WO2010113813A1 - 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品 - Google Patents
塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品 Download PDFInfo
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- WO2010113813A1 WO2010113813A1 PCT/JP2010/055431 JP2010055431W WO2010113813A1 WO 2010113813 A1 WO2010113813 A1 WO 2010113813A1 JP 2010055431 W JP2010055431 W JP 2010055431W WO 2010113813 A1 WO2010113813 A1 WO 2010113813A1
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- resin composition
- photosensitive resin
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- 239000011342 resin composition Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims description 66
- 239000000463 material Substances 0.000 title claims description 32
- 238000000059 patterning Methods 0.000 title description 9
- 239000000126 substance Substances 0.000 claims abstract description 163
- 239000002243 precursor Substances 0.000 claims abstract description 162
- 229920000642 polymer Polymers 0.000 claims abstract description 130
- 238000010438 heat treatment Methods 0.000 claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 claims abstract description 98
- 239000012467 final product Substances 0.000 claims abstract description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 239000002585 base Substances 0.000 claims description 265
- -1 phosphino group Chemical group 0.000 claims description 142
- 150000001875 compounds Chemical class 0.000 claims description 130
- 125000000962 organic group Chemical group 0.000 claims description 118
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 80
- 125000001424 substituent group Chemical group 0.000 claims description 80
- 239000004642 Polyimide Substances 0.000 claims description 70
- 229920001721 polyimide Polymers 0.000 claims description 70
- 239000011248 coating agent Substances 0.000 claims description 61
- 238000000576 coating method Methods 0.000 claims description 61
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 58
- 125000004122 cyclic group Chemical group 0.000 claims description 44
- 125000006239 protecting group Chemical group 0.000 claims description 44
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 31
- 229920002577 polybenzoxazole Polymers 0.000 claims description 28
- 125000005372 silanol group Chemical group 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 22
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 22
- 125000005328 phosphinyl group Chemical group [PH2](=O)* 0.000 claims description 21
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 claims description 21
- 125000003277 amino group Chemical group 0.000 claims description 19
- 239000000047 product Substances 0.000 claims description 19
- 125000003700 epoxy group Chemical group 0.000 claims description 17
- 229910052736 halogen Inorganic materials 0.000 claims description 17
- 150000002367 halogens Chemical class 0.000 claims description 17
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 17
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 17
- 125000000018 nitroso group Chemical group N(=O)* 0.000 claims description 16
- 125000000213 sulfino group Chemical group [H]OS(*)=O 0.000 claims description 15
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 15
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 claims description 15
- 125000000101 thioether group Chemical group 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 125000005843 halogen group Chemical group 0.000 claims description 13
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 13
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000003973 paint Substances 0.000 claims description 8
- 125000000656 azaniumyl group Chemical group [H][N+]([H])([H])[*] 0.000 claims description 7
- 239000004566 building material Substances 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000000565 sealant Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 125000003566 oxetanyl group Chemical group 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 125000001730 thiiranyl group Chemical group 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000003637 basic solution Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 30
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 102
- 238000004519 manufacturing process Methods 0.000 description 86
- 238000003786 synthesis reaction Methods 0.000 description 48
- 230000015572 biosynthetic process Effects 0.000 description 47
- 239000002904 solvent Substances 0.000 description 47
- 125000004432 carbon atom Chemical group C* 0.000 description 45
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 44
- 239000000203 mixture Substances 0.000 description 42
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 36
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 125000003118 aryl group Chemical group 0.000 description 36
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 36
- 229920000647 polyepoxide Polymers 0.000 description 36
- 239000003822 epoxy resin Substances 0.000 description 35
- 229920006395 saturated elastomer Polymers 0.000 description 35
- 239000000243 solution Substances 0.000 description 34
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 33
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 33
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 31
- 150000004985 diamines Chemical class 0.000 description 31
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 29
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 29
- 239000002253 acid Substances 0.000 description 25
- 125000001183 hydrocarbyl group Chemical group 0.000 description 24
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 23
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 22
- 229910052799 carbon Inorganic materials 0.000 description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 21
- 125000005842 heteroatom Chemical group 0.000 description 21
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 20
- 125000001931 aliphatic group Chemical group 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- WZUODJNEIXSNEU-UHFFFAOYSA-N 2-Hydroxy-4-methoxybenzaldehyde Chemical compound COC1=CC=C(C=O)C(O)=C1 WZUODJNEIXSNEU-UHFFFAOYSA-N 0.000 description 18
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 18
- 238000010511 deprotection reaction Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 17
- 125000000217 alkyl group Chemical group 0.000 description 17
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 15
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 15
- 235000019341 magnesium sulphate Nutrition 0.000 description 15
- 229920005575 poly(amic acid) Polymers 0.000 description 15
- 238000010898 silica gel chromatography Methods 0.000 description 15
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 14
- 150000001412 amines Chemical class 0.000 description 14
- 239000007787 solid Substances 0.000 description 14
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 13
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 13
- 125000003545 alkoxy group Chemical group 0.000 description 13
- 229930016911 cinnamic acid Natural products 0.000 description 13
- 235000013985 cinnamic acid Nutrition 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000001723 curing Methods 0.000 description 13
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 12
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 12
- 150000001721 carbon Chemical group 0.000 description 12
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 229930195733 hydrocarbon Natural products 0.000 description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 239000011259 mixed solution Substances 0.000 description 12
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 11
- LMDZBCPBFSXMTL-UHFFFAOYSA-N 1-Ethyl-3-(3-dimethylaminopropyl)carbodiimide Substances CCN=C=NCCCN(C)C LMDZBCPBFSXMTL-UHFFFAOYSA-N 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 125000004093 cyano group Chemical group *C#N 0.000 description 11
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 10
- 230000009471 action Effects 0.000 description 10
- 230000003197 catalytic effect Effects 0.000 description 10
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 10
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 10
- 229910052753 mercury Inorganic materials 0.000 description 10
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- WGPCXUHHAIEMGI-UHFFFAOYSA-N 3-(2-hydroxyphenyl)prop-2-enamide Chemical compound NC(=O)C=CC1=CC=CC=C1O WGPCXUHHAIEMGI-UHFFFAOYSA-N 0.000 description 9
- FPQQSJJWHUJYPU-UHFFFAOYSA-N 3-(dimethylamino)propyliminomethylidene-ethylazanium;chloride Chemical compound Cl.CCN=C=NCCCN(C)C FPQQSJJWHUJYPU-UHFFFAOYSA-N 0.000 description 9
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- 230000018109 developmental process Effects 0.000 description 9
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- 238000007363 ring formation reaction Methods 0.000 description 9
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
- 230000009435 amidation Effects 0.000 description 8
- 238000007112 amidation reaction Methods 0.000 description 8
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 8
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 7
- 125000002252 acyl group Chemical group 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 7
- 238000001914 filtration Methods 0.000 description 7
- 125000005647 linker group Chemical group 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 6
- 125000003368 amide group Chemical group 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- 150000002148 esters Chemical group 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000002798 polar solvent Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 6
- 235000017557 sodium bicarbonate Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 5
- 239000002696 acid base indicator Substances 0.000 description 5
- 125000004423 acyloxy group Chemical group 0.000 description 5
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 5
- 150000004982 aromatic amines Chemical class 0.000 description 5
- 125000003710 aryl alkyl group Chemical group 0.000 description 5
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 5
- 150000007942 carboxylates Chemical group 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 125000001651 cyanato group Chemical group [*]OC#N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 239000012948 isocyanate Substances 0.000 description 5
- 150000002513 isocyanates Chemical class 0.000 description 5
- 125000001261 isocyanato group Chemical group *N=C=O 0.000 description 5
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 description 5
- 238000006317 isomerization reaction Methods 0.000 description 5
- 125000001810 isothiocyanato group Chemical group *N=C=S 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 229910000027 potassium carbonate Inorganic materials 0.000 description 5
- 235000011181 potassium carbonates Nutrition 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 229930195734 saturated hydrocarbon Natural products 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 235000011121 sodium hydroxide Nutrition 0.000 description 5
- 125000000858 thiocyanato group Chemical group *SC#N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- DYLIWHYUXAJDOJ-OWOJBTEDSA-N (e)-4-(6-aminopurin-9-yl)but-2-en-1-ol Chemical compound NC1=NC=NC2=C1N=CN2C\C=C\CO DYLIWHYUXAJDOJ-OWOJBTEDSA-N 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 4
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
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- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
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- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
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- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000006233 propoxy propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])OC([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- JREWFSHZWRKNBM-UHFFFAOYSA-N pyridine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CN=C(C(O)=O)C(C(O)=O)=C1C(O)=O JREWFSHZWRKNBM-UHFFFAOYSA-N 0.000 description 1
- PZRKPUQWIFJRKZ-UHFFFAOYSA-N pyrimidine-2,4,5,6-tetramine Chemical compound NC1=NC(N)=C(N)C(N)=N1 PZRKPUQWIFJRKZ-UHFFFAOYSA-N 0.000 description 1
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- 239000011541 reaction mixture Substances 0.000 description 1
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- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- LZOZLBFZGFLFBV-UHFFFAOYSA-N sulfene Chemical compound C=S(=O)=O LZOZLBFZGFLFBV-UHFFFAOYSA-N 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- UXWVQHXKKOGTSY-UHFFFAOYSA-N tert-butyl phenyl carbonate Chemical compound CC(C)(C)OC(=O)OC1=CC=CC=C1 UXWVQHXKKOGTSY-UHFFFAOYSA-N 0.000 description 1
- MHYGQXWCZAYSLJ-UHFFFAOYSA-N tert-butyl-chloro-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](Cl)(C(C)(C)C)C1=CC=CC=C1 MHYGQXWCZAYSLJ-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- BCNZYOJHNLTNEZ-UHFFFAOYSA-N tert-butyldimethylsilyl chloride Chemical compound CC(C)(C)[Si](C)(C)Cl BCNZYOJHNLTNEZ-UHFFFAOYSA-N 0.000 description 1
- 125000001981 tert-butyldimethylsilyl group Chemical group [H]C([H])([H])[Si]([H])(C([H])([H])[H])[*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000037 tert-butyldiphenylsilyl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1[Si]([H])([*]C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical group 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 150000003553 thiiranes Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- OKYDCMQQLGECPI-UHFFFAOYSA-N thiopyrylium Chemical class C1=CC=[S+]C=C1 OKYDCMQQLGECPI-UHFFFAOYSA-N 0.000 description 1
- 150000005075 thioxanthenes Chemical class 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- KVENDAGPVNAYLY-UHFFFAOYSA-N tribromo(ethyl)silane Chemical compound CC[Si](Br)(Br)Br KVENDAGPVNAYLY-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PTUUTGJMRQWABQ-UHFFFAOYSA-N triphenyl(phenylsilyloxy)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)O[SiH2]C1=CC=CC=C1 PTUUTGJMRQWABQ-UHFFFAOYSA-N 0.000 description 1
- IIHPVYJPDKJYOU-UHFFFAOYSA-N triphenylcarbethoxymethylenephosphorane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=CC(=O)OCC)C1=CC=CC=C1 IIHPVYJPDKJYOU-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 125000001834 xanthenyl group Chemical class C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
- C07D295/16—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms acylated on ring nitrogen atoms
- C07D295/18—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms acylated on ring nitrogen atoms by radicals derived from carboxylic acids, or sulfur or nitrogen analogues thereof
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
- C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
- C07D309/08—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D309/10—Oxygen atoms
- C07D309/12—Oxygen atoms only hydrogen atoms and one oxygen atom directly attached to ring carbon atoms, e.g. tetrahydropyranyl ethers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
- C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
- C07D317/44—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D317/46—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with one six-membered ring
- C07D317/48—Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring
- C07D317/62—Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to atoms of the carbocyclic ring
- C07D317/64—Oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/20—Carboxylic acid amides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0037—Production of three-dimensional images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- the present invention relates to a base generator that generates a base upon irradiation and heating of electromagnetic waves, and a photosensitive resin composition using the base generator, and in particular, a product formed through a patterning step or a curing acceleration step using electromagnetic waves.
- a photosensitive resin composition that can be suitably used as a material for a member, a pattern forming material comprising the photosensitive resin composition, a pattern forming method, and an article produced using the resin composition. is there.
- the photosensitive resin composition is used for, for example, an electronic component, an optical product, a molding material of an optical component, a layer forming material or an adhesive, and particularly preferably used for a product or a member formed through a patterning process using electromagnetic waves.
- polyimide which is a polymer material, exhibits top-class performance among organic materials such as heat resistance, dimensional stability, and insulation characteristics, so it is widely applied to insulating materials for electronic components. It has been actively used as a coating film, a base material for flexible printed wiring boards, and the like.
- polybenzoxazole which exhibits low water absorption and low dielectric constant, to which processing steps similar to polyimide are applied, and polybenzimidazole with excellent adhesion to the substrate, etc. It has been studied energetically.
- polyimide is poorly soluble in a solvent and difficult to process.
- patterning is performed by exposure and development in the state of a polyimide precursor having excellent solvent solubility, and then heat treatment. For example, there is a method of obtaining a polyimide pattern by imidization by the method described above.
- a method of forming a pattern by providing a photosensitive resin as a resist layer on a polyimide precursor and (2) bonding or coordination of a photosensitive site to the polyimide precursor itself.
- a method of forming a pattern by its action Alternatively, a method in which a photosensitive component is mixed with a polyimide precursor to form a resin composition, and a pattern is formed by the action of the photosensitive component.
- a polyimide precursor polyamic acid acts as a dissolution inhibitor before exposure to electromagnetic waves, and after exposure, a carboxylic acid is formed to form a dissolution accelerator;
- the naphthoquinonediazide derivative is mixed, and pattern formation is performed by increasing the contrast of the dissolution rate of the exposed area and unexposed area to the developer, followed by imidization to obtain a polyimide pattern
- Patent Document 1 A methacryloyl group is introduced into the polyimide precursor via an ester bond or an ionic bond, a photo radical generator is added thereto, and the exposed area is crosslinked to dissolve the exposed and unexposed areas in the developer. The pattern is formed by increasing the contrast of the speed, and then imidization is performed to obtain a polyimide pattern. Etc. have been put into practical use (Patent Document 2).
- the method (2) does not require a resist layer and can greatly simplify the process.
- a naphthoquinonediazide derivative is used to increase the solubility contrast.
- the amount of addition is increased, there is a problem that the original physical properties of the polyimide cannot be obtained.
- the method (ii) has a problem that the structure of the polyimide precursor is restricted.
- a polyamic acid as a polyimide precursor is mixed with a photobase generator and heated after exposure to cause cyclization to proceed by the action of a base generated by exposure.
- a technique for obtaining a polyimide pattern by reducing the solubility, forming a pattern by increasing the contrast of the dissolution rate in the developing solution of the exposed part and the unexposed part, and then imidizing is reported ( Patent Document 3).
- photosensitive resin composition using the photobase generator examples include an epoxy compound (for example, Patent Document 4).
- an epoxy compound for example, Patent Document 4
- amines are generated in the layer containing the epoxy compound, so that the amines act as an initiator or a catalyst, and the epoxy compound can be cured only in the exposed area. Pattern formation can be performed.
- a photosensitive resin composition using a photobase generator is a resin composition because a photosensitive polymer precursor can be obtained simply by mixing a photobase generator at a certain ratio with an existing polymer precursor.
- the process for manufacturing is simple.
- a polyimide precursor in which the structure of a precursor compound used in the past is restricted has an advantage of high versatility because it can be applied to polyimide precursors having various structures.
- conventional photobase generators have low sensitivity, there has been a problem that the amount of electromagnetic wave irradiation increases. When the amount of electromagnetic wave irradiation increases, there is also a problem that the processing amount (throughput) per unit time decreases.
- compatibility with the polymer precursor or the like it is desired to improve the compatibility with the polymer precursor or the like in accordance with the structure of the polymer precursor or the like so that it can be applied to more polymer precursors and compounds. If the compatibility with the polymer precursor or the like is high, for example, it is possible to form a varnish by compatibility with the polymer precursor or the like without using a solvent.
- the phenolic hydroxyl group may react with the epoxy group by heating at 100 ° C. or higher, and there is a possibility that it reacts even in an unirradiated part. Therefore, for example, it may not be preferable to coexist with a polymer precursor in the state of a phenolic hydroxyl group such as a photosensitive resin composition containing a polymer precursor having an epoxy.
- the present invention has been made in view of the above circumstances, and its main purpose is excellent in sensitivity, a base generator having a wide range of application of the compound to be combined, and excellent in sensitivity, regardless of the type of polymer precursor, It is providing the photosensitive resin composition which can obtain a pattern with a favorable shape.
- the base generator according to the present invention is represented by the following chemical formula (1) and is characterized by generating a base upon irradiation with electromagnetic waves and heating.
- R 1 and R 2 are each independently hydrogen or an organic group and may be the same or different.
- R 1 and R 2 are bonded to form a cyclic structure. And may contain a heteroatom bond, provided that at least one of R 1 and R 2 is an organic group
- R 3 and R 4 are each independently hydrogen, halogen, Hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonate group, phosphino group, phosphinyl group, phosphono group, phosphonate group, or organic group, which are the same be different even good .
- R 5, R 6, R 7 and R 8 are each independently hydrogen, halogen, a hydroxyl group, a mercapto group, a sulfide group, a silyl group, a silanol group, a nitro group, two Nitroso group,
- examples of R 9 of the deprotectable protecting group include silyl group, silanol group, phosphino group, phosphinyl group, phosphono group, and monovalent organic group.
- R 9 is one or more selected from the group consisting of organic groups represented by the following formulas (2-1) to (2-6). Is preferable because it is easy and can be deprotected by heating and / or irradiation with electromagnetic waves.
- R 10 , R 11 and R 12 are each independently hydrogen, a halogen atom, or an organic group
- R 13 is an organic group
- R 14 is an organic group
- R 15 , R 16 , and R 17 are each bonded to each other to represent a cyclic structure.
- R 20 is an organic group.
- the photosensitive resin composition according to the present invention relates to a polymer precursor whose reaction to the final product is accelerated by heating with a basic substance or in the presence of the basic substance, and the above-described present invention. It contains a base generator.
- the present invention also provides a pattern forming material comprising the photosensitive resin composition according to the present invention.
- this invention provides the pattern formation method using the said photosensitive resin composition.
- a coating film or a molded body is formed using the photosensitive resin composition, the coating film or the molded body is irradiated with electromagnetic waves in a predetermined pattern, and after irradiation or simultaneously with irradiation. It develops, after heating and changing the solubility of the said irradiation site
- a coating film or a molded body made of a photosensitive resin composition is used by combining a polymer precursor and a compound represented by the above formula (1) as a base generator.
- a pattern for performing development can be formed without using a resist film for protecting the surface from the developer.
- the present invention also provides a printed material, a paint, a sealant, an adhesive, a display device, a semiconductor device, an electronic component, a microelectromechanical system, light, which is at least partly formed of the photosensitive resin composition or a cured product thereof.
- a printed material a paint, a sealant, an adhesive, a display device, a semiconductor device, an electronic component, a microelectromechanical system, light, which is at least partly formed of the photosensitive resin composition or a cured product thereof.
- Articles of either shaped objects, optical members or building materials are also provided.
- the base generator of the present invention has a structure represented by the formula (1), a base is generated by irradiation with electromagnetic waves, and further generation of the base is promoted by heating. It has excellent sensitivity compared to the generator.
- a compound to be combined such as a polymer precursor or an acid-base indicator
- the range of compounds that can be combined is increased, and the range of application methods of base generators is expanded.
- it can be utilized in combination with various polymer precursors.
- the photosensitive resin composition of the present invention since the base generator represented by the formula (1) included has superior sensitivity compared to the conventionally used photobase generator, the photosensitive resin is highly sensitive. It is a composition.
- the photosensitive resin composition of the present invention can obtain a pattern having a good shape due to a change in solubility of a polymer precursor by a base derived from a base generator by irradiation with electromagnetic waves and heating. Furthermore, in the photosensitive resin composition of the present invention, unlike an acid, a base does not cause metal corrosion, so that a more reliable cured film can be obtained.
- the pattern forming step includes a heating step, the photosensitive resin composition of the present invention can use the heating step in heating that promotes the generation of a base.
- the photosensitive resin composition of the present invention can be streamlined compared to a conventional resin composition that generates a base only by electromagnetic wave irradiation.
- (meth) acryloyl means acryloyl and / or methacryloyl
- (meth) acryl means acryl and / or methacryl
- (meth) acrylate means acrylate and / or methacrylate.
- the electromagnetic wave is not only an electromagnetic wave having a wavelength in the visible and invisible regions, but also a particle beam such as an electron beam, and radiation or a general term for the electromagnetic wave and the particle beam, unless the wavelength is specified. Contains ionizing radiation. In this specification, irradiation with electromagnetic waves is also referred to as exposure.
- the base generator according to the present invention is represented by the following chemical formula (1) and is characterized by generating a base by irradiation with electromagnetic waves and heating.
- R 1 and R 2 are each independently hydrogen or an organic group and may be the same or different.
- R 1 and R 2 are bonded to form a cyclic structure. And may contain a heteroatom bond, provided that at least one of R 1 and R 2 is an organic group
- R 3 and R 4 are each independently hydrogen, halogen, Hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonate group, phosphino group, phosphinyl group, phosphono group, phosphonate group, or organic group, which are the same be different even good .
- R 5, R 6, R 7 and R 8 are each independently hydrogen, halogen, a hydroxyl group, a mercapto group, a sulfide group, a silyl group, a silanol group, a nitro group, two Nitroso group,
- the base generator of the present invention is a kind of photobase generator and generates a base only by being irradiated with electromagnetic waves. However, generation of a base is promoted by appropriate heating.
- the base generator of the present invention can efficiently generate a base with a small amount of electromagnetic wave irradiation by combining electromagnetic wave irradiation and heating, and has a higher sensitivity than conventional so-called photobase generators. Have.
- a protecting group that can be deprotected by heating and / or irradiation with an electromagnetic wave
- a compound to be combined such as a polymer precursor or an acid-base indicator
- the range of compounds that can be combined is increased, and the range of application methods of base generators is expanded.
- a polymer precursor that is not preferably coexisting with a phenolic hydroxyl group can be used in the resin composition.
- the base generator according to the present invention has the above-mentioned specific structure, as shown by the following formula, ( ⁇ CR 4 ⁇ CR 3 —C ( ⁇ O) in the formula (1) when irradiated with electromagnetic waves.
- The)-) moiety isomerizes from the trans isomer to the cis isomer, and the protecting group R 9 is further deprotected and cyclized by heating and / or irradiation with electromagnetic waves to generate a base (NHR 1 R 2 ).
- the temperature at which the reaction when the polymer precursor becomes the final product is lowered, or the curing reaction where the polymer precursor becomes the final product can be started.
- R 1 and R 2 are each independently a hydrogen atom or an organic group, but at least one of R 1 and R 2 is an organic group. Further, NHR 1 R 2 is a base, but R 1 and R 2 are each preferably an organic group not containing an amino group. If an amino group is contained in R 1 and R 2 , the base generator itself becomes a basic substance, which accelerates the reaction of the polymer precursor, resulting in a solubility contrast between the exposed and unexposed areas. There is a risk of the difference becoming smaller. However, when there is a difference in basicity between the electromagnetic wave irradiation and the base generated after heating, such as when an amino group is bonded to the aromatic ring present in the organic group of R 1 and R 2.
- the organic group of R 1 and R 2 contains an amino group.
- the organic group include a saturated or unsaturated alkyl group, a saturated or unsaturated cycloalkyl group, an aryl group, an aralkyl group, and a saturated or unsaturated halogenated alkyl group. These organic groups may contain bonds and substituents other than hydrocarbon groups such as heteroatoms in the organic group, and these may be linear or branched.
- the organic group in R 1 and R 2 is usually a monovalent organic group, but in the case of forming a cyclic structure described later, the generated NHR 1 R 2 is an NH group capable of forming an amide bond such as diamine. In the case of a basic substance having two or more, it can be a divalent or higher organic group.
- R 1 and R 2 may be bonded to form a cyclic structure.
- the cyclic structure is a combination of two or more selected from the group consisting of saturated or unsaturated alicyclic hydrocarbons, heterocycles, and condensed rings, and the alicyclic hydrocarbons, heterocycles, and condensed rings. The structure which becomes may be sufficient.
- the bond other than the hydrocarbon group in the organic group of R 1 and R 2 is not particularly limited as long as the effect of the present invention is not impaired, and is an ether bond, a thioether bond, a carbonyl bond, a thiocarbonyl bond, an ester bond.
- the substituent other than the hydrocarbon group in the organic group of R 1 and R 2 is not particularly limited as long as the effects of the present invention are not impaired.
- the hydrogen contained in the substituent may be substituted with a hydrocarbon group.
- the hydrocarbon group contained in the substituent may be any of linear, branched, and cyclic.
- the substituent other than the hydrocarbon group in the organic group of R 1 and R 2 include a halogen atom, a hydroxyl group, a mercapto group, a sulfide group, a cyano group, an isocyano group, a cyanato group, an isocyanato group, a thiocyanato group, an isothiocyanato group, Silyl group, silanol group, alkoxy group, alkoxycarbonyl group, carbamoyl group, thiocarbamoyl group, nitro group, nitroso group, carboxyl group, carboxylate group, acyl group, acyloxy group, sulfino group, sulfo group, sulfonate group, phosphino group , A
- NHR 1 R 2 Since the basic substance to be generated is NHR 1 R 2 , a primary amine, a secondary amine, or a heterocyclic compound is exemplified.
- the amine includes an aliphatic amine and an aromatic amine, respectively.
- the heterocyclic compound here means that NHR 1 R 2 has a cyclic structure and has aromaticity.
- Non-aromatic heterocyclic compounds that are not aromatic heterocyclic compounds are included here in aliphatic amines as alicyclic amines.
- the generated NHR 1 R 2 includes not only a basic substance such as a monoamine having only one NH group capable of forming an amide bond but also 2 NH groups capable of forming an amide bond such as diamine, triamine, and tetraamine. It may be a basic substance having two or more.
- an NH group capable of forming an amide bond is formed at one or more terminals of R 1 and / or R 2 in the formula (1).
- bonded is mentioned.
- a residue other than R 1 and / or R 2 in the formula (1) is further bonded to one or more terminals of R 1 and / or R 2 in the formula (1). Structure.
- Aliphatic primary amines include methylamine, ethylamine, propylamine, isopropylamine, n-butylamine, sec-butylamine, tert-butylamine, pentylamine, isoamylamine, tert-pentylamine, cyclopentylamine, hexylamine, cyclohexylamine , Heptylamine, cycloheptaneamine, octylamine, 2-octaneamine, 2,4,4-trimethylpentan-2-amine, cyclooctylamine and the like.
- aromatic primary amines examples include aniline, 2-aminophenol, 3-aminophenol, and 4-aminophenol.
- Aliphatic secondary amines include dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, ethylmethylamine, aziridine, azetidine, pyrrolidine, piperidine, azepan, azocan, methylaziridine, dimethylaziridine, methylazetidine, dimethyl Examples thereof include azetidine, trimethylazetidine, methylpyrrolidine, dimethylpyrrolidine, trimethylpyrrolidine, tetramethylpyrrolidine, methylpiperidine, dimethylpiperidine, trimethylpiperidine, tetramethylpiperidine, pentamethylpiperidine and the like, among which alicyclic amine is preferable.
- aromatic secondary amines examples include methylaniline, diphenylamine, and N-phenyl-1-naphthylamine.
- aromatic heterocyclic compound having an NH group capable of forming an amide bond includes an imino bond (—N ⁇ C (—R) —, —C ( ⁇ NR) —,
- R preferably has a hydrogen atom or an organic group
- examples thereof include imidazole, purine, triazole, and derivatives thereof.
- amines higher than diamine examples include ethylenediamine, 1,3-propanediamine, 1,4-butanediamine, 1,5-pentanediamine, 1,6-hexanediamine, 1,7-heptanediamine, 1,8-octanediamine, Linear aliphatic alkylenediamines such as 1,9-nonanediamine and 1,10-decanediamine; 1-butyl-1,2-ethanediamine, 1,1-dimethyl-1,4-butanediamine, 1-ethyl- 1,4-butanediamine, 1,2-dimethyl-1,4-butanediamine, 1,3-dimethyl-1,4-butanediamine, 1,4-dimethyl-1,4-butanediamine, 2,3- Branched aliphatic alkylenediamine such as dimethyl-1,4-butanediamine; diethylenetriamine, triethylenetetramine, tetraethylenepentami Polyethylene amines represented by the general formula NH 2 (CH 2 CH 2 NH
- thermophysical properties and basicity of the basic substance to be generated are different. Catalytic action, such as lowering the reaction start temperature for the reaction from the polymer precursor to the final product, is more effective as a catalyst with a basic material having a higher basicity, and a lower temperature with a smaller amount of addition. Reaction to the final product is possible.
- secondary amines have higher basicity than primary amines, and their catalytic effect is greater.
- aliphatic amines are preferred over aromatic amines because they are more basic.
- the base generated in the present invention is a secondary amine and / or a heterocyclic compound
- the organic groups of R 1 and R 2 each independently preferably have 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms, particularly carbon atoms.
- the number is preferably 1 to 8.
- the base generated from the base generator represented by the chemical formula (1) preferably has one NH group capable of forming an amide bond.
- the base generator has two or more amide bonds that are cleaved by irradiation with electromagnetic waves and heating, for example, cinnamic acid derivatives
- photophores such as residues, per molecule.
- the molecular weight is usually increased, there is a problem that the solvent solubility is deteriorated.
- the base generated from the base generator represented by the chemical formula (1) is one having two or more NH groups capable of forming an amide bond. It can be suitably used because it can function not only as a curing agent.
- R 3 and R 4 are independently hydrogen, halogen, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonate group.
- the base generator of the present invention can further improve the solubility in an organic solvent or improve the affinity with a polymer precursor.
- the solubility in an organic solvent is improved.
- the affinity with a polymer precursor containing a halogen such as fluorine is improved.
- R 3 and R 4 when at least one of R 3 and R 4 has a silyl group or a silanol group, the affinity with the polysiloxane precursor is improved.
- R 3 and / or R 4 is combined with a desired organic solvent or polymer precursor, and a substituent is appropriately introduced, so that the solubility in the desired organic solvent and the desired polymer precursor can be reduced. It is possible to improve the affinity.
- the halogen and the organic group are not particularly limited as long as the effects of the present invention are not impaired, and those similar to those listed for R 5 , R 6 , R 7 and R 8 described later can be used.
- the bonds other than the hydrocarbon groups and the substituents other than the hydrocarbon groups in the organic groups of R 3 and R 4 are the same as those described in R 5 , R 6 , R 7 and R 8 described later. Can be used.
- the organic group in R 3 and R 4 is usually a monovalent organic group.
- R 3 and R 4 may be a hydrogen atom, but when having a substituent, at least one of them is an alkyl group having 1 to 20 carbon atoms such as a methyl group, an ethyl group, a propyl group; A cycloalkyl group having 4 to 23 carbon atoms such as a cyclohexyl group; a cycloalkenyl group having 4 to 23 carbon atoms such as a cyclopentenyl group and a cyclohexenyl group; a phenoxymethyl group, a 2-phenoxyethyl group, a 4-phenoxybutyl group, etc.
- Aryloxyalkyl group having 7 to 26 carbon atoms (-ROAr group); aralkyl group having 7 to 20 carbon atoms such as benzyl group and 3-phenylpropyl group; carbon number having a cyano group such as cyanomethyl group and ⁇ -cyanoethyl group
- 1 to 20 carbon atoms such as alkoxy groups having 1 to 20 carbon atoms, acetamido groups, benzenesulfonamide groups (C 6 H 5 SO 2 NH 2 —), amide groups having 2 to 21 carbon atoms, methylthio groups, ethylthio groups, etc.
- An alkylthio group (—SR group), an acetyl group, a benzoyl group and other acyl groups having 1 to 20 carbon atoms, a methoxycarbonyl group, an acetoxy group and other ester groups having 2 to 21 carbon atoms (—COOR group and —OCOR group)
- An aryl group having 6 to 20 carbon atoms such as a phenyl group, a naphthyl group, a biphenyl group, or a tolyl group, an aryl group having 6 to 20 carbon atoms substituted by an electron donating group and / or an electron withdrawing group, or an electron donating group
- And / or an electron-withdrawing group is preferably a substituted benzyl group, a cyano group, and a methylthio group (—SCH 3 ).
- the alkyl moiety may be linear, branched or cyclic.
- R 5 , R 6 , R 7 and R 8 are each independently hydrogen, halogen, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino.
- Two or more of R 5 , R 6 , R 7, and R 8 may be bonded to form a cyclic structure, or may include a hetero atom bond.
- halogen examples include fluorine, chlorine, bromine and the like.
- the organic group is not particularly limited as long as the effects of the present invention are not impaired, and is saturated or unsaturated alkyl group, saturated or unsaturated cycloalkyl group, aryl group, aralkyl group, and saturated or unsaturated halogenated alkyl group.
- the bond other than the hydrocarbon group in the organic group of R 5 to R 8 is not particularly limited as long as the effect of the present invention is not impaired.
- the substituent other than the hydrocarbon group in the organic group of R 5 to R 8 is not particularly limited as long as the effect of the present invention is not impaired, and includes a halogen atom, a hydroxyl group, a mercapto group, a sulfide group, a cyano group, Isocyano group, cyanato group, isocyanato group, thiocyanato group, isothiocyanato group, silyl group, silanol group, alkoxy group, alkoxycarbonyl group, carbamoyl group, thiocarbamoyl group, nitro group, nitroso group, carboxyl group, carboxylate group, acyl group Acyloxy group, sulfino group, sulfo group, sulfonate group, phosphino group, phosphinyl group, phosphono group, phosphonate group, hydroxyimino group, saturated or unsaturated alkyl ether group
- the hydrogen contained in the substituent may be substituted with a hydrocarbon group.
- the hydrocarbon group contained in the substituent may be any of linear, branched, and cyclic.
- examples of the substituent other than the hydrocarbon group in the organic group represented by R 5 to R 8 include a halogen atom, a hydroxyl group, a mercapto group, a sulfide group, a cyano group, an isocyano group, a cyanato group, an isocyanato group, a thiocyanato group, and an isothiocyanato group.
- R 5 to R 8 may be bonded to each other to form a cyclic structure.
- the cyclic structure is a combination of two or more selected from the group consisting of saturated or unsaturated alicyclic hydrocarbons, heterocycles, and condensed rings, and the alicyclic hydrocarbons, heterocycles, and condensed rings.
- the structure which becomes may be sufficient.
- R 5 ⁇ R 8 is formed by two or more of them are combined, naphthalene share atoms of the benzene ring of R 5 ⁇ R 8 are attached, anthracene, phenanthrene, and fused ring indene You may do it.
- R 5 , R 6 , R 7 and R 8 is halogen, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonate group, phosphino group. It is preferably a group, a phosphinyl group, a phosphono group, a phosphonato group, an amino group, an ammonio group or an organic group.
- the wavelength of light to be absorbed can be adjusted.
- the desired wavelength is absorbed. It can also be made to do.
- the absorption wavelength can be shifted to a longer wavelength by introducing a substituent that extends the conjugated chain of the aromatic ring. It is also possible to improve the solubility and compatibility with the polymer precursor to be combined. Thereby, it is possible to improve the sensitivity of the photosensitive resin composition in consideration of the absorption wavelength of the polymer precursor to be combined.
- R 5 to R 8 are, for example, an alkyl group having 1 to 20 carbon atoms such as a methyl group, an ethyl group or a propyl group; a cycloalkyl group having 4 to 23 carbon atoms such as a cyclopentyl group or a cyclohexyl group; a cyclopentenyl group or a cyclohexenyl group.
- a cycloalkenyl group having 4 to 23 carbon atoms such as a group; an aryloxyalkyl group having 7 to 26 carbon atoms such as phenoxymethyl group, 2-phenoxyethyl group and 4-phenoxybutyl group (—ROAr group); benzyl group, 3
- An aralkyl group having 7 to 20 carbon atoms such as a phenylpropyl group; an alkyl group having 2 to 21 carbon atoms having a cyano group such as a cyanomethyl group or ⁇ -cyanoethyl group; 1 to 20 carbon atoms having a hydroxyl group such as a hydroxymethyl group Alkyl groups, methoxy groups, ethoxy groups and the like, alkoxy groups having 1 to 20 carbon atoms, acetamide groups, benzenesulfonamide groups C 6 H 5 SO 2 NH 2 -) amide group having 2 to 21 carbon atoms such as a methylthio group, an al
- An aryl group of ⁇ 20, an aryl group having 6 to 20 carbon atoms substituted with an electron donating group and / or an electron withdrawing group, a benzyl group substituted with an electron donating group and / or an electron withdrawing group, a cyano group, and A methylthio group (—SCH 3 ) is preferred.
- the alkyl moiety may be linear, branched or cyclic.
- R 5 to R 8 two or more of them are bonded to each other and a condensed ring such as naphthalene, anthracene, phenanthrene, or indene is shared by sharing the atoms of the benzene ring to which R 5 to R 8 are bonded. Even if it forms, it is preferable from the point that absorption wavelength becomes longer.
- R 5 when at least one of R 6, R 7 and R 8 is a hydroxyl group, and R 5, R 6, it does not contain a hydroxyl group at R 7 and R 8 compound From the viewpoint of improving the solubility in a basic aqueous solution or the like and increasing the absorption wavelength.
- R 8 when R 8 is a phenolic hydroxyl group, a reaction site for cyclization of a compound isomerized to a cis isomer increases, which is preferable from the viewpoint of easy cyclization.
- any one of R 5 and R 6 , R 6 and R 7 , R 7 and R 8 , R 5 and R 6, and R 7 and R 8 is represented by the following formula (3): It is also preferable to have the partial structure from the viewpoint of excellent sensitivity.
- X is a linking group capable of binding to two oxygen atoms.
- —O—X—O— moiety a substituent similar to an alkoxy group having an effect of shifting the absorption wavelength to a long wavelength is introduced into adjacent positions among the 3rd to 6th positions of the benzene ring. It is a structure in which a substituent is bonded. Therefore, the base generator having such a substituent binds to —O—X—O— as compared to the case where an alkoxy group is introduced into each of adjacent positions among the 3rd to 6th positions of the benzene ring.
- oxygen atoms are fixed, the absorption wavelength is efficiently increased, a basic substance can be generated with a small amount of electromagnetic wave irradiation, and the sensitivity can be increased.
- X in the partial structure of the chemical formula (3) is not particularly limited as long as it is a linking group capable of binding to two oxygen atoms.
- the above X may contain a hetero atom, and may have a substituent, a straight-chain, branched or cyclic saturated or unsaturated group having 1 to 20 carbon atoms.
- An aliphatic or aromatic hydrocarbon group may contain a hetero atom, and may contain a linear, branched or cyclic silicon-silicon double bond having 1 to 20 silicon atoms.
- a linking group selected from the group consisting of a hydrogen silicide group, an ether bond, a thioether bond, a carbonyl bond, a thiocarbonyl bond, an ester bond, an amide bond, a urethane bond, a carbonate bond, and a sulfonyl bond, and combinations thereof.
- a hydrogen silicide group an ether bond, a thioether bond, a carbonyl bond, a thiocarbonyl bond, an ester bond, an amide bond, a urethane bond, a carbonate bond, and a sulfonyl bond, and combinations thereof.
- a hydrogen silicide group e.g., a hydrogen silicide group, an ether bond, a thioether bond, a carbonyl bond, a thiocarbonyl bond, an ester bond, an amide bond, a urethane bond, a carbonate bond, and a sulfonyl
- the linear, branched, or cyclic saturated aliphatic hydrocarbon group in X above may contain a hetero atom, and may have a substituent.
- the saturated aliphatic hydrocarbon group include an alkylene group such as a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexylene group, a decylene group, a dodecylene group, a hexadecylene group, and an octadecylene group; an ethylidene group And propylidene group; cycloalkylene groups such as cyclohexylene group, norbonalene group, adamantalene group and the like.
- the linear, branched, or cyclic unsaturated aliphatic hydrocarbon group in X may contain a hetero atom, and may have a substituent.
- the unsaturated aliphatic hydrocarbon group include a vinylene group.
- the substituent that the saturated aliphatic hydrocarbon group and the unsaturated aliphatic hydrocarbon group may have is the same as the substituent other than the hydrocarbon group in the organic group of R 5 to R 8. It may be.
- the saturated aliphatic hydrocarbon group and the unsaturated aliphatic hydrocarbon group include a hetero atom
- the saturated aliphatic hydrocarbon group or the unsaturated aliphatic hydrocarbon group may be combined with an ether bond, a thioether bond
- Examples include carbonyl bond, thiocarbonyl bond, ester bond, amide bond, urethane bond, carbonate bond, sulfonyl bond and the like.
- the aromatic hydrocarbon group in X may contain a hetero atom and may have a substituent. Examples of the aromatic hydrocarbon group include a phenylene group and a naphthylene group.
- aromatic hydrocarbon group contains a hetero atom (heterocycle), specific examples thereof include furan and thiophene.
- the linear, branched, or cyclic hydrogen silicide group in X above may contain a hetero atom, and may have a substituent. Further, it may contain a silicon-silicon double bond.
- the silicide hydrogen group in the case of divalent is - (SiH 2) n -, 1 monovalent If - be (SiH 2) n -H in silicon and consisting only group hydrogen , N is a natural number of 1 or more.
- the hydrogen silicide group may have include a halogen atom, a hydroxyl group, and an organic group. These substituents may be the same as those described for R 5 to R 8 above. Moreover, when the said hydrogen silicide group contains a hetero atom, what was illustrated in the said saturated aliphatic hydrocarbon group can be mentioned as a bond which X contains.
- the partial structure represented by the chemical formula (3) is a partial structure represented by the following chemical formula (4).
- R b is independently hydrogen, halogen atom, hydroxyl group, nitro group, nitroso group, mercapto group, silanol group, monovalent hydrogen silicide group which may have a substituent, phosphino group, phosphinyl group, A phosphono group or an organic group, which may be the same or different, and R a and R b may be bonded to form a cyclic structure, and may include a hetero atom bond.
- N represents an integer of 1 to 10
- Examples of the cyclic structure formed by combining R a and R b include saturated or unsaturated alicyclic hydrocarbons, heterocyclic rings, and aromatic hydrocarbons, and the alicyclic hydrocarbons, heterocyclic rings, and aromatics. It may be a structure in which two or more selected from the group consisting of hydrocarbons are combined. For example, when Z is a carbon atom, any two of n R a and R b may be bonded to form an alicyclic hydrocarbon or a heterocyclic ring. When Z is a carbon-carbon double bond, R a and R b may form a cyclic structure together with the carbon-carbon double bond of Z to form an aromatic ring.
- n R a and R b may be organic groups, and carbon atoms may be bonded to each other to form a cyclic structure.
- Each of n R a and R b may be a hydrogen silicide group which may have a substituent, and silicon atoms may be bonded to each other to form a cyclic structure.
- the cyclic structure may include a bond of a heteroatom such as oxygen.
- R a and R b may form a cyclic structure with carbon atoms and / or silicon atoms together with the silicon-silicon double bond of Z.
- the structure may further include a silicon-silicon double bond.
- the halogen atom and the organic group in R a and R b may be the same as described in R 5 to R 8 above.
- n represents an integer of 1 to 10, preferably an integer of 1 to 6, and more preferably 1 to 3.
- any of R 5 , R 6 , R 7, and R 8 has a partial structure represented by the following formula (5), which is highly sensitive and has high solubility in organic solvents and combined polymer precursors. It is preferable from the viewpoint of excellent affinity with the body. Since the partial structure represented by the formula (5) is a substituent similar to an alkoxy group, it has the effect of shifting the absorption wavelength to a long wavelength, can generate a basic substance with a small amount of electromagnetic wave irradiation, and increases sensitivity. It is estimated that The partial structure represented by formula (5) has a R c O site a repeating structure, solubility and affinity can be estimated to be good.
- R c is a linking group capable of bonding to two oxygen atoms.
- R d is hydrogen, a silyl group, a silanol group, a phosphino group, a phosphinyl group, a phosphono group, or an organic group.
- N is an integer of 1 or more.
- the partial structure of the above formula (5) may be included in at least one of R 5 , R 6 , R 7 and R 8 .
- a structure in which the partial structure of the above formula (5) is directly bonded to the benzene ring as a substituent at any position of R 5 , R 6 , R 7 and R 8 can be mentioned.
- Any of R 5 , R 6 , R 7 and R 8 may be an organic group, and may have the partial structure represented by the chemical formula (5) as a part of the organic group.
- R 5 to R 8 When two or more of R 5 to R 8 are bonded to form an alicyclic hydrocarbon structure such as a cyclohexyl group, or two or more of R 5 to R 8 are bonded to bond them
- the condensed benzene ring atom is shared to form a condensed ring such as naphthalene, anthracene, phenanthrene, indene, fluorene, etc.
- the cyclic structure has the partial structure of the above formula (5) as a substituent. Also good.
- R c in the partial structure of the chemical formula (5) is not particularly limited as long as it is a linking group capable of binding to two oxygen atoms.
- the n R c included in the repeating unit may be the same or different.
- the above R c may contain a heteroatom and may have a substituent, which is a linear, branched or cyclic saturated or unsaturated group having 1 to 20 carbon atoms.
- Saturated aliphatic or aromatic hydrocarbon group may contain a hetero atom, and may contain a straight chain, branched or cyclic silicon-silicon double bond having 1 to 20 silicon atoms It is preferably a linking group selected from the group consisting of a hydrogen silicide group, a carbonyl bond, a thiocarbonyl bond, a sulfonyl bond, a sulfinyl bond, and an azo bond.
- the above R c may contain a hetero atom, and may have a substituent, a linear, branched or cyclic saturated or unsaturated aliphatic group having 1 to 20 carbon atoms, or aromatic Silica which may contain an aromatic hydrocarbon group, may contain a hetero atom, may have a substituent, and may have a linear, branched or cyclic silicon-silicon double bond having 1 to 20 silicon atoms
- a linking group selected from the group consisting of a hydrogen group, a carbonyl bond, a thiocarbonyl bond, a sulfonyl bond, and a sulfinyl bond is preferable. As these, those similar to X in the above formula (3) can be used.
- R c a linear, branched or cyclic saturated or unsaturated aliphatic or aromatic hydrocarbon having 1 to 20 carbon atoms which may contain a hetero atom and may have a substituent It is preferably a group, and is preferably a linear, branched, or cyclic saturated or unsaturated aliphatic hydrocarbon group having 1 to 10 carbon atoms which may have a substituent.
- a linear, branched or cyclic saturated aliphatic hydrocarbon group having 1 to 6 carbon atoms which may have a substituent is preferable, and further 1 to 1 carbon atoms which may further have a substituent.
- 3 linear, branched or cyclic saturated aliphatic hydrocarbon groups are preferred.
- N which is the number of repetitions of OR c is an integer of 1 or more.
- n is preferably adjusted as appropriate depending on the structure and molecular weight of R c , but is preferably 1 to 20, and more preferably 1 to 10.
- R d is hydrogen, a silyl group, a silanol group, a phosphino group, a phosphinyl group, a phosphono group, or an organic group, the organic group, using the same organic groups listed above R 5 ⁇ R 8 be able to.
- R d is preferably an organic group.
- R 9 is a protecting group that can be deprotected by heating and / or irradiation with electromagnetic waves.
- “deprotectable” means that there is a possibility of changing from —OR 9 to —OH.
- R 9 is deprotected by heating and / or irradiation with electromagnetic waves to generate a hydroxyl group.
- R 9 is a protecting group for a phenolic hydroxyl group that can be deprotected by heating and / or irradiation with electromagnetic waves under the condition that the amide group present in formula (1) does not decompose in the base generator of the present invention. It can be used without being particularly limited.
- the amide bond is a strong acid such as boron tribromide or aluminum trichloride, strong Lewis acid such as sulfuric acid, hydrochloric acid or nitric acid, or strong acid such as sodium hydroxide. Decomposes on heating under basic conditions. Therefore, such a protecting group that can be deprotected only by heating under strongly acidic or strongly basic conditions is inappropriate as a protecting group for use in the base generator of the present invention.
- R 9 is selected as appropriate depending on the type of compound used in combination with the base generator, the application method of the base generator, and the synthesis method for the purpose of improving solubility and compatibility or changing the reactivity during synthesis. It is what is done.
- R 9 can be selected from a silyl group, a silanol group, a phosphino group, a phosphinyl group, a phosphono group, or an organic group.
- the organic group in R 9 is usually a monovalent organic group.
- R 9 is at least one selected from the group consisting of organic groups represented by the following formulas (2-1) to (2-6), and an amide group present in the formula (1) It is preferable from the viewpoint that it can be deprotected by heating and / or irradiation with electromagnetic waves under the condition that does not decompose.
- R 10 , R 11 and R 12 are each independently hydrogen, a halogen atom, or an organic group
- R 13 is an organic group
- R 14 is an organic group
- R 15 , R 16 , and R 17 are each bonded to each other to represent a cyclic structure.
- R 20 is an organic group.
- the organic group in R 10 to R 20 is usually a monovalent organic group, but may be a divalent or higher valent organic group.
- the organic group represented by the above formula (2-1) can be obtained, for example, by a reaction between a phenolic hydroxyl group and a vinyl ether compound as follows.
- R 10 , R 11 , R 12 , R 13 of the organic group represented by the above formula (2-1) is obtained by the above reaction, it is determined by the structure of the vinyl ether compound used.
- the organic group represented by the above formula (2-1) may be appropriately selected depending on the kind of the compound such as a polymer precursor used in combination with the base generator and the application method, and is particularly limited. is not.
- R 10 , R 11 , and R 12 are preferably hydrogen or a substituted or unsubstituted alkyl group, allyl group, or aryl group. In particular, from the viewpoint of easy availability of raw materials, hydrogen is preferable. Moreover, it is preferable not to include a primary, secondary, or tertiary amino group or a substituent having an active hydrogen such as a hydroxyl group from the viewpoint of stability of the compound.
- R 13 organic group represented by the above formula (2-1) is one or more organic groups having a carbon number.
- R 13 is exemplified by a group having a hydrocarbon skeleton.
- the group having a hydrocarbon skeleton may contain a bond or substituent other than a hydrocarbon such as a heteroatom, or such a heteroatom part may be incorporated into an aromatic ring to form a heterocyclic ring.
- Examples of the group having a hydrocarbon skeleton include a linear, branched, or cyclic saturated or unsaturated hydrocarbon group, a linear, branched, or cyclic saturated or unsaturated halogenated alkyl group, or phenyl, naphthyl.
- An aromatic group such as a group containing an ether bond in a linear or branched saturated or unsaturated hydrocarbon skeleton (eg, — (RO) n —R ′, wherein R and R 'Is a substituted or unsubstituted saturated or unsaturated hydrocarbon, n is an integer greater than or equal to 1; -R "-(OR”') m , where R “and R"'are substituted or unsubstituted saturated or unsaturated hydrocarbons, m is an integer of 1 or more, - (O-R "' ) m is R" are attached to different carbon from the end of the;.
- a linear or branched saturated or unsaturated hydrocarbon skeleton eg, — (RO) n —R ′, wherein R and R 'Is a substituted or unsubstituted saturated or unsaturated hydrocarbon, n is an integer greater than or equal to 1; -R "-(OR”') m
- R 13 of the organic group represented by the above formula (2-1) may be linked to R 10 or R 11 to have a cyclic structure.
- R 13 preferably does not contain a primary, secondary, or tertiary amino group or a substituent having an active hydrogen such as a hydroxyl group from the viewpoint of stability of the compound.
- the organic group represented by the following formula (2-1) is deprotected by heating and / or irradiation with electromagnetic waves.
- the deprotection temperature is generally the oxygen atom of the ether bond of the vinyl ether compound in R 13 in the above formula.
- the carbon directly bonded to the tertiary carbon atom hereinafter sometimes simply referred to as “tertiary carbon”
- secondary carbon hereinafter sometimes simply referred to as “secondary carbon”
- first tends to increase in the order of the substituent of a primary carbon atom (hereinafter, sometimes simply referred to as “primary carbon”).
- the reaction between the vinyl ether compound for protecting and the hydroxyl group generally has a high reaction rate in the order of the primary carbon ⁇ secondary carbon ⁇ tertiary carbon substituent in R 13 in the above formula. There is a tendency to show. Therefore, it is preferable that the heating temperature for deprotection is selected depending on the compound combined with the base generator and the method of use, and the protecting group is appropriately selected from the heating temperature.
- a vinyl ether compound for deriving a carbon atom bonded to ether oxygen (a carbon atom bonded to an oxygen atom in R 13 of formula (2-1)) or an organic group of formula (2-1)
- the primary carbon atom means the case where the other carbon atom bonded is 0 or 1
- the secondary carbon atom Means the case where there are two other carbon atoms bonded
- the tertiary carbon atom means the case where there are three other carbon atoms bonded.
- R 13 in the formula (2-1) preferably has 1 to 18 carbon atoms from the viewpoint of the volatility of the decomposition product, and more preferably 3 to 10 carbon atoms.
- R 13 in the formula (2-1) is not particularly limited, and examples thereof include a methyl group, an ethyl group, an ethynyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an n-hexyl group, and a cyclohexyl group.
- R 13 is linked to R 10 or R 11 to form a cyclic structure, and the substituent corresponding to R 9 is a cyclic ether such as a 2-tetrahydropyranyl group, etc. Is mentioned.
- the organic group represented by the above formula (2-2) can be obtained, for example, by a reaction between a phenolic hydroxyl group and a so-called carbonate-based protecting group.
- the carbonate protecting group include tert-butoxycarbonyl group (Boc-), benzyloxycarbonyl group (Z-), 9-fluorenylmethoxycarbonyl (Fmoc-), 1,1-dioxobenzo [b] thiophene- 2-ylmethoxycarbonyl group (Bsmoc-), 2- (4-nitrophenylsulfonyl) ethoxycarbonyl group (Nsc-), p-methoxybenzyloxycarbonyl group (Z (OMe-)), allyloxycarbonyl group (Alloc- ), 2,2,2-trichloroethoxycarbonyl group (Troc-) and the like.
- R 14 in the formula (2-2) is not particularly limited, and examples thereof include tert-butyl group, benzyl group, 9-fluorenylmethyl group, 2,2,2-trichloroethyl group, allyl group, p- Examples thereof include a methoxybenzyl group, 1,1-dioxobenzo [b] thiophen-2-ylmethyl group, 2- (4-nitrophenylsulfonyl) ethyl group, o-nitrobenzyl group and the like. In the case of an o-nitrobenzyl group, deprotection is possible by irradiation with electromagnetic waves.
- the organic group represented by the above formula (2-3) can be obtained, for example, by a reaction between a phenolic hydroxyl group and a silyl ether protecting group.
- silyl ether protecting group include trimethylsilyl group (TMS-), tert-butyldimethylsilyl group (TBDMS-), tert-butyldiphenylsilyl group (TBDPS-), triisopropylsilyl group (TIPS-) and the like.
- R 15 , R 16 , and R 17 in the formula (2-3) are not particularly limited.
- alkyl groups such as methyl, tert-butyl, and isopropyl groups, and phenyl aryl groups are preferably used. .
- the organic group represented by the above formula (2-4) can be obtained by, for example, a phenolic hydroxyl group and an acid chloride or acid anhydride.
- Examples of the ester protecting group represented by the formula (2-4) include an acetyl group (Ac-), a pivaloyl group, and a benzoyl group.
- R 18 in the formula (2-4) is not particularly limited.
- an alkyl group such as a methyl group or a tert-butyl group
- an aryl group such as a phenyl group
- an aralkyl group such as a benzyl group, or the like is preferably used.
- the organic group represented by the above formula (2-5) can be obtained from a phenolic hydroxyl group and a halide using, for example, the Williamson reaction.
- Examples of the ether protecting group represented by the formula (2-5) include a benzyl group which may have a substituent.
- R 19 in the formula (2-5) is an aromatic ring which may have a substituent, and is not particularly limited, and examples thereof include a phenyl group and a naphthyl group which may have a substituent.
- the organic group represented by the formula (2-5) is an o-nitrobenzyl group, that is, when R 19 is a 2-nitrophenyl group, deprotection is possible by irradiation with electromagnetic waves.
- the organic group represented by the above formula (2-6) can be obtained, for example, by a reaction between a phenolic hydroxyl group and an isocyanate.
- Examples of the carbamate protecting group include benzyl isocyanate.
- R in the formula (2-6) is not particularly limited, and examples thereof include a benzyl group.
- the structure represented by the chemical formula (1) has a geometric isomer, but it is preferable to use only the trans isomer.
- cis isomers that are geometric isomers may be mixed during synthesis and purification steps and storage, and in this case, a mixture of trans isomer and cis isomer may be used. It is preferable that the ratio of cis-isomer is less than 10%.
- the base generator represented by the chemical formula (1) preferably has a temperature (5% weight reduction temperature) of 60 ° C. or more when heated to reduce 5% by weight from the initial weight, and more preferably 100 ° C. It is preferable that the temperature is at least ° C.
- a temperature 5% weight reduction temperature
- a high boiling point solvent such as N-methyl-2-pyrrolidone
- the x% weight reduction temperature is the time when the weight of the sample is reduced by x% from the initial weight when the weight loss is measured using a thermogravimetric analyzer (ie, the sample weight is the initial (100 ⁇ x )%)).
- the base generator of the present invention is a heating process (for example, after development) (for example, When the polymer to be combined is a polyimide precursor, it is preferably decomposed or volatilized by an imidization process).
- the temperature when the 50% weight is reduced from the initial weight (50% weight reduction temperature) is preferably 400 ° C. or less, and more preferably 350 ° C. or less.
- the boiling point of the generated base is 25 ° C. or more because the handleability at room temperature is improved.
- the boiling point of the generated base is not 25 ° C. or higher, when it is used as a coating film, the amine generated during drying tends to evaporate, which may make the operation difficult.
- the boiling point of the generated base is 25 ° C. or more because the handleability at room temperature is improved.
- the boiling point of the generated base is not 25 ° C. or higher, when it is used as a coating film, the amine generated during drying tends to evaporate, which may make the operation difficult.
- the generated base is used as a curing accelerator that does not remain in the film, if the weight loss of the generated base at 350 ° C. is 80% or more, the base remains in the cured polymer. It is preferable because it is easy to suppress the above.
- the generated base is used as a crosslinking agent or a curing agent remaining in the film, the weight reduction of the generated base is not a problem.
- the heating temperature for deprotecting the protecting group and generating the base is appropriately selected depending on the polymer precursor to be combined and the purpose, and is not particularly limited. . Heating by the temperature (for example, room temperature) of the environment where the base generator is placed may be used, and in this case, the base is gradually generated. Further, since the base is also generated by heat generated as a by-product during irradiation with electromagnetic waves, heating may be performed substantially simultaneously with the heat generated as a by-product during irradiation with electromagnetic waves. From the viewpoint of increasing the reaction rate and generating the base efficiently, the heating temperature for generating the base is preferably 30 ° C. or higher, more preferably 60 ° C. or higher, still more preferably 100 ° C.
- the unexposed part may be cured by heating at 60 ° C. or higher, so that the suitable heating temperature is not limited to the above.
- the protecting group may be deprotected at a low temperature to generate a base at a higher temperature.
- the deprotection of the protecting group may be performed only by heating or only by electromagnetic wave irradiation.
- the protective group When the protective group is deprotected only by electromagnetic wave irradiation, it may be deprotected by the electromagnetic wave irradiated to generate the base, or the wavelength is changed between the electromagnetic wave for deprotecting and the electromagnetic wave for generating the base. You may do it.
- deprotection is performed by irradiating a long wavelength electromagnetic wave, and then isomerization is performed to generate a base with a short wavelength electromagnetic wave.
- the irradiation amount of the electromagnetic wave in these cases varies depending on the electromagnetic wave and is not particularly limited, and is appropriately adjusted.
- deprotection may be performed by performing heating and electromagnetic wave irradiation simultaneously or alternately with heating and electromagnetic wave irradiation. Furthermore, deprotection may be performed by heating before exposure.
- the sensitivity of the base generator may be deteriorated by introducing a protecting group and shortening the absorption wavelength. In such a case, the sensitivity at the time of electromagnetic wave irradiation can be improved by previously deprotecting the protective group by heating before the electromagnetic wave irradiation and irradiating the electromagnetic wave.
- the deprotection conditions for the protecting group can vary depending on the components that coexist in the composition. For example, when other photoacid generators or photobase generators are included, the heating temperature after exposure may change due to the influence of an acid / base generated by light irradiation.
- the base generator represented by the formula (1) generates a base only by irradiation with an electromagnetic wave, but generation of the base is promoted by heating appropriately. Therefore, when the base generator represented by the formula (1) is used in order to efficiently generate the base, the base is generated by heating after the electromagnetic wave irradiation (exposure) or simultaneously with the electromagnetic wave irradiation. . Exposure and heating may be performed alternately. The most efficient method is a method of heating simultaneously with exposure.
- the method for synthesizing the base generator represented by the chemical formula (1) of the present invention will be described by taking the case where the hydroxyl group of 2-hydroxycinnamic acid amide is protected as an example, but the present invention is not limited to this. Absent.
- the base generator of the present invention can be synthesized by a plurality of conventionally known synthesis routes.
- 2-hydroxycinnamic amide can be synthesized, for example, by reacting 2-hydroxy cinnamic acid with cyclohexylamine.
- the desired product can be obtained by dissolving 2-hydroxycinnamic acid and cyclohexylamine in tetrahydrofuran in the presence of a condensing agent such as 1-ethyl-3- (3-dimethylaminopropyl) carbodiimide hydrochloride and stirring.
- Cinnamic acid into which each substituent is introduced can be synthesized by performing wittig reaction, Knoevenagel reaction, or Perkin reaction on hydroxybenzaldehyde having a corresponding substituent.
- the wittig reaction is preferable from the viewpoint that a trans isomer can be selectively obtained.
- transduced each substituent is carried out by using a general ether synthetic
- the introduction of the protecting group (R 9 ) in the phenolic hydroxyl group may be introduced during the synthesis or may be introduced at the end of the synthesis.
- a vinyl ether compound when protecting with a vinyl ether compound, it can be synthesized by reacting 2-hydroxycinnamic amide with vinyl ether. In the presence of an acid catalyst such as pyridinium p-toluenesulfonate, 2-hydroxycinnamic acid amide and vinyl ether compound are dissolved in dimethylformamide and stirred to obtain the desired product.
- a reagent for introducing 2-hydroxycinnamic acid amide and a carbonate-based protecting group for example, di-t-butyl dicarbonate, benzyloxycarbonyl chloride, N- (9- Fluorenylmethoxycarbonyloxy) succinimide and the like.
- a silyl ether protecting group for example, chlorotrimethylsilane, tert-butyldimethyl in dimethylformamide under a base catalyst such as imidazole.
- Chlorosilane, tert-butyldiphenylchlorosilane, etc. When protecting with an ester-based protecting group, it can be synthesized with 2-hydroxycinnamic amide and an acid chloride or acid anhydride under a base catalyst such as triethylamine.
- a base catalyst such as triethylamine.
- an ether-based protecting group When protecting with an ether-based protecting group, it can be synthesized with 2-hydroxycinnamic amide and a halide (such as benzyl chloride) in the presence of a strong base such as sodium hydride.
- 2-hydroxycinnamic amide and isocyanate for example, benzyl isocyanate.
- the base generator represented by the chemical formula (1) of the present invention absorbs at least a part of the exposure wavelength in order to sufficiently exhibit the function of base generation for the polymer precursor to be the final product. It is necessary to have.
- the wavelength of a high-pressure mercury lamp that is a general exposure light source includes 365 nm, 405 nm, and 436 nm. For this reason, it is preferable that the base generator represented by the chemical formula (1) of the present invention absorbs at least one electromagnetic wave having a wavelength of 365 nm, 405 nm, or 436 nm. In such a case, it is preferable because the number of applicable polymer precursors is further increased.
- the base generator represented by the chemical formula (1) has a molar extinction coefficient of 100 or more at an electromagnetic wave wavelength of 365 nm, or 1 or more at 405 nm, and the number of applicable polymer precursors further increases. It is preferable from the point.
- the fact that the base generator represented by the chemical formula (1) of the present invention has absorption in the wavelength region is expressed by the chemical formula (1) in a solvent (for example, acetonitrile) that does not absorb in the wavelength region.
- concentration of the generated base generator is 1 ⁇ 10 ⁇ 4 mol / L or less (usually about 1 ⁇ 10 ⁇ 4 mol / L to 1 ⁇ 10 ⁇ 5 mol / L.
- an ultraviolet-visible spectrophotometer for example, UV-2550 (manufactured by Shimadzu Corporation)
- a base such as an acid-base indicator is not limited to the combination with a polymer precursor whose reaction to the final product is accelerated by heating in the presence of a basic substance or in the presence of a basic substance, which will be described in detail later.
- various photosensitive compositions can be formed in combination with a compound whose structure and physical properties change. Such photosensitive compositions can be used for paints, printing inks, sealants or adhesives, display devices, semiconductor devices, electronic components, micro electro mechanical systems (MEMS), optical members, or architecture. It can be used as a material forming material.
- the photobase generator when an image forming layer is exposed in an image forming medium obtained by coating or impregnating a base material with an image forming layer containing at least a photobase generator and an acid-base indicator, the photobase generator However, it can also be applied to a display device such as an image forming medium characterized in that a base that reacts with an acid-base indicator is generated and an image is formed.
- the photosensitive resin composition according to the present invention includes a polymer precursor whose reaction to a final product is promoted by heating with a basic substance or in the presence of a basic substance, and the following chemical formula according to the present invention:
- a base generator is contained, which is represented by (1) and generates a base by irradiation with electromagnetic waves and heating.
- R 1 and R 2 are each independently hydrogen or an organic group and may be the same or different.
- R 1 and R 2 are bonded to form a cyclic structure. And may contain a heteroatom bond, provided that at least one of R 1 and R 2 is an organic group
- R 3 and R 4 are each independently hydrogen, halogen, Hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonate group, phosphino group, phosphinyl group, phosphono group, phosphonate group, or organic group, which are the same be different even good .
- R 5, R 6, R 7 and R 8 are each independently hydrogen, halogen, a hydroxyl group, a mercapto group, a sulfide group, a silyl group, a silanol group, a nitro group, two Nitroso group,
- the base generator represented by the formula (1) has the specific structure described above, and the (—CR 4 ⁇ CR 3 —C ( ⁇ O) —) moiety is cis by irradiation with electromagnetic waves.
- the protecting group R 9 is deprotected and cyclized to generate the base (NHR 1 R 2 ).
- the polymer precursor is promoted to react with the final product by the action of the basic substance generated from the base generator.
- the photosensitive resin composition according to the present invention Due to such a change in solubility of the polymer precursor, the photosensitive resin composition according to the present invention has a difference in solubility between the exposed portion and the unexposed portion, that is, the solubility contrast is increased. Pattern formation is possible.
- the photosensitive resin composition of the present invention has high sensitivity.
- the photosensitive resin composition of the present invention has a wide range of applicable polymer precursors, and is widely applied in fields where it is possible to make use of characteristics such as solubility changes of the polymer precursor and the base generator. The For example, it is suitably applied in a field where the characteristics of the photosensitive polyimide precursor resin composition and its imidized product can be utilized.
- the structural component of the photosensitive resin composition which concerns on this invention is demonstrated, about the base generator used for the photosensitive resin composition which concerns on this invention, the thing similar to the said base generator concerning this invention is mentioned. Since it can be used, explanation here is omitted. Therefore, the polymer precursor and other components that can be appropriately included as necessary will be described in order.
- the base generator and the polymer precursor one kind may be used alone, or two or more kinds may be mixed and used.
- the polymer precursor used in the photosensitive resin composition of the present invention means a substance that finally becomes a polymer exhibiting the desired physical properties by reaction, and the reaction includes intermolecular reaction and intramolecular reaction.
- the polymer precursor itself may be a relatively low molecular compound or a high molecular compound.
- the polymer precursor of the present invention is a compound whose reaction to the final product is promoted by a basic substance or by heating in the presence of the basic substance.
- the polymer precursor is obtained only by the action of the basic substance.
- the mode includes a mode in which the reaction temperature of the polymer precursor to the final product is lowered by the action of the basic substance as compared with the case where there is no action of the basic substance. . If there is a reaction temperature difference due to the presence or absence of such a basic substance, use the reaction temperature difference to select an appropriate temperature at which only the polymer precursor coexisting with the basic substance will react to the final product. By heating at, only the polymer precursor coexisting with the basic substance reacts with the final product, and the solubility in a solvent such as a developer changes. Therefore, the solubility of the polymer precursor in the solvent can be changed depending on the presence or absence of the basic substance, and thus patterning by development using the solvent as a developing solution becomes possible.
- the polymer precursor of the present invention can be used without particular limitation as long as the reaction to the final product is promoted by the basic substance as described above or by heating in the presence of the basic substance. is there.
- the following are typical examples, but the invention is not limited to these.
- Polymer precursor that becomes polymer by intermolecular reaction examples include a compound having a reactive substituent and a polymerization reaction, and a polymer, or a compound that forms a bond (crosslinking reaction) between molecules. And polymers.
- the reactive substituent include an epoxy group, an oxetane group, a thiirane group, an isocyanate group, a hydroxyl group, and a silanol group.
- the polymer precursor also includes a compound that undergoes hydrolysis and polycondensation between molecules, and the reactive substituent includes the polysiloxane precursor —SiX (where X is an alkoxy group, an acetoxy group, an oxime group).
- X is an alkoxy group, an acetoxy group, an oxime group.
- a hydrolyzable group selected from the group consisting of a group, an enoxy group, an amino group, an aminoxy group, an amide group, and a halogen).
- Examples of the compound that has a reactive substituent and undergoes a polymerization reaction include a compound having one or more epoxy groups, a compound having one or more oxetane groups, and a compound having one or more thiirane groups.
- Examples of the polymer having a reactive substituent and undergoing a polymerization reaction include a polymer having two or more epoxy groups (epoxy resin), a polymer having two or more oxetane groups, and two or more thiiranes. And a polymer having a group.
- the compounds and polymers having an epoxy group are specifically described below, but compounds and polymers having an oxetane group and a thiirane group can also be used in the same manner.
- the compound and polymer having one or more epoxy groups are not particularly limited as long as they have one or more epoxy groups in the molecule, and conventionally known compounds can be used.
- the base generator generally also has a function as a curing catalyst for a compound having one or more epoxy groups in the molecule.
- two functional groups having reactivity with the epoxy group are contained in the molecule.
- Two or more compounds may be used in combination.
- the functional group having reactivity with an epoxy group include a carboxyl group, a phenolic hydroxyl group, a mercapto group, a primary or secondary aromatic amino group, and the like. It is particularly preferable to have two or more of these functional groups in one molecule in consideration of three-dimensional curability. Further, it is preferable to use a polymer having a side chain having a weight average molecular weight of 3,000 to 100,000 and having the functional group introduced therein.
- Examples of the polymer having one or more epoxy groups in the molecule include epoxy resins, bisphenol A type epoxy resins derived from bisphenol A and epichlorohydrin, bisphenol F type epoxy derived from bisphenol F and epichlorohydrin.
- Resin bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, alicyclic epoxy resin, diphenyl ether type epoxy resin, hydroquinone type epoxy resin, Multifunctional epoxy resin such as naphthalene type epoxy resin, biphenyl type epoxy resin, fluorene type epoxy resin, trifunctional type epoxy resin and tetrafunctional type epoxy resin There are glycidyl ester type epoxy resins, glycidyl amine type epoxy resins, hydantoin type epoxy resins, isocyanurate type epoxy resins, aliphatic chain epoxy resins, etc.
- epoxy resins may be halogenated and hydrogenated. May be.
- Commercially available epoxy resin products include, for example, JER Coat 828, 1001, 801N, 806, 807, 152, 604, 630, 871, YX8000, YX8034, YX4000 manufactured by Japan Epoxy Resin Co., Ltd., and Epicron manufactured by DIC Corporation.
- examples of the compound that undergoes a cross-linking reaction between molecules include a combination of a compound having two or more isocyanate groups in the molecule and a compound having two or more hydroxyl groups in the molecule. By the reaction with the hydroxyl group, a urethane bond is formed between the molecules, and the polymer can be formed.
- a polymer that undergoes a cross-linking reaction between molecules for example, a combination of a polymer having two or more isocyanate groups in the molecule (isocyanate resin) and a polymer having two or more hydroxyl groups in the molecule (polyol) Is mentioned.
- a combination of a compound that undergoes a cross-linking reaction between molecules and a polymer may be used.
- a combination of a polymer having two or more isocyanate groups in the molecule (isocyanate resin) and a compound having two or more hydroxyl groups in the molecule, and a compound having two or more isocyanate groups in the molecule examples include a combination of polymers (polyols) having two or more hydroxyl groups in the molecule.
- Compound and polymer having isocyanate group As the compound and polymer having an isocyanate group, any known compound can be used without particular limitation as long as it has two or more isocyanate groups in the molecule. Examples of such compounds include low-molecular compounds represented by p-phenylene diisocyanate, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,5-naphthalene diisocyanate, hexamethylene diisocyanate, oligomers, A polymer having an isocyanate group in the side chain or terminal of a polymer having a weight average molecular weight of 3,000 or more may be used.
- the compound and polymer having an isocyanate group are usually used in combination with a compound having a hydroxyl group in the molecule.
- the compound having such a hydroxyl group is not particularly limited as long as it has two or more hydroxyl groups in the molecule, and known compounds can be used.
- a polymer having a weight average molecular weight of 3,000 or more has a hydroxyl group in the side chain or terminal.
- a molecule may be used.
- Polysiloxane precursor examples of the compound that undergoes hydrolysis and polycondensation between molecules include polysiloxane precursors.
- the polysiloxane precursor Y n SiX (4-n) (where Y represents an alkyl group, fluoroalkyl group, vinyl group, phenyl group, or hydrogen which may have a substituent, and X is And a hydrolyzable group selected from the group consisting of an alkoxy group, an acetoxy group, an oxime group, an enoxy group, an amino group, an aminoxy group, an amide group, and a halogen, and n is an integer from 0 to 3. And the hydrolyzed polycondensate of the organosilicon compound.
- the hydrolyzable group is preferably an alkoxy group because the silica-dispersed oligomer solution is easily prepared and easily available.
- the organosilicon compound a well-known thing can be used without a restriction
- Polymer precursor that becomes polymer by intramolecular ring-closing reaction examples include a polyimide precursor and a polybenzoxazole precursor. These precursors may be a mixture of two or more separately synthesized polymer precursors.
- the polyimide precursor and polybenzoxazole precursor which are the preferable polymer precursors of this invention are demonstrated, this invention is not limited to these.
- Polyimide precursor As a polyimide precursor, the polyamic acid which has a repeating unit represented by following Chemical formula (6) is used suitably.
- R 31 is a tetravalent organic group.
- R 32 is a divalent organic group.
- R 33 and R 34 are a hydrogen atom or an organic group.
- N is 1 or more. It is a natural number.
- R 33 and R 34 are organic groups are represented by an alkyl group, an alkenyl group, an alkynyl group, an aryl group, and C n H 2n OC m H 2m + 1 containing an ether bond therein.
- the structure etc. can be mentioned.
- a polyamic acid represented by the following formula (6 ') is preferably used from the viewpoint of alkali developability.
- R 31 is a tetravalent organic group.
- R 32 is a divalent organic group.
- N is a natural number of 1 or more.
- the tetravalent R 31 represents a tetracarboxylic acid residue derived from an acid dianhydride or the like
- the divalent R 32 represents a diamine residue.
- tetravalent R 31 represents only valence for bonding with the acid, but may have further substituents other.
- the divalent value of R 32 indicates only the valence for bonding to the amine, but may have other substituents.
- Polyamic acid is preferable because it can be obtained by simply mixing acid dianhydride and diamine in a solution, so that it can be synthesized by a one-step reaction, can be easily synthesized, and can be obtained at low cost.
- the final curing temperature is less than 300 ° C., more preferably because the temperature required for imidization is low due to the catalytic effect of the basic substance. It can be lowered to 250 ° C. or lower.
- the final cure temperature had to be 300 ° C. or higher, so the use was limited. However, it became possible to lower the final cure temperature, so a wider range Applicable to usage.
- R 31 or R 32 is preferably an aromatic compound, and R 31 and R 32 are more preferably aromatic compounds.
- R 31 of the chemical formula (6 ′) four groups ((—CO—) 2 (—COOH) 2 ) bonded to R 31 may be bonded to the same aromatic ring. It may be bonded to different aromatic rings.
- R 32 of the chemical formula (6 ′) two groups ((—NH—) 2 ) bonded to R 32 may be bonded to the same aromatic ring, and may be bonded to different aromatic rings. It may be combined.
- polyamic acid represented by the chemical formula (6 ′) may be composed of a single repeating unit or may be composed of two or more kinds of repeating units.
- a conventionally known method can be applied. For example, (1) A method of synthesizing a polyamic acid as a precursor from an acid dianhydride and a diamine. (2) A polyimide precursor is synthesized by reacting a carboxylic acid such as an ester acid or an amic acid monomer with a monohydric alcohol, an amino compound, or an epoxy compound synthesized with an acid dianhydride.
- a carboxylic acid such as an ester acid or an amic acid monomer
- a monohydric alcohol such as an amino compound, or an epoxy compound synthesized with an acid dianhydride.
- the method is not limited to this.
- Examples of the acid dianhydride applicable to the reaction for obtaining the polyimide precursor of the present invention include ethylene tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, cyclobutane tetracarboxylic dianhydride, and methylcyclobutane.
- Aliphatic tetracarboxylic dianhydrides such as tetracarboxylic dianhydride and cyclopentanetetracarboxylic dianhydride; pyromellitic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 2,3 ′, 3,4′-benzophenone tetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic Acid dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,3', 3,4'-biphenyltetracarboxylic Dianhydride, 2,2 ′, 6,6′-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl)
- tetracarboxylic dianhydrides include pyromellitic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyltetra.
- the physical properties such as solubility and thermal expansion coefficient are adjusted without significantly impairing transparency. It is possible. Also, rigid acid dianhydrides such as pyromellitic anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, etc. If used, the linear thermal expansion coefficient of the finally obtained polyimide becomes small, but it tends to inhibit the improvement of transparency, so it may be used in combination while paying attention to the copolymerization ratio.
- rigid acid dianhydrides such as pyromellitic anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, etc. If used, the linear thermal expansion coefficient of the finally obtained polyimide becomes small, but it tends to inhibit the improvement of transparency, so it may be used in combination while paying attention to the copo
- the amine component can also be used alone or in combination of two or more diamines.
- the diamine component used is not limited, p-phenylenediamine, m-phenylenediamine, o-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl Sulfide, 4,4′-diaminodiphenylsulfide, 3,3′-diaminodiphenylsulfone, 3,4′-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, 3,3′-diaminobenzophenone, 4,4 ′ -Diaminobenzophenone, 3,4'-di
- guanamines examples include acetoguanamine, benzoguanamine, and the like, and some or all of the hydrogen atoms on the aromatic ring of the diamine are fluoro group, methyl group, methoxy group, trifluoromethyl group, or trifluoromethoxy group.
- Diamines substituted with substituents selected from the group can also be used.
- any one or more of ethynyl group, benzocyclobuten-4′-yl group, vinyl group, allyl group, cyano group, isocyanate group, and isopropenyl group serving as a crosslinking point may be used. Even if it introduce
- the diamine can be selected depending on the desired physical properties. If a rigid diamine such as p-phenylenediamine is used, the finally obtained polyimide has a low expansion coefficient.
- rigid diamines include p-phenylenediamine, m-phenylenediamine, 1,4-diaminonaphthalene, 1,5-diaminonaphthalene, 2, 6 as diamines in which two amino groups are bonded to the same aromatic ring. -Diaminonaphthalene, 2,7-diaminonaphthalene, 1,4-diaminoanthracene and the like.
- diamines in which two or more aromatic rings are bonded by a single bond, and two or more amino groups are each bonded directly or as part of a substituent on a separate aromatic ring for example,
- diamines in which two or more aromatic rings are bonded by a single bond, and two or more amino groups are each bonded directly or as part of a substituent on a separate aromatic ring for example,
- formula (7) Specific examples include benzidine and the like.
- a is a natural number of 1 or more, and the amino group is bonded to the meta position or the para position with respect to the bond between the benzene rings.
- a diamine having a substituent at a position where the amino group on the benzene ring is not substituted and which does not participate in the bond with another benzene ring can also be used.
- These substituents are organic groups, but they may be bonded to each other. Specific examples include 2,2′-dimethyl-4,4′-diaminobiphenyl, 2,2′-ditrifluoromethyl-4,4′-diaminobiphenyl, 3,3′-dichloro-4,4′-diamino.
- Biphenyl, 3,3′-dimethoxy-4,4′-diaminobiphenyl, 3,3′-dimethyl-4,4′-diaminobiphenyl and the like can be mentioned.
- the transmittance for electromagnetic waves having a wavelength of 1 ⁇ m or less can be improved by introducing fluorine as a substituent of the aromatic ring.
- the selected diamine is preferably an aromatic diamine from the viewpoint of heat resistance.
- the diamine may be an aliphatic diamine or siloxane within a range not exceeding 60 mol%, preferably not exceeding 40 mol%.
- Non-aromatic diamines such as diamines may be used.
- a polyimide precursor for example, while cooling a solution obtained by dissolving 4,4′-diaminodiphenyl ether as an amine component in an organic polar solvent such as N-methylpyrrolidone, an equimolar amount of 3,4 3 ′, 4,4′-biphenyltetracarboxylic dianhydride is gradually added and stirred to obtain a polyimide precursor solution.
- the polyimide precursor synthesized in this way has a copolymerization ratio of the aromatic acid component and / or aromatic amine component as large as possible when the final polyimide obtained is required to have heat resistance and dimensional stability. Is preferred.
- the proportion of the aromatic acid component in the acid component constituting the repeating unit of the imide structure is preferably 50 mol% or more, particularly preferably 70 mol% or more, and the amine component constituting the repeating unit of the imide structure
- the proportion of the aromatic amine component in the total is preferably 40 mol% or more, particularly preferably 60 mol% or more, and particularly preferably a wholly aromatic polyimide.
- Polybenzoxazole precursor As the polybenzoxazole precursor used in the present invention, a polyamide alcohol having a repeating unit represented by the following chemical formula (8) is preferably used.
- Polyamide alcohol can be synthesized by a conventionally known method, and can be obtained, for example, by addition reaction of a dicarboxylic acid derivative such as dicarboxylic acid halide and dihydroxydiamine in an organic solvent.
- R 35 is a divalent organic group.
- R 36 is a tetravalent organic group.
- N is a natural number of 1 or more.
- R 35 indicates only the valence for bonding with an acid, it may have another substituent.
- the tetravalent value of R 36 indicates only the valency for bonding with an amine and a hydroxyl group, but may have other substituents.
- the polyamide alcohol having a repeating unit represented by the chemical formula (8) gives an excellent heat resistance and dimensional stability to the finally obtained polybenzoxazole.
- R 35 or R 36 is preferably an aromatic compound, and R 35 and R 36 are more preferably aromatic compounds.
- R 35 of the chemical formula (8) two groups (—CO—) 2 bonded to R 35 may be bonded to the same aromatic ring or bonded to different aromatic rings. May be.
- R 36 of the chemical formula (8) four groups ((—NH—) 2 (—OH) 2 ) bonded to R 36 may be bonded to the same aromatic ring, It may be bonded to different aromatic rings.
- the polyamide alcohol represented by the chemical formula (8) may be composed of a single repeating unit or may be composed of two or more kinds of repeating units.
- dicarboxylic acid and derivatives applicable to the reaction for obtaining the polybenzoxazole precursor examples include phthalic acid, isophthalic acid, terephthalic acid, 4,4′-benzophenone dicarboxylic acid, and 3,4′-benzophenone dicarboxylic acid.
- hydroxydiamine examples include, for example, 3,3′-dihydroxybenzidine, 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, 3,3′-diamino-4,4′-dihydroxydiphenylsulfone, 4,4′-diamino-3,3′-dihydroxydiphenylsulfone, bis- (3-amino-4-hydroxyphenyl) methane, 2,2- Bis- (3-amino-4-hydroxyphenyl) propane, 2,2-bis- (3-amino-4-hydroxyphenyl) hexafluoropropane, 2,2-bis- (4-amino-3-hydroxyphenyl) Hexafluoropropane, bis- (4-amino-3-hydroxyphenyl) methane, 2,2-bis- (4-amino-3) Hydroxyphenyl) propane, 4,4′-diamin
- Polymer precursors such as polyimide precursors and polybenzoxazole precursors have a film thickness of 1 ⁇ m in order to increase the sensitivity of the photosensitive resin composition and obtain a pattern shape that accurately reproduces the mask pattern. Furthermore, it is preferable that the transmittance is at least 5% or more with respect to the exposure wavelength, and it is more preferable that the transmittance is 15% or more.
- the high transmittance of polymer precursors such as polyimide precursors and polybenzoxazole precursors with respect to the exposure wavelength means that there is little loss of electromagnetic waves, and a highly sensitive photosensitive resin composition is used. Obtainable.
- a transmittance with respect to an electromagnetic wave having a wavelength of at least 436 nm, 405 nm, and 365 nm is formed on a film having a thickness of 1 ⁇ m. Is preferably 5% or more, more preferably 15%, particularly preferably 50% or more.
- the weight average molecular weight of a polymer precursor such as a polyimide precursor or a polybenzoxazole precursor is preferably in the range of 3,000 to 1,000,000, depending on its use, and is preferably 5,000 to 500. Is more preferably in the range of 10,000 to 500,000.
- the weight average molecular weight is less than 3,000, it is difficult to obtain sufficient strength when a coating film or film is used. In addition, the strength of the film is reduced when heat treatment or the like is performed to obtain a polymer such as polyimide.
- the weight average molecular weight exceeds 1,000,000, the viscosity increases, the solubility tends to decrease, and it is difficult to obtain a coating film or film having a smooth surface and a uniform film thickness.
- the molecular weight used here is a value in terms of polystyrene measured by gel permeation chromatography (GPC), which may be the molecular weight of a polymer precursor itself such as a polyimide precursor, or chemical imidization with acetic anhydride or the like. It may be after processing.
- GPC gel permeation chromatography
- the solvent for the synthesis of the polyimide precursor or polybenzoxazole precursor is preferably a polar solvent, and representative examples include N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N, N-dimethylformamide.
- examples include methylene sulfone, diethylene glycol dimethyl ether, cyclopentanone, ⁇ -butyrolactone, ⁇ -acetyl- ⁇ -butyrolactone, and these solvents are used alone or in combination of two or more.
- non-polar solvents such as benzene, benzonitrile, 1,4-dioxane, tetrahydrofuran, butyrolactone, xylene, toluene, cyclohexanone and the like can be used as a solvent, and these solvents are used as a raw material dispersion medium. It is used as a reaction regulator, a volatilization regulator of a solvent from the product, a film smoothing agent, and the like.
- the photosensitive resin composition of the present invention has an advantage that the solubility contrast between the exposed portion and the unexposed portion can be further increased.
- the photosensitive resin composition according to the present invention may be a simple mixture of the base generator represented by the chemical formula (1), one or more kinds of polymer precursors, and a solvent.
- a photosensitive resin composition may be prepared by blending a thermosetting component, a non-polymerizable binder resin other than the polymer precursor, and other components.
- Various general-purpose solvents can be used as a solvent for dissolving, dispersing or diluting the photosensitive resin composition.
- polyamic acid as a precursor, you may use the solution obtained by the synthesis reaction of polyamic acid as it is, and may mix other components there as needed.
- Examples of general-purpose solvents that can be used include ethers such as diethyl ether, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, and diethylene glycol dimethyl ether; ethylene glycol monomethyl ether, ethylene glycol mono Glycol monoethers (so-called cellosolves) such as ethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether; methyl ethyl ketone, acetone, methyl isobutyl ketone, cyclopentanone, cyclohexanone Ketones; ethyl acetate, butyl acetate, n-propyl acetate, i-propyl a
- polar solvents such as propylene glycol monomethyl ether, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl acetate, propylene glycol monomethyl ether acetate, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, ⁇ -butyrolactone, toluene, etc.
- Aromatic hydrocarbons and mixed solvents composed of these solvents are preferred.
- a compound having one or more ethylenically unsaturated bonds can be used.
- Aromatic vinyl compounds such as acrylate oligomers, epoxy (meth) acrylates, hydroxyl group-containing (meth) acrylates, and styrene can be exemplified.
- the use of an ethylenically unsaturated bond-containing compound having a tertiary amino group causes the carboxylic acid of the polyimide precursor to have an ionic bond.
- the photosensitive resin composition is formed, the contrast of the dissolution rate of the exposed area and the unexposed area is increased.
- a photoradical generator When using a photocurable compound having such an ethylenically unsaturated bond, a photoradical generator may be further added.
- the photo radical generator include benzoin such as benzoin, benzoin methyl ether, benzoin ethyl ether and benzoin isopropyl ether and alkyl ethers thereof; acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2 Acetophenones such as phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxyacetophenone, 1-hydroxycyclohexyl phenyl ketone and 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-propan-1-one
- Anthraquinones such as 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthra
- the photosensitive resin composition of the present invention may contain other photosensitive components that generate an acid or a base by light as an auxiliary role of the base generator of the present invention. good. Further, a base proliferating agent or a sensitizer may be added. Examples of the compound that generates an acid by light include photosensitive diazoquinone compounds having a 1,2-benzoquinone diazide or 1,2-naphthoquinone diazide structure. US Pat. Nos. 2,772,972, 2,797, No. 213, No. 3,669,658.
- photoacid generators such as triazine and derivatives thereof, sulfonic acid oxime ester compounds, sulfonic acid iodonium salts, and sulfonic acid sulfonium salts can be used.
- the compound that generates a base by light examples include 2,6-dimethyl-3,5-dicyano-4- (2′-nitrophenyl) -1,4-dihydropyridine, 2,6-dimethyl-3,5-diacetyl.
- Examples include -4- (2'-nitrophenyl) -1,4-dihydropyridine, 2,6-dimethyl-3,5-diacetyl-4- (2 ', 4'-dinitrophenyl) -1,4-dihydropyridine it can.
- a base proliferating agent that generates a base by a decomposition or rearrangement reaction by the action of a small amount of base generated from the base generator may be used in combination.
- the base proliferating agent include a compound having 9-fluorenylmethyl carbamate bond, 1,1-dimethyl-2-cyanomethylcarbamate bond ((CN) CH 2 C (CH 3 ) 2 OC (O) NR 2 ), Compounds having a paranitrobenzyl carbamate bond, compounds having a 2,4-dichlorobenzyl carbamate bond, and other urethane compounds described in paragraphs 0010 to 0032 of JP 2000-330270 A And urethane compounds described in paragraphs 0033 to 0060 of JP-A-2008-250111.
- the addition of a sensitizer may be effective when it is desired to make the base generator sufficiently use the energy of electromagnetic waves having a wavelength that passes through the polymer to improve the sensitivity.
- a sensitizer may be effective when it is desired to make the base generator sufficiently use the energy of electromagnetic waves having a wavelength that passes through the polymer to improve the sensitivity.
- the absorption of the polyimide precursor is also at a wavelength of 360 nm or more, the effect of adding a sensitizer is great.
- sensitizers include thioxanthone and derivatives thereof such as diethylthioxanthone, coumarins and derivatives thereof, ketocoumarin and derivatives thereof, ketobiscoumarin and derivatives thereof, cyclopentanone and derivatives thereof , Cyclohexanone and derivatives thereof, thiopyrylium salts and derivatives thereof, thioxanthene series, xanthene series and derivatives thereof.
- coumarin, ketocoumarin and derivatives thereof include 3,3′-carbonylbiscoumarin, 3,3′-carbonylbis (5,7-dimethoxycoumarin), and 3,3′-carbonylbis (7-acetoxycoumarin).
- thioxanthone and derivatives thereof include diethyl thioxanthone and isopropyl thioxanthone.
- various other organic or inorganic low molecular or high molecular compounds may be blended.
- dyes, surfactants, leveling agents, plasticizers, fine particles and the like can be used.
- the fine particles include organic fine particles such as polystyrene and polytetrafluoroethylene, inorganic fine particles such as colloidal silica, carbon, and layered silicate, and these may have a porous or hollow structure.
- the function or form includes pigments, fillers, fibers, and the like.
- the polymer precursor (solid content) is based on the entire solid content of the photosensitive resin composition from the viewpoint of film physical properties of the pattern to be obtained, particularly film strength and heat resistance. 30% by weight or more, preferably 50% by weight or more.
- the base generator represented by the chemical formula (1) is usually 0.1 to 95% by weight, preferably 0.5 to 60% by weight based on the solid content of the polymer precursor contained in the photosensitive resin composition. %. If it is less than 0.1% by weight, the solubility contrast between the exposed part and the unexposed part may not be sufficiently increased, and if it exceeds 95% by weight, the properties of the finally obtained cured resin will be reflected in the final product. It is hard to be done.
- the solid content of the polymer precursor contained in the photosensitive resin composition is usually 0.1 to 95, depending on the degree of curing.
- the content is in the range of 0.5% by weight, preferably 0.5 to 60% by weight.
- the base generator represented by the chemical formula (1) is a solid content of the polymer precursor contained in the photosensitive resin composition.
- it is usually contained in the range of 0.1 to 30% by weight, preferably 0.5 to 20% by weight.
- the polymer precursor (solid content) is usually 50.1 to 99.9% by weight, further 62.5% based on the total solid content of the photosensitive resin composition. It is preferably ⁇ 99.5% by weight.
- the base generator represented by the chemical formula (1) is usually 0.1 to 49.9% by weight, more preferably 0.5 to 37.5% by weight, based on the total solid content of the photosensitive resin composition. It is preferable that In addition, solid content of the photosensitive resin composition is all components other than a solvent, and a liquid monomer component is also contained in solid content.
- the blending ratio of optional components other than other solvents is preferably in the range of 0.1% by weight to 95% by weight with respect to the total solid content of the photosensitive resin composition.
- the amount is less than 0.1% by weight, the effect of adding the additive is hardly exhibited, and when it exceeds 95% by weight, the properties of the finally obtained resin cured product are not easily reflected in the final product.
- the photosensitive resin composition according to the present invention can be used in various coating processes and molding processes to produce films and molded articles having a three-dimensional shape.
- the resulting polyimide and polybenzoxazole have heat resistance, dimensional stability, and insulating properties.
- the 5% weight loss temperature measured in nitrogen of the polyimide and polybenzoxazole is preferably 250 ° C. or higher, more preferably 300 ° C. or higher.
- the 5% weight loss temperature is 300 ° C. or less, defects such as bubbles occur due to the decomposition gas generated in the solder reflow process. There is a fear.
- the glass transition temperature of the polyimide and polybenzoxazole obtained from the photosensitive resin composition of the present invention is preferably as high as possible from the viewpoint of heat resistance, but in applications where a thermoforming process is considered like an optical waveguide,
- the glass transition temperature is preferably about 120 ° C. to 450 ° C., more preferably about 200 ° C. to 380 ° C.
- E ′′ loss elastic modulus (tan ⁇ ) by dynamic viscoelasticity measurement when polyimide and polybenzoxazole obtained from the photosensitive resin composition can be formed into a film shape.
- E ′′ loss elastic modulus (tan ⁇ ) by dynamic viscoelasticity measurement when polyimide and polybenzoxazole obtained from the photosensitive resin composition can be formed into a film shape.
- E ′′ loss elastic modulus (tan ⁇ ) by dynamic viscoelasticity measurement when polyimide and polybenzoxazole obtained from the photosensitive resin composition can be formed into a film shape.
- E ′′ loss elastic modulus (tan ⁇ ) by dynamic viscoelasticity measurement when polyimide and polybenzoxazole obtained from the photosensitive resin composition can be formed into a film shape
- the linear thermal expansion coefficient is preferably 60 ppm or less, and more preferably 40 ppm or less.
- 20 ppm or less is more preferable from the viewpoint of adhesion and warpage of the substrate.
- the linear thermal expansion coefficient in this invention can be calculated
- TMA thermomechanical analyzer
- the heating rate is 10 ° C./min
- the tensile load is 1 g / 25,000 ⁇ m so that the weight per cross-sectional area of the evaluation sample is the same. 2 is obtained.
- the photosensitive resin composition can be obtained by a simple method of simply mixing the base generator represented by the chemical formula (1) with the polymer precursor. Excellent cost performance.
- the aromatic component-containing carboxylic acid constituting the base generator represented by the chemical formula (1) and the basic substance can be obtained at low cost, and the price as a photosensitive resin composition can be suppressed.
- the photosensitive resin composition according to the present invention can be applied to promote the reaction of a wide variety of polymer precursors to the final product by the base generator represented by the chemical formula (1).
- the structure of the resulting polymer can be selected from a wide range.
- the processing temperature required for reactions such as cyclization such as imidation from a polyimide precursor or polybenzoxazole precursor to the final product is reduced. Therefore, it is possible to reduce the load on the process and damage to the product due to heat.
- the base generator of the present invention that generates a base by irradiation and heating of electromagnetic waves includes a heating step in the step of obtaining a final product from the polymer precursor, the heating step can be used. The amount can be reduced, and the process can be effectively used.
- the photosensitive resin composition according to the present invention is the same as the photosensitive resin composition according to the present invention in printing ink, paint, sealing agent, adhesive, electronic material, optical circuit component, molding material, resist material, building material, light. It can be used for all known fields and products in which resin materials are used, such as modeling and optical members. It can be suitably used both for applications that are used by exposing the entire surface, such as paints, sealants, and adhesives, and for applications that form patterns such as permanent films and release films.
- the photosensitive resin composition according to the present invention can be used in a wide range of fields, products such as heat resistance, dimensional stability, and insulation, such as paints, printing inks, sealants, or adhesives, or It is suitably used as a forming material for display devices, semiconductor devices, electronic components, micro-electro-mechanical systems (MEMS), stereolithography, optical members, or building materials.
- a forming material for an electronic component a sealing material and a layer forming material can be used for a printed wiring board, an interlayer insulating film, a wiring covering film, and the like.
- a layer forming material or an image forming material can be used for a color filter, a film for flexible display, a resist material, an alignment film, and the like.
- a material for forming a semiconductor device a resist material, a layer forming material such as a buffer coat film, or the like can be used.
- a material for forming an optical component it can be used as an optical material or a layer forming material for a hologram, an optical waveguide, an optical circuit, an optical circuit component, an antireflection film, or the like.
- a building material it can use for a coating material, a coating agent, etc.
- a printed matter, a paint, a sealant, an adhesive, a display device, a semiconductor device, an electronic component, a microelectromechanical system, an optically shaped article, an optical member, or a building material is provided.
- the photosensitive resin composition according to the present invention can also be used as a pattern forming material.
- a photosensitive resin composition containing a polyimide precursor or a polybenzoxazole precursor is used as a pattern forming material (resist)
- the pattern formed thereby is a permanent film made of polyimide or polybenzoxazole.
- Functions as a component that imparts heat resistance and insulation such as color filters, flexible display films, electronic components, semiconductor devices, interlayer insulation films, wiring coating films, optical circuits, optical circuit components, antireflection films, etc. It is suitable for forming an optical member or an electronic member.
- the pattern forming method according to the present invention includes forming a coating film or a molded body made of the photosensitive resin composition according to the present invention, irradiating the coating film or the molded body with electromagnetic waves in a predetermined pattern, and after irradiation or It develops, after heating simultaneously with irradiation, changing the solubility of the said irradiation site
- the photosensitive resin composition according to the present invention is coated on some support to form a coating film, or a molded body is formed by a suitable molding method, and the coating film or molded body is formed into a predetermined pattern shape.
- the base generator represented by the above chemical formula (1) is isomerized and cyclized only in the exposed area by irradiating the film with electromagnetic waves and heating after irradiation or simultaneously with irradiation to generate a basic substance.
- the basic substance acts as a catalyst that promotes the reaction of the polymer precursor in the exposed area to the final product.
- a polymer precursor whose thermal curing temperature is lowered by the catalytic action of a base such as a polyimide precursor or a polybenzoxazole precursor
- a base such as a polyimide precursor or a polybenzoxazole precursor
- the part which wants to leave the pattern on the coating film or molded object of the photosensitive resin composition which combined the base generator represented by these is exposed.
- a basic substance is generated in the exposed portion, and the thermosetting temperature of that portion is selectively lowered.
- the exposed portion is thermally cured but the unexposed portion is heated at a processing temperature that is not thermally cured, and only the exposed portion is cured.
- the heating step for generating the basic substance and the heating step (post-exposure baking) for performing the reaction for curing only the exposed portion may be the same step or different steps.
- the unexposed portion is dissolved with a predetermined developer (such as an organic solvent or a basic aqueous solution) to form a pattern made of a thermoset. This pattern is further heated as necessary to complete thermosetting.
- a predetermined developer such as an organic solvent or a basic aqueous solution
- a polymer precursor that initiates the reaction by the catalytic action of a base such as a compound having an epoxy group or a cyanate group and a polymer
- first such a polymer precursor
- the part which wants to leave the pattern on the coating film or molded object of the photosensitive resin composition which combined the base generator represented by said Formula (1) is exposed.
- a basic substance is generated in the exposed area, the reaction of the compound having an epoxy group or cyanate group and a polymer in that area is initiated, and only the exposed area is cured.
- the heating step for generating the basic substance and the heating step (post-exposure bake) for performing the reaction for curing only the exposed portion may be the same step or different steps.
- thermosetting a desired negative two-dimensional resin pattern (general plane pattern) or a three-dimensional resin pattern (three-dimensionally shaped shape) is obtained.
- the photosensitive resin composition of the present invention comprises propylene glycol monomethyl ether, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl acetate, propylene glycol monomethyl ether acetate, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, ⁇ -butyrolactone
- a polar solvent such as toluene, aromatic hydrocarbons such as toluene, and a mixed solvent composed of these solvents
- immersion method, spray method, flexographic printing method, gravure printing method, screen printing method, spin coating method Apply to the surface of the substrate such as silicon wafer, metal substrate, ceramic substrate, resin film, etc.
- the thickness of the coating film is not particularly limited, but is preferably 0.5 to 50 ⁇ m, and more preferably 1.0 to 20 ⁇ m from the viewpoint of sensitivity and development speed.
- drying conditions for the applied coating include 80 to 100 ° C. and 1 to 20 minutes.
- This coating film is irradiated with electromagnetic waves through a mask having a predetermined pattern, and is exposed to a pattern. After heating, the unexposed portion of the film is developed and removed with an appropriate developer to obtain a desired pattern. A patterned film can be obtained.
- the exposure method and the exposure apparatus used in the exposure process are not particularly limited, and may be contact exposure or indirect exposure.
- a projector or a radiation source that can irradiate ultraviolet rays, visible rays, X-rays, electron beams, or the like can be used.
- the electromagnetic waves for deprotection may be the same as or different from the electromagnetic waves for generating the base.
- deprotection may be performed by irradiating with a long wavelength electromagnetic wave, and then isomerization may be performed for generating a base with the short wavelength electromagnetic wave.
- the amount of electromagnetic wave irradiation varies depending on the electromagnetic wave and is not particularly limited, and is appropriately adjusted.
- the heating temperature for heating before exposure or after exposure or simultaneously with exposure to deprotect the protecting group to generate a base is appropriately selected depending on the polymer precursor to be combined and the purpose, and is not particularly limited. Heating by the temperature (for example, room temperature) of the environment where the photosensitive resin composition is placed may be used, and in that case, a base is gradually generated. Further, since the base is also generated by heat generated as a by-product during irradiation with electromagnetic waves, heating may be performed substantially simultaneously with the heat generated as a by-product during irradiation with electromagnetic waves. From the viewpoint of increasing the reaction rate and efficiently generating amine, the heating temperature for generating the base is preferably 30 ° C. or higher, more preferably 60 ° C. or higher, still more preferably 100 ° C.
- the unexposed part may be cured by heating at 60 ° C. or higher, so that the suitable heating temperature is not limited to the above.
- a preferable heat treatment temperature range is appropriately selected depending on the type of the epoxy resin, but is usually about 100 ° C. to 150 ° C.
- the protective group may be deprotected only by heating before exposure.
- the heating for protecting group deprotection before the electromagnetic wave irradiation may be a coating film drying process or another heating process.
- the heating temperature a temperature capable of deprotection may be selected as appropriate, but it is preferably 50 ° C. to 180 ° C., and the time is preferably 10 seconds to 60 minutes.
- the coating film of the photosensitive resin composition according to the present invention is a post-exposure bake (Post) between the exposure process and the development process in order to physically accelerate the cross-linking reaction or to perform a reaction to cure only the exposed area. It is preferable to perform exposure bake (PEB).
- the PEB is a temperature at which the reaction rate of the curing reaction such as the imidization rate differs between the site where the base is present and the site where the base is not present without irradiation due to the action of the base generated by electromagnetic wave irradiation and heating. It is preferable to carry out with.
- the preferred heat treatment temperature range is usually about 60 ° C. to 200 ° C., more preferably 120 ° C. to 200 ° C.
- the heat treatment temperature When the heat treatment temperature is lower than 60 ° C., the imidization efficiency is poor, and it becomes difficult to cause a difference in the imidization ratio between the exposed portion and the unexposed portion under realistic process conditions. On the other hand, when the heat treatment temperature exceeds 200 ° C., imidization may proceed even in an unexposed portion where no amine is present, and it is difficult to cause a difference in solubility between the exposed portion and the unexposed portion.
- This heat treatment may be any method as long as it is a known method, and specific examples thereof include heating with a circulating oven in a nitrogen atmosphere or a hot plate, or the like, but is not particularly limited.
- a base is generated from the base generator by irradiation with electromagnetic waves and heating.
- the heating and the PEB process for generating the base may be the same process or separate processes.
- the developer used in the development step is not particularly limited as long as the solvent that changes the solubility of the irradiated site is used as the developer, and is appropriately selected according to the polymer precursor to be used, such as a basic aqueous solution or an organic solvent. It is possible to select.
- the basic aqueous solution is not particularly limited.
- TMAH tetramethylammonium hydroxide
- aqueous solution having a concentration of 0.01% by weight to 10% by weight, preferably 0.05% by weight to 5% by weight.
- the aqueous solution include methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine, and tetramethylammonium.
- the solute may be one type or two or more types, and may contain 50% or more of the total weight, more preferably 70% or more, and an organic solvent or the like as long as water is contained.
- the organic solvent is not particularly limited, but polar solvents such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, ⁇ -butyrolaclone, dimethylacrylamide, methanol, Alcohols such as ethanol and isopropanol, esters such as ethyl acetate and propylene glycol monomethyl ether acetate, ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone, other tetrahydrofuran, chloroform, acetonitrile and the like alone or Two or more types may be added in combination. After development, washing is performed with water or a poor solvent. Also in this case, alcohols such as ethanol and isopropyl alcohol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to water.
- a patterned high heat resistant resin layer is formed by heating at a temperature of 180 to 500 ° C., preferably 200 to 350 ° C. for several tens of minutes to several hours.
- reaction solution is concentrated, extracted with ethyl acetate, and purified by silica gel column chromatography (developing solvent: hexane / ethyl acetate 10/1 to 1/1) to generate a base represented by the following formula (11). 110 mg of agent (1) was obtained.
- Production Example 20 Synthesis of base generator
- Production Example 4 instead of using 2-hydroxy-4-methoxybenzaldehyde, synthesis of cinnamic acid and amidation of cinnamic acid were carried out in the same manner as in Production Example 4 using 5-chlorosalicylaldehyde.
- the compound represented by the following chemical formula (36) was obtained by purification by silica gel column chromatography (developing solvent: chloroform / methanol 100/1 to 50/1).
- Formula (37) in the same manner as Production Example 7, except that the compound represented by the following Chemical Formula (36) was used instead of the compound represented by the Formula (14).
- a base generator (20) was obtained.
- the extract was washed with a saturated aqueous ammonium chloride solution, dried over anhydrous magnesium sulfate, concentrated, and purified by silica gel column chromatography (developing solvent hexane / ethyl acetate 2/1 (volume ratio)). Subsequently, 15 mL of 1N aqueous sodium hydroxide solution was added and stirred overnight. After completion of the reaction, the precipitate was removed by filtration, concentrated hydrochloric acid was added dropwise to acidify the reaction solution, and the mixture was extracted with chloroform and concentrated to obtain 580 mg (3.25 mmol) of cinnamic acid derivative A.
- reaction mixture was dissolved in water, extracted with chloroform, and then washed with saturated aqueous sodium hydrogen carbonate solution, 1N hydrochloric acid and saturated brine. Thereafter, by purification by silica gel column chromatography (developing solvent: chloroform / methanol 100/1 to 10/1 (volume ratio)), 3.8 g (15.4 mmol) of a compound represented by the following chemical formula (40) was obtained. Obtained.
- a comparative base generator (1) represented by the following chemical formula (51) was obtained by purification by silica gel column chromatography (developing solvent: chloroform / methanol 100/1 to 10/1 (volume ratio)). It was.
- Base generators (1) to (28) were isomerized by irradiation at 2 J / cm 2 in terms of i-line.
- the base generator (1) gradually began to be deprotected from 60 ° C., and cyclized when heated to 100 ° C. or more, thereby generating a base.
- Table 2 shows the deprotection start temperature and the cyclization start temperature of each base generator.
- the base generator (15) having a protective group of o-nitrobenzyl group was isomerized simultaneously with deprotection by light irradiation. When the deprotected and isomerized sample was heated, it was cyclized when heated to 100 ° C. or higher, and generation of a base was confirmed accordingly.
- the base generator (15) having the o-nitrobenzyl protecting group did not undergo deprotection or cyclization only by heating.
- the comparative base generator (1) was isomerized by 2 J / cm 2 irradiation in terms of i-line.
- the isomerized sample was heated at a heating temperature of 10 ° C./min, even when heated to 160 ° C., deprotection and cyclization did not occur, and generation of a base could not be confirmed.
- R 5 to R 8 include a methoxy group, a hydroxyl group, a dimethoxy type represented by the formula (31), and an —O—X—O— moiety represented by the formula (28). It was confirmed that, among them, the type having a naphtholene ring-forming type represented by the formula (31) and the —OROR type represented by the formula (34) improve the sensitivity and are effective.
- Example 1 Preparation of photosensitive resin composition (1)
- a photosensitive resin composition (1) having the following composition was prepared using the base generator (1).
- the base generator (1) was dissolved in the epoxy resin in a solvent-free state.
- Epoxy resin manufactured by jER828 Japan Epoxy Resin
- Base generator (1) 15 parts by weight.
- Examples 2 to 28 Preparation of photosensitive resin compositions (2) to (28)
- Examples 2 to 28 were the same as in Example 1 except that base generators (2) to (28) were used in place of the base generator (1) in Example 1, respectively.
- Compositions (2) to (28) were prepared.
- two coating films of the photosensitive resin composition were prepared in the same manner as in Example 1.
- the coating film heated after exposure did not dissolve in the above mixed solution, and it became clear that the epoxy resin was cured. It was. On the other hand, the coating film heated without exposure was dissolved in the mixed solution.
- Example 29 Production of coating film using photosensitive resin composition (9)
- a photosensitive resin composition (9) containing a base generator (9) was spin-coated on glass to a final film thickness of 0.5 ⁇ m, and dried on a hot plate at 160 ° C. for 1 minute to obtain photosensitivity.
- Two coating films of the resin composition were obtained.
- About 1 sheet of the coating film of the photosensitive resin composition, 1 J / cm ⁇ 2 > whole surface exposure was performed with the high pressure mercury lamp using the manual exposure machine. Thereafter, each coating film was heated at 100 ° C. for 60 minutes.
- Example 1 Preparation of comparative photosensitive resin composition (1)
- a comparative photosensitive resin composition (1) was prepared in the same manner as in Example 1 except that the comparative base generator (2) was used instead of the base generator (1).
- the base generators (1) to (28) of the examples were dissolved in the epoxy resin in the absence of a solvent, but the comparative base generator (2) was suspended without being dissolved in the epoxy resin in the absence of a solvent.
- the precipitate was re-precipitated with diethyl ether, and the precipitate was dried at room temperature under reduced pressure for 17 hours to quantitatively obtain a polyamic acid (polyimide precursor (1)) having a weight average molecular weight of 10,000 as a white solid.
- a photosensitive resin composition (29) having the following composition was prepared using the base generator (4).
- the photosensitive resin composition (29) was spin-coated on glass so as to have a final film thickness of 1.0 ⁇ m, and dried on an 80 ° C. hot plate for 15 minutes to form three coating films of the photosensitive resin composition. Obtained. About one sheet of the coating film of the photosensitive resin composition, the whole surface exposure was performed at 10 J / cm 2 with a high-pressure mercury lamp using a manual exposure machine. About 1 sheet, it exposed in the pattern form at 10 J / cm ⁇ 2 > with the high pressure mercury lamp using the manual exposure machine. Thereafter, each coating film was heated at 160 ° C. for 10 minutes.
- the heated coating film When the heated coating film was immersed in a 9: 1 mixed solution of tetramethylammonium hydroxide 2.38 wt% and isopropanol, the heated coating film after exposure did not dissolve in NMP, and the polyimide precursor was cured. It became clear. On the other hand, the coating film heated without exposure was dissolved in NMP. Moreover, about the coating film exposed to pattern shape, the pattern which the exposure part did not melt
- Photosensitivity comprising 100 parts by weight of hexamethylene diisocyanate (manufactured by Kanto Chemical) as the isocyanate resin, 150 parts by weight of polytetrahydrofuran (manufactured by Aldrich) as the resin having a hydroxyl group, 10 parts by weight of the base generator (1) and 500 parts by weight of tetrahydrofuran.
- Resin composition (30) was prepared.
- the photosensitive resin composition (30) was spin-coated on chrome-plated glass so that the final film thickness was 0.5 ⁇ m, and dried on a hot plate at 60 ° C. for 5 minutes. One coating film was obtained. The obtained coating film was subjected to 1 J / cm 2 overall exposure with a high-pressure mercury lamp using a manual exposure machine. Then, when it heated at 120 degreeC for 10 minute (s) and cooled to room temperature, the low-elasticity solid substance was obtained and it confirmed that hardening with an isocyanate group and a hydroxyl group advanced.
- Example 32 Preparation of photosensitive resin composition (31)
- the mixture is dissolved in 500 parts by weight of tetrahydrofuran as a solvent to obtain a photosensitive resin composition.
- a product (31) was prepared.
- the photosensitive resin composition (31) was spin-coated on two chrome-plated glasses so that the final film thickness was 0.5 ⁇ m, respectively, and dried on an 80 ° C. hot plate for 5 minutes. Two coating films of the conductive resin composition were obtained. About one sheet of the coating film of the photosensitive resin composition, 10 J / cm 2 whole surface exposure was performed with a high-pressure mercury lamp using a manual exposure machine. Thereafter, each of the exposed coating film and the unexposed coating film was heated at 120 ° C. for 30 minutes. Infrared absorption spectrum measurement was performed on each sample before and after heating.
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Abstract
Description
例えば、高分子材料であるポリイミドは、耐熱性、寸法安定性、絶縁特性といった性能が有機物の中でもトップクラスの性能を示すため、電子部品の絶縁材料等へ広く適用され、半導体素子の中のチップコーティング膜や、フレキシブルプリント配線板の基材などとして盛んに利用されてきている。
また、近年、ポリイミドの有する課題を解決する為に、ポリイミドと類似の加工工程が適用される低吸水性で低誘電率を示すポリベンゾオキサゾールや、基板との密着性に優れるポリベンゾイミダゾール等も精力的に研究されている。
(1)ポリイミド前駆体にはパターン形成能力がなく、ポリイミド前駆体上に感光性樹脂をレジスト層として設けることによりパターンを形成する方法
(2)ポリイミド前駆体自身に感光性部位を結合や配位させて導入し、その作用により、パターンを形成する方法。または、ポリイミド前駆体に感光性成分を混合し樹脂組成物とし、その感光性成分の作用でパターンを形成する方法。
本発明に係る塩基発生剤においては、R9は、下記式(2-1)~下記式(2-6)で表わされる有機基よりなる群から選択される1種以上であることが、合成が容易で、加熱及び/又は電磁波の照射により脱保護可能な点から好ましい。
本発明に係るパターン形成方法は、上記感光性樹脂組成物を用いて塗膜又は成形体を形成し、当該塗膜又は成形体を、所定パターン状に電磁波を照射し、照射後又は照射と同時に加熱し、前記照射部位の溶解性を変化させた後、現像することを特徴とする。
本発明の感光性樹脂組成物は、含まれる式(1)で表される塩基発生剤が、従来用いられていた光塩基発生剤と比べて優れた感度を有するため、感度の高い感光性樹脂組成物である。本発明の感光性樹脂組成物は、電磁波の照射と加熱により、塩基発生剤由来の塩基による高分子前駆体の溶解性の変化により形状が良好なパターンを得ることができる。
さらに本発明の感光性樹脂組成物においては、酸と異なり塩基が金属の腐食を起こさないため、より信頼性の高い硬化膜を得ることが出来る。
また、パターン形成工程に加熱工程を含む場合、本発明の感光性樹脂組成物は、塩基の発生を促進させる加熱において、前記加熱工程を利用することが可能であり、当該加熱工程を利用する分、電磁波の照射量を少なくできる利点を有する。そのためこの様な加熱工程を含む工程で用いる場合、本発明の感光性樹脂組成物は、電磁波照射のみで塩基を発生させる従来の樹脂組成物と比べ、工程の合理化も可能となる。
なお、本発明において(メタ)アクリロイルとは、アクリロイル及び/又はメタクリロイルを意味し、(メタ)アクリルとは、アクリル及び/又はメタクリルを意味し、(メタ)アクリレートとは、アクリレート及び/又はメタクリレートを意味する。
また、本発明において、電磁波とは、波長を特定した場合を除き、可視及び非可視領域の波長の電磁波だけでなく、電子線のような粒子線、及び、電磁波と粒子線を総称する放射線又は電離放射線が含まれる。本明細書では、電磁波の照射を露光ともいう。なお、波長365nm、405nm、436nmの電磁波をそれぞれ、i線、h線、g線とも表記することがある。
<塩基発生剤>
本発明に係る塩基発生剤は、下記化学式(1)で表わされ且つ電磁波の照射と加熱により、塩基を発生することを特徴とする。
特に、加熱及び/又は電磁波の照射により脱保護可能な保護基でフェノール性水酸基を保護することにより、当該保護基を適宜選択することによって、組み合わせる化合物、例えば高分子前駆体や酸-塩基指示薬との相溶性が向上し、組み合わせ可能な化合物の範囲が増えたり、塩基発生剤の適用方法の範囲も拡大する。例えば、フェノール性水酸基と共存することが好ましくない高分子前駆体に対しても、樹脂組成物中に共存させて用いることが可能になる。
有機基としては、飽和又は不飽和アルキル基、飽和又は不飽和シクロアルキル基、アリール基、アラルキル基、及び飽和又は不飽和ハロゲン化アルキル基等が挙げられる。これらの有機基は、当該有機基中にヘテロ原子等の炭化水素基以外の結合や置換基を含んでよく、これらは、直鎖状でも分岐状でも良い。
R1及びR2における有機基は、通常、1価の有機基であるが、後述する環状構造を形成する場合や、生成するNHR1R2がジアミン等のアミド結合を形成可能なNH基を2つ以上有する塩基性物質の場合等には、2価以上の有機基となり得る。
環状構造は、飽和又は不飽和の脂環式炭化水素、複素環、及び縮合環、並びに当該脂環式炭化水素、複素環、及び縮合環よりなる群から選ばれる2種以上が組み合されてなる構造であっても良い。
前記R1及びR2の有機基中の炭化水素基以外の置換基としては、ハロゲン原子、水酸基、メルカプト基、スルフィド基、シアノ基、イソシアノ基、シアナト基、イソシアナト基、チオシアナト基、イソチオシアナト基、シリル基、シラノール基、アルコキシ基、アルコキシカルボニル基、カルバモイル基、チオカルバモイル基、ニトロ基、ニトロソ基、カルボキシル基、カルボキシラート基、アシル基、アシルオキシ基、スルフィノ基、スルホ基、スルホナト基、ホスフィノ基、ホスフィニル基、ホスホノ基、ホスホナト基、ヒドロキシイミノ基、飽和又は不飽和アルキルエーテル基、飽和又は不飽和アルキルチオエーテル基、アリールエーテル基、及びアリールチオエーテル基が好ましい。
高分子前駆体から最終生成物への反応に対する反応開始温度を低下させる等の触媒作用は、塩基性の大きい塩基性物質の方が触媒としての効果が大きく、より少量の添加で、より低い温度での最終生成物への反応が可能となる。一般に1級アミンよりは2級アミンの方が塩基性は高く、その触媒効果が大きい。
また、芳香族アミンよりも脂肪族アミンの方が塩基性が強いため好ましい。
本発明において、特に化学式(1)中のR3及びR4のうち少なくとも1つが、水素ではなく、上記特定の官能基である場合には、R3及びR4の両方共が水素の場合と比べて、本発明の塩基発生剤は、有機溶剤に対する溶解性を更に向上させたり、高分子前駆体との親和性を向上させることが可能である。例えば、R3及びR4のうち少なくとも1つが、アルキル基やアリール基等の有機基である場合、有機溶剤に対する溶解性が向上する。また、例えばR3及びR4のうち少なくとも1つがフッ素等のハロゲンである場合、フッ素等のハロゲンを含有する高分子前駆体との親和性が向上する。また、例えばR3及びR4のうち少なくとも1つがシリル基やシラノール基を有する場合、ポリシロキサン前駆体との親和性が向上する。このように、R3及び/又はR4を所望の有機溶剤や高分子前駆体に合わせて適宜置換基を導入することにより、所望の有機溶剤に対する溶解性や、所望の高分子前駆体との親和性を向上することが可能である。
R3及びR4における有機基は、通常、1価の有機基である。
ハロゲンとしては、フッ素、塩素、臭素などが挙げられる。
有機基としては、本発明の効果が損なわれない限り、特に制限がなく、飽和又は不飽和アルキル基、飽和又は不飽和シクロアルキル基、アリール基、アラルキル基、及び飽和又は不飽和ハロゲン化アルキル基、シアノ基、イソシアノ基、シアナト基、イソシアナト基、チオシアナト基、イソチオシアナト基、アルコキシ基、アルコキシカルボニル基、カルバモイル基、チオカルバモイル基、カルボキシル基、カルボキシラート基、アシル基、アシルオキシ基、ヒドロキシイミノ基等が挙げられる。これらの有機基は、当該有機基中にヘテロ原子等の炭化水素基以外の結合や置換基を含んでよく、これらは、直鎖状でも分岐状でも良い。
R5~R8における有機基は、通常、1価の有機基であるが、後述する環状構造を形成する場合等には、2価以上の有機基となり得る。
耐熱性の点から、有機基中の炭化水素基以外の結合としては、エーテル結合、チオエーテル結合、カルボニル結合、チオカルボニル結合、エステル結合、アミド結合、ウレタン結合、イミノ結合(-N=C(-R)-、-C(=NR)-:ここでRは水素原子又は有機基)、カーボネート結合、スルホニル結合、スルフィニル結合が好ましい。
中でも、R5~R8の有機基中の炭化水素基以外の置換基としては、ハロゲン原子、水酸基、メルカプト基、スルフィド基、シアノ基、イソシアノ基、シアナト基、イソシアナト基、チオシアナト基、イソチオシアナト基、シリル基、シラノール基、アルコキシ基、アルコキシカルボニル基、カルバモイル基、チオカルバモイル基、ニトロ基、ニトロソ基、カルボキシル基、カルボキシラート基、アシル基、アシルオキシ基、スルフィノ基、スルホ基、スルホナト基、ホスフィノ基、ホスフィニル基、ホスホノ基、ホスホナト基、ヒドロキシイミノ基、飽和又は不飽和アルキルエーテル基、飽和又は不飽和アルキルチオエーテル基、アリールエーテル基、及びアリールチオエーテル基が好ましい。
環状構造は、飽和又は不飽和の脂環式炭化水素、複素環、及び縮合環、並びに当該脂環式炭化水素、複素環、及び縮合環よりなる群から選ばれる2種以上が組み合されてなる構造であっても良い。例えば、R5~R8は、それらの2つ以上が結合して、R5~R8が結合しているベンゼン環の原子を共有してナフタレン、アントラセン、フェナントレン、インデン等の縮合環を形成していても良い。
また、R5~R8としては、それらの2つ以上が結合して、R5~R8が結合しているベンゼン環の原子を共有してナフタレン、アントラセン、フェナントレン、インデン等の縮合環を形成している場合も、吸収波長が長波長化する点から好ましい。
本発明においては、高感度化の観点から、上記Xはヘテロ原子を含んでいてもよく、置換基を有していてもよい炭素数1~20の直鎖、分岐又は環状の飽和又は不飽和脂肪族、或いは芳香族炭化水素基、ヘテロ原子を含んでいてもよく、置換基を有していてもよいケイ素数1~20の直鎖、分岐又は環状のケイ素-ケイ素二重結合を含んでいてもよいケイ化水素基、エーテル結合、チオエーテル結合、カルボニル結合、チオカルボニル結合、エステル結合、アミド結合、ウレタン結合、カーボネート結合、及びスルホニル結合、並びにこれらの組み合わせよりなる群から選ばれる連結基であることが好ましい。
上記Xにおける直鎖、分岐、又は環状の不飽和脂肪族炭化水素基は、ヘテロ原子を含んでいてもよく、置換基を有していてもよい。当該不飽和脂肪族炭化水素基としては、例えば、ビニレン基等が挙げられる。
また、上記飽和脂肪族炭化水素基、及び不飽和脂肪族炭化水素基が有していてもよい置換基としては、上記R5~R8の有機基中の炭化水素基以外の置換基と同様であってよい。
また、上記飽和脂肪族炭化水素基、及び不飽和脂肪族炭化水素基がヘテロ原子を含む場合としては、飽和脂肪族炭化水素基、又は不飽和脂肪族炭化水素基に、エーテル結合、チオエーテル結合、カルボニル結合、チオカルボニル結合、エステル結合、アミド結合、ウレタン結合、カーボネート結合、スルホニル結合等を含む場合が挙げられる。
上記Xにおける芳香族炭化水素基は、ヘテロ原子を含んでいてもよく、置換基を有していてもよい。当該芳香族炭化水素基としては、例えば、フェニレン基、ナフチレン基等が挙げられる。
また、上記芳香族炭化水素基が有していてもよい置換基としては、上記飽和脂肪族炭化水素基が有していてもよい置換基と同様のものが挙げられる。
また、上記芳香族炭化水素基が、ヘテロ原子を含む場合(複素環)、その具体例としては、フラン、チオフェン等が挙げられる。
ここで、本発明において、ケイ化水素基とは、2価の場合が-(SiH2)n-、1価の場合が-(SiH2)n-Hのケイ素と水素のみからなる基であり、nは1以上の自然数である。
また、当該ケイ化水素基がヘテロ原子を含む場合、Xが含む結合としては、上記飽和脂肪族炭化水素基において例示したものを挙げることができる。
例えば、Zが炭素原子である場合に、n個のRa及びRbのうちのいずれか2個が結合して脂環式炭化水素や複素環を形成してもよい。また、Zが炭素-炭素二重結合である場合に、Ra及びRbはZの炭素-炭素二重結合とともに環状構造を形成し、芳香族環を形成していてもよい。
また、Zがケイ素-ケイ素二重結合である場合に、Ra及びRbはZのケイ素-ケイ素二重結合とともに炭素原子及び/又はケイ素原子により環状構造を形成していてもよく、当該環状構造は、更に、ケイ素-ケイ素二重結合を含んでいても良い。
また、Ra及びRbのうちのハロゲン原子及び有機基は、上記R5~R8において説明したのと同様であってよい。
nは1~10の整数を表し、好ましくは1~6の整数、更に好ましくは1~3である。
本発明においては、高感度化の観点から、上記Rcはヘテロ原子を含んでいてもよく、置換基を有していてもよい炭素数1~20の直鎖、分岐又は環状の飽和又は不飽和脂肪族、或いは芳香族炭化水素基、ヘテロ原子を含んでいてもよく、置換基を有していてもよいケイ素数1~20の直鎖、分岐又は環状のケイ素-ケイ素二重結合を含んでいてもよいケイ化水素基、カルボニル結合、チオカルボニル結合、スルホニル結合、スルフィニル結合、及びアゾ結合よりなる群から選ばれる連結基であることが好ましい。
耐熱性の点から、上記Rcはヘテロ原子を含んでいてもよく、置換基を有していてもよい炭素数1~20の直鎖、分岐又は環状の飽和又は不飽和脂肪族、或いは芳香族炭化水素基、ヘテロ原子を含んでいてもよく、置換基を有していてもよいケイ素数1~20の直鎖、分岐又は環状のケイ素-ケイ素二重結合を含んでいてもよいケイ化水素基、カルボニル結合、チオカルボニル結合、スルホニル結合、及びスルフィニル結合よりなる群から選ばれる連結基であることが好ましい。これらは、上記式(3)におけるXと同様のものを用いることができる。
中でも、感度と溶剤溶解性の点から、Rdとしては、有機基が好ましい。
R10、R11、R12は、水素、または、置換または無置換のアルキル基、アリル基、アリール基が好ましい。特に原料入手の容易性から、水素であることが好ましい。また、1級、2級、3級のアミノ基や、水酸基などの活性水素を有する置換基は化合物の安定性の点から含まないことが好ましい。
一方、保護するためのビニルエーテル化合物と水酸基の反応は、一般に上記式中のR13において、酸素原子と結合する炭素が1級炭素<2級炭素<3級炭素の置換基の順で高い反応率を示す傾向がある。
そのため、当該塩基発生剤と組み合わせる化合物と使用方法により、脱保護するための加熱温度が選択され、その加熱温度から保護基を適宜選択することが好ましい。
なお、本発明において、エーテル酸素に結合する炭素原子(式(2-1)のR13において酸素原子と結合している炭素原子)、又は式(2-1)の有機基を誘導するビニルエーテル化合物のビニル基に結合したエーテル酸素に結合するもう一方の炭素原子について、第1級炭素原子とは、結合している他の炭素原子が0個又は1個の場合をいい、第2級炭素原子とは、結合している他の炭素原子が2個の場合をいい、第3級炭素原子とは、結合している他の炭素原子が3個の場合をいう。
カーボネート系保護基としては、例えば、tert-ブトキシカルボニル基(Boc-)、ベンジルオキシカルボニル基(Z-)、9-フルオレニルメトキシカルボニル(Fmoc-)、1,1-ジオキソベンゾ[b]チオフェン-2-イルメトキシカルボニル基(Bsmoc-)、2-(4-ニトロフェニルスルホニル)エトキシカルボニル基(Nsc-)、p-メトキシベンジルオキシカルボニル基(Z(OMe-))、アリルオキシカルボニル基(Alloc-)、2,2,2-トリクロロエトキシカルボニル基(Troc-)等が挙げられる。
シリルエーテル系保護基としては例えば、トリメチルシリル基(TMS-)、tert-ブチルジメチルシリル基(TBDMS-)、tert-ブチルジフェニルシリル基(TBDPS-)、トリイソプロピルシリル基(TIPS-)等が挙げられる。
式(2-4)で表されるエステル系保護基としては、例えば、アセチル基(Ac-)、ピバロイル基、ベンゾイル基等が挙げられる。
式(2-5)で表されるエーテル系保護基としては、例えば、置換基を有していても良いベンジル基等が挙げられる。
カルバメート系保護基としては、例えば、ベンジルイソシアネート等が挙げられる。
前記式(2-6)のRとしては特に限定されないが、例えば、ベンジル基等が挙げられる。
本発明において、x%重量減少温度とは、熱重量分析装置を用いて重量減少を測定した時に、サンプルの重量が初期重量からx%減少した時点(すなわち、サンプル重量が初期の(100-x)%となった時点)の温度である。
加熱を行う際には、低温で保護基の脱保護を行い、より高温で塩基を発生させるようにしても良い。
また、加熱と電磁波照射を同時に又は加熱と電磁波照射を交互に行うことより脱保護を行っても良い。
更に、露光前に加熱を行い脱保護してもよい。保護基の種類によっては保護基を導入することで、吸収波長が短波長化するなどして塩基発生剤の感度が悪くなることがある。このような場合、電磁波照射前の加熱により予め保護基を脱保護し、電磁波を照射することにより、電磁波照射時の感度を向上させることができる。
なお、保護基の脱保護条件は、組成物中で共存する成分により変化し得る。例えば、他の光酸発生剤や光塩基発生剤が含まれる場合、光照射によって発生した酸・塩基の影響で、露光後の加熱温度が変化する場合がある。
各置換基を導入した桂皮酸の合成は、対応する置換基を有するヒドロキシベンズアルデヒドにwittig反応または、Knoevenagel反応、又はPerkin反応を行うことで合成できる。中でも、wittig反応はトランス体が選択的に得られやすい点から好ましい。尚、各置換基を導入したヒドロキシベンズアルデヒドの合成は、対応する置換基を有するフェノールにDuff反応やVilsmeier-Haack反応を行う、またはジヒドロキシベンズアルデヒドにWilliamson反応などの一般的なエーテル合成手法を用いることで合成できる。
また、カーボネート系保護基を用いて保護する場合には、2-ヒドロキシ桂皮酸アミドとカーボネート系保護基の導入試薬(たとえばジーt-ブチルジカルボナートや、塩化ベンジルオキシカルボニル、N-(9-フルオレニルメトキシカルボニルオキシ)コハク酸イミドなど)により合成できる。
シリルエーテル系保護基を用いて保護する場合には、イミダゾール等の塩基触媒下、ジメチルホルムアミド中、2-ヒドロキシ桂皮酸アミドとシリルエーテル系保護基の導入試薬(たとえばクロロトリメチルシラン、tert-ブチルジメチルクロロシラン、tert-ブチルジフェニルクロロシランなど)により合成できる。
エステル系保護基を用いて保護する場合には、トリエチルアミン等の塩基触媒下、2-ヒドロキシ桂皮酸アミドと酸塩化物または酸無水物により合成できる。
エーテル系保護基を用いて保護する場合には、水素化ナトリウム等の強塩基の存在下、2-ヒドロキシ桂皮酸アミドとハロゲン化物(たとえばベンジルクロライドなど)により合成できる。
カルバメート系保護基を用いて保護する場合には2-ヒドロキシ桂皮酸アミドとイソシアネート(たとえばベンジルイソシアネートなど)により合成できる。
例えば、光塩基発生剤と酸-塩基指示薬とを少なくとも含む画像形成層を、基材上に被覆又は基材に含浸させてなる画像形成媒体において、画像形成層を露光すると、前記光塩基発生剤が、酸-塩基指示薬と反応する塩基を生成し、画像が形成されることを特徴とする画像形成媒体のような表示装置などにも応用することができる。
本発明に係る感光性樹脂組成物は、塩基性物質によって又は塩基性物質の存在下での加熱によって最終生成物への反応が促進される高分子前駆体、及び、前記本発明に係る下記化学式(1)で表わされ且つ電磁波の照射と加熱により、塩基を発生することを特徴とする、塩基発生剤を含有することを特徴とする。
前記高分子前駆体は、前記塩基発生剤から発生した塩基性物質の作用によって最終生成物への反応が促進される。
塩基発生剤及び高分子前駆体としては、1種単独で用いても良いし、2種以上混合して用いても良い。
本発明の感光性樹脂組成物に用いる高分子前駆体とは、反応により最終的に目的の物性を示す高分子となる物質を意味し、当該反応には分子間反応及び分子内反応がある。高分子前駆体自体は、比較的低分子の化合物であっても高分子化合物であってもよい。
また、本発明の高分子前駆体は、塩基性物質によって又は塩基性物質の存在下での加熱によって最終生成物への反応が促進される化合物である。ここで、高分子前駆体が、塩基性物質によって又は塩基性物質の存在下での加熱によって最終生成物への反応が促進される態様には、高分子前駆体が塩基性物質の作用のみによって最終生成物に変化する態様のみならず、塩基性物質の作用によって高分子前駆体の最終生成物への反応温度が、塩基性物質の作用がない場合に比べて低下するような態様が含まれる。
このような塩基性物質の存在の有無により反応温度差が出来る場合には、反応温度差を利用して、塩基性物質と共存する高分子前駆体のみが最終生成物へと反応する適切な温度で加熱することにより、塩基性物質と共存する高分子前駆体のみが最終生成物へと反応し、現像液等の溶媒への溶解性が変化する。従って、塩基性物質の存在の有無によって、高分子前駆体の前記溶媒への溶解性を変化させることが可能となり、ひいては当該溶媒を現像液として用いて現像によるパターニングが可能になる。
分子間反応により目的の高分子となる高分子前駆体としては、反応性置換基を有し重合反応をする化合物及び高分子、又は、分子間に結合を形成する反応(架橋反応)をする化合物及び高分子がある。当該反応性置換基としては、エポキシ基、オキセタン基、チイラン基、イソシアネート基、ヒドロキシル基、シラノール基等が挙げられる。また、高分子前駆体には、分子間で加水分解・重縮合する化合物も含まれ、反応性置換基には、ポリシロキサン前駆体の-SiX(ここで、Xはアルコキシ基、アセトキシ基、オキシム基、エノキシ基、アミノ基、アミノキシ基、アミド基、及びハロゲンよりなる群から選択される加水分解性基)も挙げられる。
反応性置換基を有し重合反応をする高分子としては、例えば、2個以上のエポキシ基を有する高分子(エポキシ樹脂)、2個以上のオキセタン基を有する高分子、及び2個以上のチイラン基を有する高分子が挙げられる。下記に特にエポキシ基を有する化合物及び高分子について具体的に説明するが、オキセタン基、チイラン基を有する化合物及び高分子についても同様に用いることが可能である。
上記1個以上のエポキシ基を有する化合物及び高分子としては、分子内に1個以上のエポキシ基を有するものであれば特に制限なく、従来公知のものを使用できる。
前記塩基発生剤は、一般的には分子内に1個以上のエポキシ基を有する化合物の硬化触媒としての機能も有する。
また、重量平均分子量3,000~100,000のポリマー側鎖に上記官能基を導入したものを用いることが好ましい。3,000未満では膜強度の低下及び硬化膜表面にタック性が生じ、不純物等が付着しやすくなる恐れがある。また、100,000より大きいと粘度が増大する恐れがあり好ましくない。
分子間で架橋反応をする高分子としては、例えば、分子内に2個以上のイソシアネート基を有する高分子(イソシアネート樹脂)と分子内に2個以上のヒドロキシル基を有する高分子(ポリオール)の組み合わせが挙げられる。
また、分子間で架橋反応をする化合物と高分子の組み合わせを用いても良い。例えば、分子内に2個以上のイソシアネート基を有する高分子(イソシアネート樹脂)と分子内に2個以上のヒドロキシル基を有する化合物の組み合わせ、及び、分子内に2個以上のイソシアネート基を有する化合物と分子内に2個以上のヒドロキシル基を有する高分子(ポリオール)の組み合わせ等が挙げられる。
イソシアネート基をもつ化合物及び高分子としては、分子内に2個以上のイソシアネート基を有するものであれば特に制限なく、公知のものを使用できる。このような化合物としては、p-フェニレンジイソシアネート、2,4-トルエンジイソシアネート、2,6-トルエンジイソシアネート、1,5-ナフタレンジイソシアネート、ヘキサメチレンジイソシアネート等に代表される低分子化合物の他に、オリゴマー、重量平均分子分子量3,000以上のポリマーの側鎖又は末端にイソシアネート基が存在する高分子を用いてもよい。
前記イソシアネート基を持つ化合物及び高分子は、通常、分子内にヒドロキシル基を持つ化合物と組み合わせて用いられる。このようなヒドロキシル基を有する化合物としては、分子内に2個以上のヒドロキシル基を有するものであれば特に制限なく、公知のものを使用できる。このような化合物としては、エチレングリコール、プロピレングリコール、グリセリン、ジグリセリン、ペンタエリスリトール等の低分子化合物の他に、重量平均分子量3,000以上のポリマーの側鎖又は末端にヒドロキシル基が存在する高分子を用いてもよい。
分子間で加水分解・重縮合する化合物としては、たとえばポリシロキサン前駆体が挙げられる。
ポリシロキサン前駆体としては、YnSiX(4-n)(ここで、Yは置換基を有していても良いアルキル基、フルオロアルキル基、ビニル基、フェニル基、または水素を示し、Xはアルコキシ基、アセトキシ基、オキシム基、エノキシ基、アミノ基、アミノキシ基、アミド基、及びハロゲンよりなる群から選択される加水分解性基を示す。nは0~3までの整数である。) で示される有機ケイ素化合物及び当該有機ケイ素化合物の加水分解重縮合物が挙げられる。中でも、上記式においてnが0~2であるものが好ましい。また、シリカ分散オリゴマー溶液の調製がし易く入手も容易な点から、上記加水分解性基としては、アルコキシ基であるものが好ましい。
上記有機ケイ素化合物としては、特に制限なく、公知のものを使用できる。例えば、トリメトキシシラン、トリエトキシシラン、メチルトリクロルシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、メチルトリイソプロポキシシラン、メチルトリt-ブトキシシラン、エチルトリブロムシラン、エチルトリメトキシシラン、エチルトリエトキシシラン、n-プロピルトリエトキシシラン、n-ヘキシルトリメトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、テトラメトキシシラン、テトラエトキシシラン、テトラブトキシシラン、ジメトキシジエトキシシラン、ジメチルジクロルシラン、ジメチルジメトキシシラン、ジフェニルジメトキシシラン、ビニルトリメトキシシラン、トリフルオロプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジエトキシシラン、γ-グリシドキシプロピルトリメトキシシラン、γ-メタアクリロキシプロピルメチルジメトキシシラン、γ-アミノプロピルメチルジメトキシシラン、γ-メルカプトプロピルメチルジエトキシシラン、γ-メルカプトプロピルトリメトキシシラン、β-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、フッ素系シランカップリング剤として知られたフルオロアルキルシラン、および、それらの加水分解縮合物もしくは共加水分解縮合物;並びに、それらの混合物を挙げることができる。
分子内閉環反応によって最終的に目的の物性を示す高分子となる高分子前駆体としてはポリイミド前駆体、ポリベンゾオキサゾール前駆体等がある。これらの前駆体は2種類以上の別々に合成した高分子前駆体の混合物でもよい。
以下、本発明の好ましい高分子前駆体であるポリイミド前駆体とポリベンゾオキサゾール前駆体について説明するが、本発明はこれらに限定されるものではない。
ポリイミド前駆体としては、下記化学式(6)で表される繰り返し単位を有するポリアミック酸が好適に用いられる。
m-フェニレンジアミン、o-フェニレンジアミン、3,3’-ジアミノジフェニルエーテル、3,4’-ジアミノジフェニルエーテル、4,4’-ジアミノジフェニルエーテル、3,3’-ジアミノジフェニルスルフィド、3,4’-ジアミノジフェニルスルフィド、4,4’-ジアミノジフェニルスルフィド、3,3’-ジアミノジフェニルスルホン、3,4’-ジアミノジフェニルスルホン、4,4’-ジアミノジフェニルスルホン、3,3’-ジアミノベンゾフェノン、4,4’-ジアミノベンゾフェノン、3,4’-ジアミノベンゾフェノン、3,3’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルメタン、3,4’-ジアミノジフェニルメタン、2,2-ジ(3-アミノフェニル)プロパン、2,2-ジ(4-アミノフェニル)プロパン、2-(3-アミノフェニル)-2-(4-アミノフェニル)プロパン、2,2-ジ(3-アミノフェニル)-1,1,1,3,3,3-ヘキサフルオロプロパン、2,2-ジ(4-アミノフェニル)-1,1,1,3,3,3-ヘキサフルオロプロパン、2-(3-アミノフェニル)-2-(4-アミノフェニル)-1,1,1,3,3,3-ヘキサフルオロプロパン、1,1-ジ(3-アミノフェニル)-1-フェニルエタン、1,1-ジ(4-アミノフェニル)-1-フェニルエタン、1-(3-アミノフェニル)-1-(4-アミノフェニル)-1-フェニルエタン、1,3-ビス(3-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、1,4-ビス(3-アミノフェノキシ)ベンゼン、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(3-アミノベンゾイル)ベンゼン、1,3-ビス(4-アミノベンゾイル)ベンゼン、1,4-ビス(3-アミノベンゾイル)ベンゼン、1,4-ビス(4-アミノベンゾイル)ベンゼン、1,3-ビス(3-アミノ-α,α-ジメチルベンジル)ベンゼン、1,3-ビス(4-アミノ-α,α-ジメチルベンジル)ベンゼン、1,4-ビス(3-アミノ-α,α-ジメチルベンジル)ベンゼン、1,4-ビス(4-アミノ-α,α-ジメチルベンジル)ベンゼン、1,3-ビス(3-アミノ-α,α-ジトリフルオロメチルベンジル)ベンゼン、1,3-ビス(4-アミノ-α,α-ジトリフルオロメチルベンジル)ベンゼン、1,4-ビス(3-アミノ-α,α-ジトリフルオロメチルベンジル)ベンゼン、1,4-ビス(4-アミノ-α,α-ジトリフルオロメチルベンジル)ベンゼン、2,6-ビス(3-アミノフェノキシ)ベンゾニトリル、2,6-ビス(3-アミノフェノキシ)ピリジン、4,4’-ビス(3-アミノフェノキシ)ビフェニル、4,4’-ビス(4-アミノフェノキシ)ビフェニル、ビス[4-(3-アミノフェノキシ)フェニル]ケトン、ビス[4-(4-アミノフェノキシ)フェニル]ケトン、ビス[4-(3-アミノフェノキシ)フェニル]スルフィド、ビス[4-(4-アミノフェノキシ)フェニル]スルフィド、
具体例としては、2,2’-ジメチル-4,4’-ジアミノビフェニル、2,2’-ジトリフルオロメチル-4,4’-ジアミノビフェニル、3,3’-ジクロロ-4,4’-ジアミノビフェニル、3,3’-ジメトキシ-4,4’-ジアミノビフェニル、3,3’-ジメチル-4,4’-ジアミノビフェニル等が挙げられる。
ここで、選択されるジアミンは耐熱性の観点より芳香族ジアミンが好ましいが、目的の物性に応じてジアミンの全体の60モル%、好ましくは40モル%を超えない範囲で、脂肪族ジアミンやシロキサン系ジアミン等の芳香族以外のジアミンを用いても良い。
このようにして合成されるポリイミド前駆体は、最終的に得られるポリイミドに耐熱性及び寸法安定性を求める場合には、芳香族酸成分及び/又は芳香族アミン成分の共重合割合ができるだけ大きいことが好ましい。具体的には、イミド構造の繰り返し単位を構成する酸成分に占める芳香族酸成分の割合が50モル%以上、特に70モル%以上であることが好ましく、イミド構造の繰り返し単位を構成するアミン成分に占める芳香族アミン成分の割合が40モル%以上、特に60モル%以上であることが好ましく、全芳香族ポリイミドであることが特に好ましい。
本発明に用いられるポリベンゾオキサゾール前駆体としては、下記化学式(8)で表される繰り返し単位を有するポリアミドアルコールが好適に用いられる。
露光波長に対してポリイミド前駆体やポリベンゾオキサゾール前駆体等の高分子前駆体の透過率が高いということは、それだけ、電磁波のロスが少ないということであり、高感度の感光性樹脂組成物を得ることができる。
本発明に係る感光性樹脂組成物は、前記化学式(1)で表される塩基発生剤と、1種類以上の高分子前駆体と、溶媒の単純な混合物であってもよいが、さらに、光又は熱硬化性成分、高分子前駆体以外の非重合性バインダー樹脂、その他の成分を配合して、感光性樹脂組成物を調製してもよい。
光によって酸を発生させる化合物としては、1,2-ベンゾキノンジアジドあるいは1,2-ナフトキノンジアジド構造を有する感光性ジアゾキノン化合物があり、米国特許明細書第2,772,972号、第2,797,213号、第3,669,658号に提案されている。また、トリアジンやその誘導体、スルホン酸オキシムエステル化合物、スルホン酸ヨードニウム塩、スルホン酸スルフォニウム塩等、公知の光酸発生剤を用いることができる。光によって塩基を発生させる化合物としては、例えば2,6-ジメチル-3,5-ジシアノ-4-(2’-ニトロフェニル)-1,4-ジヒドロピリジン、2,6-ジメチル-3,5-ジアセチル-4-(2’-ニトロフェニル)-1,4-ジヒドロピリジン、2,6-ジメチル-3,5-ジアセチル-4-(2’,4’-ジニトロフェニル)-1,4-ジヒドロピリジンなどが例示できる。
特に、ポリイミド前駆体の吸収が360nm以上の波長にもある場合には、増感剤の添加による効果が大きい。増感剤と呼ばれる化合物の具体例としては、チオキサントン及び、ジエチルチオキサントンなどのその誘導体、クマリン系及び、その誘導体、ケトクマリン及び、その誘導体、ケトビスクマリン、及びその誘導体、シクロペンタノン及び、その誘導体、シクロヘキサノン及び、その誘導体、チオピリリウム塩及び、その誘導体、チオキサンテン系、キサンテン系及び、その誘導体などが挙げられる。
これらは、塩基発生剤との組み合わせによって、特に優れた効果を発揮する為、塩基発生剤の構造によって最適な増感作用を示す増感剤が適宜選択される。
前記化学式(1)で表される塩基発生剤は、感光性樹脂組成物に含まれる高分子前駆体の固形分に対し、通常、0.1~95重量%、好ましくは0.5~60重量%の範囲内で含有させる。0.1重量%未満であると露光部と未露光部の溶解性コントラストを十分に大きくできない恐れがあり、95重量%を超えると最終的に得られる樹脂硬化物の特性が最終生成物に反映されにくい。
エポキシ系化合物と組み合わせる場合など、硬化剤として用いられる場合には、硬化の程度にもよるが、感光性樹脂組成物に含まれる高分子前駆体の固形分に対し、通常、0.1~95重量%、好ましくは0.5~60重量%の範囲内で含有させる。
一方、硬化促進剤として用いられる場合には、少量の添加で硬化が可能となり、前記化学式(1)で表される塩基発生剤は、感光性樹脂組成物に含まれる高分子前駆体の固形分に対し、通常、0.1~30重量%、好ましくは0.5~20重量%の範囲内で含有させることが好ましい。
なお、感光性樹脂組成物の固形分とは、溶剤以外の全成分であり、液状のモノマー成分も固形分に含まれる。
化学式(1)で表される塩基発生剤を構成する芳香族成分含有カルボン酸、並びに、塩基性物質は安価に入手することが可能で感光性樹脂組成物としての価格も抑えられる。
本発明に係る感光性樹脂組成物は、上記化学式(1)で表される塩基発生剤により、多種多様な高分子前駆体の最終生成物への反応促進に適用することができ、最終的に得られる高分子の構造を広範囲から選択することができる。
また、電磁波の照射により発生したアミンなどの塩基性物質の触媒効果により、例えばポリイミド前駆体やポリベンゾオキサゾール前駆体から最終生成物へのイミド化などの環化等の反応に要する処理温度を低減できる為、プロセスへの負荷や製品への熱によるダメージを低減することが可能である。
さらに、電磁波の照射と加熱により塩基を発生する本発明の塩基発生剤は、高分子前駆体から最終生成物を得る工程に加熱工程が含まれる場合、当該加熱工程を利用できるため、電磁波の照射量を低減することが可能であり、工程の有効利用も可能である。
本発明に係るパターン形成方法は、前記本発明に係る感光性樹脂組成物からなる塗膜又は成形体を形成し、当該塗膜又は成形体を、所定パターン状に電磁波を照射し、照射後又は照射と同時に加熱し、前記照射部位の溶解性を変化させた後、現像することを特徴とする。
次に、所定の現像液(有機溶媒や塩基性水溶液等)で未露光部を溶解して熱硬化物からなるパターンを形成する。このパターンを、更に必要に応じ加熱して熱硬化を完結させる。以上の工程によって、通常ネガ型の所望の2次元樹脂パターン(一般的な平面パターン)又は3次元樹脂パターン(立体的に成形された形状)が得られる。
例えば、エポキシ樹脂の場合、好ましい熱処理の温度の範囲は、エポキシ樹脂の種類により適宜選択されるが、通常100℃~150℃程度である。
なお、露光前に加熱して保護基の脱保護のみを行っても良い。当該電磁波照射前の保護基脱保護のための加熱は、塗膜の乾燥工程であっても良いし、他の加熱工程であっても良い。この場合、加熱温度としては、脱保護が可能な温度を適宜選択すればよいが、50℃~180℃が好ましく、時間は10秒以上60分以下が好ましい。
この熱処理は、公知の方法であればどの方法でもよく、具体的に例示すると、空気、又は窒素雰囲気下の循環オーブン、又はホットプレートによる加熱等が挙げられるが、特に限定されない。
本発明において、電磁波の照射と加熱により塩基発生剤から塩基が生ずるが、この塩基を発生させるための加熱とPEB工程は同一の工程としてもよいし、別の工程としてもよい。
現像工程に用いられる現像液としては、前記照射部位の溶解性が変化する溶剤を現像液として用いれば、特に限定されず、塩基性水溶液、有機溶剤など、用いられる高分子前駆体に合わせて適宜選択することが可能である。
溶質は、1種類でも2種類以上でも良く、全体の重量の50%以上、さらに好ましくは70%以上、水が含まれていれば有機溶媒等を含んでいても良い。
また、以下に示す装置を用いて各測定、実験を行った。
1H NMR測定:日本電子(株)製、JEOL JNM-LA400WB
手動露光:大日本科研製、MA-1100
吸光度測定:(株)島津製作所製、紫外可視分光光度計UV-2550
塗膜の加熱:アズワン(株)製、HOT PLATE EC-1200(本実施例中、ホットプレートと記載することがある)
窒素雰囲気下、100mL三口フラスコ中、o-クマリン酸(東京化成工業(株)製)0.50g(3.1mmol)を脱水テトラヒドロキシフラン40mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(東京化成工業(株)製)0.59g(3.1mmol,1.0eq)を加えた。氷浴下で、ピペリジン(東京化成(株)製)0.3ml(3.1mmol,1.0eq)を加えた後、室温で一晩攪拌した。反応液を濃縮し、クロロホルムで抽出、希塩酸、飽和炭酸水素ナトリウム水溶液、食塩水で洗浄し、ろ過することにより、下記式(10)で表わされる化合物を450mg得た。100mLフラスコ中、下記式(10)で表わされる化合物0.25g(1.1mmol)、シクロヘキシルビニルエーテル(東京化成工業(株)製)0.17mL(1.2mmol、0.55eq)をジメチルホルムアミド5mLに溶解させ、ピリジニウムp-トルエンスルホナート27.5mg(110μmol、0.05eq)を加え、終夜で撹拌した。反応液を濃縮し、酢酸エチルで抽出したのち、シリカゲルカラムクマトグラフィー(展開溶媒:ヘキサン/酢酸エチル 10/1~1/1)により精製することにより、下記式(11)で表される塩基発生剤(1)を110mg得た。
上記式(10)で表わされる化合物を製造例1と同様にして得た。100mLフラスコ中、上記式(10)で表わされる化合物0.25g(1.1mmol)を、tert-ブチルビニルエーテル(アルドリッチ(株)製)1gと脱水テトラヒドロフラン4gの混合溶液に溶解させ、ピリジニウムp-トルエンスルホナート(東京化成(株)製)110mg(0.43mmol,0.1eq)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させ、オープンカラムクロマトグラフィー(ヘキサン:酢酸エチル=2:1(体積比))を用いて精製することにより、下記式(12)で表される塩基発生剤(2)を50mg得た。
上記式(10)で表わされる化合物を製造例1と同様にして得た。100mLフラスコ中、上記式(10)で表わされる化合物0.25g(1.1mmol)を、ピリジニウムp-トルエンスルホナート(東京化成(株)製)110mg(0.43mmol,0.1eq) と脱水テトラヒドロフラン4gの混合溶液に溶解させ、3,4-ジヒドロ-2H-ピラン(アルドリッチ(株)製)を1g加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させ、オープンカラムクロマトグラフィー(ヘキサン:酢酸エチル=2:1(体積比))を用いて精製することにより、下記式(13)で表される塩基発生剤(3)を40mg得た。
100mLフラスコ中、炭酸カリウム2.00gをメタノール15mLに加えた。50mLフラスコ中、エトキシカルボニルメチル(トリフェニル)ホスホニウム ブロミド2.67g(6.2mmol)、2-ヒドロキシ-4-メトキシベンズアルデヒド945mg(6.2 mmol)をメタノール10mLに溶解し、よく撹拌した炭酸カリウム溶液にゆっくり滴下した。3時間撹拌した後、TLCにより反応の終了を確認したうえでろ過を行い炭酸カリウムを除き、減圧濃縮した。濃縮後、1Nの水酸化ナトリウム水溶液を50mL加え1時間撹拌した。反応終了後、ろ過によりトリフェニルホスフィンオキシドを除いた後、濃塩酸を滴下し反応液を酸性にした。沈殿物をろ過により集め、少量のクロロホルムにより洗浄することで2-ヒドロキシ-4-メトキシケイ皮酸を1.00g得た。続いて、100mL三口フラスコ中、2-ヒドロキシ-4-メトキシケイ皮酸1.00g(6.0 mmol)を脱水テトラヒドロキシフラン40mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)1.41g(7.2mmol)を加えた。30分後、ピペリジン0.72ml(7.2mmol)を加えた。反応終了後、反応溶液を濃縮し、水に溶解した。クロロホルムで抽出した後、飽和炭酸水素ナトリウム水溶液、1N塩酸、飽和食塩水で洗浄し、少量のクロロホルムで洗浄することで、下記式(14)で表される化合物を1.03g得た。
100mLフラスコ中、下記式(14)で表わされる化合物1.00g(3.6mmol)を、tert-ブチルビニルエーテル(アルドリッチ(株)製)4gと脱水テトラヒドロフラン4gの混合溶液に溶解させ、ピリジニウムp-トルエンスルホナート(東京化成(株)製)91mg(0.36mmol,0.1eq)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させ、オープンカラムクロマトグラフィー(ヘキサン:酢酸エチル=2:1(体積比))を用いて精製することにより、下記式(15)で表される塩基発生剤(4)を60mg得た。
上記式(10)で表わされる化合物を製造例1と同様にして得た。100mLフラスコ中、上記式(10)で表わされる化合物0.25g(1.1mmol)、二炭酸ジ-tert-ブチル(東京化成工業(株)製)0.28g(1.3mmol、1.2eq)、トリエチルアミン(東京化成工業(株)製)0.23ml(1.62mmol、1.5eq)をクロロホルム5mLに溶解させ、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(16)で表される塩基発生剤(5)を160mg得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、下記式(14)で表わされる化合物1.00g(3.6mmol)を、2-ビニルオキシテトラヒドロピラン(東京化成(株)製)4gと脱水テトラヒドロフラン4gの混合溶液に溶解させ、ピリジニウムp-トルエンスルホナート(東京化成(株)製)91mg(0.36mmol,0.1eq)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させ、オープンカラムクロマトグラフィー(ヘキサン:酢酸エチル=2:1(体積比))を用いて精製することにより、下記式(17)で表される塩基発生剤(6)を82mg得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)、二炭酸ジ-tert-ブチル(東京化成工業(株)製)1.00g(4.58mmol、1.2eq)をクロロホルム5mLに溶解させ、触媒量のN,N-ジメチル-4-アミノピリジン(東京化成工業(株)製)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(18)で表される塩基発生剤(7)を1.25g得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)、トリエチルアミン(東京化成工業(株)製)0.8ml(5.74mmol、1.5eq)をクロロホルム10mLに溶解させ、クロロぎ酸ベンジル(東京化成工業(株)製)0.59ml(4.21mmol、1.1eq)を加え、終夜で撹拌した。反応終了後、水を加えクロロホルムで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させ、酢酸エチルにより再結晶することで、下記式(19)で表される塩基発生剤(8)を0.89g得た。
100mLフラスコ中、氷浴下でtrans-o-クマル酸10.0g(60.9mmol)、トリエチルアミン21.2mL(東京化成工業(株)製)(152mmol、2.5eq)をテトラヒドロフラン50mLとジメチルホルムアミド50mLに溶解させ、二炭酸ジ-tert-ブチル(東京化成工業(株)製)12.7g(57.9mmol、0.95eq)を加えた後、触媒量のN,N-ジメチル-4-アミノピリジン(東京化成工業(株)製)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(20)で表される化合物Aを8.5g得た。続いて、100mL三口フラスコ中、化合物A2.5g(9.56mmol)を脱水ジメチルホルムアミド40mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)2.02g(1.1eq)を加えた。30分後、1,6-ヘキサンジアミン(東京化成工業(株)製)540mg(0.9eq)を加えた。反応終了後、反応溶液を濃縮し、水に溶解させ酢酸エチルにより抽出した。抽出液を濃縮しクロロホルム・酢酸エチル混合溶媒により再結晶することで、下記式(21)で表される塩基発生剤(9)を250mg得た。
上記式(20)で表わされる化合物を製造例9と同様にして得た。続いて、100mL三口フラスコ中、化合物A2.5g(9.56mmol)を脱水ジメチルホルムアミド40mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)2.02g(1.1eq)を加えた。30分後、p-キシリレンジアミン(東京化成工業(株)製)2.40g(0.9eq)を加えた。反応終了後、反応溶液を濃縮し、水に溶解させ酢酸エチルにより抽出した。抽出液を濃縮しクロロホルム・酢酸エチル混合溶媒により再結晶することで、下記式(22)で表される塩基発生剤(10)を250mg得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)、tert-ブチルジメチルクロロシラン(東京化成工業(株)製)0.69g(4.58mmol、1.2eq)をジメチルスルホキシド5mLに溶解させ、イミダゾール(東京化成工業(株)製)650mg(9.58mmol、2.5eq)を加え、終夜で撹拌した。反応終了後、5%炭酸水素ナトリウム水溶液を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(23)で表される塩基発生剤(11)を0.89g得た。
上記式(10)で表わされる化合物を製造例1と同様にして得た。100mLフラスコ中、上記式(10)で表わされる化合物0.25g(1.1mmol)、無水酢酸(東京化成工業(株)製)0.12ml(1.3mmol、1.2eq)、トリエチルアミン(東京化成工業(株)製)0.23ml(1.62mmol、1.5eq)をクロロホルム5mLに溶解させ、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(24)で表される塩基発生剤(12)を
0.75g得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)、イソシアン酸ベンジル(東京化成工業(株)製)0.57ml(4.58mmol、1.2eq)をクロロホルム5mLに溶解させ、終夜で撹拌した。反応終了後、水を加えクロロホルムで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(25)で表される塩基発生剤(13)を0.21g得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)、シクロヘキサンメチル イソシアネート(シグマアルドリッチジャパン(株)製)640mg(4.58mmol、1.2eq)をクロロホルム5mLに溶解させ、終夜で撹拌した。反応終了後、水を加えクロロホルムで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、下記式(26)で表される塩基発生剤(14)を0.35g得た。
上記式(14)で表わされる化合物を製造例4と同様にして得た。100mLフラスコ中、上記式(14)で表わされる化合物1.00g(3.82mmol)をクロロホルムに溶解し、ナトリウムメトキシド(東京化成工業(株)製)310mg(5.73mmol、1.5eq)を加え10分間撹拌した。撹拌後、2-ニトロベンジルクロリド(東京化成工業(株)製)0.69g(4.01mmol、1.05eq)を加え、終夜で撹拌した。反応終了後、水を加えクロロホルムで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させたのち、シリカゲルカラムクマトグラフィー(展開溶媒:ヘキサン/酢酸エチル 5/1~1/2)により精製することにより、下記式(27)で表される塩基発生剤(15)を0.42g得た。
500mLナスフラスコ中、セサモール(東京化成工業(株)製)10.0g(72.4mmol)、ヘキサメチレンテトラミン(東京化成工業(株)製)15.2g(109mmol、1.5eq)をトリフルオロ酢酸(関東化学(株)製)100mlに溶解し、95℃で10時間反応を行った。反応終了後、氷浴下で1規定塩酸200mlを添加し15分間撹拌した。撹拌終了後、クロロホルムで抽出し、塩酸・飽和食塩水で洗浄を行うことにより6-ヒドロキシ-3,4-メチレンジオキシベンズアルデヒドを2.38g(14.3mmol)得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、6-ヒドロキシ-3,4-メチレンジオキシベンズアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール100/1~50/1)により精製することにより下記化学式(28)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(28)で表される化合物を用いた以外は、製造例7と同様にして、下記式(29)で表される塩基発生剤(16)を得た。
500mLナスフラスコ中、3,4-ジメトキシフェノール(東京化成工業(株)製)5.0g(32.4mmol)、ヘキサメチレンテトラミン(東京化成工業(株)製)18.2g(130mmol、4.0eq)をトリフルオロ酢酸(関東化学(株)製)100mlに溶解し、100℃で24時間反応を行った。反応終了後、氷浴下で1規定塩酸200mlを添加し15分間撹拌した。撹拌終了後、クロロホルムで抽出し、塩酸・飽和食塩水で洗浄を行うことにより2-ヒドロキシ-4,5-ジメトキシベンズアルデヒドを2.17g(11.0mmol)得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、2-ヒドロキシ-4,5-ジメトキシベンズアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール100/1~50/1)により精製することにより下記化学式(30)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(30)で表される化合物を用いた以外は、製造例7と同様にして、下記式(31)で表される塩基発生剤(17)を得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、1-ヒドロキシ-2-ナフトアルデヒドを用いて、製造例4と同様にして、3-(1-ヒドロキシ-2-ナフタレニル)-アクリル酸の合成、及び3-(1-ヒドロキシ-2-ナフタレニル)-アクリル酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール100/1~50/1)により精製することにより下記化学式(32)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(32)で表される化合物を用いた以外は、製造例7と同様にして、下記式(33)で表される塩基発生剤(18)を得た。
200 mL三口フラスコ中窒素雰囲気下で、2,4-ジヒドロキシベンズアルデヒド(東京化成工業(株)製)3.00g(21.7mmol)、水酸化カリウム1.43g(21.7mmol)を脱水エタノール(関東化学(株)製)30mLに溶解し、そこへp-トルエンスルホン酸-2-メトキシエチル(東京化成工業(株)製)4.13mL(21.7mmol)をゆっくり滴下した。その後反応温度60℃で終夜撹拌した。反応終了後、ろ過を行い、減圧濃縮によりエタノールを除去し、1 N塩酸を加えた。酢酸エチルで抽出した後、1 N塩酸、純水、飽和食塩水で洗浄した。その後、シリカゲルカラムクロマトグラフィー(展開溶媒:へキサン/酢酸エチル 10/1~0/1(体積比))により精製し、-O-(CH2)2-O-CH3基を有する酸誘導体Aを1.01g得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、上記で得られた-O-(CH2)2-O-CH3基を有する酸誘導体Aを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール100/1~50/1)により精製することにより下記化学式(34)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(34)で表される化合物を用いた以外は、製造例7と同様にして、下記式(35)で表される塩基発生剤(19)を得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、5-クロロサリチルアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール100/1~50/1)により精製することにより下記化学式(36)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(36)で表される化合物を用いた以外は、製造例7と同様にして、下記式(37)で表される塩基発生剤(20)を得た。
100mLフラスコ中、(トリフェニルホスホラニリデン)酢酸エチル(東京化成工業(株)製)2.56(7.34mmol)、2’-ヒドロキシアセトフェノン(東京化成工業(株)を2.56g(7.34mmol、1.0eq)をトルエン20mLに溶解し、80℃で3時間撹拌した。薄層クロマトグラフィーにより反応の終了を確認したうえで、飽和塩化アンモニウム水溶液を加え、クロロホルムで抽出した後、水、飽和塩化アンモニウム水溶液にて洗浄した後、無水硫酸マグネシウムを用い乾燥した。濃縮後、シリカゲルカラムクロムトグラフィー(展開溶媒 ヘキサン/酢酸エチル 2/1(体積比))により精製した。
続いて、1Nの水酸化ナトリウム水溶液を15mL加え終夜で撹拌した。反応終了後、沈殿物をろ過により除き、濃塩酸を滴下し反応液を酸性にしたのち、クロロホルムで抽出し濃縮し、桂皮酸誘導体Aを580mg(3.25mmol)得た。
製造例4において、2-ヒドロキシ-4-メトキシケイ皮酸を用いる代わりに、上記で得られた桂皮酸誘導体Aを用いて、製造例4と同様にしてケイ皮酸のアミド化を行い、下記化学式(38)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(38)で表される化合物を用いた以外は、製造例7と同様にして、下記式(39)で表される塩基発生剤(21)を得た。
2,4-ジヒドロキシ-ケイ皮酸(シグマアルドリッチジャパン(株)製)5.0g(27.8mmol)をテトラヒドロフラン100 mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)(東京化成工業(株)製)6.4g(33.3 mmol)を加えた。30分後、ピペリジン(東京化成工業(株)製)3.3ml (33.3 mmol)を加えた。反応終了後、水に溶解し、クロロホルムで抽出した後、飽和炭酸水素ナトリウム水溶液、1N塩酸、飽和食塩水で洗浄した。その後、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール 100/1~10/1(体積比))により精製することにより、下記化学式(40)で表される化合物を3.8g(15.4mmol)得た。
100mLフラスコ中、下記化学式(40)で表される化合物3.00g(12.1mmol)、tert-ブトキシジフェニルクロロシラン(東京化成工業(株)製)3.26ml(14.52mmol、1.2eq)をジメチルスルホキシド5mLに溶解させ、イミダゾール(東京化成工業(株)製)2.46g(36.3mmol、2.5eq)を加え、終夜で撹拌した。反応終了後、5%炭酸水素ナトリウム水溶液を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、(E)-3-(4-(tert-ブトキシジフェニルシリルオキシ)-2-ヒドロキシフェニル)-1-(ピペリジン-1-イル)プロップ-2-エン-1-オンを2.9g(5.63mmol)得た。
100mLフラスコ中、(E)-3-(4-(tert-ブトキシジフェニルシリルオキシ)-2-ヒドロキシフェニル)-1-(ピペリジン-1-イル)プロップ-2-エン-1-オン2.90g(5.63mmol)、二炭酸ジ-tert-ブチル(東京化成工業(株)製)1.48g(6.76mmol、1.2eq)をクロロホルム5mLに溶解させ、触媒量のN,N-ジメチル-4-アミノピリジン(東京化成工業(株)製)を加え、終夜で撹拌した。反応終了後、飽和食塩水を加え酢酸エチルで抽出し、飽和食塩水で洗浄後、硫酸マグネシウムを用い乾燥させることにより、(E)-5-(tert-ブトキシジフェニルシリルオキシ)-2-(3-オキソ-3-(ピペリジン-1-イル)プロップ-1-エニル)フェニルtert-ブチル カーボネートを2.10g(3.4mmol)得た。
100mLフラスコ中、(E)-5-(tert-ブトキシジフェニルシリルオキシ)-2-(3-オキソ-3-(ピペリジン-1-イル)プロップ-1-エニル)フェニルtert-ブチル カーボネート2.00g(3.24mmol)をテトラブチルアンモニウムフルオリド (1mol/Lテトラヒドロフラン溶液)(東京化成工業(株)製)10mlを加え、終夜で撹拌した。反応終了後、水洗した後、シリカゲルカラムクマトグラフィー(展開溶媒:ヘキサン/酢酸エチル 10/1~1/1)により、下記式(41)で表される塩基発生剤(22)を1.03g得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、2-ヒドロキシ-5-ニトロ-m-アニスアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:へキサン/酢酸エチル 10/1~0/1(体積比))により精製することにより下記化学式(42)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(42)で表される化合物を用いた以外は、製造例7と同様にして、下記式(43)で表される塩基発生剤(23)を得た。
500mLナスフラスコ中、4-メルカプトフェノール(アルドリッチ(株)製)10.0g(72.4mmol)、ヘキサメチレンテトラミン(東京化成工業(株)製)16.6g(119mmol、1.5eq)をトリフルオロ酢酸(関東化学(株)製)100mlに溶解し、95℃で10時間反応を行った。反応終了後、氷浴下で1規定塩酸200mlを添加し15分間撹拌した。撹拌終了後、クロロホルムで抽出し、塩酸・飽和食塩水で洗浄を行うことにより2-ヒドロキシ-4-メルカプトベンズアルデヒドを2.05g(13.3mmol)得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、2-ヒドロキシ-4-メルカプトベンズアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:へキサン/酢酸エチル 10/1~0/1(体積比))により精製することにより下記化学式(44)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(44)で表される化合物を用いた以外は、製造例7と同様にして、下記式(45)で表される塩基発生剤(24)を得た。
500mLナスフラスコ中、3-メチル-4-ニトロソフェノール(アルドリッチ(株)製)5.0g(36.5mmol)、ヘキサメチレンテトラミン(東京化成工業(株)製)7.63g(54.7mmol、1.5eq)をトリフルオロ酢酸(関東化学(株)製)100mlに溶解し、95℃で10時間反応を行った。反応終了後、氷浴下で1規定塩酸200mlを添加し15分間撹拌した。撹拌終了後、クロロホルムで抽出し、塩酸・飽和食塩水で洗浄を行うことにより2-ヒドロキシ-4-メチル-5-ニトロソ-ベンズアルデヒドを1.51g(9.13mmol)得た。
製造例4において、2-ヒドロキシ-4-メトキシベンズアルデヒドを用いる代わりに、2-ヒドロキシ-4-メチル-5-ニトロソ-ベンズアルデヒドを用いて、製造例4と同様にして、ケイ皮酸の合成、及びケイ皮酸のアミド化を行い、シリカゲルカラムクマトグラフィー(展開溶媒:へキサン/酢酸エチル 10/1~0/1(体積比))により精製することにより下記化学式(46)で表される化合物を得た。
製造例7において、式(14)で表わされる化合物の代わりに、下記化学式(46)で表される化合物を用いた以外は、製造例7と同様にして、下記式(47)で表される塩基発生剤(25)を得た。
製造例5において、アミド化する際の塩基としてピペリジンの代わりに、ジエチルアミンを用いた以外は、製造例5と同様にして、下記式(48)で表される塩基発生剤(26)を得た。
製造例5において、アミド化する際の塩基としてピペリジンの代わりにから、5-アミノ-1-ペンタノールを用いた以外は、製造例5と同様にして、下記式(49)で表される塩基発生剤(27)を得た。
製造例5において、アミド化する際の塩基としてピペリジンの代わりにから、n-オクチルアミンを用いた以外は、製造例5と同様にして、下記式(50)で表される塩基発生剤(28)を得た。
100mLフラスコ中、炭酸カリウム2.00gをメタノール15mLに加えた。50mLフラスコ中、エトキシカルボニルメチル(トリフェニル)ホスホニウム ブロミド2.19g(5.1mmol)、2,4,5-トリメトキシベンズアルデヒド1.0 g(5.1 mmol)をメタノール10mLに溶解し、よく撹拌した炭酸カリウム溶液にゆっくり滴下した。3時間撹拌した後、薄層クロマトグラフィーにより反応の終了を確認したうえでろ過を行い炭酸カリウムを除き、減圧濃縮した。濃縮後、1Nの水酸化ナトリウム水溶液を50mL加え1時間撹拌した。反応終了後、ろ過によりトリフェニルホスフィンオキシドを除いた後、濃塩酸を滴下し反応液を酸性にした。沈殿物をろ過により集め、少量のクロロホルムにより洗浄することで2,4,5-トリメトキシケイ皮酸を得た。続いて、100mL三口フラスコ中、2,4,5-トリメトキシケイ皮酸500mg(2.8 mmol)を脱水テトラヒドロキシフラン40mLに溶解し、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)0.64g(3.3mmol)を加えた。30分後、シクロヘキシルアミン0.38ml(3.3mmol)を加えた。反応終了後、反応溶液を濃縮し、水に溶解した。ジエチルエーテルで抽出した後、飽和炭酸水素ナトリウム水溶液、1N塩酸、飽和食塩水で洗浄した。その後、シリカゲルカラムクマトグラフィー(展開溶媒:クロロホルム/メタノール 100/1~10/1(体積比))により精製することにより、下記化学式(51)で表される比較塩基発生剤(1)を210mg得た。
上記式(10)で表わされる化合物を製造例1と同様にして製造し、保護基を有しない比較塩基発生剤(2)とした。
合成した塩基発生剤について、以下の測定を行い、評価した。
(1)モル吸光係数
塩基発生剤(1)~(28)をそれぞれアセトニトリルに1×10-4mol/Lの濃度で溶解し、石英セル(光路長10mm)に溶液を満たし、吸光度を測定した。なお、モル吸光係数εは、溶液の吸光度を吸収層の厚さと溶質のモル濃度で割った値である。モル吸光係数の結果を表1に示す。
塩基発生剤(1)~(28)および比較塩基発生剤(1)について1mgの試料をそれぞれ2つずつ用意し、それぞれを石英製NMR管中で重ジメチルスルホキシドに溶解させた。高圧水銀灯を用いて、1本にはi線換算で2J/cm2で光照射を行った。残り1本には光照射を行わなかった。各サンプルの1H NMRを測定し、異性化の割合を求めた。
異性化させたサンプルを10℃/分の昇温温度で加熱したところ、塩基発生剤(1)は、60℃から徐々に脱保護が始まり、100℃以上加熱すると環化し、それに伴い塩基の発生が確認できた。各塩基発生剤の脱保護開始温度と、環化開始温度を表2に示す。なお、保護基がo-ニトロベンジル基の塩基発生剤(15)は、光照射により脱保護と同時に異性化した。脱保護し、異性化したサンプルを加熱したところ、100℃以上加熱すると環化し、それに伴い塩基の発生が確認できた。保護基がo-ニトロベンジル基の塩基発生剤(15)は、加熱のみでは脱保護及び環化は起こらなかった。
また、R5~R8の置換基としては、メトキシ基、水酸基、式(31)で表されるようなジメトキシタイプ、式(28)で表されるような-O-X-O-部位を有するタイプ、式(31)で表されるようなナフタレン環形成タイプ、及び式(34)で表されるような-ORORタイプが、中でも、感度を向上させ、有効であることが確認された。
塩基発生剤(1)を用いて、下記に示す組成の感光性樹脂組成物(1)を調製した。塩基発生剤(1)は無溶媒の状態でエポキシ樹脂に溶解した。
・エポキシ樹脂(jER828 ジャパンエポキシレジン社製):100重量部
・塩基発生剤(1):15重量部
実施例2~28は、実施例1において、塩基発生剤(1)の代わりに、それぞれ塩基発生剤(2)~(28)を用いた以外は、実施例1と同様にして、感光性樹脂組成物(2)~(28)の調製を行った。
感光性樹脂組成物(2)~(28)についても、それぞれ、実施例1と同様にして感光性樹脂組成物の塗膜を2枚ずつ作製した。実施例1と同様に、感光性樹脂組成物(2)~(28)についても、それぞれ、露光後加熱した塗膜については上記混合溶液に溶解せず、エポキシ樹脂が硬化したことが明らかになった。一方、露光をせずに加熱した塗膜については、上記混合溶液に溶解した。
塩基発生剤(9)を含む感光性樹脂組成物(9)を、ガラス上に最終膜厚0.5μmになるようにスピンコートし、160℃のホットプレート上で1分間乾燥させて、感光性樹脂組成物の塗膜を2枚得た。
感光性樹脂組成物の塗膜の1枚については、手動露光機を用いて高圧水銀灯により1J/cm2全面露光を行った。その後、それぞれの塗膜について、100℃で60分間加熱した。加熱した塗膜をイソプロパノールとクロロホルムの混合溶液(イソプロパノール:クロロホルム=4:1(体積比))に室温で10分間浸漬したところ、露光後加熱した塗膜については上記混合溶液に溶解せず、エポキシ樹脂が硬化したことが明らかになった。一方、露光をせずに加熱した塗膜については、上記混合溶液に溶解した。
実施例1~28のように、塗膜形成時の80℃のホットプレート上で15分間乾燥の加熱では、保護基は脱保護しなかったが、実施例29では160℃で1分間加熱することにより、露光前に保護基が脱保護されたため、感度が向上し、1J/cm2という少ない露光量で硬化することが可能になった。
実施例1において、塩基発生剤(1)の代わりに、比較塩基発生剤(2)を用いた以外は実施例1と同様にして、比較感光性樹脂組成物(1)を調製した。実施例の塩基発生剤(1)~(28)は無溶媒の状態でエポキシ樹脂に溶解したが、比較塩基発生剤(2)は無溶媒の状態でエポキシ樹脂に溶解せず懸濁した。
ジ(4-アミノフェニル)エーテル10.0g(50mmol)を300mLの3つ口フラスコに投入し、105.4mLの脱水されたN,N-ジメチルアセトアミド(DMAc)に溶解させ窒素気流下、氷浴で冷却しながら撹拌した。そこへ、少しずつ3,3’,4,4’ -ビフェニルテトラカルボン酸二無水物14.7g(50mmol)を添加し、添加終了後、氷浴中で5時間撹拌し、その溶液を、脱水されたジエチルエーテルによって再沈殿し、その沈殿物を室温で減圧下、17時間乾燥し、重量平均分子量10,000のポリアミド酸(ポリイミド前駆体(1))を白色固体として定量的に得た。
塩基発生剤(4)を用いて、下記に示す組成の感光性樹脂組成物(29)を調製した。
・ポリイミド前駆体(1):85重量部
・塩基発生剤(4):15重量部
・溶剤(NMP(N-メチルピロリドン)):843重量部
イソシアナート樹脂としてヘキサメチレンジイソシアナート(関東化学製)100重量部、水酸基を持つ樹脂としてポリテトラヒドロフラン(アルドリッチ製)150重量部、塩基発生剤(1)10重量部、テトラヒドロフラン500重量部からなる感光性樹脂組成物(30)を調製した。
冷却管をつけた100mlのフラスコにフェニルトリエトキシシラン5g、トリエトキシシラン10g、アンモニア水0.05g、水5ml及びプロピレングリコールモノメチルエーテルアセテート50mlを加えた。半円形型のメカニカルスターラーを用いて溶液を撹拌し、マントルヒーターを用いて70℃で6時間反応させた。次いでエバポレーターを用いて水との縮合反応で生成したエタノールと残留水とを除去した。反応終了後、フラスコを室温になるまで放置し、アルコキシシランの縮合物(アルコキシシラン縮合物(1))を調製した。
上記合成例2で得られたアルコキシシラン縮合物(1) 100重量部と、塩基発生剤(1) 10重量部とを混合した後、溶剤であるテトラヒドロフラン500重量部に溶解させ、感光性樹脂組成物(31)を調製した。
Claims (11)
- 下記化学式(1)で表わされ且つ電磁波の照射と加熱により、塩基を発生することを特徴とする、塩基発生剤。
- 前記式(1)において、R9は、シリル基、シラノール基、ホスフィノ基、ホスフィニル基、ホスホノ基、又は有機基であることを特徴とする、請求項1に記載の塩基発生剤。
- 前記式(1)において、R9は、下記式(2-1)~下記式(2-6)で表わされる有機基よりなる群から選択される1種以上であることを特徴とする、請求項1又は2に記載の塩基発生剤。
- 塩基性物質によって又は塩基性物質の存在下での加熱によって最終生成物への反応が促進される高分子前駆体、及び、前記請求項1乃至3のいずれかに記載の塩基発生剤を含有することを特徴とする、感光性樹脂組成物。
- 前記高分子前駆体が、エポキシ基、イソシアネート基、オキセタン基、又はチイラン基を有する化合物及び高分子、ポリシロキサン前駆体、ポリイミド前駆体、並びにポリベンゾオキサゾール前駆体よりなる群から選択される1種以上を含むことを特徴とする、請求項4に記載の感光性樹脂組成物。
- 前記高分子前駆体が、塩基性溶液に可溶であることを特徴とする、請求項4又は5に記載の感光性樹脂組成物。
- 前記高分子前駆体が、ポリイミド前駆体又はポリベンゾオキサゾール前駆体であることを特徴とする、請求項4乃至6のいずれかに記載の感光性樹脂組成物。
- 塗料、印刷インキ、シール剤、又は接着剤、或いは、表示装置、半導体装置、電子部品、微小電気機械システム、光造形物、光学部材又は建築材料の形成材料として用いられる請求項4乃至7のいずれかに記載の感光性樹脂組成物。
- 前記請求項4乃至8のいずれかに記載の感光性樹脂組成物からなるパターン形成用材料。
- 前記請求項4乃至8のいずれかに記載の感光性樹脂組成物を用いて塗膜又は成形体を形成し、当該塗膜又は成形体を、所定パターン状に電磁波を照射し、照射後又は照射と同時に加熱し、前記照射部位の溶解性を変化させた後、現像することを特徴とするパターン形成方法。
- 前記請求項4乃至8のいずれかに記載の感光性樹脂組成物又はその硬化物により少なくとも一部分が形成されている、印刷物、塗料、シール剤、接着剤、表示装置、半導体装置、電子部品、微小電気機械システム、光造形物、光学部材又は建築材料のいずれかの物品。
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US13/259,586 US8697332B2 (en) | 2009-03-31 | 2010-03-26 | Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method using the photosensitive resin composition and products comprising the same |
KR1020117022825A KR101775737B1 (ko) | 2009-03-31 | 2010-03-26 | 염기 발생제, 감광성 수지 조성물, 감광성 수지 조성물을 포함하는 패턴 형성용 재료, 감광성 수지 조성물을 사용한 패턴 형성 방법 및 물품 |
JP2011507159A JP5516574B2 (ja) | 2009-03-31 | 2010-03-26 | 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品 |
CN201080014608.XA CN102365341B (zh) | 2009-03-31 | 2010-03-26 | 碱产生剂、感光性树脂组合物、含有该感光性树脂组合物的图案形成用材料、使用该感光性树脂组合物的图案形成方法以及物品 |
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CN102365341A (zh) | 2012-02-29 |
KR101775737B1 (ko) | 2017-09-06 |
US20120070781A1 (en) | 2012-03-22 |
TW201041853A (en) | 2010-12-01 |
KR20120003870A (ko) | 2012-01-11 |
CN102365341B (zh) | 2014-12-31 |
US8697332B2 (en) | 2014-04-15 |
JPWO2010113813A1 (ja) | 2012-10-11 |
JP5516574B2 (ja) | 2014-06-11 |
TWI473791B (zh) | 2015-02-21 |
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