WO2012150763A3 - 연속적인 열처리 화학 기상 증착 방법을 이용한 고품질 그래핀 제조 방법 - Google Patents

연속적인 열처리 화학 기상 증착 방법을 이용한 고품질 그래핀 제조 방법 Download PDF

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Publication number
WO2012150763A3
WO2012150763A3 PCT/KR2012/001860 KR2012001860W WO2012150763A3 WO 2012150763 A3 WO2012150763 A3 WO 2012150763A3 KR 2012001860 W KR2012001860 W KR 2012001860W WO 2012150763 A3 WO2012150763 A3 WO 2012150763A3
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WO
WIPO (PCT)
Prior art keywords
heat treatment
continuous heat
graphene
catalyst layer
vapor deposition
Prior art date
Application number
PCT/KR2012/001860
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English (en)
French (fr)
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WO2012150763A2 (ko
Inventor
전석우
이진섭
오세란
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to EP12779850.2A priority Critical patent/EP2706130A4/en
Priority to US14/114,689 priority patent/US20140079623A1/en
Priority to CN201280021749.3A priority patent/CN103502507B/zh
Publication of WO2012150763A2 publication Critical patent/WO2012150763A2/ko
Publication of WO2012150763A3 publication Critical patent/WO2012150763A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

그래핀의 결정립의 크기를 증가시키는 그래핀 제조 방법을 제공한다. 본 발명에 따른 그래핀 제조 방법에서는, 전이금속으로 이루어진 촉매층이 형성된 기판을 챔버 내에 장입한 후, 상기 챔버 내에 기상 탄소 공급원을 공급한다. 상기 촉매층을 국부적으로 가열하되 가열 부위를 이동시키는 연속적인 열처리를 실시하여 상기 촉매층 안에 탄소 성분을 고용시킨 후 고용시킨 탄소 성분으로부터 상기 촉매층 표면에 그래핀을 석출시킨다.
PCT/KR2012/001860 2011-05-03 2012-03-15 연속적인 열처리 화학 기상 증착 방법을 이용한 고품질 그래핀 제조 방법 WO2012150763A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12779850.2A EP2706130A4 (en) 2011-05-03 2012-03-15 PROCESS FOR PRODUCING HIGH-QUALITY GRAPHENE USING CHEMICAL VAPOR DEPOSITION PROCESS WITH CONTINUOUS THERMAL TREATMENT
US14/114,689 US20140079623A1 (en) 2011-05-03 2012-03-15 Method of forming high-quality graphene using continuous heat treatment chemical vapor deposition
CN201280021749.3A CN103502507B (zh) 2011-05-03 2012-03-15 使用连续热处理化学气相沉积法制造高质量石墨烯的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0041877 2011-05-03
KR20110041877 2011-05-03

Publications (2)

Publication Number Publication Date
WO2012150763A2 WO2012150763A2 (ko) 2012-11-08
WO2012150763A3 true WO2012150763A3 (ko) 2013-01-03

Family

ID=47107929

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/KR2012/001451 WO2012150761A1 (ko) 2011-05-03 2012-02-27 그래핀의 제조 방법 및 그래핀의 제조 장치
PCT/KR2012/001860 WO2012150763A2 (ko) 2011-05-03 2012-03-15 연속적인 열처리 화학 기상 증착 방법을 이용한 고품질 그래핀 제조 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001451 WO2012150761A1 (ko) 2011-05-03 2012-02-27 그래핀의 제조 방법 및 그래핀의 제조 장치

Country Status (5)

Country Link
US (1) US20140079623A1 (ko)
EP (1) EP2706130A4 (ko)
KR (1) KR101332796B1 (ko)
CN (1) CN103502507B (ko)
WO (2) WO2012150761A1 (ko)

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US8652946B2 (en) 2012-04-16 2014-02-18 Uchicago Argonne, Llc. Graphene layer formation on a carbon based substrate
KR101308120B1 (ko) * 2012-02-01 2013-09-12 서울대학교산학협력단 성장 방향이 제어된 그래핀의 제조 방법
US9875894B2 (en) * 2012-04-16 2018-01-23 Uchicago Argonne, Llc Graphene layer formation at low substrate temperature on a metal and carbon based substrate
KR101956135B1 (ko) * 2012-12-26 2019-03-11 재단법인 포항산업과학연구원 그래핀 합성장치 및 그래핀 합성 방법
US9242865B2 (en) 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
WO2014182697A1 (en) * 2013-05-08 2014-11-13 The University Of Houston System Methods for the synthesis of arrays of thin crystal grains of layered semiconductors sns2 and sns at designed locations
KR102129553B1 (ko) * 2013-06-24 2020-07-02 삼성전자주식회사 단일 결정 그래핀 필름 제조방법
KR101562906B1 (ko) * 2014-02-24 2015-10-26 한국과학기술원 기체상의 금속 촉매를 이용한 전사 공정이 생략된 그래핀의 제조 방법
CN105019030B (zh) * 2014-04-28 2019-01-08 中国科学院物理研究所 石墨烯/六方氮化硼的高度晶向匹配堆叠结构及其制备方法
CN105088335B (zh) * 2014-05-09 2018-01-05 理想能源设备(上海)有限公司 一种生长石墨烯薄膜的装置及其生长方法
KR101720168B1 (ko) 2015-06-30 2017-04-03 연세대학교 산학협력단 도전층의 결함 치유 방법, 금속-탄소 복합층 형성 방법, 이차원 나노소재, 투명전극 및 이의 제조 방법
JP6144300B2 (ja) * 2015-07-16 2017-06-07 東京エレクトロン株式会社 グラフェン製造方法、グラフェン製造装置及びグラフェン製造システム
CN105923623A (zh) * 2016-04-19 2016-09-07 广西大学 一种三维多级孔结构的石墨烯粉体的制备方法
CN111836681A (zh) * 2018-03-09 2020-10-27 Asml荷兰有限公司 石墨烯表膜光刻设备
CN108545725B (zh) * 2018-05-14 2021-07-09 南京航空航天大学 一种石墨烯制备装置及应用该装置图案化生长石墨烯的方法
US10285218B1 (en) * 2018-05-14 2019-05-07 The Florida International University Board Of Trustees Direct and selective area synthesis of graphene using microheater elements
EP3894353A1 (en) * 2019-03-18 2021-10-20 The 280 Company System and process for manufacturing a graphene layer on a substrate

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Also Published As

Publication number Publication date
WO2012150763A2 (ko) 2012-11-08
KR20120125155A (ko) 2012-11-14
CN103502507B (zh) 2015-08-12
KR101332796B1 (ko) 2013-11-25
US20140079623A1 (en) 2014-03-20
WO2012150761A1 (ko) 2012-11-08
EP2706130A2 (en) 2014-03-12
EP2706130A4 (en) 2014-10-29
CN103502507A (zh) 2014-01-08

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