TWI467639B - 選擇性形成碳矽磊晶層 - Google Patents
選擇性形成碳矽磊晶層 Download PDFInfo
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- TWI467639B TWI467639B TW97138221A TW97138221A TWI467639B TW I467639 B TWI467639 B TW I467639B TW 97138221 A TW97138221 A TW 97138221A TW 97138221 A TW97138221 A TW 97138221A TW I467639 B TWI467639 B TW I467639B
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- Prior art keywords
- deposition
- source
- substrate
- gas
- etching
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- 230000015572 biosynthetic process Effects 0.000 title description 7
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 claims description 94
- 230000008021 deposition Effects 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 54
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 48
- 239000007789 gas Substances 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 43
- 229910052732 germanium Inorganic materials 0.000 claims description 40
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 40
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000002019 doping agent Substances 0.000 claims description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 25
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 24
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000460 chlorine Substances 0.000 claims description 13
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 5
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 90
- 239000012159 carrier gas Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 31
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 24
- 229910052707 ruthenium Inorganic materials 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 18
- 229910052684 Cerium Inorganic materials 0.000 description 16
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 16
- 229910052734 helium Inorganic materials 0.000 description 15
- 239000001307 helium Substances 0.000 description 15
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 238000005137 deposition process Methods 0.000 description 14
- 238000000407 epitaxy Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000002243 precursor Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 description 6
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- NCPHGZWGGANCAY-UHFFFAOYSA-N methane;ruthenium Chemical compound C.[Ru] NCPHGZWGGANCAY-UHFFFAOYSA-N 0.000 description 4
- YCOZIPAWZNQLMR-UHFFFAOYSA-N pentadecane Chemical compound CCCCCCCCCCCCCCC YCOZIPAWZNQLMR-UHFFFAOYSA-N 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- -1 during deposition Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- UYVWNPAMKCDKRB-UHFFFAOYSA-N 1,2,4,5-tetraoxane Chemical compound C1OOCOO1 UYVWNPAMKCDKRB-UHFFFAOYSA-N 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 2
- AWBIJARKDOFDAN-UHFFFAOYSA-N 2,5-dimethyl-1,4-dioxane Chemical compound CC1COC(C)CO1 AWBIJARKDOFDAN-UHFFFAOYSA-N 0.000 description 2
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- OLDOGSBTACEZFS-UHFFFAOYSA-N [C].[Bi] Chemical compound [C].[Bi] OLDOGSBTACEZFS-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 description 1
- YMEKHGLPEFBQCR-UHFFFAOYSA-N 2,2,3,3,5,5-hexachloro-1,4-dioxane Chemical compound ClC1(OC(C(OC1)(Cl)Cl)(Cl)Cl)Cl YMEKHGLPEFBQCR-UHFFFAOYSA-N 0.000 description 1
- IRTCJFCIQKNFPP-UHFFFAOYSA-N 2-methyl-1,4-dioxane Chemical compound CC1COCCO1 IRTCJFCIQKNFPP-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 description 1
- QISGROBHHFQWKS-UHFFFAOYSA-N [C].[Nb] Chemical compound [C].[Nb] QISGROBHHFQWKS-UHFFFAOYSA-N 0.000 description 1
- KIJXJCBYANQZLF-UHFFFAOYSA-N [Ce].[C] Chemical compound [Ce].[C] KIJXJCBYANQZLF-UHFFFAOYSA-N 0.000 description 1
- VMSKLDDPZGDWTO-UHFFFAOYSA-N [Y].[C] Chemical compound [Y].[C] VMSKLDDPZGDWTO-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 125000005626 carbonium group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- OWQWEJKPOUNPPG-UHFFFAOYSA-M chloro(dimethyl)gallane Chemical compound C[Ga](C)Cl OWQWEJKPOUNPPG-UHFFFAOYSA-M 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- VZZJVOCVAZHETD-UHFFFAOYSA-N diethylphosphane Chemical compound CCPCC VZZJVOCVAZHETD-UHFFFAOYSA-N 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000001360 methionine group Chemical group N[C@@H](CCSC)C(=O)* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Description
本發明的實施例大致有關於選擇性形成含矽和碳之磊晶層的方法和設備。特定實施例有關於選擇性形成半導體元件(例如,金屬氧化物半導體場效應電晶體(MOSFET)元件)中之n摻雜磊晶層的方法和設備。
流過MOS電晶體之通道的電流量直接與該通道中的載子遷移率成正比,而應用高遷移率MOS電晶體能使更多電流流動,並因此具有更快的電路性能。藉由在通道中產生機械應力能夠增加MOS電晶體通道中之載子遷移率。處於壓縮應變下的通道(例如,生長在矽上的矽鍺通道層)具有顯著增加的電洞遷移率以提供pMOS電晶體。處於拉伸應變下的通道(例如,生長在鬆弛矽鍺上的薄矽通道層)獲得顯著增加的電子遷移率以提供nMOS電晶體。
藉由形成一或多個碳摻雜的矽磊晶層,也能夠提供處於拉伸應變下的nMOS電晶體通道,該nMOS電晶體通道可以與pMOS電晶體中壓縮應變之SiGe通道互補。因而,碳摻雜的矽和矽鍺磊晶層能夠分別沉積在nMOS和pMOS的源極/汲極上。源極區域和汲極區域能夠是平坦的或者藉由選擇性Si乾蝕刻而凹陷。當適當製造時,覆蓋有碳摻雜之矽磊晶層的nMOS源極和汲極在通道中施加拉伸應力並增加nMOS驅動電流。
爲了利用碳摻雜的矽磊晶層在具有凹陷源極/汲極之nMOS電晶體的通道中獲得增加的電子遷移率,期望藉由選擇性沉積或藉由沉積後處理任一者在源極/汲極上選擇性形成碳摻雜的矽磊晶層。另外,期望碳摻雜的矽磊晶層包含替代C原子以在通道中導致拉伸應變。利用碳摻雜的矽源極和汲極中增大的替代碳含量能夠獲得較高的通道拉伸應變。
一般而言,低於100nm的CMOS(互補金屬氧化物半導體)元件要求接面深度小於30nm。選擇性磊晶沉積經常用來將含矽材料(例如,Si,SiGe和Si:C)的磊晶層(「磊晶層(epilayer)」)形成爲接面。選擇性磊晶沉積允許在介電質區域上沒有磊晶生長的情況下,在矽槽(silicon moat)上生長磊晶層。在半導體元件內,諸如升高的源極/汲極、源極/汲極延伸、接觸插塞(contact plug)或者雙極元件的底層沉積,可以使用選擇性磊晶。
典型選擇性磊晶製程包含沉積反應和蝕刻反應。在沉積製程期間,磊晶層形成在單晶表面上,而多晶材料層與/或非晶材料層沉積在至少第二層(諸如,存在的多晶層與/或非晶層)上。沉積和蝕刻反應以對於磊晶層和多晶層相對不同的反應速率同時發生。但是,一般以比磊晶層更快的速率蝕刻所沉積的多晶/非晶層。因此,藉由改變蝕刻氣體的濃度,淨選擇製程導致磊晶材料的沉積、多晶材料的有限沉積或者不沉積。例如,選擇性磊晶製程可以導致在單晶矽表面上形成含矽材料的磊晶層,而在間隔片(spacer)上不留下任何沉積。
在升高的源極/汲極和源極/汲極延伸特徵圖案的形成期間(例如,在含矽MOSFET(金屬氧化物半導體場效應電晶體)的形成期間),含矽材料的選擇性磊晶沉積已經成爲一種有用的技術。藉由蝕刻矽表面以形成凹陷的源極/汲極特徵圖案,然後用例如矽鍺(SiGe)材料的選擇性生長磊晶層填充經蝕刻的表面,來製造源極/汲極延伸特徵圖案。選擇性磊晶允許採用原位摻雜來使幾乎全部摻雜劑活化,從而省去了後退火製程。因此,藉由矽蝕刻和選擇性磊晶能夠精確地界定接面深度。另一方面,超淺源極/汲極接面不可避免地導致串聯電阻增加。此外,矽化物形成期間的接面耗損甚至增加更多的串聯電阻。爲了補償接面耗損,在接面上磊晶並選擇性生長升高的源極/汲極。一般而言,升高的源極/汲極是未摻雜矽。
然而,目前的選擇性磊晶製程具有一些缺點。爲保持當前磊晶製程期間的選擇性,在整個沉積製程中必須控制並調節前驅物的化學濃度以及反應溫度。如果矽前驅物供給不足,則蝕刻反應會占優勢,並且整個製程減慢。另外,會發生對基材特徵圖案的傷害性過度蝕刻。如果蝕刻劑前驅物供給不足,則沉積反應會占優勢,降低跨過基材表面形成單晶和多晶材料的選擇性。另外,目前的選擇性磊晶製程通常要求高反應溫度,諸如約800℃、1,000℃或較高的溫度。由於熱預算考慮和對於基材表面可能不受控制的氮化反應,在製造製程期間不期望這樣的高溫。此外,在較高製程溫度下藉由典型選擇性Si:C磊晶製程併入的大部分碳原子將佔據Si晶格的非替代(即,空隙)位置。藉由降低生長溫度,能夠獲得較高百分率(例如,在550℃的生長溫度下接近100%)的替代碳濃度,然而對於元件應用來說,不期望在這樣較低溫度下緩慢的生長速率,並且這種選擇性處理在較低的溫度下可能是不可行的。
矽碳磊晶的生產條件可以不相同於具有不同摻雜劑和摻雜濃度的磊晶。關注沉積期間將高濃度摻雜劑(例如,大於1020
原子/cm3
)併入Si:C磊晶中,因爲在沉積期間高濃度摻雜劑的併入減少了利用後續操作步驟(例如,離子摻雜)來增加摻雜劑濃度的需要。考慮到磊晶生產製程期間大量的變數,這些變數包括但不限於溫度、載氣類型、沉積氣體類型、蝕刻氣體類型、蝕刻氣體、沉積氣體和載氣每一個的流率和處理室壓力,因此對具有特定摻雜劑和摻雜劑濃度的具體磊晶的特定變數的選擇和最優化是不可預見的。因而,將高濃度摻雜劑併入Si:C磊晶中可能需要改變大量變數以獲得高質量磊晶。這將期望提供用於形成重度n摻雜之Si:C磊晶的製程。這些方法將有用於電晶體元件的生產。
本發明的一實施例關於形成和處理含矽磊晶層的方法。其他實施例關於製造包括含有矽和碳之磊晶層的電晶體元件之生產方法。
根據本發明的一實施例,一種在基材表面上磊晶形成碳矽膜的方法,包括在處理室中放置包括單晶表面和二次表面(secondary surface)的基材;在低於約600℃的溫度和沉積壓力下,將基材暴露於包含矽源、碳源和n型摻雜劑的沉積氣體;並在超過約600℃的溫度和至少約是暴露於沉積氣體期間之壓力的10倍壓力下,將基材暴露於包含氯化氫的蝕刻氣體,該方法造成在單晶表面上重度摻雜n型磊晶的選擇性沉積。
在一實施例中,摻雜劑包括磷源,例如磷化氫。在其他實施例中,摻雜劑包括砷源,例如砷化氫。摻雜劑可以包括砷化氫和砷化氫的組合。在一實施例中,蝕刻氣體只包含氯化氫。可以從氯化氫源氣體將氯化氫輸送給處理室。或者,可以藉由在處理室中混合氫源氣體和氯源氣體而在處理室中形成氯化氫。
在一實施例中,摻雜劑濃度至少約2×1020
原子/cm3
。根據一實施例,沉積期間的溫度是在約575℃到低於約600℃的範圍中。在一實施例中,蝕刻期間的溫度是在高於約600℃到低於約650℃的範圍中。
另一實施例包括在沉積期間流入二氯矽烷。在另一實施例中,在沉積期間流入氯化氫。在本發明的實施例中,在電晶體生產製程的製造步驟期間形成磊晶膜,且該方法還包括:在基材上形成閘極介電質;在閘極介電質上形成閘極電極;以及在電極相對側的基材上形成源極區域/汲極區域,並在源極區域/汲極區域之間界定通道區域。
上述內容已經很廣義地概括了本發明的某些特徵和技術優點。本領域的技術人員應當理解所公開的特定實施例可以容易地被用作在不偏離本發明範圍的條件下修改或設計其他結構或製程的基礎。本領域的技術人員還應當認識到這種等同解釋不偏離如所附申請專利範圍中描述的本發明精神和範圍。
本發明的實施例大致提供形成和處理含矽磊晶層的方法和設備。特定的實施例有關於在電晶體生產期間形成和處理磊晶層的方法和設備。
本文所用之磊晶沉積係指在基材上單晶層的沉積,從而沉積層的晶體結構與基材的晶體結構匹配。因此,磊晶層或膜是具有與基材的晶體結構匹配之晶體結構的單晶層或膜。磊晶層與塊基材和多晶矽層不相同。
在本申請中,術語「含矽」材料、化合物、膜或層應當被解釋爲包含至少含有矽的成分,並可以含有鍺、碳、硼、砷、磷化鎵與/或鋁。諸如金屬、鹵素或氫的其他元素通常以百萬分之(ppm)濃度併入含矽材料、化合物、膜或層中。含矽材料的化合物或合金可以用縮寫表示,諸如Si表示矽,SiGe表示矽鍺,Si:C表示矽碳而SiGeC用於表示矽鍺碳。所述縮寫既不表示具有化學計量關係的化學方程式,也不表示含矽材料的任何具體的還原/氧化態。
本發明的一或多個實施例大致提供在電子元件製造期間在基材的單晶表面上選擇性且磊晶沉積含矽材料的製程。將包含單晶表面(例如,矽或矽鍺)和至少二次表面(諸如,非晶表面與/或多晶表面(例如,氧化物或氮化物))的基材暴露於磊晶製程以在單晶表面上形成磊晶層,同時在二次表面上形成有限的多晶層或不形成多晶層。磊晶製程通常包括重復沉積製程和蝕刻製程的循環,直到生長了所欲厚度的磊晶層爲止。在共同轉讓並共同待審的美國專利申請序號No. 11/001,774中公開了示例性交替沉積和蝕刻製程,該美國專利申請被公佈爲美國專利申請公開號No.2006/0115934,發明名稱爲「Selective Epitaxy Process With Alternating Gas Supply」,在此藉由引用其全部內容作爲參考。
在一或多個實施例中,沉積製程包括暴露基材表面於至少含有矽源和載氣的沉積氣體中。沉積氣體還可以包含鍺源與/或碳源以及摻雜劑源。在具體的實施例中,沉積氣體包含足量的n型摻雜劑前驅物,這導致在磊晶膜中含有至少約1×1020
原子/cm3
的n型摻雜劑。在特定的實施例中,最終的磊晶膜包含至少約2×1020
原子/cm3
的n型摻雜劑,更具體地說,至少約5×1020
原子/cm3
的n型摻雜劑。本文所用之摻雜劑濃度的這些級別將被稱爲n型摻雜劑的重度摻雜。合適的n型摻雜劑的實例包括P、As和Sb。在沉積製程期間,磊晶層形成在基材的單晶表面上,而多晶/非晶層形成在諸如介電質、非晶與/或多晶表面的二次表面上,介電質、非晶與/或多晶表面被統稱爲「二次表面」。然後,基材暴露於蝕刻氣體中。一般而言,蝕刻氣體包含載氣和諸如氯氣或氯化氫的蝕刻劑。然而,根據一個或多個實施例,申請人確認了對重度摻雜的n型膜的有效蝕刻僅可以使用氯化氫進行蝕刻,而不是氯氣。蝕刻氣體除去在沉積製程期間所沉積的含矽材料。在蝕刻製程期間,多晶/非晶層以比磊晶層更快的速率被除去。因此,沉積和蝕刻製程的淨結果是在單晶表面上形成磊晶生長的含矽材料,同時將在二次表面上多晶/非晶含矽材料的生長減至最低程度,如果這種生長有的話。視需要可以重復沉積和蝕刻製程的循環以獲得含矽材料的所欲厚度。能夠被本發明的實施例沉積的含矽材料包括含有摻雜劑的矽、矽鍺、矽碳、矽鍺碳和上述之變體。
在製程的一個實例中,為了重度n摻雜磊晶,HCl氣體用作蝕刻劑充分地除去在二次表面上的多晶/非晶含矽材料。一般而言,由於蝕刻劑通常需要高溫來啟動,因此沉積製程可以在比蝕刻反應低的溫度下執行。根據一或多個實施例,已確認為了重摻雜n型磊晶,藉由在沉積之後提高壓力爲沉積壓力的至少約10倍,在特定的實施例中,爲大於沉積壓力的約20倍,在更特定的實施例中,爲大於沉積壓力的30倍,則有效蝕刻能夠在高於約600℃且低於約650℃的溫度下發生。
由於利用氬和氦作爲或氣的相關成本考慮,因此較佳載氣通常是氮。儘管通常氮比氬廉價得多,但根據本發明的一或多個實施例,尤其在甲基矽烷是矽源氣體的實施例中,較佳載氣是氬。使用氮氣作爲載氣可能產生的一個缺點是基材上的材料在沉積期間氮化。然而,需要例如高於800℃高溫的這種方式來活化氮氣。因此,根據一或多個實施例,在低於氮氣活化閾值的溫度下執行的製程中,能夠將氮氣用作惰性載氣。在沉積製程期間使用惰性載氣具有幾個作用。其中一個是,惰性載氣可以提高含矽材料的沉積速率。雖然氫氣可以當作載氣,但在沉積期間,氫氣具有吸附到基材或與之反應以形成氫終止(hydrogen-terminated)表面的傾向。氫終止表面比裸矽表面對磊晶生長的反應更慢。因此,惰性載氣的使用藉由不妨礙實施沉積反應而提高了沉積速率。
根據本發明的第一實施例,與連續式沉積相比,交替沉積和淨化步驟的全磊晶(blanket epitaxy)或非選擇性磊晶導致使用較高級矽烷生長之磊晶膜的結晶度改善。如在此使用的,「較高級矽烷」指二矽烷或較高級矽烷前驅物。在某些特定的實施例中,「較高級矽烷」指二矽烷、新五矽烷(NPS)或這些物質的混合物。示例性製程包括在處理室中裝載基材,並調節處理室內的條件到所需溫度和壓力。然後,開始沉積製程以在基材的單晶表面上形成磊晶層。然後結束沉積製程。然後,確定磊晶層的厚度。如果獲得了磊晶層的預定厚度,則結束磊晶製程。然而,如果沒有獲得預定厚度,則重復沉積和淨化步驟的循環直到獲得預定厚度。該示例性製程的進一步具體內容將在下面進行描述。
基材可被無圖案化或者圖案化。圖案化基材是包含形成在基材表面中或基材表面上之電子特徵圖案的基材。圖案化基材通常包含單晶表面和至少一個非單晶的二次表面,諸如介電質、多晶或非晶表面。單晶表面包含裸晶體基材或沉積的單晶層,該單晶層通常由諸如矽、矽鍺或矽碳的材料製成。多晶或非晶表面可以包含介電質材料和非晶矽表面,所述介電質材料是諸如氧化物或氮化物,具體地說是氧化矽或氮化矽。
在處理室中裝載基材之後,將處理室中的條件調節到預定溫度和壓力。使溫度滿足具體執行之製程的要求。一般而言,處理室在沉積期間維持在低於約600℃的溫度,而在蝕刻期間維持在高於約600℃的溫度。執行磊晶製程的適當溫度可以取決於用來沉積含矽材料的具體前驅物。在一個實例中,已經發現尤其是當壓力已經增加到沉積期間使用之壓力的至少10倍時,氯化氫(HCl)氣體很好地作為重度n摻雜之含矽材料的蝕刻劑。
處理室在沉積期間通常維持在約0.1Torr(托)到50Torr的壓力。在一個實施例中,沉積壓力維持在約10Torr。壓力在各製程步驟期中與之間可以波動,但一般維持不變。在蝕刻期間,處理室中的壓力上升至沉積期間使用之壓力的至少約10倍。
在沉積製程期間,基材暴露於沉積氣體中以形成磊晶層。基材暴露於沉積氣體中一段約0.5秒到約30秒的時間,例如,從約1秒到約20秒,更具體地,從約5秒到約10秒。在特定的實施例中,沉積步驟持續約10到11秒。沉積製程的特定暴露時間視後續蝕刻製程期間的暴露時間以及在製程中使用的具體前驅物和溫度而定。一般而言,基材暴露於沉積氣體中長到足以形成最大厚度的磊晶層。
在一或多個實施例中,沉積氣體至少包含矽源和載氣,並可以包含至少一個第二元素源,諸如碳源與/或鍺源。另外,沉積氣體還可以包含摻雜劑化合物以提供諸如硼、砷、磷、鎵與/或鋁的摻雜劑源。在另一實施例中,沉積氣體可以包含至少一種蝕刻劑,諸如氯化氫。氯化氫可以作爲氯化氫氣體輸送或者作爲單獨的氫氣和氯氣輸送,而氫氣和氯氣在處理室中反應來形成HCl。
矽源通常以從約5sccm到約500sccm的範圍的流率提供到處理室中,較佳約10sccm到約300sccm,更佳約50sccm到約200scmm,例如,約100sccm。在特定的實施例中,矽烷以約60sccm流入。沉積氣體中沉積含矽化合物有用的矽源包括矽烷、鹵化矽烷和有機矽烷。矽烷包括矽烷(SiH4
)和具有實驗式Six
H(2x+2)
的較高級矽烷,諸如二矽烷(Si2
H6
)、三矽烷(Si3
H8
)、四矽烷(Si4
H10
)和新五矽烷等。鹵化矽烷包括具有實驗式X’y
Six
H(2x+2-y)
的化合物,其中X’=F、Cl、Br或I,諸如六氯二矽烷(Si2
Cl6
)、四氯矽烷(SiCl4
)、二氯矽烷(Cl2
SiH2
)和三氯矽烷(Cl3
SiH)。有機矽烷包括具有實驗式Ry
Six
H(2x+2-y)
的化合物,其中R=甲基、乙基、丙基或丁基,諸如甲基矽烷((CH3
)SiH3
)、二甲基矽烷((CH3
)2
SiH2
)、乙基矽烷((CH3
CH2
)SiH3
)、甲基二矽烷((CH3
)Si2
H5
)、二甲基二矽烷((CH3)2
Si2
H4
)和六甲基二矽烷((CH3
)6
Si2
)。已經發現有機矽烷化合物在將碳併入沉積之含矽化合物中的實施例中是有利的矽源和碳源。根據一或多個實施例,含氬載氣中的甲基矽烷是較佳的含矽源和載氣組合。
矽源通常與載氣一起提供到處理室內。載氣具有從約1slm(標準升每分鐘)到約100slm的流率,例如,從約5slm到約75slm,更具體地,從約10slm到約50slm,例如,約10slm。載氣可以包含氮氣(N2
)、氫氣(H2
)、氬氣、氦氣和上述之組合。較佳係惰性載氣,其包含氮氣、氬氣、氦氣和上述之組合。可以根據磊晶製程期間所使用的前驅物與/或製程溫度來選擇載氣。在整個沉積和蝕刻各個步驟期間,載氣通常是相同的。然而,一些實施例可以在具體步驟中使用不同載氣。
一般而言,在以低溫(例如,<800℃)製程爲特徵的實施例中,氮氣被用作載氣。部分由於在蝕刻製程中使用氯氣的緣故,因此可以採用低溫製程。氮氣在低溫沉積製程期間保持惰性。因此,在低溫製程期間氮不會被併入所沉積的含矽材料中。另外,氮載氣不會如同氫載氣那樣形成氫終止表面。因氫載氣在基材表面上的吸附而形成的氫終止表面抑制含矽層的生長速度。最後,由於氮氣比氫氣、氬氣和氦氣廉價得多,因此低溫製程可以具有利用氮氣作爲載氣的經濟上優勢。儘管有經濟上優勢,但根據某些實施例,較佳載氣是氬氣。
所使用的沉積氣體還包含至少一個第二元素源,諸如碳源與/或鍺源。在沉積期間碳源可以添加到處理室中,與矽源和載氣形成例如矽碳材料的含矽化合物。碳源通常以從約0.1sccm到約40sccm範圍的流率提供到處理室中,例如,約3sccm到約25sccm,更具體地,約5sccm到約25sccm,例如,約10sccm。碳源可以在氬或氮氣中稀釋爲5%並以750sccm的流率流入。用於沉積含矽化合物的碳源包括有機矽烷、乙基、丙基和丁基的烷烴、烯烴和炔烴。這樣的碳源包括甲基矽烷(CH3
SiH3
)、二甲基矽烷((CH3
)2
SiH2
)、乙基矽烷(CH3
CH2
SiH3
)、甲烷(CH4
)和乙烯(C2
H4
)、乙炔(C2
H2
)、丙烷(C3
H8
)、丙烯(C3
H6
)、丁炔(C4
H6
)等。磊晶層的碳濃度是從約200ppm到約5原子%的範圍,優選從約1原子%到約3原子%,例如1.5原子%。在一實施例中,碳濃度可以在磊晶層內梯度化,較佳係具有在磊晶層開始部分的濃度低於磊晶層最後部分的濃度之梯度。或者,鍺源和碳源都可以在沉積期間添入到處理室內,與矽源和載氣形成諸如矽碳或矽鍺碳材料的含矽化合物。
或者,鍺源可以添加到處理室內,與矽源和載氣形成例如矽鍺材料的含矽化合物。鍺源通常以從約0.1sccm到約20sccm的範圍的流率提供到處理室內,較佳約0.5sccm到約約10sccm,更佳約1sccm到約5sccm,例如,約2sccm。用於沉積含矽化合物的鍺源包括鍺烷(GeH4
)、較高級鍺烷和有機鍺烷。較高級鍺烷包括具有實驗式Gex
H(2x+2
)的化合物,諸如二鍺烷(Ge2
H6
)、三鍺烷(Ge3
H8
)和四鍺烷(Ge4
H10
)等。有機鍺烷包括諸如甲基鍺烷((CH3
)GeH3
)、二甲基鍺烷((CH3
)2
GeH2
)、乙基鍺烷((CH3
CH2
)GeH3
),甲基二鍺烷((CH3
)Ge2
H5
),二甲基二鍺烷((CH3
)2
Ge2
H4
)和六甲基二鍺烷((CH3
)6
Ge2
)的化合物。已經發現鍺烷和有機鍺烷化合物在向所沉積的含矽化合物(即SiGe和SiGeC化合物)中注入鍺和碳的實施例中是有利的鍺源和碳源。磊晶層中的鍺濃度是從約1原子%到約30原子%範圍,例如約20原子%。鍺濃度可以在磊晶層內梯度化,較佳係具有在磊晶層下部的濃度高於磊晶層上部的濃度之梯度。
沉積期間使用的沉積氣體還可以包含至少一種摻雜劑化合物以提供諸如硼、砷、磷、鎵或鋁的元素摻雜劑源。摻雜劑給所沉積的含矽化合物提供各種導電特性,例如電子元件所需之受控及預期路徑中的定向電子流。含矽化合物的膜被摻雜特定的摻雜劑以獲得所需的導電特性。在一個實例中,含矽化合物是摻雜n型,例如具有從約1020
原子/cm3
到約1021
原子/cm3
範圍的濃度的磷、銻與/或砷。在特定實施例中,摻雜劑濃度超過約2×1020
原子/cm3
。
摻雜劑源通常在沉積期間以從約0.1scmm到20sccm範圍的流率提供到處理室中,例如,約0.5sccm到約10sccm,更具體地說約1sccm到約5sccm,例如約3sccm。摻雜劑還可以包含砷化氫(AsH3
)、磷化氫(PH3
)和烷基磷化氫,諸如具有實驗式Rx
PH(3-x)
,其中R=甲基、乙基、丙基或丁基並且x=1,2或3。烷基磷化氫包括三甲基磷化氫((CH3
)3
P)、二甲基磷化氫((CH3
)2
PH)、三乙基磷化氫((CH3
CH2
)3
P)和二乙基磷化氫((CH3
CH2
)2
PH)。鋁和鎵摻雜劑源可以包括烷化與/或鹵化衍生物,諸如用實驗式RxMX(3-x)描述的,其中M=Al或Ga,R=甲基、乙基、丙基或丁基,X=Cl或F,並且x=0、1、2或3。鋁和鎵摻雜劑源的實例包括三甲基鋁(Me3
Al)、三乙基鋁(Et3
Al)、二甲基氯化鋁(Me2
AlCl)、氯化鋁(AlCl3
)、三甲基鎵(Me3
Ga)、三乙基鎵(Et3
Ga)、二甲基氯化鎵(Me2
GaCl)和氯化鎵(GaCl3
)。
根據一或多個實施例,在沉積製程結束之後,可以使用淨化氣體或載氣吹掃處理室,以及/或者利用真空泵排空處理室。淨化與/或排空製程除去剩餘沉積氣體、反應副產物和其他污染物。在示例性實施例中,可以通過以約5slm流入載氣約10秒來淨化處理室。可以重復多次沉積和淨化的循環。在一實施例中,重復沉積和淨化循環約90次。
在本發明的另一個態樣中,全沉積或非選擇性沉積利用較高級矽烷(例如,二矽烷和較高級矽烷)源在低溫(例如,低於約600℃或更低的溫度)下執行。這有助於在沉積步驟(非選擇性沉積)期間在介電質表面(諸如,氧化物和氮化物)上的非晶(而不是多晶)生長,這樣就有利於利用後續蝕刻步驟去除介電質表面上的層,並將對生長在晶體基材上的單晶層的損壞減小至最小程度。
在共同轉讓的美國專利申請序列號No. 10/688,797、公佈爲美國專利申請公開號No. 2004/0224089中描述了在磊晶膜的形成中使用新五矽烷,該美國專利申請的發明名稱爲「Silicon-Containing Layer Deposition with Silicon Compounds」,在此引用其全部內容作爲參考。新五矽烷((SiH3
)4
Si)是含有與矽原子鍵合的四個甲矽烷基(-SiH3
)基團的三級矽烷。與使用單矽烷作爲矽源氣體相比,使用較高級矽烷能夠在更低溫度下獲得較高的沉積速率,並且對於併入碳的含矽膜來說,能夠實現更多的替代碳原子併入。在執行的全沉積實驗中,比較在600℃的製程溫度下使用矽烷作爲矽源氣體,並使用氮氣作爲載氣以及甲基矽烷(在氫氣中稀釋爲1%)作爲矽碳源,在沉積的膜中50%的碳是替代碳。然而,使用較高級的矽烷,二矽烷形成的膜具有大於約90%的替代碳,而新五矽烷生成的膜具有接近100%的替代碳。
在一或多個實施例中,包括緊鄰處理室(例如,在離處理室小於約5英尺的範圍內,更具體地在離處理室小於約2或3英尺的範圍內)安裝之的新五矽烷安瓿的液體源櫃能夠獲得矽源較高的輸送速率,因此能夠獲得較高的沉積速率。
因此,本發明的實施例提供用於具有高替代碳濃度(>1%)的含矽膜(例如,Si:C膜)的選擇性磊晶製程,當磊晶膜生長在電晶體的凹陷源極/汲極時,該選擇性磊晶製程能夠用於形成N型MOSFET結構的拉伸應變通道。一般而言,由於高替代碳含量需要低溫製程,因此難以既獲得在Si:C磊晶中的高替代碳濃度(>1%),又獲得具有光滑形態的選擇性生長。根據本發明的一或多個實施例,這兩者都得以實現。
本發明的另一態樣關於原位磷摻雜和Si:C膜的選擇性磊晶沉積方法:一般而言,在矽沉積期間原位磷摻雜降低生長速率並且增加晶體膜的蝕刻速率,因此,這使得難以獲得選擇性。換句話說,難以獲得在基材的晶體表面上的晶體生長,而在介電質表面上沒有任何生長。另外,原位磷摻雜會使磊晶膜的結晶度變差。
根據一或多個實施例,所述方法遵循相繼的順序,然而,製程不限於在此描述的確切步驟。只要保持製程步驟的順序,可在各步驟之間插入例如其他製程步驟。現在將根據一或多個實施例來描述磊晶沉積的各個步驟。
在實驗中,發現在約600℃的溫度下,Cl2
蝕刻氣體對n型摻雜矽具有很強侵蝕性,這使其在高度n型摻雜基材以及高度n型摻雜矽碳膜上的使用受到限制。根據本發明的實施例,在小於約600℃的低溫下沉積重度P摻雜矽碳。在蝕刻期間,提高溫度和壓力並使用大於1slm的HCl氣流以獲得適宜的蝕刻速率和選擇性。獲得大於5×1020
原子/cm3
P的極高摻雜濃度,以及超過約1.5%的替代碳濃度。通常,這種高濃度摻雜需要離子佈植法。
在一個實例中,混合新五矽烷、矽烷、甲基矽烷和PH3
並輸送到處理室中,並且在575℃和10torr下非選擇性沉積在基材上。在蝕刻期間,溫度上升到625℃並且壓力升高到約爲沉積壓力30倍的300 torr。在蝕刻期間,HCl以18 slm流入以蝕刻沉積在介電質表面上的非晶膜。在非晶膜到磊晶膜之間獲得至少3:1蝕刻速率選擇性。重復該過程直到在公開矽區域上獲得具有約500-900埃所需厚度的選擇性高度P摻雜矽碳。獲得具有大於1.3%碳、95%替代率和超過3×1020
原子/cm3
的磷摻雜濃度的無缺陷矽碳磊晶。
在另一實例中,在非選擇性沉積期間,將50 sccm的二矽烷、150 sccm的矽烷和200 sccm的氬氣中5%的甲基矽烷、60 sccm的二氯矽烷(DCS)和225 sccm 的H2
中1%的PH3
混合並與5slm N2
載氣一起分配到處理室。在10torr的壓力下在基材上執行非選擇性沉積11秒。在蝕刻期間,溫度上升到625℃並且壓力上升到300托。在蝕刻期間,18slm HCl用於蝕刻沉積在介電質表面上的非晶膜。在約30秒的蝕刻後獲得無缺陷的矽碳磊晶。利用20個循環,在無圖案基材上獲得550埃厚度含有約1.4%碳的選擇性矽碳,具有大於約90%替代率和大於約5.2×1020
原子/cm3
的P摻雜劑。在圖案化的基材上重復相同配方獲得具有相似特徵850埃厚的無缺陷膜。
附加的實驗表明在蝕刻期間,在超過600℃的溫度和超過沉積壓力約10倍或者100托的壓力下,利用HCl足以有效蝕刻非晶材料。在現有技術中,由於需要低製程溫度,因此二矽烷被認爲不適合P摻雜的矽碳應用。在這種低溫下,一般認爲二矽烷不能夠提供足夠的沉積速率。然而,在我們的實驗中,獲得超過約600埃/分鐘的沉積速率。在沉積期間二氯矽烷或HCl的添加被觀察到有助於選擇性,如在美國專利申請序列號No.11/227,874、被公佈爲美國專利申請公開號No. US2006/0115933中所描述的。另外,觀察到二矽烷的高流量和二氯矽烷/HCl的添加劑可以有助於在圖案化基材上的積極載入(positive loading),導致在基材的晶體部分上形成較厚的磊晶層。
本發明的一或多個實施例提供在形成互補金屬氧化物半導體(CMOS)積體電路元件中特別有用的方法,並將在下文中對其描述。其他元件和應用也在本發明的範圍內。第1圖示出在典型CMOS元件中FET對之剖面圖的一部分。元件100包括在形成阱後以提供NMOS元件和PMOS元件的源極/汲極區域、閘極介電質和閘極電極的半導體基材。元件100可利用傳統半導體製程來形成,例如生長單晶矽,以及藉由溝槽蝕刻並在溝槽開口中生長或沉積介電質來形成淺溝槽隔離結構。關於形成這些各種結構的詳細過程在現有技術中公知,在此不再對其描述。
元件100包含半導體基材155(例如,摻雜有p型材料的矽基材),在基材155上的p型磊晶矽層165,界定在磊晶層165中的p型阱區域120和n型阱區域150,界定在p阱120中的n型電晶體(NMOS FET)110以及界定在n阱150中的p型電晶體(PMOS FET)140。第一隔離區域158使NMOS 110和PMOS 140電晶體電隔離,第二隔離區域160使一對電晶體110和140與基材155上的其他半導體元件電隔離。
根據本發明的一或多個實施例,NMOS電晶體110包括閘極電極122、第一源極區域114和汲極區域116。NMOS閘極電極122的厚度大小是可調整的,並可以根據與元件性能相關的考慮來進行調節。NMOS閘極電極122具有與N型元件的功函數對應的功函數。源極區域和汲極區域是在閘極電極122的相對兩側的n型區域。通道區域118插入在源極區域114和汲極區域116之間。閘極介電層112使通道區域118和閘極電極122分離。用於形成NMOS閘極電極122和介電層的製程在現有技術中公知,在此不再對其討論。
根據一或多個實施例,PMOS電晶體140包括閘極電極152、源極區域144和汲極區域146。PMOS閘極電極152的厚度大小是可以調整的,並可以根據與元件性能相關的考慮來進行調節。PMOS閘極電極152具有與P型元件的功函數對應的功函數。源極區域和汲極區域是在閘極電極152的相對兩側的p型區域。通道區域148插入在源極區域144和汲極區域146之間。閘極介電層142使通道區域148和閘極電極152分離。介電層142使閘極電極152和通道區域148電絕緣。應當理解第2圖所示和剛剛如上描述的電晶體110和140的結構僅是示例性的,材料、層等的各種變體在本發明的範圍內。
參照第2圖,其示出了第1圖的NMOS元件在源極/汲極區域上形成間隔片、例如矽化物層的層以及形成蝕刻終止層191之後更詳細內容的視圖。如將在下面進一步描述的,應當理解第1圖中所示的PMOS元件可以包含相似間隔片和層,可以調整它們的尺寸與/或組份以影響在PMOS元件的通道中產生的應力。然而,出於說明的目的,僅示出NMOS元件並對其進行詳細描述。
第2圖示出可以由合適的介電質材料形成的間隔片175,該間隔片175結合在包含閘極電極121的閘極119的周圍。還可以提供圍繞各間隔片175的偏移間隔片177。用於形成間隔片175和177的形狀、尺寸和厚度的製程在現有技術中公知,在此不再對其描述。金屬矽化物層179可以在在源極區域114和汲極區域116上形成。可以藉由諸如濺射或物理氣相沉積(PVD)等任何合適製程由諸如鎳、鈦或鈷等合適的金屬形成矽化物層179。矽化物層179可以擴散到下層表面的部分中。汲極區域116的升高由箭頭181示出,該升高表示從基材表面180到矽化物層179的頂部的距離。源極區域的小面(facet)表示爲傾斜表面。如本領域的技術人員將理解的,如上所述的示例性元件可以改進爲包含具有Si:C磊晶層的源極/汲極或者源極/汲極延伸,Si:C磊晶層可以根據在此描述的方法進行進一步的改進。
整個說明書中,參照「一實施例」、「某些實施例」、「一或多個實施例」或「實施例」意指與該實施例相關描述的特定特徵、結構、材料或性質被包含在本發明的至少一個實施例中。因此,在整個說明書中的各處位置的諸如「在一或多個實施例中」、「在某些實施例中」、「在一實施例中」或「在實施例中」的詞組形式不需要參照本發明的同一實施例。另外,在一或多個實施例中,可以用任何合適的方式對特定的特徵、結構、材料或性質組合。不應當認爲上述方法的描述次序是限制性的,並且方法可以在省略或添加的情況下,採用不按次序的所述操作。
將理解上述描述意在是例證性的,而不是限制性的。對於本領域的技術人員來說,通過回顧上述描述許多其他實施例將顯而易見。因此,本發明的範圍,將參照所附申請專利範圍,以及所述申請專利範圍所指定的等同物的全部範圍來確定。
100...元件
110...n型電晶體
112...介電層
114、144...源極區域
116、146...汲極區域
118、148...通道區域
119...閘極
120...p型阱區域
121、122、152...閘極電極
140...p型電晶體
142...閘極介電層
150...n型阱區域
155...半導體基材
158、160...隔離區域
165...磊晶矽層
175...間隔片
177...偏移間隔片
179...矽化物層
180...基材表面
181...箭頭
183...小面
191...蝕刻終止層
因此爲了更詳細地理解本發明的以上所述特徵,將參照附圖中示出的實施例對以上簡要所述的本發明進行更具體描述。然而,應該注意,附圖中只示出本發明典型的實施例,因此不能認爲是對本發明範圍的限定,本發明可以允許其他等同的有效實施例。
第1圖是根據本發明一實施例的場效電晶體對的剖面圖;以及
第2圖是第1圖所示之具有附加層形成在元件上的NMOS場效電晶體之剖面圖。
110...n型電晶體
112...介電層
114...源極區域
116...汲極區域
118...通道區域
119...閘極
120...p型阱區域
121...閘極電極
155...半導體基材
165...磊晶矽層
175...間隔片
177...偏移間隔片
179...矽化物層
180...基材表面
181...箭頭
183...小面
191...蝕刻終止層
Claims (18)
- 一種在一基材上之一單晶表面上磊晶形成一矽碳膜的方法,其至少包括:將包括該單晶表面和二次表面(secondary surface)的該基材放入一處理室中;在一低於約600℃的沉積溫度和一沉積壓力下,暴露該基材於包含一矽源、一碳源和一n型摻雜劑的沉積氣體中;及在一超過約600℃與低於約650℃的蝕刻溫度和一至少約為該沉積壓力10倍且超過約100Torr的蝕刻壓力下,暴露該基材於一包含氯化氫的蝕刻氣體中,該方法造成選擇性沉積重度摻雜n型磊晶之該矽碳膜於該單晶表面上。
- 如申請專利範圍第1項所述之方法,其中該摻雜劑包含磷源和砷源之一或多者。
- 如申請專利範圍第2項所述之方法,其中該磷源包含磷化氫而該砷源包含砷化氫。
- 如申請專利範圍第2項所述之方法,其中該蝕刻氣體僅包含氯化氫。
- 如申請專利範圍第4項所述之方法,其中該氯化氫係從一氯化氫源氣體傳送到該處理室。
- 如申請專利範圍第4項所述之方法,其中該氯化氫係在該處理室中混合氫源氣體和氯源氣體後而在該處理室中形成。
- 如申請專利範圍第4項所述之方法,其中該矽源係選自單矽烷與一較高級(higher order)矽烷的一混合中。
- 如申請專利範圍第7項所述之方法,其中該較高級矽烷係選自二矽烷和新五矽烷(neo-pentasilane)。
- 如申請專利範圍第2項所述之方法,其中該摻雜劑水平是至少約2×1020 原子/cm3 。
- 如申請專利範圍第9項所述之方法,其中該摻雜劑水平是至少約5×1020 原子/cm3 。
- 如申請專利範圍第8項所述之方法,其中該沉積期間的溫度是在約575℃到低於約600℃的範圍中。
- 如申請專利範圍第11項所述之方法,其中該蝕刻期間的溫度是在高於約600℃到低於約650℃的範圍中。
- 如申請專利範圍第12項所述之方法,其中在沉積期間流入二氯矽烷。
- 如申請專利範圍第12項所述之方法,其中該碳源包含甲基矽烷。
- 如申請專利範圍第12項所述之方法,其中在沉積期間流入氯化氫。
- 如申請專利範圍第1項所述之方法,其中該磊晶膜係在電晶體生成製程之一製造步驟期間形成,且該方法更包括:在一基材上形成一柵極介電質;在該柵極介電質上形成一柵極電極;及在該電極相對側的基材上形成源極區域/汲極區域,並在該源極區域/汲極區域之間界定一通道區域。
- 如申請專利範圍第12項所述之方法,其中該磊晶膜係在電晶體生成製程之一製造步驟期間形成,且該方法更包括:在一基材上形成一柵極介電質;在該柵極介電質上形成一柵極電極;及在該電極相對側的基材上形成源極區域/汲極區域, 並在該源極區域/汲極區域之間界定一通道區域。
- 如申請專利範圍第1項所述之方法,其中該暴露於蝕刻氣體期間的壓力是該暴露於沉積氣體期間的壓力的至少約30倍。
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TW200943389A (en) | 2009-10-16 |
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