CN110050352B - 高效率太阳能电池的制造方法 - Google Patents

高效率太阳能电池的制造方法 Download PDF

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CN110050352B
CN110050352B CN201680090581.XA CN201680090581A CN110050352B CN 110050352 B CN110050352 B CN 110050352B CN 201680090581 A CN201680090581 A CN 201680090581A CN 110050352 B CN110050352 B CN 110050352B
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insulating film
resin
electrode
solar cell
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CN110050352A (zh
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桥上洋
植栗丰敬
渡部武纪
大塚宽之
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Shin Etsu Chemical Co Ltd
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Abstract

本发明是一种太阳能电池的制造方法，其具有下列步骤：于半导体基板的第1主表面形成第1电极的步骤，及以覆盖前述第1电极的至少一部分的方式涂布绝缘膜前驱物的步骤，及使前述绝缘膜前驱物暂硬化的步骤，及于至少前述绝缘膜前驱物上，以与前述第1电极电绝缘的方式涂布导电性糊料的步骤，及使前述导电性糊料硬化来作为第2电极的步骤，以及使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤，将前述导电性糊料以与前述第1电极电绝缘的方式进行涂布的步骤在使前述绝缘膜前驱物暂硬化的步骤之后进行，使前述导电性糊料硬化来作为第2电极的步骤的至少一部分与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分同时进行。由此，可提供生产性高、且具有高光电转换特性的太阳能电池的制造方法。

Description

高效率太阳能电池的制造方法
技术领域
本发明是关于高效率太阳能电池的制造方法。
背景技术
作为提升结晶硅太阳能电池的光电转换效率的手法，近年来，废除受光面的电极来消除因电极的阴影导致的光学损失的所谓背面电极型太阳能电池被广泛探讨。
图1是显示背面电极型太阳能电池的背面的一例的示意图，又，图2是显示图1的一点链线A的剖面者。如图1所示般，于太阳能电池100中，于半导体基板(例如结晶硅基板)110的背面(第1主表面)形成有射极区域(射极层)112。又，挟持射极区域112，以条纹状形成基极区域(基极层)113，于射极区域112上形成射极电极122，进而，多个射极电极122以射极总线(射极用总线电极)132作连结。又，于基极区域113上形成基极电极123，多个基极电极123以基极总线(基极用总线电极)133作连结。另一方面，基极电极123与射极区域112、以及射极电极122与基极区域113以绝缘膜118作电绝缘。又，如图2所示般，太阳能电池100于半导体基板110的第1主表面及第2主表面上具备钝化膜119。另外，于图1中省略钝化膜119。
上述构造，一般而言是通过形成射极电极122与基极电极123之后，将树脂涂布剂通过网版印刷或喷墨印刷、或者分配涂布来对基板上的特定部位进行涂布，并通过热处理或UV照射而使其完全硬化，之后，将以银、铜、铝等的导电体作为主成分的树脂硬化型导电性糊料通过网版印刷或喷墨印刷、或者分配涂布来对基板上的特定部位进行涂布，并以热处理进行硬化而形成。
于专利文献1中记载有于绝缘膜使用聚酰亚胺组成物，通过140℃、10分钟的加热与250℃、约30分钟的加热，将绝缘膜硬化之后，于其上印刷银糊料，并通过以400℃以上、30秒的烧成而形成电极的方法。
现有技术文献
专利文献
专利文献1：日本特开2012-69594号公报
发明内容
发明所要解决的问题
然而，如专利文献1般，若在使绝缘膜充分硬化之后进一步层合热硬化型电极来进行热处理，则有不仅仅热处理会耗费长时间，而使生产性明显降低，也会对绝缘膜施加过剩的热量而使韧性降低，或是绝缘膜收缩而无法得到充分的绝缘性能的问题。
本发明是鉴于上述问题点而完成者，其目的为，提供生产性高、且具有高光电转换特性的太阳能电池的制造方法。
用于解决问题的手段
为了达成上述目的，于本发明中提供一种太阳能电池的制造方法，其特征为，具有下列步骤：于半导体基板的第1主表面形成第1电极的步骤、及以覆盖前述第1电极的至少一部分的方式涂布绝缘膜前驱物的步骤、及使前述绝缘膜前驱物暂硬化的步骤、及于至少前述绝缘膜前驱物上，以与前述第1电极电绝缘的方式涂布导电性糊料的步骤、及使前述导电性糊料硬化来作为第2电极的步骤、以及使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤，将前述导电性糊料以与前述第1电极电绝缘的方式进行涂布的步骤在使前述绝缘膜前驱物暂硬化的步骤之后进行，使前述导电性糊料硬化来作为第2电极的步骤的至少一部分与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分同时进行。
依据如此的方法，可制造生产性高、且具有高光电转换特性的太阳能电池。
又，较佳是使前述导电性糊料硬化来作为第2电极的步骤全体与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤全体同时进行。
依据如此的方法，可将在绝缘膜前驱物的正式硬化时施加于绝缘膜前驱物的热量设为更适当者。
又，较佳是将前述绝缘膜设为含有由聚硅氧树脂、聚酰胺树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、氟树脂、酚树脂、三聚氰胺树脂、脲树脂、聚胺基甲酸酯、环氧树脂、丙烯酸树脂、聚酯树脂及聚乙烯醇(PVA)树脂中所选出的1种以上的树脂者。
此等的树脂由于化学性安定且可使用温度为高，图形形成为容易，因此，于本发明的方法中，绝缘膜以含有此等的树脂为佳。
又，较佳是将前述导电性糊料设为含有由环氧树脂、丙烯酸树脂、聚酯树脂、酚树脂及聚硅氧树脂中选出的1种以上的树脂者。
此等的树脂由于化学性安定且可使用温度为高，图形形成为容易，因此，于本发明的方法中，导电性糊料以含有此等的树脂为佳。
又，较佳是将前述半导体基板设为结晶硅基板。
本发明特别适于具备结晶硅基板的太阳能电池的制造。
发明效果
依据本发明的方法，可以简易的步骤得到高光电转换效率的太阳能电池。尤其，通过将导电性糊料的硬化与绝缘膜前驱物的正式硬化同时进行，而可缩短此等的材料的硬化所需要的时间的合计。又，在进行该同时硬化的情况，相较于在使绝缘膜充分硬化之后形成第2电极的以往的方法，其可将对绝缘膜前驱物所施加的热设为更适当者，而可维持所得的绝缘膜的韧性。如此般，本发明的方法，相较于以往的方法，其由于不易对绝缘膜前驱物施加过剩的热量，因此可防止绝缘膜收缩而无法得到充分的绝缘性能的问题。
附图说明
图1是显示背面电极型太阳能电池的背面构造的图。
图2是显示背面电极型太阳能电池的剖面构造的图。
图3是显示本发明的另一形态的背面电极型太阳能电池的背面构造的图。
图4是显示本发明的另一形态的背面电极型太阳能电池的剖面构造的图。
图5是显示本发明的另一形态的背面电极型太阳能电池的不同位置的剖面构造的图。
具体实施方式
以下，对于本发明进行详细地说明。
如上述般，要求生产性高、且具有高光电转换特性的太阳能电池的制造方法。
本发明者们为了达成上述目的而进行努力探讨。其结果，发现一种太阳能电池的制造方法可解决上述问题，因而完成本发明，该太阳能电池的制造方法，其特征为，具有下列步骤：于半导体基板的第1主表面形成第1电极的步骤、及以覆盖前述第1电极的至少一部分的方式涂布绝缘膜前驱物的步骤、及使前述绝缘膜前驱物暂硬化的步骤、及于至少前述绝缘膜前驱物上，以与前述第1电极电绝缘的方式涂布导电性糊料的步骤、及使前述导电性糊料硬化来作为第2电极的步骤、以及使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤，将前述导电性糊料以与前述第1电极电绝缘的方式进行涂布的步骤在使前述绝缘膜前驱物暂硬化的步骤之后进行，使前述导电性糊料硬化来作为第2电极的步骤的至少一部分与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分同时进行。
以下，虽针对本发明的实施形态，参照附图来更具体地说明，但本发明并不限定于此等。
本发明的太阳能电池的制造方法适用于图1、图2所示的太阳能电池。以下，以N型基板的情况为例使用图1、图2来说明具体的本发明的太阳能电池制造方法。
首先，准备N型结晶硅基板等的N型半导体基板。具体而言，可准备于高纯度硅中掺杂如磷、砷、或锑般的5价元素，并将比电阻设为0.1～5Ω·cm的原切割单结晶{100}N型硅基板。
接着，为了使太阳能电池的反射率降低，可于半导体基板的受光面进行被称为纹理(texture)的微小的凹凸的形成。
接着，如图1、图2所示般，于半导体基板110的背面(第1主表面)，形成与半导体基板110相反的导电型的射极区域112及与半导体基板110相同的导电型的基极区域113。射极区域112及基极区域113的形成方法并无特别限定，可使用以往周知的方法。例如，射极区域112可通过使用有BBr3等的气相扩散而形成。又，基极区域113可通过使用有氧氯化磷(phosphorus oxychloride)的气相扩散而形成。又，在形成射极区域112及基极区域113时可通过使用由氧化硅膜、氮化硅膜等所构成的扩散屏蔽，来形成所期望的形状的射极区域112及基极区域113。例如，如图1所示般，可形成条纹图样的基极区域113，并在形成该基极区域113的部位以外形成射极区域112。
接着，于半导体基板110的受光面及背面形成由氮化硅膜、氧化硅膜等所构成的钝化膜119。氮化硅膜可通过CVD法形成，氧化硅膜可通过CVD法或热氧化法形成。
接着，于半导体基板的第1主表面形成第1电极。在图1所示的背面构造的太阳能电池的情况，于射极区域112与基极区域113上，形成朝水平方向延伸的射极电极122与基极电极123作为第1电极。
第1电极的形成方法虽无特别限制，但就生产性的观点而言，以导电性糊料的网版印刷或分配形成者为佳。于此情况的射极电极122与基极电极123通过将Ag粉末及玻璃粉与有机黏合剂混合而成的Ag糊料，隔着钝化膜119，涂布于射极区域112与基极区域113上进行干燥之后，以1～30分钟、700～880℃左右的温度进行烧成而形成。通过此热处理，钝化膜119会被Ag糊料侵蚀，而使电极与硅电接触。
又，亦可适用电镀。于此情况中，由于必须使电极形成部位的基板表面露出，因此将该部位的钝化膜119以例如激光剥蚀进行去除。
接着，以覆盖第1电极的至少一部分的方式涂布绝缘膜前驱物。在制造图1所示的背面构造的太阳能电池的情况，将绝缘膜前驱物涂布于射极区域112与基极总线133的交叉部位、以及基极区域113与射极总线132的交叉部位。于此情况中，形成为直线状的第1电极的射极电极122中，仅与基极总线133交叉的区域被绝缘膜前驱物所覆盖。又，形成为直线状的第1电极的基极电极123中，仅与射极总线132交叉的区域被绝缘膜前驱物所覆盖。绝缘膜前驱物经过后述的暂硬化及正式硬化而成为绝缘膜。
对于绝缘膜要求化学性安定且可使用温度为高，或图形形成为容易的特性，因此，可使用以聚硅氧树脂、聚酰胺树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、氟树脂、酚树脂、三聚氰胺树脂、脲树脂、聚胺基甲酸酯、环氧树脂、丙烯酸树脂、聚酯树脂及聚乙烯醇(PVA)树脂作为主成分的树脂。此等的树脂可1种单独或将2种以上组合使用。
又，关于绝缘膜前驱物的形成方法虽无特别限制，但就生产性的观点而言，以使用上述树脂或将上述树脂的原料以溶剂等制成糊料状的前驱物，并将其进行网版印刷或分配形成者为佳。溶剂是可因应于绝缘膜中所包含的树脂而适当选择。例如，在形成包含聚酰亚胺树脂的绝缘膜情况，可使用N-甲基-2-吡咯啶酮等。
接着，使绝缘膜前驱物暂硬化。具体而言，在印刷作为绝缘膜前驱物的糊料之后，在大气中，进行低温的热处理，而使绝缘膜前驱物暂硬化。在此，暂硬化指在使绝缘膜前驱物的溶剂挥发、干燥的同时，进行在之后的步骤中绝缘膜前驱物不受到塑性变形的程度的硬化。
此时的热处理条件应依据所使用的绝缘膜前驱物而被最适化，但大多以约80℃至200℃左右，较佳为120℃至200℃左右进行1分钟至10分钟左右的热处理即为充分。若热量不充分，亦即在此时点未达成暂硬化，则在之后的步骤中将电极进行层合时，绝缘膜前驱物会变形而局部性变薄，而变得容易发生短路。相反地，若在此时点施加较多的热量而使绝缘膜前驱物正式硬化，则在之后的步骤中使电极硬化时，会对绝缘膜前驱物施加过剩的热量，使绝缘膜前驱物收缩而局部性变薄，而变得容易发生短路。
如上述般，在使绝缘膜前驱物暂硬化之后，于至少绝缘膜前驱物上，以与第1电极电绝缘的方式涂布导电性糊料。该导电性糊料用以形成第2电极者。亦即，依据本发明，可将第1电极与第2电极通过绝缘膜来电绝缘。在此，在第1电极为射极电极122的情况，作为第2电极可列举基极总线133。又，在第1电极为基极电极123的情况，作为第2电极可列举射极总线132。亦即，如图1所示般，可仅将不同的导电型用的第1电极与第2电极通过绝缘膜而电绝缘，而相同的导电型用的第1电极与第2电极电导通。
第2电极(射极总线132与基极总线133)要求化学性安定且所能使用的温度为高，或图型形成为容易的特性，因此，以将银、铜或铝的粉末与环氧树脂、丙烯酸树脂、聚酯树脂、酚树脂、或聚硅氧树脂混合而制成糊料状，并将其进行网版印刷或分配形成者为佳。此等的树脂可1种单独或将2种以上组合使用。
于此情况中，为了在印刷糊料之后使溶剂挥发，使涂布膜干燥，以在大气中进行低温的热处理者为佳。此干燥步骤在防止涂膜的平坦上为重要。热处理条件虽应依所使用的绝缘膜前驱物而被最适化，但以约80℃至200℃左右进行1分钟至3分钟左右的热处理，使溶剂挥发、干燥。此时的热处理是以加热板进行叶片处理，亦可使用输带炉或移动梁炉。
接着，使导电性糊料硬化来作为第2电极。又，使绝缘膜前驱物正式硬化来作为绝缘膜。于本发明中，使导电性糊料硬化来作为第2电极的步骤的至少一部分与使绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分同时进行。具体而言，将基板在200℃至400℃的大气中进行10秒至5分钟左右热处理，并同时进行绝缘膜前驱物的正式硬化与用以形成总线的导电性糊料的硬化。若为200℃以上，则可得到充分的硬化与接着强度，又，若为400℃以下，则可将施加于树脂的热设为更适当者，而可维持所得的绝缘膜的韧性。此时的热处理适宜使用输带炉或移动梁炉等的在线装置。
在此，在第2电极的硬化温度高于绝缘膜前驱物的正式硬化温度的情况，在到达第2电极的硬化温度之前，开始绝缘膜前驱物的正式硬化。于此情况中，使导电性糊料硬化来作为第2电极的步骤的一部分与使绝缘膜前驱物正式硬化来作为绝缘膜的步骤的一部分同时进行。另一方面，在第2电极的硬化温度与绝缘膜前驱物的正式硬化温度相同的情况，可同时进行使导电性糊料硬化来作为第2电极的步骤全体与使绝缘膜前驱物正式硬化来作为绝缘膜的步骤全体。于后者的情况中，可将在绝缘膜前驱物的正式硬化时施加于绝缘膜前驱物的热量设为更适当者。
以上，虽以基板为N型的情况为例进行说明，但在基板为P型的情况本发明的方法亦可适用。亦即，只要设置N型层作为射极层，并设置P型层作为基极层即可。
本发明的方法可适用于图3～图5所示的太阳能电池。图3是显示作为使用本发明的另一形态的太阳能电池的射极穿透式背电极(emitter wrap-through)型太阳能电池300的背面的图，图4与图5是显示图3中的一点链线A及B的剖面者。另外，图4、图5是使受光面朝下。
于此形态中，基板110的背面的大部分被基极区域113与形成于该基极区域113上的基极电极123所占据，射极区域112以岛状形成在绝缘膜118所挟持的区域。另一方面，受光面是射极区域112所占据，经由开设于基板110的贯通孔而通往背面的射极区域112。又，射极电极122亦与受光面在背面经由贯通孔而连接。于受光面上形成有钝化膜119。又，于基板110的背面的基极电极123上直线状形成有基极总线133。又，于基板110的背面的射极区域112及射极电极122上直线状形成有射极总线132。但，如图5所示般，在作为第2电极的射极总线132与作为第1电极的基极电极123交叉的区域中，基极电极123以绝缘膜118所覆盖。
实施例
以下，虽显示实施例及比较例来更具体地说明本发明，但本发明并不限定于下述的实施例。
(实施例1)
使用本发明的方法来进行图1、图2所示的太阳能电池的制作。
于150mm平方、厚度200μm及比电阻1Ω·cm的磷掺杂<100>n型原切割硅基板中，于基板的背面形成射极区域与基极区域。
将此基板在900℃的氧环境进行10分钟热处理，于基板的两面形成氧化硅膜。接着，于基板两面进一步通过等离子CVD，形成膜厚90nm的氮化硅膜。
其后，于上述射极区域与基极型区域，通过网版印刷涂布Ag糊料，并进行800℃、3秒的热处理，使Ag糊料硬化，而形成射极电极与基极电极。
接着，通过网版印刷，将聚酰亚胺糊料(日立化成制HP-1000)涂布于特定的部位，在120℃的加热板上进行3分钟热处理，使其暂硬化。
接着，通过网版印刷，于基板的背面涂布热硬化型Ag糊料(大研化学工业制CA-8590B)，并在170℃的加热板上进行1分钟干燥后以300℃进行5分钟热处理。另外，在将热硬化型Ag糊料进行涂布时，将射极总线用的热硬化型Ag糊料以与基极电极电绝缘的方式进行涂布，并将基极总线用的热硬化型Ag糊料以与射极电极电绝缘的方式进行涂布(参照图1)。通过上述的热处理，而使聚酰亚胺糊料与热硬化型Ag糊料同时硬化。亦即，使热硬化型Ag糊料硬化来作为射极总线及基极总线的步骤的至少一部分、与使聚酰亚胺糊料正式硬化来作为绝缘膜的步骤的至少一部分同时进行。以如此方式得到太阳能电池单元。
使用氙气灯光源式的人造太阳光来测定所制作的太阳能电池的输出特性。
(实施例2)
使用与实施例1相同的基板，通过相同的太阳能电池制造步骤来进行直到射极电极与基极电极的形成为止。
接着，通过网版印刷，将环氧糊料(信越化学工业制SFX513M1LC)涂布于特定的部位，在170℃的加热板上进行1分钟热处理，使其暂硬化。
以与实施例1相同方式进行之后的步骤，而得到太阳能电池单元。
使用氙气灯光源式的人造太阳光来测定所制作的太阳能电池的输出特性。
(比较例1)
使用与实施例1相同的基板，通过相同的太阳能电池制造步骤来进行直到射极电极与基极电极的形成为止。
接着，通过网版印刷，将聚酰亚胺糊料(日立化成制HP-1000)涂布于特定的部位，在100℃的加热板上进行3分钟热处理，使其干燥。此时，聚酰亚胺糊料并未被暂硬化。
以与实施例1相同方式进行之后的步骤，而得到太阳能电池单元。
使用氙气灯光源式的人造太阳光来测定所制作的太阳能电池的输出特性。
(比较例2)
使用与实施例1相同的基板，通过相同的太阳能电池制造步骤来进行直到射极电极与基极电极的形成为止。
接着，通过网版印刷，将聚酰亚胺糊料(日立化成制HP-1000)涂布于特定的部位，在100℃的加热板上进行3分钟热处理，使其干燥后，在200℃的加热板上进行1小时热处理，使其硬化。亦即，在涂布射极总线与基极总线形成用的热硬化型Ag糊料之前，使聚酰亚胺糊料正式硬化。
以与实施例1相同方式进行之后的步骤，而得到太阳能电池单元。
使用氙气灯光源式的人造太阳光来测定所制作的太阳能电池的输出特性。
表1显示实施例1、2及比较例1、2的太阳能电池特性。
【表1】
Figure BDA0002046885960000101
如表1所示般，实施例1及2是显示高于比较例1(将导电性糊料以与第1电极电绝缘的方式涂布的步骤，并非在使绝缘膜前驱物暂硬化的步骤之后进行的例子)及比较例2(使导电性糊料硬化来作为第2电极的步骤的至少一部分与使绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分并非同时进行的例子)的太阳能电池特性，显示出通过本发明，可以简易的步骤实现高效率的太阳能电池。
另外，本发明并不限定于上述实施形态。上述实施形态为例示，具有与本发明的权利要求所记载的技术性思想实质上相同的构成，发挥相同的作用效果者是任何者皆包含于本发明的技术性范围中。

Claims (7)

1.一种太阳能电池的制造方法，其特征在于，具有下列步骤：
于半导体基板的第1主表面形成第1电极的步骤，及
以覆盖前述第1电极的至少一部分的方式涂布绝缘膜前驱物的步骤，及
使前述绝缘膜前驱物暂硬化的步骤，及
于至少前述绝缘膜前驱物上，以与前述第1电极电绝缘的方式涂布导电性糊料的步骤，及
使前述导电性糊料硬化来作为第2电极的步骤，以及
使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤，
将前述导电性糊料以与前述第1电极电绝缘的方式进行涂布的步骤在使前述绝缘膜前驱物暂硬化的步骤之后进行，
使前述导电性糊料硬化来作为第2电极的步骤的至少一部分与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤的至少一部分同时进行。
2.根据权利要求1所述的太阳能电池的制造方法，其中，使前述导电性糊料硬化来作为第2电极的步骤全体与使前述绝缘膜前驱物正式硬化来作为绝缘膜的步骤全体同时进行。
3.根据权利要求1所述的太阳能电池的制造方法，其将前述绝缘膜设为含有由聚硅氧树脂、聚酰胺树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、氟树脂、酚树脂、三聚氰胺树脂、脲树脂、聚胺基甲酸酯、环氧树脂、丙烯酸树脂、聚酯树脂及聚乙烯醇(PVA)树脂中所选出的1种以上的树脂。
4.根据权利要求2所述的太阳能电池的制造方法，其将前述绝缘膜设为含有由聚硅氧树脂、聚酰胺树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、氟树脂、酚树脂、三聚氰胺树脂、脲树脂、聚胺基甲酸酯、环氧树脂、丙烯酸树脂、聚酯树脂及聚乙烯醇(PVA)树脂中所选出的1种以上的树脂。
5.根据权利要求1至4中任一项所述的太阳能电池的制造方法，其将前述导电性糊料设为含有由环氧树脂、丙烯酸树脂、聚酯树脂、酚树脂及聚硅氧树脂中所选出的1种以上的树脂。
6.根据权利要求1至4中任一项所述的太阳能电池的制造方法，其将前述半导体基板设为结晶硅基板。
7.根据权利要求5所述的太阳能电池的制造方法，其将前述半导体基板设为结晶硅基板。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057423A (ja) * 2000-08-07 2002-02-22 Matsushita Electric Ind Co Ltd 導電性ペーストを用いた回路基板とその製造方法
JP2009253096A (ja) * 2008-04-08 2009-10-29 Sharp Corp 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール
KR20150051181A (ko) * 2013-10-31 2015-05-11 재단법인대구경북과학기술원 ＣＺＴＳＳｅ계 박막 태양전지의 제조방법 및 이에 의해 제조된 ＣＺＴＳＳｅ계 박막 태양전지
WO2016125430A1 (ja) * 2015-02-05 2016-08-11 信越化学工業株式会社 裏面接合型太陽電池
CN106575679A (zh) * 2014-09-30 2017-04-19 信越化学工业株式会社 太阳能电池及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345470A (ja) * 2000-06-01 2001-12-14 Canon Inc 光起電力素子の製造方法
JP2008306129A (ja) * 2007-06-11 2008-12-18 Clean Venture 21 Corp 光電変換装置の製造方法
EP2068369A1 (en) * 2007-12-03 2009-06-10 Interuniversitair Microelektronica Centrum (IMEC) Photovoltaic cells having metal wrap through and improved passivation
JP2009218490A (ja) * 2008-03-12 2009-09-24 Citizen Holdings Co Ltd 太陽電池装置の製造方法
US8158504B2 (en) * 2008-05-30 2012-04-17 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
WO2011033826A1 (ja) * 2009-09-18 2011-03-24 信越化学工業株式会社 太陽電池、その製造方法及び太陽電池モジュール
JP2012069594A (ja) 2010-09-21 2012-04-05 Pi R & D Co Ltd 太陽電池内の絶縁膜形成用ポリイミド樹脂組成物及びそれを用いた太陽電池内の絶縁膜形成方法
US9281435B2 (en) * 2011-05-27 2016-03-08 Csi Cells Co., Ltd Light to current converter devices and methods of manufacturing the same
WO2013125430A1 (ja) 2012-02-23 2013-08-29 永田精機株式会社 穿刺針、その製造方法およびその製造装置
JP2014045124A (ja) * 2012-08-28 2014-03-13 Sharp Corp 太陽電池およびその製造方法、並びに太陽電池モジュールおよびその製造方法
JP2014120554A (ja) * 2012-12-14 2014-06-30 Sharp Corp 太陽電池及びその製造方法
US10249775B2 (en) 2014-06-11 2019-04-02 Shin-Etsu Chemical Co., Ltd. Solar cell and method for producing solar cell
JP2016219452A (ja) * 2015-05-14 2016-12-22 富士通株式会社 多層基板及び多層基板の製造方法
EP3333901B1 (en) 2016-10-05 2020-12-30 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a high photoelectric conversion efficiency solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057423A (ja) * 2000-08-07 2002-02-22 Matsushita Electric Ind Co Ltd 導電性ペーストを用いた回路基板とその製造方法
JP2009253096A (ja) * 2008-04-08 2009-10-29 Sharp Corp 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール
KR20150051181A (ko) * 2013-10-31 2015-05-11 재단법인대구경북과학기술원 ＣＺＴＳＳｅ계 박막 태양전지의 제조방법 및 이에 의해 제조된 ＣＺＴＳＳｅ계 박막 태양전지
CN106575679A (zh) * 2014-09-30 2017-04-19 信越化学工业株式会社 太阳能电池及其制造方法
WO2016125430A1 (ja) * 2015-02-05 2016-08-11 信越化学工業株式会社 裏面接合型太陽電池

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