461009 A7 ______ B7 五、發明說明（） 相關申請案： 本申請案為1996年U月5日提出，為申請號第 08/744,059號之美國專利申請案的部份續案申請案；本申 請案亦為1998年1月29日提出、申請號為第〇9/〇15,8〇2 號之部份續案申請；而該案則為1 996年1 1月25日提出、 為申請號第08/755,716號之美國專利申請案之續案；該案 又為1995年1月31日所提出之美國專利申請案，其序號 為08/381,786，而遠案又為1994年1月.31日所提出之美 國專利案之序案’其序號為08/189,562，如今已放棄；在 此將上述申請案併入以利參考之用。 發明領域461009 A7 ______ B7 V. Description of the invention () Related applications: This application was filed on U.S. on May 5, 1996, and is part of the application for renewal of US Patent Application No. 08 / 744,059; this application It was also a part of the application for renewal filed on January 29, 1998, with application number 009 / 〇15,802; and the case was filed on January 25, 1996, and was filed under the application number Continuation of the US patent application No. 08 / 755,716; this case is the US patent application filed on January 31, 1995, with serial number 08 / 381,786, and Yuan case is January 31, 1994 The serial number of the proposed US patent case, whose serial number is 08 / 189,562, has now been abandoned; the above application is incorporated herein for reference. Field of invention
I 本發明係關於用以支撐工件之靜電吸盤，更特定說 來’本發明係關於具有改良之防穿洞的花線電路（flex circuit) ’及具有能促進熱自半導體晶圓轉移至吸盤的表 面圖案。 ---L---!---‘--{' 裝--------訂---------線{ (請先閲讀背面之注意事項再填寫本頁) 景 背 明 發 經濟部智慧財產局員工消費合作社印製 中 其 件 Η 撐 支 以 用 被 泛 廣 中 用 應 J-一g~ 種 各 在 盤 吸 電 靜 定方 固的 圓 件 晶 Η 體定 導固 半盤 將吸 以·電 ’ 靜 中。 器中 圖 室 繪.應 腦反 電程 在製 定圓 固晶 張體 紙導 將半 含 一 包於 電極至 中電推 其及件 ， 件工 力工將 引在荷 吸別電 電分的 靜以性 一，極 成上同 形極不 間電此 之個， 盤多荷 吸或電 及一的 件的性 工盤極 在吸同 用至不 利加生 是被感 式壓上 準 標 家 國 國 中 一用 |適 I度 尺 張 紙 本 釐 公 97 2 X 10 (2 格 規 461009I The present invention relates to an electrostatic chuck for supporting a workpiece, and more specifically, the present invention relates to an flex circuit with improved puncture prevention and a method for promoting heat transfer from a semiconductor wafer to a chuck. Surface pattern. --- L ---! ---'-- {'Outfit -------- Order --------- Line {(Please read the notes on the back before filling this page) Jingbei Mingfa, the Intellectual Property Bureau of the Ministry of Economic Affairs, the employees' cooperatives in the printing of the pieces Η support to be used in a wide range of applications J-a g ~ a variety of circular pieces of static crystal fixed solid absorption The guide half plate will be sucked into the electricity. The drawing in the device is shown in the drawing. Ying brain anti-electrical process is in the development of circular solid crystal sheet paper guide will contain a pack of electrodes to CLP to push its parts, the labor force workers will be guided by the static electricity of the battery. Sex one, the very same shape and the same electricity, this one, the multi-charge suction or electricity and one of the sex work poles in the suction and the use of unfavorable accretion is inductively pressed on the standard home country. With a suitable 1 degree ruler paper centimeter 97 2 X 10 (2 grid gauge 461009
吸盤處，因此能將工件加以固定。 在半導體晶圓設備中’靜電吸盤在 位至一支撐器，其中支 π將阳圓柑 U為 禕器可由電極（靜電吸盤丘用中） rrvm ^ 應用在蝕刻、化學氣相沉積 ()、離子佈植及物理氣相&積（州）中。 、 的圓處理中所用的材料及製程對溫度是極度敏咸 的’製程中晶圓-旦有不良熱 “ 鉍蚪外A η 听7 %王呼吳些所用的 ==經過度的溫度波動，晶圓製程系統的_ ::二壞，進而使得晶圓也遭致破壞。要得到晶圓及 吸盤 < 間的最佳熱轉移’這時可利用非常大的靜電吸 以使晶圓表面與吸盤支撐表面的實體接觸面積變得 大。但很不幸地，吸盤及晶圓間因不夠平滑而仍存有 缝，這大大妨礙了上述之最佳熱轉移。 在製程中若想要達到更好的晶圓冷卻效果，這時 將鈍氣（如氦）抽至晶圓f支撐表面之間的間隙，因為鈍 能當作將晶圓的熱傳至吸盤的一種熱轉移媒介，而鈍 的熱轉移效果優於真空之轉移特性。吸盤的輪廓表^ 常能使熱轉移增至最大，並避免熱轉移氣體跑進周圍 低氣壓環境（亦即作用反應室）。但若要進一步強化冷卻 式，這時可以將吸盤經由支撐器内的導管利用水冷卻 這樣的冷卻方式稱之為背部氣體冷卻。 靜電吸盤通常具有一花線電路（flex circuit)，其由 電材料（如銅）组成，且讀導電材料封入一柔性介電材 (如聚酿亞胺）中。花線電路為具有雕紋之表面，它能因 力 最 隙 可 氣 氣 通 方 導 料 為 第3頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） , .^ S--------t----------If.··.'----------____ _ ——————————— (請先閱讀背面之注意事項再填寫本頁)At the suction cup, the workpiece can be fixed. In the semiconductor wafer equipment, the electrostatic chuck is in place to a support, in which π will be used as an electrode, which can be used by electrodes (in electrostatic chucks) rrvm ^ applied to etching, chemical vapor deposition (), ion Planting and physical vapor & product (state). The materials used in the round processing and the process are extremely sensitive to temperature. 'Wafer in the process-once there is bad heat.' Bismuth 蚪 outside A η Listen 7% Wang Huwu used == temperature fluctuations in degrees, Wafer processing system _ :: Second bad, and then the wafer is also damaged. To get the best thermal transfer between the wafer and the chuck < At this time, a very large electrostatic suction can be used to make the wafer surface and the chuck The physical contact area of the support surface becomes large. Unfortunately, there is still a gap between the chuck and the wafer due to the lack of smoothness, which greatly hinders the above-mentioned optimal heat transfer. If you want to achieve better in the process Wafer cooling effect. At this time, blunt gas (such as helium) is drawn to the gap between the supporting surfaces of the wafer f, because blunt energy can be used as a heat transfer medium to transfer the heat of the wafer to the chuck, and the blunt heat transfer effect Better than vacuum transfer characteristics. The outline of the suction cup can often maximize the heat transfer and prevent the heat transfer gas from running into the surrounding low-pressure environment (that is, the reaction chamber). However, if you want to further strengthen the cooling type, you can Pass the suction cup through the holder The cooling method of the duct using water cooling is called back gas cooling. The electrostatic chuck usually has a flex circuit, which is composed of an electrical material (such as copper), and the conductive material is enclosed in a flexible dielectric material (such as Polyvinyl imine). The fancy circuit is a carved surface, which can be used for the most air gap. The guide material is page 3. This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297). Mm),. ^ S -------- t ---------- If. ·· .'------------____ _ —————— ————— (Please read the notes on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 其特定通道及吨而以㈣氣 表面，並進入前述之間隙空間而達成的整個底部 的效果。花線電路可以去★ B強身部氣體冷卻 為各種不同的型者 份支撐表面的平板，就推 ^ 如橫跨大部 將熱轉移氣流散播至整彻θ 衣次輻射臂，以 個晶圓底部表面之上。花缓&踗 的圖案式表面包含如肋 上化線％路 ^ ^ ^ ^ 、凹槽式或通道型的輪廓， 以進一步^升熱轉移氣流的均勻度。 習用吸盤之缺點之— τ在/、層狀花線電路的圖案表面 為介電材料，如聚醯亞妝 θ ^ 胺。這在重覆對晶圓處理系統之 晶圓掛位之後，通常用认IE1 士、 ;見存之花線電路的介電材料容 易造成穿洞’而在靜電吸 包及盤<化線電路的上介電材料的 穿孔會造成吸盤電極及θ 、 贿圓足間的短路。由於短路的存The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed its specific passages and tons to use the radon surface and entered the aforementioned gap space to achieve the entire bottom effect. The fancy circuit can go to B. The body gas is cooled to a flat plate that supports the surface of various types of components, and it is pushed ^ If the heat transfer airflow is spread across a large part to the entire θ-line radiation arm, the bottom of the wafer Above the surface. The patterned surface of the flower slow & 包含 includes, for example, a ribbed line, a groove, or a channel-shaped profile to further increase the uniformity of the heat transfer airflow. Disadvantages of conventional suction cups-τ is a dielectric material on the pattern surface of the layered filigree circuit, such as Polyamine θ ^ amine. After repeating the mounting of wafers to the wafer processing system, it is common to use IE1, the dielectric material of the existing flower line circuit is easy to cause holes, and the electrostatic suction package and the disk < line circuit The perforation of the upper dielectric material will cause a short circuit between the chuck electrode and θ and round feet. Due to short circuit
在，使得對吸盤所加的雷R A 3¾壓會傳至晶圓上，而導致晶圓 的破壞。想要修補上述之短路，這時只能將吸盤加以置 換，但這又會造成生產的停滯及產能的下滑。 所以習知之半導體晶圓處理吸盤亟需具有一具多輪 廓之花線電路，且該花缭電路必須能防止穿洞現象的發 生’並需具有邊製造上述之吸盤的方法。 瘀明目的及概沭： 前述所&之習用缺點可由一防穿洞之靜電吸盤克 服’該靜電吸盤具有一連續之工件支撐表面，該工件表面 具有至少一凸出區域’以支撐晶圓的背面。 該設備至少包含一座檯’其具有一表面，該表面具有 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----^---r---_1人裝· II! (請先閱讀背面之注意事項再填寫本頁) -IT —訂---------線( 461009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 至少一凸出區域，並在該座檯表面上JL + 、有一防穿洞之花線 電路。該防穿洞花線電路至少包含〜笛 ， 弟—介電層，位於_ 導電層之下方；及一防穿洞層，位於診壇兩 層之上方。該 防穿洞層以包含一芳香族纖維的編織#细_ 竹為佳’一第二介 電層位於該防穿洞層之上，並定義一速絡、 避續<工件支撐表面 的所在位置。 此外，靜電吸盤具有至少一熱轉移备、云^ 7礼成阜’其經由吸 盤延伸至工件支撐表面。座檯表面的凸+ π U ~ J ο出區域能使當吸盤 吸住晶圓時，工件不會阻擋熱轉移氣汸5 B， 礼成至晶圓背侧的路 徑。故而，氣流能均勻分饰在所有吸盤类& π , 逊衣面非凸出區域， 並填滿晶圓及吸盤表面沾空隙空間。 本發明用以製造具有防穿洞花線電路之靜電吸盤的 方法包含形成一層介電層、一防穿洞層及—導電層；在導 電層上蝕刻一電極模型；隨後將另一介電層附著至電極模 型上’以形成一花線電路；在餘電吸盤的座檯表面内製作 一圖案；並將前述之花線電路層疊至雕紋（圖案化之座楼 表面）。靜電吸盤座檯表面之圖案包含凸出區域與非凸出 區域’花線電路則附著至座檯表面，並與座檯表面之圖案 相契合。故而’靜電吸盤之支撐表面包含凸出區域及非凸 出區域’其中凸出區域之總表面積較非凸出區域之總表積 為小。 本發明的提出滿足了常久以來所亟需能有效將晶圓 箝位至一靜電吸盤的防穿洞設備，並能提供較佳之熱轉移 特性。更進一步說來，花線電路的防穿洞層能使電極不與 第5頁 本紙張尺度週用中國國家標準（CNS)A4規格（210 X 297公釐） Γ „--Μ----Λ------訂------- (請先閱讀背面之注意事項再填寫本頁}Now, the Ra R 3 ¾ pressure applied to the chuck will be transmitted to the wafer, resulting in the destruction of the wafer. If you want to repair the short circuit mentioned above, you can only replace the suction cup at this time, but this will cause production stagnation and decline in production capacity. Therefore, the conventional semiconductor wafer processing chuck desperately needs to have a multi-profile fancy circuit, and the fancy circuit must be able to prevent the occurrence of through-holes, and it must have a method for manufacturing the above-mentioned chuck. The purpose and outline of the stasis: The above-mentioned conventional shortcomings can be overcome by an anti-penetrating electrostatic chuck 'the electrostatic chuck has a continuous workpiece support surface, and the workpiece surface has at least one protruding area' to support the wafer back. The device contains at least one table, which has a surface with the paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---- ^ --- r ---_ 1 II! (Please read the precautions on the back before filling out this page) -IT —Order --------- Line (461009 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (at least one A protruding area, and JL + on the surface of the seat, a piercing-proof circuit. The piercing-proof circuit includes at least a ~ di, a dielectric layer, which is located below the conductive layer; and a An anti-perforation layer is located above the two layers of the diagnostic altar. The anti-perforation layer is a woven #fine_ bamboo that contains an aromatic fiber. A second dielectric layer is located on the anti-perforation layer and defines Yisuluo, avoid continuation < the location of the workpiece support surface. In addition, the electrostatic chuck has at least one heat transfer device, which is extended to the workpiece support surface via the suction cup. The convexity of the table surface + π U ~ J ο The output area can make the workpiece not block the heat transfer gas when the chuck is holding the wafer. Round back side path. Therefore, the airflow can be evenly distributed in all the chucks & π, non-protruding areas of the top surface, and fill the wafer and the surface of the chuck with the void space. A method of electrostatic chuck for a filigree circuit includes forming a dielectric layer, an anti-penetrating layer, and a conductive layer; etching an electrode model on the conductive layer; and subsequently attaching another dielectric layer to the electrode model to form a Spiral circuit; make a pattern on the surface of the seat of the remaining electric chuck; and stack the aforementioned flower circuit to the engraving (patterned surface of the building). The pattern on the surface of the electrostatic chuck table includes protruding areas and non- The “protruding area” flower line circuit is attached to the surface of the seat and matches the pattern on the surface of the seat. Therefore, the “support surface of the electrostatic chuck includes a protruding area and a non-protruding area”. The total surface area of the protruding area is small. The present invention satisfies the need for anti-penetration equipment that can effectively clamp wafers to an electrostatic chuck for a long time, and can provide better heat transfer characteristics. In one step, the anti-penetrating layer of the fancy circuit can prevent the electrode from meeting the Chinese National Standard (CNS) A4 specification (210 X 297 mm) on page 5 of this paper. Γ „--M ---- Λ ------ Order ------- (Please read the notes on the back before filling this page}
經濟部智慧財產局員工消費合作社印製 6 10 0 9 五、發明說明（ 晶圓形成短路，這使得吸拖▲ 盤的使用壽命因之增長、晶圓的 破壞率下降、反應室停掴 宁檻時間縮短、並從而提升產品之產 出。 座 圖式簡軍說明= ' 在參閲詳細說明及籲__、 λ 不 < 配&說明之後，本發明將變 得更容易了解，其中： 第1圖為本發明在靜恭孤血丄 %及盤中所提出之花線電路的俯瞰 圖； ---i---^---I--.-------- ^----------------I.---l· (請先閱讀背面之注意事項再填寫本頁) 第2圖為第1圖中沿線2 2所截之靜電吸盤的圖；及 第3A-3E圖說明本發日日、^ 發明<靜電吸盤之一實施例的後續製 造步驟，且以部份側邊示意圖表出。 凡相 為便於讀者對說明 同之元件或零組件 及圖示之了解，在圖示及説 皆以相同之數字標出。 圖號對照說明= 100 靜電吸盤 101 座檯多輪廓表面 102 座檯 103 晶圓接觸區 104 上舉緣 106 肋狀物 107 晶圓支撐表面 108 熱轉移氣流阜 109 空間 , no 肋狀物 111 晶圓 112 導電層 . 114 第一介電層 115 弟一黏著層 116 防穿洞層 118 第二介電層 第6頁 461009 A7 R7 五、發明說明（ 120 花線電路 3〇〇 層疊結構 124 周圍邊緣 發明詳細說明： 第1圖及第2圖為—靜電吸盤100的前視圖及其剖面 圖，用以支撐並靜電式地將工件固定住，以進行製程步 驟’這工件可如一半導體晶圓，其位於一座檯1〇2之上， 並位於—高密度電漿作用反應室（未顯示）内。更特定說 來’第2圖所示為第1圖沿線2 _ 2處所截之靜電吸盤處之 剖面圖’其中半導體晶圓m以虚線表示。請參閱第i圖 及第2圖’以能對本發明獲致更進一步之了解。 若欲對電漿作用反應室及其在處理晶圓時之動作有 進一步的了解’請參閱美國專利第4,842,683號之詳細說 明’在此將該案併入以供參考。該專利案舉例說明美國應 用材料公司所製造的高密度電漿作用反應室。 靜電吸盤100包含一本發明提出之花線電路12〇，晶 圓111就座落於其上方。更特定說來，吸盤10〇包含一座 棱102’座檯1〇2上具有一多輪廓表面ι〇1，該表面ι〇1 上有花線電路120附著於其上。花線電路包含一第一介電 層114、一導電層112、一防穿洞層116及一第二介電層 1 1 8 〇 層疊結構包含第二介電層118、防穿洞層116及導電 層112，其組合體在以下將有討論。導電層112為一導電 材料構成，如銅，且其厚度為均勻，约為5微米。導電層 第7頁 (請先閱讀背面之注意事項再填寫本頁) 裝----r—ί訂---------線(、 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準 v 00*7 »\ aPrinted by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 10 0 9 V. Description of the invention (Wafer is short-circuited, which makes the suction tray ▲ increase in the service life of the disk, the destruction rate of the wafer decreases, and the reaction chamber is stopped. The time is shortened and the output of the product is thereby improved. Brief description of the block diagram = 'After referring to the detailed description and appealing __, λ not < with & description, the present invention will become easier to understand, of which: Fig. 1 is a bird's-eye view of the flower line circuit proposed by the present invention in Jing Gong's blood and blood; --- i --- ^ --- I --.-------- ^ ---------------- I .--- l · (Please read the precautions on the back before filling this page) Figure 2 is taken along line 2 2 in Figure 1 Figures of the electrostatic chuck; and Figures 3A-3E illustrate the subsequent manufacturing steps of the embodiment of the invention < Electrostatic chuck > on the date of issue, and are shown in partial schematic diagrams. The understanding of the components or components and the illustrations are marked with the same numbers in the illustrations and illustrations. Figure number comparison description = 100 electrostatic chuck 101 table multi-contour surface 102 table 103 wafer contact Area 104 Upper lifting edge 106 Rib 107 Wafer support surface 108 Thermal transfer air flow 109 Space, no Rib 111 Wafer 112 Conductive layer 114 First dielectric layer 115 Adhesive layer 116 Anti-penetrating layer 118 Second dielectric layer Page 6 461009 A7 R7 V. Description of the invention (120 Filament circuit 300 laminated structure 124 Peripheral edge Detailed description of the invention: Figures 1 and 2 are the front view of the electrostatic chuck 100 and its section Figure, used to support and electrostatically fix the workpiece to perform the process step 'This workpiece can be like a semiconductor wafer, which is located on a stage 102 and located in a high-density plasma reaction chamber (not shown) ). More specifically, "Figure 2 shows a cross-sectional view of the electrostatic chuck taken along line 2_2 of Figure 1", where the semiconductor wafer m is shown in dotted lines. Please refer to Figures i and 2 'To get a better understanding of the present invention. If you want to know more about the plasma reaction chamber and its operation when processing wafers', please refer to the detailed description of US Patent No. 4,842,683. For reference This patent exemplifies a high-density plasma reaction chamber manufactured by Applied Materials. The electrostatic chuck 100 includes a filigree circuit 12 proposed by the present invention, and a wafer 111 is located thereon. More specifically, The suction cup 10o includes a rib 102 'with a multi-contoured surface ι01 on the pedestal 102, with a filigree circuit 120 attached thereto. The filigree circuit includes a first dielectric layer 114 , A conductive layer 112, a through-hole prevention layer 116, and a second dielectric layer 118. The stacked structure includes a second dielectric layer 118, a through-hole prevention layer 116, and a conductive layer 112, and the combination thereof will be described below. discuss. The conductive layer 112 is made of a conductive material, such as copper, and has a uniform thickness of about 5 microns. Conductive layer, page 7 (please read the precautions on the back before filling this page). ---- r—ί order --------- line (printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs) Paper size applies Chinese national standard v 00 * 7 »\ a
Μ :< ί 0 V 丄 \ ,D Λ Η 1 - t I 461009 A7 五、發明說明（ 112係用以形成靜電吸趑的電極用；亦即，導電層需經過 遮罩及蝕刻過程以得到電極模型。黏著層i 15將層疊結構 的導電層側黏至第一介電層114，而介電層則由另— 黏著層114.黏至座檯表面1〇1。 防穿洞層116用以保護基材（如晶圓m),而不受基 材處理時所產生的銳利碎片穿插成洞。防穿洞層i丨6以包 含一聚合物為佳，其中此聚合物具有一高張力強度、黏 性、剛硬性及不易破裂之特性，其中防穿洞層丨丨6的高剛 硬性及黏性相對於鋒利碎片之衝擊所產生的聚醯胺穿洞 效應較低。 水醯胺在h供咼硬度、剛硬度、黏性、強硬性、優異 的化學相容性及與聚合物的強硬黏著上為一頗佳之選 擇，其至少包含：一高分子重量聚合物，其具有碳氫 (hydracarbon)鏈’該鏈包含有氨或_c〇NH_分子群。更佳的 做法是，防穿洞層至少包含能更有效防穿洞的高芳香族聚 醯胺’因為它們比起傳統的聚醯胺來說具有較高的硬度。 此高芳香族聚醯胺可以美直接置於或覆蓋於電極之上的 連續平面層型式，也可以是覆蓋電極之往狀纖維層的型 式。若高芳香族聚醯胺至少包含氨材質則為更佳。防穿洞 層可以是一片芳香族材料之型式’或也可為芳香、族纖維層 之型式。芳香族材料片及/或纖維至少包含高芳香族聚縫胺 鏈，該鏈最好與該片平面相為平行排列，或與纖維之縱軸 平行。芳香族之高芳香族分子鏈的‘堅硬聚合物具有優越之 防穿洞能力。芳香族材料片或纖維若能包含Dup〇nt de 第8頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公愛） 2?先閱讀背面之注意事項再填寫本頁} I, ,---—C (裝-----—ί ---------線(' 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 Α7 Β7 五、發明說明（Μ: ί 0 V 丄 \, D Λ Η 1-t I 461009 A7 V. Description of the invention (112 is used to form an electrostatic absorption electrode; that is, the conductive layer needs to undergo a masking and etching process to obtain Electrode model. Adhesive layer i 15 adheres the conductive layer side of the laminated structure to the first dielectric layer 114, and the dielectric layer is adhered to the surface of the table 101 by another adhesive layer 114. The anti-through hole layer 116 is used In order to protect the substrate (such as wafer m) from being penetrated by sharp fragments generated during substrate processing, the anti-penetration layer i 丨 6 preferably contains a polymer, wherein the polymer has a high tension The strength, viscosity, rigidity and non-breakability characteristics, among which the high rigidity and viscosity of the anti-penetration layer 丨 丨 6 are relatively low compared with the impact of sharp shards caused by the penetration of polyamines. It is a good choice for hardness, stiffness, viscosity, toughness, excellent chemical compatibility, and strong adhesion to polymers. It contains at least: a high molecular weight polymer with hydrocarbon ( hydracarbon) chain 'This chain contains ammonia or _c〇NH_ molecular groups. It is better to prevent penetration Contains at least highly aromatic polyamides that are more effective in preventing penetration, because they have a higher hardness than traditional polyamides. This highly aromatic polyamide can be placed directly on or cover the electrode The continuous planar layer type on it can also be the type of the facing fiber layer covering the electrode. It is better if the highly aromatic polyamine contains at least ammonia. The anti-penetration layer can be a type of aromatic material 'or It can also be of the type of aromatic or aromatic fiber layer. The sheet of aromatic material and / or fiber at least contains a high aromatic polyamine chain, and the chain is preferably arranged parallel to the plane of the sheet or parallel to the longitudinal axis of the fiber. The aromatic hard polymer with high aromatic molecular chain has excellent anti-penetration ability. If the sheet or fiber of aromatic material can contain Dupont de page 8 This paper is applicable to China National Standard (CNS) A4 specifications ( 210 X 297 public love) 2? Please read the notes on the back before filling out this page} I,, --- C (installation -----— ί --------- line ('Ministry of Economy Printed by Intellectual Property Bureau's Consumer Cooperatives Α7 Β7 V. Invention (
Nemours公司所生產的KEVLAR®或NOMEX®芳香族材質 為佳。例如，Kevlar —般都具有400X 1 03psi的張力強度、 22g/denier的乾黏度、2:5%的延展度及975g/denier的硬 度；Nomex 則具有 9〇xl03psi 的張力強度、4-5.3g/denier 的乾黏度及0.85g-cm的硬度。aramid材料通常係得自於 苯二胺及對苯二甲氯。 在較佳的圖示中可以看出芳香族聚醯胺層至少包含 一網狀纖維層，如紙、毛、布料或編織結構。一般可以發 現網狀含纖維層所提供之硬度、不易破壞性及防穿洞能力 較佳。含纖維層可以是紙或毛毯結構，其至少包含非編 織、任意方向、短纖維或鬚毛，其至少包含嵌入聚合物中 的聚醯胺纖維。當芳香族聚醯胺為纖維型式時，所園繞的 聚酿胺材料就用以將纖維固定住。更佳的做法是，聚合物 材料能在用以固定表面及芳香族聚醯胺材料之間提供良 好的附著能力及化學相容性^ 在較佳的配置中，以具紙或毛毯結構的芳香族纖維來 製作吸盤就顯得省事多了’因為要切除或以雷射消除這種 任意定向的結構是很容易的事。另一方面，芳香族纖維可 以包含一定向之編織結,’如布料或編織式樣。DuP〇nt de Nemours公司所生產之THERMOUNT®布料即為一合適之 布料’其具有40-60的紗、40·60丹尼爾（denier)、5〇 6〇【⑴ 及60-80的緯紗，但具方向性之結構較難以切斷，且編織 結構在平行於纖維平面之特性較能預測，因為纖維的任意 定向可以預知。 第9頁 (請先閱讀背面之注意事項再填寫本頁) -裝-----—_—訂---------線{ 經濟部智慧財產局員工消費合作社印製 4 6 1 00 9 A7 B7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明（ 在本發明之一實施例中，所使用的防穿洞層116為 Thermount®，其為Dupont公司的註冊商標，為較適用的 一種防穿洞層選擇’因為其尺寸穩定且其重量低。 Thermount®的張力強度約為8〇xl〇3psi 、其乾黏度約為 10g/denier、其硬度約為40-500g/denier、且其防破壞軔度 约為0.79g-cm。另一方說來，其它具有類似之物理特性及 介電特性之防穿洞材料也可用以當作防穿洞層i丨6，如 Kevlar ° 在形成層疊結構時，第二介電層丨！ 8係置於防穿洞層 116之頂部’防穿洞層116又置於導電層112之頂部。這 兩層共同加熱並一塊壓至堆疊結構。Thermount®是具環氧 基材料，其具有一 Kelvar布料混雜在環氧基樹脂之内，所 以Thermount®在層膜加芦至ho —n5〇c之間、且利用n〇 至200psi的壓力壓在一塊時，能接附至導電層112及介電 層118,其中第二介電層118具有—上表面，其定義一工 件支撐表面107的位置。 介電層114及11 8以為電性絕緣之聚合材料為佳如 聚醯亞胺、聚醚、聚二乙《、多硫化物、聚幾酸酯、聚苯 乙烯、尼龍、聚氯乙晞、聚丙稀、對苯二甲酸酯、聚乙烯、 氟化丙烯、異量分子聚合物、纖維素、三乙酸脂、矽酮及 橡膠。較佳的支撐表面材料至少包含—層的聚酿亞胺，當 熱轉移流體導入基材111及具彈性之聚醯亞胺U8之間二 空間109時，聚醯亞胺在靜電箝位壓力之下具有足夠彈性 而被輕微破壞’以提供增強之熱轉移。另聚醯亞胺U8更 第10頁 !l· — I I I Γ |人 裝· I — I Γ I l· 1 訂------線、 (請先閱讀背面之注意事項再填寫本頁} 4 6 1 q ο 9 A7 —— _ B7__' 五、發明説明（） 提供了優異的抗溫度及介電特性。例如，聚醯亞胺具有高 介電崩潰強度，約為3,〇〇〇至3,500伏特/密爾，這使得其 所使用的薄層可以將靜電吸引力增至最大。聚醯亞胺也能 抵抗超過lOOt之溫度，且更能抵抗超過2〇(Γ(：2溫度， 這使得吸盤可以操作在高溫之下。若聚合物具有高熱導電 度，使得製程中基材上所產生的熱能經由吸盤消耗掉則為 更佳。熱導電度以至少4 〇1〇Watts/m/C)K為較適當。此 外，介電層114及118在超過50C〇之溫度時應足夠穩定。 此外，第一及第二介電層114及118所用的介電材料為片 狀聚醯亞胺，其品牌名稱為UPILEX⑧’其為日本ube工 業有限公司的產品，而較佳的介電層厚度則是在〇 〇们 忖。 在將花線電路120接附至座檯1〇2之前，吸盤1〇〇之 圖案結構由座檯表面101之雕紋所增強，以形成輪廓，如 一或多個肋骨狀106及輪廓。這樣的吸盤可參見美國 專利申請案08/744,039所揭示之内容。其中座檯表面ι〇ι 被雕紋成某特殊圖案，該圖案可讓花線電路12〇置於其 上’而兩者在形體上互能相契。更特地說來，第2圖所顯 示約1米爾、寬為1.5至2毫米之間的邊緣為較佳之模型， 其中南度可以隨花線電路12〇而有變更；寬度則隨適當冷 卻用時，晶圓需曝出至背部氣流之區域大小而有所不同。 以一圖案1，座檯1〇2在其外徑上有一上舉緣1〇4， 此上舉緣1〇4之直徑大約相當於待處理晶圓之直徑，所以 花線電路12〇的周圍邊蠔m就跟隨邊緣1〇4的輪靡，使 第11頁 _本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐" -- (請先閲讀背面之注意事項再填寫本頁) 裝----I---'l 訂----- 經濟部智慧財產局員工消費合作社印製 4 6 1 009 A7 ___ B7 五、發明說明（ 得晶圓111經由與花線零路1) Λ m m Α , ’ 周圍邊緣122的接觸而由 邊緣支撐。吸盤100也包含至，卜 A it 4* -£* 主乂 一個阜108，以將熱轉移 氣流經由吸盤1 00導至晶圓虑却电 ^ 部表面。在本發明之一較佳 實施例中，在周圍邊緣6 ^ 遭寺距圍繞排列36個阜，其 中6個阜等距輻射朝向周圍邊 J间建緣122的内侧，而1個阜 位於花線電路120的中央。當晶ηΐι a ， 田明囫111置於吸盤100上時， 晶圓僅僅由邊緣104所支撐，所丨、}、 η ^ 所以空間1 〇9的體積就形成 在晶圓111及晶圓支撐表面1〇7、 ， t 吗iu7又上。當電源加至電極（亦 即導電層U2)，電源就形成靜電吸引力，該電力能將晶圓 吸至晶圓支撐器表面107，此靜電吸引力也稱作箝位力， 因為花線電路12〇的介電材料為半柔性的，使得在緣ι〇4 上對晶圓接觸區103形成相當緊密的封貼。故而當晶圓 111被箝至吸盤⑽時，在晶圓及晶圓支撐表面1〇7的花 線電路之間的空間就由反應室真空所密封住。 為了在對晶圓箝位的晶圓支撐表面107上形成圖案， 座接102之表面1〇1最好能雕紋成—序列凸出及非凸出區 域，如一或多個肋狀106,及11〇凸出物位於其上，肋狀物 106及110在座檯102上可能是連續的或斷成數個輻射狀 部份。如此，接觸至晶圓背部的支撐表面之凸出區域小於 非凸出區域之大小。故而，晶圓背部大致由轉移媒介所接 觸，如氬或氦。 第3A-3E圖中說明用以形成花線電路120及接附花線 電路120至座檯102的步驟。此步驟開始於一預製造的介 電層118、防穿洞層116及導電層112的層疊結構3〇〇。 第12頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚）KEVLAR® or NOMEX® aromatic materials from Nemours are preferred. For example, Kevlar generally has a tensile strength of 400X 103 psi, a dry viscosity of 22 g / denier, a 2: 5% elongation, and a hardness of 975 g / denier; Nomex has a tensile strength of 90 x 103 psi, 4-5.3 g / denier dry viscosity and 0.85g-cm hardness. Aramid materials are usually derived from phenylenediamine and p-xylylene chloride. In the better illustration, it can be seen that the aromatic polyamide layer includes at least one layer of network fibers, such as paper, wool, cloth, or woven structure. Generally, it can be found that the mesh-like fiber-containing layer provides better hardness, non-destructiveness and better ability to prevent penetration. The fiber-containing layer may be a paper or felt structure including at least a non-woven, an arbitrary direction, short fibers or a hair, and at least a polyamide fiber embedded in a polymer. When the aromatic polyamide is a fiber type, the wound polyamine material is used to fix the fiber. A better method is that the polymer material can provide good adhesion and chemical compatibility between the fixing surface and the aromatic polyamide material. ^ In a better configuration, the paper or felt structure has a good aroma. It is much easier to make suction cups based on fiber, because it is very easy to cut or eliminate this arbitrary orientation structure by laser. On the other hand, the aromatic fiber may contain a certain weaving knot, such as a cloth or a weaving pattern. The THERMOUNT® fabric produced by DuPont de Nemours is a suitable fabric. 'It has 40-60 yarns, 40.60 deniers, 5060, and 60-80 weft yarns, but with The directional structure is more difficult to cut, and the characteristics of the braided structure parallel to the fiber plane are more predictable, because the arbitrary orientation of the fiber can be predicted. Page 9 (Please read the precautions on the back before filling out this page) -Installation ------------ Order --------- line {Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 4 6 1 00 9 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (In one embodiment of the present invention, the puncture prevention layer 116 used is Thermount®, which is a registered trademark of Dupont Corporation. A more suitable anti-penetration layer is chosen because of its stable size and low weight. The tensile strength of Thermount® is about 80x103 psi, its dry viscosity is about 10g / denier, and its hardness is about 40-500g / denier. And its damage resistance is about 0.79g-cm. On the other hand, other anti-penetration materials with similar physical and dielectric properties can also be used as the anti-penetration layer, such as Kevlar ° In the formation of the stacked structure, the second dielectric layer 丨! 8 is placed on top of the anti-penetration layer 116 'the anti-penetration layer 116 is placed on top of the conductive layer 112. The two layers are heated together and pressed to the stacked structure .Thermount® is an epoxy-based material that has a Kelvar cloth mixed in epoxy Base resin, so Thermount® can be attached to the conductive layer 112 and the dielectric layer 118 when the film is added to the layer —ho-n50c and pressed under a pressure of no0 to 200psi. The second dielectric layer 118 has an upper surface, which defines the position of a workpiece support surface 107. The dielectric layers 114 and 118 are preferably polymeric materials that are electrically insulating, such as polyimide, polyether, polydiethylene, Polysulfide, polyisocyanate, polystyrene, nylon, polyvinyl chloride, polypropylene, terephthalate, polyethylene, fluorinated propylene, isomers, cellulose, triacetate, Silicone and rubber. The preferred supporting surface material contains at least one layer of polyimide. When the heat transfer fluid is introduced into the two spaces 109 between the substrate 111 and the flexible polyimide U8, the polyimide is It has sufficient elasticity under electrostatic clamping pressure to be slightly damaged to provide enhanced heat transfer. In addition, polyimide U8 is also page 10! L · — III Γ | men ’s clothing · I — I Γ I l · 1 Order ------ line, (Please read the notes on the back before filling out this page} 4 6 1 q ο 9 A7 —— _ B7__ '5 Description of the invention () provides excellent resistance to temperature and dielectric properties. For example, polyimide has a high dielectric breakdown strength, about 3,000 to 3,500 volts / mil, which makes it a thin layer to use It can increase the electrostatic attraction to the maximum. Polyimide can also resist temperatures exceeding 100t, and more resistant to temperatures exceeding 20 ° (Γ (: 2), which allows the suction cup to operate at high temperatures. It is better if the polymer has high thermal conductivity, so that the thermal energy generated on the substrate during the manufacturing process is consumed by the suction cup. The thermal conductivity is suitably at least 401 Watts / m / C) K. In addition, the dielectric layers 114 and 118 should be sufficiently stable at temperatures exceeding 50 ° C. In addition, the dielectric material used for the first and second dielectric layers 114 and 118 is sheet polyimide, and its brand name is UPILEX⑧, which is a product of Japan's ube Industry Co., Ltd., and the preferred dielectric layer thickness is It was at 〇〇 忖 忖. Before the filigree circuit 120 is attached to the base 102, the pattern structure of the suction cup 100 is enhanced by the engraving of the base surface 101 to form a contour, such as one or more rib-like shapes 106 and contours. Such a suction cup can be found in U.S. Patent Application 08 / 744,039. Among them, the surface of the table is carved into a special pattern, which allows the flower line circuit 120 to be placed thereon, and the two are mutually compatible in shape. More specifically, the edge shown in Figure 2 with a width of about 1 mil and a width of 1.5 to 2 millimeters is a better model, in which the south degree can be changed with the flower line circuit 120; the width is used with appropriate cooling time. The size of the area where the wafer needs to be exposed to the back airflow varies. With a pattern 1, the base 10 has an upper lifting edge 104 on its outer diameter. The diameter of the upper lifting edge 104 is approximately equal to the diameter of the wafer to be processed. The side oyster m followed the trend of edge 104, making page 11 _ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm "--(Please read the precautions on the back before filling in This page) ---- I --- 'Order ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 1 009 A7 ___ B7 V. Description of the invention Zero path 1) Λ mm Α, 'The surrounding edge 122 is contacted and supported by the edge. The suction cup 100 is also included. A it 4 *-£ * Mainly a Fu 108 to direct the heat transfer airflow to the suction cup 100. The wafer considers the surface of the electrical part. In a preferred embodiment of the present invention, 36 monks are arranged around the peripheral edge 6 ^, and 6 monks are equally spaced toward the peripheral edge J between the edges 122. Inside, and one monk is located in the center of the flower line circuit 120. When the crystal ηΐι a, Tian Ming 囫 111 is placed on the suction cup 100, the wafer is only supported by the edge 104,丨,}, η ^ So the volume of space 109 is formed on the wafer 111 and the wafer support surface 107, τ7 and iu7. When the power is applied to the electrode (that is, the conductive layer U2), the power is An electrostatic attractive force is formed, and the electric power can attract the wafer to the wafer support surface 107. This electrostatic attractive force is also referred to as a clamping force, because the dielectric material of the filigree circuit 120 is semi-flexible, which makes the edge attractive. 4 forms a fairly tight seal on the wafer contact area 103. Therefore, when the wafer 111 is clamped to the chuck ，, the space between the wafer and the filigree circuits on the wafer support surface 107 is controlled by the reaction chamber. Sealed by a vacuum. In order to form a pattern on the wafer support surface 107 for wafer clamping, the surface 101 of the socket 102 is preferably engraved into a series of convex and non-protruding areas, such as one or more The ribs 106 and 110 are on the projections, and the ribs 106 and 110 may be continuous or broken into several radial portions on the base 102. Thus, the projections on the supporting surface contacting the back of the wafer The area is smaller than the non-protruding area. Therefore, the back of the wafer is roughly connected by the transfer medium. , Such as argon or helium. The steps for forming the fancy circuit 120 and attaching the fancy circuit 120 to the pedestal 102 are illustrated in FIGS. 3A to 3E. This step starts with a pre-manufactured dielectric layer 118 and anti-penetration. The layered structure of the layer 116 and the conductive layer 112 is 300. Page 12 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297)
J --------r --------- 經濟部智慧財產局員工消費合作社印製 A7 461009 _________B7__. 五、發明說明（) 層疊結構300由對層膜118, 116及112堆疊形成，並將它 們在歷力（例如在200 psi下加至1650C)下加熱形成之，使 得防穿孔層11 6的環氧r基黏附至介電層118及導電層 112°在第3B圖中，導電層經由遮罩及蝕刻形成電極結 構’其中使用的是傳統的銅光阻及乾蝕刻製程。第3 C圖 中’黏著層1 1 5加至層疊結構300的電極侧，且第一介電 層114加至該黏.著層。適當的黏著物包含如丙婦酸，例如 含甲基丙缔酸脂、聚脂、聚醯胺、聚亞胺脂、環氧基、矽 • . 酮的黏著物及其漏合物。花線電路120係在1 70至220 psi 的壓力下、150至175GC的溫度下、並經過60至90分鐘 的時間壓抑電路所形成。 用以形成設備的適當壓力包含壓力鍋、板壓機或壓均 壓機壓力機，其中壓力鍋為最切用的，因為壓力鍋能在花 線電路組件上形成均勻的壓力。一般之壓力鍋至少包含抗 壓力不鏽鋼反應室，其具有1至10呎的直徑。一加壓之 非反應氣流如二氧化碳或氮都用以對壓力鍋加壓。適當的 壓力鍋包含"BARON AUTOCLAVES"，，，AOV INDUSTRIES" 及"MELCO STEEL'，。另也可以不採用壓力鍋，板壓機或均 壓壓力機也可用以完成花線電路120。當使用板壓（未顯示） k 時’壓力分佈片（如矽酮或不鏽鋼板）可以置於電性絕緣膜 上，以將壓印板壓力均勻分散至花線電路。均壓壓力機的 使用係將花線電路置入適當均衡鑄模帶中，並利用均壓壓 力機在帶中加至足夠的壓力。 在花線電路120形成之後，電路120就層疊至座檯1〇1 第13頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---：----卜-Iriok--------訂---------線， (請先閱讀背面之注咅2事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 61009 s A7 --------… B7_____. 五、發明説明（） 表面之上。例如在第3D圖中，—第二黏著層ιΐ5就加至 表面101;且在第3E圖中，花線電路12〇由一約2 〇〇〇psi 的壓力、並在163〇C的溫度中壓至座檯表自1〇1。第二黏 著層通落疋和第一黏著層相同。花線電路12〇壓至座檯表 面⑻系令60分鐘的時間〜戈至第二黏著層115設定好為 止。因為防穿洞層1 16已經固化，所以在層疊製程的壓力 及熱度中不會流動，但防穿洞層U6本身仍是柔性的，所 以其表面會順座檯表面1〇1上的雕紋所改變，於是花線電 路可以因如壓力鍋、板壓機或均壓壓力機而層疊至座檯表 面上。 所形成的結果是晶圓支撐表面1〇7上的圖案會對被箝 位尤晶圓1 11造成外加的支撐。更特地說來，晶圓u丨（第 2圖）支撐在外徑緣接觸,1〇3處及至少該處往内之另一點 (即肋狀物106及11〇)，且所形成之具輪廓工件支撐表面 107為緊鄰的（亦即不切割成通道或凹痕）。 為使製程中晶圓能達到冷卻的功效，必須要加—熱轉 移氣流（以氦為佳）經由熱轉移阜】〇8抽進晶圓i丨丨背部及 晶圓支撐表面107之間的空間109。由於肋狀1〇6及u〇的 存在，在晶圓及晶圓支撐表面1〇7之間的受控制間隙就可 以消除，所以晶圓表面區域曝至熱轉移氣流的面積就大大 增加’這使得氣壓分佈較習知技術更均勻且面積更大。所 以晶圓轉移至座檯的熱是更均勻的。該改善之圖案能對晶 圓溫度之不均勻性降低至約5 〇 C。 晶圓支撐表面107上也可以形成島狀分佈的模型，如 第Η頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----11 Γ I ^ ^ i 11 Γ--訂 線( (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 461009 A7 五、發明說明（ 一連串同心圓、部份區塊、或其共同體。該模型能由於外 裣緣而對置於其上之晶圓提供外加之支撐，同時也能使氦 氣流均勻分佈至晶圓之所有區域。例如，若晶圓置於_傳 統支撐表面上’晶圓就會阻擋一或多個氦氣阜。但本發明 之肋狀物模型能將晶圓維持於阜之上，以避免阻擒的發 生，並改善氣流之分佈。然而，以本發明之論點觀之，晶 圓區域實體上與吸盤之支撐表面接觸之區域小於晶= 至熱轉移氣流之面積大小。 、 儘管本發明上述已對各不同實施例進行說明，但熟知 此項技術者仍能輕易根據以上實施例變造出其它之不门 實施例’但仍不脫離本發明之精神範圍。 經濟部智慧財產局員工消費合作社印製 ---Λ----„---’---^---f 裝---------- 訂---------線·^---ί ΙΪ---κι — r (請先閱讀背面之注音？事項再填寫本頁) 第15頁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）J -------- r --------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 461009 _________B7__. V. Description of the invention () The laminated structure 300 consists of layer films 118, 116 and 112 stacks are formed, and they are formed under heating (for example, to 1650C at 200 psi), so that the epoxy r group of the anti-perforation layer 116 is adhered to the dielectric layer 118 and the conductive layer 112 ° at the 3B In the figure, the conductive layer forms an electrode structure through masking and etching. The traditional copper photoresist and dry etching processes are used. In FIG. 3C, an 'adhesive layer 1 15' is added to the electrode side of the laminated structure 300, and a first dielectric layer 114 is added to the adhesive layer. Suitable adhesives include, for example, hyaluronic acid, such as those containing methyl-acrylic acid esters, polyesters, polyamides, polyurethanes, epoxy groups, silicones, and ketones. The fancy circuit 120 is formed by suppressing the circuit at a pressure of 1 70 to 220 psi, a temperature of 150 to 175 GC, and a time of 60 to 90 minutes. Appropriate pressures used to form the equipment include pressure cookers, plate presses, or pressure equalizer presses, of which the pressure cooker is the most suitable because the pressure cooker can form a uniform pressure on the fancy circuit components. A typical pressure cooker contains at least a pressure-resistant stainless steel reaction chamber having a diameter of 1 to 10 feet. A pressurized non-reactive gas stream such as carbon dioxide or nitrogen is used to pressurize the pressure cooker. Suitable pressure cookers include " BARON AUTOCLAVES " ,, AOV INDUSTRIES " and " MELCO STEEL '. Alternatively, a pressure cooker may not be used, and a plate press or a pressure equalizing press may also be used to complete the fancy circuit 120. When using a plate pressure (not shown) k, a pressure distribution plate (such as a silicone or stainless steel plate) can be placed on the electrical insulating film to evenly distribute the pressure of the platen to the fancy circuit. The use of a pressure equalizing press is to place the filigree circuit in an appropriately balanced mold belt, and use a pressure equalizing press to apply sufficient pressure to the belt. After the filigree circuit 120 is formed, the circuit 120 is stacked on the table 101. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ---: ---- Bu- Iriok -------- Order --------- line, (Please read Note 2 on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives 4 61009 s A7 --------... B7_____. 5. Description of the invention () Above the surface. For example, in Figure 3D, the second adhesive layer ιΐ5 is added to the surface 101; and in Figure 3E, the filigree circuit 120 is subjected to a pressure of about 2000 psi and at a temperature of 1630C. Press to the table from 101. The second adhesive layer is the same as the first adhesive layer. It takes 60 minutes for the flower circuit 120 to be pressed to the surface of the base table until the second adhesive layer 115 is set. Because the anti-penetration layer 1 16 has been cured, it will not flow in the pressure and heat of the lamination process, but the anti-penetration layer U6 itself is still flexible, so its surface will follow the engraved surface on the seat surface 101. Change, so that the fancy circuit can be stacked on the surface of the table due to, for example, a pressure cooker, a plate press, or a pressure equalizing press. The result is that the pattern on the wafer support surface 107 will cause additional support to the clamped wafer 11 in particular. More specifically, the wafer u 丨 (Figure 2) is supported at the outer diameter edge contact, at 103 and at least another point inward (ie, ribs 106 and 11), and the formed contour The workpiece support surface 107 is immediately adjacent (ie, not cut into channels or dents). In order to achieve the cooling effect of the wafer during the process, a heat transfer gas stream (preferably helium) must be added through the heat transfer unit]. 8 is drawn into the space between the back and the wafer support surface 107 109. Due to the presence of ribs 106 and u0, the controlled gap between the wafer and the wafer support surface 107 can be eliminated, so the area of the wafer surface area exposed to the heat transfer airflow is greatly increased. This makes the air pressure distribution more uniform and larger in area than conventional techniques. Therefore, the heat transferred from the wafer to the pedestal is more uniform. The improved pattern can reduce the non-uniformity of the crystal circle temperature to about 50 ° C. An island-shaped distribution model can also be formed on the wafer support surface 107, such as the first page of this paper. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- 11 Γ I ^ ^ i 11 Γ--Order line ((Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 461009 A7 V. Description of the invention (a series of concentric circles, some blocks, or their community. The The model can provide additional support for the wafer placed on it due to the outer edge, and it can also distribute the helium gas uniformly to all areas of the wafer. For example, if the wafer is placed on a traditional support surface, the wafer One or more helium fus will be blocked. However, the rib model of the present invention can maintain the wafer on the fu to avoid the occurrence of trapping and improve the distribution of the airflow. However, in view of the argument of the present invention, In other words, the area where the wafer area physically contacts the support surface of the chuck is smaller than the area of the crystal = to the heat transfer airflow. Although the present invention has been described in various embodiments, those skilled in the art can still easily follow The above embodiments Varying other non-existent embodiments', but still does not depart from the spirit scope of the present invention. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs --- Λ ---- „---'--- ^ --- f Install ---------- Order --------- line · ^ --- ί ΙΪ --- κι — r (Please read the note on the back? Matters before filling out this page) Page 15 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)