US20160308173A1 - Hybrid thin-film battery - Google Patents

Hybrid thin-film battery Download PDF

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US20160308173A1
US20160308173A1 US14/968,815 US201514968815A US2016308173A1 US 20160308173 A1 US20160308173 A1 US 20160308173A1 US 201514968815 A US201514968815 A US 201514968815A US 2016308173 A1 US2016308173 A1 US 2016308173A1
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electrochemical device
cathode
anode
electrolyte
encapsulation
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US14/968,815
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Bernd J. Neudecker
Shawn W. Snyder
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Sapurast Research LLC
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Sapurast Research LLC
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Priority claimed from US11/561,277 external-priority patent/US8445130B2/en
Priority claimed from US11/687,032 external-priority patent/US8236443B2/en
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Priority to US14/968,815 priority Critical patent/US20160308173A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01M2/0207
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/04Construction or manufacture in general
    • H01M10/0436Small-sized flat cells or batteries for portable equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/056Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562Solid materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/058Construction or manufacture
    • H01M10/0585Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2/08
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00Primary cells; Manufacture thereof
    • H01M6/40Printed batteries, e.g. thin film batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00Batteries for particular applications
    • H01M2220/30Batteries in portable systems, e.g. mobile phone, laptop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00Electrolytes
    • H01M2300/0017Non-aqueous electrolytes
    • H01M2300/0065Solid electrolytes
    • H01M2300/0068Solid electrolytes inorganic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/50Current conducting connections for cells or batteries
    • H01M50/531Electrode connections inside a battery casing
    • H01M50/534Electrode connections inside a battery casing characterised by the material of the leads or tabs
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49108Electric battery cell making
    • Y10T29/4911Electric battery cell making including sealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49108Electric battery cell making
    • Y10T29/49114Electric battery cell making including adhesively bonding

Definitions

  • the field of this invention relates to electrochemical devices and methods of manufacturing thereof, and more particularly, the composition, method of depositing, and fabrication of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.
  • Thick positive cathodes are good for creating energy-rich thin-film batteries.
  • a thick positive cathode substantially increases the active cathode mass per unit area.
  • producing such cathodes with typical vacuum vapor phase processes has been problematic.
  • FIG. 1 This figure depicts schematically and in cross-sectional view three microscopic columns, grown by a vacuum vapor phase deposition method, of the positive cathode layer of an electrochemical device.
  • the bases of these columns remain anchored to the substrate surface and the cross sectional area of these bases remains virtually fixed as the height of the columns grows.
  • the aspect ratio (height of column/width of column) increases and the cathode film consisting of these columns and thus the entire device becomes mechanically unstable, typically around an aspect ratio of 15.
  • Depositing a thicker cathode in order to increase the energy of an electrochemical device per unit area results in an increased, overall thickness of the device. Because an overall thickness increase of a milli, micro, or nano device is typically undesirable, the device manufacturer has to explore options of how to compensate for or offset such a thickness increase. A generally valid and desirable approach is to minimize the thickness and volume of all of the non-energy providing components inside an electrochemical device.
  • One of the options is to reduce the non-energy providing packaging of an electrochemical device. Both the encapsulation and the substrate are inherent and usually large, fractional parts of the packaging.
  • the reduction of an encapsulation thickness from 100 micrometers, which is a typical thickness for a laminate encapsulation, to a true thin-film encapsulation in the range of 1-10 micrometers would allow the electrochemical device manufacturer, for example, to increase the thickness of the energy bearing cathode by almost 100 micrometers without any discernible overall thickness change of the device.
  • This design approach substantially improves the volumetric quantities of energy, capacity, and power of the electrochemical device. Because these physical performance quantities are required to be delivered in the smallest volume possible for most any milli, micro, or nano electrochemical device, the reduction of the non-energy providing components inside an electrochemical device is critically important for its acceptance in the marketplace.
  • the other option is to fabricate an electrochemical device onto the thinnest possible substrate, if used, traded or sold as a standalone device.
  • This is different from the non-standalone case wherein the device manufacturer may exploit an existing, free surface in an electronic device (chip surface, printed circuit board surface, etc.) and then directly integrate, fabricate or deposit the electrochemical device onto that free surface. This surface then serves as the electrochemical device's substrate as well.
  • One may consider such an electrochemical device being configured with a zero-thickness substrate because no further substrate thickness was introduced by the electrochemical device into the final electronic device.
  • the limits of substrate thinness are reached when it does not provide adequate chemical and physical, mainly mechanical, protection or functionality anymore to support the electrochemical device.
  • vacuum deposited cathode materials require high-temperature processing to fully develop all of their physical properties, which in turn creates film stresses that are translated into the substrate, the mechanical properties of these vacuum vapor deposited cathode materials may challenge any substrate in terms of mechanical deformation.
  • non-vapor phase deposited cathode materials may be fabricated with most or even all of their important physical properties already developed at the time of deposition, so that any high-temperature processing becomes redundant.
  • non-vapor phase deposited cathode materials and other components of an electrochemical device create less stress in the substrate and allow the use of a thinner substrate without the risk of substantially deforming it.
  • an electrochemical device whose cathode can be produced thick and reliably while being fabricated quickly and inexpensively, (ii) whose substrate thickness is as thin as possible while not being deformed by the component layers of the electrochemical device, (iii) whose encapsulation is fabricated as thin as possible while still providing adequate protection against the ambient in which these devices are operated, and/or (iv) whose encapsulation is composed of high-temperature materials that provide the entire electrochemical device with increased thermal resilience.
  • One aspect of the invention is an electrochemical device comprising a positive cathode greater than about 0.5 ⁇ m and less than about 200 ⁇ m thick; a thin electrolyte less than about 10 ⁇ m thick; and an anode less than about 30 ⁇ m thick.
  • the device may also comprise a substrate, current collectors, terminals, a moisture protection layer, and an encapsulation.
  • the cathode may be greater than about 5 ⁇ m and less than about 100 ⁇ m thick.
  • the cathode may also be greater than about 30 ⁇ m and less than about 80 ⁇ m thick.
  • Another aspect of the invention is an electrochemical device comprising a non-vapor phase deposited cathode, an anode, and an electrolyte that is less than 10 ⁇ m thick.
  • the cathode may be greater than about 0.5 ⁇ m and less than about 200 ⁇ m thick, and the anode may be less than about 30 ⁇ m thick.
  • a cathode in accordance with an aspect of an embodiment of the invention may be non-vapor phase deposited.
  • the cathode may be deposited by one of the following methods: slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition or ink-jetting.
  • the cathode may comprise LiCoO 2 , LiMn 2 O 4 , LiMnO 2 , LiNiO 2 , LiFePO 4 , LiVO 2 , and any mixture or chemical derivative thereof.
  • these cathode materials may be doped with elements from the groups 1 through 17 of the periodic table.
  • the electrolyte may comprise lithium phosphorus oxynitride (LiPON).
  • the electrolyte may comprise a thin-film electrolyte.
  • the electrolyte may be deposited by a vacuum vapor phase growth method or non-vapor phase method.
  • the anode may comprise lithium, a lithium alloy or a metal, which can form a solid solution or a chemical compound with lithium, or a so-called lithium-ion compound suitable for use as a negative anode material in lithium based batteries, such as, for example, Li 4 Ti 5 O 12 .
  • an electrochemical device may also be encapsulated with an encapsulation process selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination as described by Snyder et al. in U.S. Pat. No. 6,916,679, the contents of which are hereby incorporated herein by reference in its entirety, metal foil attachment, and metal canning.
  • an encapsulation process selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination as described by Snyder et al. in U.S. Pat. No. 6,916,679, the contents of which are hereby incorporated herein by reference in its entirety, metal foil attachment, and metal canning.
  • the device may further comprise a cathode current collector and an optional anode current collector on top or underneath of the thin electrolyte layer.
  • the electrolyte immediately underneath the optional anode current collector may be protected by a moisture barrier, such as ZrO 2 , if the encapsulation has an opening that allows the optional anode current collector to be in direct contact with ambient atmosphere.
  • non-vapor phase fabrication methods may be used to form a positive cathode, and the cathode combined with cell components of an electrochemical device that are all, or in part fabricated by vacuum vapor phase methods.
  • Exemplary embodiments that utilize such a combination of different methods are viewed as hybrid fabrication methods and resulting devices, for example, a “hybrid thin-film battery.”
  • the non-vapor phase fabrication of the positive cathode does not require a high-temperature fabrication step, which limits the stress development inside the component layer stack of an electrochemical device.
  • This in turn allows use of a thinner substrate.
  • thinner substrates may be prone to undesirable deformation under a given magnitude of stress, tradeoffs from using a thin substrate include a thinner electrochemical device for a given energy, capacity, and power performance.
  • the use of a thinner substrate allows for increases in the volumetric quantities of energy, capacity, and power of an electrochemical device.
  • the cathode may be vacuum vapor phase grown, or fabricated by a non-vapor phase method, and then may be mechanically embossed or otherwise formed into structures that increase its surface area within the same previously coated footprint, but with resulting increased maximum thickness and decreased minimum thickness.
  • This structure or architecture minimizes the average distance of any volume element inside the cathode relative to the neighboring solid state thin-film electrolyte layer, which, unlike in electrochemical devices with gel or liquid type electrolytes, typically does not intimately penetrate the cathode bulk. Therefore, minimizing the average distance of any volume element inside the cathode relative to the solid state thin-film electrolyte reduces the ionic diffusion lengths during operation of the electrochemical device, which in turn improves its power capability.
  • a further aspect of an embodiment of the invention involves mixing electronic conducting material such as carbon into an embossed or other surface-increased cathode structure to minimize electronic diffusion lengths inside the cathode bulk to improve the power capability of an electrochemical device.
  • an electrochemical device in another aspect of an embodiment of the invention, includes a thin-film encapsulation comprising or consisting of inorganic material that exhibits fairly good high-temperature characteristics.
  • a thin-film encapsulation is used to minimize the thickness contribution of the encapsulation to the overall thickness of the electrochemical device.
  • a thin encapsulation such as a thin-film encapsulation
  • a thin-film encapsulation can overcompensate or at least compensate in full, or in part for any thickness increase of the cathode relative to the overall thickness of the electrochemical device.
  • the use of a thinner encapsulation directly increases the volumetric quantities of energy, capacity, and power of a given electrochemical device.
  • a thin-film encapsulation consists of multiple inorganic layers that all exhibit intrinsic, high-temperature stability, a characteristic that raises to some extent the temperature stability and resilience of the entire electrochemical device.
  • FIG. 1 schematically shows a cathode with columns grown according to methods used in the prior art.
  • FIG. 2 illustrates a hybrid thin-film electrochemical device according to an exemplary embodiment of the present invention.
  • FIG. 3 shows a cross-sectional view of a scanning electron micrograph of a composite LiCoO 2 cathode deposited by slurry coating and then coated with a LiPON thin-film electrolyte according to an exemplary embodiment of the invention.
  • FIG. 4 illustrates the electrochemical cycle behavior of an electrochemical device using the composite LiCoO 2 cathode and the LiPON thin-film from FIG. 3 according to an exemplary embodiment of the invention.
  • FIG. 5 depicts a scanning electron micrograph of a 9 ⁇ m thick, fully crystalline LiCoO 2 positive cathode film fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 6 shows the current-discharge voltage performance of a thin-film electrochemical device whose LiCoO 2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 7 shows the reversible discharge capacity as a function of cycle number of a thin-film electrochemical device whose LiCoO 2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 8 shows a scanning electron micrograph of an about 15 ⁇ m thick, fully crystalline LiCoO 2 positive cathode film deposited by ink-jetting according to an exemplary embodiment of the invention.
  • FIG. 9 shows a hybrid thin-film electrochemical device without a substrate according to an exemplary embodiment of the present invention.
  • FIG. 10 shows a multi-layer thin-film used to encapsulate an electrochemical device according to an exemplary embodiment of the present invention.
  • FIG. 11 shows the electrochemical device shown in FIG. 2 , including a modulating LiPON layer and a multi-layer thin-film encapsulation layer according to an exemplary embodiment of the present invention.
  • FIG. 12 shows an inverted thin-film battery configuration according to an exemplary embodiment of the present invention.
  • FIG. 13 shows an exemplary embodiment of an inverted thin-film battery.
  • FIG. 14 shows an exemplary embodiment of an embossed cathode layer.
  • FIG. 1 illustrates a schematic cross-sectional view of a typical cathode layer 120 fabricated onto a metal current collector 101 over a substrate 100 .
  • the cathode may grow, for example, in columns 120 with inter-columnar void space 111 .
  • FIG. 1 Also shown in FIG. 1 is a next layer in the fabrication process sequence of the thin-film electrochemical device, the electrolyte 110 with a typical bridging structure over the inter-columnar void space 111 .
  • FIG. 2 shows a hybrid thin-film electrochemical device with a cathode 210 deposited without using a vacuum vapor phase process according to an exemplary embodiment of the present invention.
  • a cathode 210 is directly deposited onto a substrate 200 .
  • the substrate 200 in this embodiment may also serve as the cathode current collector.
  • a metallically conducting current collector (not shown) may be interposed between the substrate 200 and the cathode 210 .
  • the cathode 210 may comprise LiCoO 2 , LiMn 2 O 4 , LiMnO 2 , LiNiO 2 , LiFePO 4 , LiVO 2 , or any mixture or chemical derivative thereof.
  • the cathode 210 may be between about 0.5 ⁇ m and about 200 ⁇ m thick. In a preferred embodiment, the cathode 210 , for example, may be between about 5 and about 100 ⁇ m thick. In a most preferred embodiment, for example, the cathode 210 may be between about 30 to about 80 ⁇ m thick.
  • an electrolyte layer 220 may be deposited on the top surface of the cathode layer 210 .
  • the electrolyte layer may, for example, comprise lithium phosphorus oxynitride (LiPON) or other solid state thin-film electrolytes such as LiAlF 4 , as discussed in U.S. Pat. No. 4,367,267, or Li 3 PO 4 doped Li 4 SiS 4 , as discussed by Yamamura et al. in U.S. Pat. No. 5,217,826. Both of these patents are incorporated herein in their entirety by reference.
  • This electrolyte layer 220 may, for example, be less then about 10 ⁇ m thick.
  • the cathode 210 is thick when compared to the relative sizes of the electrolyte 220 , substrate 200 , and an anode 230 formed over the electrolyte 220 .
  • the relative size of the cathode 210 is also thick in comparison to the anode current collector 240 , as well as a thin-film encapsulation 250 .
  • the electrolyte 220 may be deposited on the cathode 210 using a variety of methods. These methods may include, for example, vacuum vapor phase growth methods or non-vapor phase methods.
  • Vacuum vapor phase methods may include, for example, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, plasma enhanced chemical vapor deposition or the like.
  • Non-vapor phase methods may include, for example, spin coating, ink-jetting, thermal spray deposition or dip coating. Spin coating is discussed, for example, by Stetter et al.
  • the thin negative anode layer 230 may comprise, for example, lithium, lithium alloys, metals that can form solid solutions or chemical compounds with lithium, or a so-called lithium-ion compound that may be used as a negative anode material in lithium based batteries, such as, for example, Li 4 Ti 5 O 12 .
  • the thin anode layer 230 may be less than about 30 ⁇ m thick.
  • the thin anode may make contact with the anode current collector 240 , which can be accessed electrically through an opening 260 in the encapsulation 250 . In one embodiment the anode current collector is less than about 2 ⁇ m thick.
  • the thin-film encapsulation 250 may be electrically conducting in certain areas and thus may, in some embodiments, serve as an anode current collector. In such embodiments, a separately deposited anode current collector 240 would not be necessary.
  • the thin-film encapsulation 250 may, for example, be less than about 250 ⁇ m thick.
  • the cathode 210 in FIG. 2 may be deposited on the substrate 200 using a variety of deposition methods.
  • the cathode material 210 is deposited using a non-vapor phase deposition method.
  • Non-vapor phase deposition methods are not performed in a vacuum environment.
  • a number of non-vapor phase deposition methods are known in the art. A few exemplary methods include, slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition, sol-gel deposition, spray coating, dip coating, and ink-jetting, to name a few. Any other non-vapor phase deposition methods or methods that do not require deposition in a vacuum may be used without deviating from the spirit, scope or embodiments of the present invention.
  • non-vapor phase, non-vacuum deposition methods may produce a single phase cathode or a composite cathode.
  • the composite cathode may be deposited either on a nanoscopic, microscopic, or milliscopic scale and may consist of organic and/or inorganic matter which, in addition, may be polymerized, such as poly(vinyl pyrrolidone), sulfur nitride (SN) x , nano-tubed carbon or acetylene black.
  • All of the depositions mentioned herein may, for example, be followed by a drying step with temperatures below about 150° C., and/or a low-temperature drying and adhesion improving step with temperatures between about 150° C. to about 400° C., and/or a high temperature anneal step ranging from about 400° C. to about 1000° C. These steps may help, for example, in drying, improving adhesion, formation of the correct film phase, and/or crystallization.
  • the cathode deposition material may be used either in pure form or mixed with binder material, with or without carbon-type, metal-type or alloy-type electrical conduction enhancers. When the cathode material comprises a mixed form rather than a pure form, such cathode materials may be composite cathode materials.
  • Slurry coating has been used in battery fabrication as shown, for example, by Hikaru et al. in U.S. Pat. No. 6,114,062, or by Kinsman in U.S. Pat. No. 4,125,686, which are incorporated herein in the entirety by reference.
  • Slurry coating may lead to the deposition of a composite electrode consisting of the electrochemical active material, which is in the form of finely dispersed powder particles that are bonded together using a polymeric binder and some form of electrical conduction enhancer, such as carbon black or the like.
  • the slurry contains solvents which need to be evaporated and/or pyrolyzed after film deposition.
  • a composite cathode may be deposited from slurry including or consisting of fully crystalline LiCoO 2 powder, a polyimide binder, and a graphite electrical conduction enhancer. This slurry may then be coated onto an Al foil substrate and dried at temperatures below about 150° C. in ambient air for less than about 2 days. Subsequently, in this embodiment, the cathode may be coated, for example, with an about 2 ⁇ m LiPON thin-film electrolyte, an about 3 ⁇ m thick Li negative anode, and an about 0.3 ⁇ m thick Cu anode current collector. Finally, an about 100 ⁇ m thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • the dried slurry coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to about 1000° C., as described above, to finalize the structure of the cathode or composite cathode.
  • This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method.
  • the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • the cathode 210 in FIG. 2 may be modified as shown, for example, in FIG. 14 through mechanical displacement or removal means including embossing, stamping, abrading, scraping, forming and the like.
  • This layer modification may be performed on either the wet or completely dried cathode.
  • This cathode surface modification improves the ion transfer efficiency between the cathode bulk and the thin-film electrolyte, for example, consisting of a LiPON layer (not shown), and thus improves the power performance of the electrochemical device.
  • cathode 210 comprises a composite material including or consisting of at least the electrochemically active cathode material, for example LiCoO 2 , and a carbonaceous electronic conduction enhancer, which serves to minimize the electronic diffusion lengths inside the composite cathode bulk.
  • the electrochemically active cathode material for example LiCoO 2
  • a carbonaceous electronic conduction enhancer which serves to minimize the electronic diffusion lengths inside the composite cathode bulk.
  • FIG. 3 shows a cross-sectional view of a scanning electron micrograph showing an exemplary LiPON coated composite cathode.
  • the dimension calibration bar at the very left side in the left picture is about 9 ⁇ m long; and the one in the insert picture on the right side represents a length of about 3 ⁇ m.
  • FIG. 4 An electrochemical cycling performance of an electrochemical device according to an exemplary embodiment of the present invention is shown in FIG. 4 .
  • a composite cathode may be deposited by Meyer rod coating of a viscous suspension or solution containing, for example, LiCoO 2 powder, as described by Principe et al. in U.S. Pat. No. 6,079,352, which is incorporated herein by reference in its entirety.
  • a polymeric binder such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed.
  • This coating on a substrate, such as an Al foil substrate may then be dried at temperatures below, for example, about 150° C. in air for less than about 2 days.
  • the cathode may be coated, for example, with an about 2 ⁇ m LiPON thin-film electrolyte, an about 3 ⁇ m thick Li negative anode, and an about 0.3 ⁇ m thick Cu anode current collector.
  • an about 100 ⁇ m thick heat and pressure sensitive metal-polymer laminate which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • a dried Meyer rod coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode.
  • This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method.
  • the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • a composite cathode may be deposited by direct and/or reverse roll coating of a viscous suspension or solution, containing, for example, LiCoO 2 powder as described by Davis et al. in U.S. Pat. No. 3,535,295, which is incorporated herein by reference in its entirety.
  • a polymeric binder such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed.
  • This coating onto a substrate, such as an Al foil substrate may then be dried at temperatures below about 150° C. in ambient air for less than about 2 days.
  • the cathode may be coated, for example, with an about 2 ⁇ m LiPON thin-film electrolyte, an about 3 ⁇ m thick Li negative anode, and an about 0.3 ⁇ m thick Cu anode current collector.
  • an about 100 ⁇ m thick heat and pressure sensitive metal-polymer laminate which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • a dried direct or reverse roll coated deposit may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode.
  • This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method.
  • the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • a thick cathode may be deposited on a substrate via a doctor blade technique as disclosed by Brown in GB Patent No. 947518, which is incorporated herein in its entirety by reference.
  • This deposition method is analogous to spreading butter.
  • a fine blade slices into some cathode material paste consisting of the electrochemically active material, in precursor or final form, mixed with solvents, binders, and potentially electrical conduction enhancer materials, and then spreads the cathode material paste under a certain thickness directly onto a substrate.
  • cathode material paste may be used to form the final cathode or composite cathode.
  • additional drying, adhesion, formation and/or crystallization steps at temperatures of up to about 1000° C. may be used to form the final cathode or composite cathode.
  • This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method.
  • the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • a cathode powder is suspended or dispersed in a solvent of a low boiling point (high volatility), such as, for example, water, low-molecular mass alcohols, low-molecular mass ethers, low-molecular mass ketones, low-molecular mass esters, low-molecular mass hydrocarbons, etc.
  • a solvent of a low boiling point such as, for example, water, low-molecular mass alcohols, low-molecular mass ethers, low-molecular mass ketones, low-molecular mass esters, low-molecular mass hydrocarbons, etc.
  • This suspension may then be dropped onto a fast spinning substrate (typically about 1000-3000 rpm) and is thus spread out quickly into a thin-film over the substrate due to the high centrifugal forces exerted on the droplets. Because of the extremely low mass or volume per unit area, thin-films of a volatile solvent evaporate quickly leaving the solute or suspended or dispersed material precipitated on the substrate.
  • the spin coating process may be repeated multiple times so as to increase the thickness of a given film.
  • the spinning substrate may be heated.
  • the spin coating suspension may additionally contain binder material or binder precursor material as well as electrical conduction enhancer material.
  • a non-vapor phase LiCoO 2 cathode film may be developed using electrophoretic deposition as discussed by Kanamura et al. in 3 Electrochem. Solid State Letters 259-62 (2000) or by Lusk in GB Patent No. 1298746, both of which are incorporated herein by reference in their entirety.
  • micron size, fully crystallized LiCoO 2 particles may be suspended in a solution of acetone, isopropanol, and/or iodine and may enable the electrophoretic deposition of, for example, an about 9 ⁇ m thick, fully crystalline LiCoO 2 cathode film onto stainless steel substrate without any columnar structure. This process may be performed, for example, at less than about 120VDC within about 30 minutes at room temperature.
  • FIG. 5 depicts a scanning electron micrograph of an exemplary positive cathode film in cross-sectional view deposited with electrophoretic deposition.
  • the potential iodine impurity concentration of the film shown in the figure is below the detection limits ( ⁇ 1 wt %) of the energy dispersive x-ray spectroscopic method employed.
  • Electrochemical cells may also be fabricated with thinner LiCoO 2 composite cathodes by electrophoretic deposition, for example, in a solution consisting of about 200 ml acetone, about 23 mg I 2 , about 38 mg carbon black, and about 53 mg poly(tetrafluoroethylene) (PTFE) into which about 1 g of fully crystalline LiCoO 2 particle powder was suspended.
  • PTFE poly(tetrafluoroethylene)
  • the driving voltage of 50VDC for this electrophoretic deposition may be applied, for example, for about 30 seconds.
  • the so-deposited LiCoO 2 composite film may be annealed at approximately about 377° C. in air for about 4 hours to improve adhesion to the conductive substrate.
  • the fabrication of the electrochemical device may be completed by depositing an about 2 ⁇ m thick LiPON electrolyte using RF magnetron sputter over the LiCoO 2 composite cathode, then fabricating approximately about 0.3 ⁇ m thick Cu anode current collector film by electron beam evaporation, which may then be followed by a thermal (resistive) vacuum deposition of an about 3 ⁇ m thick metallic Li anode.
  • FIG. 6 The current-discharge voltage performance of such an electrochemical device is presented in FIG. 6 , while its electrochemical cycle stability is shown in FIG. 7 .
  • an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • a thick cathode may be deposited using a sol-gel method.
  • an oxidic cathode film material to be deposited is provided in a precursor state, such as aqueous or alcoholic sols or gels of lithium and cobalt ions that are electrically balanced by anionic counter ions or chelates.
  • anionic counter ions or chelates may comprise, for example, nitrate, glycolate, hydroxide, citrate, carboxylates, oxalate, alcoholate, or acetylacetonate.
  • Such formulations may be dip coated or sprayed onto the substrate and then dried at elevated temperatures for extended periods of time, for example, less than 2 days.
  • the so-fabricated films may be subjected to a high-temperature pyrolysis process so as to convert the anionic counter ions or chelates quantitatively into pure oxides.
  • This method is discussed in the Ph.D Thesis of Bernd J. Neudecker, Stuttgart, Germany (1994); by Plichta et al., in 139 J. Electrochem. Soc. 1509-13 (1992); and by Nazri, U.S. Pat. No. 5,604,057.
  • the sol-gel may additionally contain binder material or binder precursor material, as well as electrical conduction enhancer material. All of these additives do not, and are also not intended to evaporate during the drying process, either done at ambient conditions or at elevated temperatures, as described above, and/or vacuum.
  • an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • the thick cathode may be deposited using an ink-jet method.
  • Ink-jetting of oxide film electrodes is discussed by Watanabe Kyoichi et al. in JP 2005011656, Speakman in U.S. Pat. No. 6,713,389 and Hopkins et al. in U.S. Pat. No. 6,780,208, which are incorporated herein in their entirety by reference.
  • fully crystallized LiCoO 2 powder may be milled to about 0.55 ⁇ m in average particle size, and then dispersed in an aqueous solution of about 0.05 vol % iso-octanol, about 5 vol % isopropanol, about 10 vol % ethylene glycol monobutyl ether, and about 10 vol % ethylene glycol. This solution may then be sonicated for about 1 hour to form a suitable ink-jet solution.
  • the LiCoO 2 films may then be deposited through a print head and wetted ceramic, for example, about 250 ⁇ m thick Al 2 O 3 plates, and a stainless steel substrates well, for example, an about 50 ⁇ m foil.
  • the as-deposited LiCoO 2 films may be dried in air at about 200° C. for about 2 hours in order to drive off excess solvent and improve the adhesion of the LiCoO 2 film to its substrate.
  • a dried LiCoO 2 film thickness of about 15 ⁇ m may be achieved based on ten print head passes over the same substrate region.
  • a cross-sectional scanning electron micrograph view of such a LiCoO 2 film is shown in FIG. 8 .
  • the ink-jet solution or suspension may contain binder material, binder precursor material, and/or electrical conduction enhancer material. If used, each of these materials do not, and are also not intended to evaporate during the drying process, whether at ambient conditions or at elevated temperatures, as described above, and/or in a vacuum.
  • an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • a cathode fabricated by a non-vapor phase deposition may be coated, in its finished or unfinished state, for example, with an inert, metallically conducting layer, such as gold.
  • an inert, metallically conducting layer such as gold.
  • a finished or unfinished cathode and an inert, metallically conducting coating may be, for example, heated together for further drying, adhesion, formation, and/or crystallization during which processes the inert, metallically conducting coating may be substantially absorbed into the pores, voids, and crevices of the cathode, thus improving the electrical conduction of the cathode.
  • the anode in the exemplary embodiments described above may be deposited using a variety of methods.
  • the anode material may be deposited using a vacuum vapor phase growth method, or a non-vapor phase growth method, such as ink-jetting or dip coating.
  • An exemplary embodiment of the present invention includes depositing a negative anode material via a vacuum vapor phase growth method.
  • Typical vapor phase growth methods for negative anodes include, but are not limited to, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, or plasma enhanced chemical vapor deposition.
  • the negative anode may either be, for example, metallic lithium, a lithium alloy, or a metal that can form a solid solution or a chemical compounds with lithium.
  • Non-vapor phase growth methods for depositing a negative anode.
  • non-vapor phase growth methods such as ink-jetting of metallic lithium powder mixtures may be used to deposit a negative anode.
  • ink-jetting of metallic lithium powder mixtures may be used to deposit a negative anode.
  • ink-jetting of metallic lithium powder mixtures may be used to deposit a negative anode.
  • Such methods are described by Nelson et al. in U.S. Patent Publication No. 2005/0239917.
  • a lithium-ion anode such as metallic tin
  • a sample may be deposited into molten tin under air atmosphere or transfer the molten or hot tin on a flattened face of a, for example, rod and then stamp the tin onto the sample.
  • a dip coating technique via sol-gel route may similarly work for depositing negative anode materials as described, for example, by Patrusheva et al. in RU Patent No. 2241281C2, which is incorporated herein by reference in its entirety.
  • SnO 2 based Li-ion anodes using suitable anionic formulations of alkoxides may be used, as described by Toki Motoyuki in U.S. Pat. No. 6,235,260, which is also incorporated herein by reference in it entirety.
  • FIG. 9 shows an exemplary hybrid thin-film electrochemical device fabricated without a substrate according to an embodiment of the present invention.
  • This device is similar to that shown in FIG. 2 , but does not have a substrate. Instead, the device is spatially terminated by a thin metal layer 300 that may be used, for example, as a current collector and electrical terminal.
  • the device in FIG. 9 comprises at least a cathode 310 , an electrolyte 320 , and an anode 330 .
  • the embodiments described above may be encapsulated using an encapsulation 350 selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination of protective polymer composites as described by Snyder et al. in U.S. Pat. No. 6,916,679, pressure-heat lamination of metal foils coated with pressure-heat sensitive adhesive surfaces, and metal canning.
  • an encapsulation 350 selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination of protective polymer composites as described by Snyder et al. in U.S. Pat. No. 6,916,679, pressure-heat lamination of metal foils coated with pressure-heat sensitive adhesive surfaces, and metal canning.
  • An anode current collector 340 such as Zr may be interposed between the electrolyte 320 , the anode 330 , and the encapsulation 350 . Furthermore, a moisture barrier may be applied between the anode current collector 340 and the underlying moisture sensitive electrolyte 320 to protect latter from the environment.
  • a material having moisture blocking properties may be selected: a) from the group of metals, semi-metals, alloys, borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides; b) from the group of any multinary compounds composed of borides, carbides, suicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, and iodides; or c) from the group of high-temperature stable organic polymers and high-temperature stable silicones.
  • This moisture barrier may comprise ZrO 2 or ZrN and may be part of the anode current collector 340 that may be gradiented in terms of its oxide or nitride content thus reaching a stoichiometry of ZrO 2 or ZrN near the interface to the electrolyte.
  • FIG. 10 shows an embodiment of an electrochemical device with a multilayer thin-film encapsulation material.
  • the multilayer thin-film encapsulation 400 may be comprised, for example, of multiple strong metallic getter layers 410 with alternating amorphous or glassy oxide or nitride layers 420 thereof.
  • the strong metallic getter layers 410 are used to protect the device from moisture and oxygen based on their superior gettering ability for H 2 O and O2.
  • the strong metallic getter layers may, for example, be comprised of Zr, Y, Ti, Cr, Al, or any alloy thereof.
  • the glassy or amorphous layers 420 may be the oxides or nitrides of the metal or metals used in the getter layers, such as, for example, ZrO 2 , ZrN, Y 2 O 3 , YN, TiO 2 , TiN, Cr 2 O 3 , CrN, Al 2 O 3 , AIN, or any multi-element compound thereof.
  • the mechanically dense glassy or amorphous layers being substantially free of grain boundaries may, for example, effectively block any moisture or oxygen diffusion through said oxides or nitrides. As a result, the multilayer thin-film encapsulation may effectively protect the underlying, air sensitive metallic anode.
  • the multilayer thin-film encapsulation consists of inorganic high-temperature stable or resilient materials. Using such an encapsulation increases the high temperature stability of the electrochemical device as compared with an electrochemical device that employs polymeric components in its encapsulation, such as is the case in the above-mentioned pressure-heat laminated encapsulation described by Snyder et al. in U.S. Pat. No. 6,916,679.
  • inorganic high-temperature stable or resilient materials may include a multilayer thin-film encapsulation having vacuum vapor phase deposited alternating layers.
  • a thin-film encapsulation may comprise or consist of 30 alternating 1000 ⁇ thick layers of the sequence ZrO 2 /Zr/ZrO 2 /Zr/ . . . or ZrN/Zr/ZrN/Zr/ . . . , although it is to be understood that different sized thickness, periods and materials may be used.
  • These alternating layers may be deposited at less than about 100° C. substrate temperature in one vacuum chamber pump-down from ambient pressures, for example.
  • Such an exemplary 30 multilayer thin-film encapsulation may, for example, be only about 3 ⁇ m thick and high-temperature stable to far above about 300° C.
  • the mere thinness of such a thin-film encapsulation directly increases the energy, capacity, and power of a given electrochemical device per unit volume (volumetric energy, volumetric capacity, and volumetric power) compared with an electrochemical device that uses a pressure-heat laminated encapsulation, which is typically thicker by at least one order of magnitude than the presented thin-film encapsulation of about 3 ⁇ m.
  • the volumetric quantities of energy, capacity, and power can increase three-fold when for a given electrochemical device of, for example, 150 ⁇ m in total packaged thickness, which may comprise an actual electrochemical cell of, for example, 10 ⁇ m in thickness, a, for example, 35 ⁇ m thick substrate, and a, for example, 100 ⁇ m thick pressure-heat laminate, the encapsulation is replaced by a thin-film encapsulation of, for example, 3 ⁇ m in thickness, which results in an overall thickness of the electrochemical device of 48 ⁇ m.
  • FIG. 11 shows an electrochemical device according to an exemplary embodiment of the present invention.
  • this embodiment includes an encapsulation layer 570 .
  • This encapsulation may be, for example, a multilayer encapsulation as described above and as shown in FIG. 10 .
  • a second LiPON layer 560 may be interposed between the encapsulation layer 570 and the anode 530 .
  • the encapsulation layer 570 may be fabricated onto the anode 530 , which may comprise metallic lithium.
  • the softness of the anode 530 material may cause the encapsulation layer 570 to crack due to the mechanically weak fundament provided by the soft anode 530 and/or the stress imbalance at the interface of the anode 530 encapsulation 570 . Once cracked, the encapsulation 570 may cause exposure of the sensitive anode 530 to the ambient, which may destroy the anode.
  • a glassy LiPON (or derivative) modulator layer 560 may mechanically stabilize the soft anode surface while chemically encapsulating it.
  • the cathode 510 may be thick when compared to the relative sizes of the electrolyte 520 , substrate 500 (and cathode current collector in some embodiments), anode 530 , anode current collector 540 , electrical insulation layer 550 , modulating LiPON layer 560 , and thin-film encapsulation 570 .
  • a metallic anode 530 such as, for example, metallic Lithium, may be melted when heated above its melting point at about 181° C. Due to its spatial confinement, chemical protection, and inertness towards LiPON well above the melting point of lithium, the metallic lithium anode 530 remains fixed at location and intact as a negative anode material inside of the described electrochemical device.
  • This engineering design also enables the described electrochemical device being used in solder reflow processing or flip chip processing.
  • the anode for example, copper lithium alloy or solid solutions, such as, Li x Cu, Li x Zr, Li x V, Li x W, Li x Be, Li x BeyCu, etc.
  • These alloys or solid solutions of lithium may offer stronger mechanical properties compared with soft metallic lithium, and thus may allow the direct deposition of the multilayer thin-film encapsulation 570 without the use of the above-described LiPON modulator layer 560 interposed between the soft negative metallic anode 530 and the multilayer thin-film encapsulation 570 . In such case, the LiPON modulator layer 560 may be redundant.
  • an electrochemical device may be fabricated, for example, onto a 25.4 mm ⁇ 25.4 mm large aluminum substrate of 25 ⁇ m in thickness ( 500 ), coated with a 80 ⁇ m ⁇ 3.3 cm 2 large LiCoO 2 composite positive cathode consisting of 62 volume % of LiCoO 2 powder and the volume balance of polymeric binder and electronically conducting carbon black powder ( 510 ), a 1.5 ⁇ m thin film of solid state LiPON electrolyte ( 520 ), a 10 ⁇ m thick negative, metallic lithium anode ( 530 ), a 0.5 ⁇ m thick nickel anode current collector ( 540 ), a 0.5 ⁇ m thick ZrO 2 electrical insulation layer ( 550 ), a 0.5 ⁇ m thick LiPON modulator layer ( 560 ), and a 3 ⁇ m thick multilayer thin-film encapsulation layer consisting of fifteen 1000 ⁇ thick Zr/1000 ⁇ thick ZrO 2 bi-stacks ( 570 ), and a 3 ⁇ m thick multilayer thin
  • the electrochemical device is 120 ⁇ m thick at its thickest cross-section and provides 10 mAh of continuous capacity within the voltage range of 4.2-3.0V with an average voltage of 4.0V, which results in a volumetric energy of 520 Wh/liter for the fully packaged electrochemical device.
  • the volumetric energy of this device increases from 520 Wh/liter to 590 Wh/liter.
  • a barrier layer may be included.
  • This barrier layer may be deposited onto a substrate, such as, for example, a metal foil substrate, wherein the barrier layer chemically separates the battery part (i.e., electrochemically active cell) from the substrate part of an electrochemical apparatus.
  • the barrier may prevent diffusion of any contaminants entering the battery from the substrate as well as, for example, block ions from escaping the battery and diffusing into the substrate during both battery fabrication and during battery operating and storage conditions.
  • Certain potentially suitable materials for a barrier layer may include poor ion conducting materials, for example, such as borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides, and any multinary compounds thereof.
  • electrically insulating materials may further prevent possible reactions between the substrate and the battery layers from occurring. For example, if a possible chemical reaction includes the diffusion of ions and electrons, an insulating barrier would provide a way to block the electrons, and thus prevent any such chemical reaction.
  • a barrier layer may comprise electrically conducting materials as well, as long as they do not conduct any of the ions of the substrate or battery layer materials.
  • ZrN is an effective conducting layer that will prevent ion conduction.
  • metals, alloys, and/or semi-metals may serve as a sufficient barrier layer depending on the anneal temperatures applied during the battery fabrication process and substrate material used.
  • the diffusion barrier layer may, for example, be single or multi-phase, crystalline, glassy, amorphous or any mixture thereof, although glassy and amorphous structures are preferred in some applications due to their lack of grain boundaries that would otherwise serve as locations for increased, but unwanted, ion and electron conduction.
  • a thin-film encapsulation layer such as the one shown in FIGS. 10 and 11 , may, for example, tent over the device. Therefore, a flexible encapsulation may, for example, be used to allow the device to expand and contract.
  • the above-described glass-metal multilayer encapsulation possesses appropriate flexible properties, which can be tailored, for example, by changing the sputter deposition parameters, which then changes the densities of the glass and/or metal.
  • Another approach to tuning the mechanical properties of the constituents of the thin-film encapsulation, and thus also the thin-film encapsulation itself may include changing the stoichiometry of one or more constituents of the thin-film encapsulant.
  • ZrN can be changed to Zr 2 N, which is equivalent to depriving the particular composition of this layer of nitride.
  • metals in the stack For example, instead of a Zr, ZrN, Zr, ZrN stack, one could fabricate a multilayer thin-film encapsulation consisting of Zr, AlN, Cr, TiN.
  • the thick cathode may also be configured with a thin electrolyte, a thin anode, and a thin encapsulation so as to maximize the volumetric densities of capacity, energy, and power of the resulting electrochemical device.
  • FIG. 12 shows another embodiment of the present invention, which depicts a configuration variant of the electrochemical device shown in FIG. 2 and termed inverted thin-film battery configuration.
  • the negative anode 610 is chosen from the same materials and fabricated by the same methods as described for FIG. 2 , when deposited directly onto substrate 600 , which in turn is electrically conducting and chemically inert, such as, for example, Cu foil, to the anode 610 .
  • the substrate also serves as the anode current collector and negative terminal of a battery. If the substrate 600 is electrically insulating, then an additional anode current collector, consisting of, for example, Cu or Ni, may be interposed between said substrate 600 and the negative anode 610 (not shown).
  • Electrode current collector may be accomplished, for example, by either extending the anode current collector beyond the edge of the encapsulation 650 or providing an opening in the substrate 600 .
  • the opening in the substrate may then be filled with a conductive material, such as a Cu paste, in a manner that this material makes electrical contact with the anode current collector.
  • the electrolyte 620 is deposited over the anode 610 .
  • the positive cathode 630 is deposited over the electrolyte 620 .
  • a cathode current collector 640 such as Al or Au, is fabricated on top of the positive cathode 630 . If encapsulation 650 is used on an electrochemical device, then one may provide an opening 660 in encapsulation 650 to allow electrical access to the positive cathode 630 .
  • an electrochemical device may be fabricated with inverted thin-film battery configuration using the elements, materials and methods described in regard to FIG. 11 .
  • Such an electrochemical device for example, is shown in FIG. 13 .
  • a negative anode 710 is directly deposited onto a chemically inert substrate 700 .
  • an electrically insulating layer 750 may be fabricated, which may be partially coated with an electrolyte 720 and may entirely tent over the anode 710 .
  • the positive cathode 730 may be deposited followed by a cathode current collector 740 .
  • a mechanical and chemical modulation layer 760 may be applied mainly over that area in the battery part of the electrochemical device which is defined by the cathode.
  • a barrier layer may be fabricated between the substrate and the battery part of the electrochemical device as described in U.S. patent application Ser. No. 11/209,536, entitled Electrochemical Apparatus with Barrier Layer Protected Substrate, filed 23 Aug. 2005, and incorporated by reference herein in its entirety.
  • one or more additional current collectors may be fabricated onto the barrier layer so as to improve the electrical contact to the positive cathode, the negative anode or both.

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Abstract

An electrochemical device is claimed and disclosed wherein certain embodiments have a cathode greater than about 4 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick. Another claimed and disclosed electrochemical device includes a cathode greater than about 0.5 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick, wherein the cathode is fabricated by a non-vapor phase deposition method. A non-vacuum deposited cathode may be rechargeable or non-rechargeable. The cathode may be made of CFx (carbon fluoride) material, wherein, for example, 0<x<4. The electrochemical device may also include a substrate, a current collector, an anode current collector, encapsulation and a moderating layer.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • The present application is a continuation of U.S. patent application Ser. No. 14/041,575, filed Sep. 30, 2013, which is a continuation of U.S. patent application Ser. No. 11/748,471, filed May 14, 2007 (now Abandoned), which is a continuation of U.S. patent application Ser. No. 11/687,032, filed Mar. 16, 2007 (issued as U.S. Pat. No. 8,236,443), which is a continuation-in-part of U.S. patent application Ser. No. 11/561,277, filed Nov. 17, 2006 (issued as U.S. Pat. No. 8,445,130), which claims the benefits of the earlier filing dates of co-pending U.S. Provisional Application No. 60/782,792, filed Mar. 16, 2006; U.S. Provisional Application No. 60/759,479, filed Jan. 17, 2006; and U.S. Provisional Application No. 60/737,613, filed Nov. 17, 2005, which are all incorporated herein by reference in their entirety.
  • FIELD OF THE INVENTION
  • The field of this invention relates to electrochemical devices and methods of manufacturing thereof, and more particularly, the composition, method of depositing, and fabrication of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.
  • BACKGROUND
  • Thick positive cathodes are good for creating energy-rich thin-film batteries. A thick positive cathode substantially increases the active cathode mass per unit area. Unfortunately, producing such cathodes with typical vacuum vapor phase processes has been problematic.
  • Cathodes made with a typical vacuum vapor phase method have a number of limitations. For instance, vacuum vapor phase deposited materials typically grow in columns as schematically shown in FIG. 1. This figure depicts schematically and in cross-sectional view three microscopic columns, grown by a vacuum vapor phase deposition method, of the positive cathode layer of an electrochemical device. As the columns grow through the process, the bases of these columns remain anchored to the substrate surface and the cross sectional area of these bases remains virtually fixed as the height of the columns grows. As the height of the columns increases, the aspect ratio (height of column/width of column) increases and the cathode film consisting of these columns and thus the entire device becomes mechanically unstable, typically around an aspect ratio of 15. Thus, there are limitations to the height, and therefore the thickness, of columns grown with a vacuum deposition processes. Limitations on the height directly correspond to the thickness of the cathode and the energy of an electrochemical device per unit area that can be produced using a vacuum vapor phase deposition method. Furthermore, thick cathodes take a relatively long time to grow using a vacuum vapor phase process and are, therefore, quite expensive. For instance, LiCoO2 positive cathodes grown in a vacuum vapor phase deposition method above about 3 μm become overly expensive because of their long deposition time.
  • Thus, there is demand for electrochemical devices whose cathodes can be produced thick and reliably while being fabricated quickly and inexpensively. Further, it would be desirable to accomplish these demands using any of the many well-known non-vapor phase deposition techniques and processes, such as slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition, sol-gel deposition, spray coating, dip coating, and ink-jetting, to name a few.
  • Depositing a thicker cathode in order to increase the energy of an electrochemical device per unit area results in an increased, overall thickness of the device. Because an overall thickness increase of a milli, micro, or nano device is typically undesirable, the device manufacturer has to explore options of how to compensate for or offset such a thickness increase. A generally valid and desirable approach is to minimize the thickness and volume of all of the non-energy providing components inside an electrochemical device.
  • One of the options is to reduce the non-energy providing packaging of an electrochemical device. Both the encapsulation and the substrate are inherent and usually large, fractional parts of the packaging.
  • For instance, the reduction of an encapsulation thickness from 100 micrometers, which is a typical thickness for a laminate encapsulation, to a true thin-film encapsulation in the range of 1-10 micrometers would allow the electrochemical device manufacturer, for example, to increase the thickness of the energy bearing cathode by almost 100 micrometers without any discernible overall thickness change of the device. This design approach substantially improves the volumetric quantities of energy, capacity, and power of the electrochemical device. Because these physical performance quantities are required to be delivered in the smallest volume possible for most any milli, micro, or nano electrochemical device, the reduction of the non-energy providing components inside an electrochemical device is critically important for its acceptance in the marketplace.
  • The other option is to fabricate an electrochemical device onto the thinnest possible substrate, if used, traded or sold as a standalone device. This is different from the non-standalone case wherein the device manufacturer may exploit an existing, free surface in an electronic device (chip surface, printed circuit board surface, etc.) and then directly integrate, fabricate or deposit the electrochemical device onto that free surface. This surface then serves as the electrochemical device's substrate as well. One may consider such an electrochemical device being configured with a zero-thickness substrate because no further substrate thickness was introduced by the electrochemical device into the final electronic device. In the more common, standalone case, however, the limits of substrate thinness are reached when it does not provide adequate chemical and physical, mainly mechanical, protection or functionality anymore to support the electrochemical device. Because most vacuum deposited cathode materials require high-temperature processing to fully develop all of their physical properties, which in turn creates film stresses that are translated into the substrate, the mechanical properties of these vacuum vapor deposited cathode materials may challenge any substrate in terms of mechanical deformation.
  • The typical result of vacuum vapor phase deposited films in conjunction with high-temperature processing is a bending, warping, or general deformation of the substrate and thus the entire electrochemical device. If this situation occurs, then completing the fabrication of the electrochemical device becomes difficult, in addition to the mere fact that a deformed electrochemical device is not well suited for device integration. In contrast, non-vapor phase deposited cathode materials may be fabricated with most or even all of their important physical properties already developed at the time of deposition, so that any high-temperature processing becomes redundant. Hence, non-vapor phase deposited cathode materials and other components of an electrochemical device create less stress in the substrate and allow the use of a thinner substrate without the risk of substantially deforming it.
  • Accordingly, there is also a need for capsulation that exhibits fairly high-temperature characteristics.
  • Thus, there is demand for an electrochemical device (i) whose cathode can be produced thick and reliably while being fabricated quickly and inexpensively, (ii) whose substrate thickness is as thin as possible while not being deformed by the component layers of the electrochemical device, (iii) whose encapsulation is fabricated as thin as possible while still providing adequate protection against the ambient in which these devices are operated, and/or (iv) whose encapsulation is composed of high-temperature materials that provide the entire electrochemical device with increased thermal resilience.
  • SUMMARY
  • Various aspects and embodiments of the present invention, as described in more detail and by example below, address certain of the shortfalls of the background technology and emerging needs in the relevant industries.
  • One aspect of the invention is an electrochemical device comprising a positive cathode greater than about 0.5 μm and less than about 200 μm thick; a thin electrolyte less than about 10 μm thick; and an anode less than about 30 μm thick. The device may also comprise a substrate, current collectors, terminals, a moisture protection layer, and an encapsulation. In an embodiment of the invention, the cathode may be greater than about 5 μm and less than about 100 μm thick. The cathode may also be greater than about 30 μm and less than about 80 μm thick.
  • Another aspect of the invention is an electrochemical device comprising a non-vapor phase deposited cathode, an anode, and an electrolyte that is less than 10 μm thick. In an embodiment of the invention, the cathode may be greater than about 0.5 μm and less than about 200 μm thick, and the anode may be less than about 30 μm thick.
  • A cathode in accordance with an aspect of an embodiment of the invention may be non-vapor phase deposited. The cathode may be deposited by one of the following methods: slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition or ink-jetting.
  • The cathode may comprise LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, and any mixture or chemical derivative thereof. Alternatively these cathode materials may be doped with elements from the groups 1 through 17 of the periodic table.
  • In an embodiment, the electrolyte may comprise lithium phosphorus oxynitride (LiPON). The electrolyte may comprise a thin-film electrolyte. The electrolyte may be deposited by a vacuum vapor phase growth method or non-vapor phase method.
  • The anode may comprise lithium, a lithium alloy or a metal, which can form a solid solution or a chemical compound with lithium, or a so-called lithium-ion compound suitable for use as a negative anode material in lithium based batteries, such as, for example, Li4Ti5O12.
  • In a further aspect of an embodiment of the invention, an electrochemical device may also be encapsulated with an encapsulation process selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination as described by Snyder et al. in U.S. Pat. No. 6,916,679, the contents of which are hereby incorporated herein by reference in its entirety, metal foil attachment, and metal canning.
  • The device may further comprise a cathode current collector and an optional anode current collector on top or underneath of the thin electrolyte layer. The electrolyte immediately underneath the optional anode current collector may be protected by a moisture barrier, such as ZrO2, if the encapsulation has an opening that allows the optional anode current collector to be in direct contact with ambient atmosphere.
  • According to an aspect of an embodiment of the present invention, non-vapor phase fabrication methods may be used to form a positive cathode, and the cathode combined with cell components of an electrochemical device that are all, or in part fabricated by vacuum vapor phase methods. Exemplary embodiments that utilize such a combination of different methods are viewed as hybrid fabrication methods and resulting devices, for example, a “hybrid thin-film battery.”
  • In another aspect of an embodiment of the invention, the non-vapor phase fabrication of the positive cathode does not require a high-temperature fabrication step, which limits the stress development inside the component layer stack of an electrochemical device. This in turn allows use of a thinner substrate. Although thinner substrates may be prone to undesirable deformation under a given magnitude of stress, tradeoffs from using a thin substrate include a thinner electrochemical device for a given energy, capacity, and power performance. In other words, the use of a thinner substrate allows for increases in the volumetric quantities of energy, capacity, and power of an electrochemical device.
  • In another aspect, the cathode may be vacuum vapor phase grown, or fabricated by a non-vapor phase method, and then may be mechanically embossed or otherwise formed into structures that increase its surface area within the same previously coated footprint, but with resulting increased maximum thickness and decreased minimum thickness. This structure or architecture minimizes the average distance of any volume element inside the cathode relative to the neighboring solid state thin-film electrolyte layer, which, unlike in electrochemical devices with gel or liquid type electrolytes, typically does not intimately penetrate the cathode bulk. Therefore, minimizing the average distance of any volume element inside the cathode relative to the solid state thin-film electrolyte reduces the ionic diffusion lengths during operation of the electrochemical device, which in turn improves its power capability.
  • A further aspect of an embodiment of the invention involves mixing electronic conducting material such as carbon into an embossed or other surface-increased cathode structure to minimize electronic diffusion lengths inside the cathode bulk to improve the power capability of an electrochemical device.
  • In another aspect of an embodiment of the invention, an electrochemical device includes a thin-film encapsulation comprising or consisting of inorganic material that exhibits fairly good high-temperature characteristics.
  • In another aspect of an embodiment of the invention, a thin-film encapsulation is used to minimize the thickness contribution of the encapsulation to the overall thickness of the electrochemical device.
  • In another aspect, a thin encapsulation, such as a thin-film encapsulation, can overcompensate or at least compensate in full, or in part for any thickness increase of the cathode relative to the overall thickness of the electrochemical device. In addition, and compared with, for example, a pressure-heat laminate, the use of a thinner encapsulation directly increases the volumetric quantities of energy, capacity, and power of a given electrochemical device.
  • In yet another aspect of an embodiment of the invention, a thin-film encapsulation consists of multiple inorganic layers that all exhibit intrinsic, high-temperature stability, a characteristic that raises to some extent the temperature stability and resilience of the entire electrochemical device.
  • BRIEF DESCRIPTION OF THE FIGURES
  • The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention that together with the description serve to explain the principles of the invention. In the drawings:
  • FIG. 1 schematically shows a cathode with columns grown according to methods used in the prior art.
  • FIG. 2 illustrates a hybrid thin-film electrochemical device according to an exemplary embodiment of the present invention.
  • FIG. 3 shows a cross-sectional view of a scanning electron micrograph of a composite LiCoO2 cathode deposited by slurry coating and then coated with a LiPON thin-film electrolyte according to an exemplary embodiment of the invention.
  • FIG. 4 illustrates the electrochemical cycle behavior of an electrochemical device using the composite LiCoO2 cathode and the LiPON thin-film from FIG. 3 according to an exemplary embodiment of the invention.
  • FIG. 5 depicts a scanning electron micrograph of a 9 μm thick, fully crystalline LiCoO2 positive cathode film fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 6 shows the current-discharge voltage performance of a thin-film electrochemical device whose LiCoO2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 7 shows the reversible discharge capacity as a function of cycle number of a thin-film electrochemical device whose LiCoO2 positive cathode was fabricated by electrophoretic deposition according to an exemplary embodiment of the invention.
  • FIG. 8 shows a scanning electron micrograph of an about 15 μm thick, fully crystalline LiCoO2 positive cathode film deposited by ink-jetting according to an exemplary embodiment of the invention.
  • FIG. 9 shows a hybrid thin-film electrochemical device without a substrate according to an exemplary embodiment of the present invention.
  • FIG. 10 shows a multi-layer thin-film used to encapsulate an electrochemical device according to an exemplary embodiment of the present invention.
  • FIG. 11 shows the electrochemical device shown in FIG. 2, including a modulating LiPON layer and a multi-layer thin-film encapsulation layer according to an exemplary embodiment of the present invention.
  • FIG. 12 shows an inverted thin-film battery configuration according to an exemplary embodiment of the present invention.
  • FIG. 13 shows an exemplary embodiment of an inverted thin-film battery.
  • FIG. 14 shows an exemplary embodiment of an embossed cathode layer.
  • DETAILED DESCRIPTION
  • FIG. 1 illustrates a schematic cross-sectional view of a typical cathode layer 120 fabricated onto a metal current collector 101 over a substrate 100. In electrochemical devices produced by vacuum vapor phase deposition processes, the cathode may grow, for example, in columns 120 with inter-columnar void space 111. Also shown in FIG. 1 is a next layer in the fabrication process sequence of the thin-film electrochemical device, the electrolyte 110 with a typical bridging structure over the inter-columnar void space 111.
  • FIG. 2 shows a hybrid thin-film electrochemical device with a cathode 210 deposited without using a vacuum vapor phase process according to an exemplary embodiment of the present invention. In this embodiment, a cathode 210 is directly deposited onto a substrate 200. If metallically conducting, for example, the substrate 200 in this embodiment may also serve as the cathode current collector. Otherwise, a metallically conducting current collector (not shown) may be interposed between the substrate 200 and the cathode 210. The cathode 210, for example, may comprise LiCoO2, LiMn2O4, LiMnO2, LiNiO2, LiFePO4, LiVO2, or any mixture or chemical derivative thereof. The cathode 210, for example, in one embodiment, may be between about 0.5 μm and about 200 μm thick. In a preferred embodiment, the cathode 210, for example, may be between about 5 and about 100 μm thick. In a most preferred embodiment, for example, the cathode 210 may be between about 30 to about 80 μm thick.
  • As shown in FIG. 2, an electrolyte layer 220 may be deposited on the top surface of the cathode layer 210. The electrolyte layer may, for example, comprise lithium phosphorus oxynitride (LiPON) or other solid state thin-film electrolytes such as LiAlF4, as discussed in U.S. Pat. No. 4,367,267, or Li3PO4 doped Li4SiS4, as discussed by Yamamura et al. in U.S. Pat. No. 5,217,826. Both of these patents are incorporated herein in their entirety by reference. This electrolyte layer 220 may, for example, be less then about 10 μm thick.
  • The cathode 210 is thick when compared to the relative sizes of the electrolyte 220, substrate 200, and an anode 230 formed over the electrolyte 220. In other embodiments, the relative size of the cathode 210 is also thick in comparison to the anode current collector 240, as well as a thin-film encapsulation 250.
  • The electrolyte 220 may be deposited on the cathode 210 using a variety of methods. These methods may include, for example, vacuum vapor phase growth methods or non-vapor phase methods. Vacuum vapor phase methods may include, for example, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, plasma enhanced chemical vapor deposition or the like. Non-vapor phase methods may include, for example, spin coating, ink-jetting, thermal spray deposition or dip coating. Spin coating is discussed, for example, by Stetter et al. in U.S. Pat. No. 4,795,543; Venkatasetty in U.S. Pat. No. 4,948,490; or Schmidt et al. in U.S. Pat. No. 6,005,705. One such ink-jetting process is disclosed by Delnick in U.S. Pat. No. 5,865,860. A thermal spray deposition process is disclosed by Inda in U.S. Patent Publication No. 2004/0106046. Dip coating is discussed by Kejha in U.S. Pat. No. 5,443,602 and U.S. Pat. No. 6,134,773. Each of the above patents and patent publications is incorporated herein by reference in its entirety.
  • As shown in FIG. 2, the next layer on top of the electrolyte is the thin negative anode layer 230. The thin anode 230 may comprise, for example, lithium, lithium alloys, metals that can form solid solutions or chemical compounds with lithium, or a so-called lithium-ion compound that may be used as a negative anode material in lithium based batteries, such as, for example, Li4Ti5O12. The thin anode layer 230, for example, may be less than about 30 μm thick. The thin anode may make contact with the anode current collector 240, which can be accessed electrically through an opening 260 in the encapsulation 250. In one embodiment the anode current collector is less than about 2 μm thick. The thin-film encapsulation 250, for example, may be electrically conducting in certain areas and thus may, in some embodiments, serve as an anode current collector. In such embodiments, a separately deposited anode current collector 240 would not be necessary. The thin-film encapsulation 250 may, for example, be less than about 250 μm thick.
  • The cathode 210 in FIG. 2 may be deposited on the substrate 200 using a variety of deposition methods. In one specific embodiment, the cathode material 210 is deposited using a non-vapor phase deposition method. Non-vapor phase deposition methods are not performed in a vacuum environment. A number of non-vapor phase deposition methods are known in the art. A few exemplary methods include, slurry coating, Meyer rod coating, direct and reverse roll coating, doctor blade coating, spin coating, electrophoretic deposition, sol-gel deposition, spray coating, dip coating, and ink-jetting, to name a few. Any other non-vapor phase deposition methods or methods that do not require deposition in a vacuum may be used without deviating from the spirit, scope or embodiments of the present invention. These non-vapor phase, non-vacuum deposition methods may produce a single phase cathode or a composite cathode. The composite cathode may be deposited either on a nanoscopic, microscopic, or milliscopic scale and may consist of organic and/or inorganic matter which, in addition, may be polymerized, such as poly(vinyl pyrrolidone), sulfur nitride (SN)x, nano-tubed carbon or acetylene black.
  • All of the depositions mentioned herein, may, for example, be followed by a drying step with temperatures below about 150° C., and/or a low-temperature drying and adhesion improving step with temperatures between about 150° C. to about 400° C., and/or a high temperature anneal step ranging from about 400° C. to about 1000° C. These steps may help, for example, in drying, improving adhesion, formation of the correct film phase, and/or crystallization. The cathode deposition material may be used either in pure form or mixed with binder material, with or without carbon-type, metal-type or alloy-type electrical conduction enhancers. When the cathode material comprises a mixed form rather than a pure form, such cathode materials may be composite cathode materials.
  • The method of slurry coating has been used in battery fabrication as shown, for example, by Hikaru et al. in U.S. Pat. No. 6,114,062, or by Kinsman in U.S. Pat. No. 4,125,686, which are incorporated herein in the entirety by reference. Slurry coating may lead to the deposition of a composite electrode consisting of the electrochemical active material, which is in the form of finely dispersed powder particles that are bonded together using a polymeric binder and some form of electrical conduction enhancer, such as carbon black or the like. Also, the slurry contains solvents which need to be evaporated and/or pyrolyzed after film deposition.
  • According to an exemplary embodiment, a composite cathode may be deposited from slurry including or consisting of fully crystalline LiCoO2 powder, a polyimide binder, and a graphite electrical conduction enhancer. This slurry may then be coated onto an Al foil substrate and dried at temperatures below about 150° C. in ambient air for less than about 2 days. Subsequently, in this embodiment, the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • In an exemplary another embodiment, the dried slurry coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • The cathode 210 in FIG. 2 may be modified as shown, for example, in FIG. 14 through mechanical displacement or removal means including embossing, stamping, abrading, scraping, forming and the like. This layer modification may be performed on either the wet or completely dried cathode. This cathode surface modification improves the ion transfer efficiency between the cathode bulk and the thin-film electrolyte, for example, consisting of a LiPON layer (not shown), and thus improves the power performance of the electrochemical device.
  • Further improvement in power capability may be accomplished when cathode 210 comprises a composite material including or consisting of at least the electrochemically active cathode material, for example LiCoO2, and a carbonaceous electronic conduction enhancer, which serves to minimize the electronic diffusion lengths inside the composite cathode bulk.
  • FIG. 3 shows a cross-sectional view of a scanning electron micrograph showing an exemplary LiPON coated composite cathode. The dimension calibration bar at the very left side in the left picture is about 9 μm long; and the one in the insert picture on the right side represents a length of about 3 μm.
  • An electrochemical cycling performance of an electrochemical device according to an exemplary embodiment of the present invention is shown in FIG. 4.
  • According to an exemplary embodiment of the invention, a composite cathode may be deposited by Meyer rod coating of a viscous suspension or solution containing, for example, LiCoO2 powder, as described by Principe et al. in U.S. Pat. No. 6,079,352, which is incorporated herein by reference in its entirety. Alternatively, a polymeric binder, such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed. This coating on a substrate, such as an Al foil substrate, may then be dried at temperatures below, for example, about 150° C. in air for less than about 2 days. Subsequently, in this embodiment the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • In an exemplary embodiment, a dried Meyer rod coating may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • According to an exemplary embodiment of the invention, a composite cathode may be deposited by direct and/or reverse roll coating of a viscous suspension or solution, containing, for example, LiCoO2 powder as described by Davis et al. in U.S. Pat. No. 3,535,295, which is incorporated herein by reference in its entirety. Alternatively, a polymeric binder, such as, for example, a polyimide, and/or an electrical conduction enhancer, such as graphite, may be admixed. This coating onto a substrate, such as an Al foil substrate, may then be dried at temperatures below about 150° C. in ambient air for less than about 2 days. Subsequently, in this embodiment, the cathode may be coated, for example, with an about 2 μm LiPON thin-film electrolyte, an about 3 μm thick Li negative anode, and an about 0.3 μm thick Cu anode current collector. Finally, an about 100 μm thick heat and pressure sensitive metal-polymer laminate, which may serve to encapsulate the electrochemical device, may be applied to the electrochemical device so that the electrochemical performance of the device may be tested in the ambient.
  • In an exemplary embodiment, a dried direct or reverse roll coated deposit may require an additional drying, adhesion, formation, and/or crystallization steps at temperatures up to, for example, about 1000° C., as described above, to finalize the structure of the cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • According to an exemplary embodiment of the invention, a thick cathode may be deposited on a substrate via a doctor blade technique as disclosed by Brown in GB Patent No. 947518, which is incorporated herein in its entirety by reference. This deposition method is analogous to spreading butter. Accordingly, for example, a fine blade slices into some cathode material paste, consisting of the electrochemically active material, in precursor or final form, mixed with solvents, binders, and potentially electrical conduction enhancer materials, and then spreads the cathode material paste under a certain thickness directly onto a substrate. Depending on the formulation of the cathode material paste, additional drying, adhesion, formation and/or crystallization steps at temperatures of up to about 1000° C., as described above, may be used to form the final cathode or composite cathode. This method is quick, simple and can produce thick cathodes without using a vacuum vapor phase method. Furthermore, the resulting cathode does not have the mechanical instability as those produced by vacuum vapor phase deposition methods.
  • Spin coating is used in the thin-film coating industry, using a variety of standard spin coaters offered by many well-known manufacturers, such as Hitachi disclosed in JP Patent No. 1320728 and incorporated herein by reference in its entirety. Using a spin coating technique, a cathode powder is suspended or dispersed in a solvent of a low boiling point (high volatility), such as, for example, water, low-molecular mass alcohols, low-molecular mass ethers, low-molecular mass ketones, low-molecular mass esters, low-molecular mass hydrocarbons, etc. This suspension may then be dropped onto a fast spinning substrate (typically about 1000-3000 rpm) and is thus spread out quickly into a thin-film over the substrate due to the high centrifugal forces exerted on the droplets. Because of the extremely low mass or volume per unit area, thin-films of a volatile solvent evaporate quickly leaving the solute or suspended or dispersed material precipitated on the substrate. The spin coating process may be repeated multiple times so as to increase the thickness of a given film. To further the evaporation process of the solvent and the precipitation of the solute, or suspended or dispersed material, the spinning substrate may be heated. Alternatively, the spin coating suspension may additionally contain binder material or binder precursor material as well as electrical conduction enhancer material. All of these materials do not and are not intended to evaporate during the spin-coating process, either conducted at ambient conditions or at elevated temperatures, as described above, and/or vacuum. Depending on the spin coating suspension formulations, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • According to an exemplary embodiment of the present invention, a non-vapor phase LiCoO2 cathode film may be developed using electrophoretic deposition as discussed by Kanamura et al. in 3 Electrochem. Solid State Letters 259-62 (2000) or by Lusk in GB Patent No. 1298746, both of which are incorporated herein by reference in their entirety. For example, micron size, fully crystallized LiCoO2 particles may be suspended in a solution of acetone, isopropanol, and/or iodine and may enable the electrophoretic deposition of, for example, an about 9 μm thick, fully crystalline LiCoO2 cathode film onto stainless steel substrate without any columnar structure. This process may be performed, for example, at less than about 120VDC within about 30 minutes at room temperature.
  • FIG. 5 depicts a scanning electron micrograph of an exemplary positive cathode film in cross-sectional view deposited with electrophoretic deposition. The potential iodine impurity concentration of the film shown in the figure is below the detection limits (<1 wt %) of the energy dispersive x-ray spectroscopic method employed. Electrochemical cells may also be fabricated with thinner LiCoO2 composite cathodes by electrophoretic deposition, for example, in a solution consisting of about 200 ml acetone, about 23 mg I2, about 38 mg carbon black, and about 53 mg poly(tetrafluoroethylene) (PTFE) into which about 1 g of fully crystalline LiCoO2 particle powder was suspended. In such an embodiment, the driving voltage of 50VDC for this electrophoretic deposition may be applied, for example, for about 30 seconds. Following which, the so-deposited LiCoO2 composite film may be annealed at approximately about 377° C. in air for about 4 hours to improve adhesion to the conductive substrate. Subsequently, the fabrication of the electrochemical device may be completed by depositing an about 2 μm thick LiPON electrolyte using RF magnetron sputter over the LiCoO2 composite cathode, then fabricating approximately about 0.3 μm thick Cu anode current collector film by electron beam evaporation, which may then be followed by a thermal (resistive) vacuum deposition of an about 3 μm thick metallic Li anode. The current-discharge voltage performance of such an electrochemical device is presented in FIG. 6, while its electrochemical cycle stability is shown in FIG. 7. Depending on the formulation of the electrophoretic suspension, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • According to an exemplary embodiment, a thick cathode may be deposited using a sol-gel method. In this embodiment, for example, an oxidic cathode film material to be deposited is provided in a precursor state, such as aqueous or alcoholic sols or gels of lithium and cobalt ions that are electrically balanced by anionic counter ions or chelates. These anionic counter ions or chelates may comprise, for example, nitrate, glycolate, hydroxide, citrate, carboxylates, oxalate, alcoholate, or acetylacetonate. Such formulations may be dip coated or sprayed onto the substrate and then dried at elevated temperatures for extended periods of time, for example, less than 2 days. In addition, the so-fabricated films may be subjected to a high-temperature pyrolysis process so as to convert the anionic counter ions or chelates quantitatively into pure oxides. This method is discussed in the Ph.D Thesis of Bernd J. Neudecker, Stuttgart, Germany (1994); by Plichta et al., in 139 J. Electrochem. Soc. 1509-13 (1992); and by Nazri, U.S. Pat. No. 5,604,057. Alternatively, the sol-gel may additionally contain binder material or binder precursor material, as well as electrical conduction enhancer material. All of these additives do not, and are also not intended to evaporate during the drying process, either done at ambient conditions or at elevated temperatures, as described above, and/or vacuum. Depending on these sol-gel formulations, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • In an exemplary embodiment of the present invention, the thick cathode may be deposited using an ink-jet method. Ink-jetting of oxide film electrodes is discussed by Watanabe Kyoichi et al. in JP 2005011656, Speakman in U.S. Pat. No. 6,713,389 and Hopkins et al. in U.S. Pat. No. 6,780,208, which are incorporated herein in their entirety by reference. In one embodiment of the present invention, fully crystallized LiCoO2 powder may be milled to about 0.55 μm in average particle size, and then dispersed in an aqueous solution of about 0.05 vol % iso-octanol, about 5 vol % isopropanol, about 10 vol % ethylene glycol monobutyl ether, and about 10 vol % ethylene glycol. This solution may then be sonicated for about 1 hour to form a suitable ink-jet solution. The LiCoO2 films may then be deposited through a print head and wetted ceramic, for example, about 250 μm thick Al2O3 plates, and a stainless steel substrates well, for example, an about 50 μm foil. Subsequent to the printing, the as-deposited LiCoO2 films may be dried in air at about 200° C. for about 2 hours in order to drive off excess solvent and improve the adhesion of the LiCoO2 film to its substrate. A dried LiCoO2 film thickness of about 15 μm may be achieved based on ten print head passes over the same substrate region. A cross-sectional scanning electron micrograph view of such a LiCoO2 film is shown in FIG. 8. Alternatively, the ink-jet solution or suspension may contain binder material, binder precursor material, and/or electrical conduction enhancer material. If used, each of these materials do not, and are also not intended to evaporate during the drying process, whether at ambient conditions or at elevated temperatures, as described above, and/or in a vacuum. Depending on these formulations of the ink-jet solution or suspension, an additional drying, adhesion, formation, and/or crystallization step at temperatures of up to about 1000° C., as described above, may be required to form the final cathode or composite cathode.
  • According to an exemplary embodiment, a cathode fabricated by a non-vapor phase deposition may be coated, in its finished or unfinished state, for example, with an inert, metallically conducting layer, such as gold. Subsequently, a finished or unfinished cathode and an inert, metallically conducting coating may be, for example, heated together for further drying, adhesion, formation, and/or crystallization during which processes the inert, metallically conducting coating may be substantially absorbed into the pores, voids, and crevices of the cathode, thus improving the electrical conduction of the cathode.
  • The anode in the exemplary embodiments described above may be deposited using a variety of methods. For example, the anode material may be deposited using a vacuum vapor phase growth method, or a non-vapor phase growth method, such as ink-jetting or dip coating.
  • An exemplary embodiment of the present invention includes depositing a negative anode material via a vacuum vapor phase growth method. Typical vapor phase growth methods for negative anodes include, but are not limited to, reactive or non-reactive RF magnetron sputtering, reactive or non-reactive DC diode sputtering, reactive or non-reactive thermal (resistive) evaporation, reactive or non-reactive electron beam evaporation, ion-beam assisted deposition, or plasma enhanced chemical vapor deposition. The negative anode may either be, for example, metallic lithium, a lithium alloy, or a metal that can form a solid solution or a chemical compounds with lithium.
  • Other exemplary embodiments may include non-vapor phase growth methods for depositing a negative anode. For example, non-vapor phase growth methods, such as ink-jetting of metallic lithium powder mixtures may be used to deposit a negative anode. Such methods are described by Nelson et al. in U.S. Patent Publication No. 2005/0239917. As well, for example, one could simply dip a sample into molten lithium under a protective atmosphere and allow the resulting film on the sample to cool and solidify. Analogously, one may fabricate a lithium-ion anode, such as metallic tin, by dipping a sample into molten tin under air atmosphere or transfer the molten or hot tin on a flattened face of a, for example, rod and then stamp the tin onto the sample.
  • A dip coating technique via sol-gel route may similarly work for depositing negative anode materials as described, for example, by Patrusheva et al. in RU Patent No. 2241281C2, which is incorporated herein by reference in its entirety. For example, SnO2 based Li-ion anodes using suitable anionic formulations of alkoxides may be used, as described by Toki Motoyuki in U.S. Pat. No. 6,235,260, which is also incorporated herein by reference in it entirety.
  • FIG. 9 shows an exemplary hybrid thin-film electrochemical device fabricated without a substrate according to an embodiment of the present invention. This device is similar to that shown in FIG. 2, but does not have a substrate. Instead, the device is spatially terminated by a thin metal layer 300 that may be used, for example, as a current collector and electrical terminal. In addition to this thin metal layer 300, the device in FIG. 9 comprises at least a cathode 310, an electrolyte 320, and an anode 330.
  • The embodiments described above may be encapsulated using an encapsulation 350 selected from the group consisting of vacuum vapor phase grown thin-film encapsulation, pressure-heat lamination of protective polymer composites as described by Snyder et al. in U.S. Pat. No. 6,916,679, pressure-heat lamination of metal foils coated with pressure-heat sensitive adhesive surfaces, and metal canning.
  • An anode current collector 340, such as Zr may be interposed between the electrolyte 320, the anode 330, and the encapsulation 350. Furthermore, a moisture barrier may be applied between the anode current collector 340 and the underlying moisture sensitive electrolyte 320 to protect latter from the environment. A material having moisture blocking properties may be selected: a) from the group of metals, semi-metals, alloys, borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides; b) from the group of any multinary compounds composed of borides, carbides, suicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, and iodides; or c) from the group of high-temperature stable organic polymers and high-temperature stable silicones. This moisture barrier, for example, may comprise ZrO2 or ZrN and may be part of the anode current collector 340 that may be gradiented in terms of its oxide or nitride content thus reaching a stoichiometry of ZrO2 or ZrN near the interface to the electrolyte.
  • FIG. 10 shows an embodiment of an electrochemical device with a multilayer thin-film encapsulation material. The multilayer thin-film encapsulation 400 may be comprised, for example, of multiple strong metallic getter layers 410 with alternating amorphous or glassy oxide or nitride layers 420 thereof. The strong metallic getter layers 410 are used to protect the device from moisture and oxygen based on their superior gettering ability for H2O and O2. The strong metallic getter layers may, for example, be comprised of Zr, Y, Ti, Cr, Al, or any alloy thereof. The glassy or amorphous layers 420 may be the oxides or nitrides of the metal or metals used in the getter layers, such as, for example, ZrO2, ZrN, Y2O3, YN, TiO2, TiN, Cr2O3, CrN, Al2O3, AIN, or any multi-element compound thereof. The mechanically dense glassy or amorphous layers being substantially free of grain boundaries may, for example, effectively block any moisture or oxygen diffusion through said oxides or nitrides. As a result, the multilayer thin-film encapsulation may effectively protect the underlying, air sensitive metallic anode.
  • In another exemplary embodiment, for example, the multilayer thin-film encapsulation consists of inorganic high-temperature stable or resilient materials. Using such an encapsulation increases the high temperature stability of the electrochemical device as compared with an electrochemical device that employs polymeric components in its encapsulation, such as is the case in the above-mentioned pressure-heat laminated encapsulation described by Snyder et al. in U.S. Pat. No. 6,916,679.
  • Another exemplary embodiment of inorganic high-temperature stable or resilient materials may include a multilayer thin-film encapsulation having vacuum vapor phase deposited alternating layers. For example, a thin-film encapsulation may comprise or consist of 30 alternating 1000 Å thick layers of the sequence ZrO2 /Zr/ZrO2/Zr/ . . . or ZrN/Zr/ZrN/Zr/ . . . , although it is to be understood that different sized thickness, periods and materials may be used. These alternating layers may be deposited at less than about 100° C. substrate temperature in one vacuum chamber pump-down from ambient pressures, for example. Such an exemplary 30 multilayer thin-film encapsulation may, for example, be only about 3 μm thick and high-temperature stable to far above about 300° C.
  • As those skilled in the art will appreciate, the mere thinness of such a thin-film encapsulation directly increases the energy, capacity, and power of a given electrochemical device per unit volume (volumetric energy, volumetric capacity, and volumetric power) compared with an electrochemical device that uses a pressure-heat laminated encapsulation, which is typically thicker by at least one order of magnitude than the presented thin-film encapsulation of about 3 μm. For example, the volumetric quantities of energy, capacity, and power can increase three-fold when for a given electrochemical device of, for example, 150 μm in total packaged thickness, which may comprise an actual electrochemical cell of, for example, 10 μm in thickness, a, for example, 35 μm thick substrate, and a, for example, 100 μm thick pressure-heat laminate, the encapsulation is replaced by a thin-film encapsulation of, for example, 3 μm in thickness, which results in an overall thickness of the electrochemical device of 48 μm.
  • FIG. 11 shows an electrochemical device according to an exemplary embodiment of the present invention. In addition to the electrically conductive substrate 500, the positive cathode 510, the electrolyte film 520, the negative anode 530, the anode current collector 540, and the electrical insulation layer 550, this embodiment includes an encapsulation layer 570. This encapsulation may be, for example, a multilayer encapsulation as described above and as shown in FIG. 10. Between the encapsulation layer 570 and the anode 530, for example, a second LiPON layer 560 may be interposed. The encapsulation layer 570 may be fabricated onto the anode 530, which may comprise metallic lithium. The softness of the anode 530 material may cause the encapsulation layer 570 to crack due to the mechanically weak fundament provided by the soft anode 530 and/or the stress imbalance at the interface of the anode 530 encapsulation 570. Once cracked, the encapsulation 570 may cause exposure of the sensitive anode 530 to the ambient, which may destroy the anode. Using a glassy LiPON (or derivative) modulator layer 560, for example, may mechanically stabilize the soft anode surface while chemically encapsulating it.
  • FIG. 11, the cathode 510 may be thick when compared to the relative sizes of the electrolyte 520, substrate 500 (and cathode current collector in some embodiments), anode 530, anode current collector 540, electrical insulation layer 550, modulating LiPON layer 560, and thin-film encapsulation 570.
  • The underlying LiPON electrolyte layer 520 together with the overlying LiPON modulator layer 560 confine the interposed anode 530 while protecting it, not only mechanically, but also chemically. In this configuration, a metallic anode 530, such as, for example, metallic Lithium, may be melted when heated above its melting point at about 181° C. Due to its spatial confinement, chemical protection, and inertness towards LiPON well above the melting point of lithium, the metallic lithium anode 530 remains fixed at location and intact as a negative anode material inside of the described electrochemical device. This engineering design also enables the described electrochemical device being used in solder reflow processing or flip chip processing.
  • Many materials may be used as the anode, for example, copper lithium alloy or solid solutions, such as, LixCu, LixZr, LixV, LixW, LixBe, LixBeyCu, etc. Those skilled in the art will recognize these and other materials that may be used for the anode. These alloys or solid solutions of lithium may offer stronger mechanical properties compared with soft metallic lithium, and thus may allow the direct deposition of the multilayer thin-film encapsulation 570 without the use of the above-described LiPON modulator layer 560 interposed between the soft negative metallic anode 530 and the multilayer thin-film encapsulation 570. In such case, the LiPON modulator layer 560 may be redundant.
  • In an example of the embodiment shown in FIG. 11, an electrochemical device may be fabricated, for example, onto a 25.4 mm×25.4 mm large aluminum substrate of 25 μm in thickness (500), coated with a 80 μm×3.3 cm2 large LiCoO2 composite positive cathode consisting of 62 volume % of LiCoO2 powder and the volume balance of polymeric binder and electronically conducting carbon black powder (510), a 1.5 μm thin film of solid state LiPON electrolyte (520), a 10 μm thick negative, metallic lithium anode (530), a 0.5 μm thick nickel anode current collector (540), a 0.5 μm thick ZrO2 electrical insulation layer (550), a 0.5 μm thick LiPON modulator layer (560), and a 3 μm thick multilayer thin-film encapsulation layer consisting of fifteen 1000 Å thick Zr/1000 Å thick ZrO2 bi-stacks (570). In this example, the electrochemical device is 120 μm thick at its thickest cross-section and provides 10 mAh of continuous capacity within the voltage range of 4.2-3.0V with an average voltage of 4.0V, which results in a volumetric energy of 520 Wh/liter for the fully packaged electrochemical device. When using a 10 μm aluminum substrate instead of the 25 μm thick one, then the volumetric energy of this device increases from 520 Wh/liter to 590 Wh/liter.
  • In another exemplary embodiment, a barrier layer may be included. This barrier layer may be deposited onto a substrate, such as, for example, a metal foil substrate, wherein the barrier layer chemically separates the battery part (i.e., electrochemically active cell) from the substrate part of an electrochemical apparatus. The barrier may prevent diffusion of any contaminants entering the battery from the substrate as well as, for example, block ions from escaping the battery and diffusing into the substrate during both battery fabrication and during battery operating and storage conditions. Certain potentially suitable materials for a barrier layer may include poor ion conducting materials, for example, such as borides, carbides, diamond, diamond-like carbon, silicides, nitrides, phosphides, oxides, fluorides, chlorides, bromides, iodides, and any multinary compounds thereof. Of those compounds, electrically insulating materials may further prevent possible reactions between the substrate and the battery layers from occurring. For example, if a possible chemical reaction includes the diffusion of ions and electrons, an insulating barrier would provide a way to block the electrons, and thus prevent any such chemical reaction. However, a barrier layer may comprise electrically conducting materials as well, as long as they do not conduct any of the ions of the substrate or battery layer materials. For instance, ZrN is an effective conducting layer that will prevent ion conduction. In some cases metals, alloys, and/or semi-metals may serve as a sufficient barrier layer depending on the anneal temperatures applied during the battery fabrication process and substrate material used. The diffusion barrier layer may, for example, be single or multi-phase, crystalline, glassy, amorphous or any mixture thereof, although glassy and amorphous structures are preferred in some applications due to their lack of grain boundaries that would otherwise serve as locations for increased, but unwanted, ion and electron conduction.
  • A thin-film encapsulation layer, such as the one shown in FIGS. 10 and 11, may, for example, tent over the device. Therefore, a flexible encapsulation may, for example, be used to allow the device to expand and contract. The above-described glass-metal multilayer encapsulation possesses appropriate flexible properties, which can be tailored, for example, by changing the sputter deposition parameters, which then changes the densities of the glass and/or metal. Another approach to tuning the mechanical properties of the constituents of the thin-film encapsulation, and thus also the thin-film encapsulation itself may include changing the stoichiometry of one or more constituents of the thin-film encapsulant. For instance, ZrN can be changed to Zr2N, which is equivalent to depriving the particular composition of this layer of nitride. Alternatively, one can change the metals in the stack. For example, instead of a Zr, ZrN, Zr, ZrN stack, one could fabricate a multilayer thin-film encapsulation consisting of Zr, AlN, Cr, TiN.
  • Some of the embodiments above discuss a thick positive cathode that is inexpensive and reliable. The thick cathode may also be configured with a thin electrolyte, a thin anode, and a thin encapsulation so as to maximize the volumetric densities of capacity, energy, and power of the resulting electrochemical device.
  • FIG. 12 shows another embodiment of the present invention, which depicts a configuration variant of the electrochemical device shown in FIG. 2 and termed inverted thin-film battery configuration. The negative anode 610 is chosen from the same materials and fabricated by the same methods as described for FIG. 2, when deposited directly onto substrate 600, which in turn is electrically conducting and chemically inert, such as, for example, Cu foil, to the anode 610. In this particular configuration, the substrate also serves as the anode current collector and negative terminal of a battery. If the substrate 600 is electrically insulating, then an additional anode current collector, consisting of, for example, Cu or Ni, may be interposed between said substrate 600 and the negative anode 610 (not shown). Electrical access to this anode current collector may be accomplished, for example, by either extending the anode current collector beyond the edge of the encapsulation 650 or providing an opening in the substrate 600. The opening in the substrate may then be filled with a conductive material, such as a Cu paste, in a manner that this material makes electrical contact with the anode current collector. Using the same materials and methods as for the electrolyte in FIG. 2, the electrolyte 620 is deposited over the anode 610. Using the same materials and methods as for the positive cathode in FIG. 2, the positive cathode 630 is deposited over the electrolyte 620. To allow electrical access to the positive cathode 630, a cathode current collector 640, such as Al or Au, is fabricated on top of the positive cathode 630. If encapsulation 650 is used on an electrochemical device, then one may provide an opening 660 in encapsulation 650 to allow electrical access to the positive cathode 630.
  • Analogously, an electrochemical device may be fabricated with inverted thin-film battery configuration using the elements, materials and methods described in regard to FIG. 11. Such an electrochemical device, for example, is shown in FIG. 13. First, a negative anode 710 is directly deposited onto a chemically inert substrate 700. To avoid short-circuiting of an electrochemical device, an electrically insulating layer 750 may be fabricated, which may be partially coated with an electrolyte 720 and may entirely tent over the anode 710. After depositing the electrolyte 720, the positive cathode 730 may be deposited followed by a cathode current collector 740. To employ a thin-film encapsulation 770 over the existing layers in the fabrication sequence of the electrochemical device, a mechanical and chemical modulation layer 760, for example, may be applied mainly over that area in the battery part of the electrochemical device which is defined by the cathode. Those skilled in the art will appreciate that the invention covers additional inverted configurations, which may be achieved by way of combining constituent parts of the non-inverted batteries described above.
  • In another embodiment, a barrier layer may be fabricated between the substrate and the battery part of the electrochemical device as described in U.S. patent application Ser. No. 11/209,536, entitled Electrochemical Apparatus with Barrier Layer Protected Substrate, filed 23 Aug. 2005, and incorporated by reference herein in its entirety. Depending on the material and configuration of the barrier layer, one or more additional current collectors may be fabricated onto the barrier layer so as to improve the electrical contact to the positive cathode, the negative anode or both.
  • The embodiments described above are exemplary only. One skilled in the art may recognize variations from the embodiments specifically described here, which are intended to be within the scope of this disclosure. As such, the invention is limited only by the following claims. Thus, it is intended that the present invention cover the modifications of this invention provided they come within the scope of the appended claims and their equivalents. Further, specific explanations or theories regarding the formation or performance of electrochemical devices according to the present invention are presented for explanation only and are not to be considered limiting with respect to the scope of the present disclosure or the claims.

Claims (22)

1. An electrochemical device comprising:
a non-vapor phase deposited cathode;
a layer on the cathode;
an anode; and
a vapor phase deposited electrolyte deposited over the layer on said cathode, wherein the anode is positioned over the vapor phase deposited electrolyte.
2. The electrochemical device of claim 1, further comprising an encapsulation layer deposited over said anode, the encapsulation layer comprising a ceramic-metal composite laminate.
3. The electrochemical device of claim 2, wherein said ceramic-metal composite laminate is multiple alternating layers of (1) ceramic zirconium nitride and metal zirconium or (2) ceramic titanium mitride and metal titanium.
4. The electrochemical device of claim 2, wherein said ceramic-metal composite laminate comprises metallic sub-layers comprising at least one element selected from the group consisting of: zirconium and titanium.
5. The electrochemical device of claim 4, wherein said ceramic sub-layers comprise nitrides.
6. The electrochemical device of claim 2, further comprising a modulating layer between the encapsulation layer and the anode.
7. The electrochemical device of claim 2, wherein the encapsulation layer is at the periphery of said electrochemical device.
8. The electrochemical device of claim 1, further comprising a flexible circuit board, wherein said electrochemical device is positioned on the flexible circuit board.
9. The electrochemical device of claim 1, wherein said cathode comprises LiCoO2, said electrolyte comprises Lithium Phosphorus Oxynitride (LiPON), and said anode comprises Lithium.
10. The electrochemical device of claim 1, wherein said anode is lithium.
11. The electrochemical device of claim 1, wherein said electrolyte is Lithium Phosphorus Oxynitride (LiPON).
12. The electrochemical device of claim 1, wherein said cathode is LiCoO2.
13. The electrochemical device of claim 1, further comprising a substrate.
14. The electrochemical device of claim 1, wherein said electrolyte is a thin-film electrolyte.
15. The electrochemical device of claim 1, wherein said electrolyte comprises Lithium Phosphorus Oxynitride (LiPON).
16. The electrochemical device of claim 1, wherein said electrolyte is deposited directly on said cathode.
17. The electrochemical device of claim 1, wherein said electrochemical device is encapsulated with a material selected from ceramic multi-layer thin-film encapsulate, polymer composite, metal foil, adhesive, and metal can.
18. The electrochemical device of claim 1, wherein said electrochemical device is encapsulated with an encapsulation grown by a vacuum vapor phase process.
19. The electrochemical device of claim 18, wherein said encapsulation consists of a multilayer stack of inorganic compounds and metals.
20. The electrochemical device of claim 18, wherein said encapsulation is separated from the negative anode by an interposed modulation layer.
21. The electrochemical device of claim 1, further comprising a cathode current collector.
22. The electrochemical device of claim 1, further comprising an anode current collector.
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Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8394522B2 (en) * 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
GB2395059B (en) 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
TWI331634B (en) 2004-12-08 2010-10-11 Infinite Power Solutions Inc Deposition of licoo2
GB0601319D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd A method of fabricating pillars composed of silicon-based material
GB0601318D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material
EP2067163A4 (en) 2006-09-29 2009-12-02 Infinite Power Solutions Inc Masking of and material constraint for depositing battery layers on flexible substrates
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
GB0709165D0 (en) 2007-05-11 2007-06-20 Nexeon Ltd A silicon anode for a rechargeable battery
GB0713896D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Method
GB0713898D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries
GB0713895D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Production
US8268488B2 (en) * 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
WO2009089417A1 (en) * 2008-01-11 2009-07-16 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
WO2009124191A2 (en) 2008-04-02 2009-10-08 Infinite Power Solutions, Inc. Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
CN102119454B (en) 2008-08-11 2014-07-30 无穷动力解决方案股份有限公司 Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
KR101613671B1 (en) 2008-09-12 2016-04-19 사푸라스트 리써치 엘엘씨 Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
JP2012505411A (en) * 2008-10-08 2012-03-01 インフィニット パワー ソリューションズ, インコーポレイテッド Foot powered footwear embedded sensor transceiver
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
GB2464158B (en) 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2464157B (en) 2008-10-10 2010-09-01 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material
US8294060B2 (en) * 2009-05-01 2012-10-23 The Regents Of The University Of Michigan In-situ plasma/laser hybrid scheme
GB2470056B (en) 2009-05-07 2013-09-11 Nexeon Ltd A method of making silicon anode material for rechargeable cells
GB2470190B (en) 2009-05-11 2011-07-13 Nexeon Ltd A binder for lithium ion rechargeable battery cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
CN102498604A (en) * 2009-08-14 2012-06-13 密执安州立大学董事会 Direct thermal spray synthesis of li ion battery components
WO2011028825A1 (en) * 2009-09-01 2011-03-10 Infinite Power Solutions, Inc. Printed circuit board with integrated thin film battery
US20110117975A1 (en) * 2009-11-17 2011-05-19 Etymotic Research, Inc. Two-Way Communication Device
GB201005979D0 (en) 2010-04-09 2010-05-26 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US20110255250A1 (en) * 2010-04-19 2011-10-20 Richard Hung Minh Dinh Printed circuit board components for electronic devices
EP2577777B1 (en) 2010-06-07 2016-12-28 Sapurast Research LLC Rechargeable, high-density electrochemical device
GB201009519D0 (en) 2010-06-07 2010-07-21 Nexeon Ltd An additive for lithium ion rechargeable battery cells
GB201014707D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Electroactive material
GB201014706D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Porous electroactive material
KR101355007B1 (en) 2012-03-21 2014-01-24 지에스칼텍스 주식회사 Flexible thin film battery through thermal annealing at high temperature and method of manufacturing the same
KR101984736B1 (en) * 2012-10-09 2019-06-03 삼성디스플레이 주식회사 Array substrate for flexible display device
TWM449362U (en) * 2012-10-31 2013-03-21 Hon Hai Prec Ind Co Ltd Wireless charging film-battery with antenna
EP3092669A4 (en) * 2014-01-08 2017-06-21 MiniPumps, LLC Stacked battery tray structure and related methods
DE102015111498A1 (en) * 2015-07-15 2017-01-19 Infineon Technologies Ag Method of manufacturing a battery, battery and integrated circuit
US9966587B2 (en) 2015-08-21 2018-05-08 Apple Inc. Battery for routing signals
CN106887562B (en) * 2015-12-15 2020-12-04 小米科技有限责任公司 Protection mainboard of battery cell, electronic terminal and assembly method of battery cell for electronic terminal
US10186735B2 (en) 2015-12-21 2019-01-22 Intel Corporation Void filling battery
EP3740995A4 (en) 2018-01-16 2021-10-20 Printed Energy Pty Ltd Thin film-based energy storage devices
US11764392B2 (en) 2018-03-01 2023-09-19 Analog Devices, Inc. Battery assembly and method of manufacturing the same
WO2020150291A1 (en) * 2019-01-14 2020-07-23 Ocella Inc Electronic wearable patch for medical uses
US11705387B2 (en) * 2020-09-02 2023-07-18 Infineon Technologies Ag Multi-layer interconnection ribbon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098281A1 (en) * 2005-10-11 2009-04-16 Ji-Guang Zhang Method of manufacturing lithium battery

Family Cites Families (756)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US712316A (en) 1899-10-26 1902-10-28 Francois Loppe Electric accumulator.
US1712316A (en) 1925-12-16 1929-05-07 Henry L F Trebert Hydraulic brake
US2970180A (en) * 1959-06-17 1961-01-31 Union Carbide Corp Alkaline deferred action cell
US3309302A (en) 1963-10-07 1967-03-14 Varian Associates Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof
US3616403A (en) 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
US3790432A (en) * 1971-12-30 1974-02-05 Nasa Reinforced polyquinoxaline gasket and method of preparing the same
US3797091A (en) * 1972-05-15 1974-03-19 Du Pont Terminal applicator
US3850604A (en) 1972-12-11 1974-11-26 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
US4111523A (en) 1973-07-23 1978-09-05 Bell Telephone Laboratories, Incorporated Thin film optical waveguide
US3939008A (en) 1975-02-10 1976-02-17 Exxon Research And Engineering Company Use of perovskites and perovskite-related compounds as battery cathodes
US4127424A (en) 1976-12-06 1978-11-28 Ses, Incorporated Photovoltaic cell array
US4082569A (en) 1977-02-22 1978-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell collector
JPS559305A (en) 1978-07-04 1980-01-23 Asahi Chem Ind Co Ltd Thin metal-layer-halogen-type cell
DE2849294C3 (en) 1977-11-22 1982-03-04 Asahi Kasei Kogyo K.K., Osaka Thin metal halide cell and process for its manufacture
IE49121B1 (en) 1978-12-11 1985-08-07 Triplex Safety Glass Co Producing glass sheets of required curved shape
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
JPS5676060A (en) 1979-11-27 1981-06-23 Mitsubishi Electric Corp Electric field strength detector
JPS56156675A (en) 1980-04-12 1981-12-03 Toshiba Corp Solid battery
US4395713A (en) 1980-05-06 1983-07-26 Antenna, Incorporated Transit antenna
US4442144A (en) * 1980-11-17 1984-04-10 International Business Machines Corporation Method for forming a coating on a substrate
US4467236A (en) 1981-01-05 1984-08-21 Piezo Electric Products, Inc. Piezoelectric acousto-electric generator
US4328297A (en) 1981-03-27 1982-05-04 Yardngy Electric Corporation Electrode
US5055704A (en) 1984-07-23 1991-10-08 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with battery housing
US4756717A (en) 1981-08-24 1988-07-12 Polaroid Corporation Laminar batteries and methods of making the same
US4664993A (en) 1981-08-24 1987-05-12 Polaroid Corporation Laminar batteries and methods of making the same
JPS58216476A (en) 1982-06-11 1983-12-16 Hitachi Ltd Photoelectric-generating storage device
JPS5950027A (en) 1982-09-13 1984-03-22 Hitachi Ltd Thin titanium disulfide film and its formation
US4518661A (en) 1982-09-28 1985-05-21 Rippere Ralph E Consolidation of wires by chemical deposition and products resulting therefrom
US4437966A (en) 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
JPS59217964A (en) 1983-05-26 1984-12-08 Hitachi Ltd Positive electrode of thin film battery
JPS59227090A (en) 1983-06-06 1984-12-20 Hitachi Ltd Nonvolatile memory device
DE3345659A1 (en) 1983-06-16 1984-12-20 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen ZIRCONIUM DIOXIDE CERAMIC BODY (ZRO (DOWN ARROW) 2 (DOWN ARROW)) AND METHOD FOR PRODUCING THE SAME
JPS6058558A (en) 1983-09-12 1985-04-04 Fuji Electric Co Ltd Voltage rectifying apparatus
AU573631B2 (en) 1983-10-17 1988-06-16 Tosoh Corporation High strength zirconia type sintered body
DE3417732A1 (en) 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln METHOD FOR APPLYING SILICON-CONTAINING LAYERS TO SUBSTRATES BY CATODIZING AND SPRAYING CATODE FOR CARRYING OUT THE METHOD
GB8414878D0 (en) 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
JPH06101335B2 (en) * 1984-11-26 1994-12-12 株式会社日立製作所 All-solid-state lithium battery
US4785459A (en) 1985-05-01 1988-11-15 Baer Thomas M High efficiency mode matched solid state laser with transverse pumping
JPS61269072A (en) 1985-05-23 1986-11-28 Nippon Denki Sanei Kk Piezoelectric acceleration sensor
US4710940A (en) 1985-10-01 1987-12-01 California Institute Of Technology Method and apparatus for efficient operation of optically pumped laser
US5296089A (en) 1985-12-04 1994-03-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US5173271A (en) 1985-12-04 1992-12-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US4964877A (en) 1986-01-14 1990-10-23 Wilson Greatbatch Ltd. Non-aqueous lithium battery
JPS62267944A (en) 1986-05-16 1987-11-20 Hitachi Ltd Magnetic recording medium
US4668593A (en) 1986-08-29 1987-05-26 Eltron Research, Inc. Solvated electron lithium electrode for high energy density battery
US4977007A (en) 1986-09-19 1990-12-11 Matsushita Electrical Indust. Co. Solid electrochemical element and production process therefor
US4740431A (en) * 1986-12-22 1988-04-26 Spice Corporation Integrated solar cell and battery
JPS63290922A (en) 1987-05-22 1988-11-28 Matsushita Electric Works Ltd Body weight meter
US4728588A (en) * 1987-06-01 1988-03-01 The Dow Chemical Company Secondary battery
US4865428A (en) 1987-08-21 1989-09-12 Corrigan Dennis A Electrooptical device
JP2692816B2 (en) 1987-11-13 1997-12-17 株式会社きもと Thin primary battery
US4826743A (en) 1987-12-16 1989-05-02 General Motors Corporation Solid-state lithium battery
US4878094A (en) 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
US4915810A (en) 1988-04-25 1990-04-10 Unisys Corporation Target source for ion beam sputter deposition
US4903326A (en) * 1988-04-27 1990-02-20 Motorola, Inc. Detachable battery pack with a built-in broadband antenna
US5096852A (en) * 1988-06-02 1992-03-17 Burr-Brown Corporation Method of making plastic encapsulated multichip hybrid integrated circuits
DE3821207A1 (en) 1988-06-23 1989-12-28 Leybold Ag ARRANGEMENT FOR COATING A SUBSTRATE WITH DIELECTRICS
US5403680A (en) 1988-08-30 1995-04-04 Osaka Gas Company, Ltd. Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers
FR2638764B1 (en) 1988-11-04 1993-05-07 Centre Nat Rech Scient COMPOSITE ELEMENT COMPRISING A TITANIUM CHALCOGENIDE OR OXYCHALCOGENIDE LAYER, IN PARTICULAR AS A POSITIVE ELECTRODE IN A THIN-LAYER ELECTROCHEMICAL CELL
JPH02133599A (en) 1988-11-11 1990-05-22 Agency Of Ind Science & Technol Production of iridium oxide film
JPH02230662A (en) 1989-03-03 1990-09-13 Tonen Corp Lithium battery
US5006737A (en) 1989-04-24 1991-04-09 Motorola Inc. Transformerless semiconductor AC switch having internal biasing means
US5100821A (en) 1989-04-24 1992-03-31 Motorola, Inc. Semiconductor AC switch
US5540742A (en) 1989-05-01 1996-07-30 Brother Kogyo Kabushiki Kaisha Method of fabricating thin film cells and printed circuit boards containing thin film cells using a screen printing process
JP2808660B2 (en) 1989-05-01 1998-10-08 ブラザー工業株式会社 Method of manufacturing printed circuit board with built-in thin film battery
US5217828A (en) 1989-05-01 1993-06-08 Brother Kogyo Kabushiki Kaisha Flexible thin film cell including packaging material
JP2690363B2 (en) 1989-06-30 1997-12-10 株式会社テック DC power supply device and discharge lamp lighting device using the DC power supply device
US5221891A (en) 1989-07-31 1993-06-22 Intermatic Incorporated Control circuit for a solar-powered rechargeable power source and load
US5119269A (en) 1989-08-23 1992-06-02 Seiko Epson Corporation Semiconductor with a battery unit
US5223457A (en) * 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US5792550A (en) 1989-10-24 1998-08-11 Flex Products, Inc. Barrier film having high colorless transparency and method
JP2758948B2 (en) 1989-12-15 1998-05-28 キヤノン株式会社 Thin film formation method
DE4022090A1 (en) 1989-12-18 1991-06-20 Forschungszentrum Juelich Gmbh ELECTRO-OPTICAL COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US5252194A (en) 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5196374A (en) * 1990-01-26 1993-03-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5124782A (en) 1990-01-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5085904A (en) 1990-04-20 1992-02-04 E. I. Du Pont De Nemours And Company Barrier materials useful for packaging
US5306569A (en) 1990-06-15 1994-04-26 Hitachi Metals, Ltd. Titanium-tungsten target material and manufacturing method thereof
JP2642223B2 (en) 1990-06-25 1997-08-20 シャープ株式会社 Battery electrode and method of manufacturing the same
JP2755471B2 (en) 1990-06-29 1998-05-20 日立電線株式会社 Rare earth element doped optical waveguide and method of manufacturing the same
JP2984035B2 (en) 1990-07-11 1999-11-29 株式会社フジクラ Temperature control method of sprayed thin film formation surface
US5225288A (en) 1990-08-10 1993-07-06 E. I. Du Pont De Nemours And Company Solvent blockers and multilayer barrier coatings for thin films
US5645626A (en) 1990-08-10 1997-07-08 Bend Research, Inc. Composite hydrogen separation element and module
US5147985A (en) 1990-08-14 1992-09-15 The Scabbard Corporation Sheet batteries as substrate for electronic circuit
US5110694A (en) 1990-10-11 1992-05-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Secondary Li battery incorporating 12-Crown-4 ether
US5110696A (en) 1990-11-09 1992-05-05 Bell Communications Research Rechargeable lithiated thin film intercalation electrode battery
US5273608A (en) 1990-11-29 1993-12-28 United Solar Systems Corporation Method of encapsulating a photovoltaic device
US5493177A (en) * 1990-12-03 1996-02-20 The Regents Of The University Of California Sealed micromachined vacuum and gas filled devices
US5057385A (en) 1990-12-14 1991-10-15 Hope Henry F Battery packaging construction
NL9002844A (en) 1990-12-21 1992-07-16 Philips Nv SYSTEM INCLUDING A DEVICE AND A CASSETTE, AND A DEVICE AND A CASSETTE SUITABLE FOR USE IN SUCH A SYSTEM.
CA2056139C (en) 1991-01-31 2000-08-01 John C. Bailey Electrochromic thin film state-of-charge detector for on-the-cell application
US5227264A (en) 1991-02-14 1993-07-13 Hydro-Quebec Device for packaging a lithium battery
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5180645A (en) * 1991-03-01 1993-01-19 Motorola, Inc. Integral solid state embedded power supply
US5200029A (en) 1991-04-25 1993-04-06 At&T Bell Laboratories Method of making a planar optical amplifier
US5119460A (en) 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5107538A (en) 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5208121A (en) 1991-06-18 1993-05-04 Wisconsin Alumni Research Foundation Battery utilizing ceramic membranes
US5187564A (en) 1991-07-26 1993-02-16 Sgs-Thomson Microelectronics, Inc. Application of laminated interconnect media between a laminated power source and semiconductor devices
US5153710A (en) 1991-07-26 1992-10-06 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with laminated backup cell
US5171413A (en) 1991-09-16 1992-12-15 Tufts University Methods for manufacturing solid state ionic devices
US5196041A (en) 1991-09-17 1993-03-23 The Charles Stark Draper Laboratory, Inc. Method of forming an optical channel waveguide by gettering
US5355089A (en) 1992-07-22 1994-10-11 Duracell Inc. Moisture barrier for battery with electrochemical tester
JP2755844B2 (en) 1991-09-30 1998-05-25 シャープ株式会社 Plastic substrate liquid crystal display
US5702829A (en) 1991-10-14 1997-12-30 Commissariat A L'energie Atomique Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material
US5401595A (en) * 1991-12-06 1995-03-28 Yuasa Corporation Film type battery and layer-built film type battery
EP0546709B1 (en) 1991-12-11 1997-06-04 Mobil Oil Corporation High barrier film
US5287427A (en) 1992-05-05 1994-02-15 At&T Bell Laboratories Method of making an article comprising an optical component, and article comprising the component
US5497140A (en) * 1992-08-12 1996-03-05 Micron Technology, Inc. Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US6144916A (en) 1992-05-15 2000-11-07 Micron Communications, Inc. Itinerary monitoring system for storing a plurality of itinerary data points
SE9201585L (en) 1992-05-19 1993-11-01 Gustavsson Magnus Peter M Electrically heated garments or similar
US5779839A (en) 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5326652A (en) 1993-01-25 1994-07-05 Micron Semiconductor, Inc. Battery package and method using flexible polymer films having a deposited layer of an inorganic material
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US6741178B1 (en) 1992-06-17 2004-05-25 Micron Technology, Inc Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US6045652A (en) 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
DE4345610B4 (en) 1992-06-17 2013-01-03 Micron Technology Inc. Method for producing a radio-frequency identification device (HFID)
JP3558655B2 (en) 1992-06-28 2004-08-25 株式会社アルバック Magnetron sputtering equipment
US5338625A (en) 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
US7158031B2 (en) 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
JP3214910B2 (en) 1992-08-18 2001-10-02 富士通株式会社 Manufacturing method of planar waveguide optical amplifier
JPH06100333A (en) 1992-09-16 1994-04-12 Kobe Steel Ltd Surface-modified glass containing metallic ion implanted thereinto
US5538796A (en) 1992-10-13 1996-07-23 General Electric Company Thermal barrier coating system having no bond coat
US5597661A (en) 1992-10-23 1997-01-28 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
JP3231900B2 (en) 1992-10-28 2001-11-26 株式会社アルバック Film forming equipment
US5326653A (en) 1992-10-29 1994-07-05 Valence Technology, Inc. Battery unit with reinforced current collector tabs and method of making a battery unit having strengthened current collector tabs
JP3214107B2 (en) * 1992-11-09 2001-10-02 富士電機株式会社 Battery mounted integrated circuit device
US5942089A (en) 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
JPH06158308A (en) 1992-11-24 1994-06-07 Hitachi Metals Ltd Target for sputtering for indium-tin oxide film and its production
US5279624A (en) 1992-11-27 1994-01-18 Gould Inc. Solder sealed solid electrolyte cell housed within a ceramic frame and the method for producing it
US5307240A (en) * 1992-12-02 1994-04-26 Intel Corporation Chiplid, multichip semiconductor package design concept
US6022458A (en) 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
AU669754B2 (en) 1992-12-18 1996-06-20 Becton Dickinson & Company Barrier coating
US5303319A (en) 1992-12-28 1994-04-12 Honeywell Inc. Ion-beam deposited multilayer waveguides and resonators
SE500725C2 (en) 1992-12-29 1994-08-15 Volvo Ab Device at panels for vehicles
US5427669A (en) 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5547780A (en) 1993-01-18 1996-08-20 Yuasa Corporation Battery precursor and a battery
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5338624A (en) * 1993-02-08 1994-08-16 Globe-Union Inc. Thermal management of rechargeable batteries
JPH06279185A (en) 1993-03-25 1994-10-04 Canon Inc Forming method of diamond crystal and diamond crystal film
US5262254A (en) 1993-03-30 1993-11-16 Valence Technology, Inc. Positive electrode for rechargeable lithium batteries
US5302474A (en) 1993-04-02 1994-04-12 Valence Technology, Inc. Fullerene-containing cathodes for solid electrochemical cells
US5613995A (en) 1993-04-23 1997-03-25 Lucent Technologies Inc. Method for making planar optical waveguides
US5665490A (en) 1993-06-03 1997-09-09 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
US5464692A (en) 1993-06-17 1995-11-07 Quality Manufacturing Incorporated Flexible masking tape
SG74667A1 (en) 1993-07-28 2000-08-22 Asahi Glass Co Ltd Method of an apparatus for sputtering
US5499207A (en) 1993-08-06 1996-03-12 Hitachi, Ltd. Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
US5599355A (en) * 1993-08-20 1997-02-04 Nagasubramanian; Ganesan Method for forming thin composite solid electrolyte film for lithium batteries
US5360686A (en) 1993-08-20 1994-11-01 The United States Of America As Represented By The National Aeronautics And Space Administration Thin composite solid electrolyte film for lithium batteries
JP2642849B2 (en) 1993-08-24 1997-08-20 株式会社フロンテック Thin film manufacturing method and manufacturing apparatus
JPH07107752A (en) 1993-09-30 1995-04-21 Mitsuteru Kimura Piezoelectric generating device
US5478456A (en) 1993-10-01 1995-12-26 Minnesota Mining And Manufacturing Company Sputtering target
EP0652308B1 (en) 1993-10-14 2002-03-27 Neuralsystems Corporation Method of and apparatus for forming single-crystalline thin film
US5314765A (en) 1993-10-14 1994-05-24 Martin Marietta Energy Systems, Inc. Protective lithium ion conducting ceramic coating for lithium metal anodes and associate method
US5411537A (en) 1993-10-29 1995-05-02 Intermedics, Inc. Rechargeable biomedical battery powered devices with recharging and control system therefor
US5445856A (en) 1993-11-10 1995-08-29 Chaloner-Gill; Benjamin Protective multilayer laminate for covering an electrochemical device
US5512387A (en) * 1993-11-19 1996-04-30 Ovonic Battery Company, Inc. Thin-film, solid state battery employing an electrically insulating, ion conducting electrolyte material
US5985485A (en) 1993-11-19 1999-11-16 Ovshinsky; Stanford R. Solid state battery having a disordered hydrogenated carbon negative electrode
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
WO1996023085A1 (en) 1995-01-25 1996-08-01 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5387482A (en) * 1993-11-26 1995-02-07 Motorola, Inc. Multilayered electrolyte and electrochemical cells used same
US5654984A (en) 1993-12-03 1997-08-05 Silicon Systems, Inc. Signal modulation across capacitors
US6242128B1 (en) 1993-12-06 2001-06-05 Valence Technology, Inc. Fastener system of tab bussing for batteries
US5419982A (en) 1993-12-06 1995-05-30 Valence Technology, Inc. Corner tab termination for flat-cell batteries
US5569520A (en) 1994-01-12 1996-10-29 Martin Marietta Energy Systems, Inc. Rechargeable lithium battery for use in applications requiring a low to high power output
JPH07224379A (en) 1994-02-14 1995-08-22 Ulvac Japan Ltd Sputtering method and device therefor
US5961672A (en) 1994-02-16 1999-10-05 Moltech Corporation Stabilized anode for lithium-polymer batteries
JP3836163B2 (en) 1994-02-22 2006-10-18 旭硝子セラミックス株式会社 Method for forming high refractive index film
US5561004A (en) 1994-02-25 1996-10-01 Bates; John B. Packaging material for thin film lithium batteries
US5547781A (en) 1994-03-02 1996-08-20 Micron Communications, Inc. Button-type battery with improved separator and gasket construction
US5464706A (en) 1994-03-02 1995-11-07 Dasgupta; Sankar Current collector for lithium ion battery
US6408402B1 (en) 1994-03-22 2002-06-18 Hyperchip Inc. Efficient direct replacement cell fault tolerant architecture
US5475528A (en) 1994-03-25 1995-12-12 Corning Incorporated Optical signal amplifier glasses
US5470396A (en) 1994-04-12 1995-11-28 Amoco Corporation Solar cell module package and method for its preparation
US5805223A (en) 1994-05-25 1998-09-08 Canon Kk Image encoding apparatus having an intrapicture encoding mode and interpicture encoding mode
US5411592A (en) 1994-06-06 1995-05-02 Ovonic Battery Company, Inc. Apparatus for deposition of thin-film, solid state batteries
US5755940A (en) 1994-06-13 1998-05-26 Mitsui Petrochemical Industries, Ltd. Lithium ionic conducting glass thin film and carbon dioxide sensor comprising the glass thin film
US5472795A (en) 1994-06-27 1995-12-05 Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee Multilayer nanolaminates containing polycrystalline zirconia
US5457569A (en) 1994-06-30 1995-10-10 At&T Ipm Corp. Semiconductor amplifier or laser having integrated lens
WO1996000996A1 (en) 1994-06-30 1996-01-11 The Whitaker Corporation Planar hybrid optical amplifier
JP3407409B2 (en) 1994-07-27 2003-05-19 富士通株式会社 Manufacturing method of high dielectric constant thin film
US6181283B1 (en) * 1994-08-01 2001-01-30 Rangestar Wireless, Inc. Selectively removable combination battery and antenna assembly for a telecommunication device
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5445906A (en) 1994-08-03 1995-08-29 Martin Marietta Energy Systems, Inc. Method and system for constructing a rechargeable battery and battery structures formed with the method
US5458995A (en) 1994-08-12 1995-10-17 The United States Of America As Represented By The Secretary Of The Army Solid state electrochemical cell including lithium iodide as an electrolyte additive
US5483613A (en) 1994-08-16 1996-01-09 At&T Corp. Optical device with substrate and waveguide structure having thermal matching interfaces
US5909346A (en) 1994-08-26 1999-06-01 Aiwa Research & Development, Inc. Thin magnetic film including multiple geometry gap structures on a common substrate
JP3042333B2 (en) 1994-10-18 2000-05-15 オムロン株式会社 Electric signal displacement conversion device, equipment using the conversion device, and method of driving a fluid transfer device using the conversion device
US5498489A (en) * 1995-04-14 1996-03-12 Dasgupta; Sankar Rechargeable non-aqueous lithium battery having stacked electrochemical cells
US5437692A (en) 1994-11-02 1995-08-01 Dasgupta; Sankar Method for forming an electrode-electrolyte assembly
JPH08148709A (en) 1994-11-15 1996-06-07 Mitsubishi Electric Corp Method and device for manufacturing thin solar cell
US7162392B2 (en) * 1994-11-21 2007-01-09 Phatrat Technology, Inc. Sport performance systems for measuring athletic performance, and associated methods
US6025094A (en) * 1994-11-23 2000-02-15 Polyplus Battery Company, Inc. Protective coatings for negative electrodes
CN1075243C (en) 1994-12-28 2001-11-21 松下电器产业株式会社 Capacity element of integrated circuit and manufacturing method thereof
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
US5555342A (en) 1995-01-17 1996-09-10 Lucent Technologies Inc. Planar waveguide and a process for its fabrication
US5607789A (en) 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
US5755831A (en) 1995-02-22 1998-05-26 Micron Communications, Inc. Method of forming a button-type battery and a button-type battery with improved separator construction
US6444750B1 (en) 1995-03-06 2002-09-03 Exxonmobil Oil Corp. PVOH-based coating solutions
US5612153A (en) * 1995-04-13 1997-03-18 Valence Technology, Inc. Battery mask from radiation curable and thermoplastic materials
ES2202439T3 (en) 1995-04-25 2004-04-01 Von Ardenne Anlagentechnik Gmbh SPRAY SYSTEM THAT USES A ROTARY CYLINDER MAGNETRON ELECTRICALLY POWERED USING ALTERNATE CURRENT.
US5771562A (en) 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
JP3827725B2 (en) 1995-05-18 2006-09-27 旭硝子セラミックス株式会社 Method for producing sputtering target
US5645960A (en) 1995-05-19 1997-07-08 The United States Of America As Represented By The Secretary Of The Air Force Thin film lithium polymer battery
US5601952A (en) * 1995-05-24 1997-02-11 Dasgupta; Sankar Lithium-Manganese oxide electrode for a rechargeable lithium battery
US5622652A (en) 1995-06-07 1997-04-22 Img Group Limited Electrically-conductive liquid for directly printing an electrical circuit component onto a substrate, and a method for making such a liquid
US5625202A (en) 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US6265652B1 (en) 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
KR100342189B1 (en) 1995-07-12 2002-11-30 삼성전자 주식회사 Method for producing rare earth elements-added optical fiber by using volatile composite
US6639578B1 (en) 1995-07-20 2003-10-28 E Ink Corporation Flexible displays
US6459418B1 (en) 1995-07-20 2002-10-01 E Ink Corporation Displays combining active and non-active inks
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US5677784A (en) 1995-07-24 1997-10-14 Ellis D. Harris Sr. Family Trust Array of pellicle optical gates
ATE204029T1 (en) 1995-08-18 2001-08-15 Heraeus Gmbh W C TARGET FOR CATHODE SPUTTING AND METHOD FOR PRODUCING SUCH A TARGET
US5563979A (en) 1995-08-31 1996-10-08 Lucent Technologies Inc. Erbium-doped planar optical device
US5582935A (en) 1995-09-28 1996-12-10 Dasgupta; Sankar Composite electrode for a lithium battery
US5689522A (en) 1995-10-02 1997-11-18 The Regents Of The University Of California High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture
US5716736A (en) 1995-10-06 1998-02-10 Midwest Research Institute Solid lithium-ion electrolyte
US5616933A (en) 1995-10-16 1997-04-01 Sony Corporation Nitride encapsulated thin film transistor fabrication technique
US5719976A (en) 1995-10-24 1998-02-17 Lucent Technologies, Inc. Optimized waveguide structure
JP3298799B2 (en) 1995-11-22 2002-07-08 ルーセント テクノロジーズ インコーポレイテッド Cladding pump fiber and its manufacturing method
US5811177A (en) 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
US5686360A (en) 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US6608464B1 (en) 1995-12-11 2003-08-19 The Johns Hopkins University Integrated power source layered with thin film rechargeable batteries, charger, and charge-control
US5644207A (en) 1995-12-11 1997-07-01 The Johns Hopkins University Integrated power source
US5897522A (en) 1995-12-20 1999-04-27 Power Paper Ltd. Flexible thin layer open electrochemical cell and applications of same
GB9601236D0 (en) 1996-01-22 1996-03-20 Atraverda Ltd Conductive coating
US5955161A (en) 1996-01-30 1999-09-21 Becton Dickinson And Company Blood collection tube assembly
US5637418A (en) 1996-02-08 1997-06-10 Motorola, Inc. Package for a flat electrochemical device
US5721067A (en) * 1996-02-22 1998-02-24 Jacobs; James K. Rechargeable lithium battery having improved reversible capacity
US5845990A (en) 1996-03-11 1998-12-08 Hilite Systems, L.L.C. High signal lights for automotive vehicles
DE19609647A1 (en) * 1996-03-12 1997-09-18 Univ Sheffield Hard coating
AU1978497A (en) 1996-03-22 1997-10-10 Materials Research Corporation Method and apparatus for rf diode sputtering
JPH09259932A (en) 1996-03-26 1997-10-03 Toshiba Battery Co Ltd Secondary battery with charging circuit
US5930584A (en) 1996-04-10 1999-07-27 United Microelectronics Corp. Process for fabricating low leakage current electrode for LPCVD titanium oxide films
JPH1010675A (en) 1996-04-22 1998-01-16 Fuji Photo Film Co Ltd Recording material
JP3346167B2 (en) 1996-05-27 2002-11-18 三菱マテリアル株式会社 High-strength dielectric sputtering target, method for producing the same, and film
JP3862760B2 (en) 1996-06-12 2006-12-27 トレスパファン、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング Transparent barrier coating showing low film interference
US5948464A (en) 1996-06-19 1999-09-07 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
EP0814529A1 (en) 1996-06-19 1997-12-29 Koninklijke Philips Electronics N.V. Thin card containing flat accumulator and connecting devices
US5731661A (en) 1996-07-15 1998-03-24 Motorola, Inc. Passivation of electroluminescent organic devices
US5855744A (en) 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
JP3825843B2 (en) 1996-09-12 2006-09-27 キヤノン株式会社 Solar cell module
KR20000049093A (en) 1996-10-11 2000-07-25 자르밀라 제트. 흐르벡 Polymer electrolyte, intercalation compounds and electrodes for batteries
US6007945A (en) 1996-10-15 1999-12-28 Electrofuel Inc. Negative electrode for a rechargeable lithium battery comprising a solid solution of titanium dioxide and tin dioxide
JP3631341B2 (en) 1996-10-18 2005-03-23 Tdk株式会社 Multilayer composite functional element and method for manufacturing the same
US5716728A (en) * 1996-11-04 1998-02-10 Wilson Greatbatch Ltd. Alkali metal electrochemical cell with improved energy density
US5841931A (en) 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US5783333A (en) 1996-11-27 1998-07-21 Polystor Corporation Lithium nickel cobalt oxides for positive electrodes
EP0883137B1 (en) 1996-12-11 2006-03-22 Tonen Chemical Corporation Thin aprotic electrolyte film, immobilized liquid film conductor, and polymer cell
US6144795A (en) 1996-12-13 2000-11-07 Corning Incorporated Hybrid organic-inorganic planar optical waveguide device
US5842118A (en) 1996-12-18 1998-11-24 Micron Communications, Inc. Communication system including diversity antenna queuing
US6289209B1 (en) 1996-12-18 2001-09-11 Micron Technology, Inc. Wireless communication system, radio frequency communications system, wireless communications method, radio frequency communications method
JPH10195649A (en) 1996-12-27 1998-07-28 Sony Corp Magnetron sputter device and manufacture of semiconductor device
US5705293A (en) * 1997-01-09 1998-01-06 Lockheed Martin Energy Research Corporation Solid state thin film battery having a high temperature lithium alloy anode
US5882812A (en) 1997-01-14 1999-03-16 Polyplus Battery Company, Inc. Overcharge protection systems for rechargeable batteries
US5790489A (en) 1997-01-21 1998-08-04 Dell Usa, L.P. Smart compact disk including a processor and a transmission element
JP4104187B2 (en) 1997-02-06 2008-06-18 株式会社クレハ Carbonaceous material for secondary battery electrode
US5944964A (en) 1997-02-13 1999-08-31 Optical Coating Laboratory, Inc. Methods and apparatus for preparing low net stress multilayer thin film coatings
JPH10229201A (en) 1997-02-14 1998-08-25 Sony Corp Manufacture of thin-film semiconductor device
JP3345878B2 (en) 1997-02-17 2002-11-18 株式会社デンソー Manufacturing method of electronic circuit device
US5847865A (en) 1997-02-18 1998-12-08 Regents Of The University Of Minnesota Waveguide optical amplifier
US5970393A (en) 1997-02-25 1999-10-19 Polytechnic University Integrated micro-strip antenna apparatus and a system utilizing the same for wireless communications for sensing and actuation purposes
JP3767151B2 (en) 1997-02-26 2006-04-19 ソニー株式会社 Thin battery
JPH10302843A (en) 1997-02-28 1998-11-13 Mitsubishi Electric Corp Adhesive for battery, battery using it, and its manufacture
JP3228168B2 (en) 1997-02-28 2001-11-12 株式会社豊田中央研究所 Rotation speed detection device and tire generation force detection device
JP3098204B2 (en) 1997-03-07 2000-10-16 ティーディーケイ株式会社 Alloy target for magneto-optical recording, its manufacturing method and its reproducing method
JP2975907B2 (en) 1997-03-10 1999-11-10 株式会社ワコー Force / acceleration / magnetism detection device
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JPH10265948A (en) 1997-03-25 1998-10-06 Rohm Co Ltd Substrate for semiconductor device and manufacture of the same
ATE199196T1 (en) 1997-03-27 2001-02-15 Tno ERBUM-DOPED PLANAR WAVEGUIDE
US6106933A (en) 1997-04-03 2000-08-22 Toray Industries, Inc. Transparent gas barrier biaxially oriented polypropylene film, a laminate film, and a production method thereof
US6242132B1 (en) 1997-04-16 2001-06-05 Ut-Battelle, Llc Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery
US5948215A (en) 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
JPH1197065A (en) * 1997-04-23 1999-04-09 Hydro Quebec Ultra thin layer solid lithium battery and manufacture of the same
US6422698B2 (en) 1997-04-28 2002-07-23 Binney & Smith Inc. Ink jet marker
US6394598B1 (en) 1997-04-28 2002-05-28 Binney & Smith Inc. Ink jet marker
US5882721A (en) 1997-05-01 1999-03-16 Imra America Inc Process of manufacturing porous separator for electrochemical power supply
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
JP3290375B2 (en) 1997-05-12 2002-06-10 松下電器産業株式会社 Organic electroluminescent device
JP3045998B2 (en) 1997-05-15 2000-05-29 エフエムシー・コーポレイション Interlayer compound and method for producing the same
US5895731A (en) 1997-05-15 1999-04-20 Nelson E. Smith Thin-film lithium battery and process
US5830330A (en) 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US5977582A (en) 1997-05-23 1999-11-02 Lucent Technologies Inc. Capacitor comprising improved TaOx -based dielectric
US6000603A (en) 1997-05-23 1999-12-14 3M Innovative Properties Company Patterned array of metal balls and methods of making
US6316563B2 (en) 1997-05-27 2001-11-13 Showa Denko K.K. Thermopolymerizable composition and use thereof
US6077106A (en) 1997-06-05 2000-06-20 Micron Communications, Inc. Thin profile battery mounting contact for printed circuit boards
US20010055719A1 (en) 1997-06-20 2001-12-27 Hiroyuki Akashi Cell
US5865860A (en) * 1997-06-20 1999-02-02 Imra America, Inc. Process for filling electrochemical cells with electrolyte
US6051114A (en) 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US5831262A (en) 1997-06-27 1998-11-03 Lucent Technologies Inc. Article comprising an optical fiber attached to a micromechanical device
JP3813740B2 (en) 1997-07-11 2006-08-23 Tdk株式会社 Substrates for electronic devices
US5982144A (en) 1997-07-14 1999-11-09 Johnson Research & Development Company, Inc. Rechargeable battery power supply overcharge protection circuit
JP3335884B2 (en) 1997-07-16 2002-10-21 株式会社荏原製作所 Corrosion / corrosion analysis method
US6046514A (en) 1997-07-25 2000-04-04 3M Innovative Properties Company Bypass apparatus and method for series connected energy storage devices
US5973913A (en) 1997-08-12 1999-10-26 Covalent Associates, Inc. Nonaqueous electrical storage device
US6252564B1 (en) 1997-08-28 2001-06-26 E Ink Corporation Tiled displays
KR100250855B1 (en) 1997-08-28 2000-04-01 손욱 A hybrid polymeric electrolyte, a method of making the same and a lithium battery with the same
JPH11111273A (en) 1997-09-29 1999-04-23 Furukawa Battery Co Ltd:The Manufacture of plate for lithium secondary battery and lithium secondary battery
EP0964461B1 (en) 1997-10-07 2007-04-11 Matsushita Electric Industrial Co., Ltd. Non-aqueous electrolyte secondary cell
US5916704A (en) 1997-10-10 1999-06-29 Ultralife Batteries Low pressure battery vent
DE69840914D1 (en) 1997-10-14 2009-07-30 Patterning Technologies Ltd Method for producing an electrical capacitor
US6094292A (en) 1997-10-15 2000-07-25 Trustees Of Tufts College Electrochromic window with high reflectivity modulation
US6982132B1 (en) 1997-10-15 2006-01-03 Trustees Of Tufts College Rechargeable thin film battery and method for making the same
US5985484A (en) 1997-10-20 1999-11-16 Amtek Research International Llc Battery separation
US6084285A (en) 1997-10-20 2000-07-04 The Board Of Trustees Of The Leland Stanford Junior University Lateral flux capacitor having fractal-shaped perimeters
WO1999021128A1 (en) 1997-10-22 1999-04-29 Cambridge Consultants Limited Portable ic card
US5948562A (en) 1997-11-03 1999-09-07 Motorola, Inc. Energy storage device
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6052397A (en) 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6042965A (en) * 1997-12-12 2000-03-28 Johnson Research & Development Company, Inc. Unitary separator and electrode structure and method of manufacturing separator
US6120890A (en) 1997-12-12 2000-09-19 Seagate Technology, Inc. Magnetic thin film medium comprising amorphous sealing layer for reduced lithium migration
US6045942A (en) 1997-12-15 2000-04-04 Avery Dennison Corporation Low profile battery and method of making same
JPH11204088A (en) 1998-01-07 1999-07-30 Toshiba Battery Co Ltd Sheet battery
US6019284A (en) 1998-01-27 2000-02-01 Viztec Inc. Flexible chip card with display
US6137671A (en) 1998-01-29 2000-10-24 Energenius, Inc. Embedded energy storage device
US6608470B1 (en) 1998-01-31 2003-08-19 Motorola, Inc. Overcharge protection device and methods for lithium based rechargeable batteries
US6391166B1 (en) 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
US6402795B1 (en) 1998-02-18 2002-06-11 Polyplus Battery Company, Inc. Plating metal negative electrodes under protective coatings
US6753108B1 (en) 1998-02-24 2004-06-22 Superior Micropowders, Llc Energy devices and methods for the fabrication of energy devices
US6223317B1 (en) 1998-02-28 2001-04-24 Micron Technology, Inc. Bit synchronizers and methods of synchronizing and calculating error
JP4085459B2 (en) 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
US6080508A (en) 1998-03-06 2000-06-27 Electrofuel Inc. Packaging assembly for a lithium battery
US6610440B1 (en) 1998-03-10 2003-08-26 Bipolar Technologies, Inc Microscopic batteries for MEMS systems
US6004660A (en) 1998-03-12 1999-12-21 E.I. Du Pont De Nemours And Company Oxygen barrier composite film structure
US5889383A (en) * 1998-04-03 1999-03-30 Advanced Micro Devices, Inc. System and method for charging batteries with ambient acoustic energy
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6563998B1 (en) 1999-04-15 2003-05-13 John Farah Polished polymide substrate
US6753114B2 (en) 1998-04-20 2004-06-22 Electrovaya Inc. Composite electrolyte for a rechargeable lithium battery
US6175075B1 (en) * 1998-04-21 2001-01-16 Canon Kabushiki Kaisha Solar cell module excelling in reliability
US6169474B1 (en) 1998-04-23 2001-01-02 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6459726B1 (en) 1998-04-24 2002-10-01 Micron Technology, Inc. Backscatter interrogators, communication systems and backscatter communication methods
US6324211B1 (en) 1998-04-24 2001-11-27 Micron Technology, Inc. Interrogators communication systems communication methods and methods of processing a communication signal
US6905578B1 (en) 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
US6214061B1 (en) 1998-05-01 2001-04-10 Polyplus Battery Company, Inc. Method for forming encapsulated lithium electrodes having glass protective layers
US6420961B1 (en) 1998-05-14 2002-07-16 Micron Technology, Inc. Wireless communication systems, interfacing devices, communication methods, methods of interfacing with an interrogator, and methods of operating an interrogator
US6075973A (en) 1998-05-18 2000-06-13 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6115616A (en) 1998-05-28 2000-09-05 International Business Machines Corporation Hand held telephone set with separable keyboard
DE19824145A1 (en) 1998-05-29 1999-12-16 Siemens Ag Integrated antenna arrangement for mobile telecommunications terminal
JP3126698B2 (en) 1998-06-02 2001-01-22 富士通株式会社 Sputter film forming method, sputter film forming apparatus, and semiconductor device manufacturing method
US6093944A (en) 1998-06-04 2000-07-25 Lucent Technologies Inc. Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
US7854684B1 (en) 1998-06-24 2010-12-21 Samsung Electronics Co., Ltd. Wearable device
KR100287176B1 (en) 1998-06-25 2001-04-16 윤종용 Method for forming a capacitor using high temperature oxidation
US6058233A (en) 1998-06-30 2000-05-02 Lucent Technologies Inc. Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics
GB9814123D0 (en) 1998-07-01 1998-08-26 British Gas Plc Electrochemical fuel cell
EP0969521A1 (en) 1998-07-03 2000-01-05 ISOVOLTAÖsterreichische IsolierstoffwerkeAktiengesellschaft Photovoltaic module and method of fabrication
DE19831719A1 (en) 1998-07-15 2000-01-20 Alcatel Sa Process for the production of planar waveguide structures and waveguide structure
US6358810B1 (en) 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
US6146225A (en) 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
US6129277A (en) 1998-08-03 2000-10-10 Privicon, Inc. Card reader for transmission of data by sound
US6579728B2 (en) 1998-08-03 2003-06-17 Privicom, Inc. Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
US6160373A (en) 1998-08-10 2000-12-12 Dunn; James P. Battery operated cableless external starting device and methods
JP2000067852A (en) 1998-08-21 2000-03-03 Pioneer Electronic Corp Lithium secondary battery
KR100305903B1 (en) 1998-08-21 2001-12-17 박호군 Electrical and electronic devices with thin-film batteries connected vertically and integrated and methods for fabricating the same
US6480699B1 (en) 1998-08-28 2002-11-12 Woodtoga Holdings Company Stand-alone device for transmitting a wireless signal containing data from a memory or a sensor
JP3386756B2 (en) 1998-08-31 2003-03-17 松下電池工業株式会社 Thin film forming method and thin film forming apparatus
US6210832B1 (en) 1998-09-01 2001-04-03 Polyplus Battery Company, Inc. Mixed ionic electronic conductor coatings for redox electrodes
US6192222B1 (en) 1998-09-03 2001-02-20 Micron Technology, Inc. Backscatter communication systems, interrogators, methods of communicating in a backscatter system, and backscatter communication methods
JP4014737B2 (en) 1998-09-17 2007-11-28 昭和電工株式会社 Thermally polymerizable composition and use thereof
US6236793B1 (en) 1998-09-23 2001-05-22 Molecular Optoelectronics Corporation Optical channel waveguide amplifier
US6362916B2 (en) 1998-09-25 2002-03-26 Fiver Laboratories All fiber gain flattening optical filter
US6159635A (en) 1998-09-29 2000-12-12 Electrofuel Inc. Composite electrode including current collector
KR100283954B1 (en) 1998-10-13 2001-03-02 윤종용 Optical fiber for optical amplifier
US7323634B2 (en) 1998-10-14 2008-01-29 Patterning Technologies Limited Method of forming an electronic device
KR100282487B1 (en) 1998-10-19 2001-02-15 윤종용 Cell Capacitor Using High-Dielectric Multilayer Film and Its Manufacturing Method
US6605228B1 (en) 1998-10-19 2003-08-12 Nhk Spring Co., Ltd. Method for fabricating planar optical waveguide devices
JP4126711B2 (en) 1998-10-23 2008-07-30 ソニー株式会社 Non-aqueous electrolyte battery
JP3830008B2 (en) 1998-10-30 2006-10-04 ソニー株式会社 Non-aqueous electrolyte battery
US6157765A (en) 1998-11-03 2000-12-05 Lucent Technologies Planar waveguide optical amplifier
KR100280705B1 (en) 1998-11-05 2001-03-02 김순택 Electrode active material composition for lithium ion polymer battery and manufacturing method of electrode plate for lithium ion polymer battery using same
US6797429B1 (en) 1998-11-06 2004-09-28 Japan Storage Battery Co, Ltd. Non-aqueous electrolytic secondary cell
DE69932304T2 (en) 1998-11-09 2007-12-06 Ballard Power Systems Inc., Burnaby Electrical contact device for a fuel cell
US6384573B1 (en) 1998-11-12 2002-05-07 James Dunn Compact lightweight auxiliary multifunctional reserve battery engine starting system (and methods)
US6117279A (en) 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
JP2000162234A (en) 1998-11-30 2000-06-16 Matsushita Electric Ind Co Ltd Piezoelectric sensor circuit
DE69936706T2 (en) 1998-12-03 2008-04-30 Sumitomo Electric Industries, Ltd. LITHIUM BATTERY BACK
EP1524708A3 (en) 1998-12-16 2006-07-26 Battelle Memorial Institute Environmental barrier material and methods of making.
US6268695B1 (en) * 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
JP2000188099A (en) 1998-12-22 2000-07-04 Mitsubishi Chemicals Corp Manufacture of thin film type battery
GB9900396D0 (en) 1999-01-08 1999-02-24 Danionics As Arrangements of electrochemical cells
US6599662B1 (en) 1999-01-08 2003-07-29 Massachusetts Institute Of Technology Electroactive material for secondary batteries and methods of preparation
JP4074418B2 (en) 1999-01-11 2008-04-09 三菱化学株式会社 Thin film type lithium secondary battery
US6379835B1 (en) 1999-01-12 2002-04-30 Morgan Adhesives Company Method of making a thin film battery
US6290822B1 (en) 1999-01-26 2001-09-18 Agere Systems Guardian Corp. Sputtering method for forming dielectric films
US6302939B1 (en) 1999-02-01 2001-10-16 Magnequench International, Inc. Rare earth permanent magnet and method for making same
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
AU768057B2 (en) 1999-02-25 2003-11-27 Kaneka Corporation Integrated thin-film solar battery
US6210544B1 (en) 1999-03-08 2001-04-03 Alps Electric Co., Ltd. Magnetic film forming method
US6603391B1 (en) 1999-03-09 2003-08-05 Micron Technology, Inc. Phase shifters, interrogators, methods of shifting a phase angle of a signal, and methods of operating an interrogator
US6356764B1 (en) 1999-03-09 2002-03-12 Micron Technology, Inc. Wireless communication systems, interrogators and methods of communicating within a wireless communication system
US6379846B1 (en) 1999-03-16 2002-04-30 Sumitomo Chemical Company, Limited Non-aqueous electrolyte and lithium secondary battery using the same
US6277520B1 (en) 1999-03-19 2001-08-21 Ntk Powerdex, Inc. Thin lithium battery with slurry cathode
US6280875B1 (en) 1999-03-24 2001-08-28 Teledyne Technologies Incorporated Rechargeable battery structure with metal substrate
EP1039554B1 (en) 1999-03-25 2003-05-14 Kaneka Corporation Method of manufacturing thin film solar cell-modules
US6160215A (en) 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6148503A (en) 1999-03-31 2000-11-21 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
US6168884B1 (en) 1999-04-02 2001-01-02 Lockheed Martin Energy Research Corporation Battery with an in-situ activation plated lithium anode
US6242129B1 (en) 1999-04-02 2001-06-05 Excellatron Solid State, Llc Thin lithium film battery
US6398824B1 (en) 1999-04-02 2002-06-04 Excellatron Solid State, Llc Method for manufacturing a thin-film lithium battery by direct deposition of battery components on opposite sides of a current collector
US6855441B1 (en) * 1999-04-14 2005-02-15 Power Paper Ltd. Functionally improved battery and method of making same
CA2366540A1 (en) 1999-04-14 2000-10-19 Baruch Levanon Functionally improved battery and method of making same
US6416598B1 (en) 1999-04-20 2002-07-09 Reynolds Metals Company Free machining aluminum alloy with high melting point machining constituent and method of use
KR100296741B1 (en) 1999-05-11 2001-07-12 박호군 Battery with trench structure and fabrication method
JP3736205B2 (en) 1999-06-04 2006-01-18 三菱電機株式会社 Battery power storage device
US6281142B1 (en) 1999-06-04 2001-08-28 Micron Technology, Inc. Dielectric cure for reducing oxygen vacancies
US6046081A (en) 1999-06-10 2000-04-04 United Microelectronics Corp. Method for forming dielectric layer of capacitor
US6133670A (en) 1999-06-24 2000-10-17 Sandia Corporation Compact electrostatic comb actuator
US6413676B1 (en) 1999-06-28 2002-07-02 Lithium Power Technologies, Inc. Lithium ion polymer electrolytes
JP2001020065A (en) 1999-07-07 2001-01-23 Hitachi Metals Ltd Target for sputtering, its production and high melting point metal powder material
JP2001021744A (en) 1999-07-07 2001-01-26 Shin Etsu Chem Co Ltd Manufacture of optical waveguide substrate
JP2001025666A (en) 1999-07-14 2001-01-30 Nippon Sheet Glass Co Ltd Laminate and its production
US6290821B1 (en) 1999-07-15 2001-09-18 Seagate Technology Llc Sputter deposition utilizing pulsed cathode and substrate bias power
KR100456647B1 (en) * 1999-08-05 2004-11-10 에스케이씨 주식회사 Lithium ion polymer battery
US6249222B1 (en) 1999-08-17 2001-06-19 Lucent Technologies Inc. Method and apparatus for generating color based alerting signals
US6344795B1 (en) 1999-08-17 2002-02-05 Lucent Technologies Inc. Method and apparatus for generating temperature based alerting signals
US6414626B1 (en) 1999-08-20 2002-07-02 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of operating a wireless communication system, and methods of determining range of a remote communication device
US6356230B1 (en) 1999-08-20 2002-03-12 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of monitoring movement of a radio frequency identification device, methods of monitoring movement of a remote communication device and movement monitoring methods
US6537428B1 (en) 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
US6645675B1 (en) 1999-09-02 2003-11-11 Lithium Power Technologies, Inc. Solid polymer electrolytes
US6664006B1 (en) 1999-09-02 2003-12-16 Lithium Power Technologies, Inc. All-solid-state electrochemical device and method of manufacturing
US6392565B1 (en) 1999-09-10 2002-05-21 Eworldtrack, Inc. Automobile tracking and anti-theft system
US6528212B1 (en) * 1999-09-13 2003-03-04 Sanyo Electric Co., Ltd. Lithium battery
US6344366B1 (en) * 1999-09-15 2002-02-05 Lockheed Martin Energy Research Corporation Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing
US6296949B1 (en) 1999-09-16 2001-10-02 Ga-Tek Inc. Copper coated polyimide with metallic protective layer
JP4240679B2 (en) 1999-09-21 2009-03-18 ソニー株式会社 Method for producing sputtering target
US6296967B1 (en) 1999-09-24 2001-10-02 Electrofuel Inc. Lithium battery structure incorporating lithium pouch cells
TW457767B (en) * 1999-09-27 2001-10-01 Matsushita Electric Works Ltd Photo response semiconductor switch having short circuit load protection
JP4460742B2 (en) 1999-10-01 2010-05-12 日本碍子株式会社 Piezoelectric / electrostrictive device and manufacturing method thereof
US6368275B1 (en) 1999-10-07 2002-04-09 Acuson Corporation Method and apparatus for diagnostic medical information gathering, hyperthermia treatment, or directed gene therapy
DE19948839A1 (en) 1999-10-11 2001-04-12 Bps Alzenau Gmbh Conductive transparent layers and processes for their manufacture
US6500287B1 (en) 1999-10-14 2002-12-31 Forskarpatent I Uppsala Ab Color-modifying treatment of thin films
US20070196682A1 (en) 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US7198832B2 (en) 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US6413285B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Layered arrangements of lithium electrodes
US6529827B1 (en) * 1999-11-01 2003-03-04 Garmin Corporation GPS device with compass and altimeter and method for displaying navigation information
US6413284B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Encapsulated lithium alloy electrodes having barrier layers
US6271793B1 (en) 1999-11-05 2001-08-07 International Business Machines Corporation Radio frequency (RF) transponder (Tag) with composite antenna
CN1258830C (en) 1999-11-11 2006-06-07 皇家菲利浦电子有限公司 Lithium battery containing gel-electrolyte
US6340880B1 (en) * 1999-11-11 2002-01-22 Mitsumi Electric Co., Ltd. Method of protecting a chargeable electric cell
JP3999424B2 (en) 1999-11-16 2007-10-31 ローム株式会社 Terminal board, battery pack provided with terminal board, and method of manufacturing terminal board
US6797428B1 (en) 1999-11-23 2004-09-28 Moltech Corporation Lithium anodes for electrochemical cells
US6733924B1 (en) 1999-11-23 2004-05-11 Moltech Corporation Lithium anodes for electrochemical cells
US6582481B1 (en) 1999-11-23 2003-06-24 Johnson Research & Development Company, Inc. Method of producing lithium base cathodes
US7247408B2 (en) 1999-11-23 2007-07-24 Sion Power Corporation Lithium anodes for electrochemical cells
US6511516B1 (en) * 2000-02-23 2003-01-28 Johnson Research & Development Co., Inc. Method and apparatus for producing lithium based cathodes
US6350353B2 (en) 1999-11-24 2002-02-26 Applied Materials, Inc. Alternate steps of IMP and sputtering process to improve sidewall coverage
US6426863B1 (en) 1999-11-25 2002-07-30 Lithium Power Technologies, Inc. Electrochemical capacitor
US6294288B1 (en) * 1999-12-01 2001-09-25 Valence Technology, Inc. Battery cell having notched layers
WO2001040836A1 (en) 1999-12-02 2001-06-07 Gemfire Corporation Photodefinition of optical devices
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
JP3611765B2 (en) 1999-12-09 2005-01-19 シャープ株式会社 Secondary battery and electronic device using the same
JP2001176464A (en) 1999-12-17 2001-06-29 Sumitomo Electric Ind Ltd Nonaqueous electrolyte battery
US6426163B1 (en) 1999-12-21 2002-07-30 Alcatel Electrochemical cell
US6576546B2 (en) 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
JP2001171812A (en) 1999-12-22 2001-06-26 Tokyo Gas Co Ltd Storage facility in rock mass and its execution method
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
CN1307376A (en) * 2000-01-27 2001-08-08 钟馨稼 Rechargeable solid Cr-F-Li accumulator
US6372383B1 (en) 2000-01-31 2002-04-16 Korea Advanced Institute Of Science And Technology Method for preparing electrodes for Ni/Metal hydride secondary cells using Cu
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
TW523615B (en) 2000-02-17 2003-03-11 L3 Optics Inc Guided wave optical switch based on an active semiconductor amplifier and a passive optical component
AU3259101A (en) 2000-02-18 2001-08-27 Cypak Ab Method and device for identification and authentication
US6768246B2 (en) 2000-02-23 2004-07-27 Sri International Biologically powered electroactive polymer generators
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6410471B2 (en) 2000-03-07 2002-06-25 Shin-Etsu Chemical Co., Ltd. Method for preparation of sintered body of rare earth oxide
TR200202116T2 (en) * 2000-03-09 2003-03-21 Isovolta �Sterreichische Isolierstoffwerke The method of producing a photovoltaic thin film module.
FR2806198B1 (en) 2000-03-13 2003-08-15 Sagem RADIO INFORMATION EXCHANGE DEVICE
DE60101378T2 (en) 2000-03-15 2004-10-14 Asulab S.A. ANTENNA FOR MULTIPLE FREQUENCIES FOR SMALL INSTRUMENTS
JP2001259494A (en) 2000-03-17 2001-09-25 Matsushita Battery Industrial Co Ltd Thin film forming device
WO2001073865A2 (en) 2000-03-24 2001-10-04 Cymbet Corporation Continuous processing of thin-film batteries and like devices
US6387563B1 (en) 2000-03-28 2002-05-14 Johnson Research & Development, Inc. Method of producing a thin film battery having a protective packaging
JP4106644B2 (en) 2000-04-04 2008-06-25 ソニー株式会社 Battery and manufacturing method thereof
US6423106B1 (en) 2000-04-05 2002-07-23 Johnson Research & Development Method of producing a thin film battery anode
US6709778B2 (en) 2000-04-10 2004-03-23 Johnson Electro Mechanical Systems, Llc Electrochemical conversion system
GB2361244B (en) 2000-04-14 2004-02-11 Trikon Holdings Ltd A method of depositing dielectric
US6365319B1 (en) 2000-04-20 2002-04-02 Eastman Kodak Company Self-contained imaging media comprising opaque laminated support
JP4129667B2 (en) 2000-04-21 2008-08-06 富士フイルム株式会社 Battery built-in board
US20010052752A1 (en) 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
KR100341407B1 (en) 2000-05-01 2002-06-22 윤덕용 A Crystall ization method of lithium transition metal oxide thin films by plasma treatm ent
US6433465B1 (en) 2000-05-02 2002-08-13 The United States Of America As Represented By The Secretary Of The Navy Energy-harvesting device using electrostrictive polymers
US6423776B1 (en) 2000-05-02 2002-07-23 Honeywell International Inc. Oxygen scavenging high barrier polyamide compositions for packaging applications
US6760520B1 (en) 2000-05-09 2004-07-06 Teralux Corporation System and method for passively aligning and coupling optical devices
US6261917B1 (en) 2000-05-09 2001-07-17 Chartered Semiconductor Manufacturing Ltd. High-K MOM capacitor
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP4432206B2 (en) 2000-05-18 2010-03-17 株式会社ブリヂストン Method for forming laminated film
US6436156B1 (en) 2000-05-25 2002-08-20 The Gillette Company Zinc/air cell
EP1160900A3 (en) 2000-05-26 2007-12-12 Kabushiki Kaisha Riken Embossed current collector separator for electrochemical fuel cell
US6284406B1 (en) 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
US6524750B1 (en) 2000-06-17 2003-02-25 Eveready Battery Company, Inc. Doped titanium oxide additives
US6432577B1 (en) 2000-06-29 2002-08-13 Sandia Corporation Apparatus and method for fabricating a microbattery
JP2002026173A (en) * 2000-07-10 2002-01-25 Fuji Photo Film Co Ltd Ic device, substrate, and ic assembling substrate
US6524466B1 (en) 2000-07-18 2003-02-25 Applied Semiconductor, Inc. Method and system of preventing fouling and corrosion of biomedical devices and structures
US20040247921A1 (en) 2000-07-18 2004-12-09 Dodsworth Robert S. Etched dielectric film in hard disk drives
JP3608507B2 (en) * 2000-07-19 2005-01-12 住友電気工業株式会社 Method for producing alkali metal thin film member
KR100336407B1 (en) 2000-07-19 2002-05-10 박호군 Fabrication Method of Lithium Phosphate Target for High Performance Electrolyte of Thin Film Micro-Battery
US20020110733A1 (en) 2000-08-07 2002-08-15 Johnson Lonnie G. Systems and methods for producing multilayer thin film energy storage devices
US6402796B1 (en) 2000-08-07 2002-06-11 Excellatron Solid State, Llc Method of producing a thin film battery
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
EP1342395A2 (en) * 2000-08-15 2003-09-10 WORLD PROPERTIES, INC, an Illinois Corporation Multi-layer circuits and methods of manufacture thereof
WO2002015301A2 (en) 2000-08-16 2002-02-21 Polyplus Battery Company Layered arrangements of lithium electrodes
US6572173B2 (en) 2000-08-28 2003-06-03 Mueller Hermann-Frank Sun shield for vehicles
KR100387121B1 (en) 2000-08-31 2003-06-12 주식회사 애니셀 Multi-layered Thin Film Battery Vertically Integrated and Fabrication Method thereof
US6866963B2 (en) * 2000-09-04 2005-03-15 Samsung Sdi Co., Ltd. Cathode active material and lithium battery employing the same
US6632563B1 (en) 2000-09-07 2003-10-14 Front Edge Technology, Inc. Thin film battery and method of manufacture
US7056620B2 (en) 2000-09-07 2006-06-06 Front Edge Technology, Inc. Thin film battery and method of manufacture
CN1516907A (en) 2000-09-14 2004-07-28 ���Ͷ�����Ӧ�ü����о�Ժ Electrochemically activable layer or film
US6628876B1 (en) 2000-09-15 2003-09-30 Triquint Technology Holding Co. Method for making a planar waveguide
TW448318B (en) 2000-09-18 2001-08-01 Nat Science Council Erbium, Yttrium co-doped Titanium oxide thin film material for planar optical waveguide amplifier
US20020090758A1 (en) 2000-09-19 2002-07-11 Silicon Genesis Corporation Method and resulting device for manufacturing for double gated transistors
DE10165080B4 (en) 2000-09-20 2015-05-13 Hitachi Metals, Ltd. Silicon nitride powder and sintered body and method of making the same and printed circuit board therewith
US6637916B2 (en) 2000-10-05 2003-10-28 Muellner Hermann-Frank Lamp for vehicles
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
JP4532713B2 (en) * 2000-10-11 2010-08-25 東洋鋼鈑株式会社 Multilayer metal laminated film and method for producing the same
KR100389655B1 (en) 2000-10-14 2003-06-27 삼성에스디아이 주식회사 Lithium-ion secondary thin-film battery exhibiting good cycling stability and high ion-conductivity
US6622049B2 (en) 2000-10-16 2003-09-16 Remon Medical Technologies Ltd. Miniature implantable illuminator for photodynamic therapy
US6488822B1 (en) 2000-10-20 2002-12-03 Veecoleve, Inc. Segmented-target ionized physical-vapor deposition apparatus and method of operation
US6525976B1 (en) 2000-10-24 2003-02-25 Excellatron Solid State, Llc Systems and methods for reducing noise in mixed-mode integrated circuits
JP2002140776A (en) 2000-11-01 2002-05-17 Matsushita Electric Ind Co Ltd Detector of human body state and system for confirming human body state
US6413382B1 (en) 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US6863699B1 (en) 2000-11-03 2005-03-08 Front Edge Technology, Inc. Sputter deposition of lithium phosphorous oxynitride material
JP3812324B2 (en) 2000-11-06 2006-08-23 日本電気株式会社 Lithium secondary battery and manufacturing method thereof
US6494999B1 (en) 2000-11-09 2002-12-17 Honeywell International Inc. Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode
KR100389908B1 (en) 2000-11-18 2003-07-04 삼성에스디아이 주식회사 Anode thin film for Lithium secondary battery
DE60129196T2 (en) 2000-11-18 2007-10-11 Samsung SDI Co., Ltd., Suwon Thin-film anode for lithium-containing secondary battery
JP4132647B2 (en) 2000-11-21 2008-08-13 シャープ株式会社 Thin secondary battery
US20020106297A1 (en) 2000-12-01 2002-08-08 Hitachi Metals, Ltd. Co-base target and method of producing the same
NL1016779C2 (en) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Mold, method for manufacturing precision products with the aid of a mold, as well as precision products, in particular microsieves and membrane filters, manufactured with such a mold.
JP4461656B2 (en) 2000-12-07 2010-05-12 セイコーエプソン株式会社 Photoelectric conversion element
US20020071989A1 (en) 2000-12-08 2002-06-13 Verma Surrenda K. Packaging systems and methods for thin film solid state batteries
US20020091929A1 (en) 2000-12-19 2002-07-11 Jakob Ehrensvard Secure digital signing of data
WO2002050933A2 (en) 2000-12-21 2002-06-27 Moltech Corporation Lithium anodes for electrochemical cells
US6444336B1 (en) 2000-12-21 2002-09-03 The Regents Of The University Of California Thin film dielectric composite materials
US6620545B2 (en) 2001-01-05 2003-09-16 Visteon Global Technologies, Inc. ETM based battery
US6650000B2 (en) 2001-01-16 2003-11-18 International Business Machines Corporation Apparatus and method for forming a battery in an integrated circuit
US6533907B2 (en) 2001-01-19 2003-03-18 Symmorphix, Inc. Method of producing amorphous silicon for hard mask and waveguide applications
US6673716B1 (en) 2001-01-30 2004-01-06 Novellus Systems, Inc. Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
US6558836B1 (en) 2001-02-08 2003-05-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Structure of thin-film lithium microbatteries
US6589299B2 (en) 2001-02-13 2003-07-08 3M Innovative Properties Company Method for making electrode
WO2002071506A1 (en) 2001-02-15 2002-09-12 Emagin Corporation Thin film encapsulation of organic light emitting diode devices
US20020139662A1 (en) 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
US20020164441A1 (en) 2001-03-01 2002-11-07 The University Of Chicago Packaging for primary and secondary batteries
US7048400B2 (en) 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
US7164206B2 (en) 2001-03-28 2007-01-16 Intel Corporation Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer
US6797137B2 (en) 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
US7033406B2 (en) 2001-04-12 2006-04-25 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US7914755B2 (en) 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US7595109B2 (en) 2001-04-12 2009-09-29 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US6677070B2 (en) * 2001-04-19 2004-01-13 Hewlett-Packard Development Company, L.P. Hybrid thin film/thick film solid oxide fuel cell and method of manufacturing the same
US6782290B2 (en) 2001-04-27 2004-08-24 Medtronic, Inc. Implantable medical device with rechargeable thin-film microbattery power source
US7744735B2 (en) 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
JP2002344115A (en) 2001-05-16 2002-11-29 Matsushita Electric Ind Co Ltd Method of forming film and method of manufacturing printed board
US6650942B2 (en) 2001-05-30 2003-11-18 Medtronic, Inc. Implantable medical device with dual cell power source
US6517968B2 (en) * 2001-06-11 2003-02-11 Excellatron Solid State, Llc Thin lithium film battery
US6752842B2 (en) 2001-06-18 2004-06-22 Power Paper Ltd. Manufacture of flexible thin layer electrochemical cell
JP3737389B2 (en) 2001-06-19 2006-01-18 京セラ株式会社 battery
JP4183401B2 (en) 2001-06-28 2008-11-19 三洋電機株式会社 Method for manufacturing electrode for lithium secondary battery and lithium secondary battery
JP3929839B2 (en) * 2001-06-28 2007-06-13 松下電器産業株式会社 Batteries and battery packs
US6768855B1 (en) 2001-07-05 2004-07-27 Sandia Corporation Vertically-tapered optical waveguide and optical spot transformer formed therefrom
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6758404B2 (en) 2001-08-03 2004-07-06 General Instrument Corporation Media cipher smart card
US7022431B2 (en) * 2001-08-20 2006-04-04 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
US7335441B2 (en) 2001-08-20 2008-02-26 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
US6500676B1 (en) 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
WO2003019988A1 (en) 2001-08-24 2003-03-06 Dai Nippon Printing Co., Ltd. Multi-face forming mask device for vacuum deposition
KR100382767B1 (en) 2001-08-25 2003-05-09 삼성에스디아이 주식회사 Anode thin film for Lithium secondary battery and manufacturing method thereof
CN1974472B (en) 2001-08-28 2010-06-16 Tdk株式会社 Composition for thin-film capacitive device, insulating film, thin-film capacitive device, and capacitor
JP4249616B2 (en) 2001-09-03 2009-04-02 パナソニック株式会社 Method for producing electrochemical element
US7118825B2 (en) 2001-09-05 2006-10-10 Omnitek Partners Llc Conformal power supplies
US6637906B2 (en) 2001-09-11 2003-10-28 Recot, Inc. Electroluminescent flexible film for product packaging
TW560102B (en) 2001-09-12 2003-11-01 Itn Energy Systems Inc Thin-film electrochemical devices on fibrous or ribbon-like substrates and methd for their manufacture and design
US20030068559A1 (en) 2001-09-12 2003-04-10 Armstrong Joseph H. Apparatus and method for the design and manufacture of multifunctional composite materials with power integration
US6838209B2 (en) 2001-09-21 2005-01-04 Eveready Battery Company, Inc. Flexible thin battery and method of manufacturing same
CA2406500C (en) 2001-10-01 2008-04-01 Research In Motion Limited An over-voltage protection circuit for use in a charging circuit
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
JP2003124491A (en) 2001-10-15 2003-04-25 Sharp Corp Thin film solar cell module
JP4015835B2 (en) 2001-10-17 2007-11-28 松下電器産業株式会社 Semiconductor memory device
FR2831318B1 (en) 2001-10-22 2006-06-09 Commissariat Energie Atomique QUICK RECHARGE ENERGY STORAGE DEVICE IN THE FORM OF THIN FILMS
US6666982B2 (en) 2001-10-22 2003-12-23 Tokyo Electron Limited Protection of dielectric window in inductively coupled plasma generation
JP3708474B2 (en) 2001-10-22 2005-10-19 松下電器産業株式会社 Semiconductor device
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
KR100424637B1 (en) 2001-10-25 2004-03-24 삼성에스디아이 주식회사 A thin film for lithium secondary battery and a method of preparing the same
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6805999B2 (en) 2001-11-13 2004-10-19 Midwest Research Institute Buried anode lithium thin film battery and process for forming the same
KR100425585B1 (en) 2001-11-22 2004-04-06 한국전자통신연구원 Lithium polymer secondary battery having crosslinked polymer protective thin film and method for manufacturing the same
US20030097858A1 (en) 2001-11-26 2003-05-29 Christof Strohhofer Silver sensitized erbium ion doped planar waveguide amplifier
US6830846B2 (en) 2001-11-29 2004-12-14 3M Innovative Properties Company Discontinuous cathode sheet halfcell web
US20030109903A1 (en) 2001-12-12 2003-06-12 Epic Biosonics Inc. Low profile subcutaneous enclosure
US6683749B2 (en) 2001-12-19 2004-01-27 Storage Technology Corporation Magnetic transducer having inverted write element with zero delta in pole tip width
US6911280B1 (en) 2001-12-21 2005-06-28 Polyplus Battery Company Chemical protection of a lithium surface
US6737789B2 (en) 2002-01-18 2004-05-18 Leon J. Radziemski Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods
US20040081415A1 (en) 2002-01-22 2004-04-29 Demaray Richard E. Planar optical waveguide amplifier with mode size converter
US20030143853A1 (en) 2002-01-31 2003-07-31 Celii Francis G. FeRAM capacitor stack etch
DE10204138B4 (en) 2002-02-01 2004-05-13 Robert Bosch Gmbh communication device
US20030152829A1 (en) 2002-02-12 2003-08-14 Ji-Guang Zhang Thin lithium film battery
JP3565207B2 (en) 2002-02-27 2004-09-15 日産自動車株式会社 Battery pack
US6713987B2 (en) 2002-02-28 2004-03-30 Front Edge Technology, Inc. Rechargeable battery having permeable anode current collector
US7081693B2 (en) 2002-03-07 2006-07-25 Microstrain, Inc. Energy harvesting for wireless sensor operation and data transmission
US20030175142A1 (en) 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US20030174391A1 (en) 2002-03-16 2003-09-18 Tao Pan Gain flattened optical amplifier
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6885028B2 (en) 2002-03-25 2005-04-26 Sharp Kabushiki Kaisha Transistor array and active-matrix substrate
TWI283031B (en) 2002-03-25 2007-06-21 Epistar Corp Method for integrating compound semiconductor with substrate of high thermal conductivity
US6792026B2 (en) 2002-03-26 2004-09-14 Joseph Reid Henrichs Folded cavity solid-state laser
JP2003282142A (en) 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd Thin film laminate, thin film battery, capacitor, and manufacturing method and device of thin film laminate
US7208195B2 (en) 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
KR100454092B1 (en) 2002-04-29 2004-10-26 광주과학기술원 Fabrication method of cathod film for thin-film battery through rapid thermal annealing method
US6949389B2 (en) 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
DE10318187B4 (en) 2002-05-02 2010-03-18 Osram Opto Semiconductors Gmbh Encapsulation method for organic light emitting diode devices
JP4043296B2 (en) 2002-06-13 2008-02-06 松下電器産業株式会社 All solid battery
US6700491B2 (en) 2002-06-14 2004-03-02 Sensormatic Electronics Corporation Radio frequency identification tag with thin-film battery for antenna
US6780208B2 (en) 2002-06-28 2004-08-24 Hewlett-Packard Development Company, L.P. Method of making printed battery structures
US6818356B1 (en) 2002-07-09 2004-11-16 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US7410730B2 (en) 2002-07-09 2008-08-12 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US7362659B2 (en) 2002-07-11 2008-04-22 Action Manufacturing Company Low current microcontroller circuit
US6835493B2 (en) 2002-07-26 2004-12-28 Excellatron Solid State, Llc Thin film battery
US6770176B2 (en) 2002-08-02 2004-08-03 Itn Energy Systems. Inc. Apparatus and method for fracture absorption layer
JP3729164B2 (en) 2002-08-05 2005-12-21 日産自動車株式会社 Automotive battery
JP2004071305A (en) 2002-08-05 2004-03-04 Hitachi Maxell Ltd Non-aqueous electrolyte rechargeable battery
US20080003496A1 (en) * 2002-08-09 2008-01-03 Neudecker Bernd J Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US6916679B2 (en) 2002-08-09 2005-07-12 Infinite Power Solutions, Inc. Methods of and device for encapsulation and termination of electronic devices
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
KR20040017478A (en) 2002-08-21 2004-02-27 한국과학기술원 Manufacturing Method for Printed Circuit Board and Multiple PCB
TWI274199B (en) 2002-08-27 2007-02-21 Symmorphix Inc Optically coupling into highly uniform waveguides
US20040048157A1 (en) 2002-09-11 2004-03-11 Neudecker Bernd J. Lithium vanadium oxide thin-film battery
US6994933B1 (en) * 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
JP4614625B2 (en) 2002-09-30 2011-01-19 三洋電機株式会社 Method for manufacturing lithium secondary battery
US7282302B2 (en) 2002-10-15 2007-10-16 Polyplus Battery Company Ionically conductive composites for protection of active metal anodes
JP2004146297A (en) 2002-10-28 2004-05-20 Matsushita Electric Ind Co Ltd Solid battery
US20040081860A1 (en) 2002-10-29 2004-04-29 Stmicroelectronics, Inc. Thin-film battery equipment
JP2004149849A (en) 2002-10-30 2004-05-27 Hitachi Chem Co Ltd Method for depositing metal thin film, and substrate with electrode
US20040085002A1 (en) 2002-11-05 2004-05-06 Pearce Michael Baker Method and apparatus for an incidental use piezoelectric energy source with thin-film battery
JP2004158268A (en) 2002-11-06 2004-06-03 Sony Corp Film forming device
CN1723587A (en) 2002-11-07 2006-01-18 碎云股份有限公司 Integrated circuit package including miniature antenna
KR100575329B1 (en) 2002-11-27 2006-05-02 마쯔시다덴기산교 가부시키가이샤 Solid electrolyte and all-solid battery using the same
KR100682883B1 (en) 2002-11-27 2007-02-15 삼성전자주식회사 Solid electrolyte and battery employing the same
JP4777593B2 (en) 2002-11-29 2011-09-21 株式会社オハラ Method for producing lithium ion secondary battery
EP1431422B1 (en) 2002-12-16 2006-12-13 Basf Aktiengesellschaft Method for manufacturing lithium
JP4072049B2 (en) 2002-12-25 2008-04-02 京セラ株式会社 Fuel cell and fuel cell
TWI261045B (en) 2002-12-30 2006-09-01 Ind Tech Res Inst Composite nanofibers and their fabrications
EP1590823A4 (en) 2003-01-02 2007-05-30 Cymbet Corp Solid-state battery-powered devices and manufacturing methods
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
TWI341337B (en) 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
US20040135160A1 (en) 2003-01-10 2004-07-15 Eastman Kodak Company OLED device
IL153895A (en) 2003-01-12 2013-01-31 Orion Solar Systems Ltd Solar cell device
KR100513726B1 (en) 2003-01-30 2005-09-08 삼성전자주식회사 Solid electrolytes, batteries employing the same and method for preparing the same
DE10304824A1 (en) 2003-01-31 2004-08-12 Varta Microbattery Gmbh Thin electronic chip card
RU2241281C2 (en) 2003-02-10 2004-11-27 Институт химии и химической технологии СО РАН Method for producing thin lithium cobaltate films
JP2004273436A (en) 2003-02-18 2004-09-30 Matsushita Electric Ind Co Ltd All solid thin film laminated battery
CN1756856B (en) 2003-02-27 2011-10-12 希莫菲克斯公司 Dielectric barrier layer films
US6936407B2 (en) 2003-02-28 2005-08-30 Osram Opto Semiconductors Gmbh Thin-film electronic device module
KR100590376B1 (en) 2003-03-20 2006-06-19 마쯔시다덴기산교 가부시키가이샤 An integrated battery
CN1274052C (en) 2003-03-21 2006-09-06 比亚迪股份有限公司 Method for producing lithium ion secondary cell
JP4635407B2 (en) 2003-03-25 2011-02-23 三洋電機株式会社 Non-aqueous electrolyte for secondary battery and non-aqueous electrolyte secondary battery
US6955986B2 (en) 2003-03-27 2005-10-18 Asm International N.V. Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
US20070141468A1 (en) 2003-04-03 2007-06-21 Jeremy Barker Electrodes Comprising Mixed Active Particles
US7253494B2 (en) 2003-04-04 2007-08-07 Matsushita Electric Industrial Co., Ltd. Battery mounted integrated circuit device having diffusion layers that prevent cations serving to charge and discharge battery from diffusing into the integrated circuit region
WO2004093223A2 (en) 2003-04-14 2004-10-28 Massachusetts Institute Of Technology Integrated thin film batteries on silicon integrated circuits
KR100508945B1 (en) 2003-04-17 2005-08-17 삼성에스디아이 주식회사 Negative electrode for lithium battery, method of preparing same, and lithium battery comprising same
US7045246B2 (en) 2003-04-22 2006-05-16 The Aerospace Corporation Integrated thin film battery and circuit module
US7088031B2 (en) 2003-04-22 2006-08-08 Infinite Power Solutions, Inc. Method and apparatus for an ambient energy battery or capacitor recharge system
US6936377B2 (en) 2003-05-13 2005-08-30 C. Glen Wensley Card with embedded IC and electrochemical cell
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US6886240B2 (en) 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
WO2005008828A1 (en) 2003-07-11 2005-01-27 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
US6852139B2 (en) * 2003-07-11 2005-02-08 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
EP1665416B1 (en) 2003-08-01 2014-04-30 Bathium Canada Inc. Cathode material for polymer batteries and method of preparing same
US20050070097A1 (en) * 2003-09-29 2005-03-31 International Business Machines Corporation Atomic laminates for diffusion barrier applications
US7230321B2 (en) 2003-10-13 2007-06-12 Mccain Joseph Integrated circuit package with laminated power cell having coplanar electrode
US20050079418A1 (en) 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
FR2861218B1 (en) * 2003-10-16 2007-04-20 Commissariat Energie Atomique LAYER AND METHOD FOR PROTECTING MICROBATTERIES BY A CERAMIC-METAL BILOUCHE
US20050133361A1 (en) 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
EP1544917A1 (en) * 2003-12-15 2005-06-22 Dialog Semiconductor GmbH Integrated battery pack with lead frame connection
JP2005196971A (en) 2003-12-26 2005-07-21 Matsushita Electric Ind Co Ltd Negative electrode for lithium secondary battery, its manufacturing method, and lithium secondary battery
CN1957487A (en) 2004-01-06 2007-05-02 Cymbet公司 Layered barrier structure having one or more definable layers and method
TWI302760B (en) 2004-01-15 2008-11-01 Lg Chemical Ltd Electrochemical device comprising aliphatic nitrile compound
JP3859645B2 (en) 2004-01-16 2006-12-20 Necラミリオンエナジー株式会社 Film exterior electrical device
US7968233B2 (en) 2004-02-18 2011-06-28 Solicore, Inc. Lithium inks and electrodes and batteries made therefrom
US7624499B2 (en) * 2004-02-26 2009-12-01 Hei, Inc. Flexible circuit having an integrally formed battery
WO2005085138A1 (en) 2004-03-06 2005-09-15 Werner Weppner Chemically stable solid lithium ion conductors
DE102004010892B3 (en) 2004-03-06 2005-11-24 Christian-Albrechts-Universität Zu Kiel Chemically stable solid Li ion conductor of garnet-like crystal structure and high Li ion conductivity useful for batteries, accumulators, supercaps, fuel cells, sensors, windows displays
JP4418262B2 (en) 2004-03-12 2010-02-17 三井造船株式会社 Substrate / mask fixing device
JP4150690B2 (en) 2004-03-29 2008-09-17 株式会社東芝 Battery integrated semiconductor element
US7691458B2 (en) * 2004-03-31 2010-04-06 Intel Corporation Carrier substrate with a thermochromatic coating
US20050255828A1 (en) 2004-05-03 2005-11-17 Critical Wireless Corporation Remote terminal unit and remote monitoring and control system
US7052741B2 (en) 2004-05-18 2006-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a fibrous structure for use in electrochemical applications
WO2006014622A2 (en) * 2004-07-19 2006-02-09 Face Bradbury R Footwear incorporating piezoelectric energy harvesting system
US7195950B2 (en) * 2004-07-21 2007-03-27 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices
US7645246B2 (en) * 2004-08-11 2010-01-12 Omnitek Partners Llc Method for generating power across a joint of the body during a locomotion cycle
JP4892180B2 (en) * 2004-08-20 2012-03-07 セイコーインスツル株式会社 ELECTROCHEMICAL CELL, ITS MANUFACTURING METHOD, AND ITS VISION INSPECTION METHOD
TWI331634B (en) * 2004-12-08 2010-10-11 Infinite Power Solutions Inc Deposition of licoo2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US7670724B1 (en) * 2005-01-05 2010-03-02 The United States Of America As Represented By The Secretary Of The Army Alkali-hydroxide modified poly-vinylidene fluoride/polyethylene oxide lithium-air battery
US20060155545A1 (en) 2005-01-11 2006-07-13 Hosanna, Inc. Multi-source powered audio playback system
WO2006078866A2 (en) 2005-01-19 2006-07-27 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electric current-producing device having sulfone-based electrolyte
EP1847025A2 (en) 2005-01-20 2007-10-24 BAE SYSTEMS Information and Electronic Systems Integration Inc. Microradio design, manufacturing method and applications for the use of microradios
US20090302226A1 (en) 2005-02-08 2009-12-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Solid-state neutron and alpha particles detector and methods for manufacturing and use thereof
DE102005014427B4 (en) 2005-03-24 2008-05-15 Infineon Technologies Ag Method for encapsulating a semiconductor device
EP1713024A1 (en) 2005-04-14 2006-10-18 Ngk Spark Plug Co., Ltd. A card, a method of manufacturing the card, and a thin type battery for the card
US20060237543A1 (en) 2005-04-20 2006-10-26 Ngk Spark Plug Co., Ltd. Card, manufacturing method of card, and thin type battery for card
US20070021156A1 (en) * 2005-07-19 2007-01-25 Hoong Chow T Compact radio communications device
US8182661B2 (en) * 2005-07-27 2012-05-22 Applied Materials, Inc. Controllable target cooling
US7400253B2 (en) 2005-08-04 2008-07-15 Mhcmos, Llc Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof
JP5364373B2 (en) * 2005-08-09 2013-12-11 ポリプラス バッテリー カンパニー Protected anode configuration, method for manufacturing protected anode configuration and battery cell
CA2630198C (en) 2005-08-10 2015-05-05 Bionic Power Inc. Methods and apparatus for harvesting biomechanical energy
MY163766A (en) 2005-08-12 2017-10-31 Carlsberg Breweries As An assembly for dispensing beverage
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7553582B2 (en) 2005-09-06 2009-06-30 Oak Ridge Micro-Energy, Inc. Getters for thin film battery hermetic package
US7202825B2 (en) 2005-09-15 2007-04-10 Motorola, Inc. Wireless communication device with integrated battery/antenna system
US7324341B2 (en) * 2005-09-22 2008-01-29 Delphi Technologies, Inc. Electronics assembly and heat pipe device
US7345647B1 (en) * 2005-10-05 2008-03-18 Sandia Corporation Antenna structure with distributed strip
JP2007107752A (en) 2005-10-11 2007-04-26 Yamaoka Kinzoku Kogyo Kk Outdoor stove
US20070187836A1 (en) 2006-02-15 2007-08-16 Texas Instruments Incorporated Package on package design a combination of laminate and tape substrate, with back-to-back die combination
DE102006009789B3 (en) 2006-03-01 2007-10-04 Infineon Technologies Ag Method for producing a semiconductor component from a composite board with semiconductor chips and plastic housing composition
CN102360442B (en) 2006-03-10 2015-01-07 株式会社半导体能源研究所 Semiconductor device and operating method thereof
KR20090008255A (en) 2006-03-22 2009-01-21 파워캐스트 코포레이션 Method and apparatus for implementation of a wireless power supply
US8155712B2 (en) 2006-03-23 2012-04-10 Sibeam, Inc. Low power very high-data rate device
US20070235320A1 (en) 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
DE102006025671B4 (en) 2006-06-01 2011-12-15 Infineon Technologies Ag Process for the preparation of thin integrated semiconductor devices
US8162230B2 (en) 2006-10-17 2012-04-24 Powerid Ltd. Method and circuit for providing RF isolation of a power source from an antenna and an RFID device employing such a circuit
JP4058456B2 (en) 2006-10-23 2008-03-12 富士通株式会社 Function expansion device for information processing device
DE102006054309A1 (en) 2006-11-17 2008-05-21 Dieter Teckhaus Battery cell with contact element arrangement
US7466274B2 (en) 2006-12-20 2008-12-16 Cheng Uei Precision Industry Co., Ltd. Multi-band antenna
JP4466668B2 (en) 2007-03-20 2010-05-26 セイコーエプソン株式会社 Manufacturing method of semiconductor device
US7915089B2 (en) 2007-04-10 2011-03-29 Infineon Technologies Ag Encapsulation method
US7862627B2 (en) 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
US7848715B2 (en) 2007-05-03 2010-12-07 Infineon Technologies Ag Circuit and method
DE102007030604A1 (en) 2007-07-02 2009-01-08 Weppner, Werner, Prof. Dr. Ion conductor with garnet structure
US20110304430A1 (en) 2007-07-30 2011-12-15 Bae Systems Information And Electronic Systems Integration Inc. Method of tracking a container using microradios
US20090092903A1 (en) 2007-08-29 2009-04-09 Johnson Lonnie G Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same
US8634773B2 (en) 2007-10-12 2014-01-21 Cochlear Limited Short range communications for body contacting devices
WO2009089417A1 (en) * 2008-01-11 2009-07-16 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US8056814B2 (en) 2008-02-27 2011-11-15 Tagsys Sas Combined EAS/RFID tag
TW200952250A (en) 2008-06-12 2009-12-16 Arima Comm Co Ltd Portable electronic device having broadcast antenna
CN102119454B (en) * 2008-08-11 2014-07-30 无穷动力解决方案股份有限公司 Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8389160B2 (en) 2008-10-07 2013-03-05 Envia Systems, Inc. Positive electrode materials for lithium ion batteries having a high specific discharge capacity and processes for the synthesis of these materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098281A1 (en) * 2005-10-11 2009-04-16 Ji-Guang Zhang Method of manufacturing lithium battery

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