CN104064508A - Sucker and method for eliminating wafer exposure defocus defects - Google Patents
Sucker and method for eliminating wafer exposure defocus defects Download PDFInfo
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- CN104064508A CN104064508A CN201410321501.XA CN201410321501A CN104064508A CN 104064508 A CN104064508 A CN 104064508A CN 201410321501 A CN201410321501 A CN 201410321501A CN 104064508 A CN104064508 A CN 104064508A
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- sucker
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Abstract
The invention provides a sucker and method for eliminating wafer exposure defocus defects. The sucker is flat in upper surface and is used for supporting a wafer. The sucker comprises a plurality of vacuum suction holes and a plurality of thermoelectric couples, the vacuum suction holes are densely distributed in the upper surface of the sucker, all parts of the wafer are absorbed into the same plane by the vacuum suction holes, the thermoelectric couples are densely distributed at the bottom of the sucker, the thermoelectric couples and the vacuum suction holes are alternatively arranged, and the thermoelectric couples are used for heating the wafer. By means of the sucker and method, the thermoelectric couples densely distributed at the bottom of the sucker and the vacuum suction holes densely distributed in the upper surface of the sucker are arranged, the upper surface of the sucker is flat, stress in the wafer is slowly released in the heating process, vacuum suction force, acting on the wafer, of the vacuum suction holes enables the wafer to be attached to the flat upper surface of the sucker, buckling deformation defects of the wafer are accordingly reduced, the surface of the wafer is flattened, the defocus defects in the exposure process are further eliminated, and the exposure quality and the product yield are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of method of eliminating the sucker of exposing wafer defect out of focus and eliminating exposing wafer defect out of focus.
Background technology
In semiconductor fabrication, after having experienced multiple tracks manufacturing process, on wafer, can inevitably accumulate a large amount of stress, cause silicon wafer warpage distortion.As shown in Figure 1, be the poor schematic diagram of the test height of wafer, in Fig. 1, dark color represents warpage up or down, the larger expression distortion of numeral is larger.Silicon wafer warpage is out of shape, and will have influence on the quality of exposure technology.Specifically, exposure sources can not all compensate focusing depth of focus, makes to expose out of focus, and as shown in Figure 2, Fig. 2 is the exposure schematic diagram that wafer has defect out of focus, and in Fig. 2, the black region that white dashed line frame is lived represents defect out of focus.The exposure figure that will cause out of focus that exposes collapses, and causes circuit malfunction.
In exposure technology, conventionally wafer is positioned on sucker, by the vacuum sucker on sucker, adsorb and fix, and then carry out exposure process.Patent publication No. is that the patent of CN 103367217A discloses a kind of silicon chip adsorbent equipment and adsorption method thereof, although having vacuum sucker on this sucker can adsorb wafer, at wafer, there is not the requirement that buckling deformation or buckling deformation can meet fixing wafer less in the situation that and improve silicon wafer warpage distortion, but, for the comparatively serious situation of buckling deformation, the simple gas clean-up that relies on increases the mechanical force putting on wafer, can cause because strength is excessive the fracture of wafer, reduce product yield; Under the conditional condition of gas clean-up, can not eliminate silicon wafer warpage deformation defect completely, therefore, the defect out of focus of exposing still can exist.
Summary of the invention
In order to overcome above problem, the object of this invention is to provide a kind of sucker and method of eliminating exposing wafer defect out of focus, by the thermocouple that high density distributes being set in sucker bottom, and at sucker upper surface, the vacuum sucker that high density distributes is set, in the heating process of thermocouple, vacuum sucker is close to sucker upper surface by vacuum suction by wafer, thereby eliminates silicon wafer warpage distortion.
To achieve these goals, technical scheme of the present invention is as follows:
The invention provides a kind of sucker of eliminating exposing wafer defect out of focus, it has smooth upper surface, for supporting wafer; Wherein, described sucker comprises:
A plurality of vacuum suckers, dense distribution is in described sucker upper surface, for each position of described wafer is adsorbed in same plane;
A plurality of thermocouples, dense distribution is in described sucker bottom, and with the alternate setting of described vacuum sucker, for heating described wafer.
Preferably, described a plurality of vacuum suckers, dense distribution is in described sucker upper surface, and take on the concentric circles that the center of described sucker is the center of circle; Described a plurality of thermocouple, dense distribution is in described sucker bottom, and take on the concentric circles that the center of described sucker is the center of circle.
Preferably, the spacing between described vacuum sucker is not more than 1mm.
Preferably, the spacing between described thermocouple is not more than 10mm.
Preferably, the difference in height of each position of the upper surface of described sucker is not more than 100nm.
To achieve these goals, the present invention also provides a kind of method of eliminating exposing wafer defect out of focus, comprises successively and carrying out: wafer is positioned over to sucker upper surface; Described wafer is carried out to planarization; Described wafer is carried out to exposure technology; Wherein, the method for described wafer being carried out to planarization comprises: utilize thermocouple to heat described wafer, meanwhile, utilize vacuum sucker to apply pull of vacuum to described wafer, thereby complete the planarization of described wafer.
Preferably, the planarization method of described wafer, specifically comprises:
Within the identical time, utilize thermocouple to the heating that heats up of described wafer, meanwhile, by vacuum sucker, progressively increase the pull of vacuum to described wafer;
Within the identical time, utilize described thermocouple to carry out heated at constant temperature to described wafer, meanwhile, by described vacuum sucker, described wafer is applied to constant vacuum suction;
Utilize described thermocouple to carry out temperature-fall period to described wafer, until to room temperature; Wherein, described thermocouple progressively reduces the heating-up temperature of described wafer;
By described vacuum sucker, progressively reduce the pull of vacuum to described wafer again, until described wafer discharges from described sucker, thereby complete the planarization of described wafer.
Preferably, the temperature of described heated at constant temperature is 120～200 ℃, 80～90kpa of described constant vacuum suction, and the time of described heated at constant temperature is 30～40s.
Preferably, the time of described intensification heating is 2～3s, and advancing the speed of described pull of vacuum is 30～40kpa/s.
Preferably, the time of described temperature-fall period is 2～3s, and the changing down of described pull of vacuum is 30～40kpa/s.
Sucker and the method for elimination exposing wafer of the present invention defect out of focus, in sucker bottom, the thermocouple that high density distributes is set, and at sucker upper surface, the vacuum sucker that high density distributes is set, coordinate again the upper surface that sucker is smooth, pass through heating process, stress in wafer is slowly discharged, and the active force that the absorption that coordinates vacuum sucker produces makes wafer be close to the upper surface that sucker is smooth, thereby reduce and eliminate silicon wafer warpage deformation position, make flattening wafer surface, eliminate the defect out of focus in exposure process, improved exposure quality and product yield.
Accompanying drawing explanation
Fig. 1 is the poor schematic diagram of the test height of wafer
Fig. 2 is the exposure schematic diagram that wafer has defect out of focus
Fig. 3 is the structural representation of the sucker of a preferred embodiment of the present invention
Fig. 4 is the schematic flow sheet of the method for elimination exposing wafer of the present invention defect out of focus
Fig. 5 is the schematic flow sheet of the method processed of the wafer planarizationization of a preferred embodiment of the present invention
Fig. 6 be in the process processed of the wafer planarizationization of a preferred embodiment of the present invention time and temperature be related to schematic diagram
Fig. 7 is the poor schematic diagram of test height of wafer after planarization of the present invention
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
As previously mentioned, buckling deformation due to wafer, can cause and in exposure process, occur defect out of focus, and existing method, be that the simple vacuum degree of passing through increase vacuum sucker comes the power of increasing action on wafer to reduce its distortion, because the power putting on wafer can not unconfinedly increase, so, in the situation that silicon wafer warpage distortion is more serious, by increasing the method for vacuum sucker vacuum degree, still silicon wafer warpage deformation defect can not be eliminated merely, thereby the defect out of focus in exposure process can not be eliminated.For this reason, the present invention has improved the sucker structure adopting in existing exposure process, by the thermocouple that high density distributes being set in sucker bottom, and at sucker upper surface, the vacuum sucker that high density distributes is set, thereby when applying pull of vacuum, employing heats wafer, wafer is in being subject to thermal process, and stress slowly discharges, thereby reaches the object of eliminating silicon wafer warpage distortion.
Below with reference to accompanying drawing 3 and specific embodiment, the sucker of elimination exposing wafer of the present invention defect out of focus is described in further detail.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Referring to Fig. 3, is the structural representation of the sucker of a preferred embodiment of the present invention, and sucker 00 of the present invention, has smooth upper surface 1, for supporting wafer; A plurality of vacuum suckers 2 and a plurality of thermocouple 3;
A plurality of vacuum suckers 2, dense distribution is in sucker upper surface 1, for each position of wafer is adsorbed in same plane; In order to make each position of wafer all be subject to pull of vacuum and be close to sucker upper surface 1 as far as possible, increased the density that vacuum sucker 2 distributes on sucker 00, make vacuum sucker 2 high density be distributed in sucker upper surface 1, thereby wafer is formed to a face suction-operated, make wafer be close to sucker upper surface 1.Because sucker upper surface 1 is comparatively smooth, be close to like this sucker upper surface 1 and be equivalent to silicon wafer warpage position to produce extruding, thereby eliminate its buckling deformation defect.Dense distribution is exactly that requirement has higher density, and in one embodiment of the invention, the spacing between vacuum sucker is not more than 1mm.
In a preferred embodiment of the present invention, vacuum sucker, dense distribution is in sucker upper surface, and take on the concentric circles that the center of sucker is the center of circle.In order to make vacuum sucker present high density, distribute, preferably, the spacing between this concentric circles is not more than 1mm.
It should be noted that, the shape of vacuum sucker 2 can have any shape, such as, circle, ellipse, triangle, regular polygon, flower shape etc., the present invention is not restricted this.
A plurality of thermocouples 3, dense distribution is in sucker 00 bottom, and setting alternate with vacuum sucker 2, for heating wafer; In order to make being heated evenly on wafer as far as possible, reduce the stress in wafer, in sucker 00 bottom, be provided with the thermocouple 3 that high density distributes; And in order not affect setting and the work of vacuum sucker 2, thermocouple 3 should distribute alternately with vacuum sucker 2, that is to say and reach the effect that the distributing position of thermocouple 3 and vacuum sucker 2 is independent of each other; In order to realize high density, distribute, in a preferred embodiment of the present invention, the spacing between thermocouple is not more than 10mm.
In a preferred embodiment of the present invention, thermocouple 3 dense distribution are in sucker bottom, and take on the concentric circles that the center of sucker is the center of circle.For thermocouple 3 high density are distributed, preferably, the spacing between this concentric circles is not more than 10mm.
In order further to reach, eliminate silicon wafer warpage deformation defect, improve the object of wafer planarization degree, can make sucker upper surface there is very high flatness, at wafer, be close in the process of sucker upper surface, utilize the high flat degree of sucker upper surface to improve the degree of absorption of vacuum sucker to wafer, further increase the improvement condition to silicon wafer warpage distortion.Therefore, the difference in height of each position of sucker upper surface should be the smaller the better, and in a preferred embodiment of the present invention, the difference in height of each position of the upper surface of sucker is not more than 100nm, for example, can be 50nm, even 10nm.The method that makes sucker upper surface have so high flatness can have a variety of, such as, in making the process of sucker upper surface, at the nano level alloy firm of sucker upper surface deposition one deck, this kind of alloy firm can adopt existing technique to prepare, such as, the modes such as magnetron sputtering, because those of ordinary skill in the art can know the preparation method of nanoscale alloy firm, the present invention repeats no more this.Therefore, in the present invention, the sucker with very smooth upper surface can be realized, thereby sucker of the present invention can be higher than existing sucker to the degree of absorption of wafer.
Below in conjunction with accompanying drawing 4 and Fig. 5 and specific embodiment, the method for elimination exposing wafer of the present invention defect out of focus is described in further detail.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Referring to Fig. 4, is the schematic flow sheet of the method for elimination exposing wafer of the present invention defect out of focus, and the method for elimination exposing wafer of the present invention defect out of focus, comprises the following steps:
Step S01: wafer is positioned over to sucker upper surface;
Concrete, in a preferred embodiment of the present invention, can utilize manipulator wafer to be placed on to the upper surface of sucker.
Step S02: wafer is carried out to planarization;
As previously mentioned, for fear of produce defect out of focus in exposure process, just need to eliminate silicon wafer warpage deformation defect, make wafer be tending towards smooth, therefore, before exposure, need wafer to carry out planarization.
Concrete, in the present invention, wafer is carried out to the method for planarization, comprising: utilize thermocouple to heat wafer, meanwhile, utilize vacuum sucker to apply pull of vacuum to wafer, thereby complete the planarization of wafer.In heating process, the stress of inside wafer can be discharged, then coordinates the physical force of pull of vacuum, makes wafer be close to sucker upper surface, thereby reduces and eliminate the defect of silicon wafer warpage distortion.
Step S03: wafer is carried out to exposure technology;
Because those of ordinary skill in the art can know existing process of wafer being carried out to exposure technology, the present invention repeats no more this.
In a preferred embodiment of the present invention, refer to Fig. 5 and Fig. 6, the schematic flow sheet of the method for processing for the wafer planarizationization of a preferred embodiment of the present invention, Fig. 6 be in the process processed of the wafer planarizationization of a preferred embodiment of the present invention time and temperature be related to schematic diagram; Planarization method to wafer in the present embodiment, can comprise the following steps:
Steps A 01: within the identical time, utilize thermocouple to the wafer heating that heats up, meanwhile, progressively increase the pull of vacuum to wafer by vacuum sucker;
Here, the process of heating and increase pull of vacuum is carried out simultaneously, can setting-up time t1 it be the heating-up time, in t1, with certain heating rate, wafer is heated, heating rate can be set according to the required heating-up temperature reaching, and increases pull of vacuum with certain speed simultaneously, can improve pull of vacuum by increasing the vacuum degree extracting, advancing the speed of pull of vacuum can be set according to the required pull of vacuum reaching.In this preferred embodiment of the present invention, time t1 can be 2～3s, and advancing the speed of pull of vacuum can be 30～40kpa/s.
Steps A 02: within the identical time, utilize thermocouple to carry out heated at constant temperature to wafer, meanwhile, by vacuum sucker, wafer is applied to constant vacuum suction;
Here, heated at constant temperature and apply constant vacuum suction and carry out simultaneously, after above-mentioned time t1 finishes, enter heated at constant temperature process, simultaneously pull of vacuum remains unchanged, can setting-up time t2 be heated at constant temperature time, in heated at constant temperature process, along with the prolongation of time, the stress in wafer is slowly discharged, and last stress substantially discharges all and discharges; In the process of Stress Release, add pull of vacuum and act on wafer, make wafer be close to sucker upper surface, and sucker upper surface also produces active force to wafer, the buckling deformation of wafer is reduced, finally eliminate silicon wafer warpage distortion, make wafer area planarization.In this preferred embodiment of the present invention, the temperature of heated at constant temperature can be 120～200C, and constant vacuum suction can be 80～90kpa, and the heated at constant temperature time can be 30～40S.
Steps A 03: utilize thermocouple to carry out temperature-fall period to wafer, until to room temperature;
Here, after wafer distortion eliminates, room temperature reduces gradually heating-up temperature, until can setting-up time t3 be temperature fall time, at t3 in the time, thermocouple progressively reduces the heating-up temperature of wafer, and such as at the uniform velocity reduction or speed change reduction etc., wafer is along with heating-up temperature reduces, the temperature of itself is also reducing gradually, until room temperature; Because unexpected reduction temperature can cause inside wafer stress to increase or fracture, therefore, in the present embodiment, adopt the progressively mode of cooling, preferably, temperature fall time can be 2～3s, the changing down of pull of vacuum is 30～40kpa/s.
Steps A 04: progressively reduce the pull of vacuum to wafer by vacuum sucker again, until wafer discharges from sucker, thereby complete the planarization of wafer.
Here, if sharply reduce pull of vacuum, can cause moment to be subject to force unbalance to wafer, make wafer fly away from sucker or other damage, therefore, need to progressively reduce pull of vacuum, make wafer gently from sucker, discharge and come.
Refer to Fig. 6, Fig. 6 is the exposure schematic diagram of wafer after planarization of the present invention; Can see, adopt sucker of the present invention and method to carry out the wafer after planarization, eliminate exposure defect out of focus, thereby improved exposure quality and yield.
In sum, sucker and the method for elimination exposing wafer of the present invention defect out of focus, in sucker bottom, the thermocouple that high density distributes is set, and at sucker upper surface, the vacuum sucker that high density distributes is set, coordinate again the upper surface that sucker is smooth, pass through heating process, stress in wafer is slowly discharged, and the active force that the absorption that coordinates vacuum sucker produces makes wafer be close to the upper surface that sucker is smooth, thereby reduce and eliminate silicon wafer warpage deformation position, make flattening wafer surface, eliminated the defect out of focus in exposure process, exposure quality and product yield have been improved.
Although the present invention discloses as above with preferred embodiment; right described embodiment only gives an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. eliminate a sucker for exposing wafer defect out of focus, it has smooth upper surface, for supporting wafer; It is characterized in that, described sucker comprises:
A plurality of vacuum suckers, dense distribution is in described sucker upper surface, for each position of described wafer is adsorbed in same plane;
A plurality of thermocouples, dense distribution is in described sucker bottom, and with the alternate setting of described vacuum sucker, for heating described wafer.
2. the sucker of elimination exposing wafer according to claim 1 defect out of focus, is characterized in that,
Described a plurality of vacuum sucker, dense distribution is in described sucker upper surface and take on the concentric circles that the center of described sucker is the center of circle;
Described a plurality of thermocouple, dense distribution is in described sucker bottom and take on the concentric circles that the center of described sucker is the center of circle.
3. the sucker of elimination exposing wafer according to claim 1 defect out of focus, is characterized in that, the spacing between described vacuum sucker is not more than 1mm.
4. the sucker of elimination exposing wafer according to claim 1 defect out of focus, is characterized in that, the spacing between described thermocouple is not more than 10mm.
5. the sucker of elimination exposing wafer according to claim 1 defect out of focus, is characterized in that, the difference in height of each position of the upper surface of described sucker is not more than 100nm.
6. a method of eliminating exposing wafer defect out of focus, is characterized in that, comprises successively and carrying out:
Wafer is positioned over to sucker upper surface;
Described wafer is carried out to planarization;
Described wafer is carried out to exposure technology; Wherein,
The method of described wafer being carried out to planarization comprises:
Utilize thermocouple to heat described wafer, meanwhile, utilize vacuum sucker to apply pull of vacuum to described wafer, thereby complete the planarization of described wafer.
7. the method for elimination exposing wafer according to claim 6 defect out of focus, is characterized in that, the planarization method of described wafer, specifically comprises:
Within the identical time, utilize thermocouple to the heating that heats up of described wafer, meanwhile, by vacuum sucker, progressively increase the pull of vacuum to described wafer;
Within the identical time, utilize described thermocouple to carry out heated at constant temperature to described wafer, meanwhile, by described vacuum sucker, described wafer is applied to constant vacuum suction;
Utilize described thermocouple to carry out temperature-fall period to described wafer, until to room temperature; Wherein, described thermocouple progressively reduces the heating-up temperature of described wafer;
By described vacuum sucker, progressively reduce the pull of vacuum to described wafer again, until described wafer discharges from described sucker, thereby complete the planarization of described wafer.
8. the method for elimination exposing wafer according to claim 7 defect out of focus, is characterized in that, the temperature of described heated at constant temperature is 120～200 ℃, 80～90kpa of described constant vacuum suction, and the time of described heated at constant temperature is 30～40s.
9. the method for elimination exposing wafer according to claim 7 defect out of focus, is characterized in that, the time of described intensification heating is 2～3s, and advancing the speed of described pull of vacuum is 30～40kpa/s.
10. the method for elimination exposing wafer according to claim 7 defect out of focus, is characterized in that, the time of described temperature-fall period is 2～3s, and the changing down of described pull of vacuum is 30～40kpa/s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108206144A (en) * | 2016-12-19 | 2018-06-26 | 苏州能讯高能半导体有限公司 | The adsorption method of warpage wafer and the device using the adsorption method |
| CN108511312A (en) * | 2018-03-29 | 2018-09-07 | 长江存储科技有限责任公司 | Wafer bonding plasma processing apparatus |
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
| CN112420591A (en) * | 2019-08-20 | 2021-02-26 | 长鑫存储技术有限公司 | Heating plate and method for controlling surface temperature of wafer |
| CN112439998A (en) * | 2020-10-30 | 2021-03-05 | 松山湖材料实验室 | Low-flatness wafer laser processing adsorption device and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758191A (en) * | 1993-08-13 | 1995-03-03 | Toshiba Corp | Wafer stage device |
| JP3877157B2 (en) * | 2002-09-24 | 2007-02-07 | 東京エレクトロン株式会社 | Substrate processing equipment |
| CN103367217B (en) * | 2012-04-11 | 2016-08-24 | 上海微电子装备有限公司 | A kind of silicon-chip absorption device and absorption method thereof |
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2014
- 2014-07-08 CN CN201410321501.XA patent/CN104064508B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108206144A (en) * | 2016-12-19 | 2018-06-26 | 苏州能讯高能半导体有限公司 | The adsorption method of warpage wafer and the device using the adsorption method |
| CN108206144B (en) * | 2016-12-19 | 2021-02-02 | 苏州能讯高能半导体有限公司 | Adsorption method of warped wafer and device using same |
| CN108511312A (en) * | 2018-03-29 | 2018-09-07 | 长江存储科技有限责任公司 | Wafer bonding plasma processing apparatus |
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
| CN112420591A (en) * | 2019-08-20 | 2021-02-26 | 长鑫存储技术有限公司 | Heating plate and method for controlling surface temperature of wafer |
| CN112420591B (en) * | 2019-08-20 | 2022-06-10 | 长鑫存储技术有限公司 | Heating plate and method for controlling surface temperature of wafer |
| CN112439998A (en) * | 2020-10-30 | 2021-03-05 | 松山湖材料实验室 | Low-flatness wafer laser processing adsorption device and method thereof |
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| CN104064508B (en) | 2017-07-25 |
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