CN221102047U - Electrostatic adsorption device - Google Patents
Electrostatic adsorption device Download PDFInfo
- Publication number
- CN221102047U CN221102047U CN202323103504.XU CN202323103504U CN221102047U CN 221102047 U CN221102047 U CN 221102047U CN 202323103504 U CN202323103504 U CN 202323103504U CN 221102047 U CN221102047 U CN 221102047U
- Authority
- CN
- China
- Prior art keywords
- layer
- dielectric
- electrode
- electrode layer
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 36
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 45
- 239000002156 adsorbate Substances 0.000 claims abstract description 31
- 238000005299 abrasion Methods 0.000 claims abstract description 21
- 239000004696 Poly ether ether ketone Substances 0.000 claims abstract description 15
- 229920002530 polyetherether ketone Polymers 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 229920001721 polyimide Polymers 0.000 claims description 53
- 239000004642 Polyimide Substances 0.000 claims description 51
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 238000007750 plasma spraying Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 21
- 238000009413 insulation Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 description 5
- 239000011224 oxide ceramic Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides an electrostatic adsorption device, which comprises an electrode layer and a dielectric layer, wherein the dielectric layer is a composite layer with at least two layers, and the electrostatic adsorption device comprises: a hydrophobic wear layer made of polyetheretherketone for contacting the adsorbate; and a dielectric connection layer for connecting the electrode layer and the hydrophobic abrasion-resistant layer. The electrostatic adsorption device provided by the utility model has excellent hydrophobicity, wear resistance and insulativity.
Description
Technical Field
The utility model belongs to the technical field of electrostatic adsorption, and particularly relates to an electrostatic adsorption device with hydrophobicity and wear resistance.
Background
The electrostatic chuck, also called electrostatic chuck, is a fixture for holding and fixing an adsorbate by utilizing the electrostatic adsorption principle, is applied to vacuum and plasma environments, is mainly used for adsorbing ultra-clean thin sheets (such as silicon wafers), keeps the adsorbate with good flatness, can inhibit deformation of the adsorbate in the production process, can regulate the temperature of the adsorbate, is a core component of high-end equipment such as PVD, ETCH, ion implantation and the like, and has been widely applied to the manufacturing process of semiconductors in the plasma and vacuum environments.
The patent of China patent No. CN1311538C (issued to CN1311538C, application No. 200410086830.7) discloses an electrostatic adsorbing device, a plasma treating device and a plasma treating method, wherein an electrostatic adsorbing portion composed of a three-layer structure of a lower dielectric layer, an electrode layer and an upper dielectric layer formed by various sputtering methods is formed on a main surface (upper surface) of a susceptor, and preferably, the lower dielectric layer and the upper dielectric layer are composed of ceramics containing at least one of alumina (Al 2O3) and zirconia (ZrO 2) as main components. The upper dielectric layer of the electrostatic adsorption device is made of alumina ceramic (Al 2O3), and the alumina ceramic (Al 2O3) is easy to absorb water molecules in air, so that the insulation resistance of the upper dielectric layer is reduced, the insulation performance of the upper dielectric layer is reduced, and the coulomb force of the electrostatic adsorption device is reduced, which is a technical problem to be solved.
The technical scheme of the Chinese patent utility model, namely a handheld electrostatic chuck device, with an authorized bulletin number of CN205900517U (the authorized bulletin number: CN205900517U, application number: 201620610230.4) discloses a handheld electrostatic chuck device, which comprises a polyimide electrostatic film and an electrostatic film supporting plate for supporting the polyimide electrostatic film, wherein the polyimide electrostatic film comprises a polyimide film and a conductor attached to the polyimide film. The dielectric layer of the handheld electrostatic chuck device is made of polyimide, and the dielectric layer of the handheld electrostatic chuck device is scratched and punctured easily in the using process because polyimide is not abrasion-resistant, so that the handheld electrostatic chuck device has a discharge breakdown phenomenon, and the technical problem to be solved is solved.
Disclosure of utility model
The utility model aims to provide an electrostatic adsorption device which is used for solving the problems of poor hydrophobicity and poor wear resistance of a dielectric layer.
In order to solve the above technical problems, the present utility model provides an electrostatic adsorption device, which includes an electrode layer and a dielectric layer, wherein the dielectric layer is a composite layer having at least two layers, and includes: a hydrophobic wear layer made of polyetheretherketone for contacting the adsorbate; and a dielectric connection layer for connecting the electrode layer and the hydrophobic abrasion-resistant layer.
Further, the electrostatic adsorption device further includes an insulator layer, the electrode layer is disposed on a surface of the insulator layer, and the dielectric layer covers the electrode layer.
Further, the adsorbate is placed on the surface of the hydrophobic wear-resistant layer, and the electrode layer is connected with the positive electrode or the negative electrode of the direct current power supply.
Further, the thickness of the hydrophobic wear-resistant layer is 30-55 mu m.
Further, the thickness of the dielectric connection layer made of alumina ceramic is 0.1mm to 0.3mm.
Further, the thickness of the dielectric connection layer made of polyimide is 25 μm to 40 μm.
Further, the electrode layer made of metallic tungsten or aluminum, and the dielectric connection layer made of alumina ceramic are connected by plasma spraying.
Further, the electrode layer made of metal tungsten or aluminum, and the dielectric connection layer made of polyimide are connected by adhesive bonding.
Further, the hydrophobic wear layer is connected to the dielectric connection layer made of alumina ceramic by cementing.
Further, the hydrophobic abrasion-resistant layer is connected with the dielectric connection layer made of polyimide by gluing.
Compared with the prior art, the utility model has the beneficial technical effects that:
The dielectric layer of the electrostatic adsorption device in the prior art is generally made of alumina ceramic (Al 2O3) or Polyimide (PI). The electrostatic adsorption device in the prior art adopts alumina ceramic (Al 2O3) to manufacture a dielectric layer, and the alumina ceramic (Al 2O3) is easy to absorb water molecules in the air, so that the insulation resistance of the dielectric layer is reduced, the insulation performance of the dielectric layer is reduced, and the coulomb force of the electrostatic adsorption device in the prior art is reduced; the electrostatic adsorption device in the prior art adopts Polyimide (PI) to manufacture a dielectric layer, and because Polyimide (PI) is not wear-resistant, the dielectric layer of the electrostatic adsorption device in the prior art is easy to scratch and puncture in the use process, so that the electrostatic adsorption device in the prior art has a discharge breakdown phenomenon.
The dielectric layer of the electrostatic adsorption device provided by the utility model is at least 2 composite layers, wherein one layer is the hydrophobic wear-resistant layer, and the other layer is the dielectric connecting layer. The hydrophobic wear-resistant layer is made of polyether-ether-ketone (PEEK), the polyether-ether-ketone (PEEK) has more excellent hydrophobicity than alumina ceramic (Al 2O3), the polyether-ether-ketone (PEEK) has more excellent wear resistance than Polyimide (PI), and the polyether-ether-ketone (PEEK) also has very excellent insulativity. The dielectric connecting layer is made of insulating materials, can be firmly connected with the hydrophobic wear-resistant layer, and can be firmly connected with the electrode layer. Therefore, the dielectric layer has excellent hydrophobicity, wear resistance and insulation, and the electrostatic adsorption device with the dielectric layer provided by the utility model has excellent hydrophobicity, wear resistance and insulation.
Drawings
FIG. 1 is a schematic view showing a structure in which a positive voltage is applied to an electrode layer of an electrostatic chuck according to embodiment 1
FIG. 2 is a schematic diagram showing a structure in which a negative voltage is applied to an electrode layer of an electrostatic chuck according to embodiment 1
FIG. 3 is a schematic view of an electrostatic chuck device according to example 2
Reference numerals illustrate: 10. 20-electrostatic adsorption device; 11. 211, 212-electrode layers; 12. 221, 222-dielectric layer; 121. 2211, 2221-hydrophobic wear layer; 122. 2212, 2222-dielectric connection layer; 13. 23-an insulator layer; 14. 24-adsorbate; 15. 251, 252-dc power supply; 16. 261, 262-insulated power lines.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings and examples. It should be noted that the detailed description is merely illustrative of the utility model and is not intended to limit the utility model.
Example 1
Referring to fig. 1, the present embodiment provides an electrostatic adsorbing device 10 including an electrode layer 11, a dielectric layer 12, and an insulator layer 13.
The electrode layer 11 is disposed on the surface of the insulator layer 13, the dielectric layer 12 covers the electrode layer 11, and the electrode layer 11 is connected to a dc power supply 15 through an insulating power supply line 16.
The dielectric layer 12 is at least 2 composite layers, one of which is a hydrophobic wear-resistant layer 121 and the other of which is a dielectric connecting layer 122.
The hydrophobic abrasion layer 121 is in contact with the adsorbate 14 (e.g., a transparent substrate). The dielectric connecting layer 122 is connected with the hydrophobic abrasion-resistant layer 121; the dielectric connection layer 122 is connected to the electrode layer 11, or the dielectric connection layer 122 is connected to the electrode layer 11 through a thin film layer (not shown) having insulation properties. That is, one surface of the hydrophobic abrasion-resistant layer 121 is in contact with the adsorbate 14 (e.g., a transparent substrate) as an adsorption surface, and the other surface of the hydrophobic abrasion-resistant layer 121 is connected to the dielectric connection layer 122; one surface of the dielectric connection layer 122 is connected to the hydrophobic abrasion-resistant layer 121, and the other surface of the dielectric connection layer 122 is connected to the electrode layer 11 or is connected to the electrode layer 11 through a film layer (not shown) having insulation properties.
The hydrophobic wear-resistant layer 121 is made of polyether ether ketone (PEEK); the dielectric connection layer 122 is made of an insulating material, the dielectric connection layer 122 can be firmly connected with the hydrophobic wear-resistant layer 121, and the dielectric connection layer 122 can be firmly connected with the electrode layer 11.
As shown in fig. 1, in the electrostatic adsorbing apparatus 10 of the present embodiment, the adsorbate 14 (e.g., a transparent substrate) is placed on the surface of the hydrophobic abrasion layer 121 of the dielectric layer 12 in the electrostatic adsorbing apparatus 10, the electrode layer 11 is connected to the positive electrode of the dc power supply 15 through the insulating power supply line 16, and then a positive voltage is applied to the electrode layer 11. Accordingly, the electrode layer 11 is charged with positive charges, so that negative charges are induced to the portion of the adsorbate 14 (e.g., transparent substrate) corresponding to the electrode layer 11, and the electrostatic adsorbing means 10 performs electrostatic adsorption fixation of the adsorbate 14 (e.g., transparent substrate) by coulomb force.
As shown in fig. 2, in the electrostatic adsorbing apparatus 10 of the present embodiment, the adsorbate 14 (e.g., a transparent substrate) is placed on the surface of the hydrophobic abrasion layer 121 of the dielectric layer 12 in the electrostatic adsorbing apparatus 10, the electrode layer 11 is connected to the negative electrode of the dc power supply 15 through the insulating power supply line 16, and then a negative voltage is applied to the electrode layer 11. Accordingly, the electrode layer 11 is charged with negative charges, so that positive charges are induced to the portion of the adsorbate 14 (e.g., transparent substrate) corresponding to the electrode layer 11, and the electrostatic adsorbing means 10 performs electrostatic adsorption fixation of the adsorbate 14 (e.g., transparent substrate) by coulomb force.
The dielectric layer of the electrostatic adsorption device in the prior art is generally made of alumina ceramic (Al 2O3) or Polyimide (PI). The electrostatic adsorption device in the prior art adopts alumina ceramic (Al 2O3) to manufacture a dielectric layer, and the alumina ceramic (Al 2O3) is easy to absorb water molecules in the air, so that the insulation resistance of the dielectric layer is reduced, the insulation performance of the dielectric layer is reduced, and the coulomb force of the electrostatic adsorption device in the prior art is reduced; the electrostatic adsorption device in the prior art adopts Polyimide (PI) to manufacture a dielectric layer, and because Polyimide (PI) is not wear-resistant, the dielectric layer of the electrostatic adsorption device in the prior art is easy to scratch and puncture in the use process, so that the electrostatic adsorption device in the prior art has a discharge breakdown phenomenon.
The dielectric layer 12 of the electrostatic adsorbing device 10 provided in this embodiment is at least 2 composite layers, wherein one layer is the hydrophobic wear-resistant layer 121, and the other layer is the dielectric connecting layer 122. The hydrophobic wear-resistant layer 121 is made of polyether ether ketone (PEEK), which has more excellent hydrophobicity than alumina ceramic (Al 2O3), has more excellent wear resistance than Polyimide (PI), and also has very excellent insulation. The dielectric connection layer 122 is made of an insulating material, the dielectric connection layer 122 can be firmly connected with the hydrophobic wear-resistant layer 121, and the dielectric connection layer 122 can be firmly connected with the electrode layer 11. Accordingly, the dielectric layer 12 has excellent hydrophobicity, abrasion resistance, and insulation, and the electrostatic adsorbing apparatus 10 having the dielectric layer 12 provided in this embodiment has excellent hydrophobicity, abrasion resistance, and insulation.
The dielectric connection layer 122 is made of a material, preferably aluminum oxide ceramic (Al 2O3) or Polyimide (PI). The dielectric connecting layer 122 is made of alumina ceramic (Al 2O3), the alumina ceramic (Al 2O3) has good insulation performance in the environment with low humidity, the dielectric connecting layer 122 made of alumina ceramic (Al 2O3) is not in contact with the adsorbate 14 (such as a transparent substrate), water molecules in the air are prevented from being absorbed, the dielectric connecting layer 122 made of alumina ceramic (Al 2O3) has good insulation performance, the dielectric connecting layer 122 made of alumina ceramic (Al 2O3) can be firmly connected with the hydrophobic wear layer 121, and the dielectric connecting layer 122 made of alumina ceramic (Al 2O3) can be firmly connected with the electrode layer 11. The material of the dielectric connection layer 122 is Polyimide (PI), the insulating property of the Polyimide (PI) is good, the insulating property of the Polyimide (PI) is better than that of alumina ceramic (Al 2O3), the dielectric connection layer 122 made of Polyimide (PI) is not in contact with the adsorbate 14 (such as a transparent substrate), the situation that the dielectric connection layer 122 made of Polyimide (PI) is worn is avoided, the dielectric connection layer 122 made of Polyimide (PI) can be firmly connected with the hydrophobic wear-resistant layer 121, and the dielectric connection layer 122 made of Polyimide (PI) can be firmly connected with the electrode layer 11.
The thickness of the hydrophobic abrasion-resistant layer 121 is preferably 30 μm to 55 μm. The dielectric connecting layer 122 is made of alumina ceramic (Al 2O3), and the thickness of the dielectric connecting layer 122 is preferably 0.1-0.3 mm; the dielectric connection layer 122 is made of Polyimide (PI), and the thickness of the dielectric connection layer 122 is preferably 25 μm to 40 μm. Therefore, the electrostatic adsorbing device 10 can generate enough coulomb force to the adsorbate 14 (such as a transparent substrate), so that electrostatic adsorption fixation of the adsorbate 14 (such as a transparent substrate) by the electrostatic adsorbing device 10 can be ensured.
The insulator layer 13 is preferably made of alumina ceramic (Al 2O3) or Polyimide (PI), so that the insulator layer 13 has good insulating properties.
The electrode layer 11 is made of a material, preferably tungsten or aluminum, so that the electrode layer 11 has good electrical and thermal conductivity and is suitable for spraying.
The electrode layer 11 is made of tungsten or aluminum, a primer for spraying is coated on the surface of the electrode layer 11, then aluminum oxide ceramic (Al 2O3) is uniformly sprayed on the surface of the electrode layer 11 by using a plasma spraying device to form the dielectric connecting layer 122, the dielectric connecting layer 122 realizes insulation coverage on the electrode layer 11, aluminum oxide ceramic (Al 2O3) is adopted, the dielectric connecting layer 122 is made by using a plasma spraying process, the operation is simple and convenient, and firm connection between the dielectric connecting layer 122 and the electrode layer 11 can be realized. After the spraying is completed, the surface of the dielectric connection layer 122 is preferably smoothed by grinding.
The electrode layer 11 is made of tungsten or aluminum, the dielectric connecting layer 122 is made of Polyimide (PI), the surface of the electrode layer 11 is coated with an adhesive, then the dielectric connecting layer 122 is adhered to the surface of the electrode layer 11, the connection between the dielectric connecting layer 122 and the electrode layer 11 is achieved, and the dielectric connecting layer 122 is adhered to the surface of the electrode layer 11 in a gluing mode, so that the operation is simple and convenient, and the connection is firm.
The dielectric connecting layer 122 is made of alumina ceramic (Al 2O3), an adhesive is applied on the surface of the dielectric connecting layer 122, then the hydrophobic wear-resistant layer 121 is adhered on the surface of the dielectric connecting layer 122, so that the connection between the hydrophobic wear-resistant layer 121 and the dielectric connecting layer 122 is realized, and the hydrophobic wear-resistant layer 121 is adhered on the surface of the dielectric connecting layer 122 in a cementing manner, so that the operation is simple and convenient, and the connection is firm.
The dielectric connection layer 122 is made of alumina ceramic (Al 2O3), preferably alumina ceramic (Al 2O3) having a purity of 99.5% or more, so that the dielectric connection layer 122 has a low temperature dependency of insulation resistance and can suppress a decrease in insulation resistance with respect to an increase in temperature.
The dielectric connection layer 122 is made of aluminum oxide ceramic (Al 2O3), preferably aluminum oxide ceramic (Al 2O3) having a relative density of 98% or more, so that the dielectric connection layer 122 has almost no pores on the surface and inside. The presence of pores reduces the coulombic force of the electrostatic chuck 10 to the adsorbate 14 (e.g., transparent substrate), reducing the adsorbability of the electrostatic chuck 10 to the adsorbate 14 (e.g., transparent substrate).
The dielectric connecting layer 122 is made of Polyimide (PI), an adhesive is applied on the surface of the dielectric connecting layer 122, then the hydrophobic wear-resistant layer 121 is adhered on the surface of the dielectric connecting layer 122, so that the connection between the hydrophobic wear-resistant layer 121 and the dielectric connecting layer 122 is realized, and the hydrophobic wear-resistant layer 121 is adhered on the surface of the dielectric connecting layer 122 in a gluing manner, so that the operation is simple and convenient, and the connection is firm.
Example 2
Referring to fig. 3, the present embodiment provides another electrostatic adsorbing device 20, the electrostatic adsorbing device 20 including an electrode layer 211, an electrode layer 212, a dielectric layer 221, a dielectric layer 222, and an insulator layer 23.
The electrode layer of the electrostatic adsorbing apparatus 20 adopts a bipolar type, and includes the electrode layer 211 and the electrode layer 212. The electrode layer 211 is insulated from the electrode layer 212.
The dielectric layer 221 is at least 2 composite layers, one of which is a hydrophobic abrasion-resistant layer 2211 and the other of which is a dielectric connection layer 2212.
The dielectric layer 222 is at least 2 composite layers, one of which is a hydrophobic abrasion-resistant layer 2221 and the other of which is a dielectric connection layer 2222.
The electrode layer 211, the hydrophobic abrasion-resistant layer 2211 and the dielectric connection layer 2212 of the dielectric layer 221, the insulator layer 23, the adsorbate 24 (e.g., transparent substrate), the direct current power supply 251 and the insulating power supply line 261 are connected to each other and the materials used for them are described in example 1.
The interconnection of the electrode layer 212, the hydrophobic abrasion layer 2221 and the dielectric connection layer 2222 of the dielectric layer 222, the insulator layer 23, the adsorbate 24 (e.g., transparent substrate), the dc power supply 252 and the insulated power supply wire 262, and materials used therefor are described in example 1.
As shown in fig. 3, in the electrostatic adsorbing apparatus 20 of the present embodiment, the adsorbate 24 (e.g., a transparent substrate) is placed on the surfaces of the hydrophobic abrasion layer 2211 of the dielectric layer 221 and the hydrophobic abrasion layer 2221 of the dielectric layer 222 in the electrostatic adsorbing apparatus 20.
The electrode layer 211 is connected to the positive electrode of the dc power supply 251 through the insulating power line 261, and then a positive voltage is applied to the electrode layer 211. Accordingly, the electrode layer 211 is charged with positive charges, so that negative charges are induced to the portion of the adsorbate 24 (e.g., transparent substrate) corresponding to the electrode layer 211, and the electrostatic adsorption device 20 performs electrostatic adsorption fixation of the adsorbate 24 (e.g., transparent substrate) by coulomb force.
The electrode layer 212 is connected to the negative electrode of the dc power supply 252 through the insulating power supply line 262, and then a negative voltage is applied to the electrode layer 212. Accordingly, the electrode layer 212 is charged with negative charges, so that positive charges are induced to the portion of the adsorbate 24 (e.g., transparent substrate) corresponding to the electrode layer 212, and the electrostatic adsorbing means 20 performs electrostatic adsorption fixation of the adsorbate 24 (e.g., transparent substrate) by coulomb force.
The electrode layer 211 and the electrode layer 212 may be both connected to a positive electrode, both connected to a negative electrode, or one connected to a positive electrode and the other connected to a negative electrode.
The foregoing description is only of a preferred embodiment of the utility model and is not intended to limit the utility model thereto. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. An electrostatic chuck comprising an electrode layer and a dielectric layer, wherein the dielectric layer is a composite layer having at least two layers, comprising:
a hydrophobic wear layer made of polyetheretherketone for contacting the adsorbate; and
And a dielectric connection layer for connecting the electrode layer and the hydrophobic abrasion-resistant layer.
2. The electrostatic chuck of claim 1, wherein: the electrostatic adsorption device further includes an insulator layer, the electrode layer is disposed on a surface of the insulator layer, and the dielectric layer covers the electrode layer.
3. The electrostatic chuck of claim 2, wherein: the adsorbate is placed on the surface of the hydrophobic wear-resistant layer, and the electrode layer is connected with the positive electrode or the negative electrode of the direct current power supply.
4. An electrostatic chuck according to claim 1, 2 or 3, wherein: the thickness of the hydrophobic wear-resistant layer is 30-55 mu m.
5. The electrostatic chuck of claim 4, wherein: the thickness of the dielectric connection layer made of alumina ceramic is 0.1 mm-0.3 mm.
6. The electrostatic chuck of claim 4, wherein: the thickness of the dielectric connection layer made of polyimide is 25-40 μm.
7. An electrostatic chuck according to claim 1, 2 or 3, wherein: the electrode layer made of tungsten metal or aluminum, and the dielectric connection layer made of alumina ceramic are connected by plasma spraying.
8. An electrostatic chuck according to claim 1, 2 or 3, wherein: the electrode layer made of metal tungsten or aluminum, and the dielectric connection layer made of polyimide are connected by adhesive bonding.
9. An electrostatic chuck according to claim 1, 2 or 3, wherein: the hydrophobic wear-resistant layer is connected with the dielectric connecting layer made of alumina ceramic through cementing.
10. An electrostatic chuck according to claim 1, 2 or 3, wherein: the hydrophobic wear-resistant layer is connected with the dielectric connecting layer made of polyimide through glue joint.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323103504.XU CN221102047U (en) | 2023-11-17 | 2023-11-17 | Electrostatic adsorption device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323103504.XU CN221102047U (en) | 2023-11-17 | 2023-11-17 | Electrostatic adsorption device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221102047U true CN221102047U (en) | 2024-06-07 |
Family
ID=91309855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323103504.XU Active CN221102047U (en) | 2023-11-17 | 2023-11-17 | Electrostatic adsorption device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221102047U (en) |
-
2023
- 2023-11-17 CN CN202323103504.XU patent/CN221102047U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100220212B1 (en) | Electrostatic chuck | |
| TW410414B (en) | Electrostatic wafer clamp having low particulate contamination of wafers | |
| US20120154974A1 (en) | High efficiency electrostatic chuck assembly for semiconductor wafer processing | |
| US10389278B2 (en) | Electrostatic chuck device with multiple fine protrusions or multiple fine recesses | |
| CN102473668B (en) | Electrostatic attracting structure and fabricating method therefor | |
| WO2020044843A1 (en) | Electrostatic chuck device and method of manufacturing electrostatic chuck device | |
| JP2008042139A (en) | Electrostatic chuck device | |
| JP4943085B2 (en) | Electrostatic chuck apparatus and plasma processing apparatus | |
| CN104241183A (en) | Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device | |
| CN221102047U (en) | Electrostatic adsorption device | |
| JPS63283037A (en) | Statically attracting apparatus | |
| KR20240055140A (en) | Electrostatic chuck device | |
| JP2009141003A (en) | Electrostatic chuck | |
| KR20100137679A (en) | Glass electrostatic chuck and fabrication method thereof | |
| KR20070113959A (en) | Electrostatic adsorption apparatus | |
| KR20100090559A (en) | Electrostatic chuck having aerosol coating layer and fabrication method thereof | |
| JP5343802B2 (en) | Electrostatic chuck device | |
| JP2006066857A (en) | Bipolar electrostatic chuck | |
| JP4890428B2 (en) | Electrostatic chuck | |
| JP7335371B2 (en) | Electrostatic chuck device | |
| TW202145432A (en) | Electrostatic chuck device and sleeve for electrostatic chuck device | |
| JP2004079861A (en) | Electrostatic chuck | |
| JP2000183143A (en) | Electrostatic chuck | |
| JP2020178077A (en) | Electrostatic chuck device and method for manufacturing the same | |
| JP2006049357A (en) | Electrostatic chuck and equipment mounting it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |