CN103904012B - A kind of vacuum cup of TSV silicon chips - Google Patents
A kind of vacuum cup of TSV silicon chips Download PDFInfo
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- CN103904012B CN103904012B CN201210586865.1A CN201210586865A CN103904012B CN 103904012 B CN103904012 B CN 103904012B CN 201210586865 A CN201210586865 A CN 201210586865A CN 103904012 B CN103904012 B CN 103904012B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
The invention belongs to semiconductor lithography manufacturing technology field, it is related to the mobile device of TSV silicon chips, and in particular to the vacuum cup of TSV silicon chips.The vacuum cup includes the adsorption hole group that sucker base, the adsorption layer on setting sucker base top, the vacuum chamber being arranged on inside sucker base and array arrangement are communicated on adsorption layer with vacuum chamber, the adsorption layer includes central core and the annulate lamella around core, and the annulate lamella includes the nested at least one annular resilient adsorption layer and at least one annular rigid adsorption layer for setting.The sucker that the present invention is provided is become in order to face is adsorbed an absorption using elastic absorption layer and the adsorption area for changing from the inside to the outside, increased the absorption firmness of TVS silicon chips.In order to prevent TVS silicon chips warpage caused by the deformation of elastic absorption layer, adsorption plane is designed by the way of rigid adsorption layer and elastic absorption layer ring-type alternate layout and setting difference in height so that the flatness of TSV silicon chips can be still kept during absorption.
Description
Technical field
The invention belongs to semiconductor lithography manufacturing technology field, it is related to the mobile device of TSV silicon chips, and in particular to TSV silicon
The vacuum cup of piece.
Background technology
TSV is called silicon hole（Through-Silicon-Via）, it is a kind of system-level integrated morphology, the structure passes through
Multi-layer silicon planar, stacked, then be attached by the through hole on plane normal direction and form.TSV silicon chips have three-dimensional heap
Interconnection line is most short, appearance and size is minimum and can realize the advantages of 3D is chip-stacked between folded density maximum, chip, extensively should
For computer, communication, automotive electronics, aerospace field.
In the prior art, the main clamping and conveying that silicon chip is carried out using vacuum cup technology, i.e., will by vacuum suction
Silicon chip is close to sucker, it is ensured that the transmission stability of silicon chip, in order to be adsorbed to it in the state of the flatness for keeping silicon chip
Keep, it is desirable to which the flatness of chuck surface is high, while requiring that absorption affinity uniformly prevents from causing silicon chip surface warpage, deform.It is existing
Have in technology and disclose a kind of silicon wafer sucking disc, chuck surface progressive encryption from inside to outside, when silicon chip is adsorbed, absorption affinity is uniform,
But the difficulty of processing on surface fails to reduce.
In high-end field of lithography, the silicon chip being transferred in work stage has high-precision eccentric and deflection to require.In theory
On, because silicon chip has round edge and the big geometric properties of breach two, it is only necessary to pass through Photoelectric Detection CCD on silicon chip round edge
（Charge Couple Device）Through mode scanning is carried out, enough characteristic points are obtained, it is possible to the center of circle position of silicon chip is obtained
Put and breach direction.But in fact, TSV silicon chips are bonded silicon chip as one, claim with the geometry spy different from other silicon chips,
Positioning aspect, TSV silicon chips bottom is curved surface, and referring to Fig. 1, because traditional chuck surface 101 is ceramic material, surface is difficult shape
Become, the contact area with the curved surface of TSV silicon chips 102 is small, absorption is loosely.
The content of the invention
The technical problems to be solved by the invention are the vacuum cup absorption problems loosely of TSV silicon chips, in order to overcome with
A kind of upper deficiency, there is provided vacuum cup of TSV silicon chips.
In order to solve the above-mentioned technical problem, the technical scheme is that：The vacuum cup includes sucker base, sets
The adsorption layer on sucker base top, the vacuum chamber being arranged on inside sucker base and array arrangement on adsorption layer with vacuum chamber phase
Logical adsorption hole group, the adsorption layer includes central core and the annulate lamella around core, and the annulate lamella includes nested setting
At least one annular resilient adsorption layer and at least one annular rigid adsorption layer.
Further, elastic absorption layer and the interspersed setting of rigid adsorption layer, such as annulate lamella include one successively from inside to outside
Above elastic absorption layer, more than one rigid adsorption layer, more than one elastic absorption layer and more than one rigid adsorption layer.
Further, the elastic absorption layer is arranged alternately with rigid adsorption layer, and for example annulate lamella includes successively from inside to outside
One elastic absorption layer, rigid adsorption layer, an elastic absorption layer and a rigid adsorption layer.
Elastic absorption layer can produce deformation with the curve form of TSV silicon chips, it is ensured that TSV silicon chips are good with adsorption layer to be connect
Touch and adsorption effect.And rigid adsorption layer is used for the rigid contact surfaces of TSV silicon chips, prevent elastic absorption layer support force not enough, make
Warpage is produced in itself into TSV silicon chips, it is ensured that TSV silicon chips flatness in itself.
Further, the adsorption hole group includes core adsorption hole group and annulate lamella adsorption hole group, in annulate lamella adsorption hole group
Adsorption hole divided by matrix, the adsorption hole of colleague is evenly distributed on the circumference of an elastic absorption layer or a rigid adsorption layer
On, the adsorption hole of same column is distributed along by an outside radiation of the center of circle.
Further, the adsorption hole is constituted by a single hole or one group are porous.
Further, in the adsorption hole of same column, the adsorption area of the adsorption hole of inner side is not more than the absorption of the adsorption hole in outside
Area, the adsorption area of same column adsorption hole is in rising trend from inside to outside, and the adsorption area of the adsorption hole of colleague is identical.
When adsorption hole is a single hole, the adsorption area is the hole area of the single hole, when adsorption hole is one group porous
When, the adsorption area is the hole area sum in the porous all holes for including of the group.TSV silicon chips periphery relative to center need compared with
Big absorption affinity, by the adsorption area on the outside of increase, can effectively increase absorption affinity, so in adsorption process, reduce
The TSV silicon chips caused because suction is uneven deform in itself, and the adsorption area of each row adsorption hole can be by specific TSV silicon chips weight
Amount, is drawn by simulation analysis.
Further, the elastic absorption floor height goes out adjacent rigid adsorption layer.
In absorption, elastic absorption layer has adapted to the curved surface of TSV silicon chips, and under absorption affinity effect, elastic absorption layer is pressed
Contracting, TSV silicon chips can fall in the plane of rigid adsorption layer, maintain the flatness of TSV silicon chips.
Further, the rigid adsorption layer in outside higher than inner side rigid adsorption layer, difference in height by TSV silicon chips curve form
Calculate release, difference in height be used for compensate the difference in height that TSV silicon chips bottom surface curvature is brought, can so make TSV silicon chips absorption when
Ensure certain flatness.
Further, the elastic absorption layer is elastomeric material, and multiple elastic absorption layers can use different elastomer materials
Material.
Further, the elastomeric material is thermoplastic polyurethane, and thermoplastic polyurethane has high-modulus, high intensity, height
The characteristic such as elongation, wear-resistant, good processability, decomposable asymmetric choice net, thus it is good with elasticity using the elastic absorption layer of the material, it is wear-resisting
The advantages of damage and environmental protection, in use, elastic absorption layer compression and resilience multiplicity are high, can keep long-term stabilization
Property, improve the service life of whole ceramics sucker.
The sucker that the present invention is provided using elastic absorption layer and the adsorption area that changes from the inside to the outside, by an absorption become in order to
Face is adsorbed, and increased the absorption firmness of TVS silicon chips.In order to prevent TVS silicon chips warpage caused by the deformation of elastic absorption layer, adopt
Adsorption plane is designed with the mode of rigid adsorption layer and elastic absorption layer ring-type alternate layout and setting difference in height so that during absorption
The flatness of TSV silicon chips can still be kept.
Brief description of the drawings
Fig. 1 is prior art problem schematic diagram；
Fig. 2 is the sucker structure schematic diagram of embodiment 1；
Fig. 3 is the A-A of Fig. 3 to profile；
Fig. 4 is the B portions partial enlarged drawing of Fig. 4；
Fig. 5 is the sucker structure schematic diagram of embodiment 2；
Fig. 6 is the operation principle schematic diagram of elastic absorption layer.
Shown in figure：
1- sucker bases, 101- chuck surfaces, 102-TVS silicon chips, 103- elastic layers；
2- adsorption layers, 21- central cores, 22- elastic absorptions layer, 23- rigidity adsorption layers；
The elastic absorptions of 221- first layer, the elastic absorptions of 222- second layer, the elastic absorptions of 223- the 3rd layer, in 224-
Circle elastic absorption layer, 225- outer rings elastic absorption layer；
The rigid adsorption layers of 231- first, the rigid adsorption layers of 232- second, the rigid adsorption layers of 233- the 3rd, in 234-
The rigid adsorption layer of circle, 235- outer rings rigidity adsorption layer；
3- vacuum chambers；
4- adsorption holes group, 41- cores adsorption hole group, 42- annulate lamellas adsorption hole group；
421- circumference, 422- radiation, the small single holes of 423-, the big single holes of 424-, 425- is porous；
The small single hole apertures of D1-, the big single hole apertures of D2-, the elastic absorptions of H1- the 3rd layer and the 3rd rigid adsorption layer
Difference in height, the difference in height between the rigid adsorption layers of H2- the 3rd and the second rigid adsorption layer.
Specific embodiment
The present invention is described in detail below in conjunction with the accompanying drawings：
Embodiment 1
As shown in Figures 2 and 3, vacuum cup of the present invention includes sucker base 1, sets the absorption on the top of sucker base 1
The adsorption hole group that layer 2, the vacuum chamber 3 being arranged on inside sucker base 1 and array arrangement are communicated on adsorption layer 2 with vacuum chamber 3
4, the adsorption layer 2 includes central core 21 and the annulate lamella around core, and the annulate lamella includes three rings being arranged alternately
Shape elastic absorption layer 22 and three annular rigid adsorption layers 23, that is, from inside to outside it is followed successively by the first elastic absorption layer 221, the
One rigid adsorption layer 231, the rigid adsorption layer 232 of the second elastic absorption layer 222, second, the 3rd elastic absorption layer 223 and the 3rd are firm
Property adsorption layer 233.
Adsorption hole group 4 includes core adsorption hole group 41 and annulate lamella adsorption hole group 42, and core adsorption hole group 41 is from interior
To outer point of three layers of even circumferential distribution, three layers are wrapped adsorption hole, 7 adsorption holes and 12 adsorption holes, annulate lamella absorption successively
Adsorption hole in hole group 41 is divided by matrix, and totally 6 rows 12 are arranged, the adsorption hole of colleague be evenly distributed on an elastic absorption layer 22 or
On one circumference 421 of rigid adsorption layer 23, the adsorption hole of same column is distributed along by an outside radiation 422 of the center of circle, altogether
There are 6 layers of 12 radiation.
The row of 3 row 12 on the rigid elastic absorption of adsorption layer 231 and second layer 222 of first elastic absorption layer 221, first
The aperture of small single hole 423 is D1, the described second rigid adsorption layer 232, the rigid adsorption layer of the 3rd elastic absorption layer 223 and the 3rd
The aperture of the big single hole 424 of the row of 3 row 12 is D2 on 233, and D2 is more than D1, that is, the hole area of big single hole 424 is more than small single hole
423 hole area, that is, the rigid elastic absorption of adsorption layer 231 and second layer 222 of the first elastic absorption layer 221, first suction
Attached area is less than the second rigid adsorption layer 232, the adsorption area of the rigid adsorption layer 233 of the 3rd elastic absorption layer 223 and the 3rd, tool
The selection of body aperture is drawn by specific silicon chip weight by simulation analysis.
As shown in figure 4, the difference in height of the rigid adsorption layer 233 of the 3rd elastic absorption layer 223 and the 3rd is H1, about
1mm, the first elastic absorption layer 221 and the second elastic absorption layer 222 are contour with the 3rd elastic absorption layer 223.Described 3rd
Height difference H 2 between the rigid adsorption layer 232 of rigid adsorption layer 233 and second, the second rigid rigidity of adsorption layer 232 and first is inhaled
Difference in height between attached layer 231（Do not show in figure）For compensating the difference in height that TSV silicon chip curvatures are brought, so as to absorption is effectively ensured
When flatness.
The material of the core 21 and rigid adsorption layer 23 is ceramics, and the material of the elastic absorption layer 22 is thermoplasticity
The elastomeric material of polyurethane.
It is pointed out that the first elastic absorption the 221, second elastic absorption of layer layer 222 and the 3rd elastic absorption layer 223 can
To select identical or different elastomeric material.
Embodiment 2
As shown in figure 5, reference implementation example 1, its difference is that the annulate lamella includes interspersed three ring-types for setting
Elastic absorption layer 22 and two annular rigid adsorption layers and two annular resilient adsorption layers, specifically from inside to outside inner ring is rigidly inhaled
Attached layer 234, inner ring elastic absorption layer 224, outer ring elastic absorption layer 225 and outer ring elastic absorption layer 235, the inner ring is rigidly inhaled
Small single hole 423, the adsorption hole set on the outer ring elastic absorption layer 225 are set on attached layer 234 and inner ring elastic absorption layer 224
Be porous 425, porous 425 hole area sum more than small single hole 423, big single hole is set on the outer ring elastic absorption layer 235
424, the hole area sum of the hole area not less than porous 425 of big single hole 424, the aperture in specific hole passes through specific silicon chip weight
Amount, is drawn by simulation analysis.The inner ring elastic absorption layer 224 and outer ring elastic absorption layer 225 are different elastomeric materials.
Principle explanation：Inventor increases by one layer of elastic layer 103 for the fastness for ensureing to adsorb on sucker, and principle is such as
Shown in Fig. 2, elastic layer 103 can produce deformation with the curve form of TSV silicon chips 102, it is ensured that TSV silicon chips are good with adsorption layer
Contact and adsorption effect.But single elastic layer 103 cannot ensure original flatness of TSV silicon chips, TSV silicon chips are caused to become
Shape, it is impossible to meet the requirement of application, therefore the technical scheme that the present invention is provided is on the basis of unitary elasticity layer technical scheme
Improvement project, operation principle is similar.
Specific implementation process is as follows：TSV silicon chips are positioned on adsorption layer 2 first, open vavuum pump, evacuate vacuum
Room 3, corresponding adsorption hole group 4 produces the absorption affinity to TSV silicon chips；In the presence of absorption affinity, the absorption of the TSV silicon chips elasticity of compression
Layer 22, absorption affinity size can make silicon chip touch rigid adsorption layer 23；Treat that TSV silicon chips and all rigid adsorption layers 23 are contacted
Afterwards, just adsorbed completely, there is certain flatness again while adsoptivity high is ensured.Sucker drives TSV silicon slice rotatings one
Circle, you can complete centering orientation, last Open valve, gas flows into vacuum chamber 3, completes the unloading of TSV silicon chips.
Examples detailed above is only that certain implementation special case of the invention is described, and any those skilled in the art is to appeal
Content simply change, converted, and belongs to need content to be protected in claim.
Claims (9)
1. a kind of vacuum cup, it includes sucker base, the adsorption layer that sets sucker base top, be arranged on inside sucker base
Vacuum chamber and array arrangement communicated with vacuum chamber on adsorption layer adsorption hole group, it is characterised in that the adsorption layer includes
Central core and the annulate lamella around core, the annulate lamella is including the nested at least one annular resilient adsorption layer for setting and extremely
A few annular rigid adsorption layer；The adsorption hole group includes core adsorption hole group and annulate lamella adsorption hole group, annulate lamella absorption
The adsorption hole of Kong Qunzhong is divided by matrix, and the adsorption hole of colleague is evenly distributed on an elastic absorption layer or a rigid adsorption layer
Circumference on, the adsorption hole of same column is distributed along by an outside radiation of the center of circle.
2. a kind of vacuum cup according to claim 1, it is characterised in that the elastic absorption layer and rigid adsorption layer intert
Set.
3. a kind of vacuum cup according to claim 2, it is characterised in that the elastic absorption layer replaces with rigidity adsorption layer
Set.
4. a kind of vacuum cup according to claim 2, it is characterised in that rigidity of the rigid adsorption layer in outside higher than inner side
Adsorption layer.
5. a kind of vacuum cup according to claim 1, it is characterised in that the elastic absorption floor height goes out adjacent rigidity suction
Attached layer.
6. a kind of vacuum cup according to claim 1, it is characterised in that the adsorption hole is porous by a single hole or a group
Composition.
7. a kind of vacuum cup according to claim 1, it is characterised in that in the adsorption hole of same column, the adsorption hole of inner side
Adsorption area is not more than the adsorption area of the adsorption hole in outside, and the adsorption area of same column adsorption hole is in rising trend from inside to outside,
The adsorption area of the adsorption hole of colleague is identical.
8. according to a kind of any vacuum cup of claim 1~7, it is characterised in that the elastic absorption layer is elastomer
Material, multiple elastic absorption layers can use different elastomeric materials.
9. a kind of vacuum cup according to claim 8, it is characterised in that the elastomeric material is thermoplastic polyurethane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210586865.1A CN103904012B (en) | 2012-12-28 | 2012-12-28 | A kind of vacuum cup of TSV silicon chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210586865.1A CN103904012B (en) | 2012-12-28 | 2012-12-28 | A kind of vacuum cup of TSV silicon chips |
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| Publication Number | Publication Date |
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| CN103904012A CN103904012A (en) | 2014-07-02 |
| CN103904012B true CN103904012B (en) | 2017-06-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105081971A (en) * | 2015-08-31 | 2015-11-25 | 平凉市老兵科技研发有限公司 | Transfer sucker for thinning machine |
| CN107776222A (en) * | 2016-08-25 | 2018-03-09 | 苏州光越微纳科技有限公司 | Large-area flat-plate adsorbs impressing mould and method for stamping |
| CN108206144B (en) * | 2016-12-19 | 2021-02-02 | 苏州能讯高能半导体有限公司 | Adsorption method of warped wafer and device using same |
| CN109727903A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Absorbent module, bonding pad disassembling apparatus and method and semiconductor packaging system |
| CN110323170B (en) * | 2018-03-30 | 2022-06-03 | 上海微电子装备（集团）股份有限公司 | Adsorption device and method for adjusting flatness of material |
| CN109015345A (en) * | 2018-07-26 | 2018-12-18 | 上海新昇半导体科技有限公司 | Grinding plate and milling apparatus |
| TWI701090B (en) * | 2019-01-17 | 2020-08-11 | 日月光半導體製造股份有限公司 | Panel handling apparatus and method thereof and multistage suction device |
| CN110202603B (en) * | 2019-07-01 | 2022-11-11 | 深圳市周大福珠宝制造有限公司 | Vacuum sucker and manufacturing method of sucker body |
| CN111473039A (en) * | 2020-03-04 | 2020-07-31 | 上海精测半导体技术有限公司 | Flexible panel leveling apparatus and method |
| CN114558839B (en) * | 2022-02-09 | 2023-07-28 | 苏州智程半导体科技股份有限公司 | Adsorption rotating device and single-chip wafer cleaning machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1866494A (en) * | 2006-06-12 | 2006-11-22 | 上海微电子装备有限公司 | High precision silicon slice bench and uses thereof |
| CN102109768A (en) * | 2009-12-29 | 2011-06-29 | 上海微电子装备有限公司 | Rotary silicon wafer carrying platform and method using same for precise alignment of silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI467691B (en) * | 2008-10-15 | 2015-01-01 | Creative Tech Corp | Electrostatic chuck and its manufacturing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866494A (en) * | 2006-06-12 | 2006-11-22 | 上海微电子装备有限公司 | High precision silicon slice bench and uses thereof |
| CN102109768A (en) * | 2009-12-29 | 2011-06-29 | 上海微电子装备有限公司 | Rotary silicon wafer carrying platform and method using same for precise alignment of silicon wafer |
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Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |