TW202331879A - Wafer chuck for improving warpage problem - Google Patents
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- 230000002093 peripheral effect Effects 0.000 claims description 137
- 210000000056 organ Anatomy 0.000 claims description 13
- 239000002216 antistatic agent Substances 0.000 claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229920001971 elastomer Polymers 0.000 claims description 7
- 229920002379 silicone rubber Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000741 silica gel Substances 0.000 claims 1
- 229910002027 silica gel Inorganic materials 0.000 claims 1
- 241000252254 Catostomidae Species 0.000 abstract 15
- 235000012431 wafers Nutrition 0.000 description 88
- 238000005192 partition Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 206010011469 Crying Diseases 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
Description
本發明是關於一種晶圓載板,特別是關於一種改善翹曲問題的晶圓載板。The present invention relates to a wafer carrier, in particular to a wafer carrier which improves warpage.
在晶圓的封裝製程中,除了晶圓本身自然翹曲外,可能因不同膨脹係數的晶圓堆疊而產生翹曲,或是與電路板結合時亦可能產生翹曲,若晶圓的翹曲弧度過大,將會對後續製程的良率造成影響。In the wafer packaging process, in addition to the natural warping of the wafer itself, warping may occur due to the stacking of wafers with different expansion coefficients, or warping may also occur when it is combined with a circuit board. If the warping of the wafer If the arc is too large, it will affect the yield rate of the subsequent process.
有鑑於此,開發一種改善翹曲問題的晶圓載板遂成相關業者值得研發之目標。In view of this, the development of a wafer carrier that improves the warpage problem has become a worthwhile research and development goal for related companies.
因此,本發明之目的在於提供一種改善翹曲問題的晶圓載板,其藉由中心吸嘴、中央吸嘴及周邊吸嘴的高度差異,製造晶圓不同區塊被吸附的時間差,將晶圓恢復平整。Therefore, the object of the present invention is to provide a wafer carrier that improves the warpage problem. By using the height difference of the central suction nozzle, the central suction nozzle, and the surrounding suction nozzles, the difference in the time when different blocks of the wafer are sucked is produced, and the wafer Return to level.
依據本發明的結構態樣之一實施方式提供一種改善翹曲問題的晶圓載板,包含一載板主體、複數中心吸嘴、複數中央吸嘴及複數周邊吸嘴。載板主體包含一中心區、一中央區、一周邊區、複數中心通孔、複數中央通孔及複數周邊通孔。中央區環繞中心區;周邊區環繞中央區。此些中心通孔位於中心區;此些中央通孔位於中央區;此些周邊通孔位於周邊區。此些中心吸嘴分別穿設於此些中心通孔,各中心吸嘴與載板主體之間具有一中心吸嘴高度差。此些中央吸嘴分別穿設於此些中央通孔,各中央吸嘴與載板主體之間具有一中央吸嘴高度差。此些周邊吸嘴分別穿設於此些周邊通孔,各周邊吸嘴與載板主體之間具有一周邊吸嘴高度差。其中,中心吸嘴高度差高於中央吸嘴高度差,且中央吸嘴高度差高於周邊吸嘴高度差。According to one embodiment of the structural aspect of the present invention, a wafer carrier for improving the warpage problem is provided, including a carrier body, a plurality of central nozzles, a plurality of central nozzles, and a plurality of peripheral nozzles. The carrier body includes a central area, a central area, a peripheral area, a plurality of central through holes, a plurality of central through holes and a plurality of peripheral through holes. The central area surrounds the central area; the peripheral area surrounds the central area. The central vias are located in the central area; the central vias are located in the central area; and the peripheral vias are located in the peripheral area. The central suction nozzles are respectively disposed through the central through holes, and there is a height difference between each central suction nozzle and the main body of the carrier board. The central suction nozzles are respectively disposed through the central through holes, and there is a height difference between each central suction nozzle and the main body of the carrier board. The peripheral suction nozzles are respectively disposed through the peripheral through holes, and there is a peripheral suction nozzle height difference between each peripheral suction nozzle and the main body of the carrier board. Wherein, the height difference of the central suction nozzle is higher than the height difference of the central suction nozzle, and the height difference of the central suction nozzle is higher than the height difference of the peripheral suction nozzles.
藉此,本發明的改善翹曲問題的晶圓載板藉由中心吸嘴、中央吸嘴及周邊吸嘴與載板主體之間的高度差異,製造晶圓被吸嘴吸附的時間差,進而消除晶圓的翹曲弧度。In this way, the wafer carrier of the present invention that improves the warping problem utilizes the height difference between the central nozzle, the central nozzle, and the surrounding nozzles and the main body of the carrier to create a time difference for the wafer to be sucked by the nozzle, thereby eliminating the The warping arc of the circle.
前述實施方式之其他實施例如下:前述此些中心吸嘴、此些中央吸嘴及此些周邊吸嘴皆由一抗靜電材質製成,抗靜電材質係為橡膠及矽膠之其中一者摻雜碳。Other examples of the above-mentioned embodiment are as follows: the above-mentioned central suction nozzles, these central suction nozzles and these peripheral suction nozzles are all made of an antistatic material, and the antistatic material is doped with one of rubber and silicon rubber carbon.
前述實施方式之其他實施例如下:前述此些中心吸嘴之任一者為一三折式風琴吸嘴,此些中央吸嘴及此些周邊吸嘴之任一者為一二折式風琴吸嘴。Other examples of the foregoing embodiments are as follows: any one of the aforementioned central suction nozzles is a three-fold organ suction nozzle, and any one of these central suction nozzles and these peripheral suction nozzles is a two-fold organ suction nozzle Mouth.
前述實施方式之其他實施例如下:前述各中心吸嘴包含一中心吸附盤部,中心吸附盤部具有一第一厚度。各周邊吸嘴包含一周邊吸附盤部,周邊吸附盤部具有一第二厚度。其中,第一厚度大於第二厚度。Other examples of the aforementioned embodiment are as follows: each of the aforementioned central suction nozzles includes a central suction plate portion, and the central suction plate portion has a first thickness. Each peripheral suction nozzle includes a peripheral suction plate portion, and the peripheral suction plate portion has a second thickness. Wherein, the first thickness is greater than the second thickness.
前述實施方式之其他實施例如下:前述改善翹曲問題的晶圓載板更包含一分區控制器。分區控制器連接此些中心吸嘴、此些中央吸嘴及此些周邊吸嘴,並分別對中心區之此些中心吸嘴、中央區之此些中央吸嘴及周邊區之此些周邊吸嘴之複數吸附狀態進行分區控制。Other examples of the above-mentioned embodiments are as follows: the above-mentioned wafer carrier for improving the warpage problem further includes a partition controller. The partition controller connects these central suction nozzles, these central suction nozzles and these peripheral suction nozzles, and controls these central suction nozzles in the central area, these central suction nozzles in the central area and these peripheral suction nozzles in the peripheral area respectively. The multiple adsorption states of the mouth are controlled by zones.
前述實施方式之其他實施例如下:前述周邊區之此些周邊通孔之數量大於中央區之此些中央通孔之數量。Other examples of the aforementioned embodiment are as follows: the number of the peripheral through holes in the aforementioned peripheral area is greater than the number of the central through holes in the central area.
依據本發明的結構態樣之一實施方式提供一種改善翹曲問題的晶圓載板,包含一載板主體、複數中央吸嘴及複數周邊吸嘴。載板主體包含一中央區、一周邊區、複數中央通孔及複數周邊通孔。中央區具有一中心。周邊區較中央區遠離中心。此些中央通孔間隔環狀排列於中央區;此些周邊通孔間隔環狀排列於周邊區。此些中央吸嘴分別穿設於此些中央通孔,各中央吸嘴與載板主體之間具有一中央吸嘴高度差。此些周邊吸嘴分別穿設於此些周邊通孔,各周邊吸嘴與載板主體之間具有一周邊吸嘴高度差。其中,中央吸嘴高度差高於周邊吸嘴高度差。According to one embodiment of the structural aspect of the present invention, a wafer carrier with improved warpage problem is provided, which includes a carrier body, a plurality of central suction nozzles and a plurality of peripheral suction nozzles. The carrier body includes a central area, a peripheral area, a plurality of central through holes and a plurality of peripheral through holes. The central area has a center. The peripheral area is farther from the center than the central area. The central through-holes are arranged in the central area in a ring at intervals; the peripheral through-holes are arranged in a ring at intervals in the peripheral area. The central suction nozzles are respectively disposed through the central through holes, and there is a height difference between each central suction nozzle and the main body of the carrier board. The peripheral suction nozzles are respectively disposed through the peripheral through holes, and there is a peripheral suction nozzle height difference between each peripheral suction nozzle and the main body of the carrier board. Wherein, the height difference of the central suction nozzle is higher than that of the surrounding suction nozzles.
藉此,本發明的改善翹曲問題的晶圓載板藉由中央吸嘴及周邊吸嘴與載板主體之間的高度差異,製造晶圓被吸嘴吸附的時間差,進而消除翹曲弧度。Thereby, the wafer carrier for improving the warping problem of the present invention uses the difference in height between the central nozzle and peripheral nozzles and the main body of the carrier to create a time difference for the wafer to be sucked by the nozzles, thereby eliminating warpage.
前述實施方式之其他實施例如下:前述此些中央吸嘴及此些周邊吸嘴皆由一抗靜電材質製成,抗靜電材質係為橡膠及矽膠之其中一者摻雜碳。Other examples of the aforementioned embodiment are as follows: the aforementioned central suction nozzles and the peripheral suction nozzles are all made of an antistatic material, and the antistatic material is one of rubber and silicon rubber doped with carbon.
前述實施方式之其他實施例如下:前述中央吸嘴及此些周邊吸嘴之任一者為一二折式風琴吸嘴。Other examples of the above-mentioned embodiment are as follows: any one of the above-mentioned central suction nozzle and these peripheral suction nozzles is a two-fold organ suction nozzle.
前述實施方式之其他實施例如下:前述改善翹曲問題的晶圓載板更包含一分區控制器。分區控制器連接此些中央吸嘴及此些周邊吸嘴,並分別對中央區之此些中央吸嘴及周邊區之此些周邊吸嘴之複數吸附狀態進行分區控制。Other examples of the above-mentioned embodiments are as follows: the above-mentioned wafer carrier for improving the warpage problem further includes a partition controller. The zone controller is connected to the central nozzles and the peripheral nozzles, and performs zone control on the multiple suction states of the central nozzles in the central area and the peripheral nozzles in the peripheral area.
以下將參照圖式說明本發明之複數個實施例。為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施例中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之;並且重複之元件將可能使用相同的編號表示之。Several embodiments of the present invention will be described below with reference to the drawings. For the sake of clarity, many practical details are included in the following narrative. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some commonly used structures and elements will be shown in a simple and schematic way in the drawings; and repeated elements may be denoted by the same reference numerals.
此外,本文中當某一元件(或單元或模組等)「連接」於另一元件,可指所述元件是直接連接於另一元件,亦可指某一元件是間接連接於另一元件,意即,有其他元件介於所述元件及另一元件之間。而當有明示某一元件是「直接連接」於另一元件時,才表示沒有其他元件介於所述元件及另一元件之間。而第一、第二、第三等用語只是用來描述不同元件,而對元件本身並無限制,因此,第一元件亦可改稱為第二元件。且本文中之元件/單元/電路之組合非此領域中之一般周知、常規或習知之組合,不能以元件/單元/電路本身是否為習知,來判定其組合關係是否容易被技術領域中之通常知識者輕易完成。In addition, when a certain element (or unit or module, etc.) is "connected" to another element herein, it may mean that the element is directly connected to another element, or it may mean that a certain element is indirectly connected to another element , that is, there are other elements interposed between the element and another element. And when it is stated that an element is "directly connected" to another element, it means that there is no other element interposed between the element and another element. The terms first, second, third, etc. are used to describe different components, and have no limitation on the components themselves. Therefore, the first component can also be called the second component. Moreover, the combination of components/units/circuits in this article is not a combination that is generally known, conventional or conventional in this field. Whether the components/units/circuits themselves are known or not can be used to determine whether the combination relationship is easily recognized by those in the technical field. Usually knowledgeable people do it easily.
請參閱第1圖至第2圖,第1圖係繪示本發明之第一實施例之改善翹曲問題的晶圓載板100的立體圖。第2圖係繪示依照第1圖之改善翹曲問題的晶圓載板100的剖視示意圖。改善翹曲問題的晶圓載板100包含一載板主體120、複數中心吸嘴140、複數中央吸嘴150及複數周邊吸嘴160。載板主體120包含一中心區121、一中央區122、一周邊區123、複數中心通孔124、複數中央通孔125及複數周邊通孔126。中央區122環繞中心區121;周邊區123環繞中央區122。此些中心通孔124位於中心區121;此些中央通孔125位於中央區122;此些周邊通孔126位於周邊區123。此些中心吸嘴140分別穿設於此些中心通孔124,各中心吸嘴140與載板主體120之間具有一中心吸嘴高度差H1。此些中央吸嘴150分別穿設於此些中央通孔125,各中央吸嘴150與載板主體120之間具有一中央吸嘴高度差H2。此些周邊吸嘴160分別穿設於此些周邊通孔126,各周邊吸嘴160與載板主體120之間具有一周邊吸嘴高度差H3。其中,中心吸嘴高度差H1高於中央吸嘴高度差H2,且中央吸嘴高度差H2高於周邊吸嘴高度差H3。藉此,本發明的改善翹曲問題的晶圓載板100藉由中心吸嘴140、中央吸嘴150及周邊吸嘴160與載板主體120之間的高度差異,製造晶圓10被中心吸嘴140、中央吸嘴150及周邊吸嘴160吸附的時間差,進而消除晶圓10的翹曲弧度。Please refer to FIG. 1 to FIG. 2 . FIG. 1 is a perspective view of a
詳細地說,當晶圓10放置於改善翹曲問題的晶圓載板100時,改善翹曲問題的晶圓載板100之中心區121、中央區122及周邊區123分別對應晶圓10之區塊10a、10b及10c。晶圓10的翹曲問題主要為哭臉翹曲(區塊10a高於區塊10c)及笑臉翹曲(區塊10a低於區塊10c)。當哭臉翹曲發生時,晶圓10的區塊10a的翹曲弧度大於區塊10b,區塊10b的翹曲弧度大於區塊10c,如第2圖所示。由於中心吸嘴高度差H1、中央吸嘴高度差H2及周邊吸嘴高度差H3呈遞減,當晶圓10放置於改善翹曲問題的晶圓載板100上時,最高的中心吸嘴140首先接觸翹曲弧度最大的區塊10a,並形成真空狀態,進而削減區塊10a的翹曲弧度;而後中央吸嘴150吸附翹曲弧度第二大的區塊10b,削減區塊10b的翹曲弧度;周邊吸嘴160則最晚吸附翹曲弧度最小的區塊10c,進而使晶圓10呈平整狀。當晶圓10呈笑臉翹曲時,改善翹曲問題的晶圓載板100之工作原理與哭臉翹曲發生時相同,在此不再贅述。In detail, when the
周邊區123之此些周邊通孔126之數量大於中央區122之此些中央通孔125之數量。具體而言,由於周邊區123、中央區122及中心區121的面積呈遞減,為使晶圓10之區塊10c能被均勻吸附,周邊通孔126及周邊吸嘴160的數量大於中央通孔125及中央吸嘴150的數量。在本實施方式中,中央吸嘴150及周邊吸嘴160分別環狀間隔排列於中央區122及周邊區123,中心吸嘴140的數量為至少三個,中心區121及中央區122的形狀與8吋晶圓相符,載板主體120的形狀及尺寸與12吋晶圓相符。此外,由於晶圓10發生翹曲時,晶圓10的最高點及最低點之間的高度差如果小於等於8mm,中心吸嘴高度差H1與周邊吸嘴高度差H3之高度差異需大於等於8mm。在一實施例中,中心吸嘴140與載板主體120之間的中心吸嘴高度差H1可為9.49mm;中央吸嘴150與載板主體120之間的中央吸嘴高度差H2可為6.57mm;周邊吸嘴160與載板主體120之間的周邊吸嘴高度差H3可為5.07mm,但本發明不以此為限。藉此,本發明之改善翹曲問題的晶圓載板100可對具有高達4mm翹曲問題的8吋晶圓及12吋晶圓進行改善。The number of the peripheral through
請參閱第2圖至第4圖,第3圖係繪示依照第1圖之改善翹曲問題的晶圓載板100的中心吸嘴140的剖視圖。第4圖係繪示依照第1圖之改善翹曲問題的晶圓載板100的周邊吸嘴160的剖視圖。此些中心吸嘴140、此些中央吸嘴150及此些周邊吸嘴160皆由一抗靜電材質製成。抗靜電材質可為橡膠及矽膠之其中一者摻雜碳,即橡膠摻雜碳或矽膠摻雜碳,但本發明不以此為限。此些中心吸嘴140之任一者為一三折式風琴吸嘴,如第3圖所示;而此些中央吸嘴150及此些周邊吸嘴160之任一者為一二折式風琴吸嘴,其中周邊吸嘴160如第4圖所示。各中心吸嘴140包含一中心吸附盤部141,中心吸附盤部141具有一第一厚度T1。各周邊吸嘴160包含一周邊吸附盤部161,周邊吸附盤部161具有一第二厚度T2。其中,第一厚度T1大於第二厚度T2。Please refer to FIG. 2 to FIG. 4. FIG. 3 is a cross-sectional view of the
詳細地說,此些中心吸嘴140、此些中央吸嘴150及此些周邊吸嘴160的材質可為橡膠摻雜碳或矽膠摻雜碳所形成的抗靜電材質,透過調整碳的摻雜比例,可使此些中心吸嘴140、此些中央吸嘴150及此些周邊吸嘴160之表面電阻值介於10
5Ω~10
8Ω。藉此,本發明之改善翹曲問題的晶圓載板100之中心吸嘴140、中央吸嘴150及周邊吸嘴160採用抗靜電材質可避免吸附晶圓10時因靜電而使晶圓10上的元件受損。中心吸嘴140為三折式風琴吸嘴,由於對應中心區121的區塊10a翹曲弧度較大,本發明之改善翹曲問題的晶圓載板100藉由將中心吸嘴140配置為高度變化量較二折式風琴吸嘴大的三折式風琴吸嘴,可將晶圓10之區塊10a之翹曲弧度完全移除。中心吸嘴140的寬度W1可為15.1mm;中心吸附盤部141的第一厚度T1可為0.7mm;周邊吸嘴160的寬度W2可為20mm;周邊吸附盤部161的第二厚度T2可為0.11mm,但本發明不以此為限。由第3圖及第4圖可知,三折式風琴吸嘴具有三層壓褶,二折式風琴吸嘴具有二層壓褶。周邊吸嘴160的寬度W2較中心吸嘴140的寬度W1寬,可創造較大的吸附面積,而周邊吸附盤部161的第二厚度T2較中心吸附盤部141的第一厚度T1薄,具有較佳的形變幅度。藉此,本發明之改善翹曲問題的晶圓載板100將中心吸嘴140配置為較中央吸嘴150及周邊吸嘴160高於載板主體120的高度,有助於抓取晶圓10之翹曲弧度最大的區塊10a;將中央吸嘴150及周邊吸嘴160配置為吸附面積較中心吸嘴140大、形變幅度較佳的二折式吸嘴,使單一個中央吸嘴150及周邊吸嘴160可吸取較大的面積,進而將面積較大的區塊10b、10c完全吸附平整。必須說明的是中央吸嘴150的結構與周邊吸嘴160相似,不再重複繪示。
In detail, the material of these
在本發明的其他實施方式中,改善翹曲問題的晶圓載板更包含一分區控制器(圖未繪示)。分區控制器連接此些中心吸嘴、此些中央吸嘴及此些周邊吸嘴,並分別對中心區之此些中心吸嘴、中央區之此些中央吸嘴及周邊區之此些周邊吸嘴之複數吸附狀態進行分區控制。換句話說,本發明之改善翹曲問題的晶圓載板可透過分區控制器控制中心吸嘴、中央吸嘴及周邊吸嘴開始吸附晶圓的時間順序、開始吸附之吸力及解除吸附狀態之吸力。在晶圓被整平後,分區控制器解除中心吸嘴、中央吸嘴及周邊吸嘴之吸附狀態時,分區控制器可更透過一卸壓閥緩慢解除吸附狀態,避免吸嘴解除吸附狀態時因快速向晶圓的方向回彈而觸及晶圓,進而使晶圓偏離原位置。In other embodiments of the present invention, the wafer carrier for improving the warpage problem further includes a partition controller (not shown). The partition controller connects these central suction nozzles, these central suction nozzles and these peripheral suction nozzles, and controls these central suction nozzles in the central area, these central suction nozzles in the central area and these peripheral suction nozzles in the peripheral area respectively. The multiple adsorption states of the mouth are controlled by zones. In other words, the wafer carrier that improves the warping problem of the present invention can control the time sequence in which the central nozzle, the central nozzle and the peripheral nozzles start to absorb the wafer, the suction force at the beginning of adsorption, and the suction force in the release state through the partition controller . After the wafer is flattened, when the partition controller releases the adsorption state of the central nozzle, the central nozzle and the surrounding nozzles, the partition controller can slowly release the adsorption state through a pressure relief valve to avoid when the suction nozzle is released from the adsorption state Touching the wafer by bouncing back quickly towards the wafer, thereby causing the wafer to shift from its original position.
請參閱第5圖,第5圖係繪示本發明之第二實施例之改善翹曲問題的晶圓載板100a的立體圖。改善翹曲問題的晶圓載板100a包含一載板主體120a、複數中央吸嘴150及複數周邊吸嘴160。載板主體120a包含一中央區122a、一周邊區123a、複數中央通孔125、複數周邊通孔126及複數長形孔127。中央區122a具有一中心C。周邊區123a較中央區122a遠離中心C。此些中央通孔125間隔環狀排列於中央區122a;此些周邊通孔126間隔環狀排列於周邊區123a。此些中央吸嘴150分別穿設於此些中央通孔125,各中央吸嘴150與載板主體120a之間具有一中央吸嘴高度差H2a。此些周邊吸嘴160分別穿設於此些周邊通孔126,各周邊吸嘴160與載板主體120a之間具有一周邊吸嘴高度差H3a。中央吸嘴高度差H2a高於周邊吸嘴高度差H3a。在第5圖實施方式中,改善翹曲問題的晶圓載板100a之中央吸嘴150、周邊吸嘴160、周邊區123a、中央通孔125及周邊通孔126分別與第1圖實施方式之改善翹曲問題的晶圓載板100之中央吸嘴150、周邊吸嘴160、周邊區123、中央通孔125及周邊通孔126結構相同,不再贅述。特別的是,中央區122a與第1圖實施方式之中心區121加上中央區122之結構相同。改善翹曲問題的晶圓載板100a並未設置中心區、中心通孔及中心吸嘴,且改善翹曲問題的晶圓載板100a可更包含長形孔127。具體而言,長形孔127可供機械手臂穿過晶圓載板100a,藉以將晶圓(圖未繪示)向上支撐並放下,並在晶圓被放下時開始吸附晶圓。藉此,本發明的改善翹曲問題的晶圓載板100a藉由中央吸嘴150及周邊吸嘴160與載板主體120a之間的高度差異,製造晶圓被中央吸嘴150及周邊吸嘴160吸附的時間先後,消除晶圓的翹曲弧度。Please refer to FIG. 5 . FIG. 5 is a perspective view of a
由上述實施方式可知,本發明具有下列優點:其一,本發明的改善翹曲問題的晶圓載板藉由中心吸嘴、中央吸嘴及周邊吸嘴與載板主體之間的高度差異,製造晶圓被中心吸嘴、中央吸嘴及周邊吸嘴吸附的時間差,進而消除晶圓的翹曲弧度;其二,本發明之改善翹曲問題的晶圓載板將中心吸嘴配置為較中央吸嘴及周邊吸嘴高於載板主體的高度,有助於抓取晶圓之翹曲弧度最大的區塊;將中央吸嘴及周邊吸嘴配置為吸附面積較中心吸嘴大、形變幅度較佳的二折式吸嘴,使單一個中央吸嘴及周邊吸嘴可吸取較大的面積,進而將面積較大的區塊完全吸附平整;其三,本發明的改善翹曲問題的晶圓載板藉由中央吸嘴及周邊吸嘴與載板主體之間的高度差異,製造晶圓被中央吸嘴及周邊吸嘴吸附的時間先後,消除晶圓的翹曲弧度。It can be seen from the above-mentioned embodiments that the present invention has the following advantages: First, the wafer carrier that improves the warpage problem of the present invention is manufactured by the difference in height between the central suction nozzle, the central suction nozzle, and the peripheral suction nozzles and the carrier body. The time difference between the wafer being sucked by the central nozzle, the central nozzle and the peripheral nozzles, thereby eliminating the warpage of the wafer; The nozzle and peripheral nozzles are higher than the height of the main body of the carrier board, which helps to grab the area with the largest warping arc of the wafer; the central nozzle and peripheral nozzles are configured to have a larger adsorption area and a smaller deformation range than the central nozzle The best two-fold suction nozzle, so that a single central suction nozzle and peripheral suction nozzle can absorb a larger area, and then completely absorb and flatten the block with a larger area; third, the wafer carrier that improves the warpage problem of the present invention The board uses the height difference between the central nozzle and the peripheral nozzles and the main body of the carrier to manufacture the time sequence in which the wafer is sucked by the central nozzle and the peripheral nozzles, eliminating the warpage of the wafer.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above in terms of implementation, it is not intended to limit the present invention. Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be defined by the appended patent application scope.
10:晶圓
10a,10b,10c:區塊
100,100a:晶圓載板
120,120a:載板主體
121:中心區
122,122a:中央區
123,123a:周邊區
124:中心通孔
125:中央通孔
126:周邊通孔
127:長形孔
140:中心吸嘴
141:中心吸附盤部
150:中央吸嘴
160:周邊吸嘴
161:周邊吸附盤部
C:中心
H1:中心吸嘴高度差
H2,H2a:中央吸嘴高度差
H3,H3a:周邊吸嘴高度差
T1:第一厚度
T2:第二厚度
W1,W2:寬度
10:
第1圖係繪示本發明之第一實施例之改善翹曲問題的晶圓載板的立體圖; 第2圖係繪示依照第1圖之改善翹曲問題的晶圓載板的剖視示意圖; 第3圖係繪示依照第1圖之改善翹曲問題的晶圓載板的中心吸嘴的剖視圖; 第4圖係繪示依照第1圖之改善翹曲問題的晶圓載板的周邊吸嘴的剖視圖;及 第5圖係繪示本發明之第二實施例之改善翹曲問題的晶圓載板的立體圖。 Figure 1 is a perspective view of a wafer carrier that improves the warpage problem of the first embodiment of the present invention; Figure 2 is a schematic cross-sectional view of a wafer carrier that improves the warpage problem according to Figure 1; Figure 3 is a cross-sectional view of the center nozzle of the wafer carrier that improves the warpage problem according to Figure 1; Figure 4 is a cross-sectional view of the peripheral suction nozzle of the wafer carrier that improves the warpage problem according to Figure 1; and FIG. 5 is a perspective view of a wafer carrier for improving the warpage problem of the second embodiment of the present invention.
10:晶圓 10:Wafer
10a,10b,10c:區塊 10a, 10b, 10c: blocks
100:晶圓載板 100: wafer carrier
120:載板主體 120: Carrier main body
121:中心區 121: Central area
122:中央區 122:Central District
123:周邊區 123: Surrounding area
124:中心通孔 124: Center through hole
125:中央通孔 125: central through hole
126:周邊通孔 126: Perimeter through hole
140:中心吸嘴 140: Center nozzle
150:中央吸嘴 150:Central suction nozzle
160:周邊吸嘴 160: Surrounding nozzle
Claims (10)
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CN117012695A (en) * | 2023-08-24 | 2023-11-07 | 上海图双精密装备有限公司 | Wafer handover structure and handover method |
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US10663434B2 (en) * | 2017-03-31 | 2020-05-26 | Sonix, Inc. | Wafer chuck |
TWM628163U (en) * | 2022-01-18 | 2022-06-11 | 達裕科技股份有限公司 | Wafer chuck for improving warpage problem |
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CN117012695A (en) * | 2023-08-24 | 2023-11-07 | 上海图双精密装备有限公司 | Wafer handover structure and handover method |
CN117012695B (en) * | 2023-08-24 | 2024-04-30 | 上海图双精密装备有限公司 | Wafer handover structure and handover method |
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