TWI470682B - 設置有半導體膜的基底及其製造方法 - Google Patents

設置有半導體膜的基底及其製造方法 Download PDF

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Publication number
TWI470682B
TWI470682B TW97135885A TW97135885A TWI470682B TW I470682 B TWI470682 B TW I470682B TW 97135885 A TW97135885 A TW 97135885A TW 97135885 A TW97135885 A TW 97135885A TW I470682 B TWI470682 B TW I470682B
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TW
Taiwan
Prior art keywords
single crystal
crystal semiconductor
substrate
semiconductor substrates
disk
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TW97135885A
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English (en)
Chinese (zh)
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TW200937508A (en
Inventor
山崎舜平
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1902—Preparing horizontally inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/24—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement by concurrent transfer of multiple parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW97135885A 2007-09-21 2008-09-18 設置有半導體膜的基底及其製造方法 TWI470682B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007245904 2007-09-21
JP2007245898 2007-09-21

Publications (2)

Publication Number Publication Date
TW200937508A TW200937508A (en) 2009-09-01
TWI470682B true TWI470682B (zh) 2015-01-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW97135885A TWI470682B (zh) 2007-09-21 2008-09-18 設置有半導體膜的基底及其製造方法

Country Status (4)

Country Link
US (1) US8822305B2 (enExample)
JP (1) JP5452900B2 (enExample)
CN (1) CN101393859B (enExample)
TW (1) TWI470682B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD209041S (zh) 2019-10-25 2020-12-21 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209200S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209201S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209199S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片

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JP5250228B2 (ja) * 2007-09-21 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI437696B (zh) * 2007-09-21 2014-05-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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US8432021B2 (en) * 2009-05-26 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
JP5760392B2 (ja) * 2009-11-04 2015-08-12 ボンドテック株式会社 接合方法、接合システムおよび半導体装置
JP5789798B2 (ja) * 2010-05-28 2015-10-07 ボンドテック株式会社 接合方法および接合システム
CN102593260A (zh) * 2012-03-13 2012-07-18 常州比太科技有限公司 用等离子激发形成氮化硅膜的方法
JP6245791B2 (ja) * 2012-03-27 2017-12-13 日亜化学工業株式会社 縦型窒化物半導体素子およびその製造方法
JP2014209091A (ja) * 2013-03-25 2014-11-06 ローム株式会社 半導体装置
CN108417523B (zh) * 2018-04-16 2020-08-04 歌尔股份有限公司 Led衬底的剥离方法
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US11443987B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside air gap dielectric
TWI850407B (zh) * 2020-06-19 2024-08-01 巴黎文理研究大學 用於基板上液體之經控制沉積的系統及方法、該系統的用途及藉由該方法獲得的產物
FR3114683B1 (fr) * 2020-09-25 2025-10-17 Semco Smartech France Support pour substrats semiconducteurs pour traitement PECVD avec forte capacité de chargement de substrats
CN112887895B (zh) * 2021-01-26 2022-06-07 苏州工业园区纳米产业技术研究院有限公司 一种调整mems麦克风吸合电压的工艺方法
TWI782703B (zh) * 2021-09-13 2022-11-01 錼創顯示科技股份有限公司 發光二極體結構及其製造方法
CN113782654B (zh) * 2021-09-13 2025-02-07 錼创显示科技股份有限公司 发光二极管结构及其制造方法
JP2024064422A (ja) * 2022-10-28 2024-05-14 沖電気工業株式会社 半導体素子の製造方法、半導体層支持構造体、および半導体基板
JP2024064494A (ja) * 2022-10-28 2024-05-14 沖電気工業株式会社 半導体素子の製造方法、半導体層支持構造体、および半導体基板

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD209041S (zh) 2019-10-25 2020-12-21 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209200S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209201S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片
TWD209199S (zh) 2019-10-25 2021-01-01 日商昭和電工材料股份有限公司 製造半導體裝置用的膜片

Also Published As

Publication number Publication date
TW200937508A (en) 2009-09-01
US20090079025A1 (en) 2009-03-26
CN101393859A (zh) 2009-03-25
JP2009094487A (ja) 2009-04-30
JP5452900B2 (ja) 2014-03-26
CN101393859B (zh) 2013-10-30
US8822305B2 (en) 2014-09-02

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