TWI591693B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI591693B
TWI591693B TW103102781A TW103102781A TWI591693B TW I591693 B TWI591693 B TW I591693B TW 103102781 A TW103102781 A TW 103102781A TW 103102781 A TW103102781 A TW 103102781A TW I591693 B TWI591693 B TW I591693B
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TW
Taiwan
Prior art keywords
film
insulating film
metal
gate
laminated
Prior art date
Application number
TW103102781A
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English (en)
Chinese (zh)
Other versions
TW201430921A (zh
Inventor
佃榮次
片山弘造
園田賢一郎
國清辰也
Original Assignee
瑞薩電子股份有限公司
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Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW201430921A publication Critical patent/TW201430921A/zh
Application granted granted Critical
Publication of TWI591693B publication Critical patent/TWI591693B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H10P14/40—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103102781A 2013-01-25 2014-01-24 半導體裝置之製造方法 TWI591693B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013011820A JP6029989B2 (ja) 2013-01-25 2013-01-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201430921A TW201430921A (zh) 2014-08-01
TWI591693B true TWI591693B (zh) 2017-07-11

Family

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Family Applications (2)

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TW103102781A TWI591693B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法
TW106110282A TWI623028B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法

Family Applications After (1)

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TW106110282A TWI623028B (zh) 2013-01-25 2014-01-24 半導體裝置之製造方法

Country Status (6)

Country Link
US (3) US8956941B2 (enExample)
EP (1) EP2760048B1 (enExample)
JP (1) JP6029989B2 (enExample)
KR (1) KR20140095986A (enExample)
CN (2) CN103972177B (enExample)
TW (2) TWI591693B (enExample)

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JP4594973B2 (ja) * 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
JP6026914B2 (ja) 2013-02-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9390927B2 (en) * 2013-08-16 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation for split gate flash memory
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
US9379222B2 (en) * 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
US9257445B2 (en) * 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
JP2016039329A (ja) * 2014-08-08 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6359386B2 (ja) * 2014-08-28 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR101878114B1 (ko) * 2015-01-23 2018-07-12 실리콘 스토리지 테크놀로지 인크 금속 게이트들 및 로직 디바이스들을 갖는 자가 정렬된 분리형 게이트 메모리 셀 어레이를 형성하는 방법
JP6440507B2 (ja) * 2015-01-27 2018-12-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN106158637B (zh) * 2015-03-31 2019-04-26 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN106158638B (zh) * 2015-04-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
JP5956033B1 (ja) * 2015-07-23 2016-07-20 株式会社フローディア メモリセル、半導体集積回路装置、および半導体集積回路装置の製造方法
JP6556567B2 (ja) * 2015-09-09 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6069569B1 (ja) * 2016-08-24 2017-02-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
EP4071787B1 (en) 2015-12-18 2023-09-27 Floadia Corporation Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
JP6620046B2 (ja) * 2016-03-15 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9934826B2 (en) * 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6750994B2 (ja) * 2016-09-29 2020-09-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
US10672893B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making semiconductor device comprising flash memory and resulting device
JP2019102560A (ja) * 2017-11-30 2019-06-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020035802A (ja) * 2018-08-27 2020-03-05 キオクシア株式会社 半導体記憶装置
CN111129020A (zh) * 2019-12-27 2020-05-08 华虹半导体(无锡)有限公司 闪存器件的制作方法
EP4177934B1 (en) 2021-07-27 2025-04-02 Changxin Memory Technologies, Inc. Semiconductor structure preparation method, semiconductor structure, and semiconductor memory
CN116131094B (zh) * 2021-11-12 2025-12-05 朗美通日本株式会社 光学半导体器件

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JP5142501B2 (ja) * 2006-08-25 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2009059927A (ja) * 2007-08-31 2009-03-19 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法
JP2009224425A (ja) * 2008-03-14 2009-10-01 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
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JP5417440B2 (ja) * 2009-05-28 2014-02-12 トヨタ自動車株式会社 半導体装置
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JP5613506B2 (ja) * 2009-10-28 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5538838B2 (ja) * 2009-11-25 2014-07-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US8722493B2 (en) * 2012-04-09 2014-05-13 Freescale Semiconductor, Inc. Logic transistor and non-volatile memory cell integration

Also Published As

Publication number Publication date
CN108461395B (zh) 2022-08-23
TWI623028B (zh) 2018-05-01
JP6029989B2 (ja) 2016-11-24
US20160093716A1 (en) 2016-03-31
KR20140095986A (ko) 2014-08-04
US20150111357A1 (en) 2015-04-23
CN108461395A (zh) 2018-08-28
CN103972177A (zh) 2014-08-06
TW201724221A (zh) 2017-07-01
US20140213030A1 (en) 2014-07-31
EP2760048A3 (en) 2016-08-10
TW201430921A (zh) 2014-08-01
EP2760048A2 (en) 2014-07-30
JP2014143339A (ja) 2014-08-07
US8956941B2 (en) 2015-02-17
CN103972177B (zh) 2018-03-30
EP2760048B1 (en) 2017-09-06
US9184264B2 (en) 2015-11-10

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