライド マテリアルズ インコーポレイテッド | p型拡散層の上に負荷電パッシベーション層を形成する方法 |
US20130157409A1 (en) * | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
KR20130067208A (ko) * | 2011-12-13 | 2013-06-21 | 삼성에스디아이 주식회사 | 광기전력소자 및 그 제조 방법 |
JP2013128095A (ja) * | 2011-12-16 | 2013-06-27 | Lg Electronics Inc | 太陽電池及びその製造方法 |
WO2013115275A1 (ja) * | 2012-01-30 | 2013-08-08 | 京セラ株式会社 | 光電変換素子の製造方法および光電変換素子 |
CN103247715A (zh) * | 2012-02-10 | 2013-08-14 | 信越化学工业株式会社 | 太阳能电池及其制造方法 |
EP2551914A3 (en) * | 2011-07-25 | 2013-09-25 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
JP2013197295A (ja) * | 2012-03-19 | 2013-09-30 | Kyocera Corp | 光電変換素子および光電変換素子の製造方法 |
WO2013146973A1 (ja) * | 2012-03-30 | 2013-10-03 | 京セラ株式会社 | 太陽電池素子 |
KR20130117097A (ko) * | 2012-04-17 | 2013-10-25 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20130117095A (ko) * | 2012-04-17 | 2013-10-25 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP2013222794A (ja) * | 2012-04-16 | 2013-10-28 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法 |
JP2013222961A (ja) * | 2012-04-17 | 2013-10-28 | Lg Electronics Inc | 太陽電池及びその製造方法 |
WO2014010745A1 (ja) * | 2012-07-12 | 2014-01-16 | 日立化成株式会社 | 太陽電池素子及びその製造方法 |
US20140014175A1 (en) * | 2011-03-31 | 2014-01-16 | Kyocera Corporation | Solar cell element and solar cell module |
JP2014045187A (ja) * | 2012-08-28 | 2014-03-13 | Lg Electronics Inc | 太陽電池の製造方法 |
JP2014075440A (ja) * | 2012-10-03 | 2014-04-24 | Hyogo Prefecture | 界面安定化膜を備えた太陽電池 |
JP2014075418A (ja) * | 2012-10-03 | 2014-04-24 | Ulvac Japan Ltd | 太陽電池用シリコン基板及びその製造方法、並びに太陽電池 |
JP2014212219A (ja) * | 2013-04-19 | 2014-11-13 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
WO2015004767A1 (ja) * | 2013-07-11 | 2015-01-15 | 東芝三菱電機産業システム株式会社 | 太陽電池の製造方法 |
CN104364909A (zh) * | 2012-05-31 | 2015-02-18 | 道康宁公司 | 涂覆有钝化层的硅晶片 |
KR101507767B1 (ko) | 2013-11-07 | 2015-04-07 | 충남대학교산학협력단 | 태양 전지 제조 방법 |
JP2015138959A (ja) * | 2014-01-24 | 2015-07-30 | 三菱電機株式会社 | 光起電力装置および光起電力装置の製造方法 |
JP2015156511A (ja) * | 2015-04-24 | 2015-08-27 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池 |
JP2015164183A (ja) * | 2014-01-30 | 2015-09-10 | 京セラ株式会社 | 太陽電池素子およびその製造方法、並びに、太陽電池モジュールおよびその製造方法 |
WO2015182503A1 (ja) * | 2014-05-29 | 2015-12-03 | 京セラ株式会社 | 太陽電池素子およびその製造方法並びに太陽電池モジュール |
US9269839B2 (en) | 2012-09-27 | 2016-02-23 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
JP2016532317A (ja) * | 2013-09-27 | 2016-10-13 | ダンマークス テクニスク ユニバーシテットDanmarks Tekniske Universitet | ナノ構造化されたシリコン系太陽電池およびナノ構造化されたシリコン系太陽電池を製造する方法 |
JP2017033970A (ja) * | 2015-07-29 | 2017-02-09 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
US9608133B2 (en) | 2011-01-19 | 2017-03-28 | Lg Electronics Inc. | Solar cell |
JP6198996B1 (ja) * | 2016-01-13 | 2017-09-20 | 三菱電機株式会社 | 太陽電池および太陽電池を生産する方法 |
US10276732B2 (en) | 2015-05-27 | 2019-04-30 | Kyocera Corporation | Solar cell element and method of manufacturing solar cell element |
US11222991B2 (en) | 2014-11-05 | 2022-01-11 | Shin-Etsu Chemical Co., Ltd. | Solar cell and method for manufacturing the same |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101624989B1 (ko) * | 2010-09-10 | 2016-05-27 | 주식회사 원익아이피에스 | 태양전지기판의 표면처리방법 및 태양전지 제조방법 |
FI20126253L (fi) * | 2012-11-29 | 2014-05-30 | Beneq Oy | Menetelmä passivointikalvon valmistamiseksi kiteiselle piipinnalle |
CN102945895A (zh) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池氧化铝钝化膜的制备方法 |
KR20150024485A (ko) * | 2013-08-26 | 2015-03-09 | 현대중공업 주식회사 | Perl형 태양전지의 제조방법 |
KR20150035189A (ko) * | 2013-09-27 | 2015-04-06 | 엘지전자 주식회사 | 태양 전지 |
WO2015081927A1 (de) * | 2013-12-06 | 2015-06-11 | Helmholtz-Zentrum Für Materialien Und Energie Gmbh | Passivierungsschicht mit punktkontakten für dünnschichtsolarzellen und verfahren zu ihrer herstellung |
KR101614190B1 (ko) * | 2013-12-24 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
DE102014109179B4 (de) * | 2014-07-01 | 2023-09-14 | Universität Konstanz | Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen |
JP5938113B1 (ja) | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
RU2590284C1 (ru) * | 2015-04-10 | 2016-07-10 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Солнечный элемент |
US11651957B2 (en) | 2015-05-28 | 2023-05-16 | SemiNuclear, Inc. | Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization |
US9972489B2 (en) | 2015-05-28 | 2018-05-15 | SemiNuclear, Inc. | Composition and method for making picocrystalline artificial borane atoms |
RU2632266C2 (ru) * | 2016-02-09 | 2017-10-03 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Гетероструктурный фотоэлектрический преобразователь на основе кристаллического кремния |
RU2632267C2 (ru) * | 2016-03-10 | 2017-10-03 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Структура фотопреобразователя на основе кристаллического кремния и линия по его производству |
CN110050352B (zh) * | 2016-11-07 | 2022-04-29 | 信越化学工业株式会社 | 高效率太阳能电池的制造方法 |
KR20190079622A (ko) * | 2016-11-07 | 2019-07-05 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법 |
EP3548433A4 (en) * | 2016-11-29 | 2020-11-11 | Seminuclear, Inc. | COMPOSITION AND METHOD OF MANUFACTURING ARTIFICIAL PICOCRISTALLINE BORATOMES |
EP3331029B1 (en) * | 2016-12-02 | 2021-09-01 | LG Electronics Inc. | Tandem solar cell and method of manufacturing the same |
JP2018148142A (ja) * | 2017-03-08 | 2018-09-20 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
US20180337292A1 (en) * | 2017-05-19 | 2018-11-22 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
KR102060425B1 (ko) * | 2017-10-31 | 2020-02-11 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이에 포함되는 유리 프릿, 그리고 태양 전지 |
CN108183065A (zh) * | 2017-12-29 | 2018-06-19 | 北京品捷电子科技有限公司 | 一种消除晶圆翘曲的方法及复合衬底 |
CN110718604A (zh) * | 2018-06-26 | 2020-01-21 | 上海硅洋新能源科技有限公司 | P型晶硅太阳能电池的背场及背钝化层制备方法 |
KR102087813B1 (ko) * | 2018-06-28 | 2020-03-19 | 한국에너지기술연구원 | 패시베이션 특성이 향상된 태양전지 |
KR20210010095A (ko) * | 2019-07-19 | 2021-01-27 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102498523B1 (ko) * | 2019-10-16 | 2023-02-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
CN112687763B (zh) * | 2020-12-28 | 2022-12-09 | 天合光能股份有限公司 | 一种钝化接触晶体硅电池制备方法 |
CN113097341B (zh) * | 2021-03-31 | 2023-10-31 | 通威太阳能(安徽)有限公司 | 一种PERC电池、其AlOx镀膜工艺、多层AlOx背钝化结构及方法 |
CN117525212B (zh) * | 2024-01-04 | 2024-03-19 | 无锡松煜科技有限公司 | 一种太阳能电池钝化结构及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548123A (ja) * | 1991-08-14 | 1993-02-26 | Sharp Corp | 光電変換素子 |
JP2004193350A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | 太陽電池セルおよびその製造方法 |
JP2005311060A (ja) * | 2004-04-21 | 2005-11-04 | Sharp Corp | 太陽電池の製造方法、太陽電池 |
WO2008026415A1 (en) * | 2006-08-31 | 2008-03-06 | Shin-Etsu Handotai Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
US20080072959A1 (en) * | 2006-09-27 | 2008-03-27 | Sino-American Silicon Products Inc. | Solar cell and method of fabricating the same |
JP2009164544A (ja) * | 2007-12-28 | 2009-07-23 | Ind Technol Res Inst | 太陽電池のパッシベーション層構造およびその製造方法 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3050064B2 (ja) * | 1994-11-24 | 2000-06-05 | 株式会社村田製作所 | 導電性ペースト、この導電性ペーストからなるグリッド電極が形成された太陽電池及びその製造方法 |
JP2001202822A (ja) * | 2000-01-21 | 2001-07-27 | Murata Mfg Co Ltd | 導電性ペースト |
JP2002270869A (ja) * | 2001-03-12 | 2002-09-20 | Shin Etsu Handotai Co Ltd | 太陽電池 |
JP2003249277A (ja) * | 2002-02-22 | 2003-09-05 | Matsushita Electric Works Ltd | 色素増感太陽電池電極 |
US7045430B2 (en) * | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US6815246B2 (en) * | 2003-02-13 | 2004-11-09 | Rwe Schott Solar Inc. | Surface modification of silicon nitride for thick film silver metallization of solar cell |
JP4118187B2 (ja) * | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
WO2005004198A2 (en) * | 2003-06-13 | 2005-01-13 | North Carolina State University | Complex oxides for use in semiconductor devices and related methods |
US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
US7759158B2 (en) * | 2005-03-22 | 2010-07-20 | Applied Materials, Inc. | Scalable photovoltaic cell and solar panel manufacturing with improved wiring |
JP2008204967A (ja) | 2005-05-31 | 2008-09-04 | Naoetsu Electronics Co Ltd | 太陽電池素子及びその製造方法 |
US7195999B2 (en) * | 2005-07-07 | 2007-03-27 | Micron Technology, Inc. | Metal-substituted transistor gates |
US8721931B2 (en) * | 2005-12-21 | 2014-05-13 | E I Du Pont De Nemours And Company | Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell |
JP4767110B2 (ja) * | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
JP2008066212A (ja) | 2006-09-11 | 2008-03-21 | Toray Ind Inc | 色素増感型太陽電池用導電性基板 |
NL2000248C2 (nl) * | 2006-09-25 | 2008-03-26 | Ecn Energieonderzoek Ct Nederl | Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering. |
WO2008065918A1 (fr) * | 2006-12-01 | 2008-06-05 | Sharp Kabushiki Kaisha | Cellule solaire et son procédé de fabrication |
JPWO2008078374A1 (ja) | 2006-12-25 | 2010-04-15 | ナミックス株式会社 | 太陽電池用導電性ペースト |
KR100974226B1 (ko) * | 2007-03-23 | 2010-08-06 | 엘지전자 주식회사 | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 |
RU2336596C1 (ru) * | 2007-04-11 | 2008-10-20 | Российская академия Сельскохозяйственных наук Государственное научное учреждение Всероссийский научно-исследовательский институт электрификации сельского хозяйства (ГНУ ВИЭСХ) | Полупроводниковый фотоэлектрический генератор (варианты) |
KR100927212B1 (ko) | 2007-07-24 | 2009-11-16 | 한국과학기술연구원 | 속빈 구 형태의 금속산화물 나노입자를 포함하는 염료감응태양전지용 광전극 및 이의 제조방법 |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
CN101816044A (zh) * | 2007-10-18 | 2010-08-25 | E.I.内穆尔杜邦公司 | 导电组合物以及用于制造半导体装置的方法:含镁添加剂 |
US20090126786A1 (en) * | 2007-11-13 | 2009-05-21 | Advent Solar, Inc. | Selective Emitter and Texture Processes for Back Contact Solar Cells |
DE102007054384A1 (de) * | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
CN101488529A (zh) * | 2008-01-16 | 2009-07-22 | 财团法人工业技术研究院 | 太阳能电池的钝化层结构及其制造方法 |
KR101189623B1 (ko) * | 2008-02-19 | 2012-10-10 | 주식회사 엘지화학 | 실리콘 태양전지의 전면전극 형성용 금속 페이스트 조성물및 그 제조 방법과 이를 포함하는 실리콘 태양전지 |
JP5186673B2 (ja) | 2008-04-03 | 2013-04-17 | 信越化学工業株式会社 | 太陽電池の製造方法 |
US20100108134A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
US8298850B2 (en) * | 2009-05-01 | 2012-10-30 | Silicor Materials Inc. | Bifacial solar cells with overlaid back grid surface |
US20110132444A1 (en) * | 2010-01-08 | 2011-06-09 | Meier Daniel L | Solar cell including sputtered reflective layer and method of manufacture thereof |
-
2010
- 2010-05-24 KR KR1020187029823A patent/KR102017558B1/ko active IP Right Grant
- 2010-05-24 KR KR1020127009329A patent/KR20120083400A/ko not_active Application Discontinuation
- 2010-05-24 AU AU2010296714A patent/AU2010296714B9/en not_active Ceased
- 2010-05-24 WO PCT/JP2010/058706 patent/WO2011033826A1/ja active Application Filing
- 2010-05-24 EP EP23204282.0A patent/EP4287272A3/en active Pending
- 2010-05-24 CA CA2774405A patent/CA2774405C/en active Active
- 2010-05-24 KR KR1020177018194A patent/KR20170081735A/ko active Application Filing
- 2010-05-24 RU RU2012115464/28A patent/RU2532137C2/ru active
- 2010-05-24 MY MYPI2012001172A patent/MY162597A/en unknown
- 2010-05-24 EP EP20196435.0A patent/EP3770974A1/en not_active Withdrawn
- 2010-05-24 KR KR1020207036621A patent/KR102340522B1/ko active IP Right Grant
- 2010-05-24 JP JP2011531826A patent/JP5649580B2/ja active Active
- 2010-05-24 EP EP10816939.2A patent/EP2479804B1/en active Active
- 2010-05-24 US US13/496,596 patent/US10032940B2/en active Active
- 2010-05-24 KR KR1020197023184A patent/KR102111411B1/ko active IP Right Grant
- 2010-05-24 EP EP20196434.3A patent/EP3806165B1/en active Active
- 2010-05-24 CN CN201080050384.8A patent/CN102598308B/zh active Active
- 2010-05-24 KR KR1020207013373A patent/KR102247785B1/ko active IP Right Grant
-
2018
- 2018-06-21 US US16/014,691 patent/US11538944B2/en active Active
-
2019
- 2019-05-28 US US16/423,325 patent/US11545588B2/en active Active
-
2022
- 2022-11-16 US US17/988,063 patent/US20230074411A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548123A (ja) * | 1991-08-14 | 1993-02-26 | Sharp Corp | 光電変換素子 |
JP2004193350A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | 太陽電池セルおよびその製造方法 |
JP2005311060A (ja) * | 2004-04-21 | 2005-11-04 | Sharp Corp | 太陽電池の製造方法、太陽電池 |
WO2008026415A1 (en) * | 2006-08-31 | 2008-03-06 | Shin-Etsu Handotai Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
US20080072959A1 (en) * | 2006-09-27 | 2008-03-27 | Sino-American Silicon Products Inc. | Solar cell and method of fabricating the same |
JP2009164544A (ja) * | 2007-12-28 | 2009-07-23 | Ind Technol Res Inst | 太陽電池のパッシベーション層構造およびその製造方法 |
Non-Patent Citations (5)
Title |
---|
B.HOEX ET AL.: "Ultralow surface recombination of c-Si substrates passivated by plasma- assisted atomic layer deposited A1203", APPLIED PHYSICS LETTERS, vol. 89, no. 4, 24 July 2006 (2006-07-24), pages 042112, XP012088131 * |
J. BENIK; B. HOEX; M. C. M. VAN DE SANDEN; W. M. M. KESSELS; O. SCHULTZ; S. W. GLUNZ, APPLIED PHYSICS LETTERS, vol. 92, 2008, pages 253504 |
J.BENICK ET AL.: "High efficiency n-type Si solar cells on A1203-passivated boron emitters", APPLIED PHYSICS LETTERS, vol. 92, no. 25, 23 June 2008 (2008-06-23), pages 253504, XP012107732 * |
S. DAUWE; L. MITTELSTADT; A. METZ; R. HEZEL, PROC. THE 17TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 2001, pages 339 |
S.DAUWE ET AL.: "Loss Mechanism in Silicon Nitride Rear Surface Passivation for Silicon Solar Cells", 17TH EUROPEAN PHOTOVOLATIC SOLAR ENERGY CONFERENCE, 22 October 2001 (2001-10-22) - 26 October 2001 (2001-10-26), pages 339 - 342, XP001139437 * |
Cited By (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013524510A (ja) * | 2010-03-30 | 2013-06-17 | アプライド マテリアルズ インコーポレイテッド | p型拡散層の上に負荷電パッシベーション層を形成する方法 |
US10446697B2 (en) | 2011-01-19 | 2019-10-15 | Lg Electronics Inc. | Solar cell |
US11538945B2 (en) | 2011-01-19 | 2022-12-27 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell |
US9608133B2 (en) | 2011-01-19 | 2017-03-28 | Lg Electronics Inc. | Solar cell |
US20140014175A1 (en) * | 2011-03-31 | 2014-01-16 | Kyocera Corporation | Solar cell element and solar cell module |
CN102842638A (zh) * | 2011-06-21 | 2012-12-26 | 新日光能源科技股份有限公司 | 太阳能电池及其制造方法 |
US9087934B2 (en) | 2011-07-25 | 2015-07-21 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
EP3719852A1 (en) * | 2011-07-25 | 2020-10-07 | LG Electronics Inc. | Solar cell |
EP2551914A3 (en) * | 2011-07-25 | 2013-09-25 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
CN102386249A (zh) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
CN102386249B (zh) * | 2011-10-31 | 2013-08-14 | 北京吉阳技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
JP2013115376A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | 光電変換素子の製造方法および光電変換素子 |
KR20130067208A (ko) * | 2011-12-13 | 2013-06-21 | 삼성에스디아이 주식회사 | 광기전력소자 및 그 제조 방법 |
KR101897723B1 (ko) | 2011-12-13 | 2018-09-12 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광기전력소자 및 그 제조 방법 |
JP2017017364A (ja) * | 2011-12-16 | 2017-01-19 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
US9634160B2 (en) | 2011-12-16 | 2017-04-25 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
JP2013128095A (ja) * | 2011-12-16 | 2013-06-27 | Lg Electronics Inc | 太陽電池及びその製造方法 |
US20130157409A1 (en) * | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
WO2013115275A1 (ja) * | 2012-01-30 | 2013-08-08 | 京セラ株式会社 | 光電変換素子の製造方法および光電変換素子 |
US9871156B2 (en) | 2012-02-10 | 2018-01-16 | Shin-Etsu Chemical Co., Ltd. | Solar cell and method of manufacturing the same |
JP2013165160A (ja) * | 2012-02-10 | 2013-08-22 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法及び太陽電池 |
CN103247715A (zh) * | 2012-02-10 | 2013-08-14 | 信越化学工业株式会社 | 太阳能电池及其制造方法 |
JP2013197295A (ja) * | 2012-03-19 | 2013-09-30 | Kyocera Corp | 光電変換素子および光電変換素子の製造方法 |
WO2013146973A1 (ja) * | 2012-03-30 | 2013-10-03 | 京セラ株式会社 | 太陽電池素子 |
US9735293B2 (en) | 2012-03-30 | 2017-08-15 | Kyocera Corporation | Solar cell element |
CN104247045A (zh) * | 2012-03-30 | 2014-12-24 | 京瓷株式会社 | 太阳能电池元件 |
JP5813212B2 (ja) * | 2012-03-30 | 2015-11-17 | 京セラ株式会社 | 太陽電池素子 |
JP2013222794A (ja) * | 2012-04-16 | 2013-10-28 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法 |
KR20130117097A (ko) * | 2012-04-17 | 2013-10-25 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20130117095A (ko) * | 2012-04-17 | 2013-10-25 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US11335819B2 (en) | 2012-04-17 | 2022-05-17 | Lg Electronics Inc. | Solar cell and methods for manufacturing the same |
JP2013222961A (ja) * | 2012-04-17 | 2013-10-28 | Lg Electronics Inc | 太陽電池及びその製造方法 |
KR101929444B1 (ko) | 2012-04-17 | 2019-03-14 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101929445B1 (ko) | 2012-04-17 | 2018-12-14 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN104364909A (zh) * | 2012-05-31 | 2015-02-18 | 道康宁公司 | 涂覆有钝化层的硅晶片 |
CN104428901A (zh) * | 2012-07-12 | 2015-03-18 | 日立化成株式会社 | 太阳能电池元件及其制造方法 |
WO2014010745A1 (ja) * | 2012-07-12 | 2014-01-16 | 日立化成株式会社 | 太陽電池素子及びその製造方法 |
JPWO2014010745A1 (ja) * | 2012-07-12 | 2016-06-23 | 日立化成株式会社 | 太陽電池素子及びその製造方法 |
TWI589012B (zh) * | 2012-07-12 | 2017-06-21 | 日立化成股份有限公司 | 太陽電池元件及其製造方法 |
US8889464B2 (en) | 2012-08-28 | 2014-11-18 | Lg Electronics Inc. | Method for manufacturing solar cell |
JP2014045187A (ja) * | 2012-08-28 | 2014-03-13 | Lg Electronics Inc | 太陽電池の製造方法 |
US9269839B2 (en) | 2012-09-27 | 2016-02-23 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
JP2014075418A (ja) * | 2012-10-03 | 2014-04-24 | Ulvac Japan Ltd | 太陽電池用シリコン基板及びその製造方法、並びに太陽電池 |
JP2014075440A (ja) * | 2012-10-03 | 2014-04-24 | Hyogo Prefecture | 界面安定化膜を備えた太陽電池 |
JP2014212219A (ja) * | 2013-04-19 | 2014-11-13 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
WO2015004767A1 (ja) * | 2013-07-11 | 2015-01-15 | 東芝三菱電機産業システム株式会社 | 太陽電池の製造方法 |
US9954135B2 (en) | 2013-07-11 | 2018-04-24 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Solar cell manufacturing method |
JPWO2015004767A1 (ja) * | 2013-07-11 | 2017-02-23 | 東芝三菱電機産業システム株式会社 | 太陽電池の製造方法 |
JP2016532317A (ja) * | 2013-09-27 | 2016-10-13 | ダンマークス テクニスク ユニバーシテットDanmarks Tekniske Universitet | ナノ構造化されたシリコン系太陽電池およびナノ構造化されたシリコン系太陽電池を製造する方法 |
KR101507767B1 (ko) | 2013-11-07 | 2015-04-07 | 충남대학교산학협력단 | 태양 전지 제조 방법 |
JP2015138959A (ja) * | 2014-01-24 | 2015-07-30 | 三菱電機株式会社 | 光起電力装置および光起電力装置の製造方法 |
JP2015164183A (ja) * | 2014-01-30 | 2015-09-10 | 京セラ株式会社 | 太陽電池素子およびその製造方法、並びに、太陽電池モジュールおよびその製造方法 |
JPWO2015182503A1 (ja) * | 2014-05-29 | 2017-04-20 | 京セラ株式会社 | 太陽電池素子およびその製造方法並びに太陽電池モジュール |
WO2015182503A1 (ja) * | 2014-05-29 | 2015-12-03 | 京セラ株式会社 | 太陽電池素子およびその製造方法並びに太陽電池モジュール |
US11222991B2 (en) | 2014-11-05 | 2022-01-11 | Shin-Etsu Chemical Co., Ltd. | Solar cell and method for manufacturing the same |
US11227965B2 (en) | 2014-11-05 | 2022-01-18 | Shin-Etsu Chemical Co., Ltd. | Solar cell and method for manufacturing the same |
JP2015156511A (ja) * | 2015-04-24 | 2015-08-27 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池 |
US10276732B2 (en) | 2015-05-27 | 2019-04-30 | Kyocera Corporation | Solar cell element and method of manufacturing solar cell element |
JP2017033970A (ja) * | 2015-07-29 | 2017-02-09 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
JP6198996B1 (ja) * | 2016-01-13 | 2017-09-20 | 三菱電機株式会社 | 太陽電池および太陽電池を生産する方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5649580B2 (ja) | 太陽電池の製造方法 | |
KR102120147B1 (ko) | 태양 전지의 제조 방법 및 태양 전지 | |
WO2011145731A1 (ja) | 太陽電池素子およびその製造方法ならびに太陽電池モジュール | |
JP2012023228A (ja) | 太陽電池の製造方法及び製膜装置 | |
TWI650872B (zh) | 太陽能電池及其製造方法、太陽能電池模組及太陽能電池發電系統 | |
JP5316491B2 (ja) | 太陽電池の製造方法 | |
JP2013222794A (ja) | 太陽電池の製造方法 | |
JP2014007302A (ja) | 界面パッシベーション構造の製造方法および太陽電池 | |
JP5994895B2 (ja) | 太陽電池の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080050384.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10816939 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011531826 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010296714 Country of ref document: AU Ref document number: 2774405 Country of ref document: CA Ref document number: 2412/CHENP/2012 Country of ref document: IN Ref document number: 2010816939 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13496596 Country of ref document: US Ref document number: 12012500545 Country of ref document: PH |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2010296714 Country of ref document: AU Date of ref document: 20100524 Kind code of ref document: A Ref document number: 20127009329 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012115464 Country of ref document: RU |