CN102187446B - Electrostatic chuck, and method for manufacturing the chuck - Google Patents
Electrostatic chuck, and method for manufacturing the chuck Download PDFInfo
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- CN102187446B CN102187446B CN200980141296.6A CN200980141296A CN102187446B CN 102187446 B CN102187446 B CN 102187446B CN 200980141296 A CN200980141296 A CN 200980141296A CN 102187446 B CN102187446 B CN 102187446B
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- electrostatic chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
Abstract
Provided is an electrostatic chuck, which can reduce the adhesion of contaminants from a substrate adsorption face to a substrate, to thereby perform cooling via the electrostatic chuck while keeping the substrate contact area optimum. In the electrostatic chuck, an elastic adsorption layer having a plurality of raised portions of an elastic material is made into the substrate adsorption face so that the substrate is adsorbed and held via the elastic adsorption layer. The raised portions on the elastic adsorption layer have a height h(m); the number of the raised portions per unit area on the substrate adsorption face is n(pieces/m2); the top faces of the raised portions have an area A(m2); and the elastic material forming the raised portions has a modulus of elasticity E(Pa). When the substrate having an overall flatness Wh(m) is adsorbed and held by an adsorption force F(Pa), the quantity d(m), in which the raised portions shrink in the acting direction of the adsorption force F, satisfies the following relation (1), and the ratio of the total area of the raised portion top faces per the unit area of the substrate adsorption face is 10 % or more: 5Wh = d = 0.5Wh, and d = (h/nA)(F/E)... (1).
Description
Technical field
The present invention relates to a kind of electrostatic chuck, be used for following purposes: in the employed substrate layer pressure device of liquid crystal panel manufacturing, ion doping device etc., possess this electrostatic chuck and adsorb/keep glass substrate; Perhaps in plasma processing apparatus that the film that employed etch processes, chemical vapor deposition (CVD) by semiconductor fabrication process carry out forms etc., electron exposure device, ion describing device, ion implantation apparatus etc., possess this electrostatic chuck and adsorb/keep semiconductor wafer.
Background technology
Electrostatic chuck has in the process chamber of as described above various semiconductor-fabricating devices, liquid crystal panel manufacturing installation etc. Electrostatic Absorption, keeps the function of silicon wafer, glass substrate etc.In this electrostatic chuck, owing to keep substrate contiguously, so exist attached to the particle pollutants such as (particle) on the substrate adsorption plane of electrostatic chuck attached on semiconductor wafer, the glass substrate, and the worry that in the semiconductor fabrication process of subsequent handling, has problems.Attached to the pollutant on the substrate etc., significantly reduce rate of finished products as the semiconductor element of final products etc., also employed manufacturing installation in each operation is caused secondary pollution sometimes in addition, also may pollute the device of the production line integral body of factory.Therefore, one of countermeasure of the problem of adhering at pollutant is, the particle at the back side of management wafer, glass substrate etc.
What be known as International Technology Roadmap For Semiconductors (below be called ITRS) makes relevant international body with semiconductor element, made target benchmark, and on the homepage of internet, disclose its content (http://www.itrs.net) about the particle of the chip back surface of the essential factor that becomes pollution as described above.In the ITRS of version in 2007, stipulate: the device beyond the exposure device of front end (front end) technology, measurement mechanism, be in the ion implantation apparatus etc., till the particle guide to 2012 of chip back surface year in 300mm wafer size diameter 0.16 μ m be 200.Therefore, in electrostatic chuck, must do one's utmost to avoid this particle to move and attached to the back side of the wafer that adsorbs maintenance.
One of solution countermeasure of the problems referred to above in the electrostatic chuck is the contact area that as far as possible reduces between the back side of this substrate adsorption plane and wafer, glass substrate.Particularly, situation that to be the substrate adsorption plane be made of the material of ceramic that the effect of this point significantly manifests.That is, pottery is cellular basically, in manufacture process residual fine ceramic powder, other is trapped in the inside.Therefore, in the process of being adsorbed/keeping substrates such as semiconductor wafer, glass substrate by electrostatic chuck, these separate out the possibility height in the substrate adsorption plane gradually.Therefore, for example TOHKEMY 2006-49357 communique is described like that, for the contact area between the back side of reducing substrate adsorption plane and substrate, the substrate adsorption plane of electrostatic chuck is made as bulge-structure, promptly forms a plurality of protuberances that are known as pin (pin) on the substrate adsorption plane, and only make the smooth end face of this protuberance and substrate contacts and adsorb.In addition, in TOHKEMY 2006-237023 communique, proposed following technology: the pin and the contact area between the substrate that form the pottery of substrate adsorption plane become below 10% of substrate area, and the average height of pin is made as below the above 30 μ m of 5 μ m, in addition and the standard deviation of the height of pin be made as below the 1.8 μ m.
Yet, these technology all are the technology that is formed the substrate adsorption plane by the material that pottery etc. has a higher hardness, in the electrostatic chuck that possesses the substrate adsorption plane that constitutes by rubber, resin elastomeric material, suppose on these, to form protuberance, also because the power when the substrate that makes semiconductor wafer, glass substrate etc. is adsorbed on the electrostatic chuck, cause this protuberance to shrink, therefore can't as predetermined, reduce contact area sometimes with substrate.In addition, to cool off the worry that the substrate that adsorbs/keep also can't fully be realized its effect via the electrostatic chuck that possesses the cooling units such as stream that flow through cooling agent even exist.
In addition, in TOHKEMY 2001-60618 communique, record the absorption component of the synthetic rubber system of installing in the protuberance that is being formed on the substrate adsorption plane, but the document relates in order to eliminate the deviation of the focus that is produced by exposure device, come the roughness of the substrate back that absorptive substrate had partly and keep the technology (with reference to paragraph 0036, paragraph 0049 etc.) of the evenness of the substrate that adsorbs/keep with absorption component, with consider far apart in the technology with contact area substrate the protuberance end face.In addition, in Japanese kokai publication hei 10-335439 communique, record and possess the silicon rubber system substrate adsorption plane that formed texture (concavo-convex) apperance and become 20～90% electrostatic chuck of chip area with the contact area of wafer, the hardness (JIS-A) of enumerating silicon rubber is the situation (with reference to paragraph 0008,0009) below 85, does not consider the state of absorption/maintenance substrate in the document.
Patent documentation 1: TOHKEMY 2006-49357 communique
Patent documentation 2: TOHKEMY 2006-237023 communique
Patent documentation 3: TOHKEMY 2001-60618 communique
Patent documentation 4: Japanese kokai publication hei 10-335439 communique
Summary of the invention
(problem that invention will solve)
In view of this situation, the present inventor etc. are to reducing attached to pollutants such as the particles on the substrate in the electrostatic chuck that possesses the substrate adsorption plane that is made of rubber, resin elastomeric material as much as possible and finding most effectively the technology of the cooling effect of the substrate that adsorbs via electrostatic chuck/keep is concentrated on studies, found that by protuberance shape under the state of absorption affinity effect etc. is optimized, can address these problems simultaneously, and finish the present invention.
Thereby, the invention provides a kind of electrostatic chuck, can reduce pollutant from the substrate adsorption plane to the adhering to of substrate, can optimally keep the contact area of substrate simultaneously and carry out cooling effectively via electrostatic chuck.
(scheme that is used to deal with problems)
That is, the present invention is a kind of manufacture method of electrostatic chuck, will be made as the substrate adsorption plane by the elasticity adsorption layer that possesses a plurality of protuberances that elastomeric material constitutes, and adsorb/keep substrate via this elasticity adsorption layer, and the manufacture method of this electrostatic chuck is characterised in that,
When the height with the protuberance in the elasticity adsorption layer is made as h, the quantity of the protuberance on the unit are in the substrate adsorption plane is made as n, the area of the end face in the protuberance is made as A, the spring rate that forms the elastomeric material of protuberance is made as E, adsorbing/keep whole evenness with absorption affinity F is W
hSubstrate the time so that the mode of the relational expression (1) of the amount δ that shrinks in the direction upper convex portion of absorption affinity F effect below satisfying forms the elasticity adsorption layer, and to make the ratio ξ of the gross area of the protuberance end face on the unit are in the substrate adsorption plane be more than 10%,
5W
h〉=δ 〉=0.5W
h, at this, δ=(h/nA) (F/E) ... (1),
Wherein, unit of each value be the unit of each parantheses shown in interior: W
h(m), h (m), n are (individual/m
2), A (m
2), E (Pa), F (Pa), δ (m).
In the electrostatic chuck of the present invention, under the state with absorption affinity F absorption/maintenance substrate, the amount δ that shrinks in the direction upper convex portion of absorption affinity F effect is the evenness W of the integral body of substrate
hMore than 0.5 times and whole evenness W
hBelow 5 times, preferably δ and W
hRelation satisfy below shown in relational expression (2),
2W
h〉=δ 〉=1W
h, δ=(h/nA) (F/E) wherein ... (2).
The unit of each value is identical with relational expression (1).
When the amount δ that shrinks in the direction upper convex portion of absorption affinity F effect becomes less than the evenness W of the integral body of the substrate of absorption
h0.5 times the time, the end face of protuberance diminishes with the probability that the back side of the substrate of institute mounting contacts, when becoming greater than 5 times, required absorption affinity becomes too high and unrealistic on the contrary.Satisfy at amount of contraction δ under the situation of relational expression (2), can expect the end face contact of protuberances whole on whole of substrate, the situation as the cooling capacity based on the substrate of electrostatic chuck descends can not occur.
In the present invention, when making elasticity adsorption layer absorption/maintenance substrate, between the protuberance that the elasticity adsorption layer is possessed and the substrate to contact situation optimised.Here, the contact during absorption is meant that situation adsorbs/remain on the ratio of the back side of the substrate on the electrostatic chuck in the end face contact of protuberance.Under the situation that protuberance is formed by the elastic material of softness, protuberance utilizes absorption affinity to shrink, and therefore thinks size and configuration by selecting suitable protuberance, with more area contact.The optimization of contact situation, be meant absorption power, form pliability (being spring rate), the height of protuberance, the area of protuberance end face and the relation between the described contact area of the material of protuberance.
About the height h of the protuberance in the elasticity adsorption layer, preferably below the above 1000 μ m of 1 μ m.As the height h of protuberance during less than 1 μ m, as described later, exist the value become less than the common deflection of using in the semiconductor manufacturing that silicon wafer had, warpage can not realize worry as the function of protuberance, on the contrary, when the height h of protuberance becomes also bigger than 1000 μ m, exist thermal impedance in the elasticity adsorption layer to become excessive and cooling substrate becomes inadequate worry.
In addition, the spring rate E about the elastomeric material that forms protuberance can preferably become the scope below the above 50MPa of 0.1MPa.The spring rate (referring to Young's modulus here) of so-called general rubber is for about 1MPa, and is relative therewith, in resins such as polyimides, than about also high 3 figure places of rubber, reaches about 1GPa.Therefore, the worry that exists the amount of contraction δ (m) of protuberance in the resin harder as polyimides to become too small in order to satisfy this spring rate E, forms the elasticity adsorption layer by the rubber elastomeric material in the present invention.
About forming the elastomeric material of protuberance, specifically, can constitute by the material of at least a selection from silicon rubber, acrylic rubber, acrylonitrile-butadiene rubber, isoprene rubber, polyurethane rubber, ethylene-propylene rubber, epichlorohydrin rubber, neoprene, styrene butadiene ribber, butadiene rubber, fluorubber and butyl rubber.Wherein, in order to reduce adsorbing/remain on the pollution effect of the substrate on the electrostatic chuck as far as possible, preferably comprise the silicon rubber of the material identical with the general silicon wafer that uses.In addition, the fluorubber of also preferred chemical stabilization.
Concrete flat shape about the protuberance in the elasticity adsorption layer is not particularly limited, and is for example circular or oval, also can become the above polygonal of triangle.In addition, the full-size that flat shape had of this protuberance, hope is the maximum sized below 1/10th, more than 1/500th of substrate adsorption plane.More preferably can be the maximum sized more than 1/100th, below 1/10th of substrate adsorption plane.For example, under the situation of the wafer of absorption/maintenance diameter 300mm, if the flat shape of protuberance is made as circle, then the end face of protuberance can become the following circle of the above 30mm of diameter 3mm.When maximum sized 1/500th time less than the substrate adsorption plane of the full-size of the flat shape of protuberance, particularly under the little situation of the spring rate of the material that forms protuberance, its processing difficulty that becomes guarantees that in all the shape processing of protuberance becomes difficult.In addition, when become maximum sized 1/10th time greater than the substrate adsorption plane of the flat shape of protuberance, the interval of the protuberance that the result is adjacent becomes excessive, worries that the cooling of substrate in the gap portion between protuberance is abundant inadequately, and the cooling of substrate becomes inhomogeneous.
In addition, the product of the quantity n of the protuberance on the unit are in the area A of the end face in the protuberance and the substrate adsorption plane becomes theoretic gross contact area nA (m
2).In the present invention, can be according to the kind of the substrate of absorption/maintenance, with this gross area nA (m
2) be index, form the protuberance in the elasticity adsorption layer, from carrying out the viewpoint of substrate cooling effectively, the ratio ξ of the gross area of the protuberance end face on the unit are in the substrate adsorption plane ratio of the gross area of the protuberance end face of substrate adsorption plane (promptly with respect to) becomes more than 10%, be preferably more than 15%, more preferably 20～50% scope.In addition, when the relational expression of explanation δ=(h/nA) (F/E), the right parantheses (F/E) of this formula is the absorption affinity F of electrostatic chuck and the ratio of the spring rate E of the resin material of protuberance.Absorption affinity F represents the absorption affinity on the unit are in the substrate adsorption plane, and general under the situation of common electrostatic chuck, F is than the value more than little 2 figure places of E, for example, relative therewith for common absorption affinity=4900Pa, in the elastomer of rubber etc., E=1MPa becomes F/E=4.9 * 10
-3On the other hand, the nA of the expression of (h/nA) in left parenthesis protuberance is the ratio of gross contact area with respect to the height of protuberance.Therefore,, select to make and go up the suitable h/nA that allows, design and make and finally satisfy relational expression 5W at the absorption affinity F of supposition and the spring rate E of the material of protuberance
h〉=δ 〉=0.5W
h
About possessing the elasticity adsorption layer of a plurality of protuberances, the protuberance that is made of elastomeric material was formed on the base material that is made of other material, protuberance and base material are formed by elastomeric material integratedly.In addition, be not particularly limited about the concrete grammar that forms the protuberance of stipulating, but for example can the method for illustration as following.Promptly by the flat shape of on the sheet object that constitutes by elastomeric material, carrying out blasting treatment etc., can form having regulation and the protuberance of height h (degree of depth) via mask etc.In addition, also can be by being housed in the vacuum chuck device with crossing the electrostatic chuck sheet that possesses elastic layer, the upper insulation layer that constitutes by elastomeric material, the electrode layer that forms internal electrode and lower insulation layer, the pattern mask ground that accompanies regulation in the elastic layer side of electrostatic chuck sheet carries out vacuum attraction, forms and the corresponding protuberance of pattern mask.
In addition, also can form pears skin shape pattern at the end face of the protuberance in the elasticity adsorption layer.Be made as pears skin shape by end face with protuberance, can be along the evenness W of the integral body of using substrate back
hThe concavo-convex end face contact that makes protuberance of the thinner part that can't show.About the size of this pears skin shape pattern, the size of ledge and highly be respectively the scope of 1nm～100nm preferably.
About electrostatic chuck of the present invention adsorbed/substrate that keeps, as long as be made as employed glass substrate during for example liquid crystal panel is made, by the object by common so-called electrostatic chuck absorption/maintenance such as the employed silicon wafer of process for manufacture of semiconductor device.Current, known, there be deflection (bow), the warpage (warp) about average about 10 μ m in the silicon wafer of general diameter 300mm, the thickness 0.8mm that uses.In recent years, " whole evenness " GBIR (Global Back-Surface-Referenced Ideal Plane Range) during the absorption fixed wafer replaces " deviation of gross thickness " TTV (Total Thickness Variation) and is used, but under the situation of the silicon wafer of diameter 300mm, should " whole evenness " have an appointment about 1 μ.Therefore, become the evenness W of integral body of the substrate of object about electrostatic chuck of the present invention
h, can be made as the scope of 0.1 μ m～10 μ m.
And, in the present invention, as described above, set spring rate, shape, its configuration of elasticity adsorption layer, make with electrostatic chuck adsorb/amount of contraction (compression distance) of protuberance when keeping this substrate becomes the evenness W of the integral body of substrate
hMore than 0.5 times.At this moment,, consider the required absorption affinity of absorption of the silicon wafer, glass substrate etc. of current main use at least about the absorption affinity F of absorption/maintenance substrate, consider in the present invention absorption affinity F be 100Pa with on the situation of adsorbing/keeping.
Electrostatic chuck among the present invention, as long as the elasticity adsorption layer that possesses a plurality of protuberances that is made of elastomeric material can be made as the substrate adsorption plane and adsorb/keep substrate via this elasticity adsorption layer, then its concrete structure is not particularly limited, sticks on for the electrostatic chuck sheet adopt electrostatic chuck as is well known will have so-called internal electrode and cambium layer stack structure like that to possess such structure on the metal basal disc of the stream that flows through coolant etc.And, when when above-mentioned internal electrode applies voltage, both can on the upper insulation layer (substrate adsorption plane side insulation layer) that forms the electrostatic chuck sheet, the elasticity adsorption layer be set, perhaps also can make this elasticity adsorption layer double as upper insulation layer so that the elasticity adsorption layer becomes the substrate adsorption plane.In addition, both can be the ambipolar electrostatic chuck that has positive electrode and negative electrode as internal electrode, also can be just only to have (bearing) electrode as internal electrode and bear the one pole type on (just) utmost point side joint ground.And,, also be not particularly limited about the material of material of upper insulation layer, lower insulation layer (metal basal disc side insulation layer) etc., internal electrode, shape etc.
(invention effect)
According to the present invention, can absorb warpage that semiconductor wafer, glass substrate etc. possess inevitably, deflection and adsorb/keep these substrates equably at the substrate adsorption plane via the protuberance of elasticity adsorption layer, therefore can reduce pollutant such as particle as far as possible and transfer to the back side of substrate from the substrate adsorption plane, and the heat of the substrate of being accumulated in will handling passes to electrostatic chuck to greatest extent, can carry out the cooling via the substrate of electrostatic chuck efficiently.
Description of drawings
Fig. 1 is the key diagram that electrostatic chuck of the present invention is shown, and (a) is the schematic top plan view that the appearance of the protuberance in the elasticity adsorption layer is shown, and (b) is the generalized section that the appearance of the electrostatic chuck of seeing from the A-A profile direction is shown.
Fig. 2 is the key diagram that the electrostatic chuck relevant with embodiments of the invention 1 is shown, and (a) is the schematic top plan view of seeing from the elasticity adsorption layer, (b) is the generalized section that the appearance of the electrostatic chuck of seeing from the B-B profile direction is shown.
Fig. 3 is the generalized section that the electrostatic chuck of seeing from the side relevant with embodiments of the invention 2 is shown.
Embodiment
Below, illustrate in greater detail the present invention with reference to accompanying drawing.
In table 1, the situation (example 4,5) that constitutes at the situation (example 1～3) that is made of the silicon rubber that is considered to comparatively soft spring rate 1MPa in the rubber, by the polyimides as the representative of engineering plastics and the spring rate 1GPa that also usually uses in electrostatic chuck and by the situation that is considered to harder spring rate 10MPa in the rubber illustrates the example of the protuberance that the elasticity adsorption layer possessed respectively.In addition, Fig. 1 (a) be illustrate the protuberance in this table 1 configuration relation overlook key diagram.In this Fig. 1 (a), the protuberance 1 that diameter d (m) is shown is configured in the appearance on each summit of equilateral triangle that length on one side is a (m), with one of them protuberance 1c is the center, disposes protuberance 1g, protuberance 1h, protuberance 1d, protuberance 1f and protuberance 1e from protuberance 1b to clockwise direction.These protuberances 1 illustrate the part in the electrostatic chuck 100, have under the configuration status of this relation the substrate adsorption plane of formation electrostatic chuck 100 thereby 1 whole ground of protuberance distributes.In addition, the appearance of the electrostatic chuck 100 seen of the A-A profile direction from Fig. 1 (a) is shown in Fig. 1 (b).Electrostatic chuck 100 has the substrate (metal basal disc) 5 that is for example formed by aluminum metal, is laminated with lower insulation layer 3 and elasticity adsorption layer 2 thereon, possesses adsorption electrode (internal electrode) 4 between them.Wherein, elasticity adsorption layer 2 double as are with the upper insulation layer of the upper face side electric insulation of adsorption electrode 4, and elasticity adsorption layer 2 possesses the protuberance 1 of a plurality of height h (m), supporting substrate 6 and form the substrate adsorption plane.In addition, between the adjacent protuberance 1 in this elasticity adsorption layer 2, has the upper surface 2b that does not contact with substrate 6.
In these examples, when the substrate adsorption plane of elasticity adsorption layer 2 formation diameter 298mm, with absorption affinity F=4900Pa (≈ 50gf/cm
2) adsorb diameter 300mm, whole evenness W
hWhen being the silicon semiconductor substrate of 1 μ m, at first, in example 1, have the diameter d (21mm) of bigger protuberance, its height h also is higher (60 μ m), and the amount of contraction of protuberance 1 is (F/E)=1.02 * 10 of δ=(h/nA)
-6(m), can access evenness W with the integral body of silicon semiconductor substrate
h(m) equal value, and in addition, the ratio ξ of the gross area of the protuberance end face on the unit are in the substrate adsorption plane is 28.7 (%), therefore can carry out the cooling of substrate very well.In addition, in example 2, the height h that compares protuberance with example 1 is low, diameter d is also little, though narrow down by the interval a with protuberance 1, obtains the amount of contraction δ=1.01 μ ms equal with example 1, but because ξ=12.1%, be half of example 1, the cooling capacity of therefore envisioning substrate and example 1 be ratio mutually.In example 3, the diameter d of protuberance is identical with example 2, is reducing its height h and interval a is made as under the littler situation, and δ becomes the only about half of of example 2, but ξ compares raising about 20% with example 2.On the other hand, example 4 is the situations that the material of protuberance are made as polyimides, and a is identical with example 1 for the height h of protuberance, diameter d, interval, but δ and spring rate are inversely proportional to and diminish, and therefore becomes the minimum value about 0.001 μ m.Therefore, almost can't expect the flexibility of protuberance.In example 5, the material of protuberance is identical with example 4, though δ obtains bigger value, the extreme decline of ξ and become 0.1 (%) can't expect the heat conduction by realizing with contacting of substrate.In addition, in example 6, optimize each size, configuration of protuberance and obtain δ=0.532 μ m, but ξ rests on 6.4 (%).
[table 1]
Embodiment
Below, be described more specifically the present invention by embodiment, but the invention is not restricted to these contents.
[embodiment 1]
Prepare the film silicon chip (single face pears skin shape type, the model N μ KSA-100-50 of little silicon chip of サ Application シ Application エ Application タ one プ ラ イ ズ (SANSHIN ENTERPRISE) Co., Ltd.'s system) of thickness 100 μ m, 300mm * 300mm, be cut into the circle of diameter 298mm, be made as elasticity adsorption layer 2 as described later.In addition, use is laminated with the copper clad laminate (copper clad laminate of Ube Industries, Ltd's system " コ ピ セ Le (registered trade mark) N ") of the Copper Foil of thickness 9 μ m on the single face of the polyimide piece of thickness 50 μ m, on copper-clad surface, carry out mask, form the adsorption electrode 4 of ambipolar (electrode gap 2mm) with semilune pattern (semicircle shape of diameter 294mm) with the corrosivity etching solution, the polyimide piece of diameter 298mm is made as lower insulation layer 3.And, as shown in Figure 2, be that bonding sheet (not shown) carries out bonding so that the pears skin shape face of silicon chip becomes the table side via the epoxy of thickness 10 μ m in the copper-clad surface side of copper clad laminate.Pasting the water route 7 that has the cooling water of diameter 6mm for the sheet of one in inside, is bonding sheet and pasting to the aluminum substrate 5 of thickness of slab 15mm, diameter 298mm via described epoxy, the pears skin shape face of silicon chip is become show side, is the substrate adsorption plane.
Then, on the pears skin shape face of above-mentioned little silicon chip,, be that the silicon particle of a few μ m shines the upper surface 2b that certain hour obtains stipulating equably with particle diameter with the air type sand-blasting machine via the mask of the regulation of stainless steel.That is, shown in the example 1 of table 1, form the interval a=37.3mm of height h=60 μ m, diameter d=21mm, adjacent protuberance and be the protuberance 1 of end face, obtain at substrate adsorption plane unit are 1m with pears skin shape face
2On possess the elasticity adsorption layer 2 of the protuberance 1 of n=830.And, adsorption electrode 4 is connected on the outside power supply 10, therefore take out current potential supply line 9 by insulating sleeve 8 to the outside from adsorption electrode 4, finish the electrostatic chuck 101 relevant with embodiment 1.
When above-mentioned resulting electrostatic chuck 101 with absorption affinity F=4900Pa adsorb/when keeping substrate 6, touch which kind of degree in order to confirm the protuberance 1 in the elasticity adsorption layer 2, carried out following test.With diameter 300mm, thickness 10mm and whole evenness W
hBe that transparent pyrex (pyrex) (registered trade mark) glass plate of 1 μ m is positioned on the substrate adsorption plane that the end face by protuberance 1 constitutes, utilize stamping machine to pressurize with plane pedestal.At this moment, on unit are, add up to 4900Pa by managing the deadweight and the institute's applied pressure that become to make glass plate.At first, under the state of pressurization,, during by the visual contact condition of confirming protuberance 1, confirmed that whole protuberance 1 is in its end face contact by transparent pyrex (registered trade mark) glass plate.By the way, when the situation that whole protuberance 1 is contacted with glass plate be not such situation when comparing, the appearance difference of Light Interference Streaks therefore can be by the visual state of differentiating both.In addition, as other test method, between the substrate adsorption plane of glass plate and electrostatic chuck 101, sandwich impact paper, when having confirmed to pressurize by stamping machine same as described abovely, in the reaction of the position of whole protuberance 1 impact paper, whole protuberances 1 is in its end face contact.And experiment as a comparison when carrying out identical experiment under the condition of total 2450Pa on the deadweight of glass plate and the total of institute applied pressure being made as 1/2 unit are, has confirmed that 2/3rds in whole protuberance 1 contacts with glass plate at its end face.
[embodiment 2]
To on the polyimide piece of thickness 25 μ m, be pasted with electrolytic copper foil 13 (Furukawa サ one キ Star ト Off オ イ Le (FurukawaCircuit Foil) (strain) system) that the surface is treated to the propylene epoxy bonds sheet 12 of composite sheet 11, thickness 13 μ m of silicon chip of thickness 10 μ m of pears skin shape and thickness 12 μ m and be cut into the circle of diameter 298mm respectively, by punch forming in 3MPa, 170 ℃ condition laminatedization.
For the Copper Foil with the single face side of the punching press body of above-mentioned laminationization is made as bipolar electrode, forming with its center by etch processes is the electrode (the interelectrode distance 3mm of adjacency) that symmetry axis carries out the 10 adjacent fan shape of cutting apart.Then, propylene epoxy bonds sheet 12 via the thickness same as described above 13 μ m that are cut into diameter 298mm, the polyimide piece 14 of overlapping thickness 50 μ m (kapton (kapton) the film model 200H of Dong Li E.I.Du Pont Company system) is to cover by the resulting electrode surface of above-mentioned etching, by condition same as described above, carry out punch forming and come lamination integratedly.
Then, the kapton single face splicing tape of thickness 55 μ m (this (okamoto) 1030E of Co., Ltd. of ridge) is bonded on by the pears skin shape face of above-mentioned resulting layered product whole, and for splice terminal on electrode, to be positioned on the heating plate towards upside by the electrode surface that polyimide piece 14 covers, weld terminal made of copper while heat.
Then, with above-mentioned employed identical kapton single face splicing tape on offer a plurality of holes so that the center configuration of the peristome of diameter 23mm is the mode on each summit of the equilateral triangle of 35mm in an edge lengths, thereby pattern mask is set, it is configured on the aluminum oxide porous vacuum cup, on this pattern mask, make the splicing tape side of above-mentioned resulting layered product carry out mounting mutually opposed to each other, and extraction is that vacuum is so that it becomes 1Pa.Thus, formation is corresponding concavo-convex with the aperture and the thickness of pattern mask, as described later, after the last strip off kapton single face splicing tape, is end face with the silicon sheet with pears skin shape face, forms such protuberance as shown in table 2.
The state that maintenance attracts with aluminum oxide porous vacuum cup, (モ メ Application テ イ Block パ Off オ one マ Application ス マ テ リ ア Le ズ ジ ヤ パ Application (Momentive Performance Materials Japan) the contract commercial firm of silicon-coating bonding agent 15 on the polyimides of the side that terminal made of copper is installed is unilateral, model TSE331) feasible becoming after the thickness 150 μ m, mounting thickness of slab 16mm and diameter 298mm and have the substrate 16 of aluminum in the water route of cooling water in inside, cut off the power supply of the pump that attracts vacuum cup, froth breaking is 1 hour in defoaming compartment, on heating plate integral body is heated to 140 ℃ afterwards, process was come the solidification of silicon bonding agent in several hours.Afterwards, break away from and clean from vacuum cup by making incorporate layered product, strip off covers the kapton single face splicing tape of the silicon chip with pears skin shape face, finishes the electrostatic chuck (No.1) relevant with embodiment 2 that possesses protuberance 1 as shown in figure 3.
In addition, as variation, except as the protuberance in the example 3 of record in forming above-mentioned table 1, obtain the electrostatic chuck relevant (No.2) with embodiments of the invention by the resulting electrostatic chuck of this embodiment same as described abovely.
[table 2]
About electrostatic chuck, carry respectively on ion implantation apparatus, on one side to supply with voltage ± 750V absorption/maintenance by above-mentioned resulting No.1 and No.2
Silicon wafer, on one side to this silicon wafer with average ion beam power 450W, injection rate 1 * 10
15Individual/cm
2Condition carry out ion and inject.At this moment, the condition with 2L/min is led to cooling water in the water route of aluminum substrate.And, during wafer surface temperature when measuring ion and inject, under the situation of adsorbing/keeping with the electrostatic chuck of No.1, the temperature rising can be suppressed to less than 48 ℃ by temperature label (thermolabel), in the electrostatic chuck of No.2, temperature can be risen is suppressed to less than 89 ℃.And obtain following result in the test of the electrostatic chuck that has used No.1: when making ion beam power increase to 600W, the temperature rising also is less than 60 ℃ in injection rate same as described above.This can be described as and the performance that is equal to gas-cooled electrostatic chuck in the past.
(description of reference numerals)
1: protuberance; 2: the elasticity adsorption layer; 2b: the upper surface beyond the protuberance of elasticity adsorption layer; 3: lower insulation layer; 4: adsorption electrode; 5: substrate; 6: substrate; 7: the water route; 8: insulating sleeve; 9: the current potential supply line; 10: power supply; 11: composite sheet; 12: bonding sheet (bondingsheet); 13: electrolytic copper foil; 14: polyimide piece; 15: the silicon bonding agent; 16: substrate; 100,101: electrostatic chuck.
Claims (7)
1. the manufacture method of an electrostatic chuck will be made as the substrate adsorption plane by the elasticity adsorption layer that possesses a plurality of protuberances that elastomeric material constitutes, and through adsorbing/keep substrate by this elasticity adsorption layer, and the manufacture method of this electrostatic chuck is characterised in that,
When the height with the protuberance in the elasticity adsorption layer is made as h, the quantity of the protuberance on the unit are in the substrate adsorption plane is made as n, the area of the end face in the protuberance is made as A, the spring rate that forms the elastomeric material of protuberance is made as E, adsorbing/keep whole evenness with absorption affinity F is W
hSubstrate the time, the mode of the relational expression (1) below satisfying with the amount δ that shrinks in the direction upper convex portion of absorption affinity F effect forms the elasticity adsorption layer, and the ratio ξ of the gross area of the protuberance end face on the unit are in the substrate adsorption plane is made as more than 10%,
5W
h〉=δ 〉=0.5W
h, wherein, δ=(h/nA) (F/E) ... (1)
Wherein, the unit of each value is the unit of each parantheses shown in interior: W
h(m), h (m), n are (individual/m
2), A (m
2), E (Pa), F (Pa), δ (m).
2. the manufacture method of electrostatic chuck according to claim 1, wherein,
The height h of protuberance is the following scopes of the above 1000 μ m of 1 μ m.
3. the manufacture method of electrostatic chuck according to claim 1 is characterized in that,
The spring rate E that forms the elastomeric material of protuberance is the following scope of the above 50MPa of 0.1MPa.
4. the manufacture method of electrostatic chuck according to claim 1, wherein,
The elastomeric material that forms protuberance is more than one that select from the group who is made of silicon rubber, acrylic rubber, acrylonitrile-butadiene rubber, isoprene rubber, polyurethane rubber, ethylene-propylene rubber, epichlorohydrin rubber, neoprene, styrene butadiene ribber, butadiene rubber, fluorubber and butyl rubber.
5. the manufacture method of electrostatic chuck according to claim 1, wherein,
The end face of protuberance possesses pears skin shape pattern.
6. the manufacture method of electrostatic chuck according to claim 1, wherein,
The evenness W of the integral body of substrate
hIt is the scope of 0.1 μ m～10 μ m.
7. the manufacture method of any described electrostatic chuck in the claim 1～6, wherein,
When the electrostatic chuck sheet that will possess elasticity adsorption layer, the upper insulation layer that is made of elastomeric material, the electrode layer that forms internal electrode and lower insulation layer is configured in the vacuum chuck device, between the elasticity adsorption layer of electrostatic chuck sheet and vacuum chuck device, accompany the pattern mask of regulation, by carrying out vacuum attraction under these circumstances, thereby obtain having formed elasticity adsorption layer with the corresponding protuberance of pattern mask.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-289260 | 2008-10-15 | ||
| JP2008289260 | 2008-10-15 | ||
| PCT/JP2009/067734 WO2010044398A1 (en) | 2008-10-15 | 2009-10-13 | Electrostatic chuck, and method for manufacturing the chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102187446A CN102187446A (en) | 2011-09-14 |
| CN102187446B true CN102187446B (en) | 2013-07-24 |
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ID=42106561
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980141296.6A Expired - Fee Related CN102187446B (en) | 2008-10-15 | 2009-10-13 | Electrostatic chuck, and method for manufacturing the chuck |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5458323B2 (en) |
| KR (1) | KR101559947B1 (en) |
| CN (1) | CN102187446B (en) |
| HK (1) | HK1158368A1 (en) |
| TW (1) | TWI467691B (en) |
| WO (1) | WO2010044398A1 (en) |
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|---|---|
| KR20110084888A (en) | 2011-07-26 |
| HK1158368A1 (en) | 2012-07-13 |
| KR101559947B1 (en) | 2015-10-13 |
| TW201026582A (en) | 2010-07-16 |
| CN102187446A (en) | 2011-09-14 |
| TWI467691B (en) | 2015-01-01 |
| WO2010044398A1 (en) | 2010-04-22 |
| JPWO2010044398A1 (en) | 2012-03-15 |
| JP5458323B2 (en) | 2014-04-02 |
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