TWI550879B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI550879B TWI550879B TW104127157A TW104127157A TWI550879B TW I550879 B TWI550879 B TW I550879B TW 104127157 A TW104127157 A TW 104127157A TW 104127157 A TW104127157 A TW 104127157A TW I550879 B TWI550879 B TW I550879B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- oxide semiconductor
- oxygen
- insulating film
- semiconductor film
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
- H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
Landscapes
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010100201 | 2010-04-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201545361A TW201545361A (zh) | 2015-12-01 |
| TWI550879B true TWI550879B (zh) | 2016-09-21 |
Family
ID=44816145
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104127157A TWI550879B (zh) | 2010-04-23 | 2011-04-21 | 半導體裝置的製造方法 |
| TW100113910A TWI508302B (zh) | 2010-04-23 | 2011-04-21 | 半導體裝置的製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100113910A TWI508302B (zh) | 2010-04-23 | 2011-04-21 | 半導體裝置的製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8865534B2 (https=) |
| JP (6) | JP5871359B2 (https=) |
| KR (2) | KR101826831B1 (https=) |
| CN (2) | CN106057907B (https=) |
| DE (1) | DE112011101410B4 (https=) |
| TW (2) | TWI550879B (https=) |
| WO (1) | WO2011132556A1 (https=) |
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| WO2011001822A1 (en) * | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011132529A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011132548A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011132625A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| CN106057907B (zh) * | 2010-04-23 | 2019-10-22 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| WO2011132591A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011132590A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011142467A1 (en) | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9496405B2 (en) | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
| WO2011145538A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| WO2011145467A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101350751B1 (ko) | 2010-07-01 | 2014-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동 방법 |
| CN105931967B (zh) | 2011-04-27 | 2019-05-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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| JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| JP6059968B2 (ja) * | 2011-11-25 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び液晶表示装置 |
| JP6125211B2 (ja) * | 2011-11-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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| JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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| KR102914910B1 (ko) | 2018-10-26 | 2026-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제작 방법, 반도체 장치의 제작 방법 |
| CN112635570B (zh) | 2019-09-24 | 2023-01-10 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管及其制备方法、阵列基板 |
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- 2011-04-21 JP JP2011094895A patent/JP5871359B2/ja active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| DE112011101410B4 (de) | 2018-03-01 |
| JP2012248860A (ja) | 2012-12-13 |
| JP5871359B2 (ja) | 2016-03-01 |
| TWI508302B (zh) | 2015-11-11 |
| JP5608715B2 (ja) | 2014-10-15 |
| JP6054556B2 (ja) | 2016-12-27 |
| US20110263082A1 (en) | 2011-10-27 |
| CN106057907A (zh) | 2016-10-26 |
| US8865534B2 (en) | 2014-10-21 |
| JP6488271B2 (ja) | 2019-03-20 |
| JP2011243971A (ja) | 2011-12-01 |
| CN102859704A (zh) | 2013-01-02 |
| TW201545361A (zh) | 2015-12-01 |
| CN102859704B (zh) | 2016-08-03 |
| CN106057907B (zh) | 2019-10-22 |
| US9147754B2 (en) | 2015-09-29 |
| JP2016106408A (ja) | 2016-06-16 |
| US20150093854A1 (en) | 2015-04-02 |
| JP2014195103A (ja) | 2014-10-09 |
| TW201214712A (en) | 2012-04-01 |
| KR101324760B1 (ko) | 2013-11-05 |
| JP5084971B1 (ja) | 2012-11-28 |
| JP2017050567A (ja) | 2017-03-09 |
| DE112011101410T5 (de) | 2013-04-25 |
| JP5801923B2 (ja) | 2015-10-28 |
| WO2011132556A1 (en) | 2011-10-27 |
| KR20130048275A (ko) | 2013-05-09 |
| JP2013030785A (ja) | 2013-02-07 |
| KR20130055609A (ko) | 2013-05-28 |
| KR101826831B1 (ko) | 2018-02-07 |
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