TWI635623B - High-efficiency solar cell manufacturing method - Google Patents

High-efficiency solar cell manufacturing method Download PDF

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TWI635623B
TWI635623B TW106107412A TW106107412A TWI635623B TW I635623 B TWI635623 B TW I635623B TW 106107412 A TW106107412 A TW 106107412A TW 106107412 A TW106107412 A TW 106107412A TW I635623 B TWI635623 B TW I635623B
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insulating film
electrode
solar cell
resin
resins
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TW201818567A (zh
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橋上洋
植栗豊敬
渡部武紀
大寛之
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信越化學工業股份有限公司
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Abstract

本發明係一種太陽電池之製造方法，其係具有下列步驟：於半導體基板之第1主表面形成第1電極的步驟，及以覆蓋前述第1電極之至少一部分的方式塗佈絕緣膜前驅物的步驟，及使前述絕緣膜前驅物暫硬化的步驟，及於至少前述絕緣膜前驅物上，以與前述第1電極電絕緣的方式塗佈導電性糊料的步驟，及使前述導電性糊料硬化來作為第2電極的步驟，以及使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟，將前述導電性糊料以與前述第1電極電絕緣的方式進行塗佈的步驟係在使前述絕緣膜前驅物暫硬化的步驟之後進行，使前述導電性糊料硬化來作為第2電極的步驟之至少一部分與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。藉此，可提供生產性高，且具有高光電轉換特性的太陽電池之製造方法。

Description

高效率太陽電池之製造方法
本發明係關於高效率太陽電池之製造方法。
作為提昇結晶矽太陽電池之光電轉換效率的手法，近年來，廢除受光面之電極來消除因電極的陰影導致之光學損失之所謂背面電極型太陽電池被廣泛探討。
第1圖係顯示背面電極型太陽電池之背面的一例之示意圖，又，第2圖係顯示第1圖之一點鏈線A之剖面者。如第1圖所示般，於太陽電池100中，於半導體基板(例如結晶矽基板)110之背面(第1主表面)形成有射極區域(射極層)112。又，挾持射極區域112，以條紋狀形成基極區域(基極層)113，於射極區域112上形成射極電極122，進而，複數個射極電極122係以射極匯流排(射極用匯流排電極)132作連結。又，於基極區域113上形成基極電極123，複數個基極電極123係以基極匯流排(基極用匯流排電極)133作連結。另一方面，基極電極123與射極區域112、以及射極電極122與基極區域113係以絕緣膜118作電絕緣。又，如第2圖所示般，太陽電池100係於半導體基板110之第1主表面及第 2主表面上具備鈍化膜119。另外，於第1圖中係省略鈍化膜119。
上述構造，一般而言係藉由形成射極電極122與基極電極123之後，將樹脂塗佈劑藉由網版印刷或噴墨印刷、或者分配塗佈來對基板上之特定部位進行塗佈，並藉由熱處理或UV照射而使其完全硬化，之後，將以銀、銅、鋁等之導電體作為主成分的樹脂硬化型導電性糊料藉由網版印刷或噴墨印刷、或者分配塗佈來對基板上之特定部位進行塗佈，並以熱處理進行硬化而形成。
於專利文獻1中係記載有於絕緣膜使用聚醯亞胺組成物，藉由140℃、10分鐘之加熱與250℃、約30分鐘之加熱，將絕緣膜硬化之後，於其上印刷銀糊料，並藉由以400℃以上、30秒之燒成而形成電極的方法。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2012-69594號公報
然而，如專利文獻1般，若在使絕緣膜充分硬化之後進一步層合熱硬化型電極來進行熱處理，則有不僅僅熱處理會耗費長時間，而使生產性明顯降低，也會對絕緣膜施加過剩的熱量而使韌性降低，或是絕緣膜收縮而 無法得到充分的絕緣性能之問題。
本發明係鑑於上述問題點而完成者，其目的為，提供生產性高，且具有高光電轉換特性的太陽電池之製造方法。
為了達成上述目的，於本發明中係提供一種太陽電池之製造方法，其特徵為，具有下列步驟：於半導體基板之第1主表面形成第1電極的步驟、及以覆蓋前述第1電極之至少一部分的方式塗佈絕緣膜前驅物的步驟、及使前述絕緣膜前驅物暫硬化的步驟、及於至少前述絕緣膜前驅物上，以與前述第1電極電絕緣的方式塗佈導電性糊料的步驟、及使前述導電性糊料硬化來作為第2電極的步驟、以及使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟，將前述導電性糊料以與前述第1電極電絕緣的方式進行塗佈的步驟係在使前述絕緣膜前驅物暫硬化的步驟之後進行，使前述導電性糊料硬化來作為第2電極的步驟之至少一部分與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。
依據如此之方法，可製造生產性高，且具有高光電轉換特性的太陽電池。
又，較佳係，使前述導電性糊料硬化來作為第2電極的步驟全體與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟全體同時進行。
依據如此之方法，可將在絕緣膜前驅物之正式硬化時施加於絕緣膜前驅物的熱量設為更適當者。
又，較佳係，將前述絕緣膜設為含有由聚矽氧樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、氟樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、聚胺基甲酸酯、環氧樹脂、丙烯酸樹脂、聚酯樹脂及聚乙烯醇(PVA)樹脂中所選出的1種以上之樹脂者。
此等之樹脂係由於化學性安定且可使用溫度為高，圖型形成為容易，因此，於本發明之方法中，絕緣膜係以含有此等之樹脂為佳。
又，較佳係將前述導電性糊料設為含有由環氧樹脂、丙烯酸樹脂、聚酯樹脂、酚樹脂及聚矽氧樹脂中選出的1種以上之樹脂者。
此等之樹脂係由於化學性安定且可使用溫度為高，圖型形成為容易，因此，於本發明之方法中，導電性糊料係以含有此等之樹脂為佳。
又，較佳係將前述半導體基板設為結晶矽基板。
本發明係特別適於具備結晶矽基板之太陽電池的製造。
依據本發明之方法，可以簡易的步驟得到高光電轉換效率之太陽電池。尤其，藉由將導電性糊料之硬化與絕緣膜前驅物之正式硬化同時進行，而可縮短此等之材料的硬化所需要的時間之合計。又，在進行該同時硬化的情況，相較於在使絕緣膜充分硬化之後形成第2電極之以往的方法，其係可將對絕緣膜前驅物所施加之熱設為更適當者，而可維持所得之絕緣膜的韌性。如此般，本發明之方法，相較於以往之方法，其係由於不易對絕緣膜前驅物施加過剩的熱量，因此可防止絕緣膜收縮而無法得到充分的絕緣性能之問題。
100‧‧‧太陽電池
110‧‧‧半導體基板
112‧‧‧射極區域
113‧‧‧基極區域
118‧‧‧絕緣膜
122‧‧‧射極電極
123‧‧‧基極電極
132‧‧‧射極匯流排
133‧‧‧基極匯流排
119‧‧‧鈍化膜
300‧‧‧射極穿透式背電極型太陽電池
[第1圖]係顯示背面電極型太陽電池之背面構造的圖。
[第2圖]係顯示背面電極型太陽電池之剖面構造的圖。
[第3圖]係顯示本發明之另一形態之背面電極型太陽電池之背面構造的圖。
[第4圖]係顯示本發明之另一形態之背面電極型太陽電池之剖面構造的圖。
[第5圖]係顯示本發明之另一形態之背面電極型太陽電池之不同位置的剖面構造的圖。
以下，對於本發明進行詳細地說明。
如上述般，要求生產性高，且具有高光電轉換特性的太陽電池之製造方法。
本發明者們為了達成上述目的而進行努力探討。其結果，發現一種太陽電池之製造方法可解決上述課題，因而完成本發明，該太陽電池之製造方法，其特徵為，具有下列步驟：於半導體基板之第1主表面形成第1電極的步驟、及以覆蓋前述第1電極之至少一部分的方式塗佈絕緣膜前驅物的步驟、及使前述絕緣膜前驅物暫硬化的步驟、及於至少前述絕緣膜前驅物上，以與前述第1電極電絕緣的方式塗佈導電性糊料的步驟、及使前述導電性糊料硬化來作為第2電極的步驟、以及使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟，將前述導電性糊料以與前述第1電極電絕緣的方式進行塗佈的步驟係在使前述絕緣膜前驅物暫硬化的步驟之後進行，使前述導電性糊料硬化來作為第2電極的步驟之至少一部分與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。
以下，雖針對本發明之實施形態，參照附圖 來更具體地說明，但本發明並不限定於此等。
本發明之太陽電池之製造方法係適用於第1圖、第2圖所示之太陽電池。以下，以N型基板的情況為例使用第1圖、第2圖來說明具體的本發明之太陽電池製造方法。
首先，準備N型結晶矽基板等之N型半導體基板。具體而言，可準備於高純度矽中摻雜如磷、砷、或銻般之5價元素，並將比電阻設為0.1~5Ω．cm之原切割單結晶{100}N型矽基板。
接著，為了使太陽電池之反射率降低，可於半導體基板之受光面進行被稱為紋理(texture)之微小的凹凸之形成。
接著，如第1圖、第2圖所示般，於半導體基板110的背面(第1主表面)，形成與半導體基板110相反之導電型的射極區域112及與半導體基板110相同之導電型的基極區域113。射極區域112及基極區域113之形成方法並無特別限定，可使用以往周知的方法。例如，射極區域112係可藉由使用有BBr3等之氣相擴散而形成。又，基極區域113係可藉由使用有氧氯化磷(phosphorus oxychloride)之氣相擴散而形成。又，在形成射極區域112及基極區域113時係可藉由使用由氧化矽膜、氮化矽膜等所構成的擴散遮罩，來形成所期望之形狀的射極區域112及基極區域113。例如，如第1圖所示般，可形成條紋圖樣之基極區域113，並在形成該基極區 域113之部位以外形成射極區域112。
接著，於半導體基板110之受光面及背面形成由氮化矽膜、氧化矽膜等所構成的鈍化膜119。氮化矽膜係可藉由CVD法形成，氧化矽膜係可藉由CVD法或熱氧化法形成。
接著，於半導體基板之第1主表面形成第1電極。在第1圖所示之背面構造之太陽電池的情況，於射極區域112與基極區域113上，形成朝水平方向延伸的射極電極122與基極電極123作為第1電極。
第1電極之形成方法雖無特別限制，但就生產性的觀點而言，以導電性糊料之網版印刷或分配形成者為佳。於此情況之射極電極122與基極電極123係藉由將Ag粉末及玻璃粉與有機黏合劑混合而成的Ag糊料，隔著鈍化膜119，塗佈於射極區域112與基極區域113上進行乾燥之後，以1~30分鐘、700~880℃左右的溫度進行燒成而形成。藉由此熱處理，鈍化膜119會被Ag糊料侵蝕，而使電極與矽電接觸。
又，亦可適用電鍍。於此情況中，由於必須使電極形成部位之基板表面露出，因此將該部位之鈍化膜119以例如雷射剝蝕進行去除。
接著，以覆蓋第1電極之至少一部分的方式塗佈絕緣膜前驅物。在製造第1圖所示之背面構造之太陽電池的情況，將絕緣膜前驅物塗佈於射極區域112與基極匯流排133之交叉部位、以及基極區域113與射極匯流排 132之交叉部位。於此情況中，形成為直線狀的第1電極之射極電極122中，僅與基極匯流排133交叉的區域被絕緣膜前驅物所覆蓋。又，形成為直線狀的第1電極之基極電極123中，僅與射極匯流排132交叉的區域被絕緣膜前驅物所覆蓋。絕緣膜前驅物係經過後述之暫硬化及正式硬化而成為絕緣膜。
對於絕緣膜係要求化學性安定且可使用溫度為高，或圖型形成為容易之特性，因此，可使用以聚矽氧樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、氟樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、聚胺基甲酸酯、環氧樹脂、丙烯酸樹脂、聚酯樹脂及聚乙烯醇(PVA)樹脂作為主成分之樹脂。此等之樹脂係可1種單獨或將2種以上組合使用。
又，關於絕緣膜前驅物之形成方法雖無特別限制，但就生產性的觀點而言，以使用上述樹脂或將上述樹脂之原料以溶劑等製成糊料狀的前驅物，並將其進行網版印刷或分配形成者為佳。溶劑係可因應於絕緣膜中所包含之樹脂而適當選擇。例如，在形成包含聚醯亞胺樹脂之絕緣膜情況，可使用N-甲基-2-吡咯啶酮等。
接著，使絕緣膜前驅物暫硬化。具體而言，在印刷作為絕緣膜前驅物之糊料之後，在大氣中，進行低溫之熱處理，而使絕緣膜前驅物暫硬化。在此，暫硬化係指在使絕緣膜前驅物之溶劑揮發、乾燥的同時，進行在之後的步驟中絕緣膜前驅物不受到塑性變形之程度的硬化。
此時之熱處理條件係應依據所使用之絕緣膜前驅物而被最適化，但大多以約80℃至200℃左右，較佳為120℃至200℃左右進行1分鐘至10分鐘左右之熱處理即為充分。若熱量不充分，亦即在此時點未達成暫硬化，則在之後的步驟中將電極進行層合時，絕緣膜前驅物會變形而局部性變薄，而變得容易發生短路。相反地，若在此時點施加較多的熱量而使絕緣膜前驅物正式硬化，則在之後的步驟中使電極硬化時，會對絕緣膜前驅物施加過剩的熱量，使絕緣膜前驅物收縮而局部性變薄，而變得容易發生短路。
如上述般，在使絕緣膜前驅物暫硬化之後，於至少絕緣膜前驅物上，以與第1電極電絕緣的方式塗佈導電性糊料。該導電性糊料係用以形成第2電極者。亦即，依據本發明，可將第1電極與第2電極藉由絕緣膜來電絕緣。在此，在第1電極為射極電極122的情況，作為第2電極係可列舉基極匯流排133。又，在第1電極為基極電極123的情況，作為第2電極係可列舉射極匯流排132。亦即，如第1圖所示般，可僅將不同之導電型用的第1電極與第2電極藉由絕緣膜而電絕緣，而相同之導電型用的第1電極與第2電極係電導通。
第2電極(射極匯流排132與基極匯流排133)係要求化學性安定且所能使用的溫度為高，或圖型形成為容易之特性，因此，以將銀、銅或鋁之粉末與環氧樹脂、丙烯酸樹脂、聚酯樹脂、酚樹脂、或聚矽氧樹脂混合而製成糊料狀，並將其進行網版印刷或分配形成者為佳。此等之樹脂係可1種單獨或將2種以上組合使用。
於此情況中，為了在印刷糊料之後使溶劑揮發，使塗佈膜乾燥，以在大氣中進行低溫之熱處理者為佳。此乾燥步驟在防止塗膜之平坦上係為重要。熱處理條件雖應依所使用之絕緣膜前驅物而被最適化，但以約80℃至200℃左右進行1分鐘至3分鐘左右之熱處理，使溶劑揮發、乾燥。此時之熱處理係可以加熱板進行葉片處理，亦可使用輸帶爐或移動樑爐。
接著，使導電性糊料硬化來作為第2電極。又，使絕緣膜前驅物正式硬化來作為絕緣膜。於本發明中，使導電性糊料硬化來作為第2電極的步驟之至少一部分與使絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。具體而言，將基板在200℃至400℃之大氣中進行10秒至5分鐘左右熱處理，並同時進行絕緣膜前驅物之正式硬化與用以形成匯流排的導電性糊料之硬化。若為200℃以上，則可得到充分的硬化與接著強度，又，若為400℃以下，則可將施加於樹脂的熱設為更適當者，而可維持所得之絕緣膜的韌性。此時之熱處理係適宜使用輸帶爐或移動樑爐等之在線裝置。
在此，在第2電極之硬化溫度高於絕緣膜前驅物之正式硬化溫度的情況，在到達第2電極之硬化溫度之前，開始絕緣膜前驅物之正式硬化。於此情況中，使導電性糊料硬化來作為第2電極的步驟之一部分與使絕緣膜 前驅物正式硬化來作為絕緣膜的步驟之一部分係同時進行。另一方面，在第2電極之硬化溫度與絕緣膜前驅物之正式硬化溫度相同的情況，可同時進行使導電性糊料硬化來作為第2電極的步驟全體與使絕緣膜前驅物正式硬化來作為絕緣膜的步驟全體。於後者的情況中，可將在絕緣膜前驅物之正式硬化時施加於絕緣膜前驅物的熱量設為更適當者。
以上，雖以基板為N型的情況為例進行說明，但在基板為P型的情況本發明之方法亦可適用。亦即，只要設置N型層作為射極層，並設置P型層作為基極層即可。
本發明之方法係可適用於第3圖~第5圖所示之太陽電池。第3圖係顯示作為使用本發明之另一形態的太陽電池之射極穿透式背電極(emitter wrap-through)型太陽電池300之背面的圖，第4圖與第5圖係顯示第3圖中之一點鏈線A及B的剖面者。另外，第4圖、第5圖係使受光面朝下。
於此形態中，半導體基板110之背面的大部分係被基極區域113與形成於該基極區域113上的基極電極123所佔據，射極區域112係以島狀形成在絕緣膜118所挾持的區域。另一方面，受光面係射極區域112所佔據，經由開設於半導體基板110的貫通孔而通往背面之射極區域112。又，射極電極122亦與受光面在背面經由貫通孔而連接。於受光面上係形成有鈍化膜119。又，於半 導體基板110之背面的基極電極123上係直線狀形成有基極匯流排133。又，於半導體基板110之背面的射極區域112及射極電極122上係直線狀形成有射極匯流排132。但，如第5圖所示般，在作為第2電極之射極匯流排132與作為第1電極之基極電極123交叉的區域中，基極電極123係以絕緣膜118所覆蓋。
[實施例]
以下，雖顯示實施例及比較例來更具體地說明本發明，但本發明並不限定於下述之實施例。
(實施例1)
使用本發明之方法來進行第1圖、第2圖所示之太陽電池的製作。
於150mm平方、厚度200μm及比電阻1Ω．cm之磷摻雜<100>n型原切割矽基板中，於基板之背面形成射極區域與基極區域。
將此基板在900℃之氧環境進行10分鐘熱處理，於基板的兩面形成氧化矽膜。接著，於基板兩面進一步藉由電漿CVD，形成膜厚90nm之氮化矽膜。
其後，於上述射極區域與基極型區域，藉由網版印刷塗佈Ag糊料，並進行800℃、3秒之熱處理，使Ag糊料硬化，而形成射極電極與基極電極。
接著，藉由網版印刷，將聚醯亞胺糊料(日 立化成製HP-1000)塗佈於特定的部位，在120℃之加熱板上進行3分鐘熱處理，使其暫硬化。
接著，藉由網版印刷，於基板之背面塗佈熱硬化型Ag糊料(大研化學工業製CA-8590B)，並在170℃之加熱板上進行1分鐘乾燥後以300℃進行5分鐘熱處理。另外，在將熱硬化型Ag糊料進行塗佈時，將射極匯流排用之熱硬化型Ag糊料以與基極電極電絕緣的方式進行塗佈，並將基極匯流排用之熱硬化型Ag糊料以與射極電極電絕緣的方式進行塗佈(參照第1圖)。藉由上述之熱處理，而使聚醯亞胺糊料與熱硬化型Ag糊料同時硬化。亦即，使熱硬化型Ag糊料硬化來作為射極匯流排及基極匯流排的步驟之至少一部分、與使聚醯亞胺糊料正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。以如此方式得到太陽電池單元。
使用氙氣燈光源式之人造太陽光來測定所製作之太陽電池的輸出特性。
(實施例2)
使用與實施例1相同的基板，藉由相同之太陽電池製造步驟來進行直到射極電極與基極電極之形成為止。
接著，藉由網版印刷，將環氧糊料(信越化學工業製SFX513M1LC)塗佈於特定的部位，在170℃之加熱板上進行1分鐘熱處理，使其暫硬化。
以與實施例1相同方式進行之後的步驟，而得到太陽電池單元。
使用氙氣燈光源式之人造太陽光來測定所製作之太陽電池的輸出特性。
(比較例1)
使用與實施例1相同的基板，藉由相同之太陽電池製造步驟來進行直到射極電極與基極電極之形成為止。
接著，藉由網版印刷，將聚醯亞胺糊料(日立化成製HP-1000)塗佈於特定的部位，在100℃之加熱板上進行3分鐘熱處理，使其乾燥。此時，聚醯亞胺糊料並未被暫硬化。
以與實施例1相同方式進行之後的步驟，而得到太陽電池單元。
使用氙氣燈光源式之人造太陽光來測定所製作之太陽電池的輸出特性。
(比較例2)
使用與實施例1相同的基板，藉由相同之太陽電池製造步驟來進行直到射極電極與基極電極之形成為止。
接著，藉由網版印刷，將聚醯亞胺糊料(日立化成製HP-1000)塗佈於特定的部位，在100℃之加熱板上進行3分鐘熱處理，使其乾燥後，在200℃之加熱板上進行1小時熱處理，使其硬化。亦即，在塗佈射極匯流排與基極匯流排形成用之熱硬化型Ag糊料之前，使聚醯 亞胺糊料正式硬化。
以與實施例1相同方式進行之後的步驟，而得到太陽電池單元。
使用氙氣燈光源式之人造太陽光來測定所製作之太陽電池的輸出特性。
表1顯示實施例1、2及比較例1、2之太陽電池特性。
如表1所示般，實施例1及2係顯示高於比較例1(將導電性糊料以與第1電極電絕緣的方式塗佈的步驟，並非在使絕緣膜前驅物暫硬化的步驟之後進行的例子)及比較例2(使導電性糊料硬化來作為第2電極的步驟之至少一部分與使絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分並非同時進行的例子)之太陽電池特性，顯示出藉由本發明，可以簡易的步驟實現高效率之太陽電池。
另外，本發明並不限定於上述實施形態。上述實施形態係為例示，具有與本發明之申請專利範圍所記 載的技術性思想實質上相同的構成，發揮相同的作用效果者係任何者皆包含於本發明之技術性範圍中。

Claims (7)

  1. 一種太陽電池之製造方法，其特徵為，具有下列步驟：於半導體基板之第1主表面形成第1電極的步驟，及以覆蓋前述第1電極之至少一部分的方式塗佈絕緣膜前驅物的步驟，及使前述絕緣膜前驅物暫硬化的步驟，及於至少前述絕緣膜前驅物上，以與前述第1電極電絕緣的方式塗佈導電性糊料的步驟，及使前述導電性糊料硬化來作為第2電極的步驟，以及使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟，將前述導電性糊料以與前述第1電極電絕緣的方式進行塗佈的步驟係在使前述絕緣膜前驅物暫硬化的步驟之後進行，使前述導電性糊料硬化來作為第2電極的步驟之至少一部分與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟之至少一部分係同時進行。
  2. 如請求項1之太陽電池之製造方法，其中，使前述導電性糊料硬化來作為第2電極的步驟全體係與使前述絕緣膜前驅物正式硬化來作為絕緣膜的步驟全體同時進行。
  3. 如請求項1之太陽電池之製造方法，其係將前述絕緣 膜設為含有由聚矽氧樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、氟樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、聚胺基甲酸酯、環氧樹脂、丙烯酸樹脂、聚酯樹脂及聚乙烯醇(PVA)樹脂中所選出的1種以上之樹脂者。
  4. 如請求項2之太陽電池之製造方法，其係將前述絕緣膜設為含有由聚矽氧樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、氟樹脂、酚樹脂、三聚氰胺樹脂、脲樹脂、聚胺基甲酸酯、環氧樹脂、丙烯酸樹脂、聚酯樹脂及聚乙烯醇(PVA)樹脂中所選出的1種以上之樹脂者。
  5. 如請求項1至4中任一項之太陽電池之製造方法，其係將前述導電性糊料設為含有由環氧樹脂、丙烯酸樹脂、聚酯樹脂、酚樹脂及聚矽氧樹脂中所選出的1種以上之樹脂者。
  6. 如請求項1至4中任一項之太陽電池之製造方法，其係將前述半導體基板設為結晶矽基板。
  7. 如請求項5之太陽電池之製造方法，其係將前述半導體基板設為結晶矽基板。
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