A7 466667 __B7_ 五、發明說明（） 5-1發明領域： 本發明係有關於一種半導體製程設備 '特別是關於 一種具最小接觸面積之靜電吸盤。 5-2發明背景： 在電子與半導體工業中，為了在半導體基 >反上製作各 種積體電路（Integrated Circuit：, 1C)的電路元件與連線佈 局，以構成具有預定功能作用的各種積體電路晶片 (chip)，必須在每一半導體晶圓上進行諸如氧化、沈積、 微影、蝕刻等種種的製程步驟，藉此形成許多不同材質、 不同圖案結構的導電膜層與介電膜層於基板上，而結合成 完整的晶片電路結構。 為因應半導體製程的各種特定需求，進行製程所使用 的各種機台設備系統都經過特殊的設計。而在每一個製程 進行時，雖然因應不同的製程方法、不同的結果要求，必 須將各種製程參數控制在種種不同的條件下，然而對於製 程穩定度' 均勻度、以及精確度的要求則一致。因此在每 一種不同的製程機台的設備系統中，半導體晶圓都必須確 實地固定在一承載基座之上，置放於特定的製程反應室 本紙張尺度適用中國國家標準（CNS)A4規格（21fl X 297公釐） (請先閱讀背面之注意事項再填寫本頁> 表--------訂---------線1 經濟部智慧財產局員工消費合作社印制^ A7 B7 66 6 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 内，才能在預定的製程參數之條件控制下，具以實施各種 半導體製程，而於晶圓上獲致符合均勻度與精確度要求的 預定结果。 除了工件固定的需求之外，許多的半導體製程常需要在 較常溫更高的溫度下實施，一個一般性的例子是物理氣相沈 積製程（Physical Vapor Deposition, PVD)。在物理氣相沈 積製程中，往往必須攝氏四、五百度以上高溫的環境條件下 實施。而如化學氣相沈積製程（Chemical Vapor Deposition, CVD)等其他的製程也往往有高溫條件的需求。甴於在一半 導體晶圓製程系統的製程反應室中，半導體晶圓在製程進行 時由一基座所支撐；在上述高溫製程中，為了使晶圓的製程 順利實施，支撐基座常必須進行加熱以提高晶圓的溫度。因 此加熱控制裝置以及傳熱分佈功能亦成為設計製程機台設 備所必須考量的因素。 經濟部智慧財產局員工消費合作社印製 在穩定度與均勻度的要求下，為了將晶圓工件固定，靜 電吸盤（electrostatic chuck, E-chuck)是一種常用的工件固 定設備。從電腦繪圖機中的紙張固定，到半導體晶圓製程反 應室中的晶圓固定，在許多不同的應用設備中，靜電吸盤被 廣泛地使用來固持工件（workpiece) a静電吸盤一般係採用 在吸盤及晶圓間形成靜電吸引力的方法來束緊工件。此時必 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 >< 297公釐） A7 4 6 6 6b / B7___ 五、發明說明（） 須在吸盤中設置一個或多個電極，並供應適當的偽壓，以在 吸盤及晶圓間分別感應生成極性相反的電荷。在極性相反的 電荷間將產生吸引力，可使晶圓緊抵吸盤，而將晶圓固定3 在靜電吸盤的設計中，具有最小接觸面積（Minimum Contact Area, MCA)的靜電吸盤，係採用將複數個接觸電 極突出於靜電吸盤的接觸面上的方式設置。此一設計可使晶 圓吸附於靜電吸盤上時不會全面緊貼，既可減少接觸磨擦的 面積，並.可預留傳熱的空間。由於此一方式將接觸面的壓力 集中到接觸電極之上，因此接觸電極必須採用高耐磨的材 料製作，以減輕元件的損耗，降低設備維修更新的頻率。 在此一考量下，氮化鈦（titanium nitride, TiN)具有硬度 高、耐磨性佳的優點，是目前最典型、最常採用的接觸電 極使用材料。 然而氮化鈦在高溫環境中的穩定度不夠，其氧化反應 的溫度條件約在攝氏400至500度左右，亦即當製程溫度 達到攝氏400至500度左右時，氮化鈦將產生氧化反應， 材料中的部份氮元素將被氧元素取代，形成氧化鈦 (t i t a n i u m ο X i d e)結構。由於氡化鈦的硬度遠不及氮化鈦， 因此將造成接觸電極的加速磨損，縮短元件的使用壽命。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 6 6 6 b 7 a7 _B7_ 五、發明說明（） 5-3發明目的及概述： 鑒於上述之發明背景中，傳統的氮化鈦接觸電極易 在高溫製程進行中產生氧化反應，生成硬度不足的氧化 鈦，使元件的使用壽命縮短。因此對於需要在高溫條件下 實施的半導體積體電路製程，實需有一更理想的晶圓固定 與加熱設備。 根據以上所述之目的，本發明提供了 一種工件固定 設備，採用具有最小接觸面積之靜電吸盤1以將晶圓固定 在吸盤設備的吸附表面之上。在此一靜電吸盤設備中設置 有複數個分佈電極，耦合至電源供應控制裝置，用以在電 源供應下，於該吸附表面上提供一靜電場分佈，而能吸附 晶圓。在吸盤設備的吸附表面之上則設置有複數個吸附電 極，採用鈦鋁氮化物（TiAIN)材料製作，突出於該吸附表 面之上，作為與晶圓間的接觸點，每個吸附電極並耦合至 所對應的分佈電極。 靜電吸盤以支撐元件固定在製程機台上。支撐元件 中設置有加熱元件以及冷卻元件，並具有氣體傳輸通道， 可以將氣體傳送至吸附元件上的氣體給進口，再經由吸附 電極間的傳熱氣體分佈槽分佈至製程晶圓的背面，以增進 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 哀·-------訂 —------- I ! 經濟部智慧財產局員工消費合作社印製 6 66 7_五、發明說明（） 溫度的控制。5-4圖式簡單說明 A7 B7 本發明的較佳實施例將於往後之說明文字t輔以下 列圖形做更詳細的闡述： 第一圖為本發明以具有最小接觸面積之靜電吸盤吸 附晶圓之工件固定設備的立體圖；以及 _ 第二圖為本發明具有最小接觸面積之靜電吸盤吸 附晶圓之工件固定設A7 466667 __B7_ V. Description of the invention () 5-1 Field of the invention: The present invention relates to a semiconductor process equipment 'especially to an electrostatic chuck with a minimum contact area. 5-2 Background of the Invention: In the electronics and semiconductor industry, in order to fabricate circuit elements and wiring layouts of various integrated circuits (Integrated Circuit :, 1C) on the semiconductor substrate, it is necessary to form various products with predetermined functions. For bulk circuit chips, various process steps such as oxidation, deposition, lithography, and etching must be performed on each semiconductor wafer, thereby forming many conductive film layers and dielectric film layers with different materials and different pattern structures. On the substrate and combined into a complete chip circuit structure. In order to meet the specific needs of the semiconductor process, various machine equipment systems used in the process are specially designed. While each process is performed, although the various process parameters must be controlled under various conditions in accordance with different process methods and different results, the requirements for process stability, uniformity, and accuracy are the same. Therefore, in each different process equipment system, the semiconductor wafer must be fixed on a carrier base and placed in a specific process reaction chamber. The paper size is applicable to China National Standard (CNS) A4. (21fl X 297 mm) (Please read the notes on the back before filling out this page> Form -------- Order --------- Line 1 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed ^ A7 B7 66 6 V. Description of the invention () (Please read the precautions on the back before filling this page), in order to implement various semiconductor processes under the control of the predetermined process parameters, and the wafer In addition to the requirements of workpiece fixation, many semiconductor processes often need to be implemented at higher temperatures than normal. A general example is the physical vapor deposition process (Physical Vapor Deposition (PVD). In the physical vapor deposition process, it must often be carried out under high temperature conditions of four or five hundred degrees Celsius. For example, the chemical vapor deposition process (Chemical Vapor Deposition, CVD) Other processes often require high temperature conditions. In a process reaction chamber of a semiconductor wafer processing system, the semiconductor wafer is supported by a pedestal during the process; in the above high temperature process, in order to make the wafer The manufacturing process is successfully implemented, and the support base must often be heated to increase the temperature of the wafer. Therefore, the heating control device and the heat transfer distribution function have also become factors that must be considered in the design of the process equipment. Under the requirements of stability and uniformity, in order to fix wafer workpieces, electrostatic chuck (E-chuck) is a commonly used workpiece fixing equipment. From paper fixing in computer plotters to semiconductor wafer manufacturing processes The wafers in the reaction chamber are fixed. In many different applications, electrostatic chucks are widely used to hold workpieces. Static chucks are generally tightened by forming an electrostatic attraction between the chuck and the wafer. Workpiece. At this time, 3 paper sizes must comply with China National Standard (CNS) A4 (210 > < 297 mm) A7 4 6 6 6b / B7___ V. Description of the invention () One or more electrodes must be provided in the chuck, and appropriate pseudo pressure should be provided to induce opposite polarity charges between the chuck and the wafer respectively. In the opposite polarity, There will be attractive forces between the electric charges, which can make the wafer close to the chuck, and fix the wafer.3 In the design of the electrostatic chuck, the electrostatic chuck with the minimum contact area (MCA) uses a plurality of contact electrodes. It is set up in a way that protrudes on the contact surface of the electrostatic chuck. This design can prevent the wafer from fully abutting when it is adsorbed on the electrostatic chuck, which can reduce the area of contact friction and reserve space for heat transfer. Because this method concentrates the pressure on the contact surface to the contact electrode, the contact electrode must be made of a highly wear-resistant material to reduce the loss of components and reduce the frequency of equipment maintenance and update. Under this consideration, titanium nitride (TiN) has the advantages of high hardness and good wear resistance, and is currently the most typical and most commonly used contact electrode material. However, the stability of titanium nitride in a high-temperature environment is insufficient. The temperature conditions of its oxidation reaction are about 400 to 500 degrees Celsius, that is, when the process temperature reaches about 400 to 500 degrees Celsius, titanium nitride will produce an oxidation reaction. Part of the nitrogen element in the material will be replaced by the oxygen element to form a titanium oxide (titanium ο X ide) structure. Because the hardness of titanium halide is far less than that of titanium nitride, it will cause accelerated wear of the contact electrode and shorten the service life of the component. 4 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ^ -------- Order --------- line (please read the notes on the back before filling (This page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 6 6 b 7 a7 _B7_ V. Description of the invention (5) Purpose and summary of the invention: In view of the above background of the invention, the traditional titanium nitride contact electrode is easy to During the high temperature process, an oxidation reaction occurs, and titanium oxide with insufficient hardness is generated, which shortens the service life of the component. Therefore, for the semiconductor integrated circuit manufacturing process that needs to be performed under high temperature conditions, a more ideal wafer fixing and heating equipment is needed. According to the above-mentioned object, the present invention provides a work piece fixing apparatus using an electrostatic chuck 1 having a minimum contact area to fix a wafer on the suction surface of the chuck apparatus. In this electrostatic chuck device, a plurality of distribution electrodes are provided, which are coupled to a power supply control device for providing an electrostatic field distribution on the adsorption surface under the power supply, so that the wafer can be adsorbed. On the suction surface of the chuck device, a plurality of suction electrodes are provided, which are made of titanium aluminum nitride (TiAIN) material and protrude above the suction surface as a contact point with the wafer. Each suction electrode is coupled in parallel. To the corresponding distribution electrode. The electrostatic chuck is fixed on the process machine with supporting elements. The supporting element is provided with a heating element and a cooling element, and has a gas transmission channel. The gas can be transmitted to the gas on the adsorption element to the inlet, and then distributed to the back of the process wafer through the heat transfer gas distribution groove between the adsorption electrodes. Increase the paper size to apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page). -I! Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 66 7_V. Description of the invention () Temperature control. 5-4 Schematic illustration A7 B7 The preferred embodiment of the present invention will be explained in more detail in the following explanatory text t supplemented by the following figure: The first figure is the electrostatic chuck adsorption crystal with the smallest contact area of the present invention A perspective view of a round workpiece fixing device; and _ The second figure is a workpiece fixing device for a wafer with an electrostatic chuck having a minimum contact area according to the present invention.
5-5圖號對照說明說明 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 100 靜 電 吸 盤 本 體 101 靜 電 吸 附表 110 吸 附 電 極 112 分 佈 電 極 112a 分 佈 電 極 112b 分 佈 極 120 傳 熱 氣 體 分 佈槽 130 氣 體 給 進口 132 氣 體 傳 m 通 道 140 東 緊 環 150 加 孰 i tv> 元 件 160 冷 卻 元 件 165 流 體 輸 送 管 170 控 制 元 件 180 對 流 腔 200 支 撐 元 件 - I 1 I I i I I — I — I 卜 1ιι1ιιιιίιιϊιι — < 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 4 6 6 五、發明說明（） 5-6發明詳細說明： 本發月揭露一種具最小接觸面積Contact Area, MCA)之靜電吸盤’可以應用在一製程反應室之機 台組合中，適用於製程中的工件（w〇rk piece，一般在半 導體製程中為晶圓）固定作業。 為求能對本發明所提出的内容有較詳實的了解，讀者在 研讀以下說明書時應同時參考第一及第二圖。第一圖顯示出 本發明所提出包含靜電吸盤（electr〇static chuck/ E_chuck) 之工件固疋设備的立體圖，在本發明之工件固定設備與靜電 吸盤元件的最佳實施例中，包含靜電吸盤本體1〇〇以及支 撐兀件200。其中支撐元件2〇〇設置於靜電吸盤本體ϊ〇〇的 下方，作為靜電吸盤與反應室之間的連繫與支撐’並可提供 熱控元件以及傳輸通道與管線空間；熱控元件用以控制溫 度，傳輸通道與管線空間用以作為傳輸電能、熱量等所需的 管道。支撐元件200較為詳細的配置設計可以參見第二圖中 所示的實施例之剖面圖，並將於後續的文字中予以說明q 靜電吸盤本體100設置於支撐元件20〇上，具有一靜電 吸附表面101。靜電吸盤本體之靜電吸附表面1〇1大致呈— 平面結構，其上設置有複數個吸附電極u 〇。吸附電極m 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --r---------- ,裝--------訂--------_線 (請先閱讀背面之;i意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 6 6 6 7 A7 經濟部智慧財產局員工消費合作社印製 B7五、發明說明（） 略為突出於靜電吸附表面101之上，其側面圖慄可參見第二 圖中所示的靜電吸盤剖面圖。吸附電極110在靜電吸附表面 101上的分佈位置可以任意配置，在第一圖所呈現的實拖例 中，吸附電極110於靜電吸盤本體100之靜電吸附表面101 上排列成同心圓分佈。在其他的實施例中，各種不同的排列 設計也都可以採用。 在靜電吸盤本體之靜電吸附表面101上，由i個凸出的 吸附電極 110的配置，形成一組傳熱氣體分佈槽（gas groove)120，分佈於各吸附電極110之間，其側面圊像同樣 可參見第二圖中所示，當工件（晶圓）被吸附在靜電吸盤的吸 附電極110上時，傳熱氣體分佈槽120即在工件與靜電吸盤 間形成間隙。此時配合支撐元件200所提供的傳輸通道以及 氣體給進口（gas feed through)130的設置’傳熱氣體分佈糟 120可以於晶圓與吸盤之間提供氣體流動傳輸的通道。由熱 控元件（顯示於第二圖中）所供應的熱能，可以經由氣體給進 口 130輸送，藉著氣體在傳熱氣體分佈槽120中的散佈；均 勻地分佈到晶圓的下表面。 第二圖描繪出本發明之工件固定設備與靜電吸盤較詳 細的剖面結構，並配合一晶圓900置放於靜電吸盤上，而顯 示出更詳細的結構關係。由第二圖中可以看出，靜電吸_盤本 (請先閱讀背面之江意事項再填寫本頁)5-5 Drawing number comparison description (please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives 100 Electrostatic chuck body 101 Electrostatic adsorption table 110 Adsorption electrode 112 Distribution electrode 112a Distribution electrode 112b Distribution Pole 120 Heat transfer gas distribution slot 130 Gas feed inlet 132 Gas transfer m Channel 140 East tight ring 150 Plus 孰 i tv > Element 160 Cooling element 165 Fluid delivery tube 170 Control element 180 Convection chamber 200 Support element-I 1 II i II — I — I 卜 1ι1ιιιιιιιϊιι — < This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 4 6 6 V. Description of the invention () 5-6 Detailed description of the invention: This month ’s disclosure of a An electrostatic chuck with a minimum contact area (MCA) can be used in the machine assembly of a process reaction chamber, and is suitable for the work (work piece, generally wafers in the semiconductor process) fixed operation. In order to have a more detailed understanding of the content of the present invention, the reader should refer to the first and second figures at the same time when studying the following description. The first figure shows a perspective view of a workpiece fixing device including an electrostatic chuck / E_chuck according to the present invention. In a preferred embodiment of the workpiece fixing device and the electrostatic chuck element of the present invention, the electrostatic chuck is included. The body 100 and the supporting member 200. The support element 200 is disposed below the electrostatic chuck body 〇〇, as the connection and support between the electrostatic chuck and the reaction chamber, and can provide thermal control elements and transmission channels and pipeline space; thermal control elements are used to control Temperature, transmission channel and pipeline space are used as pipelines required for transmitting electrical energy, heat, etc. For a more detailed configuration design of the support member 200, please refer to the cross-sectional view of the embodiment shown in the second figure, and will be explained in the following text. Q The electrostatic chuck body 100 is disposed on the support member 20 and has an electrostatic adsorption surface. 101. The electrostatic adsorption surface 101 of the electrostatic chuck body is approximately a planar structure, and a plurality of adsorption electrodes u 0 are provided thereon. Adsorption electrode m 7 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) --r ----------, installed -------- order --- -----_ line (please read the back of the page first; please fill in this page before filling in this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 6 6 6 7 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention () It protrudes slightly above the electrostatic adsorption surface 101, and its side view can be seen in the cross section of the electrostatic chuck shown in the second figure. The distribution positions of the adsorption electrodes 110 on the electrostatic adsorption surface 101 can be arbitrarily arranged. In the example shown in the first figure, the adsorption electrodes 110 are arranged in a concentric circle on the electrostatic adsorption surface 101 of the electrostatic chuck body 100. In other embodiments, various arrangements may be used. On the electrostatic adsorption surface 101 of the electrostatic chuck body, a set of i protruding adsorption electrodes 110 is formed to form a group of heat transfer gas distribution grooves (gas grooves) 120, which are distributed between each adsorption electrode 110, and a side image is formed. See also the second figure, when the workpiece (wafer) is adsorbed on the adsorption electrode 110 of the electrostatic chuck, the heat transfer gas distribution groove 120 forms a gap between the workpiece and the electrostatic chuck. At this time, in cooperation with the transmission channel provided by the support element 200 and the setting of the gas feed through 130, the heat transfer gas distribution channel 120 can provide a channel for gas flow transmission between the wafer and the chuck. The thermal energy supplied by the thermal control element (shown in the second figure) can be transferred through the gas supply inlet 130, and the gas is distributed in the heat transfer gas distribution tank 120; it is evenly distributed on the lower surface of the wafer. The second figure depicts a more detailed cross-sectional structure of the workpiece fixing device and the electrostatic chuck of the present invention, and is placed on the electrostatic chuck with a wafer 900 to show a more detailed structural relationship. As can be seen from the second figure, the electrostatic suction _ disk version (please read the Jiang Yi matters on the back before filling this page)
氣·-------訂---------I 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 6 667 A7 經濟部智慧財產局員工消費合作社印製 B7_五、發明說明（） 體100由束緊環140固接於支撐元件200之上；猙電吸盤上 各吸附電極11 0則突出於靜電吸附表面1 〇 1之上3當晶圓被 固定於靜電吸盤上時，晶圓9 0 0將只接觸到各吸附電極11 〇 的表面’而不會接觸到吸附電極11 〇間的氣體槽道120的部 份’亦即被吸附的晶圓900並未與靜電吸盤本體1〇〇形成全 面性的接觸，可以使晶圓與靜電吸盤間的接觸面積減至最 小Q 各吸附電極110耦合至靜電吸盤中的分佈電極112，再 經由未顯示於圖上的電路*耦合至電源控制供應設備。經由 電能的供應作用，使各分佈電極112以及吸附電極11 〇間產 生靜電場，即吸附電場，可以在靜電吸盤的靜電吸附表面 101與晶圓工件900的下表面間，提供所需的靜電引力，使 晶圓900吸附於靜電吸盤之上。其中，由分佈電極112的配 置可控制各吸附電極110的極性分佈，進而掌握整個靜電吸 附表面101的電場分佈。 對於吸附電場的分佈，可以採取多種不同的設計。一個 最基本的配置如第二圖t所顯示，採用雙重分佈電極112a 與112 b的設置，形成一個二極吸盤，而所有的吸附電極11 〇 分別對應耦合至二分佈電極112a或112b其中之一。當進行 晶圓吸附作業時，由控制電路分別對二個分佈電極提供電量 ------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 心S 6 6 6 7 A7 _B7五、發明說明（） 相4而極性相反的電壓’而在分佈電極之間，也在吸附電極 之間產生一靜電場。當晶圓900置放於靜電吸盤之上時，此 一靜電場耦合通過晶圓900，使晶圓900的下表面積聚電 荷’而與吸附電極110上電性相反的電荷產生靜電引力，使 晶圓900穩固地固定在靜電吸盤之上。除了二極沒盤設計 外’其他各種可以產生靜電引力的不同分佈電極配置，也都 可以採用於本發明之中。一般而言，適當的配置將使每一吸 附電極110各對應耗合至一分佈電極，而每一分）布電極則可 對應耦合至一個或多個吸附電極。 由本發明第二圖中可以清楚看出，對應於同一分佈電極 112a或n2b的每個吸附電極η〇都具有同樣的靜電極性， 與所對應的分佈電極於電場分佈上可以視為一個整體。然而 經由突出於吸附表面101的複數個吸附電極11 〇的設計，所 吸附的晶圓將只貼附在各吸附電極11 0的上表面上，而不會 與吸附表面101形成全面性的接觸，如此既可以減少吸附表 面101的磨損，也可以於晶圓背面（與靜電吸盤間的吸附面） 提供傳熱氣體分佈槽120，增加氣體的流動，以促進熱能的 均勻分佈，使製程條件可以獲得更精確的掌控。 在本發明最佳實施例中，複數個吸附電極110由鈦鋁 氮化物（Ti A1Ν)材料製作。鈦鋁氮化物（Ti A IN)材料的硬度 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐） 經濟部智慧財產局員工消費合作社印製 R 6 7 Λ7 _B7五、發明說明（） 一般可達2 2 0 0至3 0 0 0之間’平均達2 6 0 0，接觸磨擦的而于 受性極高’亦即具有極佳的抗磨損能力同樣重要的是， 鈦鋁氮化物（T i A1N)的抗氧化能力亦甚佳，其氧化溫度一般 在攝氏800度至900度以上，因此在處理溫度四、五百度 左右的製程例如物理氣相沈積製程時，較氧化溫度在攝氏 400度左右的亂化钦（TiN)更為適合。此外，欽氮化物 (T i A1N)在氧化後所形成的氧化產物三氧化二鋁（a 12〇3 ；)， 其硬度亦較氮化鈦的氧化產物氧化鈦為高。^ 在支撐元件2 ◦ 0中’設置有熱控元件，用以調整控制製 程進行中所需的工件溫度。熱控元件可以包含有加熱元件 150、冷卻元件160、以及溫度控制器170。加熱元件150可 以採用阻抗加熱器的形式設置，一般為電阻線圈或是以鎢一 類之金屬材料所製作的金屬層。當電流通過加熱元件15 〇 時，加熱元件的電阻即將電能轉換而產生熱量，經由加熱器 周圍導熱材料的傳遞，使靜電吸盤上的晶圓900溫度升高。 加熱元件可視為隨著輸入之電子訊號而升高溫度的任意元 件。 在理想的狀況下’支撐元件200接觸靜電吸盤本體1 〇〇 的部份由具有足夠導熱性的材質所製作，可以將熱量由加熱 元件150傳送至工件900的背面，使工件（半導體晶圓）9〇〇 (請先閱讀背面之注意事項再填寫本頁)Gas · -------- Order --------- I 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 4 6 6 667 A7 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperative B7_V. Description of the invention () The body 100 is fixed to the supporting element 200 by the tightening ring 140; each adsorption electrode 11 on the electric chuck protrudes above the electrostatic adsorption surface 1 〇3 When the wafer is fixed on the electrostatic chuck, the wafer 900 will contact only the surface of each adsorption electrode 11 ′, and will not contact the part of the gas channel 120 between the adsorption electrodes 〇 ′, that is, The adsorbed wafer 900 does not form a comprehensive contact with the electrostatic chuck body 100, which can minimize the contact area between the wafer and the electrostatic chuck. Q Each adsorption electrode 110 is coupled to the distribution electrode 112 in the electrostatic chuck. Coupling to a power control supply device via a circuit * not shown in the figure. Through the supply of electric energy, an electrostatic field is generated between each distribution electrode 112 and the adsorption electrode 110, that is, an adsorption electric field, which can provide the required electrostatic attraction between the electrostatic adsorption surface 101 of the electrostatic chuck and the lower surface of the wafer workpiece 900. So that the wafer 900 is adsorbed on the electrostatic chuck. Among them, the configuration of the distribution electrode 112 can control the polarity distribution of each adsorption electrode 110, and further grasp the electric field distribution of the entire electrostatic adsorption surface 101. There are many different designs for the distribution of the adsorption electric field. A basic configuration is shown in the second figure t. The arrangement of the dual distribution electrodes 112a and 112b is used to form a two-pole chuck, and all the adsorption electrodes 11 〇 are respectively coupled to one of the two distribution electrodes 112a or 112b. . When the wafer suction operation is performed, the control circuit provides electric power to the two distributed electrodes respectively. (Please read the precautions on the back before filling this page) 9 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed Heart S 6 6 6 7 A7 _B7 V. Description of the invention () Phase 4 The voltage of opposite polarity 'generates an electrostatic field between the distribution electrodes and between the adsorption electrodes. When the wafer 900 is placed on the electrostatic chuck, this electrostatic field is coupled through the wafer 900, so that the lower surface area of the wafer 900 is charged, and the charge opposite to the electrical polarity of the adsorption electrode 110 generates electrostatic attraction, which makes the crystal The circle 900 is firmly fixed on the electrostatic chuck. In addition to the two-pole, no-disk design, various other distributed electrode configurations that can generate electrostatic attraction can also be used in the present invention. Generally speaking, an appropriate configuration will cause each adsorption electrode 110 to be correspondingly consumed to a distribution electrode, and each distribution electrode may be correspondingly coupled to one or more adsorption electrodes. It can be clearly seen from the second figure of the present invention that each adsorption electrode η0 corresponding to the same distributed electrode 112a or n2b has the same electrostatic polarity, and can be regarded as a whole in the electric field distribution with the corresponding distributed electrode. However, through the design of the plurality of adsorption electrodes 110 that protrude from the adsorption surface 101, the adsorbed wafer will only be attached to the upper surface of each adsorption electrode 110, and will not form a comprehensive contact with the adsorption surface 101. In this way, the abrasion of the adsorption surface 101 can be reduced, and a heat transfer gas distribution groove 120 can be provided on the back of the wafer (the adsorption surface between the electrostatic chuck) to increase the gas flow to promote the uniform distribution of thermal energy, so that the process conditions can be obtained. More precise control. In the preferred embodiment of the present invention, the plurality of adsorption electrodes 110 are made of a titanium aluminum nitride (Ti A1N) material. Hardness of titanium aluminum nitride (Ti A IN) material (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 * 297 mm) Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the consumer cooperative R 6 7 Λ7 _B7 V. Description of the invention () Generally it can reach between 2 2 0 to 3 0 0 'on average up to 2 6 0 0, those who are in contact with friction and are highly affected', that is, have Excellent resistance to abrasion is also important. The oxidation resistance of titanium aluminum nitride (T i A1N) is also very good. Its oxidation temperature is generally 800 to 900 degrees Celsius, so the processing temperature is about four or five hundred degrees. For a process such as a physical vapor deposition process, it is more suitable than TiN with an oxidation temperature of about 400 degrees Celsius. In addition, the oxidation product formed by the oxidation of cyanide nitride (T i A1N) after the oxidation is alumina (a 1203;), its hardness is also higher than that of the titanium nitride oxide titanium oxide. ^ In the support element 2 ◦ 0, a thermal control element is provided to adjust the temperature of the workpiece required during the control process. The thermal control element may include a heating element 150, a cooling element 160, and a temperature controller 170. The heating element 150 may be provided in the form of an impedance heater, and is generally a resistance coil or a metal layer made of a metal material such as tungsten. When the current passes through the heating element 150, the resistance of the heating element is to convert the electrical energy to generate heat, which is transferred by the thermally conductive material around the heater, which raises the temperature of the wafer 900 on the electrostatic chuck. The heating element can be regarded as any element which increases the temperature with the input electronic signal. In an ideal situation, the portion of the support member 200 that contacts the electrostatic chuck body 100 is made of a material with sufficient thermal conductivity, and the heat can be transferred from the heating element 150 to the back of the workpiece 900 to make the workpiece (semiconductor wafer) 9〇〇 (Please read the notes on the back before filling in this page)
本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） 4 經濟部智慧財產局員工消費合作社印製This paper size applies to the national standard (CNS) A4 specification (210 X 297 mm). 4 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs.
6 h 6 7 A7 _B7__五、發明說明（） 被加熱至製程中所需的操作溫度。在一般狀況下中，支撐元 件200的接觸部份由半導體材料、陶瓷材料或是混合材料製 作。在本發明一較佳實施例中’氮化鋁一類的陶瓷材料可作 為支揮元件200的適當材質，在另一實施例中，也可以採用 推雜有一乳化欽（T i Ο2) —類金屬乳化物的纟g 土（ a丨u m i n a)，或 其他具有相似阻抗的陶瓷材料來製作。 為了進一步控制溫度參數，靜電吸盤中也寸以設置冷卻 元件16 0 ’與加熱元件15 0同時作用以調整溫度。在一實施 例中，冷卻元件160為一流體儲存槽（通常為儲水空間），配 合流體輸送管1 65的設置’可以經由低溫流體（一般為水）的 循環調節’調整冷卻元件160的溫度》在溫度控制器1 70的 掌握下，經由加熱元件150與冷卻元件160的作用，製程所 需的溫度條件可以受到更精確的控制。除了藉由支撐元件 200接觸區域的導熱作用之外，為了加強導熱性，可以將一 傳熱氣體經由氣體傳輸通道132，通過氣體給進口 130，導 入吸盤110的表面101及晶圊9 ◦ 0的背面之間的間隙中，經 由傳熱氣體分佈槽120均勻散布。此外，在支撐元件200中 也可以形成一對流腔180，可以藉由空氣對流的作用進行冷 卻作用。 採用本發明上述之具最小接觸面積的靜電吸盤（MCA ---1.---------Λ ----I---訂-----I---I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 2W公釐） 4 F 6 66 7 A7 經濟部智慧財產局員工消費合作社印製 B7五、發明說明（） E，chuck)作為工件固定設頜’可以利用靜電引力将晶圓穩固 地吸附在製程反應室的機台設備上，並可配合工件固定設備 中熱控元件的使用’使製程溫度參數之控制更加精密均勻。 當晶圓製程結束時，將遠端供應電源降壓或關閉，即可使晶 圓脫離吸盤的束缚’然後由吸盤下方的升降栓（未顯示）將晶 圓提起’離開吸盤110的上表面101，再由晶圓傳送裝置取 出反應室外。本發明採用鈦鋁氮化物（TiAIN)為材料製作吸 附電極，具有極高的硬度以及極佳的抗氡化能’力，可在高 溫環境中維持穩定而能延長設備的使用壽命，減少維修更 新的頻率。 本發明所提出的設備組合可以應用於許多種不同的製 程反應室’包含物理氣相沈積製程（PVD)、化學氣相沈積製 程（CVD)、離子植入法、除氣、冷卻或蝕刻反應室等半導體 晶圓製程反應室’特別適用於高溫製程之中，然而並不限於 以上所提出的應用範圍。 以上所述僅為本發明之較佳實施例而已，並非用以 限定本發明之申請專利範圍；凡其它未脫離本發明所揭示 之精神下所完成之等效改變或修飾，均應包含在下述之申 請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) 展---- 訂---------線— 本紙張尺度適用_國國家標準（CNS)A4規格（210 X 297公t )6 h 6 7 A7 _B7__ V. Description of the invention () It is heated to the required operating temperature in the manufacturing process. In general, the contact portion of the support element 200 is made of a semiconductor material, a ceramic material, or a mixed material. In a preferred embodiment of the present invention, a ceramic material such as aluminum nitride can be used as a suitable material for the support element 200. In another embodiment, an emulsified (T i Ο2) -like metal can also be used. Emulsions of agina (a 丨 umina), or other ceramic materials with similar impedance are made. In order to further control the temperature parameter, a cooling element 16 0 ′ and a heating element 150 are also set in the electrostatic chuck to adjust the temperature. In one embodiment, the cooling element 160 is a fluid storage tank (usually a water storage space), and the temperature of the cooling element 160 can be adjusted through the circulation adjustment of the cryogenic fluid (generally water) in cooperation with the setting of the fluid conveying pipe 165. 》 Under the control of the temperature controller 170, the temperature conditions required for the manufacturing process can be controlled more accurately through the action of the heating element 150 and the cooling element 160. In addition to the heat conduction effect through the contact area of the support member 200, in order to enhance the thermal conductivity, a heat transfer gas can be introduced into the surface 101 of the suction cup 110 and the crystal 圊 9 ◦ 0 through the gas transmission channel 132 and the gas to the inlet 130 The gaps between the rear surfaces are evenly distributed through the heat transfer gas distribution groove 120. In addition, a pair of flow chambers 180 can also be formed in the support member 200, and the cooling effect can be performed by the effect of air convection. Using the above-mentioned electrostatic chuck with the smallest contact area (MCA --- 1 .--------- Λ ---- I --- order ----- I --- I (please Please read the notes on the back before filling this page) This paper size is applicable to the national standard (CNS) A4 specification (210 X 2W mm) 4 F 6 66 7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 Description of the invention () E, chuck) as a workpiece fixing jaw 'can use electrostatic attraction to firmly adhere the wafer to the machine equipment of the process reaction chamber, and can cooperate with the use of thermal control elements in the workpiece fixing equipment to make the process temperature Parameter control is more precise and uniform. When the wafer process is finished, the remote power supply is depressurized or turned off, so that the wafer can be freed from the yoke of the chuck, and then the wafer is lifted by the lifting bolt (not shown) under the chuck, leaving the upper surface of the chuck 110. Then, the reaction chamber is taken out by the wafer transfer device. The invention adopts titanium aluminum nitride (TiAIN) as a material to make an adsorption electrode, which has extremely high hardness and excellent anti-clogging ability, can maintain stability in a high-temperature environment, can extend the service life of equipment, and reduce maintenance and updates. Frequency of. The device combination proposed by the present invention can be applied to many different process reaction chambers including physical vapor deposition process (PVD), chemical vapor deposition process (CVD), ion implantation, degassing, cooling or etching reaction chamber The semiconductor wafer process chamber is particularly suitable for high temperature processes, but it is not limited to the above-mentioned application range. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application. (Please read the precautions on the back before filling this page) Exhibition ---- Order --------- Line — This paper size applies _ National Standard (CNS) A4 (210 X 297 metric t)