JP5956559B2 - 金属酸化膜の製造方法 - Google Patents
金属酸化膜の製造方法 Download PDFInfo
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- JP5956559B2 JP5956559B2 JP2014507128A JP2014507128A JP5956559B2 JP 5956559 B2 JP5956559 B2 JP 5956559B2 JP 2014507128 A JP2014507128 A JP 2014507128A JP 2014507128 A JP2014507128 A JP 2014507128A JP 5956559 B2 JP5956559 B2 JP 5956559B2
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- metal oxide
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 174
- 150000004706 metal oxides Chemical class 0.000 title claims description 174
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000002019 doping agent Substances 0.000 claims description 89
- 239000011701 zinc Substances 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 73
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 55
- 229910052725 zinc Inorganic materials 0.000 claims description 55
- 229910052796 boron Inorganic materials 0.000 claims description 25
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- 238000005507 spraying Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000011946 reduction process Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000009467 reduction Effects 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052795 boron group element Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- YAWNFGAHEUCLNJ-UHFFFAOYSA-N [B].OB(O)O Chemical compound [B].OB(O)O YAWNFGAHEUCLNJ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1258—Spray pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Manufacturing Of Electric Cables (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Description
具体的に、本実施の形態に係る金属酸化膜の製造方法を、図1に示した製造装置(成膜装置)を用いて説明する。
2 加熱器
3A,3B,3C 容器
4A,4B,4C 霧化器
5 ドーパント溶液
6 酸化源
7 溶液
8 ノズル
10 金属酸化膜(透明導電膜、亜鉛酸化膜)
12 紫外線ランプ
13 紫外線
L1,L2,L3 経路
Claims (3)
- (A)亜鉛を含む溶液(7)を、非真空下に配置された基板(1)に対して噴霧する工程と、
(B)前記工程(A)の際に、前記基板に対して、ドーパントを含むドーパント溶液(5)を噴霧する工程とを備え、前記ドーパントは、ホウ素、ガリウム、インジウム及びアルミニウムのうちの一つであり、
(C)前記工程(A)および前記工程(B)により、前記基板に成膜された金属酸化膜(10)に対して、紫外線(13)を照射する低抵抗化処理を施す工程とを、備えており、
前記工程(A)および(B)における前記基板に供給される前記亜鉛のモル濃度に対する、前記工程(B)における前記基板に供給される前記ドーパントのモル濃度が、以下の条件(1),あるいは条件(2)を満足すること特徴とする、
(1) 前記ドーパントが、ホウ素、インジウムあるいはアルミニウムの場合、前記ドーパントのモル濃度は0.4%以上であり、
(2) 前記ドーパントが、ガリウムの場合、前記ドーパントのモル濃度は0.33%以上である、
金属酸化膜の製造方法。 - (D)前記工程(A)および(B)の際に、前記基板に対して、酸化源(6)を噴霧する工程を、さらに備えている、
ことを特徴とする請求項1に記載の金属酸化膜の製造方法。 - 前記工程(A)、(B)および(D)において、
前記溶液、前記酸化源および前記ドーパント溶液は各々、別系統(L1,L2,L3)を介して、前記基板(1)に供給される、
ことを特徴とする請求項2に記載の金属酸化膜の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/058153 WO2013145160A1 (ja) | 2012-03-28 | 2012-03-28 | 金属酸化膜の製造方法および金属酸化膜 |
Publications (2)
Publication Number | Publication Date |
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JPWO2013145160A1 JPWO2013145160A1 (ja) | 2015-08-03 |
JP5956559B2 true JP5956559B2 (ja) | 2016-07-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014507128A Active JP5956559B2 (ja) | 2012-03-28 | 2012-03-28 | 金属酸化膜の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10351957B2 (ja) |
JP (1) | JP5956559B2 (ja) |
KR (1) | KR101620255B1 (ja) |
CN (1) | CN104203828B (ja) |
DE (1) | DE112012006124T5 (ja) |
TW (1) | TWI466311B (ja) |
WO (1) | WO2013145160A1 (ja) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2526632B2 (ja) | 1988-04-13 | 1996-08-21 | 三菱マテリアル株式会社 | 透明導電性酸化亜鉛膜の製造方法 |
JPH0945140A (ja) | 1995-07-28 | 1997-02-14 | Sumitomo Metal Mining Co Ltd | 酸化亜鉛系透明導電性膜 |
JP4110752B2 (ja) | 2001-06-28 | 2008-07-02 | 富士ゼロックス株式会社 | 基材上に設けた透明導電膜を低抵抗化する方法。 |
JP2005029408A (ja) * | 2003-07-09 | 2005-02-03 | Nippon Shokubai Co Ltd | 金属酸化物膜の形成方法 |
JP5331382B2 (ja) | 2008-05-30 | 2013-10-30 | 富士フイルム株式会社 | 半導体素子の製造方法 |
DE112008004012T5 (de) | 2008-09-24 | 2011-09-29 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Verfahren zur Erzeugung eines Metalloxidfilmes und Anlage zur Erzeugung eines Metalloxidfilmes |
KR101340810B1 (ko) | 2009-04-20 | 2013-12-11 | 고쿠리츠 다이가쿠 호진 교토 다이가쿠 | 금속 산화막의 성막 방법, 금속 산화막 및 금속 산화막의 성막 장치 |
EP2431330B1 (en) * | 2009-04-21 | 2019-02-27 | Tosoh Finechem Corporation | Composition for forming doped or non-doped zinc oxide thin film, and method for producing zinc oxide thin film using same |
JP5411681B2 (ja) | 2009-12-09 | 2014-02-12 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
US8753987B2 (en) | 2010-06-08 | 2014-06-17 | Sumitomo Metal Mining Co., Ltd. | Method of manufacturing metal oxide film |
US8404302B2 (en) | 2010-07-14 | 2013-03-26 | Sharp Laboratories Of America, Inc. | Solution process for fabricating a textured transparent conductive oxide (TCO) |
TW201213265A (en) | 2010-08-06 | 2012-04-01 | Du Pont | Conductive paste for a solar cell electrode |
-
2012
- 2012-03-28 KR KR1020147026730A patent/KR101620255B1/ko active IP Right Grant
- 2012-03-28 WO PCT/JP2012/058153 patent/WO2013145160A1/ja active Application Filing
- 2012-03-28 US US14/384,603 patent/US10351957B2/en active Active
- 2012-03-28 JP JP2014507128A patent/JP5956559B2/ja active Active
- 2012-03-28 CN CN201280071728.2A patent/CN104203828B/zh active Active
- 2012-03-28 DE DE201211006124 patent/DE112012006124T5/de active Pending
- 2012-06-01 TW TW101119711A patent/TWI466311B/zh active
Also Published As
Publication number | Publication date |
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US20150034885A1 (en) | 2015-02-05 |
TWI466311B (zh) | 2014-12-21 |
CN104203828B (zh) | 2016-08-17 |
US10351957B2 (en) | 2019-07-16 |
TW201340359A (zh) | 2013-10-01 |
KR101620255B1 (ko) | 2016-05-23 |
JPWO2013145160A1 (ja) | 2015-08-03 |
WO2013145160A1 (ja) | 2013-10-03 |
KR20140129271A (ko) | 2014-11-06 |
DE112012006124T5 (de) | 2014-12-18 |
CN104203828A (zh) | 2014-12-10 |
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