CN101681843B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN101681843B
CN101681843B CN2008800205733A CN200880020573A CN101681843B CN 101681843 B CN101681843 B CN 101681843B CN 2008800205733 A CN2008800205733 A CN 2008800205733A CN 200880020573 A CN200880020573 A CN 200880020573A CN 101681843 B CN101681843 B CN 101681843B
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China
Prior art keywords
semiconductor
substrate
semiconductor layer
manufacturing approach
semiconductor device
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Expired - Fee Related
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CN2008800205733A
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English (en)
Chinese (zh)
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CN101681843A (zh
Inventor
下村明久
宫入秀和
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101681843A publication Critical patent/CN101681843A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN2008800205733A 2007-06-20 2008-06-10 半导体装置的制造方法 Expired - Fee Related CN101681843B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007162444 2007-06-20
JP2007162464 2007-06-20
JP162444/2007 2007-06-20
JP162464/2007 2007-06-20
PCT/JP2008/060928 WO2008156040A1 (en) 2007-06-20 2008-06-10 Method of manufacturing semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210057692.4A Division CN102592977B (zh) 2007-06-20 2008-06-10 半导体装置的制造方法

Publications (2)

Publication Number Publication Date
CN101681843A CN101681843A (zh) 2010-03-24
CN101681843B true CN101681843B (zh) 2012-05-09

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CN2008800205733A Expired - Fee Related CN101681843B (zh) 2007-06-20 2008-06-10 半导体装置的制造方法
CN201210057692.4A Expired - Fee Related CN102592977B (zh) 2007-06-20 2008-06-10 半导体装置的制造方法

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US (2) US8093135B2 (enExample)
JP (1) JP5383098B2 (enExample)
KR (1) KR101478813B1 (enExample)
CN (2) CN101681843B (enExample)
SG (1) SG182214A1 (enExample)
TW (1) TWI485805B (enExample)
WO (1) WO2008156040A1 (enExample)

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US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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US9178042B2 (en) * 2013-01-08 2015-11-03 Globalfoundries Inc Crystalline thin-film transistor
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JP6471650B2 (ja) * 2015-08-27 2019-02-20 株式会社Sumco Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
US9966301B2 (en) * 2016-06-27 2018-05-08 New Fab, LLC Reduced substrate effects in monolithically integrated RF circuits
JP2019054153A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
JP5383098B2 (ja) 2014-01-08
TW200917416A (en) 2009-04-16
WO2008156040A1 (en) 2008-12-24
SG182214A1 (en) 2012-07-30
US8551828B2 (en) 2013-10-08
US20110117708A1 (en) 2011-05-19
KR101478813B1 (ko) 2015-01-02
TWI485805B (zh) 2015-05-21
CN102592977A (zh) 2012-07-18
KR20100033408A (ko) 2010-03-29
US8093135B2 (en) 2012-01-10
US20080318367A1 (en) 2008-12-25
CN102592977B (zh) 2015-03-25
CN101681843A (zh) 2010-03-24
JP2009027156A (ja) 2009-02-05

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