HK1215821A1 - 太陽能電池的製造方法 - Google Patents
太陽能電池的製造方法Info
- Publication number
- HK1215821A1 HK1215821A1 HK16103727.6A HK16103727A HK1215821A1 HK 1215821 A1 HK1215821 A1 HK 1215821A1 HK 16103727 A HK16103727 A HK 16103727A HK 1215821 A1 HK1215821 A1 HK 1215821A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- solar cell
- cell manufacturing
- manufacturing
- solar
- cell
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/068949 WO2015004767A1 (ja) | 2013-07-11 | 2013-07-11 | 太陽電池の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1215821A1 true HK1215821A1 (zh) | 2016-09-15 |
Family
ID=52279489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK16103727.6A HK1215821A1 (zh) | 2013-07-11 | 2016-03-31 | 太陽能電池的製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9954135B2 (zh) |
JP (1) | JP6109939B2 (zh) |
KR (3) | KR20190057413A (zh) |
CN (1) | CN105378938A (zh) |
DE (1) | DE112013007234T5 (zh) |
HK (1) | HK1215821A1 (zh) |
TW (1) | TWI593130B (zh) |
WO (1) | WO2015004767A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10636919B2 (en) * | 2015-03-09 | 2020-04-28 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Solar cell manufacturing method |
WO2017043854A1 (ko) * | 2015-09-07 | 2017-03-16 | 엘지전자 주식회사 | 무선 통신 시스템에서 단말 간의 직접 통신을 지원하는 방법 및 이를 위한 장치 |
CN115224153B (zh) * | 2021-03-31 | 2023-09-22 | 浙江晶科能源有限公司 | 太阳能电池片及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1462540B1 (en) * | 2001-12-03 | 2012-03-07 | Nippon Sheet Glass Company, Limited | Method for forming thin film. |
CN102165096A (zh) | 2008-09-24 | 2011-08-24 | 东芝三菱电机产业系统株式会社 | 金属氧化膜的成膜方法及金属氧化膜的成膜装置 |
DE112009004681B4 (de) * | 2009-04-20 | 2023-09-07 | Toshiba Mitsubishi-Electric Industrial Systems Corp. | Verfahren zur Bildung eines Metalloxidfilmes und Metalloxidfilm |
CA2774405C (en) | 2009-09-18 | 2017-10-10 | Shin-Etsu Chemical Co., Ltd. | Solar cell, method for manufacturing solar cell, and solar cell module |
KR101091505B1 (ko) | 2009-11-03 | 2011-12-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP5487449B2 (ja) | 2010-07-28 | 2014-05-07 | 学校法人明治大学 | 太陽電池 |
EP2482328A2 (en) * | 2011-01-31 | 2012-08-01 | Imec | Fabrication method for local back contact photovoltaic cells |
JP5841156B2 (ja) | 2011-09-13 | 2016-01-13 | 東芝三菱電機産業システム株式会社 | 酸化膜成膜方法および酸化膜成膜装置 |
CN103827038B (zh) * | 2011-09-26 | 2016-05-11 | 三菱瓦斯化学株式会社 | 钼化合物粉体、预浸料以及层叠板 |
KR101776874B1 (ko) * | 2011-12-21 | 2017-09-08 | 엘지전자 주식회사 | 태양 전지 |
WO2013123225A1 (en) * | 2012-02-17 | 2013-08-22 | Applied Materials, Inc. | Passivation film stack for silicon-based solar cells |
CN102945894A (zh) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池氧化铝钝化膜和背电极的制备方法 |
-
2013
- 2013-07-11 US US14/901,778 patent/US9954135B2/en active Active
- 2013-07-11 CN CN201380078121.1A patent/CN105378938A/zh active Pending
- 2013-07-11 KR KR1020197014054A patent/KR20190057413A/ko not_active Application Discontinuation
- 2013-07-11 DE DE112013007234.3T patent/DE112013007234T5/de active Pending
- 2013-07-11 KR KR1020167000051A patent/KR20160017034A/ko active Search and Examination
- 2013-07-11 JP JP2015526090A patent/JP6109939B2/ja active Active
- 2013-07-11 KR KR1020177024339A patent/KR20170103028A/ko not_active Application Discontinuation
- 2013-07-11 WO PCT/JP2013/068949 patent/WO2015004767A1/ja active Application Filing
- 2013-11-13 TW TW102141218A patent/TWI593130B/zh active
-
2016
- 2016-03-31 HK HK16103727.6A patent/HK1215821A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
DE112013007234T5 (de) | 2016-04-14 |
KR20160017034A (ko) | 2016-02-15 |
KR20170103028A (ko) | 2017-09-12 |
TWI593130B (zh) | 2017-07-21 |
TW201503401A (zh) | 2015-01-16 |
US20160204301A1 (en) | 2016-07-14 |
CN105378938A (zh) | 2016-03-02 |
JPWO2015004767A1 (ja) | 2017-02-23 |
JP6109939B2 (ja) | 2017-04-05 |
US9954135B2 (en) | 2018-04-24 |
KR20190057413A (ko) | 2019-05-28 |
WO2015004767A1 (ja) | 2015-01-15 |
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