TWI469690B - 用於微滴捕捉器以防止極紫外線產生腔室內回濺之系統、方法與裝置 - Google Patents

用於微滴捕捉器以防止極紫外線產生腔室內回濺之系統、方法與裝置 Download PDF

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Publication number
TWI469690B
TWI469690B TW99110720A TW99110720A TWI469690B TW I469690 B TWI469690 B TW I469690B TW 99110720 A TW99110720 A TW 99110720A TW 99110720 A TW99110720 A TW 99110720A TW I469690 B TWI469690 B TW I469690B
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Taiwan
Prior art keywords
interface
droplets
extreme ultraviolet
target
chamber
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TW99110720A
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English (en)
Chinese (zh)
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TW201127215A (en
Inventor
喬治Ｏ 維斯晨庫
威廉Ｎ 派特洛
伊克爾Ｖ 佛門哥
理查Ｌ 山德史東
亞歷山大Ｉ 艾瑟夫
大衛Ｃ 布蘭特
喬書亞Ｊ 米勒
Original Assignee
艾司摩爾荷蘭股份有限公司
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0025—Systems for collecting the plasma generating material after the plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW99110720A 2009-04-09 2010-04-07 用於微滴捕捉器以防止極紫外線產生腔室內回濺之系統、方法與裝置 TWI469690B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16800009P 2009-04-09 2009-04-09
US16801209P 2009-04-09 2009-04-09
US16803309P 2009-04-09 2009-04-09
US12/720,190 US8138487B2 (en) 2009-04-09 2010-03-09 System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber

Publications (2)

Publication Number Publication Date
TW201127215A TW201127215A (en) 2011-08-01
TWI469690B true TWI469690B (zh) 2015-01-11

Family

ID=42933626

Family Applications (4)

Application Number Title Priority Date Filing Date
TW99110720A TWI469690B (zh) 2009-04-09 2010-04-07 用於微滴捕捉器以防止極紫外線產生腔室內回濺之系統、方法與裝置
TW104107599A TWI563880B (en) 2009-04-09 2010-04-07 Chamber and method of removing residue from a surface
TW099110717A TWI481315B (zh) 2009-04-09 2010-04-07 用於具有熱壁及冷收集器鏡之雷射生成電漿極紫外線腔室的系統、方法與裝置
TW099110719A TWI599269B (zh) 2009-04-09 2010-04-07 極紫外線光系統及產生極紫外線光之方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW104107599A TWI563880B (en) 2009-04-09 2010-04-07 Chamber and method of removing residue from a surface
TW099110717A TWI481315B (zh) 2009-04-09 2010-04-07 用於具有熱壁及冷收集器鏡之雷射生成電漿極紫外線腔室的系統、方法與裝置
TW099110719A TWI599269B (zh) 2009-04-09 2010-04-07 極紫外線光系統及產生極紫外線光之方法

Country Status (5)

Country Link
US (5) US8138487B2 (OSRAM)
JP (3) JP5684786B2 (OSRAM)
KR (3) KR101702413B1 (OSRAM)
TW (4) TWI469690B (OSRAM)
WO (3) WO2010117859A1 (OSRAM)

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