CN103648974B - 氧化膜成膜方法及氧化膜成膜装置 - Google Patents
氧化膜成膜方法及氧化膜成膜装置 Download PDFInfo
- Publication number
- CN103648974B CN103648974B CN201180072244.5A CN201180072244A CN103648974B CN 103648974 B CN103648974 B CN 103648974B CN 201180072244 A CN201180072244 A CN 201180072244A CN 103648974 B CN103648974 B CN 103648974B
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- Prior art keywords
- film
- oxide
- oxidant
- raw material
- substrate
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0433—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a reactive gas
- B05D3/0453—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0466—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/34—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of sprayed or atomised solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/070783 WO2013038484A1 (ja) | 2011-09-13 | 2011-09-13 | 酸化膜成膜方法および酸化膜成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103648974A CN103648974A (zh) | 2014-03-19 |
CN103648974B true CN103648974B (zh) | 2015-10-21 |
Family
ID=47882751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180072244.5A Active CN103648974B (zh) | 2011-09-13 | 2011-09-13 | 氧化膜成膜方法及氧化膜成膜装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10016785B2 (zh) |
JP (1) | JP5841156B2 (zh) |
KR (1) | KR101505354B1 (zh) |
CN (1) | CN103648974B (zh) |
DE (1) | DE112011105618T5 (zh) |
HK (1) | HK1190999A1 (zh) |
TW (1) | TWI474872B (zh) |
WO (1) | WO2013038484A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014068778A1 (ja) * | 2012-11-05 | 2014-05-08 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
KR20190057413A (ko) * | 2013-07-11 | 2019-05-28 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 태양전지의 제조 방법 |
KR101958122B1 (ko) | 2014-10-01 | 2019-03-13 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치 |
US11555245B2 (en) | 2015-06-18 | 2023-01-17 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Metal oxide film formation method |
JP6563717B2 (ja) * | 2015-07-10 | 2019-08-21 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
US11124877B2 (en) | 2015-10-19 | 2021-09-21 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Film forming device including a detachable bottom plate for forming a film on a substrate |
US10544509B2 (en) | 2015-10-19 | 2020-01-28 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Film forming device |
EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
JP6778869B2 (ja) * | 2015-12-11 | 2020-11-04 | 株式会社Flosfia | シリコン酸化膜の製造方法 |
GB201602083D0 (en) * | 2016-02-05 | 2016-03-23 | Isis Innovation | Metal oxide film |
KR102198676B1 (ko) * | 2016-04-26 | 2021-01-05 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치 |
KR102198675B1 (ko) * | 2016-04-26 | 2021-01-05 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치 |
KR102354893B1 (ko) * | 2017-05-31 | 2022-01-25 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 미스트 도포 성막 장치의 도포 헤드 및 그의 메인터넌스 방법 |
JP6529628B2 (ja) * | 2018-04-17 | 2019-06-12 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
CN115029778A (zh) * | 2022-06-02 | 2022-09-09 | 西安电子科技大学 | 一种氧化镓外延薄膜的生长方法 |
Citations (2)
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JP2010126402A (ja) * | 2008-11-27 | 2010-06-10 | Tosoh Finechem Corp | 酸化亜鉛薄膜の製造方法 |
CN103314134A (zh) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业系统株式会社 | 成膜装置 |
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GB2216903A (en) * | 1988-04-06 | 1989-10-18 | Ici Plc | Transparent conductive zinc oxide layer |
JPH07278817A (ja) * | 1994-04-14 | 1995-10-24 | Murata Mfg Co Ltd | 薄膜製造装置 |
US5540959A (en) * | 1995-02-21 | 1996-07-30 | Howard J. Greenwald | Process for preparing a coated substrate |
US6244575B1 (en) * | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
JPH11209876A (ja) * | 1998-01-26 | 1999-08-03 | Nippon Asm Kk | 薄膜形成装置及び方法 |
JP2000038671A (ja) * | 1998-07-17 | 2000-02-08 | Asahi Chem Ind Co Ltd | 金属酸化物膜蒸着装置 |
TWI290907B (en) | 2000-10-17 | 2007-12-11 | Sharp Kk | Oxide material, method for preparing oxide thin film and element using said material |
US20030049384A1 (en) * | 2001-09-10 | 2003-03-13 | Liu Jean H. | Process and apparatus for preparing transparent electrically conductive coatings |
EP1533835A1 (en) * | 2002-05-29 | 2005-05-25 | Kabushiki Kaisha Watanabe Shoko | Vaporizer, various apparatuses including the same and method of vaporization |
US20050208215A1 (en) * | 2002-06-14 | 2005-09-22 | Yuji Eguchi | Oxide film forming method and oxide film forming apparatus |
US20050106435A1 (en) * | 2003-11-13 | 2005-05-19 | Jang Bor Z. | Twin-wire arc deposited electrode, solid electrolyte membrane, membrane electrode assembly and fuel cell |
JP4453588B2 (ja) * | 2004-03-30 | 2010-04-21 | 三菱マテリアル株式会社 | 金属酸化物膜の成膜装置及び成膜方法 |
JP4453021B2 (ja) | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP4841338B2 (ja) | 2005-07-14 | 2011-12-21 | 株式会社野田スクリーン | 成膜方法、および装置 |
CN101379571B (zh) | 2005-12-16 | 2011-03-30 | 株式会社村田制作所 | 固体电解质的制备方法和固体电解电容器 |
JP2008182183A (ja) * | 2006-12-26 | 2008-08-07 | Doshisha | 原子層成長法を用いた成膜方法及びその成膜装置 |
KR101333379B1 (ko) * | 2008-09-24 | 2013-11-28 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 산화 아연막(ZnO) 또는 산화 마그네슘아연막(ZnMgO)의 성막 방법 및 산화 아연막 또는 산화 마그네슘아연막의 성막 장치 |
KR101333437B1 (ko) | 2008-09-24 | 2013-11-26 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 금속 산화막의 성막 방법 및 금속 산화막의 성막 장치 |
JP5665289B2 (ja) | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
KR101340810B1 (ko) | 2009-04-20 | 2013-12-11 | 고쿠리츠 다이가쿠 호진 교토 다이가쿠 | 금속 산화막의 성막 방법, 금속 산화막 및 금속 산화막의 성막 장치 |
WO2010123030A1 (ja) | 2009-04-21 | 2010-10-28 | 東ソー・ファインケム株式会社 | ドープまたはノンドープの酸化亜鉛薄膜製造用組成物とそれを用いた酸化亜鉛薄膜の製造方法 |
WO2010131621A1 (ja) | 2009-05-12 | 2010-11-18 | 国立大学法人 宮崎大学 | ドープ酸化亜鉛薄膜製造用組成物、酸化亜鉛薄膜の製造方法、帯電防止薄膜、紫外線カット薄膜、透明電極薄膜 |
DE112009005204T5 (de) | 2009-09-02 | 2012-06-28 | Kyoto University | Verfahren zur Bildung eines Metalloxidfilmes, Metalloxidfilm undAnlage zur Bildung des Metalloxidfilmes |
JP5616737B2 (ja) | 2009-11-20 | 2014-10-29 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
-
2011
- 2011-09-13 US US14/131,128 patent/US10016785B2/en active Active
- 2011-09-13 JP JP2013533367A patent/JP5841156B2/ja active Active
- 2011-09-13 WO PCT/JP2011/070783 patent/WO2013038484A1/ja active Application Filing
- 2011-09-13 DE DE112011105618.4T patent/DE112011105618T5/de active Pending
- 2011-09-13 CN CN201180072244.5A patent/CN103648974B/zh active Active
- 2011-09-13 KR KR1020137030729A patent/KR101505354B1/ko active IP Right Grant
- 2011-11-23 TW TW100142866A patent/TWI474872B/zh active
-
2014
- 2014-04-23 HK HK14103912.3A patent/HK1190999A1/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010126402A (ja) * | 2008-11-27 | 2010-06-10 | Tosoh Finechem Corp | 酸化亜鉛薄膜の製造方法 |
CN103314134A (zh) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业系统株式会社 | 成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5841156B2 (ja) | 2016-01-13 |
CN103648974A (zh) | 2014-03-19 |
KR20140012153A (ko) | 2014-01-29 |
KR101505354B1 (ko) | 2015-03-23 |
HK1190999A1 (zh) | 2014-07-18 |
US20140141170A1 (en) | 2014-05-22 |
DE112011105618T5 (de) | 2014-06-18 |
TWI474872B (zh) | 2015-03-01 |
JPWO2013038484A1 (ja) | 2015-03-23 |
TW201311363A (zh) | 2013-03-16 |
WO2013038484A1 (ja) | 2013-03-21 |
US10016785B2 (en) | 2018-07-10 |
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