US20090186479A1 - Semiconductor processing system including vaporizer and method for using same - Google Patents
Semiconductor processing system including vaporizer and method for using same Download PDFInfo
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- US20090186479A1 US20090186479A1 US12/318,971 US31897109A US2009186479A1 US 20090186479 A1 US20090186479 A1 US 20090186479A1 US 31897109 A US31897109 A US 31897109A US 2009186479 A1 US2009186479 A1 US 2009186479A1
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- 238000012545 processing Methods 0.000 title claims abstract description 42
- 239000006200 vaporizer Substances 0.000 title description 29
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Definitions
- the present invention relates to a semiconductor processing system including a vaporizer for generating a process gas from a liquid material, and particularly to a system comprising a film formation processing apparatus for performing, e.g., ALD (Atomic Layer Deposition), MLD (Molecule Layer Deposition), or low-pressure CVD (Chemical Vapor Deposition).
- ALD Atomic Layer Deposition
- MLD Molecule Layer Deposition
- CVD Chemical Vapor Deposition
- semiconductor process includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an FPD (Flat Panel Display), e.g., an LCD (Liquid Crystal Display), by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.
- FPD Full Panel Display
- LCD Liquid Crystal Display
- a film formation process for forming a predetermined film on the surface of a semiconductor wafer is performed in manufacturing semiconductor devices.
- a process of this kind is performed, using a low-pressure CVD apparatus.
- a source material is supplied in a gaseous state to promote a chemical reaction, thereby depositing a thin film on the surface of a wafer.
- a process gas is generated by vaporizing a liquid material, and is supplied into a process chamber as a film formation gas.
- These supply passages are connected to a nozzle at their lower ends, from which a liquid material and a carrier gas are delivered to atomize the liquid material into mist by means of a nebulizer action. Then, the atomized liquid material is heated and thereby vaporized.
- the pressure inside the vaporizing chamber needs to be lower than a pressure limit value for vaporizing the liquid material, and thus, conventionally, the pressure inside the vaporizing chamber is preferably set to be as low as possible.
- a liquid material comprising a solid material, such as Sr(THD) 2 (strontium bistetramethyl-heptanedionato) or Ti(MPD)(THD) 2 (titanium methylpentanedionatobistetramethylheptanedionato), or a high viscosity liquid source, such as Sr(METHD) 2 (strontium bismethoxyethoxytetramethylheptanedionato), dissolved in a solvent.
- the pressure inside the vaporizing chamber is monitored by the pressure sensor, so that, when a decrease in the pressure inside the vaporizing chamber is detected due to progress of clogging in the tip of the nozzle, the liquid material is stopped to interrupt the film formation process. Then, a solvent that has a vaporizing temperature higher than the solvent of the liquid material is supplied into the feed line to stop drying of the interior of the feed line and to clean the interior of the feed line by dissolving an organic metal derived from the liquid material and precipitated due to a decrease in the pressure inside the vaporizing chamber. Consequently, the tip of the feed line can be prevented from being completely clogged, so as to eliminate a working operation time of about two days for replacing the feed line, thereby improving the productivity.
- Patent Document 1 when a decrease in the pressure inside the vaporizing chamber is detected during a film formation process, the substrate being treated by the film formation process is suspended halfway. Then, this substrate is discarded, because this substrate may be contaminated with particles of e.g., the organic metal precipitated due to a decrease in the pressure inside the vaporizing chamber. Accordingly, the invention disclosed in Patent Document 1 can safely stop the apparatus to prevent the feed line from being completely clogged when the pressure inside the vaporizing chamber is lowered, but needs to discard the substrate being treated by the film formation process and to reset the process with a new substrate.
- An object of the present invention is to provide a semiconductor processing system including a vaporizer for generating a process gas from a liquid material, and a method for using the system, which can prevent nozzle clogging of the vaporizer, thereby stably performing a semiconductor process, such as a film formation process, without stopping the semiconductor process.
- a semiconductor processing system comprising a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus, the semiconductor processing apparatus comprising: a process chamber configured to accommodate a target substrate; a support member configured to support the target substrate inside the process chamber; a heater configured to heat the target substrate inside the process chamber; and an exhaust mechanism configured to exhaust gas from inside the process chamber, and the gas supply apparatus comprising: a container that forms a vaporizing chamber configured to vaporize a liquid material; a nozzle configured to atomize the liquid material by a carrier gas and to supply the liquid material into the vaporizing chamber; a liquid material supply passage configured to supply the liquid material to the nozzle; a carrier gas supply passage configured to supply the carrier gas to the nozzle; a heater configured to heat an interior of the vaporizing chamber to vaporize the liquid material thus atomized and thereby to generate the process gas; a gas supply passage configured to supply the process gas from the vaporizing chamber to the process chamber
- a method for using a semiconductor processing system comprising a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus
- the semiconductor processing apparatus comprising: a process chamber configured to accommodate a target substrate; a support member configured to support the target substrate inside the process chamber; a heater configured to heat the target substrate inside the process chamber; and an exhaust mechanism configured to exhaust gas from inside the process chamber
- the gas supply apparatus comprising: a container that forms a vaporizing chamber configured to vaporize a liquid material; a nozzle configured to atomize the liquid material by a carrier gas and to supply the liquid material into the vaporizing chamber; a liquid material supply passage configured to supply the liquid material to the nozzle; a carrier gas supply passage configured to supply the carrier gas to the nozzle; a heater configured to heat an interior of the vaporizing chamber to vaporize the liquid material thus atomized and thereby to generate the process gas; a gas supply passage configured to supply the process gas from the vaporizing chamber
- FIG. 1 is a structural view schematically showing a semiconductor processing system (film formation system) according to a first embodiment of the present invention, which includes a semiconductor processing apparatus and a gas supply apparatus;
- FIG. 2 is a sectional side view showing a vaporizer used in the gas supply apparatus of the system shown in FIG. 1 ;
- FIG. 3 is a view showing changes of the pressure inside the vaporizing chamber of the vaporizer shown in FIG. 2 ;
- FIG. 4 is a structural view schematically showing a semiconductor processing system according to a second embodiment of the present invention.
- FIG. 5 is a structural view schematically showing a semiconductor processing system according to a third embodiment of the present invention.
- FIG. 1 is a structural view schematically showing a semiconductor processing system (film formation system) according to a first embodiment of the present invention.
- FIG. 2 is a sectional side view showing a vaporizer used in the gas supply apparatus of the system shown in FIG. 1 .
- the film formation system 1 according to this embodiment includes a film formation processing apparatus (semiconductor processing apparatus) 10 for performing a predetermined film formation process on target substrates, such as semiconductor wafers (which may be simply referred to as wafers), and a gas supply apparatus 20 for supplying a predetermined process gas into the film formation processing apparatus 10 .
- a film formation processing apparatus semiconductor processing apparatus
- gas supply apparatus 20 for supplying a predetermined process gas into the film formation processing apparatus 10 .
- the film formation section 10 comprises a low-pressure CVD apparatus of the batch type having a vertical reaction tube 11 used as a reaction chamber (process chamber).
- a wafer boat 12 that can support a number of wafers W is loaded and unloaded into and from the reaction tube 11 .
- a heater 13 is disposed around the reaction tube 11 to heat the wafers W.
- a vacuum pump 15 used as vacuum exhaust means is disposed to maintain the interior of the reaction tube 11 at a predetermined vacuum level.
- a process gas supply line 30 is connected to the reaction tube 11 to supply a predetermined process gas, as described later, to perform a predetermined film formation process on the wafers.
- the gas supply apparatus 20 includes a storage section 21 that stores liquid materials and a solvent used for the liquid materials, a vaporizer 200 for vaporizing a liquid material supplied from the storage section 21 , and piping lines connecting these members.
- the storage section 21 includes a first storage vessel 21 a and a second storage vessel 21 b that store different liquid materials and a third storage vessel 21 c that stores a solvent used for the liquid materials.
- the liquid material stored in the first storage vessel 21 a is formed of, e.g., a solid material of Sr(THD) 2 dissolved in THF (Tetrahydrofuran) serving as a solvent.
- the liquid material stored in the second storage vessel 21 b is formed of, e.g., Ti(MPD)(THD) 2 dissolved in the solvent.
- These liquid materials are alternately vaporized and supplied to perform a film formation process according to this embodiment. However, these liquid materials may be mixed and supplied to perform a film formation process. Alternatively, these liquid materials may be separately supplied to perform different processes.
- a collecting line 23 is connected to the first storage vessel 21 a through a first source material supply line 22 a , to the second storage vessel 21 b through a second source material supply line 22 b , and to the third storage vessel 21 c through a solvent supply line 22 c .
- Each of the liquid materials is supplied through the collecting line 23 and a valve V 12 into the vaporizer 200 .
- the solvent can be supplied into the vaporizer 200 to perform cleaning.
- These supply lines 22 a , 22 b , and 22 c are provided with valves V 1 to V 6 and flow rate regulators M 1 to M 3 .
- the solvent supply line 22 c is connected to the first and second source material supply lines 22 a and 22 b through connection lines 24 respectively provided with valves V 7 and V 8 .
- the supply lines 22 a , 22 b , and 22 c may be provided with a temperature adjusting mechanism that surrounds the lines to set the liquid materials and solvent at a constant temperature, such as about 40° C.
- a pressurized gas supply line 25 is connected to the first storage vessel 21 a , second storage vessel 21 b , and third storage vessel 21 c through valves V 9 to V 11 , respectively.
- the other end of the pressurized gas supply line 25 is connected to a pressurized gas supply source (not shown) for supplying a pressurized gas, such as helium (He) gas.
- a pressurized gas such as helium (He) gas.
- the collecting line 23 is used for supplying the liquid materials during a film formation process, and thus can be also called a liquid material supply line 23 .
- the liquid material supply line 23 is connected to the vaporizer 200 through a cooling block 40 .
- the cooling block 40 is configured to selectively cool each of the liquid materials to a temperature lower than the boiling temperature of its solvent, such as 10° C., when the liquid material is supplied into the nozzle 50 .
- a carrier gas supply line 26 (carrier gas passage) is disposed to extend also through the cooling block 40 .
- the carrier gas supply line 26 is connected to a carrier gas supply section 60 and is provided with a flow rate regulator M 4 and a valve V 13 .
- the vaporizer 200 comprises a container 201 forming a vaporizing chamber, and a nozzle 50 airtightly attached to the opening at the top of the container 201 .
- the liquid material supply line 23 and carrier gas supply line 26 are connected to the nozzle 50 .
- the nozzle 50 is of a spray-type having a double tube structure formed of inner and outer tubes.
- the inner tube discharges a liquid material supplied from the liquid material supply line 23
- the outer tube discharges nitrogen gas (or another inactive gas, such as Ar or He) used as an atomizing gas supplied from the carrier gas supply line 26 .
- nitrogen gas or another inactive gas, such as Ar or He
- Each of the liquid materials is delivered in an atomized state (as mist) into the container 201 from a spray port 50 a (having a hole diameter of, e.g., 0.25 mm) at the distal end of the nozzle 50 .
- the container 201 has an output port 202 formed in the sidewall at a lower position to output a process gas that is vaporized part of the liquid material.
- the container 201 further has a drain port 203 formed in the bottom to discharge non-vaporized part of the liquid material.
- the container 201 includes heaters 204 embedded in the wall and formed of, e.g., resistive heating bodies for heating the interior of the vaporizing chamber.
- the container 201 further includes a lower heat-exchange block 205 disposed on the bottom, which is formed of a cylindrical block and provided with heaters embedded therein.
- the output port 202 is airtightly connected to the process gas supply line (gas supply passage) 30 .
- the drain port 203 is connected to an exhaust pump 80 through a mist discharge line 27 provided with a valve V 14 .
- a temperature detector 206 and a pressure detector 70 are disposed to respectively detect the temperature and pressure inside the container 201 (vaporizing chamber) of the vaporizer 200 .
- a power supply 207 is connected to the heaters 204 and lower heat-exchange block 205 and its supply power is controlled by a control section 90 described later with reference to the detection signal from the temperature detector 206 .
- the process gas supply line 30 is provided with a valve V 15 and a regulator valve (serving as pressure adjusting means) VT 1 .
- the regulator valve VT 1 is used for adjusting the flow rate of the process gas supplied through the process gas supply line 30 .
- the regulator valve VT 1 is controlled by the control section 90 comprising, e.g., a computer disposed in the gas supply apparatus 20 .
- the process gas supply line 30 is connected to the exhaust pump 80 through an exhaust line 28 provided with a valve V 16 .
- the film formation system 1 further includes a main control section 92 formed of, e.g., a computer to control the entire system.
- the main control section 92 can control a film formation process as described below in accordance with process recipes stored in the storage section thereof in advance, with reference to the film thickness and composition of a film to be formed.
- the relationship between the process gas flow rates and the thickness and composition of the film is also stored as control data in advance. Accordingly, the main control section 92 can control the respective components of the film formation processing apparatus 10 and gas supply apparatus 20 , based on the stored process recipes and control data.
- Examples of a storage medium are a magnetic disk (flexible disk, hard disk (a representative of which is a hard disk included in the storage section), etc.), an optical disk (CD, DVD, etc.), a magneto-optical disk (MO, etc.), and a semiconductor memory.
- FIG. 3 is a view for explaining an operation and effect of the regulator valve VT 1 .
- argon (Ar) gas was supplied as a carrier gas at 0.5 slm or 0.3 slm
- a liquid material prepared by dissolving Sr(THD) 2 in THF solvent was supplied at different values of the flow rate.
- the pressure inside the vaporizing chamber of the vaporizer was measured to examine the change of the pressure.
- the line La denotes the pressure inside the vaporizing chamber and the broken line Lb denotes the set flow rate of the liquid material.
- the pressure inside the vaporizing chamber needs to be lower than an upper limit corresponding to a pressure for vaporizing a liquid material. Accordingly, this measurement was performed in light of this fact.
- the flow rate of the liquid material was set at around 1.0 sccm, as shown by the broken line Lb.
- the pressure inside the vaporizing chamber became unstable, as seen in the strenuous pulsating movement of the line La.
- the flow rate of the liquid material was set at 3.0 sccm or more, as shown by the broken line Lb.
- the pressure inside the vaporizing chamber became stable, as seen in the almost flat state of the line La.
- the flow rate of argon gas was decreased to 0.3 slm, and the liquid material was supplied at about 1.0 sccm.
- the pressure inside the vaporizing chamber became unstable, as seen in the strenuous pulsating movement of the line La. This pulsating movement was more active as compared to the case where argon gas was supplied at 0.5 slm and the liquid material was supplied at about 0.5 sccm.
- the film formation system 1 is arranged such that the pressure inside the vaporizing chamber is monitored to detect a decrease in the pressure by the pressure detector 70 . Then, the pressure inside the vaporizing chamber is adjusted by the regulator valve VT 1 to prevent the pressure from becoming unstable with violent fluctuations. For example, a predetermined pressure range may be written in a process recipe, and read out when the process recipe is selected by the main control section 92 .
- the pressure inside the vaporizing chamber may be provided with a predetermined pressure range defined by an upper limit at about 4 kPa (30 Torr), which is lower than the pressure limit value for vaporizing the liquid material, and a lower limit at about 2 kPa (15 Torr), which is higher than the pressure limit value where the inner pressure starts causing violent fluctuations.
- control section 90 reads out a predetermined pressure range from a selected recipe, and compares the pressure detection value obtained by the pressure detector 70 with the predetermined pressure range during the film formation.
- the opening degree of the regulator valve VT 1 is set smaller to decrease the flow rate of the process gas supplied through the process gas supply line 30 .
- the opening degree of the regulator valve VT 1 is set larger by a predetermined amount. Consequently, the process gas decreases its staying amount inside vaporizing chamber to decrease the pressure inside the vaporizing chamber, so as not to exceed the pressure limit value for vaporizing the liquid material.
- the pressure inside the vaporizing chamber is controlled as follows. Specifically, for a predetermined liquid material, a first limit value is obtained at which vaporization of the liquid material starts being inhibited due to an increase in the pressure inside the vaporizing chamber.
- the first limit value may be obtained from experimental data or document data.
- a second limit value is obtained at which vaporization of the liquid material starts being unstable and the pressure inside the vaporizing chamber starts pulsating movement (oscillation known as hunting) due to a decrease in the pressure inside the vaporizing chamber.
- the second limit value is preferably obtained from experimental data.
- a predetermined pressure range is determined such that it is defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.
- the lower limit of the predetermined pressure range is conceived to prevent the solvent of the liquid material from being boiled in the tip of the nozzle thereby causing nozzle clogging and/or spray abnormality.
- the second limit value can be said to be a pressure at which the solvent of the liquid material stars being boiled in the tip of the nozzle due to a decease in the pressure.
- the liquid material is cooled to a predetermined temperature by the cooling block 40 immediately before the nozzle 50 , and so the lower limit of the predetermined pressure range can be preset with reference to the pressure at which the solvent of the liquid material stars being boiled at the predetermined temperature.
- the predetermined pressure range is preferably set to be wider, as long as the supply of the process gas is adversely affected.
- studies were made in relation to liquid materials for forming high-dielectric constant thin film, prepared by dissolving various solid source materials in various solvents. As a result common to such liquid materials, it has been found that presetting the lower limit to be 40% to 60% of the upper limit provides a pressure range that can reliably prevent the hunting while realizing an efficient vaporizing process.
- the predetermined pressure range is stored as, e.g., part of a process recipe in a storage portion from which the main control section 92 reads out data.
- the control section 90 is used to control an operation of the pressure adjusting mechanism (utilizing the regulator valve VT 1 in the first embodiment) with reference to the pressure detection value of the pressure detector 70 to cause the pressure inside the vaporizing chamber to fall within the predetermined pressure range.
- a film formation method performed in the film formation system 1 is performed in the film formation processing apparatus 10 .
- a predetermined number of wafers W are placed on the wafer boat 12 and are loaded into the reaction tube 11 .
- the interior of the reaction tube 11 is stabilized at a predetermined temperature and a predetermined pressure.
- the process gas is supplied into the film formation processing apparatus 10 .
- helium (He) used as a pressurized gas is supplied from the pressurized gas supply source (not shown) into the first storage vessel 21 a , and a liquid material is supplied through the liquid material supply line 23 and cooling block 40 while the flow rate of the liquid material is adjusted by the flow rate regulator M 1 .
- the liquid material is cooled by the cooling block 40 and is then supplied into the nozzle 50 . Further, a carrier gas, such as argon (Ar) gas, is supplied from the carrier gas supply section 60 through the cooling block 40 into the nozzle 50 . Consequently, the liquid material set at a flow rate of, e.g., 5 sccm is sprayed as mist from the nozzle 50 into the vaporizing chamber.
- a carrier gas such as argon (Ar) gas
- the interior of the vaporizing chamber is heated by the heaters 204 and lower heat-exchange block 205 at, e.g., 150° C.
- the liquid material supplied as mist from the nozzle 50 is uniformly atomized and flows through the vaporizing space defined by the lower heat-exchange block 205 and container 201 . Consequently, the liquid material is vaporized by heat exchange inside the container 201 into the process gas, which then flows out through the output port 202 into the process gas supply line 30 .
- mist mixed within the process gas does not change direction, but flows downward due to an inertia force based on its own large weight. Consequently, the mist is separated from the process gas and reaches the bottom of the container 201 .
- the mist is accumulated and agglomerated to change into a liquid phase and is then solidified at the bottom of the container 201 .
- the solidified by-product thus trapped at the bottom of the container 201 is treated in a certain maintenance cycle such that the temperature of the vaporizer 200 is decreased and a solvent is supplied into the container 201 to dissolve the by-product and discharge it from the drain port 203 . Since the drain port 203 is formed at a position lower than the output port 202 , no drainage liquid flows into the output port 202 .
- the process gas is supplied from the vaporizer 200 through the process gas supply line 30 into the film formation processing apparatus 10 .
- the reaction tube 11 is further connected to an ozone gas supply unit (not shown).
- Sr vapor is first supplied from the vaporizer 200 , so that Sr gas molecules are adsorbed on the wafers. Then, supply of the Sr liquid material is stopped, and a purge step of the vaporizer 200 is performed by use of an inactive gas.
- the reaction tube 11 of the film formation section 10 may be vacuum-exhausted.
- O 3 ozone
- Sr gas molecules on the wafers W are oxidized and thereby form an SrO molecular layer.
- supply connection to the vaporizer 200 is switched from the first storage vessel 21 a to the second storage vessel 21 b , and Ti vapor is supplied from the vaporizer 200 , so that Ti gas molecules are adsorbed on the wafers.
- supply of the Ti liquid material is stopped, and a purge step of the vaporizer 200 is performed by use of an inactive gas.
- O 3 (ozone) is supplied from the ozone gas supply unit, so that Ti gas molecules on the wafers W are oxidized and thereby form a TiO molecular layer.
- SrO molecular layers and TiO molecular layers are laminated to form an STO (strontium titanate) film with a predetermined thickness.
- the pressure inside the vaporizing chamber is monitored by the pressure detector 70 .
- the opening degree of the regulator valve VT 1 is set smaller than the initial value by the control section 90 to raise the pressure inside the vaporizing chamber.
- the opening degree of the regulator valve VT 1 is set larger by the control section 90 with a predetermined amount, such as an amount to reach or not to reach the initial value. Consequently, even if the pressure inside the vaporizing chamber is lowered during the film formation process, the pressure is caused to fall within a pressure range for stably vaporizing the liquid material, and so the film formation process can be stably kept performed.
- the interior of the vaporizer 200 and process gas supply line 30 is purged by use of a gas, such as nitrogen gas, to completely remove the liquid materials left inside the vaporizer 200 .
- a cleaning process may be periodically performed inside the vaporizer 200 and supply lines.
- the solvent stored in the third storage vessel 21 c is supplied through the solvent supply line 22 c and connection line 24 into the first source material supply line 22 a and second source material supply line 22 b .
- the solvent is supplied through the liquid material supply line 23 and nozzle 50 into the vaporizer 200 . Consequently, liquid-phase substances and solid-phase substances derived from the liquid materials and deposited inside the supply lines and container 201 are dissolved and washed out by the solvent.
- the solvent used for the cleaning is discharged out of the system through the drain port 203 and mist discharge line 27 .
- the pressure inside the vaporizing chamber of the vaporizer 200 is monitored by the pressure detector 70 .
- the regulator valve VT 1 on the process gas supply line 30 is adjusted to raise the pressure inside the container 201 , so as to prevent vaporization of a liquid material from becoming unstable.
- the film formation system 1 thus arranged can prevent the vaporizing efficiency from being deteriorated due to clogging in the tip of the nozzle 50 and/or spray abnormality, and also can prevent particle contamination from being caused due to an increase in residues.
- a predetermined pressure range can be present in accordance with a process recipe between a lower pressure at which the pressure inside the vaporizing chamber becomes unstable and an upper pressure at which vaporization of the liquid material starts being inhibited, so that feedback control is performed to cause the pressure detection value to fall with the predetermined pressure range.
- FIG. 4 is a structural view schematically showing a semiconductor processing system according to a second embodiment of the present invention.
- the film formation system 101 according to the second embodiment is arranged to control the pressure inside the vaporizing chamber by adjusting the flow rate of the solvent supplied to the liquid material supply line 23 by use of the flow rate regulator (serving as pressure adjusting means) M 3 disposed on the solvent supply line 22 c .
- this arrangement is an alternative to the arrangement of the first embodiment which controls the pressure by use of the regulator valve VT 1 disposed on the process gas supply line 30 .
- the film formation system 101 When the film formation system 101 is normally performs a process, it operates in the same way as the film formation system 1 according to the first embodiment.
- the opening degree of the flow rate regulator M 3 is set at zero so as not to supply the solvent from the solvent supply line 22 c to liquid material supply line 23 .
- a control section 190 reads out a predetermined pressure range from a selected recipe, and compares the pressure detection value obtained by the pressure detector 70 with the predetermined pressure range during the film formation. When the pressure inside the vaporizing chamber is lowered to the lower limit of the predetermined pressure range, the control section 190 controls the flow rate regulator M 3 to start supplying the solvent into the vaporizing chamber while increasing the flow rate of the solvent.
- the flow rate of the process gas flowing out of the vaporizing chamber is unchanged, the flow rate of the solvent supplied into the vaporizing chamber is increased. Consequently, the vaporized solvent prolongs its staying time and is more retained inside vaporizing chamber to increase the pressure inside the vaporizing chamber.
- the opening degree of the flow rate regulator M 3 is set smaller by a predetermined amount, such that it is completely or not completely closed. In other words, an increase in the supply of the solvent is cancelled by the flow rate regulator M 3 . Consequently, the vaporized solvent decreases its staying amount inside vaporizing chamber to decrease the pressure inside the vaporizing chamber, so as not to exceed the pressure limit value for vaporizing the liquid material.
- the flow rate regulator M 3 on the solvent supply line 22 c is adjusted to raise the pressure inside the container 201 , so as to prevent vaporization of a liquid material from becoming unstable.
- the second embodiment can provide the same function and effect as those of the first embodiment.
- FIG. 5 is a structural view schematically showing a semiconductor processing system according to a third embodiment of the present invention.
- the film formation system 1001 according to the third embodiment is arranged to control the pressure inside the vaporizing chamber by adjusting the flow rate of the carrier gas supplied into the vaporizing chamber by use of the flow rate regulator (serving as pressure adjusting means) M 4 disposed on the carrier gas supply line 26 . Accordingly, this arrangement is an alternative to the arrangement of the first embodiment which controls the pressure by use of the regulator valve VT 1 disposed on the process gas supply line 30 .
- the film formation system 1001 When the film formation system 1001 is normally performs a process, it operates in the same way as the film formation system 1 according to the first embodiment.
- the opening degree of the flow rate regulator M 4 is set at 50%, so as to supply the carrier gas from the carrier gas supply line 26 at a small flow rate.
- a control section 1090 reads out a predetermined pressure range from a selected recipe, and compares the pressure detection value obtained by the pressure detector 70 with the predetermined pressure range during the film formation. When the pressure inside the vaporizing chamber is lowered to the lower limit of the predetermined pressure range, the control section 1090 controls the flow rate regulator M 4 to increase the flow rate of the carrier gas into the vaporizing chamber. Thus, while the flow rate of the process gas flowing out of the vaporizing chamber is unchanged, the flow rate of the carrier gas supplied into the vaporizing chamber is increased.
- the carrier gas prolongs its staying time and is more retained inside vaporizing chamber to increase the pressure inside the vaporizing chamber.
- the opening degree of the flow rate regulator M 4 is set smaller by a predetermined amount, such as an amount to reach or not to reach the initial value. In other words, an increase in the supply of the carrier gas is cancelled by the flow rate regulator M 4 . Consequently, the carrier gas decreases its staying amount inside vaporizing chamber to decrease the pressure inside the vaporizing chamber, so as not to exceed the pressure limit value for vaporizing the liquid material.
- the third embodiment when the pressure inside the vaporizing chamber is lowered to the lower limit of the predetermined pressure range, the flow rate regulator M 4 on the carrier gas supply line 26 is adjusted to raise the pressure inside the container 201 , so as to prevent vaporization of a liquid material from becoming unstable.
- the third embodiment can provide the same function and effect as those of the first embodiment.
- the regulator valve VT 1 or flow rate regulator M 3 or M 4 is used to adjust the pressure inside the container 201 .
- flow rate control is performed by the regulator valve VT 1 or flow rate regulator M 3 or M 4 to cause the pressure inside the container 201 to fall within the predetermined pressure range.
- the film formation system 1 , 101 , or 1001 can prevent the pressure inside the container 201 from becoming too low without stopping the film formation process. Further, the system can prevent the vaporizing efficiency from being deteriorated due to clogging in the tip of the nozzle 50 and/or spray abnormality, and also can prevent particle contamination from being caused due to an increase in residues. Consequently, vaporization of the liquid material can be stably performed, so that the film formation process is not interrupted but stably kept performed.
- pressure data transmitted from the pressure detector 70 is used to judge whether abnormality of the pressure inside the container 201 is canceled.
- cancellation of such abnormality can be judged by use of a preset value of a parameter used for adjusting the pressure inside the vaporizing chamber, such as the flow rate of the solvent or carrier gas.
- a preset value of a parameter corresponding to cancellation of abnormality is written in a table readable by the control section, and, when the pressure inside the vaporizing chamber becomes abnormal, the parameter, such as the flow rate of the solvent or carrier gas, is adjusted until the parameter reaches the preset value.
- the film formation is performed by an ALD process.
- film formation may be performed by use of a single liquid material in the process, or film formation may be performed by use of a process gas derived from a mixture of liquid materials.
- the opening degree of the regulator valve VT 1 or flow rate regulator M 3 or M 4 is adjusted by one step by the control section.
- the opening degree of the regulator valve or flow rate regulator may be gradually adjusted to gradually change the flow rate of the process gas, solvent, or carrier gas.
- a one-step change in the opening degree to be made in each step may be predetermined, so that the flow rate is adjusted in accordance with this one-step change.
- the pressure detection value is compared with the predetermined pressure range. If the pressure inside the vaporizing chamber is still out of the predetermined pressure range, the opening degree of the regulator valve or flow rate regulator is further adjusted with the one-step change to adjust the flow rate of the process gas, solvent, or carrier gas.
- the regulator valve VT 1 may be maintained in a state where the flow rate of the process gas is decreased even after the pressure inside the container 201 is adjusted to fall within the predetermined pressure range.
- the regulator valve VT 1 may be opened to return the flow rate of the process gas to the normal state after the pressure inside the container 201 is adjusted to fall within the predetermined pressure range.
- the flow rate regulator M 3 or M 4 may be maintained in a state where the flow rate of the solvent or carrier gas is increased even after the pressure inside the container 201 is adjusted to fall within the predetermined pressure range.
- the flow rate regulator M 3 or M 4 may be retuned to the initial state to return the flow rate of the solvent or carrier gas to the normal state after the pressure inside the container 201 is adjusted to fall within the predetermined pressure range.
- the pressure detector 70 is connected to the vaporizer 200 .
- the pressure detector may be connected to a portion of the process gas supply line 30 upstream from the valve V 15 , as long as it can detect the pressure inside the container 201 .
- helium (He) gas is supplied as a the pressurized gas.
- another inactive gas such as nitrogen (N 2 ) gas or argon (Ar) gas, may be used in place of helium gas.
- the heaters 204 includes two heaters on the output port 202 side and two heaters on the other side opposite to the output port 202 , wherein these heaters 204 are connected to the power supply 207 .
- the number of heaters may be three or less or five or more, as long as they can uniformly heat the inner wall of the vaporizing chamber. Further, for example, heating of the heaters may be controlled by one temperature controller.
- the set of two heaters on the output port side and the set of two heaters on the opposite side may be controlled independently of each other. Alternatively, the four heaters may be controlled independently of each other.
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Also Published As
Publication number | Publication date |
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US9159548B2 (en) | 2015-10-13 |
JP2009170800A (ja) | 2009-07-30 |
CN101488449B (zh) | 2012-05-23 |
US20140080320A1 (en) | 2014-03-20 |
KR20090079819A (ko) | 2009-07-22 |
TWI434364B (zh) | 2014-04-11 |
JP5200551B2 (ja) | 2013-06-05 |
CN101488449A (zh) | 2009-07-22 |
TW200943456A (en) | 2009-10-16 |
KR101103119B1 (ko) | 2012-01-04 |
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