TWI823865B - 用於減少損壞的基板背面的基板支撐件 - Google Patents
用於減少損壞的基板背面的基板支撐件 Download PDFInfo
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Abstract
提供了基板支撐件和配備該基板支撐件的處理腔室的實施例。在一些實施例中,基板支撐件包括:支撐主體,其具有第一表面;一個或多個插孔,其延伸穿過第一表面並進入支撐主體;及一個或多個突起,將其分別設置在一個或多個插孔中的對應插孔內並從第一表面突出,其中一個或多個突起在第一表面上方至少部分地界定基本上平坦的支撐表面。亦揭示了消除背面晶圓損壞的方法。
Description
本揭示的實施例大體係關於半導體製造裝備。
在積體電路(IC)的製造中,可將基板加熱到高溫,而因此可發生各種化學及/或物理反應。熱處理通常用於加熱基板。典型的熱處理(諸如退火)需要在很短時間內對基板提供相對大量的熱能,並且隨後快速冷卻晶圓,以終止熱處理。在該等熱處理製程中,受熱卡盤用於固定在處理腔室中的基板。
為了一致的熱均勻性,需要在卡盤和基板之間的一定量的受控接觸,並且發明人已觀察到,受熱卡盤支撐表面與基板之間的接觸區域是有問題的並且可能導致對基板接觸支撐表面的一面的損壞,例如,當冷基板由於加熱而膨脹時。儘管已嘗試使接觸面積最小化,但是發明人已觀察到,藉由使接觸表面積最小化,增加的力被施加在基板上,將集中並增加對基板的下表面的損壞。發明人已觀察到,當基板是比接觸區域更軟的材料時,此種情況甚至會更有問題,因為基板的背面的額外損壞可能以凹痕或刮痕的形式發生。
發明人已進一步觀察到,繼續使用卡盤亦可能使基板支撐件翹曲及/或磨損在基板支撐件與基板之間的接觸區域。發明人已觀察到,翹曲和磨損對基板的完整性和平面性是有害的。
因此,發明人已提供了基板支撐件的改進的實施例。
提供了基板支撐件和配備該基板支撐件的處理腔室的實施例。在一些實施例中,基板支撐件包括:支撐主體,其具有第一表面;一個或多個插孔,其延伸穿過第一表面並進入支撐主體;及一個或多個突起,將其分別設置在一個或多個插孔中的對應插孔內並從第一表面突出,其中一個或多個突起在第一表面上方至少部分地界定基本上平坦的支撐表面。亦揭示了消除背面晶圓損壞的方法。
在一些實施例中,基板支撐件包括:支撐主體,其具有第一表面;一個或多個插孔,其延伸穿過第一表面並進入支撐主體;一個或多個突起,將其分別設置在一個或多個插孔中的相應插孔內並從第一表面突出,其中一個或多個突起在第一表面上方至少部分地界定基本上平坦的支撐表面;及至少一個通道,將其穿過支撐主體設置在第一表面上,以當將基板設置在基板支撐件上時,將氣體或真空供應到在第一表面與基板的背面之間所界定的空間。
在一些實施例中,處理腔室包括:腔室主體,其具有側壁和底部;及基板支撐件,將該基板支撐件設置在腔室主體內。基板支撐件是如本文所揭示的任何實施例中所述。
下文描述本發明的其他和進一步實施例。
100:處理腔室
101:腔室主體
102:基板支撐件
103:支撐表面
104:電極
105:電源
106:側壁
108:底部
110:蓋子
114:處理體積
116:支撐主體
118:第一表面
120:基板
122:軸
124:加熱元件
126:電連接器組件
127:通道
128:氣體源
129:真空源
130:電源
136:插孔
138:突起
206:側壁
208:底部
209:底部
212:開口
214:插孔體積
218:第一表面
219:塗層
222:密封帶
224:螺紋
236:插孔
247:插孔
306:螺紋軸
309:突起
310:支撐表面
312:突起
313:支撐表面
314:通氣孔
315:凸塊
336:插孔
414:通氣孔
418:第一表面
420:支撐表面
436:插孔
500:支撐主體
501:支撐表面
502:密封帶
504:凹槽
508:突起
510:接觸點
可藉由參考在附圖中所描繪的本揭示的說明性實施例,來理解在上文簡要概述並在下文更詳細論述的本揭示的實施例。然而,附圖僅圖示本揭示的典型實施例,而因此不應視為對範疇的限制,因為本揭示可允許其他同等有效的實施例。
圖1示意性地圖示根據本揭示的一些實施例的具有基板支撐件的處理腔室的橫截面視圖。
圖2A至圖2C示意性地圖示根據本揭示的一些實施例的基板支撐件的橫截面視圖。
圖3A示意性地圖示根據本揭示的一些實施例的用於基板支撐件的突起的示例性形狀的橫截面側視圖。
圖3B至圖3C示意性地圖示根據本揭示的一些實施例的用於基板支撐件的突起的等距視圖。
圖4A至圖4B示意性地圖示根據本揭示的一些實施例的具有突起的基板支撐件的橫截面視圖。
圖5示意性地圖示根據本揭示的一些實施例的真空卡盤組件的俯視圖。
為了促進理解,在可能的情況下,已使用相同的元件符號,來表示對附圖為共同的相同元件。附圖並未按比例繪製,並且為了清楚起見可能簡化。一個實施例的元件和特徵可有利地併入其他實施例中而無需進一步敘述。
與習知基板支撐設備相比,本揭示的實施例提供了改進的基板支撐件和處理設備,其減少或消除沿著基板接觸基板支撐件的一面(例如,背面)的基板損壞。本揭示的實施例可有利地避免或減少在製造製程期間的背面基板損壞(諸如在半導體處理腔室中夾持基板時),此可進一步限制或防止基板翹曲和不均勻性。本揭示的實施例可用於基板支撐件,該等基板支撐件在利用夾持的製程中接觸基板(例如,使用真空或靜電卡盤的矽晶圓處理)。
圖1示意性地圖示根據本揭示的一些實施例的具有基板支撐件102的處理腔室100的橫截面視圖。處理腔室100可以是在處理期間支撐基板的任何基板處理腔室。在一些實施例中,處理腔室100可以是半導體基板處理腔室(例如,處理半導體晶圓的處理腔室)。在一些實施例中,處理腔室100可經配置以將受支撐基板加熱到高溫。在一些非限制性的實例中,處理腔室100可以是退火腔室,其可以是半導體處理系統的一部分(諸如可從加利福尼亞州的聖克拉拉市的應用材料公司所獲得的彼等),或者處理腔室100可以是處理腔室,諸如Lerner等人在
標題為「High Temperature Vacuum Chuck Assembly」的美國專利案第8,698,048號中所描述的處理腔室。其他處理腔室(包括可從其他製造商所獲得的彼等)亦可適於從本揭示中受益。
處理腔室100通常包括腔室主體101。腔室主體101具有界定處理體積114的側壁106、底部108、及蓋子110。典型穿過側壁106中的閥門(未圖示)進入處理體積114,閥門促進基板120移入和移出腔室主體101的處理體積114。通常由單一鋁塊或與製程化學相容的其他材料來製造腔室主體101的側壁106和底部108,儘管可使用包括多件構造的其他配置。
將基板支撐件102居中設置在腔室主體101內並在處理期間支撐基板120。基板支撐件102通常包括具有第一表面118的支撐主體116。在實施例中,由延伸穿過底部108的軸122來支撐支撐主體116。支撐主體116通常為圓形形狀並且可由材料(諸如,石英、陶瓷(諸如,氧化鋁)、或金屬組合物(諸如,不銹鋼、雙相不銹鋼、鈦、合金鋼、工具鋼組合物、及其組合))製造。在實施例中,將支撐主體116至少部分地塗層材料,以減少其摩擦係數,如下文進一步描述的。
在實施例中,支撐主體116包括一個或多個插孔136及一個或多個突起138,將突起138設置在插孔136內並且可從插孔136拆卸或可移除地耦合到插孔136,諸如下文進一步描述的。在一些實施例中,一個或
多個插孔136延伸穿過第一表面118,並且進入支撐主體116。將一個或多個突起138分別設置在一個或多個插孔136中的對應插孔內,並且從第一表面118突出。一個或多個突起138至少部分地在第一表面118上方界定基本上平坦的支撐表面103。參考圖1,D1表示平坦的支撐表面在第一表面118上方的高度,並且圖示在平坦的支撐表面103與第一表面118之間的間隙。在實施例中,平坦的支撐表面是在第一表面118上方約0.05毫米至5毫米、或0.1毫米至1毫米、或約0.15毫米。在實施例中,平坦的支撐表面是在支撐主體116的整個第一表面118上方。
在一些實施例中,支撐主體116包括至少一個加熱元件124(以虛線圖示)。在一些實施例中,將加熱元件124封裝在支撐主體116內。將加熱元件124(諸如,電極或電阻加熱元件)經由電連接器組件126耦合到電源130,並且將支撐主體116和定位於其上的基板120在處理期間可控制地加熱到預定溫度。在一些實施例中,加熱元件124經配置以將基板120在處理期間加熱到約20℃與750℃之間的溫度。在一些實施例中,當設置在基板支撐件上時,將至少一個通道127(以虛線圖示)設置穿過支撐主體116,以將氣體或真空供應到在第一表面118與基板120的背面之間所界定的空間。可將至少一個通道127耦合到氣體源128以提供氣體,或耦合到真空源129以在處理期間在定位於支撐主體116上的基板120上提供吸力(例如,真空壓力)。支撐主體116可包括DC電極
104(以虛線圖示)和額外電源105(以虛線圖示),諸如適用於靜電卡盤的彼等。支撐主體116可包括在用於微電子裝置製造的基板支撐件中常見的額外元件,諸如冷卻元件、RF電極、及/或背面氣體供應等的非限制性實例。為了簡化描述,並未圖示該等額外元件。
在處理期間,可將基板120放置在腔室主體101內(例如,在基板支撐件的頂上)。基板120可以是(例如)摻雜或未摻雜的矽基板、III-V族化合物基板、矽鍺(SiGe)基板、磊晶基板、絕緣體上矽(SOI)基板、顯示器基板(諸如,液晶顯示器(LCD))、電漿顯示器、電致發光(EL)燈顯示器、發光二極體(LED)基板、太陽能電池陣列、太陽能面板等。在一些實施例中,基板120可以是半導體晶圓。基板120不限於任何特定尺寸或形狀。基板可以是圓形晶圓,其具有200mm直徑、300mm直徑、或其他直徑,諸如450mm等。基板亦可以是任何多邊形、正方形、矩形、彎曲的或其他非圓形的工件,諸如用於製造平面板顯示器的多邊形玻璃基板。
現在參考圖2A,圖示根據本揭示的一些實施例的突起沒有附接到基板支撐件102的一部分的橫截面視圖的示意圖。基板支撐件102可包括上文所述的支撐主體116的實施例,並且包括一個或多個插孔136。每個插孔136具有界定插孔體積214的一個或多個側壁206、底部208、及第一表面218中的開口212。一個或多個插孔
136的側壁206和底部208通常與上文圖1中所述的支撐主體116的材料相同。
在一些實施例中,並且如圖2A所示,可將環形密封帶222(以虛線圖示)設置在支撐主體116的第一表面218的頂上。密封帶222可由與支撐主體116相同的材料製成,並且可與支撐主體成為一體或與支撐主體耦合。密封帶222具有外徑、內徑、和高度,使得它可以在處理期間沿著其外圍邊緣支撐基板(未圖示)。可將第一表面218上方的密封帶222的高度選擇為與複數個突起的高度相同,使得密封帶和突起一起界定基本上平坦的支撐表面(例如,基本上平坦的支撐表面103、420)。密封帶222促進在基板(例如,120)與支撐主體116之間形成密封,(在一些實施例中)可使得在基板的背面和支撐主體之間的區域中維持真空壓力,以將基板夾持於支撐主體,或者(在一些實施例中)可將背面氣體提供到基板的背面與支撐主體之間的區域(例如,當基板支撐件是靜電卡盤時)。儘管僅在圖2A中圖示,但是如本文所述的密封帶可與本文所揭示的任何其他實施例組合使用,特別是圖1、圖2B至圖2C、圖3A至圖3C、圖4A至圖4B、及圖5所示的彼等。
仍然參考圖2A,在一些實施例中,密封帶222和可選的第一表面218可包括設置在其上的塗層219。塗層219的材料足以減少密封帶222和可選的第一表面218的摩擦係數。對第一表面218及/或密封帶222進行
塗層可減少其摩擦係數並減少或消除對基板的損壞(當將基板設置在基板支撐件頂上時)。在一些實施例中,可如本文所述來對整個第一表面218進行塗層。在實施例中,塗層219在高溫條件或高壓縮力條件下表現出足夠的結構完整性以供高生命週期。合適和有效的塗層的非限制性實例包括摩擦塗層(諸如,表現出高強度和低摩擦以及抗許多製程化學品的彼等)。在實施例中,可施加包括碳或碳的氮化物化合物的薄膜塗層219,並且薄膜塗層219可包括類金剛石碳及/或其組合。一種特別適用於此應用的特定摩擦塗層是類金剛石塗層(DLC),諸如由Balzers Oerlikon所提供的STAR® DLC和BALINIT® DLC或由Ionbond所提供的aDLC。然而,可施加表現出該等特性的其他摩擦塗層。在實施例中,可施加四面體無定形碳(ta-C)。在實施例中,可將塗層施加至約0.05μm至約5μm的厚度。例如,可將僅2μm厚度的塗層施加到密封帶222及/或第一表面218。
現在參考圖2B,圖示根據本揭示的一些實施例的突起沒有附接到基板支撐件102的橫截面視圖的示意圖。基板支撐件102可包括螺紋224,將螺紋224設置在側壁206中,並且延伸到插孔236內的底部208,以形成螺紋孔。可藉由本領域已知的任何方式(諸如機械加工),將螺紋224加到插孔。螺紋224可由與支撐主體116相同的材料(諸如陶瓷、氧化鋁、或金屬組合物(諸如不銹鋼、雙相不銹鋼、鈦、合金鋼、工具鋼組合物或其組合))
製成。可尺寸化和隔開螺紋224,以與來自突起的配合或對應的螺紋連接,如下文進一步所述的。
現在參考圖2C,圖示根據本揭示的一些實施例的突起沒有附接到基板支撐件102的橫截面視圖的示意圖。基板支撐件102圖示設置在支撐主體116內的插孔247。在實施例中,插孔247具有界定插孔體積214的側壁206、底部208、及開口212。以相對於支撐主體116的底部209的角度來形成一個或多個插孔的側壁206和底部208。在此類實施例中,當從突起頂部移除基板而不從插孔247移除突起時,支撐主體116的一部分能夠在設置於其中的一個或多個突起(未圖示)上施加力。
發明人已觀察到,可藉由使用由硬度小於或等於要被支撐的基板的硬度的材料所製造的基板支撐元件,來防止或基本上最小化基板損壞。合適的基板支撐材料的非限制性實例包括(例如)熱穩定塑料、或熱塑料材料(諸如,VESPEL®牌的聚酰亞胺塑料、聚醚醚酮(PEEK)、及PBI(聚苯并咪唑)Celazole®牌的熱塑料)。可使用表現出上述軟性質的其他製程相容材料。在一些實施例中,可完全由該材料形成接觸基板的元件(例如,突起138、309)。在一些實施例中,可由該材料在接觸基板的元件的至少一部分中形成接觸基板的元件。
現在參考圖3A至圖3C,圖示根據本揭示的一些實施例的突起的示例性形狀的示意圖。將所有突起309形成為具有相同的高度,並且具有平坦化的頂表面,以接
觸基板的背面(未圖示),並且突起309的頂表面區域的總和是顯著小於支撐表面310,從而減少在支撐表面310和基板(未圖示)之間的接觸區域。在支撐表面310與基板(未圖示)之間的更小接觸面積的情況,實施例僅使突起309具有平面性,而不是使整個支撐表面310平面化。此外,更小接觸面積可減少由支撐表面313所引起的對基板的背面的損壞的可能性。參考圖3C,可將凸塊315加到突起的頂表面,以進一步減少接觸面積。在一些實施例中,突起309在第一表面上方的高度可以為從約25微米至約200微米(例如,約50微米),並且突起309的寬度或直徑可以為從約500微米至約5000微米。
為了防止對基板的凹痕和刮痕(未圖示),突起309的形狀可以是諸如類半球形突起,並具有圖3A中所示的平坦化的支撐表面313。在一些實施例中,可在圓角矩形基礎上形成突起309(如圖3B所示),或在圓形基礎上形成突起309(如圖3C所示)。上文所述的突起的形狀、尺寸、及圖案僅作為實例說明,並且本揭示不限於此。一個或多個突起309可包括圓柱形隆起、柱體、金字塔、錐體、矩形塊、不同尺寸的突起、及在處理期間確保基板的平面性的任何其他形狀。在實施例中,突起309包括螺紋軸306,以便可從支撐主體116拆卸。參考圖3A和圖3C,可包括一個或多個通氣孔314,以在處理期間從插孔336排出空氣。
圖4A至圖4B示意性地圖示根據本揭示的一些實施例的具有突起的基板支撐件的橫截面視圖。參考圖4A,在一個實施例中,複數個突起312可從支撐主體116拆卸,並且被分別設置在一個或多個插孔436中的對應插孔內並從第一表面418突出。一個或多個突起312至少部分地在第一表面418上方界定基本上平坦的支撐表面420。在一個實施例中,突起312的高度D1可以為從約10微米至約50微米(例如,約25微米),並且突起312的寬度或直徑可以為從約500微米至約5000微米。可包括一個或多個通氣孔414,以在處理期間從插孔336排出空氣。
在一些實施例中,如圖4B所示,將複數個突起312分開形成並且從支撐主體116拆卸或可移除地耦合到支撐主體116。在實施例中,突起309包括光滑的無螺紋軸306,以便可從支撐主體116拆卸。一個或多個突起312在第一表面418上方至少部分地界定基本上平坦的支撐表面420。
圖5示意性地圖示根據本揭示的實施例的真空卡盤組件的俯視圖。支撐主體500具有支撐表面501,用於在其上支撐基板(未圖示)。將複數個突起508形成在支撐表面501上,在處理期間基板可以放在支撐表面501上。在一個實施例中,支撐表面501具有300mm的直徑,並且具有在100個與500個之間的突起(例如,在150個至200個之間的突起),其佔據放置於其上的基板的背後
表面區域的大約10%。在一個實施例中,將突起508佈置成跨支撐表面501的基本上線性的佈置。在另一實施例中,將突起508佈置成從支撐表面的中心發出的放射狀圖案。在一個實施例中,支撐表面501具有200mm的直徑。儘管圖示為圓形,但應理解的是,支撐表面501可包括其他形狀,諸如正方形或矩形。
仍然參考圖5,將密封帶502設置圍繞支撐表面501的外圍邊緣。在處理期間,密封帶502在支撐表面501與支撐表面501上方的平坦的支撐表面(未圖示)之間形成低壓區域。在實施例中,將密封帶502如上所述塗層有適於減少其摩擦係數的材料。支撐表面501可進一步包括:表面501與基板(未圖示)之間的一個或多個接觸點510。在實施例中,沒有將一個或多個接觸點510如上所述塗層,並且一個或多個接觸點510比支撐表面501及/或基板更軟。
仍然參考圖5,支撐表面501包括複數個凹槽504。當在真空下的處理期間將基板設置在平坦的支撐表面上時,複數個凹槽504被形成為用於施加吸力(例如,均勻的吸力)的圖案。
儘管前述內容是針對本揭示的實施例,但是可以在不脫離本揭示的基本範疇的情況下,設計本揭示的其他和進一步實施例。
116‧‧‧支撐主體
306‧‧‧螺紋軸
309‧‧‧突起
310‧‧‧支撐表面
313‧‧‧支撐表面
314‧‧‧通氣孔
336‧‧‧插孔
Claims (17)
- 一種基板支撐件,包括:一支撐主體,該支撐主體具有一第一表面,其中該支撐主體係由氧化鋁或一金屬組合物製成,並包括圍繞該支撐主體的一外圍邊緣所設置的一密封帶,其中該密封帶塗層有減少該密封帶的一摩擦係數的一材料;一個或多個插孔,該一個或多個插孔延伸穿過該第一表面並進入該支撐主體;及一個或多個熱塑料突起,將該一個或多個熱塑料突起分別設置在該一個或多個插孔中的對應插孔內並從該第一表面突出,其中該一個或多個突起在該第一表面上方至少部分地界定一基本上平坦的支撐表面,其中該一個或多個熱塑料突起具有一平坦化的頂表面,用於支撐一基板,其中該一個或多個熱塑料突起包括設置在該平坦化的頂表面上的一凸塊以及兩個或多個通氣孔,該兩個或多個通氣孔經配置以在處理期間從該一個或多個插孔排出空氣。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起可從該支撐主體更換或拆卸。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起比該第一表面更軟。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起是由一熱塑料材料製成。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起具有約25微米至約200微米的一高度。
- 如請求項1所述之基板支撐件,其中該一個或多個插孔是螺紋孔。
- 如請求項6所述之基板支撐件,其中該一個或多個熱塑料突起包括與該等螺紋孔配合的螺紋。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起是圍繞該支撐主體所佈置的複數個突起。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起包括聚苯并咪唑熱塑料,且其中該第一表面包括不銹鋼。
- 如請求項1所述之基板支撐件,其中該一個或多個熱塑料突起包括聚苯并咪唑熱塑料。
- 一種基板支撐件,包括:一支撐主體,該支撐主體具有一第一表面,其中該支撐主體係由氧化鋁或一金屬組合物製成,並包括圍繞該支撐主體的一外圍邊緣所設置的一密封帶,其中該密封帶塗層有減少該密封帶的一摩擦係數的一材 料;一個或多個插孔,該一個或多個插孔以相對於該第一表面的少於90度的一角度延伸穿過該第一表面並進入該支撐主體;一個或多個熱塑料突起,將該一個或多個熱塑料突起分別設置在該一個或多個插孔中的對應插孔內並從該第一表面突出,其中該一個或多個熱塑料突起具有用於接觸和支撐一基板的一平坦化的頂表面,而在該第一表面上方至少部分地界定一基本上平坦的支撐表面,其中該一個或多個熱塑料突起具有由該一個或多個插孔接收的一成角度下部,該成角度下部經配置以抵抗在相對於於該第一表面的一垂直方向上移除該一個或多個熱塑料突起,其中該一個或多個熱塑料突起包括設置在該平坦化的頂表面上的一凸塊以及兩個或多個通氣孔,該兩個或多個通氣孔經配置以在處理期間從該一個或多個插孔排出空氣,及其中該一個或多個熱塑料突起可從該支撐主體更換或拆卸。
- 如請求項11所述之基板支撐件,其中該一個或多個熱塑料突起中的每個熱塑料突起包括熱塑料接觸點,以支撐該基板,其中該等熱塑料接觸點比該第一表面更軟。
- 如請求項11所述之基板支撐件,其中該一個或多個熱塑料突起包括聚酰亞胺熱塑料、聚醚醚酮熱塑料、或聚苯并咪唑熱塑料。
- 一種處理腔室,包括:一腔室主體,該腔室主體具有側壁和一底部;及一基板支撐件,將該基板支撐件設置在該腔室主體內,該基板支撐件包括:一支撐主體,該支撐主體具有一第一表面,其中該支撐主體係由氧化鋁或一金屬組合物製成,並包括圍繞該支撐主體的一外圍邊緣所設置的一密封帶,其中該密封帶塗層有減少該密封帶的一摩擦係數的一材料;一個或多個插孔,該一個或多個插孔延伸穿過該第一表面並進入該支撐主體;及一個或多個螺紋熱塑料突起,將該一個或多個螺紋熱塑料突起分別設置在該一個或多個插孔中的對應插孔內並從該第一表面突出,其中該一個或多個螺紋熱塑料突起包括在該一個或多個螺紋熱塑料突起的一平坦化的頂表面中的至少兩個通氣孔以及在該平坦化的頂表面上方突出的具有一最高點的一凸塊,而在該第一表面上方至少部分地界定一基本上平坦的支撐表面。
- 如請求項14所述之處理腔室,其中一個或多個個螺紋熱塑料突起可從該支撐主體拆卸,使得它們可以被耦合到該支撐主體並從該支撐主體被解耦。
- 如請求項14所述之處理腔室,其中該一個或多個個螺紋熱塑料突起比該第一表面更軟。
- 如請求項14所述之處理腔室,其中將該密封帶設置圍繞該支撐主體的一外圍邊緣,用於當將一基板設置在該平坦的支撐表面上時,在該平坦的支撐表面與該第一表面之間形成一低壓區域。
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US15/703,961 US11955362B2 (en) | 2017-09-13 | 2017-09-13 | Substrate support for reduced damage substrate backside |
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US11955362B2 (en) | 2024-04-09 |
KR20200042012A (ko) | 2020-04-22 |
WO2019055406A1 (en) | 2019-03-21 |
TW201921584A (zh) | 2019-06-01 |
KR102653894B1 (ko) | 2024-04-01 |
US20190080951A1 (en) | 2019-03-14 |
CN111183512A (zh) | 2020-05-19 |
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