WO2003084061A1 - Procede de montage d'un element a onde acoustique de surface, dispositif a onde acoustique de surface et element a onde acoustique de surface sous enveloppe de resine - Google Patents

Procede de montage d'un element a onde acoustique de surface, dispositif a onde acoustique de surface et element a onde acoustique de surface sous enveloppe de resine Download PDF

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Publication number
WO2003084061A1
WO2003084061A1 PCT/JP2002/013421 JP0213421W WO03084061A1 WO 2003084061 A1 WO2003084061 A1 WO 2003084061A1 JP 0213421 W JP0213421 W JP 0213421W WO 03084061 A1 WO03084061 A1 WO 03084061A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin layer
acoustic wave
surface acoustic
substrate
resin
Prior art date
Application number
PCT/JP2002/013421
Other languages
English (en)
Japanese (ja)
Inventor
Naomi Miyaji
Original Assignee
Fujitsu Media Devices Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Media Devices Limited filed Critical Fujitsu Media Devices Limited
Priority to EP02790835A priority Critical patent/EP1492231B1/fr
Priority to KR1020047015013A priority patent/KR100669273B1/ko
Publication of WO2003084061A1 publication Critical patent/WO2003084061A1/fr
Priority to US10/934,414 priority patent/US7239068B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Cette invention concerne un dispositif à onde acoustique de surface à profil mince dans lequel l'élément d'onde acoustique de surface peut être protégé contre la défaillance thermique grâce à un processus de chauffage accéléré. Le dispositif à onde acoustique de surface comprend : un substrat, un élément à onde acoustique de surface avec électrode en peigne formée sur un substrat piézo-électrique, et une puce à bosse montée sur le substrat au travers de bosse de telle sorte que cette électrode est tournée vers le substrat ; une première couche de résine recouvrant l'élément à onde acoustique de surface ; une seconde couche de résine formée sur la première couche de résine, la première et la seconde couches étant faites d'une résine thermodurcissable assurant une transition de durcissement après ramollissement pendant le processus de chauffage, la première couche de résine étant faite d'un matériau qui présente pendant le ramollissement un fluidité supérieure à celle de la seconde couche de résine.
PCT/JP2002/013421 2002-03-29 2002-12-24 Procede de montage d'un element a onde acoustique de surface, dispositif a onde acoustique de surface et element a onde acoustique de surface sous enveloppe de resine WO2003084061A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02790835A EP1492231B1 (fr) 2002-03-29 2002-12-24 Procede de montage d'un element a onde acoustique de surface, dispositif a onde acoustique de surface et element a onde acoustique de surface sous enveloppe de resine
KR1020047015013A KR100669273B1 (ko) 2002-03-29 2002-12-24 탄성 표면파 소자의 실장 방법 및 수지 밀봉된 탄성표면파 소자를 갖는 탄성 표면파 장치
US10/934,414 US7239068B2 (en) 2002-03-29 2004-09-07 Method for mounting surface acoustic wave element and surface acoustic wave device having resin-sealed surface acoustic wave element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002093947A JP4166997B2 (ja) 2002-03-29 2002-03-29 弾性表面波素子の実装方法及び樹脂封止された弾性表面波素子を有する弾性表面波装置
JP2002-93947 2002-03-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/934,414 Continuation US7239068B2 (en) 2002-03-29 2004-09-07 Method for mounting surface acoustic wave element and surface acoustic wave device having resin-sealed surface acoustic wave element

Publications (1)

Publication Number Publication Date
WO2003084061A1 true WO2003084061A1 (fr) 2003-10-09

Family

ID=28671773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/013421 WO2003084061A1 (fr) 2002-03-29 2002-12-24 Procede de montage d'un element a onde acoustique de surface, dispositif a onde acoustique de surface et element a onde acoustique de surface sous enveloppe de resine

Country Status (7)

Country Link
US (1) US7239068B2 (fr)
EP (1) EP1492231B1 (fr)
JP (1) JP4166997B2 (fr)
KR (1) KR100669273B1 (fr)
CN (1) CN100508384C (fr)
TW (1) TWI222143B (fr)
WO (1) WO2003084061A1 (fr)

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JP5591292B2 (ja) * 2012-09-14 2014-09-17 Ｔｄｋ株式会社 圧電素子ユニット
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JP6302692B2 (ja) * 2013-03-28 2018-03-28 日東電工株式会社 中空封止用樹脂シート及び中空パッケージの製造方法
CN103763648B (zh) * 2013-12-27 2017-06-09 圆展科技股份有限公司 耳机装置
JP6266350B2 (ja) * 2014-01-08 2018-01-24 新日本無線株式会社 電子部品およびその製造方法
CN104867839B (zh) * 2014-02-21 2018-06-01 三垦电气株式会社 半导体装置的制造方法和半导体装置
JP6639347B2 (ja) * 2016-07-20 2020-02-05 株式会社日立ハイテクファインシステムズ 二次電池およびその製造方法
US10605785B2 (en) 2017-06-07 2020-03-31 General Electric Company Sensor system and method
US11079359B2 (en) 2017-06-07 2021-08-03 General Electric Company Sensor system and method
CN109257888B (zh) * 2018-08-22 2020-10-27 维沃移动通信有限公司 一种电路板双面封装方法、结构及移动终端
US11244876B2 (en) 2019-10-09 2022-02-08 Microchip Technology Inc. Packaged semiconductor die with micro-cavity
US11855608B2 (en) 2020-04-06 2023-12-26 Rf360 Singapore Pte. Ltd. Systems and methods for packaging an acoustic device in an integrated circuit (IC)
JP2021168458A (ja) * 2020-04-13 2021-10-21 三安ジャパンテクノロジー株式会社 弾性波デバイスパッケージ及びその製造方法
CN114597138A (zh) * 2020-12-03 2022-06-07 群创光电股份有限公司 半导体封装的制造方法
CN114024520B (zh) * 2021-11-03 2023-02-10 北京超材信息科技有限公司 声学装置双层覆膜工艺

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Also Published As

Publication number Publication date
CN100508384C (zh) 2009-07-01
EP1492231A4 (fr) 2007-03-21
US7239068B2 (en) 2007-07-03
JP4166997B2 (ja) 2008-10-15
EP1492231A1 (fr) 2004-12-29
CN1623278A (zh) 2005-06-01
TWI222143B (en) 2004-10-11
US20050029906A1 (en) 2005-02-10
KR100669273B1 (ko) 2007-01-16
EP1492231B1 (fr) 2012-07-11
KR20040091772A (ko) 2004-10-28
TW200304683A (en) 2003-10-01
JP2003298389A (ja) 2003-10-17

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