JP5323849B2 - 酸化亜鉛膜(ZnO)または酸化マグネシウム亜鉛膜(ZnMgO)の成膜方法 - Google Patents
酸化亜鉛膜(ZnO)または酸化マグネシウム亜鉛膜(ZnMgO)の成膜方法 Download PDFInfo
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Description
図1は、本実施の形態に係る酸化亜鉛膜(ZnO膜)または酸化マグネシウム亜鉛膜(ZnMgO膜)の成膜装置の概略構成を示す図である。
図4は、本実施の形態に係る酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜装置の概略構成を示す図である。
図5は、本実施の形態に係る酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜装置の概略構成を示す図である。
図7は、本実施の形態に係る酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜装置の概略構成を示す図である。
Claims (13)
- 透明性を有する酸化亜鉛膜または透明性を有する酸化マグネシウム亜鉛膜を成膜する方法であって、
(A)亜鉛または亜鉛とマグネシウムを含む溶液をミスト化させる工程と、
(B)基板を加熱する工程と、
(C)前記工程(B)中の前記基板の第一の主面上に、前記工程(A)においてミスト化された前記溶液と、オゾンとを供給する工程とを、備えており、
前記工程(C)は、
前記溶液と前記オゾンとを、交互に、供給する工程である、
ことを特徴とする酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 透明性を有する酸化亜鉛膜または透明性を有する酸化マグネシウム亜鉛膜を成膜する方法であって、
(V)亜鉛または亜鉛とマグネシウムを含む溶液をミスト化させる工程と、
(W)基板の第一の主面上に、前記工程(V)においてミスト化された前記溶液と、酸素またはオゾンとを供給する工程と、
(X)前記酸素または前記オゾンに紫外光を照射する工程とを、備えており、
前記工程(W)は、
前記溶液と前記酸素または前記オゾンとを、交互に、供給する工程である、
ことを特徴とする酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 透明性を有する酸化亜鉛膜または透明性を有する酸化マグネシウム亜鉛膜を成膜する方法であって、
(V)亜鉛または亜鉛とマグネシウムを含む溶液をミスト化させる工程と、
(W)基板の第一の主面上に、前記工程(V)においてミスト化された前記溶液と、酸素またはオゾンとを供給する工程と、
(X)前記酸素または前記オゾンをプラズマ化する工程とを、備えており、
前記工程(W)は、
前記溶液と前記酸素または前記オゾンとを、交互に、供給する工程である、
ことを特徴とする酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(W)は、
加熱されている前記基板に、前記酸素または前記オゾンを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記溶液には、
亜鉛およびマグネシウムの何れかが含有されている化合物が含まれており、
前記化合物は、
アルコキシド化合物、β-ジケトン化合物、カルボン酸塩化合物、ハロゲン化合物、アルキル化合物、およびシクロペンタジエニル化合物の内の少なくとも何れか1つである、
ことを特徴とする請求項1乃至請求項3のいずれかに記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記溶液には、
ホウ素、窒素、フッ素、アルミニウム、燐、塩素、ガリウム、砒素、ニオブ、インジウムおよびアンチモンの何れか1つが、少なくとも含まれている、
ことを特徴とする請求項1乃至請求項3のいずれかに記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(A)または(V)は、
2種類以上の前記溶液を、各々ミスト化させる工程であり、
前記工程(C)または(W)は、
異なる前記溶液を、同時にまたは順次または交互に、供給する工程である、
ことを特徴とする請求項1乃至請求項3のいずれかに記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(C)は、
前記溶液と前記オゾンとを、異なる経路を通して供給する工程である、
ことを特徴とする請求項1に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(W)は、
前記溶液と前記酸素または前記オゾンとを、異なる経路を通して供給する工程である、
ことを特徴とする請求項2または請求項3に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(C)は、
大気圧に配設されている前記基板に、前記溶液と前記オゾンとを供給する工程である、
ことを特徴とする請求項1に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(W)は、
大気圧に配設されている前記基板に、前記溶液と前記酸素または前記オゾンとを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(C)は、
減圧環境下に配設されている前記基板に、前記溶液と前記オゾンとを供給する工程である、
ことを特徴とする請求項1に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。 - 前記工程(W)は、
減圧環境下に配設されている前記基板に、前記溶液と前記酸素または前記オゾンとを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の酸化亜鉛膜または酸化マグネシウム亜鉛膜の成膜方法。
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US (1) | US9598768B2 (ja) |
JP (1) | JP5323849B2 (ja) |
KR (1) | KR101333379B1 (ja) |
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JP5652768B2 (ja) | 2009-09-02 | 2015-01-14 | 東芝三菱電機産業システム株式会社 | 金属酸化膜の成膜方法、金属酸化膜および金属酸化膜の成膜装置 |
US20120225320A1 (en) * | 2009-10-15 | 2012-09-06 | Arkema Inc. | DEPOSITION OF DOPED ZnO FILMS ON POLYMER SUBSTRATES BY UV-ASSISTED CHEMICAL VAPOR DEPOSITION |
JP5475544B2 (ja) * | 2010-05-24 | 2014-04-16 | エア・ウォーター株式会社 | 酸化マグネシウム膜の成膜方法、およびプラズマ生成電極の製造方法 |
FI20115236A0 (fi) * | 2011-03-09 | 2011-03-09 | Beneq Oy | Pinnoitusmenetelmä, laite ja käyttö |
CN103648974B (zh) * | 2011-09-13 | 2015-10-21 | 东芝三菱电机产业系统株式会社 | 氧化膜成膜方法及氧化膜成膜装置 |
US20150010464A1 (en) * | 2012-02-08 | 2015-01-08 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Method for producing metal oxide film and metal oxide film |
JP5914251B2 (ja) * | 2012-08-16 | 2016-05-11 | 東芝三菱電機産業システム株式会社 | 積層フィルム製造装置 |
JP6137668B2 (ja) * | 2012-08-26 | 2017-05-31 | 国立大学法人 熊本大学 | 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置 |
JP6103633B2 (ja) * | 2013-02-08 | 2017-03-29 | 高知県公立大学法人 | オゾン支援による高品質均質金属酸化物薄膜作製技術、及び、該薄膜作製技術による酸化物薄膜トランジスタの製造方法 |
JP6329533B2 (ja) * | 2013-04-17 | 2018-05-23 | 東芝三菱電機産業システム株式会社 | 成膜方法 |
US9583337B2 (en) * | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
CN104568622A (zh) * | 2014-08-15 | 2015-04-29 | 南京汉旗新材料科技有限公司 | 一种粉体硬度的测量方法 |
KR200485392Y1 (ko) | 2016-12-07 | 2018-01-31 | 주식회사 나래나노텍 | 개선된 저온 미스트 cvd 장치 |
CN112133638B (zh) * | 2020-04-28 | 2023-06-16 | 北京环境特性研究所 | 一种基于前驱溶液控制ZnO膜成膜厚度的方法及其应用 |
CN113066900B (zh) * | 2021-03-24 | 2022-03-18 | 河北北方学院 | 一种低成本ZnO透明导电薄膜的制备方法 |
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KR101333379B1 (ko) | 2013-11-28 |
WO2010035312A1 (ja) | 2010-04-01 |
KR20110041569A (ko) | 2011-04-21 |
DE112008004011T5 (de) | 2011-07-14 |
US20110143053A1 (en) | 2011-06-16 |
CN102165097A (zh) | 2011-08-24 |
JPWO2010035312A1 (ja) | 2012-02-16 |
US9598768B2 (en) | 2017-03-21 |
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