JP5645191B2 - 金属酸化膜の成膜方法および金属酸化膜 - Google Patents
金属酸化膜の成膜方法および金属酸化膜 Download PDFInfo
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- JP5645191B2 JP5645191B2 JP2011510106A JP2011510106A JP5645191B2 JP 5645191 B2 JP5645191 B2 JP 5645191B2 JP 2011510106 A JP2011510106 A JP 2011510106A JP 2011510106 A JP2011510106 A JP 2011510106A JP 5645191 B2 JP5645191 B2 JP 5645191B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemically Coating (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Description
図1は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
図9は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
2 基板
3 加熱器
4 溶液
4a ソース液
4b アンモニア液
5 溶液容器
5a,5b 容器
6 ミスト化器
7 オゾン発生器
L1,L2,L3 経路
100,200 成膜装置
Claims (5)
- N型半導体である、金属酸化膜を成膜する金属酸化膜の成膜方法であって、
(A)金属元素およびアンモニアを含む溶液をミスト化させる工程と、
(B)基板を300℃以下で加熱する工程と、
(C)前記工程(B)中の前記基板の第一の主面上に、前記工程(A)においてミスト化された前記溶液を供給する工程とを、備えている、
ことを特徴とする金属酸化膜の成膜方法。 - (D)前記工程(A)の前に、前記アンモニアの前記溶液中における含有量と、成膜される前記金属酸化膜のキャリア濃度と、成膜される前記金属酸化膜の移動度との関係を示すデータを、予め用意する工程と、
(E)前記工程(D)における前記データを用いて、前記溶液中における前記アンモニアの含有量を決定し、当該決定した含有量の前記アンモニア含む前記溶液を作成する工程とを、さらに備えている、
ことを特徴とする請求項1に記載の金属酸化膜の成膜方法。 - 前記金属元素は、
チタン、亜鉛、インジウムおよびスズの内の少なくとも何れか1つである、
ことを特徴とする請求項1または請求項2に記載の金属酸化膜の成膜方法。 - 前記工程(C)は、
前記工程(B)中の前記基板の前記第一の主面上に、前記工程(A)においてミスト化された前記溶液と、オゾンとを供給する工程である、
ことを特徴とする請求項1または請求項2に記載の金属酸化膜の成膜方法。 - 請求項1乃至請求項4のいずれかに記載の金属酸化膜の成膜方法により作成された、ことを特徴とする金属酸化膜。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2009/057858 WO2010122629A1 (ja) | 2009-04-20 | 2009-04-20 | 金属酸化膜の成膜方法、金属酸化膜および金属酸化膜の成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2010122629A1 JPWO2010122629A1 (ja) | 2012-10-22 |
JP5645191B2 true JP5645191B2 (ja) | 2014-12-24 |
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JP2011510106A Active JP5645191B2 (ja) | 2009-04-20 | 2009-04-20 | 金属酸化膜の成膜方法および金属酸化膜 |
Country Status (7)
Country | Link |
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US (1) | US9103028B2 (ja) |
JP (1) | JP5645191B2 (ja) |
KR (1) | KR101340810B1 (ja) |
CN (1) | CN102405305B (ja) |
DE (1) | DE112009004681B4 (ja) |
HK (1) | HK1166824A1 (ja) |
WO (1) | WO2010122629A1 (ja) |
Families Citing this family (10)
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CN102482777B (zh) | 2009-09-02 | 2014-08-06 | 东芝三菱电机产业系统株式会社 | 金属氧化膜的成膜方法、金属氧化膜及金属氧化膜的成膜装置 |
US20130164452A1 (en) * | 2010-06-21 | 2013-06-27 | Beneq Oy | Apparatus and method for coating glass substrate |
CN103648974B (zh) | 2011-09-13 | 2015-10-21 | 东芝三菱电机产业系统株式会社 | 氧化膜成膜方法及氧化膜成膜装置 |
WO2013145160A1 (ja) | 2012-03-28 | 2013-10-03 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の製造方法および金属酸化膜 |
JP6103633B2 (ja) * | 2013-02-08 | 2017-03-29 | 高知県公立大学法人 | オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタの製造方法 |
KR20160017034A (ko) * | 2013-07-11 | 2016-02-15 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 태양전지의 제조 방법 |
WO2016203594A1 (ja) * | 2015-06-18 | 2016-12-22 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法 |
JP6778869B2 (ja) * | 2015-12-11 | 2020-11-04 | 株式会社Flosfia | シリコン酸化膜の製造方法 |
CN106929825B (zh) * | 2017-04-24 | 2019-01-18 | 中南大学 | 一种快速冷却沉积均匀金属氧化膜的装置及方法 |
CN113066900B (zh) * | 2021-03-24 | 2022-03-18 | 河北北方学院 | 一种低成本ZnO透明导电薄膜的制备方法 |
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- 2009-04-20 DE DE112009004681.9T patent/DE112009004681B4/de active Active
- 2009-04-20 JP JP2011510106A patent/JP5645191B2/ja active Active
- 2009-04-20 CN CN200980158921.8A patent/CN102405305B/zh active Active
- 2009-04-20 US US13/265,193 patent/US9103028B2/en active Active
- 2009-04-20 WO PCT/JP2009/057858 patent/WO2010122629A1/ja active Application Filing
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2012
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Also Published As
Publication number | Publication date |
---|---|
US9103028B2 (en) | 2015-08-11 |
WO2010122629A1 (ja) | 2010-10-28 |
KR20120022785A (ko) | 2012-03-12 |
HK1166824A1 (zh) | 2012-11-09 |
DE112009004681T5 (de) | 2012-10-25 |
JPWO2010122629A1 (ja) | 2012-10-22 |
CN102405305B (zh) | 2016-03-16 |
KR101340810B1 (ko) | 2013-12-11 |
CN102405305A (zh) | 2012-04-04 |
DE112009004681B4 (de) | 2023-09-07 |
US20120040083A1 (en) | 2012-02-16 |
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