AU2001268756A1 - Mgzno based uv detectors - Google Patents

Mgzno based uv detectors

Info

Publication number
AU2001268756A1
AU2001268756A1 AU2001268756A AU6875601A AU2001268756A1 AU 2001268756 A1 AU2001268756 A1 AU 2001268756A1 AU 2001268756 A AU2001268756 A AU 2001268756A AU 6875601 A AU6875601 A AU 6875601A AU 2001268756 A1 AU2001268756 A1 AU 2001268756A1
Authority
AU
Australia
Prior art keywords
detectors
mgzno
mgzno based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001268756A
Inventor
Supab Choopun
Thirumalai Venkatesan
Ratnakar D. Vispute
Wei Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Maryland at Baltimore
Original Assignee
University of Maryland at Baltimore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Maryland at Baltimore filed Critical University of Maryland at Baltimore
Publication of AU2001268756A1 publication Critical patent/AU2001268756A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
AU2001268756A 2000-06-26 2001-06-26 Mgzno based uv detectors Abandoned AU2001268756A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21419600P 2000-06-26 2000-06-26
US60214196 2000-06-26
PCT/US2001/041124 WO2002001650A1 (en) 2000-06-26 2001-06-26 Mgzno based uv detectors

Publications (1)

Publication Number Publication Date
AU2001268756A1 true AU2001268756A1 (en) 2002-01-08

Family

ID=22798161

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001268756A Abandoned AU2001268756A1 (en) 2000-06-26 2001-06-26 Mgzno based uv detectors

Country Status (3)

Country Link
US (1) US7132668B2 (en)
AU (1) AU2001268756A1 (en)
WO (1) WO2002001650A1 (en)

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JP2006027929A (en) * 2004-07-13 2006-02-02 Toshiba Ceramics Co Ltd Substrate for growing electro-optic single crystal thin film and manufacturing method therefor
US7081371B1 (en) * 2004-09-02 2006-07-25 University Of Puerto Rico Fabrication of stable, wide-bandgap thin films of Mg, Zn and O
US7309644B2 (en) * 2004-11-29 2007-12-18 University Of Maryland, College Park System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays
CN1832667A (en) * 2005-03-11 2006-09-13 鸿富锦精密工业（深圳）有限公司 Casing of portable electronic device and manufacturing method thereof
JP5062422B2 (en) * 2005-11-24 2012-10-31 株式会社村田製作所 UV sensor
US7973379B2 (en) * 2005-12-26 2011-07-05 Citizen Holdings Co., Ltd. Photovoltaic ultraviolet sensor
TWI288234B (en) * 2006-06-13 2007-10-11 Ghitron Technology Co Ltd Multi-directional-absorbing ultraviolet sensor
US8275724B2 (en) * 2008-10-15 2012-09-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of improving system performance and survivability through changing function
WO2008045423A1 (en) * 2006-10-10 2008-04-17 Structured Materials Inc. Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices
CN100565941C (en) * 2008-08-21 2009-12-02 中国科学院长春光学精密机械与物理研究所 The method for preparing solar blind ultraviolet detector
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8835831B2 (en) * 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9000353B2 (en) * 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
JP2011151269A (en) * 2010-01-22 2011-08-04 Rohm Co Ltd Imaging device
CN103050498B (en) * 2012-12-28 2015-08-26 中山大学 A kind of micro-nano linear array structure ultraviolet avalanche photodetector and preparation method thereof
US9059417B1 (en) 2013-06-06 2015-06-16 University Of Central Florida Research Foundation, Inc. Photodetectors based on wurtzite MgZnO
CN103545397B (en) * 2013-10-29 2016-02-24 中国科学院化学研究所 Thin film ultraviolet detector and preparation method thereof and application
CN104504838A (en) * 2014-12-15 2015-04-08 长春理工大学 Ultraviolet flame detector adopting zinc oxide-based semiconductor film
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US10126165B2 (en) * 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
KR102446410B1 (en) * 2015-09-17 2022-09-22 삼성전자주식회사 Photoelectric device and electronic apparatus including the same
CN106997907B (en) * 2016-01-22 2019-04-05 中国科学院物理研究所 A kind of visible blind UV detector of high sensitivity
CN106997909B (en) * 2016-01-22 2019-04-05 中国科学院物理研究所 A kind of highly sensitive blind deep ultraviolet light detector of subsisting
JP6767774B2 (en) 2016-05-19 2020-10-14 ラピスセミコンダクタ株式会社 Semiconductor devices and methods for manufacturing semiconductor devices
EP3631299A1 (en) * 2017-05-30 2020-04-08 Carrier Corporation Semiconductor film and phototube light detector
CN109616529A (en) * 2018-12-07 2019-04-12 中国科学院长春光学精密机械与物理研究所 A kind of ultraviolet detector and preparation method thereof
CN110335907B (en) * 2019-07-17 2022-07-12 东莞市光钛科技有限公司 MgZnO/ZnO solar blind detector with vertical structure
US11049993B1 (en) * 2019-12-26 2021-06-29 National Chung-Shan Institute Of Science And Technology Method for preparing aluminum nitride-zinc oxide ultraviolet detecting electrode
CN111261735B (en) * 2020-03-19 2022-07-08 中国科学院长春光学精密机械与物理研究所 ZnMgO film, ultraviolet detector and preparation method thereof
CN112071949B (en) * 2020-08-04 2022-10-11 深圳大学 Ultraviolet detector and preparation method thereof
CN113314642B (en) * 2021-05-28 2022-06-21 吉林建筑大学 Preparation method of double-insulation-layer solar-blind ultraviolet photosensitive thin film transistor

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US4731881A (en) 1986-06-30 1988-03-15 The United States Of America As Represented By The Secretary Of The Navy Narrow spectral bandwidth, UV solar blind detector
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US5626670A (en) * 1994-10-03 1997-05-06 American Research Corporation Of Virginia Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films
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US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6104074A (en) 1997-12-11 2000-08-15 Apa Optics, Inc. Schottky barrier detectors for visible-blind ultraviolet detection
US6137123A (en) 1999-08-17 2000-10-24 Honeywell International Inc. High gain GaN/AlGaN heterojunction phototransistor
US6559736B2 (en) * 2000-07-13 2003-05-06 Rutgers, The State University Of New Jersey Integrated tunable surface acoustic wave with quantum well structure technology and systems provided thereby
US6423983B1 (en) * 2000-10-13 2002-07-23 North Carolina State University Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Also Published As

Publication number Publication date
US20030160176A1 (en) 2003-08-28
WO2002001650A1 (en) 2002-01-03
US7132668B2 (en) 2006-11-07

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