JPWO2015004767A1 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JPWO2015004767A1 JPWO2015004767A1 JP2015526090A JP2015526090A JPWO2015004767A1 JP WO2015004767 A1 JPWO2015004767 A1 JP WO2015004767A1 JP 2015526090 A JP2015526090 A JP 2015526090A JP 2015526090 A JP2015526090 A JP 2015526090A JP WO2015004767 A1 JPWO2015004767 A1 JP WO2015004767A1
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- JP
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- Prior art keywords
- silicon substrate
- film
- aluminum oxide
- type silicon
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 50
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000003595 mist Substances 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims description 47
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000969 carrier Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000006193 liquid solution Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
図2は、本実施の形態に係る酸化アルミニウム膜5の成膜方法を実現することが可能な成膜装置の概略構成を示す図である。
発明者らは、精力的に、多くの様々な実験・解析等を踏まえた結果、キャリアのライフタイムを大幅に向上させる、酸化アルミニウム膜5の成膜方法を見出すことに成功した。つまり、酸化アルミニウム膜5のパッシベーション効果を増大させる成膜条件を見出すことに成功した。以下、当該成膜方法について説明する。
5 裏面パッシベーション膜(酸化アルミニウム膜)
11 反応容器
13 加熱器
14 (原料)溶液
15 溶液容器
16 ミスト化器
17 オゾン発生器
L1,L2,L3 経路
Claims (2)
- (A)p型の導電型を有するシリコン基板(4)を用意する工程と、
(B)前記シリコン基板の主面に対してパッシベーション膜(5)を成膜する工程と、
(C)前記パッシベーション膜が形成された前記シリコン基板を用いて太陽電池を作製する工程とを、備えており、
前記工程(B)は、
(B−1)アルミニウム元素を含む溶液(14)をミスト化する工程と、
(B−2)大気中において、前記ミスト化された前記溶液を、前記シリコン基板の前記主面に対して噴霧することにより、酸化アルミニウム膜である前記パッシベーション膜を成膜する工程とを、有する、
ことを特徴とする太陽電池の製造方法。 - 前記工程(B−2)は、
オゾンを前記シリコン基板に対して供給し、前記パッシベーション膜を成膜する工程である、
ことを特徴とする請求項1に記載の太陽電池の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/068949 WO2015004767A1 (ja) | 2013-07-11 | 2013-07-11 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015004767A1 true JPWO2015004767A1 (ja) | 2017-02-23 |
JP6109939B2 JP6109939B2 (ja) | 2017-04-05 |
Family
ID=52279489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015526090A Active JP6109939B2 (ja) | 2013-07-11 | 2013-07-11 | 太陽電池の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9954135B2 (ja) |
JP (1) | JP6109939B2 (ja) |
KR (3) | KR20190057413A (ja) |
CN (1) | CN105378938A (ja) |
DE (1) | DE112013007234T5 (ja) |
HK (1) | HK1215821A1 (ja) |
TW (1) | TWI593130B (ja) |
WO (1) | WO2015004767A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107360730B (zh) * | 2015-03-09 | 2020-03-24 | 东芝三菱电机产业系统株式会社 | 太阳能电池的制造方法 |
WO2017043854A1 (ko) * | 2015-09-07 | 2017-03-16 | 엘지전자 주식회사 | 무선 통신 시스템에서 단말 간의 직접 통신을 지원하는 방법 및 이를 위한 장치 |
CN115224153B (zh) * | 2021-03-31 | 2023-09-22 | 浙江晶科能源有限公司 | 太阳能电池片及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010035313A1 (ja) * | 2008-09-24 | 2010-04-01 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法および金属酸化膜の成膜装置 |
WO2011033826A1 (ja) * | 2009-09-18 | 2011-03-24 | 信越化学工業株式会社 | 太陽電池、その製造方法及び太陽電池モジュール |
WO2013038484A1 (ja) * | 2011-09-13 | 2013-03-21 | 東芝三菱電機産業システム株式会社 | 酸化膜成膜方法および酸化膜成膜装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259085B2 (en) * | 2001-12-03 | 2007-08-21 | Nippon Sheet Glass Company, Limited | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate |
JP5645191B2 (ja) * | 2009-04-20 | 2014-12-24 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法および金属酸化膜 |
KR101091505B1 (ko) | 2009-11-03 | 2011-12-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5487449B2 (ja) | 2010-07-28 | 2014-05-07 | 学校法人明治大学 | 太陽電池 |
EP2482328A2 (en) * | 2011-01-31 | 2012-08-01 | Imec | Fabrication method for local back contact photovoltaic cells |
US9232648B2 (en) * | 2011-09-26 | 2016-01-05 | Mitsubishi Gas Chemical Company, Inc. | Molybdenum compound powder, prepreg, and laminate |
KR101776874B1 (ko) * | 2011-12-21 | 2017-09-08 | 엘지전자 주식회사 | 태양 전지 |
WO2013123225A1 (en) * | 2012-02-17 | 2013-08-22 | Applied Materials, Inc. | Passivation film stack for silicon-based solar cells |
CN102945894A (zh) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池氧化铝钝化膜和背电极的制备方法 |
-
2013
- 2013-07-11 WO PCT/JP2013/068949 patent/WO2015004767A1/ja active Application Filing
- 2013-07-11 KR KR1020197014054A patent/KR20190057413A/ko not_active Application Discontinuation
- 2013-07-11 KR KR1020167000051A patent/KR20160017034A/ko active Search and Examination
- 2013-07-11 CN CN201380078121.1A patent/CN105378938A/zh active Pending
- 2013-07-11 KR KR1020177024339A patent/KR20170103028A/ko not_active Application Discontinuation
- 2013-07-11 DE DE112013007234.3T patent/DE112013007234T5/de active Pending
- 2013-07-11 US US14/901,778 patent/US9954135B2/en active Active
- 2013-07-11 JP JP2015526090A patent/JP6109939B2/ja active Active
- 2013-11-13 TW TW102141218A patent/TWI593130B/zh active
-
2016
- 2016-03-31 HK HK16103727.6A patent/HK1215821A1/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010035313A1 (ja) * | 2008-09-24 | 2010-04-01 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法および金属酸化膜の成膜装置 |
WO2011033826A1 (ja) * | 2009-09-18 | 2011-03-24 | 信越化学工業株式会社 | 太陽電池、その製造方法及び太陽電池モジュール |
WO2013038484A1 (ja) * | 2011-09-13 | 2013-03-21 | 東芝三菱電機産業システム株式会社 | 酸化膜成膜方法および酸化膜成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6109939B2 (ja) | 2017-04-05 |
KR20190057413A (ko) | 2019-05-28 |
TW201503401A (zh) | 2015-01-16 |
US9954135B2 (en) | 2018-04-24 |
KR20170103028A (ko) | 2017-09-12 |
CN105378938A (zh) | 2016-03-02 |
KR20160017034A (ko) | 2016-02-15 |
DE112013007234T5 (de) | 2016-04-14 |
WO2015004767A1 (ja) | 2015-01-15 |
TWI593130B (zh) | 2017-07-21 |
US20160204301A1 (en) | 2016-07-14 |
HK1215821A1 (zh) | 2016-09-15 |
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