TWI482270B - 積體電路上具有多種功能之垂直波導 - Google Patents
積體電路上具有多種功能之垂直波導 Download PDFInfo
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- TWI482270B TWI482270B TW098138687A TW98138687A TWI482270B TW I482270 B TWI482270 B TW I482270B TW 098138687 A TW098138687 A TW 098138687A TW 98138687 A TW98138687 A TW 98138687A TW I482270 B TWI482270 B TW I482270B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/1013—Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0425—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using optical fibers
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- G02B6/102—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type for infrared and ultraviolet radiation
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- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- G—PHYSICS
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Description
實施例係關於一種積體電路製造,更特定而言係關於光偵測裝置,例如由一奈米線構成之一光電二極體(PD)。
一影像感測器具有呈一笛卡爾(正方形)柵格之大量相同感測器元件(像素),一般而言大於100萬。毗鄰像素之間的距離稱為間距(p)。一像素之面積係p2
。光敏元件之面積(亦即,像素之對光敏感以轉換為一電信號之面積)通常僅係像素之表面積之約20%至30%。
對一設計者之挑戰係將盡可能多的撞擊於像素上之光以通道方式傳輸至像素之光敏元件。存在減少到達光敏元件之光之量之若干因素。一個因素係構造影像感測器之方式。當今,主要類型之光電二極體(PD)係依靠藉由在結晶矽之頂部上蝕刻及沈積若干矽氧化物、金屬及氮化物層之一製程之一平面技術。PN接面係在賦予一裝置以一基本上水平之定向之一基板上構造為複數個層。光偵測即發生於此等層之一子組中。
表I中列舉且圖1中顯示一典型感測器之層。
在表I中,通常一矽基板上之第一層係ILD層且最頂層係覆蓋層。在表I中,ILD係指一層間介電層;金屬1、金屬2及金屬3係指不同金屬層;IMD1B、IMD2B及IMD5B係指不同金屬間介電層(其等係間隔件層);PASS1、PASS2及PASS3係指不同鈍化層(通常係介電層)。
在影像感測器之矽基板上面之該等層之總厚度係影像感測器之堆疊高度且係個別層之厚度之總和。在表I之實例中,個別層之厚度之總和係約11.6微米(μm)。
在一像素之光敏元件上面之空間必須係透光以允許來自一全色彩場景之入射光撞擊於位於矽基板中之光敏元件上。因此,並不跨越一像素之光敏元件選路金屬層,而是使直接在光敏元件上面之層透明。
像素間距與堆疊高度比率(p/s)確定可被像素接受且可被輸送至矽上之光敏元件之光錐(F數目)。隨著像素變得更小且堆疊高度增加,此數目減少,藉此降低像素之效率。
更重要地,具有更大數目金屬層之增加之堆疊高度遮蔽光使其不能透射穿過該堆疊而到達光敏元件,尤其係以一角度撞擊感測器元件之射線。一個解決方案係使堆疊高度減小一顯著量(亦即,>2μm)。然而,此解決方案在一標準平面製程中難以達成。
另一問題(其可能係最限制習用影像感測器之效能之一個問題)係,少於撞擊於影像感測器上之光之約三分之一透射至例如一光電二極體之光敏元件。在習用影像感測器中,為區別光之三種組成以使得可再現來自一全色彩場景之色彩,使用一濾光片針對每一像素濾掉光之組成中之兩種組成。舉例而言,紅色像素具有吸收綠色光及藍色光之一濾光片,從而僅允許紅色光通過到達感測器。
奈米級技術且特定而言產生納米線之能力之開發已開創以平面技術中不可能之方式設計結構及組合材料之可能性。此開發之一個基礎係,一奈米線之材料性質使得克服在一影像感測器之每一光電二極體上放置一濾色片之要求及顯著增加撞擊於影像感測器上之所有光之收集成為可能。
矽之奈米線可生長於矽上而無缺陷。在Samuelson等人之美國20040075464中揭示基於奈米線結構之複數個裝置。
在一個態樣中,提供一種裝置,該裝置包括一光學管,該光學管包括一核心及一包覆層,該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件。
在另一態樣中,提供一種複合光偵測器,其包括至少兩個不同裝置,每一裝置包括一光學管,該光學管包括一核心及一包覆層,該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件,且該複合光偵測器經組態以重構該電磁輻射束之一波長譜。
在又一態樣中,提供一種複合光偵測器,其包括至少一第一裝置及一第二裝置,其中該第一裝置經組態以在無任何濾光片之情形下以一第一選擇性波長提供對入射於該光學管上之一電磁輻射束之一第一分離,該第二裝置經組態以在無任何濾光片之情形下以一第二選擇性波長提供對入射於該光學管上之該電磁輻射束之一第二分離,該第一選擇性波長不同於該第二選擇性波長,該第一裝置及該第二裝置中之每一者包括一核心,該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件,且該複合光偵測器經組態以重構該電磁輻射束之一波長譜。
在以下詳細說明中,參照形成本發明一部分之附圖。在圖式中,類似符號通常識別類似組件,除非上下文另有規定。在詳細說明、圖式及申請專利範圍中所闡述之說明性實施例並非意指具有限制性。在不背離本文所呈現標的物之精神或範疇之情形下可利用其他實施例且可做出其他改變。
本發明尤其延伸至與一影像感測器及一複合像素相關之方法、設備、系統及裝置,該複合像素包括兩個像素之一系統,每一像素具有兩個光偵測器且能夠偵測兩個不同範圍之光波長。一實施例係關於一種用於增加一影像感測器之效率之方法。另一實施例提供一種用於消除濾色片以使得僅多於撞擊光之三分之一用於產生一電信號之構件。另一實施例係關於一種用於藉由增加撞擊於影像感測器上之經偵測電磁輻射之量來增加一影像感測器之效率之方法。
一實施例係關於一種裝置,該裝置包括一光學管,該光學管包括一核心及一包覆層,該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件。
一光學管係一種用以侷限及透射撞擊於該光學管上之一電磁輻射之元件。該光學管可包含一核心及一包覆層。
一核心與一包覆層係該光學管之互補組件且經組態以藉由該核心及包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長。一主動元件
係具有電控制電子及/或電洞流動(電控制電或光,或反之亦然)之能力之任一類型之電路組件。不能藉助另一電信號控制電流之組件稱為被動
元件。電阻器、電容器、電感器、變壓器及甚至二極體皆被視為被動元件。在本文中所揭示之實施例中,主動元件包含但不限於一主動波導、電晶體、矽控整流器(SCR)、發光二極體及光電二極體。一波導係一種經設計以沿由其實體邊界確定之一方向侷限及以通道方式傳輸選擇性波長之電磁輻射之系統或材料。較佳地,選擇性波長係波導之直徑之一函數。一主動波導係一種具有電控制電子及/或電洞流動(電控制電或光,或反之亦然)之能力之波導。舉例而言,主動波導之此能力係可將主動波導視為係「主動」且屬於一主動元件類之一個原因。
一實施例係關於用以增強將光透射至一積體電路(IC)上之光學主動裝置之方法。一實施例係關於用於製作窄垂直波導或者與IC表面或主動裝置具有一角度之波導之方法。其他實施例係關於自IC或光學主動裝置作為波導之核心或作為一主動裝置(例如一主動波導、一濾光片或一光電二極體)本身之奈米線生長。一實施例係關於藉由例如以下方法製作之波導:用以在主動光學裝置或IC頂部上產生垂直波導、濾光片、光電二極體之先進微影及奈米製造方法。
較佳地,裝置經組態以藉由適當組合在核心及包覆層中所偵測之電磁輻射之能量之來解析電磁輻射中所含有之黑色及白色或發光資訊。
在本文中所揭示之實施例中,較佳地,該核心包括一波導。較佳地,該主動元件經組態以作為一光電二極體、一電荷儲存電容器或其組合。更佳地,該核心包括一波導,該波導包括一半導體材料。該裝置可進一步包括在該核心中之波導周圍之一鈍化層。該裝置可進一步包括在該核心中之波導周圍之一金屬層。該裝置可進一步包括在該鈍化層周圍之一金屬層。較佳地,該裝置不包括濾色片或IR濾光片。較佳地,該光學管係圓形、非圓形或圓錐形。較佳地,該核心具有一核心折射指數(n1
)且該包覆層具有一包覆層折射指數(n2
),其中n1
>n2
或n1
=n2
。
在某些實施例中,該裝置可進一步包括至少一對金屬觸點,其中該等金屬觸點中之至少一者與該波導接觸。較佳地,該光學管經組態以在不需要一濾色片或IR濾光片之情形下藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長。較佳地,該波導經組態以轉換透射穿過該波導之電磁輻射之能量並產生電子電洞對(激子)。較佳地,該波導包括一PIN接面,其經組態以偵測該波導中所產生之激子。
在某些實施例中,該裝置可進一步包括在該核心中之波導周圍之一絕緣體層及在該絕緣體層周圍之一金屬層以形成一電容器,該電容器經組態以收集該波導中所產生之激子並儲存電荷。該裝置可進一步包括連接至該金屬層及波導之金屬觸點,以控制及偵測儲存於該電容器中之電荷。較佳地,該包覆層經組態以作為用以透射電磁輻射束之不透射穿過該核心之波長之一通道。較佳地,該包覆層包括一被動波導。
在某些實施例中,該裝置可進一步包括一週邊光敏元件,其中該週邊光敏元件以可運作方式耦合至該包覆層。較佳地,該光學管之一電磁輻射束接收端包括一彎曲表面。較佳地,該週邊光敏元件位於一基板上或位於一基板內。較佳地,該核心及該包覆層位於包括一電子電路之一基板上。
在某些實施例中,該裝置可進一步包括在該光學管上方之一透鏡結構或一光學耦合器,其中該光學耦合器以可運作方式耦合至該光學管。較佳地,該光學耦合器包括用以將電磁輻射以通道方式傳輸至該光學管中之一彎曲表面。
在某些實施例中,該裝置可進一步包括環繞該光學管之一堆疊,該堆疊包括嵌入於介電層中之金屬層,其中該等介電層具有比該包覆層之折射指數低之一折射指數。較佳地,該堆疊之一表面包括一反射表面。較佳地,該核心包括一第一波導且該包覆層包括一第二波導。
其他實施例係關於一種複合光偵測器,其包括至少兩個不同裝置,每一裝置包括一光學管,該光學管包括一核心及一包覆層,該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件,且該複合光偵測器經組態以重構該電磁輻射束之一波長譜。較佳地,該核心包括具有該選擇性波長之一第一波導以使得波長超過該選擇性波長之電磁輻射透射穿過該包覆層,進一步其中該至少兩個不同裝置中之每一者之核心之選擇性波長係不同以使得該至少兩個不同裝置以不同選擇性波長分離入射於該複合光偵測器上之該電磁輻射束。較佳地,該包覆層包括一第二波導,其准許波長超過該選擇性波長之電磁輻射保持於該包覆層內且被透射至一週邊光敏元件。較佳地,該包覆層之在該包覆層之一電磁輻射束發射端處之一橫截面積係大致等於該週邊光敏元件之一面積。該複合光偵測器可進一步包括環繞該光學管之一金屬與非金屬層堆疊。
較佳地,該複合光偵測器經組態以偵測四個不同波長範圍之電磁輻射之能量,其中該四個不同波長範圍之電磁輻射之能量經組合以構造紅色、綠色及藍色色彩。
其他實施例係關於一種複合光偵測器,其包括至少一第一裝置及一第二裝置,其中該第一裝置經組態以在無任何濾光片之情形下以一第一選擇性波長提供對入射於該光學管上之一電磁輻射束之一第一分離,該第二裝置經組態以在無任何濾光片之情形下以一第二選擇性波長提供對入射於該光學管上之該電磁輻射束之一第二分離,該第一選擇性波長不同於該第二選擇性波長,該第一裝置及該第二裝置中之每一者包括一核心,該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件,且該複合光偵測器經組態以重構該電磁輻射束之一波長譜。較佳地,該兩個不同裝置包括不同直徑之核心。較佳地,該波長譜包括可見光之波長、IR之波長或其組合。較佳地,該第一裝置包括其一直徑不同於該第二裝置之核心之直徑之一核心且該波長譜包括可見光之波長、IR之波長或其組合。
較佳地,該第一裝置包括一第一波導,該第二波導具有該第一選擇性波長以使得波長超過該第一選擇性波長之電磁輻射將不受該第一波導侷限,其中該第二裝置包括一第二波導,該第二波導具有該第二選擇性波長以使得波長超過該第二選擇性波長之電磁輻射將不受該第二波導侷限,進一步其中該第一選擇性波長不同於該第二選擇性波長。較佳地,該第一裝置進一步包括一第一波導,其准許波長大於該第一選擇性波長之電磁輻射保持於該第一波導內,且該第二裝置進一步包括一第二波導,其准許波長大於該第二選擇性波長之電磁輻射保持於該第二波導內。較佳地,該第一裝置及該第二裝置中之每一者皆包括一包覆層,該包覆層包括一光敏元件。該複合光偵測器可進一步包括環繞該第一裝置及該第二裝置之一金屬與非金屬層堆疊。較佳地,該第一裝置包括其一直徑不同於該第二裝置之核心之直徑之一核心且該波長譜包括可見光之波長。較佳地,複數個光偵測器配置於一正方形網格、一六邊形網格上或一不同網格配置中。
在又一些實施例中,該透鏡結構或該光學耦合器包括:一第一開口及一第二開口,其中該第一開口大於該第二開口;一連接表面,其延伸於該第一開口與該第二開口之間。較佳地,該連接表面包括一反射表面。
在又一些實施例中,複數個光偵測器係配置於一規則棋盤形佈置上。
在又一些實施例中,如圖2中所顯示,有效地呈一微透鏡形狀之一耦合器可位於光學管上以收集電磁輻射並將其導引至該光學管中。如圖2中所顯示,該光學管由折射指數n1
之一奈米線核心構成,該奈米線核心由折射指數n2
之一包覆層環繞。
在圖2之光學管之組態中,可消除吸收撞擊於影像感測器上之光之約2/3之經著色濾色片。該核心用作一主動波導且該光學管之包覆層用作一被動波導,其中一週邊光敏元件環繞該核心以偵測透射穿過該包覆層之被動波導之電磁輻射。被動波導不像濾色片一樣吸收光,但可經設計以選擇性地透射選定波長。較佳地,該光學管之包覆層之毗鄰於該週邊光敏元件(其在基板中或在基板上麵包覆層下面)之端之橫截面積與該週邊光敏元件之面積約相同大小。
一波導,不論是被動還是主動,皆具有一截止波長,該截止波長係波導可傳播之最低頻率。該核心之半導體波導之直徑用作該波導之截止波長之控制參數。在某些實施例中,該光學管在橫截面上可係圓形或可係圓形橫截面以便用作一圓形波導,其特徵在於以下參數:(1)核心半徑(Rc
);(2)核心折射指數(n1
);及(3)包覆層折射指數(n2
)。此等參數大體確定可傳播穿過波導之光之波長。一波導具有一截止波長λct
。入射電磁輻射之具有長於截止波長之波長之部分將不受核心侷限。因此,用作其截止波長在綠色處之一波導之一光學管將不使紅色光傳播穿過核心,且用作其截止波長在藍色處之一波導之一光學管將不使紅色光及綠色光傳播穿過核心。
在一個實施方案中,一藍色波導及一藍色/綠色波導可嵌入於可在包覆層中之一白色波導內。舉例而言,任何藍色光皆可保持於一核心中之藍色波導中,任何藍色或綠色光皆可保持於另一核心之綠色/藍色波導中,且剩餘部分之光可保持於一個或多個包覆層中之白色波導中。
核心亦可藉由吸收受侷限之光並產生電子電洞對(激子)來用作一光電二極體。因此,核心中之其截止波長在綠色處之一主動波導將不傳播紅色光但且亦將吸收受侷限之綠色光並產生激子。
可藉由使用以下兩個設計中之至少一者來偵測如此產生之激子:
(1) 一核心係由三個層(半導體、絕緣體及金屬)構成,因此形成一電容器以收集光誘致載子所產生之電荷。製成至金屬及至半導體之觸點以控制及偵測所儲存之電荷。可藉由生長一奈米線及環繞該奈米線沈積一絕緣體層及一金屬層來形成該核心。
(2) 一核心具有在核心線中誘發一電位梯度之一PIN接面。可藉由以下方式形成該核心中之PIN接面:生長一奈米線並在該奈米線核心正生長為一PIN接面時對其進行摻雜,且使用作為任一裝置之部分之各種金屬層在適當點處與其接觸。
實施例之光敏元件通常包括一光電二極體,但不僅限於一光電二極體。通常,在使用一適當摻雜劑時,將光電二極體摻雜為自每立方公分約1×1016
至1×1018
個摻雜劑原子之一濃度。
圖2中之層1至層11圖解說明類似於圖1之層1至層11之不同堆疊層。該等堆疊層包括含介電材料及含金屬之層。介電材料包含但不限於具有自約4至約20之一介電常數(在真空中量測)之矽之氧化物、氮化物及氧氮化物。同樣包含在內且亦不為限制性的係自約20至至少約100之一介電常數之通常較高介電常數閘極介電材料。此等較高介電常數介電材料可包含但不限於氧化鉿、矽酸鉿、氧化鈦、矽酸鋇鍶(BST)及鋯鈦酸鉛(PZT)。
含介電材料之層可使用適於其等組成材料之方法來形成。方法之非限制性實例包含熱氧化或電漿氧化或者熱氮化或電漿氮化方法、化學氣相沈積法(包含原子層化學氣相沈積方法)及物理氣相沈積方法。
含金屬之層可用作電極。非限制性實例包含某些金屬、金屬合金、金屬矽化物及金屬氮化物,以及經摻雜多晶矽材料(亦即,每立方公分具有自約1×1018
至約1×1022
個摻雜劑原子之一摻雜劑濃度)及多晶矽化物(亦即,經摻雜多晶矽/金屬矽化物堆疊)材料。可使用數種方法中之任何方法來沈積含金屬之層。非限制性實例包含化學氣相沈積方法(亦包含原子層化學氣相沈積方法)及物理氣相沈積方法。含金屬之層可包括一經摻雜多晶矽材料(具有通常在範圍1000埃至1500埃中之一厚度)。
電介質及金屬化堆疊層包括一系列介電鈍化層。同樣嵌入於該堆疊層內的係互連金屬化層。用於互連金屬化層對之組件包含但不限於接觸凸柱、互連層、互連凸柱。
可用於互連金屬化層內之個別金屬化互連凸柱及金屬化互連層可包括在半導體製作技術中係習用之數種金屬化材料中之任一者。非限制性實例包含某些金屬、金屬合金、金屬氮化物及金屬矽化物。如下文中更詳細論述,最常見的係矽鋁金屬化材料及銅金屬化材料,該兩者中之任一者經常包含一障壁金屬化材料。金屬化材料之類型可隨著其在一半導體結構中之大小及位置而不同。較小及下部敷設金屬化特徵通常包括含銅導體材料。較大及上部敷設金屬化特徵通常包括含鋁導體材料。
該系列介電鈍化層亦可包括在半導體製作技術中係習用之數種介電材料中之任一者。包含在內的係具有自4至約20之一介電常數之通常較高介電常數介電材料。包含於此群組內之非限制性實例係矽之氧化物、氮化物及氧氮化物。舉例而言,該系列介電層亦可包含具有自約2至約4之一介電常數之通常較低介電常數介電材料。包含於此群組內但不限於此的係水凝膠(例如矽水凝膠)、氣凝膠(像矽Al或碳氣凝膠)、倍半氧矽烷旋塗玻璃介電材料、氟化玻璃材料、有機聚合物材料及其他低介電常數材料(例如經摻雜二氧化矽(例如,摻雜有碳、氟)及多孔二氧化矽)。
通常,介電及金屬化堆疊層包括互連金屬化層及離散金屬化層,其包括銅金屬化材料及鋁金屬化材料中之至少一者。電介質及金屬化堆疊層還包括介電鈍化層,該等介電鈍化層亦包括上文所揭示之通常較低介電常數介電材料中之至少一者。介電及金屬化堆疊層可具有自約1微米至約4微米之一總厚度。其可於一堆疊內包括自約2至約4的離散水平介電及金屬化組件層。
可使用在半導體製作技術中係習用且適於形成該系列介電鈍化層之材料之方法及材料來圖案化堆疊層之若干層以形成經圖案化介電及金屬化堆疊層。可不在包含完全位於其中之一金屬化特徵之一位置處圖案化介電及金屬化堆疊層。可使用濕式化學蝕刻方法、幹式電漿蝕刻方法或其等綜合方法來圖案化介電及金屬化堆疊層。若需要尺寸極其小,則幹式電漿蝕刻方法以及電子束蝕刻就其等在形成該系列經圖案化介電及金屬化堆疊層時提供增強之側壁輪廓控制而言通常係較佳。
平坦化層11可包括數種透光平坦化材料中之任一者。非限制性實例包含旋塗玻璃平坦化材料及有機聚合物平坦化材料。平坦化層11可在光學管上面延伸以使得平坦化層11將具有足以至少平坦化該光學管之開口之一厚度,因此提供用於製作CMOS影像感測器內之額外結構之一平面表面。可圖案化該平坦化層以形成經圖案化之平坦化層。
視情況,可存在位於經圖案化之平坦化層11上之一系列濾色片層12。該系列濾色片層(若存在)通常將包含三原色紅色、綠色及藍色或者互補色彩黃色、青色及紫紅色。該系列濾色片層通常將包括一系列經染色或經著色之經圖案化光阻劑層,該等光阻劑層經本徵成像以形成該系列濾色片層。另一選擇為,該系列濾色片層可包括經染色或經著色之有機聚合物材料,該等材料以其他方式透光但在使用一適當遮罩層時其等經非本徵成像。亦可使用替代濾色片材料。該濾光片亦可係用於一黑色及白色或IR感測器之濾光片,其中該濾光片主要截止可見並通過IR。
間隔件層(13)可係由將堆疊層與微透鏡(14)在實體上而非在光學上分離之任一材料製成之一個或多個層。該間隔件層可由一介電間隔件材料或一介電間隔件材料壓層形成,但亦已知由導體材料形成之間隔件層。矽之氧化物、氮化物及氧氮化物通常用作介電間隔件材料。不排除其他元素之氧化物、氮化物及氧氮化物。可使用與上文所闡述之方法類似、等效或相同之方法沈積該介電間隔件材料。可使用給間隔件層提供特性內指形狀之一毯覆層沈積及回蝕方法來形成間隔件層。
微透鏡(14)可包括在此技術中已知之數種透光透鏡材料中之任一者。非限制性實例包含透光無機材料、透光有機材料及透光複合材料。最常見的係透光有機材料。通常透鏡層可經形成而易於圖案化且回流具有低於該系列濾色片層12(倘若存在)或經圖案化之平坦化層11之玻璃轉變溫度之一有機聚合物材料。
在光學管中,核心中之高指數材料可(舉例而言)係具有約2.0之一折射指數之矽氮化物。較低指數包覆層材料可(舉例而言)係一玻璃,例如選自表II具有約1.5之一折射指數之一材料。
在表II中,PESiN係指電漿增強SiN且PESiO係指電漿增強SiO。
視情況,一微透鏡可位於光學管上接近影像感測器之入射電磁輻射束接收端處。微透鏡之功能或更一般而言將係一耦合器,亦即,將入射電磁輻射束耦合至光學管中。若在此實施例中選擇一微透鏡作為耦合器,則其距光學管之距離將比至光敏元件之距離遠得多,因此對微透鏡之曲率之約束係較不嚴格的,由此使其可與現有製作技術一起實施。
光學管之形狀可因不同實施例而係不同的。在一個組態中,該光學管可係圓柱形,亦即,管之直徑貫穿光學管之長度保持大致相同。在另一組態中,該光學管可係圓錐形,其中該光學管之橫截面積之上部直徑可係大於或小於該光學管之橫截面積之下部直徑。術語「上部」及「下部」係指光學管之位於較靠近影像感測器之入射電磁輻射束接收端及發射端之端。其他形狀包含一圓錐形區段堆疊。
表II列舉數種不同玻璃及其等之折射指數。此等玻璃可用於製造光學管以使得核心之折射指數比包覆層之折射指數高。可在不使用經著色濾色片之情形下使用具有不同折射指數之不同透明玻璃來製作實施例之影像感測器。
藉由嵌套用作波導之光學管及使用如於圖2中所顯示之一微透鏡耦合器,一影像感測器陣列可經組態以獲得具有在每一影像感測器之每一光學管之核心及包覆層中以一截止波長分離之電磁輻射之波長之互補色彩。互補色彩通常係當以適合之比例混合時產生一中性色彩(灰色、白色或黑色)之兩種色彩。此組態亦使得能夠捕獲大多數之撞擊於微透鏡上之電磁輻射入射束且將其導引至位於光學管之下端處之光敏元件(亦即,光電二極體)。具有不同色彩互補分離之兩個毗鄰或大致毗鄰影像感測器可提供用以根據本文所闡述之實施例重構一全色彩場景之完整資訊。本文中所揭示實施例之此技術可進一步取代用於影像感測之基於顏料之色彩重構,其具有不充分擯棄(藉由吸收)針對每一像素之未選色彩之問題。
含有本文所揭示實施例之一影像感測器之一裝置之每一實體像素將具有表示互補色彩之兩個輸出,例如指定為輸出類型1之青色(或紅色)及指定為輸出類型2之黃色(或藍色)。此等輸出將配置如下:
每一實體像素將具有藉由組合其兩個互補輸出而獲得之全亮度資訊。因此,同一影像感測器可用作一全解析度黑色及白色感測器或全色彩感測器。
在本文所揭示之影像感測器之實施例中,入射電磁輻射束之波長之全光譜(例如,入射光之全色彩資訊)可藉由適當地組合兩個水平地或垂直地毗鄰像素而獲得,此不同於針對習用拜耳圖案之4個像素。
端視最小電晶體大小,含有本文所揭示實施例之一影像感測器之每一像素在間距上可係小至1微米或更小且又具有充分敏感度。此可開創用於例如生物系統之極小結構之接觸成像之方式。
在以下闡述之上下文中將進一步詳細地闡述包含一影像感測器以及用於製作其之方法之複數個實施例之實施例。在以上所闡述之圖式之上下文中進一步理解該闡述。圖式係出於圖解說明之目的且因此不必按比例繪製。
一複合像素之一實施例包括兩個像素之一系統,每一像素具有具有一不同直徑之一核心以使得核心具有直徑d1
及d2
以引導不同波長(λB
及λR
)之光。兩個核心亦用作光電二極體以捕獲波長λB
及λR
之光。兩個影像感測器之包覆層用於透射波長λw-B
及λw-R
之光。藉由環繞該等核心之週邊光敏元件來偵測透射穿過包覆層之波長λw-B
及λw-R
之光。注意,(w)係指白色光之波長。來自複合像素中之4個光電二極體(兩個位於核心中且兩個位於環繞核心之基板中或基板上)之信號用於構造色彩。
該等實施例包含一奈米結構化光電二極體(PD),根據該等實施例其包括一基板及自該基板伸出之一直立奈米線。在該結構內可存在賦予用以偵測光之一主動區域之pn接面。奈米線、奈米線之一部分或與該奈米線連接之一結構形成一波導,該波導引導及偵測撞擊於裝置上之光之至少一部分。另外,該波導兼作達成撞擊光之色彩範圍之確定之光譜濾光片。
可以不同方式改進該等實施例之光學管之波導性質。波導核心具有一第一有效折射指數n1
(下文亦稱為nw
),且環繞該波導之至少一部分之包覆層中之材料具有一第二有效折射指數n2
(下文亦稱為nc
),且藉由確保該第一折射指數大於該第二折射指數(n1
>n2
),為該光學管提供良好波導性質。可藉由將光學主動包覆層引入於波導核心上來進一步改進該等波導性質。奈米線核心用作一波導,且亦用作亦可作為一主動電容器之一奈米結構化PD。根據該等實施例之奈米結構化PD特別適合於大批生產,且所闡述之方法可針對工業用途而按比例調整。
奈米線技術提供選擇在習用體層技術中係不可能之材料及材料組合之可能性。此用於根據該等實施例之奈米結構化PD中以提供偵測良好界定之波長區域中之光(藉由習用技術係不可能的,例如,藍色、青色或白色)之PD。根據該等實施例之設計允許在該奈米線內包含異質結構以及不同摻雜之區,從而促進電及/或光學性質之最佳化。
根據該等實施例之一奈米結構化PD由一直立奈米線構成。出於此申請案之目的,應將一直立奈米線解釋為以某一角度自基板伸出之一奈米線,舉例而言,該直立奈米線係自基板生長,較佳藉由作為氣-液-固(VLS)生長之奈米線。與該基板之角度通常將係該基板及該奈米線中之材料、該基板之表面及生長條件之一結果。藉由控制此等參數,可產生僅指向一個方向(舉例而言,垂直)或指向有限組之方向之奈米線。舉例而言,由來自週期表之行III、V及IV之元素構成之閃鋅礦及金剛石半導體之奈米線及基板,此等奈米線可沿[111]方向生長且然後沿正常方向生長至任何{111}基板表面。如正常至表面之間的角度所給出之其他方向及奈米線之軸向方向包含70,53°{111}、54,73°{100}以及35,27°及90°(兩者均為{110})。因此,奈米線界定一個方向、有限組之方向。
根據該等實施例,奈米線或由奈米線形成之結構之一部分用作一波導,其沿直立奈米線所賦予之一方向引導並侷限撞擊於奈米結構化PD上之光之至少一部分。理想波導奈米結構化PD結構包含具有一個或多個環繞包覆層之一高折射指數核心,該一個或多個環繞包覆層具有比該核心之折射指數小之折射指數。該結構係圓形對稱的或接近圓形對稱的。眾所習知呈圓形對稱結構之光波導用於光纖應用且可對經稀土摻雜光纖裝置之區做出諸多平行結構。然而,一個差異係光纖放大器經光學抽吸以增強導引穿過其之光而所闡述之奈米結構化PD可視為一高效光至電轉換器。一個眾所習知的優點特徵係所謂的數值孔徑NA。NA確定光導所捕獲之光之角度。NA及所捕獲光之角度係一新PD結構之最佳化中之一重要參數。
對於在IR中及高於IR運作之一PD,使用GaAs係好的,但對於在可見光區域中運作之一PD,矽將係較佳的。舉例而言,為形成電路,Si及經摻雜Si材料係較佳的。類似地,對於在可見光範圍中工作之一PD,將最好使用Si。
在一個實施例中,當與具有介於自1.4至2.3之範圍中之折射指數之玻璃類型之包覆層材料(例如,SiO2
或Si3
N4
)組合時,III-V半導體核心材料之折射指數之典型值係在自2.5至5.5之範圍中。一較大捕獲角度意指以較大角度撞擊之光可耦合至光導中以達成較好捕獲效率。
光捕獲之最佳化中之一個考慮因素係向奈米線結構中提供一耦合器以最佳化至該結構中之光捕獲。一般而言,具有最高之NA將係較佳,其中發生光收集。此將最大化捕獲且導引至PD中之光。
根據實施例之一奈米結構化PD示意性地圖解說明於圖2中且包括一基板及以一經界定角度θ自該基板以磊晶方式生長之一奈米線。該奈米線之一部分或全部可經配置以充當一波導部分且將稱為一波導,其沿該奈米線之伸長方向所賦予之一方向引導撞擊光之至少一部分。在一個可能實施方案中,藉由在線正生長時使對其之摻雜沿其長度變化來形成二極體功能性所必需之一pn接面。可在奈米線上提供兩個觸點,舉例而言,一個在頂部上或在圓周外表面上呈一包繞組態(已繪示)且另一觸點可提供於基板中。該基板及直立結構之部分可由一覆蓋層覆蓋,舉例而言,該覆蓋層作為如所圖解說明之一薄膜或作為填充環繞奈米結構化PD之空間之材料。
奈米線通常具有約為50nm至500nm之一直徑。該奈米線之長度通常且較佳約為1μm至10μm。pn接面產生配置於該奈米線中之一主動區域。該奈米線中之撞擊光子被轉換為電子電洞對且在一個實施方案中隨後由該PN接面沿該奈米線之長度產生之電場分離。奈米結構化PD之不同部件之材料經選擇以使得該奈米線將相對於環繞材料具有良好波導性質,亦即,該奈米線中之材料之折射指數較佳應大於該等環繞材料之折射指數。
另外,該奈米線可具備一個或多個層。一第一層可經引入以改進該奈米線之表面性質(即,減少電荷洩漏)。進一步之層,舉例而言,一光學層,可經特定引入以便以類似於在光纖區中良好建立之方式改進該奈米線之波導性質。該光學層通常具有在該奈米線之折射指數與該環繞包覆層區域材料之間的一折射指數。另一選擇係,該中間層具有一分級折射指數,經顯示其在某些情形下改進光透射。若利用一光學層,則該奈米線之折射指數nw
應針對該奈米線及該等層兩者界定一有效折射指數。
如以上所闡述及以下所例示,在一個實施例中,利用生長具有良好界定之直徑之奈米線之能力關於由奈米結構化PD侷限及轉換之光之波長最佳化該奈米線或至少波導之波導性質。在該實施例中,該奈米線之直徑經選擇以便具有對所期望光之波長之一有利對應。較佳地,該奈米線之尺寸使得沿該奈米線提供一均勻光學腔(針對所產生之光之特定波長最佳化)。核心奈米線必須足夠寬以捕獲所期望之光。經驗法則將係直徑必須大於λ/2nw
,其中λ係所期望之光之波長且nw
係奈米線之折射指數。作為一實例,約60nm之一直徑可適於僅將藍色光侷限於一矽奈米線中而80nm直徑可適於僅將藍色及綠色光兩者侷限於一矽奈米線中。
在紅外線及近紅外線中,高於100nm之一直徑將係充足的。對奈米線之直徑之一接近較佳上限由生長約束給出且約為500nm。奈米線之長度通常且較佳約為1μm至10μm,從而為光轉換區域提供足夠容積。
在一個實施例中,一反射層提供於基板上且在線下方延伸。該反射層之用途係反射由該線導引但尚未在奈米結構化PD中被吸收且轉換為載子之光。該反射層較佳以包括重複矽酸鹽層之一多層結構之形式(舉例而言)提供或提供為一金屬膜。若奈米線之直徑充分小於光之波長,則一大部分之經導引光模式將延伸於光導外側,從而達成環繞窄奈米線波導之一反射層之高效反射。
用以在波導核心之下端中得到一反射之一替代途徑係在奈米線下方之基板中配置一反射層。又一替代途徑係在波導內引入反射構件。此反射構件可係在奈米線之生長過程期間提供之一多層結構,該多層結構包括(舉例而言)SiNx
/SiOx
(電介質)之重複層。
可與所提及之生長奈米線之方法一起達成之先前所繪示之圓柱形容積元件應視為一實例性形狀。合理之其他幾何結構包含但不限於具有一穹頂形頂部之一長球形、一球形/橢圓形及錐形。
為形成光偵測所必需之pn接面,較佳對奈米結構之至少部分進行摻雜。此藉由在生長奈米線期間改變摻雜劑或一旦生長奈米線即對其使用一徑向淺植入方法來完成。
考量其中奈米線生長由一物質局部地增強之系統(如氣-液-固生長(VLS)生長之奈米線),藉由更改生長條件在徑向與軸向生長之間更改的能力達成可重複該程序(奈米線生長、遮罩形成及後續選擇性生長)以形成更高數量級之奈米線/3D序列。對於其中奈米線生長與選擇性生長未由單獨生長條件區分之系統,可更好首先沿長度生長奈米線且藉由不同選擇性生長步驟生長不同類型之3D區域。
為製作具有由Si形成之主動奈米線區域之一光偵測pn二極體/陣列之根據本實施例之一製作方法包括以下步驟:
1. 藉由微影在一矽基板上界定局部觸媒。
2. 自局部觸媒生長矽奈米線。針對觸媒線生長調整生長參數。
3. 在該奈米線周圍徑向生長其他半導體、鈍化、薄絕緣體或金屬同心層(包覆層)。
4. 在PD奈米線上且至基板及至一CMOS電路中之其他金屬層地形成觸點。
該生長過程可在習知方式中變化以(舉例而言)包含奈米線中之異質結構、提供反射層等等。
端視奈米結構化PD之意欲用途,適合製作過程之可用性、材料之成本等等、一寬廣範圍之材料可用於該結構之不同部分。另外,基於奈米線之技術允許原本將不可能組合之材料之無缺陷之組合。III-V半導體因其促進高速及低功率電子裝置之性質而受到特定關注。用於基板之適合材料包含但不限於:Si、GaAs、GaP、GaP:Zn、GaAs、InAs、InP、GaN、Al2
O3
、SiC、Ge、GaSb、ZnO、InSb、SOI(絕緣體上矽)、CdS、ZnSe、CdTe。用於奈米線110之適合材料包含但不限於:Si、GaAs(p)、InAs、Ge、ZnO、InN、GaInN、GaN、AlGaInN、BN、InP、InAsP、GaInP、InGaP:Si、InGaP:Zn、GaInAs、AlInP、GaAlInP、GaAlInAsP、GaInSb、InSb。用於例如GaP、Te、Se、S等等之可能施體摻雜劑及用於相同材料之受體摻雜劑係Zn、Fe、Mg、Be、Cd等等。應注意,奈米線技術使得使用例如SiN、GaN、InN及AlN之氮化物成為可能,該氮化物促進偵測波長區域中不可由習用技術容易地接近之光之PD之製作。受到商業特定關注之其他組合包含但不限於GaAs、GaInP、GaAlInP、GaP系統。典型摻雜位準介於自1018
至1020
之範圍內。但熟習此項技術者熟悉此等及其他材料且認識到其他材料及材料組合係可能的。
低電阻性接觸材料之適當性取決於欲沈積之材料,但可使用金屬、金屬合金以及非金屬複合物(比如Al、Al-Si、TiSi2
、TiN、W、MoSi2
、PtSi、CoSi2
、WSi2
、In、AuGa、AuSb、AuGe、PdGe、Ti/Pt/Au、Ti/Al/Ti/Au、Pd/Au、ITO(InSnO)等等)以及例如金屬及ITO之組合。
基板係裝置之一組成部分,此乃因其亦含有偵測尚未侷限於奈米線之光所必需之光電二極體。另外,基板亦含有用以控制PD之偏壓、放大及讀出之標準CMOS電路以及認為係必需且有用之任一其他CMOS電路。基板包含其中有主動裝置之基板。用於基板之適合材料包含矽及含矽材料。通常,該等實施例之每一感測器元件包含一奈米結構化PD結構,該結構包括一奈米線、包封該奈米線之至少一部分之一包覆層、一耦合器及兩個觸點。
在矽上製作奈米結構化PD在奈米線均勻地對準垂直於基板之(111)方向且基本上無奈米線沿自基板延伸出之三個傾斜(111)方向生長之程度內係可能的。矽基板上呈預界定陣列結構之III-V奈米線之良好對準之生長對於光學裝置以及大多數其他應用之成功大規模製作係較佳的。
基於矽奈米線之PD裝置因其偵測對於其他材料組合係不可能之選定波長之光之能力而受到高度商業關注。另外,其允許一複合光電二極體之設計,該複合光電二極體允許偵測大多數撞擊於一影像感測器上之光。
以下參照本文中所示之圖在實例中闡述本文中所揭示實施例之影像感測器之製作。
實例1之實施例係關於包括一核心及一包覆層之一光學管之製造。
該核心由三個層(一半導體奈米線、一絕緣體及金屬)構成,因此形成一電容器以收集該奈米線中之光誘致載子所產生之電荷。製成至金屬及至半導體奈米線之觸點以控制及偵測所儲存之電荷。實例1之實施例之核心用作一波導及一光電二極體。實例1之實施例之包覆層包括位於光學感測器之一矽基板中或矽基板上之一週邊波導及一週邊光電二極體。
圖3-1至3-23中顯示光學感測器之一像素之製作。圖3-1顯示基板中具有一光學裝置之一積體電路(IC)。該光學裝置包含一週邊光電二極體。圖3-1之IC包括視情況其中具有主動裝置之一矽晶圓基板、在該矽晶圓中或該矽晶圓上之一週邊光電二極體、含有金屬化層及金屬間介電層之堆疊層以及一鈍化層。該等堆疊層之厚度通常大約為10μm。熟習此項技術者已熟知藉由平面沈積技術製造圖3-1之IC之方法。圖3-1之IC可係製造實例1之實施例之開始點。
自圖3-1中所示之IC開始,用於製造實例1之實施例之步驟可係如下:
採用具有1:10蝕刻比率之約2μm厚光阻劑(圖3-3)。
將該光阻劑曝光於紫外(UV)光、將該光阻劑顯影、後烘焙該光阻劑及蝕刻該光阻劑以在該週邊光電二極體上面形成一開口(圖3.4)。
藉由深反應性離子蝕刻(RIE)蝕刻該週邊光電二極體上方之堆疊層中之介電層以在該等堆疊層中形成一深腔,其中該深腔向上延伸至該矽晶圓基板中或該矽晶圓基板上之週邊光電二極體(圖3-5)。
移除該等堆疊層上面之光阻劑(圖3-6)。
在該深腔之垂直壁中沈積一金屬(例如一銅)(圖3-7)。
在該等堆疊層之頂部表面上及在該深腔之垂直壁上之金屬層上施加電子束抗蝕劑(圖3-8)。
移除該週邊二極體上或該週邊二極體中含矽點上之一位置處之電子束抗蝕劑以在位於該含矽點上之電子束抗蝕劑中形成一開口(圖3-9)。
藉由在該電子束抗蝕劑之表面及該電子束光阻劑中之開口上濺鍍或蒸發金施加金層(圖3-10)。
藉由剝離該電子束光阻劑及金形成一金粒子,由此在該電子束抗蝕劑中之開口中留下一金粒子(圖3-11)。應注意,留在該深腔中之金粒子之厚度及直徑確定奈米線之直徑。
藉由電漿增強氣-液-固生長來生長一矽奈米線(圖3-12)。在WO2008079076A1以及美國專利公開案20080248304、20080246123、20080246020及20080237568中通常闡述用於在半導體基板上生長奈米線之適合方法。將在美國專利公開案20040075464中找到提供具有異質結構之以磊晶方式生長之奈米線之方法。可在Lu等人之「Growth of Single Crystal Silicon Nanowires in Supercritical Solution from Tethered Gold Particles on a Silicon Substrate」(NanoLetters,2003年,卷3,第1期,第93-99頁,尤其係前四段)中找到關於矽奈米線之生長之額外論述,其全部揭示內容以引用方式併入本文中。Majumdar等人之美國專利公開案2002/0172820(2002年11月21日公開)揭示奈米線。另外,以下參考可用作實踐本文中所揭示實施例之導引:(1)Madou,Fundamentals of Microfabrication,2nd Ed.,CRC Press,2002(舉例而言,第125-204頁處闡述矽(包含結晶矽)之性質及生長);(2)「Control of Thickness and Orientation of Solution-Grown Silicon Nanowires」;Holmes等人,Science,卷287,2000年2月25日,第1471-1473頁(此參考揭示大量無缺陷之矽奈米線,其具有藉助一超臨界流體溶液相途徑之介於自40-50埃生長至數微米之範圍內之接近均勻之直徑);(3)「A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires」;Morales等人,Science,卷279,1998年1月9日,第208-211頁;(4)「Nucleation and Growth of Germanium Nanowires Seeded by Organic Monolayer-Coated Gold Nanocrystals」;Hanrath等人;J. Am. Chem. Soc.,卷124,第7期,2002年,第1424-1429頁;(5)美國專利公開案2003/0003300 A1,2003年1月2日公開,頒予Korgel及Johnston,特定而言,其闡述超臨界流體過程及使用有機矽前體來形成矽奈米粒子;及(6)「Supercritical Fluid-Liquid-Solid(SFLS) Synthesis of Si and Ge Nanowires Seeded by Colloidal Metal Nanocrystals」,Hanrath,T.等人,Advanced Materials,2003,15,第5期,3月4日,第437-440頁。以上所提及之參考以全文引用方式併入本文中。
可如下製成本文中所揭示實施例之矽奈米線。提供包括具有一二氧化矽表面之矽之一基板。可藉助一表面處理改良該表面以促進一金奈米粒子之吸收。在此經改良表面上,可藉由沈積一金層(圖3-10)、隨後移除不同於金奈米粒子之所期望位置以外之區域上方之金層(圖3-11)來形成金納米粒子。該金奈米粒子可經表面處理以提供立體穩定性。換言之,經鏈系之空間穩定之金奈米粒子可用作用於奈米線之進一步合成之晶籽,其中該等金奈米粒子被吸收至經改良矽基板。二苯基矽烷(DPS)之降解形成矽原子。將此等矽原子引入至圖3-11中所示之IC之堆疊層中之深腔。該等矽原子附接至金奈米粒子且在金奈米粒子飽和有矽原子之後一矽奈米線自金奈米粒子晶籽結晶(圖3-12)。
藉由化學氣相沈積(CVD)、原子層沈積(ALD)、氧化或氮化形成一保形介電塗層(圖3-13)。
藉由電漿增強化學氣相沈積、旋塗、濺鍍、視情況借助一初始原子層沈積來沈積經摻雜玻璃(圖3-14)。
藉由化學機械平坦化或其他蝕刻方法回蝕所沈積之經摻雜玻璃(圖3-15)。
圖3-16至2-23係關於產生用以將電磁輻射(例如光)以通道方式傳輸至奈米線波導中之一漏斗及該漏斗上之一透鏡。步驟如下:
藉由CVD、濺鍍沈積或旋塗沈積一玻璃/氧化物/介電層(圖3-16)。
在所沈積玻璃/氧化物/介電層上施加一光阻劑(圖3-17)。
移除深腔內之奈米線上方之居中之開口外側之光阻劑(圖3-18)。
藉由在該玻璃/氧化物/介電層中進行半各向同性蝕刻形成一耦合器(圖3-19)。
實例1之實施例係關於包括一核心及一包覆層之一光學管之製造。
該核心具有在核心線中誘發一電位梯度之一PN或PIN接面。可藉由生長一奈米線並在該奈米線核心正生長為一PIN接面時對其進行摻雜來形成該核心中之PN或PIN接面。舉例而言,奈米線之摻雜可具有兩個摻雜位準以形成N及P,或換言之,該奈米線可包括P、I及N區域以形成一PIN光電二極體。而,另一可能性係沿線之長度以同心圓對其進行摻雜以形成P及N或P、I及N區域以形成一PN或PIN光電二極體。使用各種金屬層(其係用以偵測PN或PIN接面奈米線中之光誘致載子所產生之電荷之任一裝置之部分)在沿PN或PIN接面奈米線之適當點處接觸該PN或PIN接面奈米線(亦稱為一PN或PIN光電二極體)。實例2之實施例之包覆層包括位於光學感測器之矽基板中或矽基板上之一週邊波導及一週邊光電二極體。
製成實例2之實施例之方法在許多方式中類似於實例1之實施例之方法。為簡明起見,以下參照圖3-1至3-23闡述製成實例2之實施例之方法。
實施實例1之圖3-1至3-6中所示之步驟。
省略實例1之圖3-7中所示之在垂直腔壁中沈積一金屬之步驟。
隨後,實施實例1之圖3-8至3-11中所示之步驟。
接下來,實施實例1之奈米線生長步驟之一經修改版本。使用一金奈米粒子作為一觸媒使一奈米線結晶之方法將類似於實例1之方法。然而,在實例1中,在圖3-12中所示之步驟中生長之奈米線包括貫穿該奈米線大致相同之材料。另一方面,在實例2中,實例1之圖3-12中所示之奈米線生長步驟由以下步驟替代:生長具有兩個或更多個不同經摻雜區域之一奈米線以藉由生長一經N摻雜(經n摻雜)奈米線隨後生長一經P摻雜(經p摻雜)奈米線形成一PN光電二極體(圖4)或者藉由首先生長一經N摻雜(經n摻雜)奈米線然後生長一經I摻雜(亦稱為奈米線之I區域)奈米線形且最後生長一經p摻雜奈米線形成一PIN光電二極體(圖5)。藉由此項技術中眾所習知之方法實施奈米線之摻雜。在圖4及5中,奈米線上之金可成形為一珠、一半珠或一大致平坦層。
省略沈積實例1之圖3-13中所示之一保形介電塗層之步驟。
最後,實施圖3-14至3-19中所示之步驟。
在其他實施例中,在一單個深腔中可存在多個奈米線,如圖6中所示,其中在底部處係其上存在一奈米線陣列之一矽基板,在該奈米線陣列上方係一耦合器(顯示為一橢圓形),且在該耦合器上方係光穿過其進入至該耦合器中之一區域(顯示為矩形箱)。
影像感測器之實施例對色彩及亮度之辨識可藉由色彩重構完成。每一複合像素具有藉由組合其兩個互補輸出獲得之全亮度資訊。因此,同一影像感測器可用作一全解析度黑色及白色感測器或全色彩感測器。
可藉由適當地組合兩個水平或者垂直毗鄰像素(其可係一複合像素之一個實施例)來進行色彩重構以獲得全色彩資訊。獲得色彩資訊所經由之支援係小於兩個像素之尺寸而非針對拜耳圖案之4個像素之尺寸。
含有本文所揭示之實施例之一影像感測器之一裝置之每一實體像素將具有表示互補色彩之兩個輸出,例如指定為輸出類型1之青色、紅色(C、R)或指定為輸出類型2之黃色、藍色(Y、B)(如圖7中所示)。一複合像素之兩個像素之此等4個輸出可經解析以重構由含有本文所闡述之實施例之影像感測器之一裝置觀察到之一影像之一全色彩場景。
前述詳細說明已經由使用圖、流程圖及/或實例闡釋裝置及/或製程之各種實施例。在此等圖、流程圖及/或實例含有一個或多個功能及/或作業之情形下,熟習此項技術者應理解可藉助一寬廣範圍之硬體、軟體、韌體或幾乎其任一組合個別地及/或共同地實施此等圖、流程圖及/或實例中之每一功能及/或作業。在一個實施例中,本文所闡述之標的物之數個部分可經由專用積體電路(ASIC)、現場可程式化閘陣列(FPGA)、數位信號處理器(DSP)或其他積體格式來實施。然而,熟習此項技術者將認識到本文所揭示之實施例之某些態樣可作為在一個或多個電腦上運行之一個或多個電腦程式(例如,在一個或多個電腦系統上運行之一個或多個程式)、在一個或多個處理器上運行之一個或多個程式(例如,在一個或多個微處理器上運行之一個或多個程式)、韌體、或幾乎其等任一組合全部或部分地等效實施於積體電路中,且根據本發明,設計電路及/或寫入用於軟體及/或韌體之程式碼將肯定在熟習此項技術者之技能範疇內。另外,熟習此項技術者將瞭解本文所闡述之標的物之機制係能夠被分佈為各種形式之一程式產品,且無論用於實際執行該分佈之信號承載媒體之特定類型如何,均應用本文所闡述之標的物之一說明性實施例。一信號承載媒體之實例包括但不限於以下:例如一軟磁碟、一硬磁碟驅動器、一壓縮光盤(CD)、一數位視訊光碟、一數位磁帶、一電腦記憶體等等之一可記錄類型媒體;及例如一數位及/或一類比通信媒體(例如,一光纖電纜、一波導、一有線通信鏈路、一無線通信鏈路等等)之一傳輸類型媒體。
熟習此項技術者將認識到在此項技術中以本文闡釋之方式闡述裝置及/或過程,且此後使用工程設計實踐將此等所闡述裝置及/或過程整合至資料處理系係常見的。亦即,本文所闡述之裝置及/或製程之至少一部分可經由一合理量之實驗被整合入一資料處理系統內。熟習此項技術者將認識到一典型資料處理系統一般包括以下裝置中之一者或多者:一系統單元外殼、一視訊顯示裝置、例如揮發性及非揮發性記憶體之一記憶體、例如微處理器及數位信號處理器之處理器、例如作業系統、驅動器、圖形使用者介面及應用程式之計算實體、例如一觸摸板或屏幕之一個或多個互動裝置,及/或包括回饋環路及控制電機(例如,用於感測位置及/或速率之回饋;用於移動及/或調整元件及/或數量之控制電機)之控制系統。可利用任一適合市場上可購得元件(例如通常發現於資料計算/通信及/或網路計算/通信系統中彼等元件)來實施一典型資料處理系統。
本文所闡述之標的物有時圖解說明含在不同其他組件內之不同元件或與不同其他組件件連接之不同組件。應理解,此等所繪示架構僅係例示性,且實際上可實施達成相同功能性之諸多其他架構。在一概念意義上,達成相同功能性之任一組件配置皆有效地「相關聯」以便達成所期望之功能性。因此,可將本文中經組合以達成一特定功能性之任何兩個組件可視為彼此「相關聯」以便達成所期望之功能性而無論架構或中間元件如何。同樣,如此相關聯之任何兩個組件亦可視為彼此「可以運作方式連接」或「可以運作方式耦合」以達成所期望之功能性,且能夠如此相關聯之任何兩個組件亦可視為彼此「可以運作方式耦合」以達成所期望之功能性。可以運作方式耦合之具體實例包括但不限於光學耦合以准許光學光舉例而言經由一光學管或光纖、實體互動組件及/或可以無線方式互動之組件及/或可以無線方式互動之元件及/或可在邏輯上互動之元件及/或可在邏輯上互動之元件透射。
關於本文中大致使用任一複數及/或單數術語,熟習此項技術者可根據上下文及/或應用將複數轉變成單數及/或將單數轉變成複數。為清晰起見,本文明確地闡釋各種單數/複數變更。
熟習此項技術者將理解,一般而言本文所使用及尤其係在隨附申請專利範圍(例如,隨附申請專利範圍之主體)中所使用之術語通常意欲為「開放」術語(例如,術語「包含(including)」應解釋為「包含但不限於」,術語「具有(having)」應解釋為「至少具有」、術語「包括(includes)」應解釋為「包含但不限於」等等)。熟習此項技術者將進一步理解,若意欲使一所引入申請專利範圍敍述為一具體數目,則將在申請專利範圍中明確敍述此一意圖,而在無此敍述時,則不存在此意圖。例如,為幫助理解,以下隨附申請專利範圍可含有使用引入性片語「至少一個(at least one)」及「一個或多個(one or more)」來引入申請專利範圍敍述。然而,使用此等片語不應理解為暗示以不定冠詞「一(a)」或「一(an)」來引入申請專利範圍敍述將含有此引入申請專利範圍敍述之任一特定申請專利範圍限制於僅含有一個此敍述之發明,即使當同一申請專利範圍包含引入性片語「一個或多個(one or more)」或「至少一個(at least one)」及例如「一(a)」或「一(an)」等不定冠詞時也如此(例如,「一(a)」及/或「一(an)」通常應解釋為意指「至少一個(at least one)」或「一個或多個(one or more)」);此對用於引入申請專利範圍敍述之定冠詞之使用同樣適用。另外,即使明確地敍述了所引入申請專利範圍之一具體數目,熟習此項技術者亦將認識到,此敍述通常應解釋為意指至少所敍述之數目(例如,「兩個敍述」之無修飾敍述,而無其他修飾語,通常意指至少兩個敍述,或兩個或更多個敍述)。此外,在其中使用類似於「A、B及C中之至少一者」之一習語之彼等例項中,一般而言此一構造意欲指熟習此項技術者將理解該習語之含義(例如,「具有A、B及C中之至少一者之一系統」將包含但不限於僅具有A、僅具有B、僅具有C、同時具有A及B、同時具有A及C、同時具有B及C及/或同時具有A、B及C等等之系統)。在其中使用類似於「A、B或C中之至少一者」之一習語之彼等例項中,一般而言此一構造意欲指熟習此項技術者將理解該習語之含義(例如,「具有A、B或C中之至少一者之一系統」將包括但不限於僅具有A、僅具有B、僅具有C、同時具有A及B、同時具有A及C、同時具有B及C及/或同時具有A、B及C等等之系統)。熟習此項技術者將進一步理解幾乎任一表示兩個或更多個替代術語之轉折字及/或片語(無論是在說明中、申請專利範圍中或圖式中)應被理解為涵蓋包含該等術語中之一者、該等術語中之任一者或兩個術語之可能性。舉例而言,片語「A或B」將被理解為包含「A」或「B」或「A及B」之可能性。
所有參考(包含但不限於專利、專利申請案及非專利文獻)皆以全文引用方式併入本文中。
儘管本文已揭示各種態樣及實施例,但熟習此項技術者將明瞭其他態樣及實施例。本文所揭示之各種態樣及實施例皆出於說明之目的且並不意欲具有限制性,其中真實範疇及精神皆係由以下申請專利範圍指示。
1...層間介電層
2...金屬層
3...金屬間介電層
4...金屬層
5...金屬間介電層
6...金屬層
7...金屬間介電層
8...鈍化層
9...鈍化層
10...鈍化層
11...平坦化層
12...濾色片
13...間隔件
14...微透鏡
15...覆蓋層
20...基板
圖1顯示一習用影像感測器之一橫截面圖;
圖2顯示具有一微透鏡之一影像感測器之一實施例之一橫截面圖;
圖3-1至圖3-19顯示用於形成一實施例之影像感測器之光管之不同步驟;
圖4顯示在形成一實施例之影像感測器之光管期間生長具有一PN接面之一奈米線之步驟;
圖5顯示在形成一實施例之影像感測器之光管期間生長具有一PIN接面之一奈米線之步驟;
圖6顯示一實施例之影像感測器之一單個腔內之一奈米線陣列之一實施例;及
圖7顯示含有本文所揭示之實施例之影像感測器之一裝置之一示意性俯視圖,每一影像感測器具有表示互補色彩之兩個輸出。
1...層間介電層
2...金屬層
3...金屬間介電層
4...金屬層
5...金屬間介電層
6...金屬層
7...金屬間介電層
8...鈍化層
9...鈍化層
10...鈍化層
11...平坦化層
Claims (83)
- 一種光偵測裝置,其包括一光學管,該光學管包括一核心及一包覆層(cladding),該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心既作為用以透射(transmit)高達(up to)該選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件;其中該核心之一折射指數大於該包覆層之一折射指數;其中該核心包括一波導(waveguide);其中該選擇性波長係該波導之直徑之一函數。
- 如請求項1之光偵測裝置,其中該主動元件係一光電二極體、一電荷儲存電容器或其組合。
- 如請求項2之光偵測裝置,其中該裝置係一影像感測器。
- 如請求項1之光偵測裝置,其中該核心包括一波導,該波導包括一半導體材料。
- 如請求項4之光偵測裝置,其進一步包括在該波導周圍之一鈍化層。
- 如請求項4之光偵測裝置,其進一步包括在該波導周圍之一金屬層。
- 如請求項5之光偵測裝置,其進一步包括在該鈍化層周圍之一金屬層。
- 如請求項1之光偵測裝置,其中該裝置不包括濾色片或 IR濾光片。
- 如請求項1之光偵測裝置,其中該光學管係圓形、非圓形或圓錐形。
- 如請求項1之光偵測裝置,其進一步包括至少一對金屬觸點,其中該等金屬觸點中之至少一者與該波導接觸。
- 如請求項1之光偵測裝置,其中該光學管經組態以在無一濾色片或IR濾光片之情形下藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長。
- 如請求項4之光偵測裝置,其中該波導經組態以轉換透射穿過該波導之該電磁輻射之能量且產生電子電洞對(激子(excitons))。
- 如請求項12之光偵測裝置,其中該波導包括經組態以偵測該波導中所產生之該等激子之一PIN接面。
- 如請求項12之光偵測裝置,其進一步包括在該波導周圍之一絕緣體層及在該絕緣體層周圍之一金屬層以形成一電容器,該電容器經組態以收集該波導中所產生之該等激子並將電荷儲存於該電容器中。
- 如請求項14之光偵測裝置,其進一步包括連接至該金屬層及波導之金屬觸點,以控制並偵測儲存於該電容器中之該電荷。
- 如請求項1之光偵測裝置,其中該包覆層係用以透射該電磁輻射束中不透射穿過該核心之波長之一通道。
- 如請求項1之光偵測裝置,其中該包覆層包括一被動波 導。
- 如請求項16之光偵測裝置,其進一步包括一週邊光敏元件,其中該週邊光敏元件以可運作方式耦合至該包覆層。
- 如請求項1之光偵測裝置,其中該光學管之一電磁輻射束接收端包括一彎曲表面。
- 如請求項18之光偵測裝置,其中該週邊光敏元件位於一基板上或位於一基板內。
- 如請求項1之光偵測裝置,其中該核心及該包覆層位於包括一電子電路之一基板上。
- 如請求項1之光偵測裝置,其進一步包括在該光學管上方之一透鏡結構或一光學耦合器,其中該透鏡結構或該光學耦合器以可運作方式耦合至該光學管。
- 如請求項22之光偵測裝置,其中該透鏡結構或該光學耦合器包括一彎曲表面以將該電磁輻射以通道方式傳輸至該光學管中。
- 如請求項1之光偵測裝置,其進一步包括一濾色片或IR濾光片。
- 如請求項1之光偵測裝置,其進一步包括環繞該光學管之一堆疊,該堆疊包括嵌入於介電層中之金屬層,其中該等介電層具有比該包覆層之折射指數低之一折射指數。
- 如請求項25之光偵測裝置,其中該堆疊之一表面包括一反射表面。
- 如請求項1之光偵測裝置,其中該核心包括一第一波導且該包覆層包括一第二波導。
- 如請求項1之光偵測裝置,其中該包覆層基本上不吸收光。
- 如請求項1之光偵測裝置,其中該包覆層具有自約1.4至約1.6之一折射指數。
- 如請求項22之光偵測裝置,其中該透鏡結構或該光學耦合器包括一第一開口及一第二開口以及在該第一開口與該第二開口之間延伸之一連接表面,其中該第一開口大於該第二開口。
- 如請求項30之光偵測裝置,其中該連接表面包括一反射表面。
- 如請求項1之光偵測裝置,其中該裝置藉由適當組合在該核心及該包覆層中所偵測之電磁輻射之能量來解析(resolve)該電磁輻射中所含有之黑色及白色或發光資訊。
- 一種複合光偵測器,其包括至少兩個不同裝置,每一裝置包括一光學管,該光學管包括一核心及一包覆層,該光學管經組態以藉由該核心及該包覆層以一選擇性波長分離入射於該光學管上之一電磁輻射束之波長,其中該核心經組態以既作為用以透射高達該選擇性波長之波長之一通道且作為用以偵測透射穿過該核心之該等高達該選擇性波長之波長之一主動元件,且該複合光偵測器經組態以重構(reconstruct)該電磁輻射束之一波長譜(a spectrum of wavelengths);其中在每一裝置中該核心之一折射指數大於該包覆層之一折射指數;其中該核心包括一第一波導,該第一波導具有該選擇性波長以使得波長超過該選擇性波長之電磁輻射透射穿過該包覆層。
- 如請求項33之複合光偵測器,其中該至少兩個不同裝置中之每一者之該核心之該選擇性波長係不同以使得該至少兩個不同裝置以不同選擇性波長分離入射於該複合光偵測器上之該電磁輻射束。
- 如請求項34之複合光偵測器,其中該包覆層包括一第二波導,該第二波導准許波長超過該選擇性波長之電磁輻射保持於該包覆層內且被透射至一週邊光敏元件。
- 如請求項35之複合光偵測器,其中該包覆層在該包覆層之一電磁輻射束發射端處之一橫截面積大致等於該週邊光敏元件之一面積。
- 如請求項33之複合光偵測器,其進一步包括環繞至少兩個不同光學感測器中之每一者之該光學管之一金屬與非金屬層堆疊。
- 如請求項33之複合光偵測器,其中該包覆層基本上不吸收光。
- 如請求項33之複合光偵測器,其中該包覆層具有自約1.4至約1.6之一折射指數。
- 如請求項33之複合光偵測器,其中複數個光偵測器配置於一方形網格、一六邊形網格上或一不同網格配置中。
- 如請求項33之複合光偵測器,其中該兩個不同裝置包括 不同直徑之核心。
- 如請求項33之複合光偵測器,其中該波長譜包括可見光之波長、IR之波長或其組合。
- 如請求項33之複合光偵測器,其中複數個光偵測器配置於一規則棋盤形佈置(tessellation)上。
- 如請求項33之複合光偵測器,其中該複合光偵測器偵測四個不同波長範圍之該電磁輻射之能量。
- 如請求項44之複合光偵測器,其中該四個不同波長範圍之該電磁輻射之該等能量經組合以構成紅色、綠色及藍色色彩。
- 一種複合光偵測器,其包括至少一第一裝置及一第二裝置,其中該第一裝置經組態以在無任何濾光片之情形下以一第一選擇性波長提供對入射於該光學管上之一電磁輻射束之一第一分離,該第二裝置經組態以在無任何濾光片之情形下以一第二選擇性波長提供對入射於該光學管上之該電磁輻射束之一第二分離,該第一選擇性波長不同於該第二選擇性波長,該第一裝置及該第二裝置中之每一者包括一核心,該核心既作為用以透射分別高達該第一選擇性波長及該第二選擇性波長之波長之一通道且亦作為用以偵測透射穿過該核心之該等分別高達該第一選擇性波長及該第二選擇性波長之波長之一主動元件,且該複合光偵測器重構該電磁輻射束之一波長譜;其中在該第一裝置及該第二裝置之每一者中該核心之一折射指數大於該包覆層之一折射指數;其中該第一裝置 包括一第一波導,該第一波導具有該第一選擇性波長以使得波長超過該第一選擇性波長之電磁輻射將不受該第一波導侷限,其中該第二裝置包括一第二波導,該第二波導具有該第二選擇性波長以使得波長超過該第二選擇性波長之電磁輻射將不受該第二波導侷限。
- 如請求項46之複合光偵測器,其中該第一選擇性波長不同於該第二選擇性波長。
- 如請求項47之複合光偵測器,其中該第一裝置進一步包括一第一波導,該第一波導准許波長大於該第一選擇性波長之電磁輻射保持於該第一波導內,且該第二裝置進一步包括一第二波導,該第二波導准許波長大於該第二選擇性波長之電磁輻射保持於該第二波導內。
- 如請求項46之複合光偵測器,其中該第一裝置及該第二裝置中之每一者包括一包覆層,該包覆層包括一光敏元件。
- 如請求項49之複合光偵測器,其進一步包括環繞該第一裝置及該第二裝置之一金屬與非金屬層堆疊。
- 如請求項46之複合光偵測器,其中該第一裝置包括其一直徑不同於該第二裝置之核心之直徑之一核心且該波長譜包括可見光之波長。
- 如請求項46之複合光偵測器,其中該第一裝置包括其一直徑不同於該第二裝置之核心之直徑之一核心且該波長譜包括可見光之波長、IR之波長或其組合。
- 如請求項46之複合光偵測器,其中複數個光偵測器配置 於一規則棋盤形佈置上。
- 如請求項46之複合光偵測器,其中該複合光偵測器經組態以偵測四個不同波長範圍之該電磁輻射之能量。
- 如請求項54之複合光偵測器,其中該四個不同波長範圍之該電磁輻射之該等能量經組合以構成紅色、綠色及藍色色彩。
- 如請求項46之複合光偵測器,其中該包覆層基本上不吸收光。
- 如請求項46之複合光偵測器,其中該包覆層具有自約1.4至約1.6之一折射指數。
- 一種用於製造一光偵測裝置之方法,其包含:獲得一包含一光電二極體及一第一保護層之基板,該第一保護層具有一預先決定的厚度;蝕刻一洞在該第一保護層以曝光該光電二極體之一表面以及沈積在該光電二極體之該曝光表面之一觸媒(catalyst)粒子;及生長在該光電二極體上具有一長度L之一奈米線,其中該長度L大於該保護層之該預先決定厚度。
- 如請求項58之方法,其中該觸媒包含金。
- 如請求項58之方法,進一步包含在生長該奈米線時摻雜該奈米線。
- 如請求項60之方法,其中該摻雜奈米線具有一p+ -i-n+ 結構。
- 如請求項61之方法,進一步包含環繞該奈米線形成一大 致上均勻之介電包覆層。
- 如請求項62之方法,進一步包含環繞該介電包覆層形成一金屬層。
- 如請求項63之方法,進一步包含塗佈該基板及具有一第二保護層之奈米線。
- 如請求項64之方法,進一步包含平坦化該第二保護層。
- 如請求項65之方法,其中該觸媒粒子在該平坦化期間被移開。
- 如請求項65之方法,進一步包含製作一電觸點至在該平坦化層上之該奈米線。
- 如請求項67之方法,其中該觸點包含銦錫氧化物(ITO)。
- 如請求項67之方法,進一步包含製作一在該第二保護層之頂部之微透鏡。
- 如請求項62之方法,其中該包覆層包含SiO2 、Si3 N4 或一包含Ge之介電材料。
- 一種用於製造一光偵測裝置之方法,其包含:獲得一包含一光電二極體及一保護層之基板;在該光電二極體之一表面沈積一觸媒粒子;在該光電二極體上製作一奈米線光學管,其中該光學管包含一奈米線核心及一包覆層;及以一保護塗層塗佈於該基板及該奈米線光學管。
- 如請求項71之方法,其中該觸媒包含金。
- 如請求項71之方法,進一步包含在生長該奈米線時摻雜該奈米線。
- 如請求項73之方法,其中該摻雜奈米線具有一p+ -i-n+ 結構。
- 如請求項74之方法,進一步包含環繞該奈米線形成一大致上均勻之介電包覆層。
- 如請求項75之方法,進一步包含環繞該介電包覆層形成一金屬層。
- 如請求項76之方法,進一步包含塗佈該基板及具有一保護層之奈米線。
- 如請求項77之方法,進一步包含平坦化該保護層。
- 如請求項78之方法,其中該觸媒粒子在該平坦化期間被移開。
- 如請求項79之方法,進一步包含製作一電觸點至在該平坦化層上之該奈米線。
- 如請求項80之方法,其中該觸點包含銦錫氧化物(ITO)。
- 如請求項80之方法,進一步包含製作一在該第二保護層之頂部之微透鏡。
- 如請求項71之方法,其中該包覆層包含SiO2 、Si3 N4 或一包含Ge之介電材料。
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WO2010056608A1 (en) | 2010-05-20 |
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US20130277538A1 (en) | 2013-10-24 |
US20160216523A1 (en) | 2016-07-28 |
TW201523844A (zh) | 2015-06-16 |
TWI562341B (en) | 2016-12-11 |
TW201034172A (en) | 2010-09-16 |
US8471190B2 (en) | 2013-06-25 |
US8274039B2 (en) | 2012-09-25 |
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