JPWO2013038484A1 - 酸化膜成膜方法および酸化膜成膜装置 - Google Patents
酸化膜成膜方法および酸化膜成膜装置 Download PDFInfo
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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Abstract
Description
図1は、本実施の形態に係る酸化成膜装置が備える、ミスト噴射用ノズル1の外観構成を示す斜視図である。図1には、座標軸X−Y−Zも併記している。図2は、酸化膜成膜装置全体の概略構成を示す断面図である。ここで、図2は、図1の構成をY方向から眺めた時の断面図である。
1A 本体部
1H 中空部
2 原料ミスト供給口
3 原料ミスト噴出口
4 不活性ガス噴出口
5 酸化剤供給口
6 空洞部
6a 混合領域
7 原料ミスト通路
8 不活性ガス通路
9 酸化剤通路
10 原料ミスト供給通路
20 原料ミスト発生容器
25,40a 超音波霧化器
30 不活性ガス容器
40 酸化剤容器
50 供給調整部
51,51a,52,53,54 配管
100 基板
Claims (15)
- 基板(100)上に酸化膜を成膜する酸化膜成膜方法であって、
(A)大気中において、前記基板に対して、アルキル化合物を含む原料溶液をミスト状にして噴出させる原料ミスト噴出処理と、
(B)前記アルキル化合物に対して酸化作用を有する酸化剤を、前記原料ミスト噴出処理により前記基板に対して噴出された前記ミスト状の原料溶液に対して、供給する酸化剤供給処理とを、実施する、
ことを特徴とする酸化膜成膜方法。 - (C)噴出されたミスト状の前記原料溶液の周辺に対して、不活性ガスを噴出する不活性ガス噴出処理を、さらに実施する、
ことを特徴とする請求項1に記載の酸化膜成膜方法。 - 前記(A)は、
超音波霧化処理により、前記原料溶液をミスト状にするミスト生成処理を、含む、
ことを特徴とする請求項1または請求項2に記載の酸化膜成膜方法。 - 前記アルキル化合物は、
ジエチル亜鉛、ジメチル亜鉛、ジメチルマグネシウム、ジエチルマグネシウム、ビスシクロペンタジエニルマグネシウム、トリメチルアルミニウム、トリエチルアルミニウム、トリメチルガリウム、トリエチルガリウム、トリメチルインジウム、トリエチルインジウム、テトラメチルシラン、テトラエチルシラン、トリメチルシラン、トリエチルシラン、ジメチルシラン、およびジエチルシランの何れかである、
ことを特徴とする請求項1または請求項2に記載の酸化膜成膜方法。 - 前記酸化剤は、
水、酸素、過酸化水素、オゾン、一酸化窒素、亜酸化窒素、および二酸化窒素の何れかである、
ことを特徴とする請求項1または請求項2に記載の酸化膜成膜方法。 - 前記不活性ガスは、
窒素および希ガスの何れかである、
ことを特徴とする請求項2に記載の酸化膜成膜方法。 - 前記(B)は、
所望量で調整された前記酸化剤を供給する前記酸化剤供給処理である、
ことを特徴とする請求項1または請求項2に記載の酸化膜成膜方法。 - 基板(100)上に酸化膜を成膜する酸化膜成膜装置であって、
大気中に配置された前記基板に対して、アルキル化合物を含む原料溶液をミスト状にして噴出する、原料ミスト噴出口(3)と、
前記アルキル化合物に対して酸化作用を有する酸化剤を、前記原料ミスト噴出口から前記基板に向けて噴出されたミスト状の前記原料溶液に対して、供給する酸化剤供給口(5)とを、備える、
ことを特徴とする酸化膜成膜装置。 - 前記ミスト噴出口に隣接して配置される、不活性ガスを噴出する不活性ガス噴出口(4)を、さらに備えている、
ことを特徴とする請求項8に記載の酸化膜成膜装置。 - 前記原料溶液をミスト状にする超音波霧化器(25)を、さらに備えている、
ことを特徴とする請求項8または請求項9に記載の酸化膜成膜装置。 - 前記原料ミスト噴出口、前記酸化剤供給口および前記不活性ガス噴出口は、
同一のノズル(1)に形成されている、
ことを特徴とする請求項9に記載の酸化膜成膜装置。 - 前記アルキル化合物は、
ジエチル亜鉛、ジメチル亜鉛、ジメチルマグネシウム、ジエチルマグネシウム、ビスシクロペンタジエニルマグネシウム、トリメチルアルミニウム、トリエチルアルミニウム、トリメチルガリウム、トリエチルガリウム、トリメチルインジウム、トリエチルインジウム、テトラメチルシラン、テトラエチルシラン、トリメチルシラン、トリエチルシラン、ジメチルシラン、およびジエチルシランの何れかである、
ことを特徴とする請求項8または請求項9に記載の酸化膜成膜装置。 - 前記酸化剤は、
水、酸素、過酸化水素、オゾン、一酸化窒素、亜酸化窒素、および二酸化窒素の何れかである、
ことを特徴とする請求項8または請求項9に記載の酸化膜成膜装置。 - 前記不活性ガスは、
窒素および希ガスの何れかである、
ことを特徴とする請求項9に記載の酸化膜成膜装置。 - 前記酸化剤の供給量を調整する供給調整部(50)を、さらに備えている、
ことを特徴とする請求項8または請求項9に記載の酸化膜成膜装置。
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JP5914690B2 (ja) * | 2012-11-05 | 2016-05-11 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
US9954135B2 (en) | 2013-07-11 | 2018-04-24 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Solar cell manufacturing method |
KR101958122B1 (ko) | 2014-10-01 | 2019-03-13 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치 |
WO2016203594A1 (ja) * | 2015-06-18 | 2016-12-22 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法 |
JP6563717B2 (ja) * | 2015-07-10 | 2019-08-21 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
DE112015007036B4 (de) | 2015-10-19 | 2023-09-28 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Filmbildungsvorrichtung |
US10544509B2 (en) * | 2015-10-19 | 2020-01-28 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Film forming device |
EP3173507A1 (de) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen |
JP6778869B2 (ja) * | 2015-12-11 | 2020-11-04 | 株式会社Flosfia | シリコン酸化膜の製造方法 |
GB201602083D0 (en) * | 2016-02-05 | 2016-03-23 | Isis Innovation | Metal oxide film |
DE112016006798B4 (de) * | 2016-04-26 | 2024-02-22 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Schichtaufbringungsvorrichtung |
CN108699681B (zh) * | 2016-04-26 | 2020-08-25 | 东芝三菱电机产业系统株式会社 | 成膜装置 |
JP6760709B2 (ja) * | 2017-05-31 | 2020-09-23 | 東芝三菱電機産業システム株式会社 | ミスト塗布成膜装置の塗布ヘッドおよびそのメンテナンス方法 |
JP6529628B2 (ja) * | 2018-04-17 | 2019-06-12 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
CN115029778A (zh) * | 2022-06-02 | 2022-09-09 | 西安电子科技大学 | 一种氧化镓外延薄膜的生长方法 |
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CN102405305B (zh) | 2009-04-20 | 2016-03-16 | 东芝三菱电机产业系统株式会社 | 金属氧化膜的成膜方法、金属氧化膜及金属氧化膜的成膜装置 |
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US20140141170A1 (en) | 2014-05-22 |
KR20140012153A (ko) | 2014-01-29 |
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WO2013038484A1 (ja) | 2013-03-21 |
TW201311363A (zh) | 2013-03-16 |
KR101505354B1 (ko) | 2015-03-23 |
TWI474872B (zh) | 2015-03-01 |
US10016785B2 (en) | 2018-07-10 |
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