CN108206144B - Adsorption method of warped wafer and device using same - Google Patents

Adsorption method of warped wafer and device using same Download PDF

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CN108206144B
CN108206144B CN201611180576.6A CN201611180576A CN108206144B CN 108206144 B CN108206144 B CN 108206144B CN 201611180576 A CN201611180576 A CN 201611180576A CN 108206144 B CN108206144 B CN 108206144B
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wafer
warped
sucker
warped wafer
normal
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CN108206144A (en
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陈明辉
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Suzhou Nexun High Energy Semiconductor Co ltd
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Suzhou Nexun High Energy Semiconductor Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses an adsorption method of a warped wafer and a device using the same, belongs to the technical field of semiconductors, and is designed for solving the problem that the existing warped wafer cannot be adsorbed. The method for adsorbing the warped wafer comprises the steps of forming a normal adsorption state on the sucker by using a normal wafer, replacing the normal wafer by using the warped wafer, and horizontally adjusting and/or rotationally adjusting the position of the warped wafer on the sucker until the warped wafer is adsorbed on the sucker. The device comprises a sucker connected to a vacuum system, wherein a plurality of sucking holes are formed in the sucker; the vacuum system is provided with a control switch. The method for adsorbing the warped wafer does not discard the wafer due to warping as much as possible, so that as many wafers as possible can be successfully cut into chips, the yield is improved, and the cost is reduced. The device can use the adsorption method to photo-etch warped wafers, so that the wafers are prevented from being discarded, and the photo-etching effect is good.

Description

Adsorption method of warped wafer and device using same
Technical Field
The invention relates to the technical field of semiconductors, in particular to an adsorption method of a warped wafer and a device using the adsorption method.
Background
During semiconductor manufacturing, a large amount of stress inevitably accumulates on the wafer after undergoing multiple processes, resulting in partial or complete warp deformation of the wafer, and even wafer breakage when the stress exceeds the limit that the wafer can withstand.
The exposure process needs to place the wafer on a sucker, fix the wafer by suction through a vacuum suction hole on the sucker, and then carry out photoetching on the wafer. The sucking disc is usually provided with a plurality of sucking holes so as to fix the wafer better, and when the wafer is flat or has slight warping deformation, the sucking disc can adsorb the wafer and reduce the warping degree of the wafer; however, when the wafer is seriously deformed, vacuum leakage is generated between the chuck and the wafer, so that the wafer cannot be adsorbed, and thus, the wafer is rejected, and the yield is greatly influenced.
Disclosure of Invention
The invention aims to provide a method for adsorbing a warped wafer, which improves the yield and reduces the cost.
Another object of the present invention is to provide an apparatus that avoids the wafer from being discarded due to warpage.
To achieve the purpose, on one hand, the invention adopts the following technical scheme:
a warped wafer adsorption method is characterized in that a normal wafer is used for forming a normal adsorption state on a sucker, then the normal wafer is replaced by the warped wafer, and the position of the warped wafer on the sucker is horizontally adjusted and/or rotationally adjusted until the warped wafer is adsorbed on the sucker.
In particular, the adsorption process comprises the following steps:
step 1, sending a piece of normal wafer to the sucker, starting a vacuum system, and judging that the adsorption state of the sucker is normal by the vacuum system;
step 2, closing the vacuum system after obtaining an adsorption state normal signal sent by the vacuum system, and taking down the normal wafer;
step 3, placing the warped wafer on the sucker;
and 4, starting a vacuum system, and horizontally adjusting and/or rotationally adjusting the position of the warped wafer on the sucker until the warped wafer is adsorbed on the sucker.
Further, the method also comprises the following steps before the step 1:
step A, performing normal operation on all wafers, and classifying the wafers which are placed on the sucking disc and judged to be abnormally adsorbed by a vacuum system into warped wafers;
and B, independently placing all the warped wafers to wait for the second operation.
In particular, the leveling and/or rotation adjustment of the warped wafer is achieved manually or mechanically.
Particularly, when the warped wafer cannot be adsorbed on the sucker after being horizontally and/or rotationally adjusted to a certain degree or for a certain time, the warped wafer is restored to the original position, and then the edge of the warped wafer is pressed to be adsorbed on the sucker.
Further, pressing the warped wafer comprises the steps of:
step 61, pressing the edge of any side of the warped wafer to enable the warped wafer to be adsorbed on the sucker;
step 62, pressing the edge of the other side of the warped wafer, which is symmetrical about the circle center, so that the edge is adsorbed on the sucker;
step 63, checking whether all the warped wafers are adsorbed on the suckers, and if so, turning to step 65; otherwise go to step 64;
step 64, pressing the parts, still warped, of the warped wafers in sequence until all the warped wafers are adsorbed on the suckers;
and step 65, ending.
On the other hand, the invention adopts the following technical scheme:
the device using the method for adsorbing the warped wafer comprises a sucker connected to a vacuum system, wherein a plurality of sucking holes are formed in the sucker; and the vacuum system is provided with a control switch.
Particularly, a plurality of concentric annular bulges are formed on the sucker from the center to the edge, a concentric annular groove is formed between every two adjacent bulges, and the suction holes are regularly distributed on one or more bulges.
Particularly, the sucker is of a plane structure, and a plurality of suction holes are regularly distributed on the sucker.
The method for adsorbing the warped wafer uses the warped wafer to replace a normal wafer after the vacuum system judges that the vacuum system is normal in adsorption so as to ensure that the vacuum system continuously releases vacuum, and the warped wafer is adjusted in position or angle under the condition so as to be adsorbed on the sucking disc, so that the wafer is not discarded due to warping as much as possible, and as many wafers as possible can be successfully cut into chips, thereby improving the yield and reducing the cost.
The vacuum system of the device is provided with the control switch, the warped wafers can be photoetched by using the adsorption method, the wafers are prevented from being discarded, and the photoetching effect is good.
Drawings
FIG. 1 is a flow chart of a method for adsorbing a warped wafer according to a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a state where a chuck according to a preferred embodiment of the present invention is sucking a tilted wafer;
fig. 3 is a schematic structural diagram of a suction cup provided in a preferred embodiment of the present invention.
In the figure:
1. a suction cup; 2. warping the wafer; 3. a vacuum system; 11. and (4) sucking holes.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
The preferred embodiment:
the preferred embodiment discloses an adsorption method of a warped wafer. The adsorption method is that a normal wafer is used for forming a normal adsorption state on the sucker 1, then the warped wafer 2 is used for replacing the normal wafer, and the position of the warped wafer 2 on the sucker 1 is horizontally adjusted and/or rotationally adjusted until the warped wafer 2 is adsorbed on the sucker 1.
Semiconductor wafer production processes require a relatively long period of time, especially for those wafers with relatively complicated processing steps, and it is likely that the customer's schedule will be exceeded by adding a certain amount of product when it is found that some of the product is not processed (mainly by photolithography) due to warp deformation at the final stage of the overall process (e.g., metal routing or pressure points). If more tablets are initially dropped to ensure that a sufficient amount of product is produced in a timely manner, the final output may exceed the customer's predetermined amount and become waste, increasing costs and reducing benefits.
Since the vacuum system 3 finds a vacuum leak after the warped wafer 2 is sent to the chuck 1, it reports an abnormality and automatically turns off the vacuum system 3, and at this time, the warped wafer 2 cannot be adsorbed by the chuck 1 by adjusting the horizontal position or the placing angle thereof. Therefore, the important point of the adsorption method of the invention is to 'cheat' the vacuum system 3 to make it not report the abnormality, namely, a normal wafer is placed on the sucker 1, at this time, the vacuum system 3 is adsorbed normally, subsequent detection is not carried out, the normal wafer is replaced by the warped wafer 2, the vacuum system 3 will not find the abnormality, but continuously releases the vacuum to adsorb the warped wafer 2, at this time, the warped wafer 2 can be adsorbed by the sucker 1 by adjusting the horizontal position or the placing angle of the warped wafer 2.
After the adsorption method is used, some wafers with acceptable warping conditions, even some wafers with cracks and cracks can be smoothly photoetched, the wafers are completely not influenced to be cut into chips, the yield is ensured, and the efficiency and the benefit are improved.
The specific steps of the adsorption method are not limited as long as the vacuum system 3 can be used to make the warped wafer 2 on the chuck 1 still be the previous normal wafer, and then the vacuum is released continuously without reporting any abnormality. Preferably, as shown in fig. 1, the adsorption method comprises the steps of:
step 1, a piece of normal wafer is sent to the sucker 1, the vacuum system 3 is started, and the vacuum system 3 judges that the adsorption state of the sucker 1 is normal. The normal wafer can be a true wafer with qualified warping degree in the same batch, and can also be a waste wafer and a false wafer which are specially used for the adsorption method.
And 2, closing the vacuum system 3 after obtaining the normal adsorption state signal sent by the vacuum system 3, and taking down the normal wafer. After the step is carried out, the vacuum system 3 does not detect whether vacuum leakage exists between the suction cup 1 and the wafer any more, even if the vacuum system is turned on after being turned off, the vacuum system 3 still considers that the work flow is not finished, and the wafer on the suction cup 1 is adsorbed by continuously releasing vacuum.
And 3, placing the warped wafer 2 on the sucker 1 to replace the normal wafer.
And 4, starting the vacuum system 3, and horizontally adjusting and/or rotationally adjusting the position of the warped wafer 2 on the chuck 1 until the warped wafer 2 is adsorbed on the chuck 1.
In view of the difficulty for an operator to manually determine which wafers belong to the normal wafers and which wafers belong to the warped wafers 2 in a cassette frame, and even if such manual determination is possible, it is preferable that the following steps are further included before step 1:
step a, normal operation is performed on all wafers (for example, all wafers in a cassette frame), and the wafer in which the suction abnormality is determined by the vacuum system 3 placed on the chuck 1 is classified as the warped wafer 2. The chuck 1 and the vacuum system 3 can automatically screen out the warped wafers 2 without affecting the normal photoetching of normal wafers.
And step B, independently placing all the warped wafers 2 to wait for the second operation. I.e. go to step 1.
In step 4, the horizontal adjustment and/or the rotational adjustment of the warped wafer 2 may be performed manually by an operator, may be performed mechanically by using a robot, a robot arm, or the like, or may be performed in other manners, so that the horizontal position and/or the placement angle of the warped wafer 2 can be conveniently and quickly adjusted.
When the warped wafer 2 is horizontally and/or rotationally adjusted to a certain degree (for example, the photolithographic marks on the wafer deviate from the marks on the photolithographic plate by a certain distance, or the photolithographic marks on the wafer and the marks on the photolithographic plate cannot be overlapped due to an excessively large rotation angle) or the warped wafer 2 cannot be adsorbed on the chuck after a certain time (for example, one minute), the warped wafer 2 is restored to the original position, and then the edge of the warped wafer 2 is pressed to be adsorbed on the chuck 1. That is, when the simple position adjustment or the placing angle adjustment cannot satisfy the requirement, an external force is required to be applied to reduce the warpage of the warped wafer 2.
The specific step of pressing the warped wafer 2 is not limited, and the vacuum system 3 may be assisted to adsorb the warped wafer 2 on the chuck 1. Preferably, pressing the warped wafer 2 comprises the steps of:
and step 61, pressing any side edge of the warped wafer 2 to enable the warped wafer to be adsorbed on the sucker 1. That is, the first pressing point may be selected at will according to the habit of the operator, and the pressing effect is not affected no matter where the selected pressing point is located on the warped wafer 2.
And step 62, pressing the other side edge of the warped wafer 2, which is symmetrical about the circle center, so that the warped wafer is adsorbed on the sucker 1. In other words, the second pressing point and the first pressing point are symmetrical about the center of the wafer, so that the pressing and adsorbing effects are better.
Step 63, checking whether all the warped wafers 2 are adsorbed on the sucking disc 1, if so, turning to step 65; otherwise go to step 64. If the warping on the warped wafer 2 is regular, the warped wafer 2 should be completely adsorbed on the chuck 1 at this time, and the warped wafer 2 does not move any more; if the warp on the warped wafer 2 is irregular, a part of the warp position on the warped wafer 2 will still be raised at this time, and the warped wafer 2 will still be pushed.
And step 64, pressing the still warped parts of the warped wafer 2 in sequence until the warped wafer 2 is completely adsorbed on the chuck 1.
And step 65, ending.
As shown in fig. 2 and 3, the apparatus using the above-described warped wafer suction method includes a chuck 1 connected to a vacuum system 3, the chuck 1 being provided with a plurality of suction holes 11. The vacuum system 3 is provided with a control switch, and the vacuum system 3 is turned off and on by the control switch so as to replace the normal wafer with the warped wafer 2, thereby realizing the adsorption method.
In order to more firmly adsorb the wafer and overcome the deformation of the wafer to a certain extent, a plurality of concentric annular bulges are formed on the sucker 1 from the center to the edge, a concentric annular groove is formed between every two adjacent bulges, and the sucking holes 11 are regularly distributed on one or more bulges; alternatively, as shown in fig. 3, the suction cup 1 has a planar structure, and the plurality of suction holes 11 are regularly distributed on the suction cup 1. Wherein, the regular distribution of the suction holes 11 can be, but not limited to, an equidistant distribution, a gradually decreasing distribution, a gradually increasing distribution, an array distribution, a geometric distribution, a radial distribution, etc.; when the plurality of suction holes 11 are regularly distributed on the sucker 1 having a planar structure, the plurality of suction holes 11 are arranged at a set distance from the central position of the sucker 1, the plurality of suction holes 11 form a circular ring structure around the central position of the sucker 1, and a plurality of concentric circular ring structures are formed when the set distance is a plurality of values.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (5)

1. A method for adsorbing a warped wafer is characterized in that the normal wafer is used for forming a normal adsorption state on a sucker (1), then the warped wafer (2) is used for replacing the normal wafer, and the position of the warped wafer (2) on the sucker (1) is horizontally adjusted and/or rotationally adjusted until the warped wafer (2) is adsorbed on the sucker (1);
the adsorption method comprises the following steps:
step 1, sending a piece of normal wafer to the sucker (1), starting a vacuum system (3), and judging that the adsorption state of the sucker (1) is normal by the vacuum system (3);
step 2, closing the vacuum system (3) after obtaining an adsorption state normal signal sent by the vacuum system (3), and taking down the normal wafer;
step 3, placing the warped wafer (2) on the sucker (1);
and 4, starting a vacuum system (3), and horizontally adjusting and/or rotationally adjusting the position of the warped wafer (2) on the sucker (1) until the warped wafer (2) is adsorbed on the sucker (1).
2. The method for adsorbing the warped wafer according to claim 1, further comprising, before the step 1, the steps of:
step A, carrying out normal operation on all wafers, and classifying the wafers which are placed on the sucking disc (1) and judged to be abnormally adsorbed by the vacuum system (3) into warped wafers (2);
and B, independently placing all the warped wafers (2) to wait for the second operation.
3. Method for adsorbing a warped wafer according to claim 1 or 2, wherein the horizontal adjustment and/or the rotational adjustment of the warped wafer (2) is effected manually or mechanically.
4. Method for clamping warped wafer according to claim 1 or 2, wherein after the warped wafer (2) is horizontally and/or rotationally adjusted to a certain extent or for a certain time without being able to clamp the warped wafer (2) to the chuck, the warped wafer (2) is returned to its original position and then the edge of the warped wafer (2) is pressed to be clamped to the chuck (1).
5. Method for adsorbing a warped wafer according to claim 4, wherein pressing the warped wafer (2) comprises the steps of:
step 61, pressing the edge of any side of the warped wafer (2) to enable the warped wafer to be adsorbed on the sucker (1);
step 62, pressing the edge of the other side of the warped wafer (2) which is symmetrical about the circle center to enable the warped wafer to be adsorbed on the sucker (1);
step 63, checking whether all the warped wafers (2) are adsorbed on the sucking discs (1) or not, and if yes, turning to step 65; otherwise go to step 64;
step 64, pressing the parts, still warped, of the warped wafers (2) in sequence until all the warped wafers (2) are adsorbed on the sucker (1);
and step 65, ending.
CN201611180576.6A 2016-12-19 2016-12-19 Adsorption method of warped wafer and device using same Active CN108206144B (en)

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CN109273399B (en) * 2018-09-28 2023-02-10 上海微松工业自动化有限公司 Leveling and fixing device for 12-inch wafer
CN109244028B (en) * 2018-09-28 2022-11-18 上海微松工业自动化有限公司 Wafer flattening and fixing method
CN109244029B (en) * 2018-09-28 2022-12-02 上海微松工业自动化有限公司 Wafer flattening and fixing device
CN109256356B (en) * 2018-09-28 2023-05-02 上海微松工业自动化有限公司 Wafer leveling and fixing device
CN114864470A (en) * 2022-04-27 2022-08-05 苏州科韵激光科技有限公司 Wafer fixing carrier
CN116103628A (en) * 2023-04-13 2023-05-12 华羿微电子股份有限公司 Wafer evaporation auxiliary loading device
CN117373988B (en) * 2023-11-27 2024-04-16 苏州恩腾半导体科技有限公司 Wafer holding device based on Bernoulli chuck
CN117577598B (en) * 2023-11-30 2024-05-14 之江实验室 Handling device based on-chip processor and handling method thereof

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CN104064508A (en) * 2014-07-08 2014-09-24 上海华力微电子有限公司 Sucker and method for eliminating wafer exposure defocus defects

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