TWI485805B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI485805B TWI485805B TW097122676A TW97122676A TWI485805B TW I485805 B TWI485805 B TW I485805B TW 097122676 A TW097122676 A TW 097122676A TW 97122676 A TW97122676 A TW 97122676A TW I485805 B TWI485805 B TW I485805B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- substrate
- region
- ions
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 517
- 238000004519 manufacturing process Methods 0.000 title claims description 84
- 239000000758 substrate Substances 0.000 claims description 395
- 150000002500 ions Chemical class 0.000 claims description 203
- 238000005247 gettering Methods 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 102
- 238000010438 heat treatment Methods 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000012535 impurity Substances 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 51
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
- 229910052698 phosphorus Inorganic materials 0.000 claims description 35
- 239000011574 phosphorus Substances 0.000 claims description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 27
- 229910052785 arsenic Inorganic materials 0.000 claims description 21
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 21
- 230000001678 irradiating effect Effects 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 238000004151 rapid thermal annealing Methods 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000005407 aluminoborosilicate glass Substances 0.000 claims description 2
- 239000005354 aluminosilicate glass Substances 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- VTYDSHHBXXPBBQ-UHFFFAOYSA-N boron germanium Chemical compound [B].[Ge] VTYDSHHBXXPBBQ-UHFFFAOYSA-N 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 322
- 239000010408 film Substances 0.000 description 172
- 125000004429 atom Chemical group 0.000 description 45
- 230000015572 biosynthetic process Effects 0.000 description 34
- 229910052735 hafnium Inorganic materials 0.000 description 29
- 239000001257 hydrogen Substances 0.000 description 29
- 238000000926 separation method Methods 0.000 description 29
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 28
- 238000011282 treatment Methods 0.000 description 25
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 20
- 229910052707 ruthenium Inorganic materials 0.000 description 20
- 238000011109 contamination Methods 0.000 description 18
- -1 hydrogen ions Chemical class 0.000 description 17
- 238000010884 ion-beam technique Methods 0.000 description 17
- 239000013078 crystal Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 238000009413 insulation Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052727 yttrium Inorganic materials 0.000 description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- AGGJWJFEEKIYOF-UHFFFAOYSA-N 1,1,1-triethoxydecane Chemical compound CCCCCCCCCC(OCC)(OCC)OCC AGGJWJFEEKIYOF-UHFFFAOYSA-N 0.000 description 1
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- QDKSGHXRHXVMPF-UHFFFAOYSA-N 2,2-dimethylundecane Chemical compound CCCCCCCCCC(C)(C)C QDKSGHXRHXVMPF-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- BTYUGHWCEFRRRF-UHFFFAOYSA-N [As].[K] Chemical compound [As].[K] BTYUGHWCEFRRRF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- BEJRNLMOMBGWFU-UHFFFAOYSA-N bismuth boron Chemical compound [B].[Bi] BEJRNLMOMBGWFU-UHFFFAOYSA-N 0.000 description 1
- YISOXLVRWFDIKD-UHFFFAOYSA-N bismuth;borate Chemical compound [Bi+3].[O-]B([O-])[O-] YISOXLVRWFDIKD-UHFFFAOYSA-N 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000008774 maternal effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007162464 | 2007-06-20 | ||
| JP2007162444 | 2007-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200917416A TW200917416A (en) | 2009-04-16 |
| TWI485805B true TWI485805B (zh) | 2015-05-21 |
Family
ID=40136912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097122676A TWI485805B (zh) | 2007-06-20 | 2008-06-18 | 半導體裝置的製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8093135B2 (enExample) |
| JP (1) | JP5383098B2 (enExample) |
| KR (1) | KR101478813B1 (enExample) |
| CN (2) | CN101681843B (enExample) |
| SG (1) | SG182214A1 (enExample) |
| TW (1) | TWI485805B (enExample) |
| WO (1) | WO2008156040A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Ｓｕｍｃｏ | 貼合せｓｏｉウェーハの製造方法 |
| WO2008132904A1 (en) * | 2007-04-13 | 2008-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Photovoltaic device and method for manufacturing the same |
| US7795111B2 (en) * | 2007-06-27 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| WO2009001836A1 (en) * | 2007-06-28 | 2008-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8431451B2 (en) | 2007-06-29 | 2013-04-30 | Semicondutor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| JP5507063B2 (ja) | 2007-07-09 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5452900B2 (ja) * | 2007-09-21 | 2014-03-26 | 株式会社半導体エネルギー研究所 | 半導体膜付き基板の作製方法 |
| US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP2009135453A (ja) * | 2007-10-30 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法、半導体装置及び電子機器 |
| JP2010153802A (ja) * | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US8299537B2 (en) | 2009-02-11 | 2012-10-30 | International Business Machines Corporation | Semiconductor-on-insulator substrate and structure including multiple order radio frequency harmonic supressing region |
| CN102576735B (zh) * | 2009-09-30 | 2016-01-20 | 大日本印刷株式会社 | 挠性装置用基板、挠性装置用薄膜晶体管基板、挠性装置、薄膜元件用基板、薄膜元件、薄膜晶体管、薄膜元件用基板的制造方法、薄膜元件的制造方法及薄膜晶体管的制造方法 |
| US8288249B2 (en) * | 2010-01-26 | 2012-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| US8461017B2 (en) | 2010-07-19 | 2013-06-11 | Soitec | Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region |
| US8835955B2 (en) * | 2010-11-01 | 2014-09-16 | Translucent, Inc. | IIIOxNy on single crystal SOI substrate and III n growth platform |
| JP6016532B2 (ja) | 2011-09-07 | 2016-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN103137537B (zh) * | 2011-11-28 | 2015-04-15 | 中国科学院上海微系统与信息技术研究所 | 一种图形化全耗尽绝缘体上Si/CoSi2衬底材料及其制备方法 |
| US9178042B2 (en) * | 2013-01-08 | 2015-11-03 | Globalfoundries Inc | Crystalline thin-film transistor |
| US9577110B2 (en) | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
| JP6524862B2 (ja) * | 2015-08-27 | 2019-06-05 | 株式会社Sumco | Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ |
| JP6471650B2 (ja) * | 2015-08-27 | 2019-02-20 | 株式会社Sumco | Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ |
| WO2017116905A1 (en) * | 2015-12-30 | 2017-07-06 | Mattson Technology, Inc. | Gas flow control for millisecond anneal system |
| US9966301B2 (en) * | 2016-06-27 | 2018-05-08 | New Fab, LLC | Reduced substrate effects in monolithically integrated RF circuits |
| JP2019054153A (ja) * | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
| JP6680378B2 (ja) * | 2019-03-13 | 2020-04-15 | 株式会社Sumco | Ｓｏｉウェーハ |
| US11030426B2 (en) * | 2019-10-24 | 2021-06-08 | Asianlink Technology Incorporation | Electronic book for detecting page codes by using wireless radio-frequency technology |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000106424A (ja) * | 1998-07-29 | 2000-04-11 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP2001035787A (ja) * | 1998-07-15 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 結晶性半導体薄膜及びその作製方法並びに半導体装置及びその作製方法 |
| JP2002184695A (ja) * | 2000-12-19 | 2002-06-28 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法並びに半導体装置 |
| JP2002343799A (ja) * | 2001-05-17 | 2002-11-29 | Nec Corp | Ｓｏｉ基板及び半導体装置の製造方法 |
| JP2003282885A (ja) * | 2002-03-26 | 2003-10-03 | Sharp Corp | 半導体装置およびその製造方法 |
| JP2004087606A (ja) * | 2002-08-23 | 2004-03-18 | Sharp Corp | Ｓｏｉ基板およびそれを用いる表示装置ならびにｓｏｉ基板の製造方法 |
| TWI226674B (en) * | 1998-05-15 | 2005-01-11 | Siemens Ag | SOI-semiconductor arrangement and its production method |
| TWI235486B (en) * | 2002-03-26 | 2005-07-01 | Sharp Kk | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| TW200529422A (en) * | 2003-12-05 | 2005-09-01 | Ibm | Method of fabricating strained SSOI wafers |
| JP2005252244A (ja) * | 2004-02-03 | 2005-09-15 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体基板の製造方法 |
| US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| US20070108510A1 (en) * | 1998-07-29 | 2007-05-17 | Takeshi Fukunaga | Process for production of SOI substrate and process for production of semiconductor device |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267950A (ja) * | 1989-04-07 | 1990-11-01 | Sony Corp | 半導体基板 |
| JP2564935B2 (ja) * | 1989-04-20 | 1996-12-18 | 三菱電機株式会社 | 半導体装置 |
| US5753560A (en) * | 1996-10-31 | 1998-05-19 | Motorola, Inc. | Method for fabricating a semiconductor device using lateral gettering |
| JP3976828B2 (ja) * | 1997-02-17 | 2007-09-19 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法 |
| US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
| JP3844566B2 (ja) * | 1997-07-30 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6369410B1 (en) * | 1997-12-15 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| US6503321B2 (en) * | 1998-02-17 | 2003-01-07 | The Trustees Of Columbia University In The City Of New York | Slicing of single-crystal films using ion implantation |
| CN1241803A (zh) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | 半导体衬底、半导体薄膜以及多层结构的制造工艺 |
| JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
| JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| US7153729B1 (en) * | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| US6380007B1 (en) * | 1998-12-28 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP4066574B2 (ja) * | 1999-03-04 | 2008-03-26 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
| US7232742B1 (en) * | 1999-11-26 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film |
| US6821827B2 (en) * | 1999-12-28 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US7141822B2 (en) * | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP4993810B2 (ja) * | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5088993B2 (ja) * | 2001-02-16 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7052943B2 (en) * | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6743700B2 (en) * | 2001-06-01 | 2004-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device and method of their production |
| TW541584B (en) * | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
| FR2835097B1 (fr) * | 2002-01-23 | 2005-10-14 | Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil | |
| JP4289837B2 (ja) * | 2002-07-15 | 2009-07-01 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法及びｓｏｉウエハの製造方法 |
| JP4509488B2 (ja) * | 2003-04-02 | 2010-07-21 | 株式会社Sumco | 貼り合わせ基板の製造方法 |
| US6992025B2 (en) * | 2004-01-12 | 2006-01-31 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
| WO2006064772A1 (ja) * | 2004-12-13 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | プラズマドーピング方法 |
-
2008
- 2008-06-10 CN CN2008800205733A patent/CN101681843B/zh not_active Expired - Fee Related
- 2008-06-10 WO PCT/JP2008/060928 patent/WO2008156040A1/en not_active Ceased
- 2008-06-10 SG SG2012045472A patent/SG182214A1/en unknown
- 2008-06-10 KR KR1020107001224A patent/KR101478813B1/ko not_active Expired - Fee Related
- 2008-06-10 CN CN201210057692.4A patent/CN102592977B/zh not_active Expired - Fee Related
- 2008-06-17 US US12/140,705 patent/US8093135B2/en not_active Expired - Fee Related
- 2008-06-18 TW TW097122676A patent/TWI485805B/zh not_active IP Right Cessation
- 2008-06-19 JP JP2008159876A patent/JP5383098B2/ja not_active Expired - Fee Related
-
2011
- 2011-01-21 US US13/011,046 patent/US8551828B2/en not_active Expired - Fee Related
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI226674B (en) * | 1998-05-15 | 2005-01-11 | Siemens Ag | SOI-semiconductor arrangement and its production method |
| JP2001035787A (ja) * | 1998-07-15 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 結晶性半導体薄膜及びその作製方法並びに半導体装置及びその作製方法 |
| JP2000106424A (ja) * | 1998-07-29 | 2000-04-11 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| US20070108510A1 (en) * | 1998-07-29 | 2007-05-17 | Takeshi Fukunaga | Process for production of SOI substrate and process for production of semiconductor device |
| JP2002184695A (ja) * | 2000-12-19 | 2002-06-28 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法並びに半導体装置 |
| US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| JP2002343799A (ja) * | 2001-05-17 | 2002-11-29 | Nec Corp | Ｓｏｉ基板及び半導体装置の製造方法 |
| JP2003282885A (ja) * | 2002-03-26 | 2003-10-03 | Sharp Corp | 半導体装置およびその製造方法 |
| TWI235486B (en) * | 2002-03-26 | 2005-07-01 | Sharp Kk | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| JP2004087606A (ja) * | 2002-08-23 | 2004-03-18 | Sharp Corp | Ｓｏｉ基板およびそれを用いる表示装置ならびにｓｏｉ基板の製造方法 |
| TW200529422A (en) * | 2003-12-05 | 2005-09-01 | Ibm | Method of fabricating strained SSOI wafers |
| JP2005252244A (ja) * | 2004-02-03 | 2005-09-15 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101681843B (zh) | 2012-05-09 |
| SG182214A1 (en) | 2012-07-30 |
| CN101681843A (zh) | 2010-03-24 |
| KR20100033408A (ko) | 2010-03-29 |
| CN102592977B (zh) | 2015-03-25 |
| KR101478813B1 (ko) | 2015-01-02 |
| JP2009027156A (ja) | 2009-02-05 |
| WO2008156040A1 (en) | 2008-12-24 |
| TW200917416A (en) | 2009-04-16 |
| CN102592977A (zh) | 2012-07-18 |
| US8551828B2 (en) | 2013-10-08 |
| JP5383098B2 (ja) | 2014-01-08 |
| US20110117708A1 (en) | 2011-05-19 |
| US8093135B2 (en) | 2012-01-10 |
| US20080318367A1 (en) | 2008-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI485805B (zh) | 半導體裝置的製造方法 | |
| JP5478789B2 (ja) | Ｓｏｉ基板の作製方法 | |
| TWI478280B (zh) | Ｓｏｉ基板的製造方法、和半導體裝置的製造方法 | |
| TWI437696B (zh) | 半導體裝置及其製造方法 | |
| KR101561855B1 (ko) | Ｓｏｉ기판의 제작방법 | |
| TWI469330B (zh) | 半導體裝置及電子設備 | |
| KR101400699B1 (ko) | 반도체 기판 및 반도체 장치 및 그 제조 방법 | |
| TWI470682B (zh) | 設置有半導體膜的基底及其製造方法 | |
| TWI470735B (zh) | 絕緣層上覆矽（ｓｏｉ）基板之製造方法 | |
| TWI494974B (zh) | Ｓｏｉ基板的製造方法 | |
| US8884371B2 (en) | SOI substrate and manufacturing method thereof | |
| KR20080100120A (ko) | 반도체 장치의 제작 방법 | |
| JP2010147313A (ja) | Ｓｏｉ基板の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |