HK1190999A1 - 氧化膜成膜方法及氧化膜成膜裝置 - Google Patents

氧化膜成膜方法及氧化膜成膜裝置

Info

Publication number
HK1190999A1
HK1190999A1 HK14103912.3A HK14103912A HK1190999A1 HK 1190999 A1 HK1190999 A1 HK 1190999A1 HK 14103912 A HK14103912 A HK 14103912A HK 1190999 A1 HK1190999 A1 HK 1190999A1
Authority
HK
Hong Kong
Prior art keywords
oxide film
film deposition
deposition method
deposition device
oxide
Prior art date
Application number
HK14103912.3A
Other languages
English (en)
Inventor
織田容征
白幡孝洋
平松孝浩
Original Assignee
東芝三菱電機產業系統株式會社 號
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝三菱電機產業系統株式會社 號 filed Critical 東芝三菱電機產業系統株式會社 號
Publication of HK1190999A1 publication Critical patent/HK1190999A1/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0433—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a reactive gas
    • B05D3/0453—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0466—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/34—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of sprayed or atomised solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Nozzles (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
HK14103912.3A 2011-09-13 2014-04-23 氧化膜成膜方法及氧化膜成膜裝置 HK1190999A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/070783 WO2013038484A1 (ja) 2011-09-13 2011-09-13 酸化膜成膜方法および酸化膜成膜装置

Publications (1)

Publication Number Publication Date
HK1190999A1 true HK1190999A1 (zh) 2014-07-18

Family

ID=47882751

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103912.3A HK1190999A1 (zh) 2011-09-13 2014-04-23 氧化膜成膜方法及氧化膜成膜裝置

Country Status (8)

Country Link
US (1) US10016785B2 (zh)
JP (1) JP5841156B2 (zh)
KR (1) KR101505354B1 (zh)
CN (1) CN103648974B (zh)
DE (1) DE112011105618T5 (zh)
HK (1) HK1190999A1 (zh)
TW (1) TWI474872B (zh)
WO (1) WO2013038484A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014068778A1 (ja) * 2012-11-05 2014-05-08 東芝三菱電機産業システム株式会社 成膜装置
DE112013007234T5 (de) 2013-07-11 2016-04-14 Kochi Prefectural Public University Corporation Solarzellenherstellungsverfahren
CN107073487B (zh) * 2014-10-01 2020-03-27 东芝三菱电机产业系统株式会社 成膜装置
DE112015006628T5 (de) * 2015-06-18 2018-03-01 Kochi Prefectural Public University Corporation Verfahren zur Bildung eines Metalloxidfilms
JP6563717B2 (ja) * 2015-07-10 2019-08-21 東芝三菱電機産業システム株式会社 成膜装置
JP6426298B2 (ja) 2015-10-19 2018-11-21 東芝三菱電機産業システム株式会社 成膜装置
US10544509B2 (en) 2015-10-19 2020-01-28 Toshiba Mitsubishi-Electric Industrial Systems Corporation Film forming device
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
JP6778869B2 (ja) * 2015-12-11 2020-11-04 株式会社Flosfia シリコン酸化膜の製造方法
GB201602083D0 (en) * 2016-02-05 2016-03-23 Isis Innovation Metal oxide film
DE112016006797T5 (de) * 2016-04-26 2019-01-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Schichtaufbringungsvorrichtung
WO2017187500A1 (ja) * 2016-04-26 2017-11-02 東芝三菱電機産業システム株式会社 成膜装置
WO2018220756A1 (ja) * 2017-05-31 2018-12-06 東芝三菱電機産業システム株式会社 ミスト塗布成膜装置の塗布ヘッドおよびそのメンテナンス方法
JP6529628B2 (ja) * 2018-04-17 2019-06-12 東芝三菱電機産業システム株式会社 成膜装置
CN115029778A (zh) * 2022-06-02 2022-09-09 西安电子科技大学 一种氧化镓外延薄膜的生长方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2216903A (en) * 1988-04-06 1989-10-18 Ici Plc Transparent conductive zinc oxide layer
JPH07278817A (ja) * 1994-04-14 1995-10-24 Murata Mfg Co Ltd 薄膜製造装置
US5540959A (en) * 1995-02-21 1996-07-30 Howard J. Greenwald Process for preparing a coated substrate
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
JPH11209876A (ja) * 1998-01-26 1999-08-03 Nippon Asm Kk 薄膜形成装置及び方法
JP2000038671A (ja) * 1998-07-17 2000-02-08 Asahi Chem Ind Co Ltd 金属酸化物膜蒸着装置
KR100570576B1 (ko) 2000-10-17 2006-04-13 샤프 가부시키가이샤 산화물 재료, 산화물 박막의 제조 방법 및 상기 재료를사용한 소자
US20030049384A1 (en) * 2001-09-10 2003-03-13 Liu Jean H. Process and apparatus for preparing transparent electrically conductive coatings
TW200401841A (en) * 2002-05-29 2004-02-01 Watanabe M & Co Ltd Vaporizer, various apparatus including the same and method of vaporization
WO2003107409A1 (ja) * 2002-06-01 2003-12-24 積水化学工業株式会社 酸化膜形成方法及び酸化膜形成装置
US20050106435A1 (en) * 2003-11-13 2005-05-19 Jang Bor Z. Twin-wire arc deposited electrode, solid electrolyte membrane, membrane electrode assembly and fuel cell
JP4453588B2 (ja) * 2004-03-30 2010-04-21 三菱マテリアル株式会社 金属酸化物膜の成膜装置及び成膜方法
JP4453021B2 (ja) 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
JP4841338B2 (ja) 2005-07-14 2011-12-21 株式会社野田スクリーン 成膜方法、および装置
TWI428943B (zh) 2005-12-16 2014-03-01 Murata Manufacturing Co 固體電解電容器及其製造方法
JP2008182183A (ja) * 2006-12-26 2008-08-07 Doshisha 原子層成長法を用いた成膜方法及びその成膜装置
WO2010035313A1 (ja) * 2008-09-24 2010-04-01 東芝三菱電機産業システム株式会社 金属酸化膜の成膜方法および金属酸化膜の成膜装置
US9598768B2 (en) * 2008-09-24 2017-03-21 Toshiba Mitsubishi-Electric Industrial Systems Corporation Method of forming zinc oxide film (ZnO) or magnesium zinc oxide film (ZnMgO) and apparatus for forming zinc oxide film or magnesium zinc oxide film
JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5288464B2 (ja) 2008-11-27 2013-09-11 東ソー・ファインケム株式会社 酸化亜鉛薄膜の製造方法
WO2010122629A1 (ja) 2009-04-20 2010-10-28 東芝三菱電機産業システム株式会社 金属酸化膜の成膜方法、金属酸化膜および金属酸化膜の成膜装置
US9096441B2 (en) 2009-04-21 2015-08-04 Tosoh Finechem Corporation Composition for manufacturing doped or undoped zinc oxide thin film and method for manufacturing zinc oxide thin film using same
WO2010131621A1 (ja) 2009-05-12 2010-11-18 国立大学法人 宮崎大学 ドープ酸化亜鉛薄膜製造用組成物、酸化亜鉛薄膜の製造方法、帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
CN102482777B (zh) 2009-09-02 2014-08-06 东芝三菱电机产业系统株式会社 金属氧化膜的成膜方法、金属氧化膜及金属氧化膜的成膜装置
JP5616737B2 (ja) 2009-11-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5529340B2 (ja) 2011-03-15 2014-06-25 東芝三菱電機産業システム株式会社 成膜装置

Also Published As

Publication number Publication date
JPWO2013038484A1 (ja) 2015-03-23
US10016785B2 (en) 2018-07-10
WO2013038484A1 (ja) 2013-03-21
JP5841156B2 (ja) 2016-01-13
KR20140012153A (ko) 2014-01-29
CN103648974B (zh) 2015-10-21
KR101505354B1 (ko) 2015-03-23
US20140141170A1 (en) 2014-05-22
TW201311363A (zh) 2013-03-16
DE112011105618T5 (de) 2014-06-18
CN103648974A (zh) 2014-03-19
TWI474872B (zh) 2015-03-01

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