TWI454336B - 高溫真空吸座組件 - Google Patents
高溫真空吸座組件 Download PDFInfo
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- TWI454336B TWI454336B TW098101435A TW98101435A TWI454336B TW I454336 B TWI454336 B TW I454336B TW 098101435 A TW098101435 A TW 098101435A TW 98101435 A TW98101435 A TW 98101435A TW I454336 B TWI454336 B TW I454336B
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明之實施例大體上是關於半導體製造,且特別是有關用於處理腔室的真空吸座(chuck)組件。
積體電路(IC)製造時,基材經加熱達高溫而發生各種化學及/或物理反應。熱處理通常用來加熱基材。諸如退火之典型熱處理需在短時間內提供相當大量的熱能給基材,隨後快速冷卻晶圓以終止熱處理。目前採用的熱處理實例包括快速熱處理(rapid thermal processing;RTP)、脈衝(尖峰)退火、掃描式雷射退火技術和脈衝式雷射技術。加熱之真空吸座一般用來在熱處理期間將基材固定於處理腔室。
在整個積體電路製造過程中,基材表面的平面性非常重要,尤其是在脈衝式雷射退火處理期間,例如動態表面退火(dynamic surface annealing;DSA)處理。DSA處理時,雷射的放射線掃描基材,以促進退火處理。退火雷射的聚焦深度深受數種因素影響,包括晶圓表面的平面性。故托住晶圓的真空吸座支撐表面必須盡量平坦。一般已致力於平坦化真空吸座的整個支撐表面,以確保晶圓表面的平面性。此外,當吸座中心變熱而吸座周圍降溫時,加熱之真空吸座很可能往上彎曲。彎曲的吸座可能造成其上支撐的晶圓變形,而大幅降低晶圓表面的平面性。又,耦接加熱真空吸座的電連接器可能因處理腔室過熱而損壞或熔化。
因此,係期望有真空吸座組件和裝設真空吸座組件的處理腔室,以改進上述真空吸座的缺點。
本發明之實施例大體上是關於半導體製造,且特別是有關用於處理腔室的真空吸座組件。
根據本發明之一實施例,提供一真空吸座組件,其包含:一支撐主體,具有適於支托如晶圓之基材的一支撐表面;至少一支撐構件,用以支撐該支撐主體;以及至少一彈性構件,係與至少一支撐構件耦接。加熱期間,當支撐主體往上彎曲時,彈性構件提供控制力而將支撐主體往下拉及抵消吸座的上彎現象。
在另一實施例中,真空吸座組件更包含:一支撐主體,具有用於將基材支托於其上的支撐表面;複數個突出物,形成於支撐表面上,且突出物自支撐表面突出而在基材與支撐表面之間產生間隙;以及複數個通道,形成於支撐表面上,用以沿著基材背側均勻地分配減壓。
在又一實施例中,真空吸座組件更包含至少一電連接器組件,其係設置穿過中空軸桿,其中電連接器組件包含電連接器和插座,且該組件具有一或多個冷卻通道而在電連接器附近提供空氣冷卻,以避免電連接器過熱。
在再一實施例中,係提供裝設有真空吸座組件的處理腔室。處理腔室包含:一腔室架座(mount);一支撐主體,具有支撐表面而將基材支托於其上;複數個突出物,形成於支撐表面上,且突出物自支撐表面突出而在基材與支撐表面間產生間隙,其中各突出物具有平坦頂表面來接觸基材;複數個通道,係形成於支撐表面上而用以沿著基材背側均勻地分配減壓;至少一支撐構件,用以支撐該支撐主體;以及至少一彈性構件,耦接於腔室架座與至少一支撐構件之間。
本發明之實施例大體上是關於彈性構件,用以補償支撐主體因加熱而彎曲,以確保支撐表面的平面性。本發明之實施例更包含電連接器組件,其使用空氣冷卻以免電連接器於退火處理期間過熱及熔化。本發明之實施例更包含複數個突出物,形成於支撐主體的支撐表面上,以減少支撐表面與基材(如晶圓)間的表面接觸面積,進而確保基材的平面性及改善退火雷射的聚焦深度。
本發明將以雷射表面退火為例說明於下。然種種處理腔室,包括其他高溫操作型腔室,皆可受惠於所述技術,特別是使用雷射當作退火裝置的處理腔室,其為一部分的半導體晶圓處理系統,例如CENTURA系統,其可購自美國加州聖克拉拉之應用材料公司。當理解包括購自其他製造商的其他處理腔室亦能受惠於本發明。
參照第1及2圖,第1圖繪示根據本發明一實施例,具真空吸座組件150之處理腔室100的截面圖,第2圖繪示根據本發明一實施例之真空吸座組件150的截面圖。真空吸座組件150藉由維持基材平面性而協助改善基材處理。
在一實施例中,處理腔室100為雷射退火腔室。處理腔室100包含腔室主體102。腔室主體102具有側壁106、底部108和視窗110,其定義製程容積112。製程容積112一般經由側壁106的狹縫閥158進入,其協助基材140(以下稱之為基材140)移動進出腔室主體102。在一些實施例中,基材140為晶圓,例如用於半導體處理的晶圓。腔室主體102的側壁106和底部108通常是由單一鋁塊或其他與製程化學物質相容的材料製成。腔室100的底部108包含支撐件170,具有一或多個冷卻通道172形成於支撐件170中。一或多個冷卻通道172耦接冷卻流體供應器190,用以提供冷卻液體或氣體至一或多個卻通道172。支撐件170包含不銹鋼。在一實施例中,支撐件170具有面對基材背側的選擇性反射表面以增強發射率(emissivity)。一或多個支撐銷174耦接並延伸到支撐件170表面上方。腔室100的底部108具有抽氣口114穿設於其中,該抽氣口114係將製程容積112耦接至抽氣系統116,以協助控制製程容積112內的壓力及排放處理時的氣體和副產物。
視窗110由腔室主體102的側壁106支撐,且可移開來維修腔室100的內部空間。在一實施例中,視窗110包含例如為石英之材料。
製程氣體和其他氣體從耦接至氣體供應器120的氣源118引入製程容積112內。在一實施例中,氣源118設置以提供越過基材140表面之均勻氣流。在一實施例中,氣源設於側壁106中。
雷射130設於視窗110上方。可用於所述實施例的雷射進一步描述於共同受讓之美國專利申請案序號10/126,419、西元2002年4月18日申請、美國專利獲證號7,078,651、名稱為「利用掃描之熱通量製程(Thermal Flux Process by Scanning)」之申請案,其一併附上供作參考。在一實施例中,雷射130耦接至移動構件,而該移動構件係適於移動雷射130越過基材140表面。
真空吸座組件150置於腔室主體102的中心,且於處理期間支撐基材140。真空吸座組件150一般包括由軸桿154托住的支撐主體152,軸桿154延伸穿過腔室底部108。支撐主體152通常呈圓形,且其製作材料例如為石英、陶瓷(如氧化鋁)、或其組合。在一實施例中,支撐主體152內封有至少一嵌設的加熱元件156。加熱元件156(如電極或電阻式加熱元件)透過電連接器組件160耦接至功率源,及可控制地加熱支撐主體152和放置其上的基材140達預定溫度。在一實施例中,處理時,加熱元件156加熱基材140達約20℃~750℃。
第3圖繪示根據本發明一實施例之真空吸座組件的上視圖。支撐主體152具有用以支撐基材140於其上的上表面或支撐表面310。複數個突出物312形成在支撐表面310上,且在處理時基材140係支托在突出物312上。
在一實施例中,所有突出物312的高度相同且具有平坦化頂表面來接觸基材140背側,突出物312頂表面的總面積明顯小於支撐表面310的總面積,藉以減少支撐主體152與基材140間的接觸面積。由於支撐主體152與基材140間的接觸面積較小,故本實施例只需平坦化突出物,而不像傳統真空吸座需平坦化整個支撐表面310,如此可簡化支撐表面310的平坦化。另外,二者間的接觸面積小可降低支撐主體152之支撐表面310造成微粒污染的機率。在一實施例中,突出物312的高度為約10微米至約50微米,例如25微米,突出物312的寬度或直徑為約500微米至約5000微米。在一實施例中,複數個突出物312和支撐表面310為單一單元,且例如可藉由以機器加工或珠擊(bead-blasting)支撐主體152表面的方式形成。在另一實施例中,複數個突出物312乃個別形成,且利用此技藝已知的連接技術耦接支撐表面310,例如銅焊或使用黏著劑接合。在又一實施例中,突出物利用沉積製程和遮罩圖案而沉積於支撐表面。在一實施例中,支撐表面310的直徑為300毫米(mm)且具100-500個突出物,例如150-200個突出物,其約佔放置在其上之基材的背側表面面積的10%。在一實施例中,突出物312以實質線性方式排列遍及支撐表面310。在另一實施例中,突出物312按放射圖案從支撐表面中心放射排列。在又一實施例中,突出物按x-y網格圖案排列遍及支撐表面310。在一實施例中,支撐表面310的直徑為200mm。雖然圖中顯示其為圓形,但應理解支撐表面310可包含其他形狀,例如方形或矩形。
第4A-4C圖和第5A-5B圖繪示可用於本發明實施例之突出物的例示形狀。為了防止刮劃基材,突出物的形狀例如為具有平坦化頂表面313a的類半球狀突出物312a(第4A圖),其可形成在圓形基座(第4B圖)或方形基座上(第4C圖);或者,其可為具圓形頂表面的方形基座,例如具平坦化頂表面313b的突出物312b(第5A及5B圖)。上述突出物的形狀、尺寸和圖案僅為舉例說明,本發明不限於此。複數個突出物312可包含圓柱形架座、支柱、三角錐、圓錐、長方體、不同大小或其他形狀的突出物、或其組合,其將可改善雷射退火處理的聚焦深度。
回溯第1及3圖,突出物312在基材140與支撐主體152之支撐表面310間產生間隙D1
。在一實施例中,複數個通道314形成於支撐表面310且連接真空幫浦(未繪示),以於間隙D1
產生減壓而將基材140固定在支撐主體152。通道314最好形成為對稱圖案,以在基材140上施加均勻吸力。如第3圖所示,通道314的形成圖案是由圓形通道314a、直線通道314b和二對傾斜通道314c/314d與314e/314f組成。直線通道314b形成在圓形通道314a的直徑,傾斜通道314c/314d與314e/314f分別自直線通道314b延伸且互為鏡像。所述通道圖案僅為舉例說明,本發明不限於此。
回溯第1圖,支撐主體152的下表面162由一或多個支撐銷174支撐。軸桿154一般從支撐主體152的下表面162延伸通過腔室底部108,並將支撐主體152耦接至彈性構件166,以施加向下壓力至支撐主體152。套筒168環繞部分的軸桿154。在一實施例中,套筒168耦接至支撐件170的底部。套筒168的底部耦接基底176。基底176具有一或多個孔洞178,而一或多個支柱180延伸通過該一或多個孔洞178。一或多個支柱180位於軸桿154底部與腔室架座182之間。彈性構件166耦接於腔室架座182和支撐主體152之間。彈性構件166包含彈簧裝置,例如板片彈簧、壓縮彈簧、平面彈簧或錐形彈簧,然也可為任何提供預期特性的彈性或可彎折接線(wire)。當支撐主體152因加熱而往上彎曲時,彈性構件166提供控制力把支撐主體152往下拉,以免支撐主體152變形,進而確保基材140的平面性。
參照第6及7圖,第6圖繪示根據本發明一實施例之真空吸座組件的底部視圖,第7圖為根據本發明一實施例的第1圖之處理腔室100和真空吸座組件150的局部放大截面圖。真空吸座組件150的下表面162具有一或多個狹縫來接合一或多個支撐銷174。在一實施例中,下表面162具有各自接合獨立支撐銷174的三狹縫610、612、614。雖然圖中顯示三狹縫610、612、614接合三支撐銷174,但應理解任何足以支撐該支撐主體152的狹縫和支撐銷數量皆可採用。當彈性構件166提供控制力把支撐主體152往下拉以減少支撐主體152變形時,支撐銷174提供向上的力量抵抗支撐主體152。穿孔616、618、620設置穿過支撐主體152,以使得基材舉升銷(未繪示)穿過支撐主體152,以抬高或降低基材至支撐表面310。插入區630設在支撐主體152的下表面162中心。插入區630可用於溫度監測裝置,例如熱電偶和功率裝置(如電連接器)。
第8A圖為根據本發明一實施例之電連接器的截面圖,第8B圖為根據本發明一實施例,具加熱元件之真空吸座組件的局部截面圖。在一實施例中,真空吸座組件150更包含至少一電連接器組件160,其包含一或多個電連接器820a、820b和插座830,且內設一或多個冷卻通道810a、810b、810c。電連接器組件160設置穿過軸桿154,用以供應功率給吸座組件150。一或多個冷卻通道810a、810b、810c用來建立空氣路徑,以提供空氣冷卻於電連接器組件160附近,進而避免電連接器組件160於退火期間過熱或熔化。
電連接器組件160包含通常耦接電極連接器822的公連接器構件820a、820b,而電極連接器822耦接加熱元件156以供應功率給加熱元件156。電連接器組件160具有互補式插座830,用以容納公連接器構件820a、820b。互補式插座830包含母蕉型(banana)連接器來容納公銷型連接器構件820a、820b,其可為互補式彈性蕉型連接器。在一實施例中,一或多個冷卻通道810設置而鄰近於公銷型連接器820a、820b。一或多個冷卻通道810a、810b、810耦接至冷卻流體供應器840。冷卻流體供應器840包含冷卻流體,例如空氣、水、乙二醇、或其組合。電連接器組件160耦接電源供應器870。
根據前述實施例,本發明具有下列優點:藉著僅平坦化突出物頂表面而簡化吸座支撐表面的平坦化、藉由縮小支撐主體表面與基材間的表面接觸面積而減少微粒污染、藉由設置突出物和彈簧系統來確保支撐表面的平面性以改善退火雷射的聚焦深度、以及利用空氣冷卻來防止電連接器過熱或熔化。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100...腔室
102...主體
106...側壁
108...底部
110...視窗
112...製程容積
114...抽氣口
116...抽氣系統
118...氣源
120...氣體供應器
130...雷射
140...基材
150...吸座組件
152...支撐主體
154...軸桿
156...加熱元件
158...狹縫閥
160...電連接器組件
162...表面
166...彈性構件
168...套筒
170...支撐件
172...通道
174...支撐銷
176...基底
178...孔洞
180...支柱
182...架座
190...供應器
310、313a-b...表面
312、312a-b...突出物
314、314a-f...通道
610、612、614...狹縫
616、618、620...穿孔
630...插入區
810、810a-c...通道
820a-b...電連接器(構件)
822...電極連接器
830...插座
840...供應器
870...電源供應器
D1
...間隙
為讓本發明之上述特徵更明顯易懂,可配合參考實施例說明,其部分乃繪示如附圖式。須注意的是,雖然所附圖式揭露本發明特定實施例,但其並非用以限定本發明之精神與範圍,任何熟習此技藝者,當可作各種之更動與潤飾而得等效實施例。
第1圖繪示根據本發明一實施例,具真空吸座組件之處理腔室的截面圖;
第2圖繪示根據本發明一實施例之真空吸座組件的截面圖;
第3圖繪示根據本發明一實施例之真空吸座組件的上視圖;
第4A-4C圖繪示根據本發明一實施例之突出物的例示形狀;
第5A-5B圖繪示根據本發明一實施例之突出物的另一例示形狀;
第6圖繪示根據本發明一實施例之真空吸座組件的底部視圖;
第7圖為根據本發明一實施例,第1圖之真空吸座組件的局部放大截面圖;
第8A圖繪示根據本發明一實施例之電連接器的截面圖;以及
第8B圖繪示根據本發明一實施例,具加熱元件之真空吸座組件的局部截面圖。
為清楚說明,各圖中相同的元件符號代表相似的元件。應理解某一實施例揭露的元件當可併入其他實施例,在此不另外詳述。
100...腔室
102...主體
106...側壁
108...底部
110...視窗
112...製程容積
114...抽氣口
116...抽氣系統
118...氣源
120...氣體供應器
130...雷射
140...基材
150...吸座組件
152...支撐主體
154...軸桿
156...加熱元件
158...狹縫閥
160...電連接器組件
162...表面
166...彈性構件
168...套筒
170...支撐件
172...通道
174...支撐銷
176...基底
178...孔洞
180...支柱
182...架座
190...供應器
310...表面
312...突出物
Claims (14)
- 一種真空吸座(chuck)組件,包含:一支撐主體,具有用以將一基材支托於其上的一支撐表面;複數個突出物,形成於該支撐表面上,該些突出物自該支撐表面突出而在該基材與該支撐表面間產生一間隙;複數個通道,形成於該支撐表面上,以於該間隙中產生一減壓;一中空軸桿,用以支撐該支撐主體;以及至少一彈性構件,耦接於該中空軸桿,其中該至少一彈性構件設置在該中空軸桿下且當該支撐主體因變熱而往上彎曲時,該至少一彈性構件提供控制力而將該支撐主體往下拉。
- 如申請專利範圍第1項所述之真空吸座組件,其中該至少一彈性構件為至少一彈簧。
- 如申請專利範圍第1項所述之真空吸座組件,更包含:至少一電連接器組件,設置穿過該中空軸桿,其中該至少一電連接器組件具有一或更多個冷卻通道,用來建立一空氣路徑,藉以在該電連接器組件附近提供一空 氣冷卻。
- 如申請專利範圍第3項所述之真空吸座組件,其中該電連接器組件包含:一互補式插座,用以容納一公連接器構件,其中該一或多個冷卻通道設置而鄰近於該公連接器構件。
- 如申請專利範圍第1項所述之真空吸座組件,其中該些通道係形成為一對稱圖案,以在該基材上施加一均勻吸力。
- 如申請專利範圍第5項所述之真空吸座組件,其中該些通道係形成為一圖案,該圖案包含:一圓形通道;一直線通道;以及二對傾斜通道,其中該直線通道係形成在該圓形通道的一直徑(diametrically),該二對傾斜通道分別自該直線通道延伸且互為鏡像。
- 如申請專利範圍第1項所述之真空吸座組件,其中該些突出物的一高度為10微米~50微米。
- 如申請專利範圍第7項所述之真空吸座組件,其中該些突出物的一直徑為500微米~5000微米。
- 如申請專利範圍第8項所述之真空吸座組件,其中該些突出物的一高度為25微米。
- 如申請專利範圍第1項所述之真空吸座組件,其中該支撐表面上形成有100~500個突出物。
- 如申請專利範圍第1項所述之真空吸座組件,其中該些突出物呈一半球狀且具有一平坦化頂表面。
- 如申請專利範圍第3項所述之真空吸座組件,其中該支撐主體內封有至少一嵌設加熱元件,其中該加熱元件透過該電連接器組件而耦接至一功率源,且可控制地加熱該支撐主體和放置於其上的該基材達一預定溫度。
- 如申請專利範圍第12項所述之真空吸座組件,其中該些通道係形成為一圖案,該圖案包含:一圓形通道;一直線通道;以及二對傾斜通道,其中該直線通道形成在該圓形通道的一直徑,該二對傾斜通道分別自該直線通道延伸且互為鏡像。
- 如申請專利範圍第1項所述之真空吸座組件,其中該支撐主體的一下表面具有一或多個狹縫,用以接合一或 更多個支撐銷,其中當該彈性構件提供一控制力而將該支撐主體往下拉以減少該支撐主體的變形時,該一或更多個支撐銷提供一向上力量抵抗該支撐主體。
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US8698048B2 (en) | 2014-04-15 |
JP2011510488A (ja) | 2011-03-31 |
US20120205878A1 (en) | 2012-08-16 |
WO2009091640A2 (en) | 2009-07-23 |
EP2235748A2 (en) | 2010-10-06 |
EP2235748B1 (en) | 2017-09-06 |
US8198567B2 (en) | 2012-06-12 |
JP5481390B2 (ja) | 2014-04-23 |
EP2235748A4 (en) | 2011-08-10 |
TW200940246A (en) | 2009-10-01 |
WO2009091640A3 (en) | 2009-10-08 |
US20090179365A1 (en) | 2009-07-16 |
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