WO2012175334A3 - Verfahren und vorrichtung zum abscheiden - Google Patents

Verfahren und vorrichtung zum abscheiden Download PDF

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Publication number
WO2012175334A3
WO2012175334A3 PCT/EP2012/060645 EP2012060645W WO2012175334A3 WO 2012175334 A3 WO2012175334 A3 WO 2012175334A3 EP 2012060645 W EP2012060645 W EP 2012060645W WO 2012175334 A3 WO2012175334 A3 WO 2012175334A3
Authority
WO
WIPO (PCT)
Prior art keywords
vapour
gas stream
transfer face
heat transfer
produced
Prior art date
Application number
PCT/EP2012/060645
Other languages
English (en)
French (fr)
Other versions
WO2012175334A2 (de
Inventor
Michael Long
Markus Gersdorff
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to KR1020147001649A priority Critical patent/KR101956829B1/ko
Priority to JP2014516262A priority patent/JP5989107B2/ja
Priority to CN201280030857.7A priority patent/CN103620086B/zh
Priority to KR1020187022191A priority patent/KR102035813B1/ko
Publication of WO2012175334A2 publication Critical patent/WO2012175334A2/de
Publication of WO2012175334A3 publication Critical patent/WO2012175334A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Die Erfindung betrifft zunächst ein Verfahren zum Abscheiden einer Schicht aus einem organischen Ausgangsstoff auf einem Substrat (11), wobei der organische Ausgangsstoff als Aerosol in Form von Schwebeteilchen in einen Trägergasstrom in einen Verdampfer (1) gebracht wird, wobei die Schwebeteilchen dort in Kontakt zu einer durch Temperatursteuerung beheizten Wärmeübertragungsfläche (15) treten und nach einer auch von der Temperatur der Wärmeübertragungsfläche (15) abhängigen mittleren Verweildauer verdampfen, wobei der so erzeugte Dampf vom Trägergas als Ausgangsgasstrom aus dem Verdampfer (1) heraus in die Prozesskammer (10) gebracht wird, wo er auf der Oberfläche des Substrates (11), die Schicht bildend kondensiert. Um die zeitlichen Schwankungsraten eines durch Verdampfen eines aerosolerzeugten Dampfes zu vermindern, wird vorgeschlagen, dass die Temperatur der Wärmeübertragungsfläche (15) als Antwort auf eine zeitliche Änderung des Massenflusses des erzeugten Dampfes (c) im Ausgangsgasstrom verändert wird. Des Weiteren betrifft die Erfindung eine Vorrichtung zum Verdampfen von in einem Trägergasstrom transportierten organischen Schwebeteilchen, sowie eine Vorrichtung zum Abscheiden von OLEDs.
PCT/EP2012/060645 2011-06-22 2012-06-06 Verfahren und vorrichtung zum abscheiden von oleds insbesondere verdampfungsvorrichtung dazu WO2012175334A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147001649A KR101956829B1 (ko) 2011-06-22 2012-06-06 증착 방법 및 장치
JP2014516262A JP5989107B2 (ja) 2011-06-22 2012-06-06 有機出発物質の堆積方法、蒸発装置および堆積装置
CN201280030857.7A CN103620086B (zh) 2011-06-22 2012-06-06 沉积方法及装置
KR1020187022191A KR102035813B1 (ko) 2011-06-22 2012-06-06 증착 방법 및 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011051261A DE102011051261A1 (de) 2011-06-22 2011-06-22 Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu
DE102011051261.6 2011-06-22

Publications (2)

Publication Number Publication Date
WO2012175334A2 WO2012175334A2 (de) 2012-12-27
WO2012175334A3 true WO2012175334A3 (de) 2013-04-11

Family

ID=46210260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/060645 WO2012175334A2 (de) 2011-06-22 2012-06-06 Verfahren und vorrichtung zum abscheiden von oleds insbesondere verdampfungsvorrichtung dazu

Country Status (6)

Country Link
JP (1) JP5989107B2 (de)
KR (2) KR101956829B1 (de)
CN (1) CN103620086B (de)
DE (1) DE102011051261A1 (de)
TW (1) TWI572728B (de)
WO (1) WO2012175334A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102484A1 (de) 2014-02-26 2015-08-27 Aixtron Se Verwendung eines QCM-Sensors zur Bestimmung der Dampfkonzentration beim OVPD-Verfahren beziehungsweise in einem OVPD-Beschichtungssystem
DE102014109195A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
DE102014109196A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung zum Erzeugen eines Dampfes aus einem festen oder flüssigen Ausgangsstoff für eine CVD- oder PVD-Einrichtung
DE102014109194A1 (de) 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes für eine CVD- oder PVD-Einrichtung
DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
DE102016100625A1 (de) 2016-01-15 2017-07-20 Aixtron Se Vorrichtung zum Bereitstellen eines Prozessgases in einer Beschichtungseinrichtung
DE102017103047A1 (de) * 2016-11-29 2018-05-30 Aixtron Se Aerosolverdampfer
DE102017106431A1 (de) * 2017-03-24 2018-09-27 Aixtron Se Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung
DE102017112668A1 (de) * 2017-06-08 2018-12-13 Aixtron Se Verfahren zum Abscheiden von OLEDs
DE102017123233A1 (de) * 2017-10-06 2019-04-11 Aixtron Se Vorrichtung und Verfahren zur Erzeugung eines in einem Trägergas transportierten Dampfes
DE102017126126A1 (de) * 2017-11-08 2019-05-09 Aixtron Se Verfahren und Vorrichtung zum Erzeugen eines Dampfes durch die Verwendung von in einem Regelmodus gewonnenen Steuerdaten
DE102020122800A1 (de) 2020-09-01 2022-03-03 Apeva Se Vorrichtung zum Abscheiden von OLED-Schichten mit einer Run-/Vent-Leitung
US11459654B2 (en) * 2020-11-19 2022-10-04 Eugenus, Inc. Liquid precursor injection for thin film deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
WO2007118898A1 (en) * 2006-04-19 2007-10-25 Kemstream Device for introducing, injecting or spraying a mixture of a carrier gas and liquid compounds and method for implementing said device
US20090186479A1 (en) * 2008-01-18 2009-07-23 Tokyo Electron Limited Semiconductor processing system including vaporizer and method for using same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8808098U1 (de) * 1988-06-23 1988-11-10 Balzers Hochvakuum Gmbh, 6200 Wiesbaden, De
US6409839B1 (en) * 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
US6037241A (en) 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
JP2000068055A (ja) * 1998-08-26 2000-03-03 Tdk Corp 有機ｅｌ素子用蒸発源、この有機ｅｌ素子用蒸発源を用いた有機ｅｌ素子の製造装置および製造方法
FR2800754B1 (fr) * 1999-11-08 2003-05-09 Joint Industrial Processors For Electronics Dispositif evaporateur d'une installation de depot chimique en phase vapeur
US7238389B2 (en) * 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
US7501152B2 (en) 2004-09-21 2009-03-10 Eastman Kodak Company Delivering particulate material to a vaporization zone
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
DE102005013875A1 (de) * 2005-03-24 2006-11-02 Creaphys Gmbh Heizeinrichtung, Beschichtungsanlage und Verfahren zur Verdampfung oder Sublimation von Beschichtungsmaterialien
JP4974504B2 (ja) 2005-10-13 2012-07-11 株式会社半導体エネルギー研究所 成膜装置、発光装置の作製方法
DE102006026576A1 (de) 2006-06-06 2008-01-10 Aixtron Ag Vorrichtung und Verfahren zum Aufdampfen eines pulverförmigen organischen Ausgangsstoffs
US8027574B2 (en) 2007-08-06 2011-09-27 Global Oled Technology Llc Vaporization of thermally sensitive materials
DE102008026974A1 (de) * 2008-06-03 2009-12-10 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden dünner Schichten aus polymeren Para-Xylylene oder substituiertem Para-Xylylene
US7972443B2 (en) * 2008-11-14 2011-07-05 Global Oled Technology Llc Metering of particulate material and vaporization thereof
CN102308174B (zh) * 2008-11-28 2015-08-05 福尔克尔·普洛波斯特 生产半导体层和由单质硒和/或单质硫处理的涂层衬底特别是平面衬底的方法
JP2010159448A (ja) * 2009-01-07 2010-07-22 Canon Inc 成膜装置及び成膜方法
WO2010123027A1 (ja) * 2009-04-24 2010-10-28 東京エレクトロン株式会社 蒸着処理装置および蒸着処理方法
KR20110004081A (ko) * 2009-07-07 2011-01-13 삼성모바일디스플레이주식회사 증착 장치용 캐니스터, 이를 이용한 증착 장치 및 증착 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
WO2007118898A1 (en) * 2006-04-19 2007-10-25 Kemstream Device for introducing, injecting or spraying a mixture of a carrier gas and liquid compounds and method for implementing said device
US20090186479A1 (en) * 2008-01-18 2009-07-23 Tokyo Electron Limited Semiconductor processing system including vaporizer and method for using same

Also Published As

Publication number Publication date
KR20140043791A (ko) 2014-04-10
WO2012175334A2 (de) 2012-12-27
TW201305366A (zh) 2013-02-01
CN103620086B (zh) 2017-09-29
DE102011051261A1 (de) 2012-12-27
KR101956829B1 (ko) 2019-03-11
KR20180090391A (ko) 2018-08-10
JP5989107B2 (ja) 2016-09-07
CN103620086A (zh) 2014-03-05
JP2014520210A (ja) 2014-08-21
KR102035813B1 (ko) 2019-10-23
TWI572728B (zh) 2017-03-01

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