KR101559947B1 - Electrostatic chuck, and method for manufacturing the chuck - Google Patents

Electrostatic chuck, and method for manufacturing the chuck Download PDF

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KR101559947B1
KR101559947B1 KR1020117009769A KR20117009769A KR101559947B1 KR 101559947 B1 KR101559947 B1 KR 101559947B1 KR 1020117009769 A KR1020117009769 A KR 1020117009769A KR 20117009769 A KR20117009769 A KR 20117009769A KR 101559947 B1 KR101559947 B1 KR 101559947B1
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substrate
convex portion
elastic
rubber
electrostatic chuck
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KR1020117009769A
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KR20110084888A (en
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요시아키 타츠미
타카히토 후지타
야스유키 템마
히로시 후지사와
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가부시키가이샤 크리에이티브 테크놀러지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Engineering (AREA)

Abstract

An electrostatic chuck capable of reducing the adhesion of contaminants to a substrate from a substrate adsorption surface and capable of efficiently cooling through an electrostatic chuck while maintaining an optimal contact area of the substrate.
An electrostatic chuck for adsorbing and holding a substrate through the elastic adsorption layer, wherein the elastic adsorption layer having a plurality of convex portions made of an elastic material is a substrate adsorption surface, The number of convex portions per unit area on the substrate adsorption surface is n (number / m 2 ), the area of the top surface in the convex portion is A (m 2 ), and the elasticity modulus of the elastic material forming the convex portion is E (Pa) (M) in which the convex portion shrinks in the direction in which the attraction force F is applied when the substrate having the overall flatness W h (m) is adsorbed and held by the attraction force F (Pa) satisfies the following relational expression (1) , And the ratio ξ of the total area of the top surface of the convex portion per unit area on the substrate adsorption surface is 10% or more.
5W h ??? 0.5W h ,? = (H / nA) 占 (F / E) ... (One)

Description

ELECTROSTATIC CHUCK AND METHOD FOR MANUFACTURING THE CHUCK

The present invention relates to a method for manufacturing a liquid crystal display panel, which is provided in a substrate framing device or an ion doping device used for manufacturing a liquid crystal panel to adsorb and hold a glass substrate or to perform etching treatment, chemical vapor deposition , An electron beam exposure apparatus, an ion depicting apparatus, an ion implanting apparatus, and the like, and is used for adsorbing and holding semiconductor wafers.

The electrostatic chuck has a function of electrostatically adsorbing and holding a silicon wafer or a glass substrate in a process chamber such as various semiconductor manufacturing apparatuses and liquid crystal panel manufacturing apparatuses as described above. In this electrostatic chuck, since the substrate is held in contact with the substrate, contaminants such as particles adhering to the substrate adsorption surface of the electrostatic chuck adhere to the semiconductor wafer or the glass substrate, which may cause problems in the semiconductor manufacturing process in the subsequent process . The contamination adhered to the substrate or the like remarkably lowers the yield of a semiconductor device or the like which is a final product or causes a secondary contamination of a manufacturing apparatus used in each step or contamination of a device in the entire line of the plant may occur . Therefore, one of the countermeasures against the problem of adhesion of contaminants lies in managing particles on the backside of wafers, glass substrates, and the like.

An international organization for the manufacture of semiconductor devices called International Technology Roadmap For Semiconductors (hereinafter referred to as ITRS) has created a target guideline for particles on the backside of wafers, which is a cause of contamination as described above, (Http://www.itrs.net/). In the 2007 edition of the ITRS, the particle guidance on the back surface of the wafer is 200 mm in diameter with a diameter of Φ300 mm by 2012 for devices other than the front end process exposure apparatus and measurement apparatus, ie, ion implantation apparatus. Therefore, in the electrostatic chuck, it is necessary to avoid as much as possible that these particles move and adhere to the back surface of the wafer to be adsorbed and held.

One solution to the above problem in the electrostatic chuck is to reduce the contact area between the substrate adsorption surface and the back surface of the glass substrate as much as possible. Particularly, the effect of this point is remarkable when the substrate adsorption surface is made of ceramic. That is, the ceramic is basically porous, and minute ceramic particles or the like remaining in the manufacturing process are trapped inside. Therefore, in the process of adsorbing and holding substrates such as semiconductor wafers or glass substrates with the electrostatic chuck, there is a high possibility that they are precipitated on the substrate adsorption face. Thus, for example, as disclosed in Japanese Patent Application Laid-Open No. 2006-49357, in order to reduce the contact area between the substrate attracting surface and the back surface of the substrate, the substrate attracting surface of the electrostatic chuck is made to have an embossed structure, A plurality of convex portions called pins are formed and only a flat top surface of the convex portions is brought into contact with the substrate to be attracted. Japanese Unexamined Patent Application Publication No. 2006-237023 discloses that the contact area between the pin of the ceramic forming the substrate attracting surface and the substrate is 10% or less of the area of the substrate and the average height of the pin is 5 탆 or more and 30 탆 or less And the standard deviation of the height of the fins is set to 1.8 占 퐉 or less.

However, all of these technologies form a substrate attracting surface with a material having a comparatively hardness such as ceramics. In an electrostatic chuck having a substrate attracting surface made of an elastic material such as rubber or resin, even if a convex portion is formed along these, The convex portion shrinks due to the force when a substrate such as a semiconductor wafer or a glass substrate is attracted to the electrostatic chuck, so that the contact area with the substrate may not be reduced as expected. There is also a possibility that even if an attempt is made to cool the adsorbed and held substrate through an electrostatic chuck having a cooling means such as a flow path for flowing a refrigerant, the effect may not be sufficiently obtained.

Japanese Patent Laid-Open Publication No. 2001-60618 discloses a method of attaching an absorbent member made of synthetic rubber to a convex portion formed on a substrate adsorption surface. In order to eliminate the shift of the focus by the exposure apparatus, The present invention relates to a technique for locally absorbing the roughness of the back surface of a substrate having a substrate and absorbing the absorbed and held substrate to maintain the flatness of the substrate (see paragraph 0036, paragraph 0049, etc.) And the contact area of the contact surface. Japanese Unexamined Patent Application Publication No. 10-335439 discloses an electrostatic chuck having a substrate suction surface made of silicone rubber having a shape of fine wrinkles (concavo-convex shape) and having a contact area with the wafer of 20 to 90% And the hardness (JIS-A) of the silicone rubber is not more than 85 (see paragraphs 0008 and 0009), this document does not consider the state where the substrate is adsorbed and held.

Japanese Patent Application Laid-Open No. 2006-49357 Japanese Patent Application Laid-Open No. 2006-237023 Japanese Patent Application Laid-Open No. 2001-60618 Japanese Patent Application Laid-Open No. 10-335439

Under such circumstances, the inventors of the present invention have found that, in an electrostatic chuck having a substrate attracting surface made of an elastic material such as rubber or resin, contaminants such as particles adhering to the substrate can be reduced as much as possible, As a result of intensive studies on the means for most effectively expressing the cooling effect on the held substrate, it has been found out that those problems can be solved at the same time by optimizing the convex shape and the like in the state in which the attraction force is applied, Respectively.

It is therefore an object of the present invention to provide an electrostatic chuck capable of reducing the adhesion of contaminants to the substrate from the substrate adsorption surface and efficiently cooling the electrostatic chuck while maintaining the contact area of the substrate at an optimal level .

That is, the present invention provides a method of manufacturing an electrostatic chuck for adsorbing and holding a substrate through the elastic adsorption layer, the elastic adsorption layer having a plurality of convex portions made of an elastic material as a substrate adsorption surface,

The height of the convex portion in the elastic adsorption layer is h, the number of convex portions per unit area on the substrate attracting surface is n, the area of the top surface in the convex portion is A, and the elasticity of the elastic material forming the convex portion is E, While the elastic adsorption layer is formed so that the amount? At which the convex portion shrinks in the direction in which the adsorption force F acts satisfies the following relational expression (1) when adsorbing and holding the substrate having the flatness W h with the adsorption force F, And a ratio ξ of a total area of a top surface of the convex portion per unit area in a plane is 10% or more.

5W h ??? 0.5W h , where? = (H / nA) 占 (F / E) ... (One)

[Note that the unit of each value is indicated in parentheses; (M), h (m), h (m), n (number / m 2 ), A (m 2 ), E (Pa), F (Pa)

delete

In the electrostatic chuck of the present invention, the amount 隆 at which the convex portion shrinks in the direction in which the attraction force F acts is 0.5 times or more of the overall flatness W h of the substrate while the substrate is attracted and held by the attraction force F, W h or less, preferably, the relationship between? And W h satisfies the following relational expression (2).

2W h ≥ δ ≥ 1W h , where δ = (h / nA) · (F / E) ... (2)

[The unit of each value is the same as the relation (1).]

If the amount delta of the convex portion shrinking in the direction in which the attraction force F acts is smaller than 0.5 times the overall flatness W h of the substrate to be adsorbed, the probability of contact with the back surface of the substrate on which the top surface of the convex portion is disposed is reduced, If it is larger than 5 times, the necessary attraction force becomes too high, which is not realistic. When the shrinkage amount? Satisfies the relational expression (2), it is possible to expect that the top surfaces of all convex portions come into contact with the entire surface of the substrate, and the cooling ability of the substrate by the electrostatic chuck is not lowered.

In the present invention, when the substrate is adsorbed and held in the elastic adsorption layer, the contact state of the convex portion provided with the elastic adsorption layer and the substrate is optimized. Here, the contact state at the time of adsorption refers to the ratio at which the back surface of the substrate adsorbed and held on the electrostatic chuck contacts the top surface of the convex portion. When the convex portion is formed of a soft elastic material, the convex portion shrinks according to the attraction force. Therefore, it is considered that the contact is made in a larger area by selecting the appropriate dimensions and arrangement of the convex portions. Optimization of the contact state refers to the relationship between the force of attraction and the softness (that is, the modulus of elasticity) of the material forming the convex portion, the height of the convex portion, the area of the top surface of the convex portion, and the above-mentioned contact area.

The height h of the convex portion in the elastic adsorption layer is preferably 1 m or more and 1000 m or less. If the height h of the convex portion is less than 1 占 퐉, as described later, there is a fear that the function as the convex portion may not be fulfilled because the ordinary silicon wafer used for semiconductor fabrication has a smaller value than the bending or warping, If the height h of the portion is larger than 1000 占 퐉, the heat resistance in the elastic adsorption layer becomes too large and cooling of the substrate may become insufficient.

The elastic modulus E of the elastic material forming the convex portion is preferably in the range of 0.1 MPa or more and 50 MPa or less. The modulus of elasticity of a so-called general rubber (herein referred to as Young's modulus) is about 1 MPa, and in a resin such as polyimide, it is about 3 GPa higher than rubber by about 1 GPa. Therefore, in the case of a relatively hard resin such as polyimide, the shrinkage amount? (M) of the convex portion may become too small. In the present invention, in order to satisfy the elastic modulus E as described above, .

Specific examples of the elastic material for forming the convex portion include silicone rubber, acrylic rubber, nitrile rubber, isoprene rubber, urethane rubber, ethylene propylene rubber, epichlorohydrin rubber, chloroprene rubber, styrene butadiene rubber, butadiene rubber, And butyl rubber. Among them, a silicone rubber including a material such as a silicon wafer generally used is preferable in order to minimize the influence of contamination on the substrate adsorbed and held on the electrostatic chuck. Also chemically stable fluorocarbon rubber is preferred.

The specific planar shape of the convex portion in the elastic adsorption layer is not particularly limited and may be, for example, circular or elliptical, and may be a polygonal shape of triangular or more. It is preferable that the maximum dimension of the planar shape of the convex portion is one-tenth or less, or one-fifth or more, of the maximum dimension of the substrate adsorption face. It is more preferable that the maximum size of the substrate adsorption face is one hundredth or more, or one-tenth or less. For example, in the case of adsorbing and holding a wafer having a diameter of 300 mm, it is preferable that the top surface of the convex portion has a circular shape with a diameter of 3 mm or more and 30 mm or less when the convex portion has a circular shape. When the maximum dimension of the planar shape of the convex portion is less than one-fifth of the maximum dimension of the substrate attracting surface, particularly when the modulus of elasticity of the material forming the convex portion is small, the machining becomes difficult and the shape processing of the convex portion is assured . In addition, if the planar shape of the convex portion is larger than one tenth of the maximum dimension of the substrate attracting surface, as a result, the interval between adjacent convex portions becomes excessively large and the substrate is not sufficiently cooled in the gap portion between the convex portions, There is a concern that the cooling may not be uniform.

The product A of the area A of the top surface in the convex portion and the number n of convex portions per unit area on the substrate adsorption surface is the theoretical total contact area nA (m 2 ). In the present invention, depending on the type of the substrate to be adsorbed and held, the total area nA (m 2 ) can be used as an index to form the convex portion in the elastic adsorption layer. From the viewpoint of effectively cooling the substrate, (That is, the ratio of the total area of the top surface of the convex portion with respect to the substrate adsorption surface) of the total area of the tops of the convex portions per unit area in the surface is at least 10%, preferably at least 15%, more preferably at least 20 To 50%. The right bracket (F / E) of this equation is the ratio of the attraction force F of the electrostatic chuck to the elastic modulus E of the resin material of the convex portion. The adsorption force F represents the adsorption force per unit area on the substrate adsorption surface. Generally, in the case of an ordinary electrostatic chuck, F is a value smaller than two digits in comparison with E, and is, for example, In the elastic body, E = 1 MPa and F / E = 4.9 × 10 -3 . On the other hand, (h / nA) in the left parenthesis indicates the ratio of the nA of the convex portion to the height of the convex portion, that is, the ratio of the total contact area. Therefore, an appropriate h / nA (h / nA) acceptable in manufacturing is selected for the assumed attraction force F and the modulus of elasticity E of the material of the convex portion, and finally designed to satisfy the relational expression 5W h ≥ δ ≥ 0.5W h .

For the elastic adsorption layer having a plurality of convex portions, the convex portion made of an elastic material may be formed on a substrate made of another material, or the convex portion and the substrate may be integrally formed and made of an elastic material. The concrete means for forming the predetermined convex portion is not particularly limited, and for example, the following methods can be exemplified. That is, convex portions having a predetermined planar shape and height h (depth) can be formed by performing blast treatment or the like on a sheet material made of an elastic material through a mask or the like. And an electrostatic chuck sheet including an elastic layer made of an elastic material, an upper insulating layer, an electrode layer forming an inner electrode, and a lower insulating layer is accommodated in a vacuum chuck device, and a predetermined pattern mask A convex portion corresponding to the pattern mask may be formed.

Further, a pear-skin finish pattern may be formed on the top surface of the convex portion in the elastic adsorption layer. The top surface of the convex portion can be brought into contact with more detailed local irregularities that can not be expressed by the overall flatness W h of the back surface of the substrate. As for the size of the fine concave-convex pattern, it is preferable that the size and height of the protruding portion are each in the range of 1 nm to 100 nm.

The substrate on which the electrostatic chuck is attracted and held by the electrostatic chuck according to the present invention is usually a glass substrate used for manufacturing a liquid crystal panel or a silicon wafer used in a semiconductor device manufacturing process, do. At present, it is known that a silicon wafer having a diameter of 300 mm and a thickness of 0.8 mm, which is generally used, has a bow or warp on the order of about 10 mu m on average. Recently, a "Global Back-Surface-Referenced Ideal Plane Range" (GBIR) when a wafer is fixed by suction is used in place of the "Thickness Unevenness" TTV (Total Thickness Variation) , This "overall flatness" is about 1 micron. Therefore, the overall flatness W h of the substrate to be subjected to the electrostatic chuck of the present invention can be set in the range of 0.1 탆 to 10 탆.

In the present invention, as described above, the elasticity modulus (elastic modulus) of the elastic adsorption layer is set such that the shrinkage amount (compression distance) of the convex portion when the substrate is adsorbed and held by the electrostatic chuck is 0.5 times or more the overall flatness W h of the substrate , Shape, and arrangement thereof. At this time, regarding the adsorption force F for adsorbing and holding the substrate, in consideration of the adsorption force required for adsorption of at least the silicon wafer or the glass substrate which is mainly used at present, the present invention considers the case where the adsorption force F is adsorbed and held at 100 Pa or more .

The electrostatic chuck in the present invention is not particularly limited as long as it can adsorb and hold the substrate through the elastic adsorption layer with the elastic adsorption layer having a plurality of convex portions made of an elastic material as the substrate adsorption face, And an electrostatic chucking sheet having a so-called laminated structure with so-called internal electrodes, such as a known electrostatic chuck, may be adhered to a metal base having a flow path for flowing a cooling medium. An elastic adsorption layer may be provided on the upper insulating layer (substrate adsorption surface side insulating layer) forming the electrostatic chuck sheet so that the elastic adsorption layer becomes the substrate adsorption surface when a voltage is applied to the internal electrode, The elastic adsorption layer may also serve as the upper insulating layer. Also, the bipolar electrostatic chuck having a positive electrode and a negative electrode as internal electrodes may be of a single-pole type in which only a positive electrode is provided as an internal electrode and a negative (positive) electrode is grounded. The material of the upper insulating layer, the material of the lower insulating layer (metal-based insulating layer), etc., and the material and shape of the internal electrode are not particularly limited either.

According to the present invention, since these substrates can be uniformly adsorbed and held on the substrate adsorption surface through the convex portion of the elastic adsorption layer while absorbing the warp and bending that the semiconductor wafer or the glass substrate inevitably contains, The contamination of the substrate can be reduced as much as possible from the substrate attracting surface to the back surface of the substrate and at the same time the heat of the substrate reserved during the process can be transmitted to the electrostatic chuck as much as possible to efficiently cool the substrate through the electrostatic chuck do.

Fig. 1 is an explanatory view showing the electrostatic chuck of the present invention, Fig. 2 (a) is a plan view schematically showing the shape of the convex portion in the elastic adsorption layer, and Fig. 2 (b) is a schematic cross-sectional view showing the shape of the electrostatic chuck viewed in the AA sectional direction.
Fig. 2 is an explanatory view showing an electrostatic chuck according to Embodiment 1 of the present invention, wherein (a) is a schematic plan view seen from the elastic adsorption layer, and Fig. 2 (b) is a schematic cross-sectional view showing the shape of the electrostatic chuck viewed from the BB sectional direction.
3 is a schematic cross-sectional view of an electrostatic chuck according to a second embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings.

Table 1 shows a case of a silicone rubber having a modulus of elasticity of 1 MPa (Examples 1 to 3), which is considered to be relatively soft among rubber, and a polyimide having a modulus of elasticity of 1 GPa , 5), and elasticity of 10 MPa, which is considered to be comparatively hard in rubber, respectively. 1 (a) is a plan explanatory view showing the arrangement relationship of the convex portions in this Table 1. FIG. 1 (a), the convex portion 1 having a diameter d (m) is arranged at each apex of a regular triangle having a length of a (m) on one side, and one of the convex portions 1 The convex portion 1h, the convex portion 1d, the convex portion 1f and the convex portion 1e from the convex portion 1b in the clockwise direction about the concave portion 1c, Respectively. These convex portions 1 are part of the electrostatic chuck 100 and are arranged in such a relationship that the convex portions 1 are distributed on the front surface so as to form the substrate attracting surface of the electrostatic chuck 100 do. Fig. 1 (b) shows the shape of the electrostatic chuck 100 viewed from the direction of the A-A cross section in Fig. 1 (a). The electrostatic chuck 100 has a base (metal base) 5 made of, for example, aluminum metal, a lower insulating layer 3 and an elastic adsorption layer 2 laminated thereon, (Internal electrode) 4 as shown in Fig. The elastic absorbent layer 2 also serves as an upper insulating layer for electrically insulating the upper surface side of the adsorption electrode 4. The elastic absorbent layer 2 has a convex portion 1 having a height h (m) And supports the substrate 6 to form a substrate adsorption surface. And the upper surface 2b which is not in contact with the substrate 6 is provided between adjacent convex portions 1 in the elastic absorbent layer 2. [

In these examples, the elastic adsorption layer 2 was formed with a substrate attracting surface of 298 mm in diameter, and a silicon semiconductor substrate with a diameter of 300 mm and an overall flatness W h of 1 μm was subjected to adsorption force F = 4900 Pa (? 50 gf / cm 2 ) (H / nA) 占 (F (n) / 2) where the diameter d of the relatively large convex portion is 21 mm, the height h thereof is relatively high (60 m), and the shrinkage amount of the convex portion 1 is? / E) = 1.02 占0-6 (m), a value equivalent to the overall flatness W h (m) of the silicon semiconductor substrate can be obtained, and the total area of the top surface of the convex portion per unit area on the substrate adsorption surface Is 28.7 (%), the cooling of the substrate can be performed very satisfactorily. In Example 2, the height h of the convex portion is lower and the diameter d is smaller than that in Example 1, but the shrinkage amount? = 1.01 占 퐉, which is equivalent to Example 1, is obtained by narrowing the interval a of the convex portion 1, And is half of Example 1, it is expected that the cooling ability of the substrate is lower than that of Example 1. [ In Example 3, the diameter d of the convex portion is the same as Example 2, and the height a is made smaller, while the height a is made smaller, and the delta is almost half of Example 2. However, do. On the other hand, Example 4 is a case where the convex portion is made of polyimide, and the height h, the diameter d and the distance a of the convex portion are the same as in Example 1, but the value is very small as about 0.001 탆 . Therefore, the flexibility of the convex portion can hardly be expected. In Example 5, the material of the convex portion is the same as in Example 4, and a relatively large value of? Is obtained, but? Is extremely lowered to 0.1 (%) and heat conduction due to contact with the substrate can not be expected. In Example 6, the dimensions and arrangement of convex portions are optimized to obtain 隆 = 0.532 탆, but ξ is 6.4 (%).

Figure 112014052605423-pct00006

<Examples>

Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

[Example 1]

A thin silicon sheet having a thickness of 100 mu m and a size of 300 mm x 300 mm (a single-sided micro-concave-convex type of micro-silicone sheet manufactured by Sanshin Enterprise Co., Ltd., model number NμKSA-100-50) was prepared, cut into a circle having a diameter of 298 mm, Was used as the elastic absorbent layer (2). Further, a copper clad laminate (copper clad laminate "Uff Cell (registered trademark) N ", product of Ube Kosan Co., Ltd.) having a thickness of 9 占 퐉 laminated on one side of a polyimide sheet having a thickness of 50 占 퐉 was used to mask (Electrode interval: 2 mm) having a half-moon pattern (semi-circular shape with a diameter of 294 mm) as a corrosive etchant was formed, and a polyimide sheet having a diameter of 298 mm was used as the lower insulating layer 3. Then, as shown in Fig. 2, the copper foil surface side of the copper clad laminate was bonded through a 10 mu m-thick epoxy-based bonding sheet (not shown) so that the fine copper surface of the silicon sheet was observed. The integrally seated sheet was adhered to the aluminum base 5 having a thickness of 15 mm and a diameter of 298 mm through the above epoxy bonding sheet with the cooling water channel 7 having a diameter of 6 mm inside, The surface of the substrate was the surface to be adsorbed.

Subsequently, a predetermined top surface 2b was obtained by uniformly irradiating silicon grains having a particle diameter of several micrometers in a pneumatic blast through a predetermined mask made of stainless steel to the fine iridium surface of the microsilicon sheet for a predetermined period of time. That is, as shown in Example 1 of Table 1, a convex portion 1 having a height h = 60 탆, a diameter d = 21 mm, an interval a = 37.3 mm between adjacent convex portions and a top convex surface was formed, An elastic adsorption layer 2 having n = 830 convex portions 1 per 1 m 2 of unit area was obtained on the substrate adsorption face. In order to connect the adsorption electrode 4 to the external power source 10, the potential supply line 9 is taken out from the adsorption electrode 4 through the insulating sleeve 8 to the outside of the electrostatic chuck 101 ).

In order to confirm to what extent the convex portion 1 of the elastic adsorption layer 2 contacts when the electrostatic chuck 101 obtained above adsorbs and holds the substrate 6 at the adsorption force F of 4900 Pa, The same test was carried out. A transparent Pyrex (registered trademark) glass plate having a diameter of 300 mm, a thickness of 10 mm and a total flatness W h of 1 μm was placed on the substrate adsorption surface composed of the top surface of the convex portion 1 and pressed by a press machine having a flat pedestal Respectively. At this time, the weight of the glass plate was controlled so that the total pressure per unit area was 4900 Pa. First, when the contact state of the convex portion 1 was confirmed by visual observation through a transparent Pyrex (registered trademark) glass plate under pressure, all the convex portions 1 were in contact with each other at the top surface thereof . Incidentally, since the shapes of the light interference patterns are different from each other when the convex portions 1 are in contact with the glass plate and the case where the convex portions 1 are not in contact with each other, both states can be discriminated by visual observation. As another test method, when a pressure sensitive paper is sandwiched between the glass plate and the substrate adsorption face of the electrostatic chuck 101 and pressed by a pressing machine in the same manner as described above, the pressure sensitive paper is reacted at all the convex portions 1 , It was confirmed that all convex portions 1 were in contact with each other at the top surface thereof. As a comparative experiment, the same experiment was carried out under the conditions of a total of 2450 Pa per unit area, in which the sum of the self weight of the glass plate and the applied pressure was halved. Two-thirds of all the convex portions 1 were placed on the glass plate . &Lt; / RTI &gt;

[Example 2]

A polyimide sheet having a thickness of 25 占 퐉 was coated with a composite sheet 11 on which a silicon sheet having a thickness of 100 占 퐉, the surface of which was treated with fine irregularities, an acrylic epoxy bonding sheet 12 having a thickness of 13 占 퐉, (Product of Furukawa Circuit Foil Co., Ltd.) were each cut into a circle having a diameter of 298 mm, and laminated by press molding under the conditions of 3 MPa and 170 캜.

In order to make the copper foil on the one surface side of the laminated press body to be a bipolar electrode, the electrode having a fan shape (adjacent electrode distance of 3 mm), which is divided into 10 parts and divided into 10 parts, . Then, a polyimide sheet 14 (having a thickness of 50 mu m) (made by Toray DuPont Co., Ltd.) was formed so as to cover the electrode surface obtained by the above etching through the above-mentioned acrylic epoxy bonding sheet 12 having a thickness of 13 mu m, Kapton film type 200H) were stacked and pressed together under the above-described conditions to laminate them integrally.

Then, a 55 m thick capton single-sided adhesive tape (Okamoto Kogyo Co., Ltd. 1030E) was adhered to the entire surface of the obverse surface of the laminate obtained above, and further, the surface of the polyimide sheet 14 The electrode surface was placed on the hot plate in the upward direction, and the terminals made of copper (copper) were soldered while heating.

Subsequently, a plurality of holes were drilled through the same capton single-sided adhesive tape as used in the above so that the center of the opening having a diameter of 23 mm was located at each apex of a regular triangle having a length of 35 mm on one side, and the pattern mask was placed on an alumina porous vacuum chuck The adhesive tape side of the laminate thus obtained was placed on the pattern mask so as to face each other, and vacuum suction was carried out so as to be 1 Pa. As a result, unevenness corresponding to the hole diameter and thickness of the pattern mask is formed, and after the capton single-sided adhesive tape is finally peeled off as described later, the silicon sheet having the not- A convex portion as shown is formed.

A silicone adhesive 15 (MOXIVE PERFORMANCE MATERIALS Japan Co., Ltd., type TSE3331) was laminated on the polyimide sheet surface on the side to which the copper terminal was attached, with the thickness being 150 mu m , The base 16 made of aluminum having a plate thickness of 16 mm and a diameter of 298 mm and having a water channel of cooling water was placed thereon, the power of the pump sucking the vacuum chuck was turned off, And then the whole was heated to 140 DEG C on a hot plate to cure the silicone adhesive for several hours. Thereafter, the unified one was removed from the vacuum chuck and cleaned, and the capton single-sided adhesive tape covering the silicon sheet having the convex surface was peeled off, whereby the electrostatic charge according to Example 2 having the convex portion 1 as shown in Fig. Chuck (No.1) was completed.

As a modified example of the electrostatic chuck obtained in this example, the electrostatic chuck (No. 2) according to the embodiment of the present invention was obtained in the same manner as above except that the convex portion in Example 3 shown in Table 1 was formed .

Figure 112011031896328-pct00002

The thus obtained electrostatic chucks No. 1 and No. 2 were mounted on an ion implantation apparatus, respectively, while a silicon wafer having a diameter of 300 mm was attracted and held at a supply voltage of ± 750 V and an average ion beam power of 450 W , And the dose was 1 x 10 15 ions / cm 2 . At this time, cooling water was allowed to pass through the aluminum-based water channel under the condition of 2 L / min. The temperature of the surface of the wafer at the time of ion implantation was measured with a thermo-label. When the wafer was adsorbed and held by the electrostatic chuck No. 1, the temperature rise could be suppressed to less than 48 캜. The temperature rise could be suppressed to less than 89 캜. Further, in the test using the electrostatic chuck No. 1, even when the ion beam power was increased to 600 W, the result that the temperature rise was less than 60 占 폚 was obtained at the above-mentioned injection amount. This is comparable to a conventional electrostatic chuck accompanied by gas cooling.

1: convex portion 2: elastic adsorption layer
2b: upper surface other than the convex portion of the elastic adsorption layer 3: lower insulating layer
4: Adsorption electrode 5: Base
6: substrate 7: water channel
8: Insulation sleeve 9: Dislocation line
10: power supply 11: composite sheet
12: bonding sheet 13: electrolytic copper foil
14: polyimide sheet 15: silicone adhesive
16: base 100, 101: electrostatic chuck

Claims (7)

There is provided a method of manufacturing an electrostatic chuck for adsorbing and holding a substrate through the elastic adsorption layer with an elastic adsorption layer having a plurality of convex portions made of an elastic material as a substrate adsorption surface,
The height of the convex portion in the elastic adsorption layer is h, the number of convex portions per unit area on the substrate attracting surface is n, the area of the top surface in the convex portion is A, and the elasticity of the elastic material forming the convex portion is E, While the elastic adsorption layer is formed so that the amount? At which the convex portion shrinks in the direction in which the adsorption force F acts satisfies the following relational expression (1) when adsorbing and holding the substrate having the flatness W h with the adsorption force F, Wherein the ratio ξ of the total area of the tops of the convex portions per unit area in the plane is 10% or more.
5W h ??? 0.5W h , where? = (H / nA) 占 (F / E) ... (One)
[Note that the unit of each value is indicated in parentheses; (M), h (m), h (m), n (number / m 2 ), A (m 2 ), E (Pa), F (Pa) The method according to claim 1,
Wherein the height of the convex portion is in the range of 1 占 퐉 to 1000 占 퐉. The method according to claim 1,
Wherein the elastic modulus E of the elastic material forming the convex portion is in the range of 0.1 MPa or more and 50 MPa or less. The method according to claim 1,
The elastic material for forming the convex portion may be at least one selected from the group consisting of silicone rubber, acrylic rubber, nitrile rubber, isoprene rubber, urethane rubber, ethylene propylene rubber, epichlorohydrin rubber, chloroprene rubber, styrene butadiene rubber, butadiene rubber, Gt; and / or &lt; / RTI &gt; The method according to claim 1,
Wherein the top surface of the convex portion has a pear-skin finish pattern. The method according to claim 1,
Wherein the overall flatness W h of the substrate is in the range of 0.1 탆 to 10 탆. 7. The method according to any one of claims 1 to 6,
An electrostatic chucking sheet comprising an elastic adsorption layer made of an elastic material, an upper insulating layer, an electrode layer forming an inner electrode, and a lower insulating layer is accommodated in a vacuum chuck device, and a predetermined pattern Wherein a convex portion corresponding to the pattern mask is formed by vacuum suction through a mask to obtain an elastic adsorption layer.
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