CN116504703A - Wafer carrier plate for improving warping problem - Google Patents

Wafer carrier plate for improving warping problem Download PDF

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Publication number
CN116504703A
CN116504703A CN202210053257.8A CN202210053257A CN116504703A CN 116504703 A CN116504703 A CN 116504703A CN 202210053257 A CN202210053257 A CN 202210053257A CN 116504703 A CN116504703 A CN 116504703A
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CN
China
Prior art keywords
central
peripheral
suction nozzle
nozzle
suction
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210053257.8A
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Chinese (zh)
Inventor
陈建帆
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Dayu Technology Co ltd
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Dayu Technology Co ltd
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Application filed by Dayu Technology Co ltd filed Critical Dayu Technology Co ltd
Priority to CN202210053257.8A priority Critical patent/CN116504703A/en
Publication of CN116504703A publication Critical patent/CN116504703A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a wafer carrier for improving warpage, which comprises a carrier body, a central suction nozzle and peripheral suction nozzles. The carrier body includes a central region, a peripheral region, a central through hole, and a peripheral through hole. The central through hole is positioned in the central area; the central through hole is positioned in the central area; the peripheral through hole is located in the peripheral region. The center suction nozzle is arranged through the center through hole. The central suction nozzle is arranged through the central through hole. The peripheral suction nozzle is arranged in the peripheral through hole in a penetrating way. The central suction nozzle height difference between the central suction nozzle and the carrier plate body is higher than the central suction nozzle height difference between the central suction nozzle and the carrier plate body, and the central suction nozzle height difference is higher than the peripheral suction nozzle height difference between the peripheral suction nozzle and the carrier plate body. Therefore, the time difference that the wafer is absorbed is manufactured through the height difference between the suction nozzles, and the warping radian is eliminated.

Description

Wafer carrier plate for improving warping problem
Technical Field
The present invention relates to a wafer carrier, and more particularly, to a wafer carrier for improving warpage.
Background
In the packaging process of the wafer, besides the wafer itself naturally warps, warpage may be generated due to stacking of wafers with different expansion coefficients, or warpage may also be generated when the wafer is combined with a circuit board, and if the radian of the wafer warpage is too large, the yield of the subsequent process will be affected.
In view of this, developing a wafer carrier that ameliorates the warpage problem has become a worthy goal of the related industry.
Disclosure of Invention
Therefore, an objective of the present invention is to provide a wafer carrier for improving warpage, which is capable of leveling a wafer by using the difference in height among a center nozzle, a center nozzle and a peripheral nozzle to manufacture a time difference in which different blocks of the wafer are adsorbed.
An embodiment of the present invention provides a wafer carrier for improving warpage, which includes a carrier body, a plurality of center nozzles, and a plurality of peripheral nozzles. The carrier body comprises a central area, a peripheral area, a plurality of central through holes and a plurality of peripheral through holes. The central region surrounds the central region; the peripheral zone surrounds the central zone. The central through holes are positioned in the central area; the central through holes are positioned in the central area; the peripheral through holes are located in the peripheral region. The center suction nozzles are respectively penetrated through the center through holes, and a center suction nozzle height difference is arranged between each center suction nozzle and the carrier plate main body. The central suction nozzles are respectively penetrated through the central through holes, and a central suction nozzle height difference is arranged between each central suction nozzle and the carrier plate main body. The peripheral suction nozzles are respectively penetrated through the peripheral through holes, and a peripheral suction nozzle height difference is arranged between each peripheral suction nozzle and the carrier plate main body. Wherein the central suction nozzle height difference is higher than the central suction nozzle height difference, and the central suction nozzle height difference is higher than the peripheral suction nozzle height difference.
Therefore, the wafer carrier plate for improving the warpage problem disclosed by the invention can be used for manufacturing the time difference that the wafer is adsorbed by the suction nozzle by means of the height difference among the central suction nozzle, the peripheral suction nozzles and the carrier plate main body, so that the warpage radian of the wafer is eliminated.
Other examples of the foregoing embodiments are as follows: the central suction nozzles, the central suction nozzles and the peripheral suction nozzles are all made of an antistatic material, wherein the antistatic material is one of rubber and silica gel doped with carbon.
Other examples of the foregoing embodiments are as follows: any one of the central suction nozzles is a three-fold type organ suction nozzle, and any one of the central suction nozzles and the peripheral suction nozzles is a two-fold type organ suction nozzle.
Other examples of the foregoing embodiments are as follows: each of the center suction nozzles includes a center suction tray portion having a first thickness. Each peripheral suction nozzle comprises a peripheral suction disk portion having a second thickness. Wherein the first thickness is greater than the second thickness.
Other examples of the foregoing embodiments are as follows: the wafer carrier for improving warpage further comprises a partition controller. The partition controller is connected with the central suction nozzles, the central suction nozzles and the peripheral suction nozzles and respectively performs partition control on a plurality of adsorption states of the central suction nozzles in the central area, the central suction nozzles in the central area and the peripheral suction nozzles in the peripheral area.
Other examples of the foregoing embodiments are as follows: the number of the peripheral through holes of the peripheral area is larger than that of the central through holes of the central area.
According to one embodiment of the present invention, a wafer carrier for improving warpage is provided, which includes a carrier body, a plurality of center nozzles and a plurality of peripheral nozzles. The carrier body comprises a central region, a peripheral region, a plurality of central through holes and a plurality of peripheral through holes. The central region has a center. The peripheral region is further from the center than the central region. The central through holes are annularly arranged in the central area at intervals; the peripheral through holes are annularly arranged in the peripheral area at intervals. The central suction nozzles are respectively penetrated through the central through holes, and a central suction nozzle height difference is arranged between each central suction nozzle and the carrier plate main body. The peripheral suction nozzles are respectively penetrated through the peripheral through holes, and a peripheral suction nozzle height difference is arranged between each peripheral suction nozzle and the carrier plate main body. Wherein the central nozzle height difference is higher than the peripheral nozzle height difference.
Therefore, the wafer carrier plate for improving the warping problem disclosed by the invention can be used for manufacturing the time difference that the wafer is adsorbed by the suction nozzle by virtue of the height difference between the central suction nozzle and the peripheral suction nozzle and the carrier plate main body, so that the warping radian is eliminated.
Other examples of the foregoing embodiments are as follows: the central suction nozzles and the peripheral suction nozzles are made of an antistatic material, wherein the antistatic material is one of rubber and silica gel doped with carbon.
Other examples of the foregoing embodiments are as follows: any one of the central suction nozzle and the peripheral suction nozzles is a two-fold organ suction nozzle.
Other examples of the foregoing embodiments are as follows: the wafer carrier for improving warpage further comprises a partition controller. The partition controller is connected with the central suction nozzles and the peripheral suction nozzles and respectively performs partition control on a plurality of adsorption states of the central suction nozzles in the central area and the peripheral suction nozzles in the peripheral area.
Drawings
FIG. 1 is a perspective view of a wafer carrier for improving warpage in accordance with a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the wafer carrier in accordance with FIG. 1 illustrating the improvement of warpage problem;
FIG. 3 is a cross-sectional view of a center nozzle of the wafer carrier in accordance with FIG. 1 illustrating the improved warp problem;
FIG. 4 is a cross-sectional view of a peripheral suction nozzle of the wafer carrier in accordance with FIG. 1 illustrating the improvement of warpage problem; and
Fig. 5 is a perspective view of a wafer carrier for improving warpage according to a second embodiment of the present invention.
Wherein reference numerals are as follows:
10: wafer with a plurality of wafers
10a,10b,10c: block block
100 100a: wafer carrier
120 120a: carrier plate main body
121: central zone
122 And 122a: central zone
123 123a: peripheral region
124: center through hole
125: central through hole
126: peripheral through hole
127: elongated hole
140: center suction nozzle
141: center adsorption disk part
150: central suction nozzle
160: peripheral suction nozzle
161: peripheral adsorption disk part
C: center of the machine
H1: height difference of central suction nozzle
H2 H2a: height difference of central suction nozzle
H3 H3a: height difference of peripheral suction nozzle
T1: first thickness of
T2: second thickness of
W1, W2: width of (L)
Detailed Description
Various embodiments of the present invention will be described below with reference to the drawings. For purposes of clarity, many practical details will be set forth in the following description. However, it should be understood that these practical details are not to be taken as limiting the invention. That is, in some embodiments of the invention, these practical details are unnecessary. Moreover, for the sake of simplicity of the drawing, some conventional structures and elements are shown in the drawings in a simplified schematic manner; and repeated elements will likely be indicated by identical reference numerals.
In addition, when an element (or unit or module, etc.) is "connected" to another element, it may be referred to herein as being directly connected to the other element or being indirectly connected to the other element, i.e., with other elements interposed between the element and the other element. When an element is referred to as being "directly connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms first, second, third and the like are used for describing different elements only, and are not limited to the elements themselves, so that the first element can also be modified as the second element. And the combination of elements/units/circuits herein is not a commonly known, conventional or existing combination in the art, and it cannot be determined whether the combination relationship thereof is easily accomplished by a person having ordinary skill in the art by whether the elements/units/circuits themselves are existing.
Referring to fig. 1 to 2, fig. 1 is a perspective view of a wafer carrier 100 for improving warpage according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of the wafer carrier 100 according to fig. 1 for improving warpage. The wafer carrier 100 for improving warpage includes a carrier body 120, a plurality of center nozzles 140, a plurality of center nozzles 150, and a plurality of peripheral nozzles 160. The carrier body 120 includes a central region 121, a central region 122, a peripheral region 123, a plurality of central through holes 124, a plurality of central through holes 125, and a plurality of peripheral through holes 126. Central region 122 surrounds central region 121; the peripheral region 123 surrounds the central region 122. Such central through holes 124 are located in the central region 121; the central through holes 125 are located in the central region 122; such peripheral vias 126 are located in the peripheral region 123. The center nozzles 140 are respectively inserted into the center through holes 124, and a center nozzle height difference H1 is formed between each center nozzle 140 and the carrier body 120. The central nozzles 150 are respectively inserted into the central through holes 125, and a central nozzle height difference H2 is formed between each central nozzle 150 and the carrier body 120. The peripheral nozzles 160 are respectively inserted into the peripheral through holes 126, and a peripheral nozzle height difference H3 is formed between each peripheral nozzle 160 and the carrier body 120. Wherein the central nozzle height difference H1 is higher than the central nozzle height difference H2, and the central nozzle height difference H2 is higher than the peripheral nozzle height difference H3. Therefore, the wafer carrier 100 for improving warpage according to the present invention can eliminate the warpage radian of the wafer 10 by manufacturing the time difference that the wafer 10 is sucked by the center nozzle 140, the center nozzle 150 and the peripheral nozzle 160 by the height difference between the center nozzle 140, the center nozzle 150 and the peripheral nozzle 160 and the carrier body 120.
In detail, when the wafer 10 is placed on the wafer carrier 100 for improving the warpage problem, the center region 121, the center region 122 and the peripheral region 123 of the wafer carrier 100 for improving the warpage problem correspond to the blocks 10a,10b and 10c of the wafer 10, respectively. The warpage problem of the wafer 10 is mainly crying face warpage (block 10a higher than block 10 c) and smiling face warpage (block 10a lower than block 10 c). When the crying face warps, the warp radian of the block 10a of the wafer 10 is larger than that of the block 10b, and the warp radian of the block 10b is larger than that of the block 10c, as shown in fig. 2. Because the height difference H1 of the center suction nozzle, the height difference H2 of the center suction nozzle, and the height difference H3 of the peripheral suction nozzles are gradually decreased, when the wafer 10 is placed on the wafer carrier 100 for improving the warpage problem, the highest center suction nozzle 140 contacts the block 10a with the largest warpage radian at first, and forms a vacuum state, thereby reducing the warpage radian of the block 10a; then the central suction nozzle 150 adsorbs the block 10b with the second largest warping radian, and reduces the warping radian of the block 10 b; the peripheral suction nozzles 160 absorb the block 10c with the smallest warpage radian at the latest, so that the wafer 10 is flat. When the wafer 10 is warped in a smiling face, the working principle of the wafer carrier 100 for improving the warpage problem is the same as that of the crying face when the warpage occurs, and will not be described herein.
The number of such peripheral vias 126 of the peripheral region 123 is greater than the number of such central vias 125 of the central region 122. Specifically, since the areas of the peripheral region 123, the central region 122 and the central region 121 are reduced, the number of the peripheral through holes 126 and the peripheral suction nozzles 160 is greater than the number of the central through holes 125 and the central suction nozzles 150 so that the block 10c of the wafer 10 can be uniformly sucked. In the present embodiment, the central suction nozzles 150 and the peripheral suction nozzles 160 are respectively arranged in the central zone 122 and the peripheral zone 123 at annular intervals, the number of the central suction nozzles 140 is at least three, the shapes of the central zone 121 and the central zone 122 are consistent with 8 inch wafers, and the shapes and the sizes of the carrier plate main body 120 are consistent with 12 inch wafers. In addition, when the wafer 10 is warped, if the height difference between the highest point and the lowest point of the wafer 10 is 8mm or less, the height difference between the center nozzle height difference H1 and the peripheral nozzle height difference H3 is 8mm or more. In an embodiment, the center nozzle height difference H1 between the center nozzle 140 and the carrier body 120 may be 9.49mm; the central suction nozzle height difference H2 between the central suction nozzle 150 and the carrier body 120 may be 6.57mm; the height difference H3 between the peripheral suction nozzle 160 and the carrier body 120 may be 5.07mm, but the invention is not limited thereto. Thus, the wafer carrier 100 of the present invention, which improves the warpage problem, can improve 8 inch wafers and 12 inch wafers having warpage problems up to 4 mm.
Referring to fig. 2 to 4, fig. 3 is a cross-sectional view illustrating a center nozzle 140 of the wafer carrier 100 for improving warpage according to fig. 1. Fig. 4 is a cross-sectional view illustrating the peripheral suction nozzle 160 of the wafer carrier 100 according to fig. 1 for improving the warpage problem. The center nozzles 140, the center nozzles 150, and the peripheral nozzles 160 are all made of an antistatic material. The antistatic material may be one of rubber and silica gel doped with carbon, i.e. rubber doped with carbon or silica gel doped with carbon, but the invention is not limited thereto. Any one of the center nozzles 140 is a tri-fold organ nozzle, as shown in fig. 3; any one of the center nozzles 150 and the peripheral nozzles 160 is a two-fold type organ nozzle, wherein the peripheral nozzle 160 is shown in fig. 4. Each of the center suction nozzles 140 includes a center suction tray portion 141, and the center suction tray portion 141 has a first thickness T1. Each peripheral suction nozzle 160 includes a peripheral suction tray portion 161, and the peripheral suction tray portion 161 has a second thickness T2. Wherein the first thickness T1 is greater than the second thickness T2.
In detail, the material of the central nozzles 140, 150 and 160 may be an antistatic material formed by doping carbon with rubber or silicon, and the surface resistance of the central nozzles 140, 150 and 160 may be 10 by adjusting the doping ratio of carbon 5 Ω～10 8 Omega. Therefore, the center suction nozzle 140, the center suction nozzle 150 and the peripheral suction nozzle 160 of the wafer carrier 100 for improving the warpage problem of the present invention are made of antistatic materials, so that the damage of the components on the wafer 10 due to static electricity when the wafer 10 is sucked can be avoided. The center suction nozzle 140 is a tri-fold type organ suction nozzle, and since the warpage radian of the block 10a corresponding to the center region 121 is larger, the wafer carrier 100 for improving the warpage problem of the present invention can completely remove the warpage radian of the block 10a of the wafer 10 by configuring the center suction nozzle 140 as a tri-fold type organ suction nozzle with a larger height variation than a bi-fold type organ suction nozzle. The width W1 of the center nozzle 140 may be 15.1mm; the first thickness T1 of the central adsorption disk portion 141 may be 0.7mm; the width W2 of the peripheral suction nozzle 160 may be 20mm; the second thickness T2 of the peripheral adsorption disc 161 may be 0.11mm, but the invention is not limited thereto. As can be seen from fig. 3 and 4, the tri-fold type organ nozzle has three-layer folds and the bi-fold type organ nozzle has two-layer folds. The width W2 of the peripheral suction nozzle 160 is wider than the width W1 of the central suction nozzle 140, so that a larger suction area can be created, and the second thickness T2 of the peripheral suction disk portion 161 is thinner than the first thickness T1 of the central suction disk portion 141, so that a better deformation amplitude can be achieved. Therefore, the wafer carrier 100 for improving warpage problem of the present invention configures the center suction nozzle 140 to be higher than the center suction nozzle 150 and the peripheral suction nozzle 160 by the height of the carrier main body 120, so as to facilitate grabbing the block 10a with the largest warpage radian of the wafer 10; the central suction nozzle 150 and the peripheral suction nozzle 160 are configured as two-fold suction nozzles with larger suction area and better deformation range than the central suction nozzle 140, so thatThe single central nozzle 150 and peripheral nozzle 160 can absorb a larger area, thereby completely absorbing and flattening the blocks 10b,10c with larger areas. It should be noted that the structure of the central suction nozzle 150 is similar to that of the peripheral suction nozzle 160, and the description thereof will not be repeated.
In other embodiments of the present invention, the wafer carrier for improving warpage problem further comprises a partition controller (not shown). The partition controller is connected with the central suction nozzles, the central suction nozzles and the peripheral suction nozzles and respectively performs partition control on a plurality of adsorption states of the central suction nozzles in the central area, the central suction nozzles in the central area and the peripheral suction nozzles in the peripheral area. In other words, the wafer carrier for improving warpage problem of the present invention can control the time sequence of starting wafer suction, starting suction of suction and releasing suction of suction state of the central suction nozzle, the central suction nozzle and the peripheral suction nozzle by the partition controller. After the wafer is leveled, when the partition controller releases the adsorption state of the central suction nozzle, the central suction nozzle and the peripheral suction nozzles, the partition controller can slowly release the adsorption state through a pressure relief valve, so that the wafer is prevented from being touched due to rapid rebound towards the wafer when the suction nozzles release the adsorption state, and the wafer is further deviated from the original position.
Referring to fig. 5, fig. 5 is a perspective view of a wafer carrier 100a for improving warpage according to a second embodiment of the present invention. The wafer carrier 100a for improving warpage includes a carrier body 120a, a plurality of center nozzles 150, and a plurality of peripheral nozzles 160. The carrier body 120a includes a central region 122a, a peripheral region 123a, a plurality of central through holes 125, a plurality of peripheral through holes 126, and a plurality of elongated holes 127. The central region 122a has a center C. Peripheral region 123a is farther from center C than central region 122 a. The central through holes 125 are arranged in the central region 122a in a spaced-apart annular manner; the peripheral through holes 126 are arranged in the peripheral region 123a in a spaced-apart annular manner. The central nozzles 150 are respectively inserted into the central through holes 125, and a central nozzle height difference H2a is formed between each central nozzle 150 and the carrier body 120 a. The peripheral nozzles 160 are respectively inserted into the peripheral through holes 126, and a peripheral nozzle height difference H3a is formed between each peripheral nozzle 160 and the carrier body 120 a. The central nozzle height difference H2a is higher than the peripheral nozzle height difference H3a. In the embodiment of fig. 5, the central suction nozzle 150, the peripheral suction nozzle 160, the peripheral region 123a, the central through hole 125 and the peripheral through hole 126 of the wafer carrier 100a for improving the warpage problem are respectively identical to the central suction nozzle 150, the peripheral suction nozzle 160, the peripheral region 123, the central through hole 125 and the peripheral through hole 126 of the wafer carrier 100 for improving the warpage problem in the embodiment of fig. 1, and are not repeated. In particular, the central region 122a is the same structure as the central region 121 plus the central region 122 of the embodiment of fig. 1. The wafer carrier 100a for improving the warpage problem is not provided with a central region, a central through hole and a central suction nozzle, and the wafer carrier 100a for improving the warpage problem may further comprise an elongated hole 127. Specifically, the elongated holes 127 allow the robot arm to pass through the wafer carrier 100a, thereby supporting and lowering a wafer (not shown) upward and starting to attract the wafer as it is lowered. Therefore, the wafer carrier 100a for improving the warpage problem of the present invention eliminates the warpage radian of the wafer by the time of the wafer being sucked by the central suction nozzle 150 and the peripheral suction nozzle 160 due to the height difference between the central suction nozzle 150 and the peripheral suction nozzle 160 and the carrier main body 120 a.
From the above embodiments, the present invention has the following advantages: firstly, the wafer carrier plate for improving the warpage problem of the invention makes the time difference that the wafer is adsorbed by the central suction nozzle, the central suction nozzle and the peripheral suction nozzle by the height difference among the central suction nozzle, the central suction nozzle and the peripheral suction nozzle and the carrier plate main body, thereby eliminating the warpage radian of the wafer; secondly, the wafer carrier board for improving the warping problem of the invention arranges the central suction nozzle to be higher than the central suction nozzle and the peripheral suction nozzles, thereby being beneficial to grabbing the block with the largest warping radian of the wafer; the central suction nozzle and the peripheral suction nozzle are configured into two-fold suction nozzles with larger suction area and better deformation amplitude than the central suction nozzle, so that a single central suction nozzle and peripheral suction nozzle can suck larger area, and further, the area of a block with larger area is completely sucked and flattened; thirdly, the wafer carrier plate for improving the warpage problem eliminates the warpage radian of the wafer by the time of manufacturing the wafer to be adsorbed by the central suction nozzle and the peripheral suction nozzle according to the height difference between the central suction nozzle and the peripheral suction nozzle and the carrier plate main body.
While the present invention has been described with reference to the embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention, and it is intended that the invention be limited only by the terms of the appended claims.

Claims (10)

1. A wafer carrier for improving warpage, comprising:
a carrier body comprising:
a central region;
a central region surrounding the central region;
a peripheral region surrounding the central region;
a plurality of central through holes located in the central region;
a plurality of central through holes located in the central region; and
A plurality of peripheral through holes located in the peripheral region;
the plurality of center suction nozzles are respectively penetrated through the center through holes, and a center suction nozzle height difference is arranged between each center suction nozzle and the carrier plate main body;
the plurality of central suction nozzles are respectively penetrated through the central through holes, and a central suction nozzle height difference is arranged between each central suction nozzle and the carrier plate main body; and
the peripheral suction nozzles are respectively penetrated through the peripheral through holes, and a peripheral suction nozzle height difference is arranged between each peripheral suction nozzle and the carrier plate main body;
wherein the central nozzle height difference is higher than the central nozzle height difference, and the central nozzle height difference is higher than the peripheral nozzle height difference.
2. The wafer carrier of claim 1, wherein the central suction nozzle, and the peripheral suction nozzle are all made of an antistatic material, the antistatic material being one of rubber and silicone doped with carbon.
3. The wafer carrier of claim 1, wherein any one of the central suction nozzle is a tri-fold organ suction nozzle and any one of the central suction nozzle and the peripheral suction nozzle is a bi-fold organ suction nozzle.
4. The wafer carrier of claim 3, wherein the warp problem is ameliorated,
each central suction nozzle comprises a central suction disc part, and the central suction disc part has a first thickness; and
Each peripheral suction nozzle comprises a peripheral suction disc part, and the peripheral suction disc part has a second thickness;
wherein the first thickness is greater than the second thickness.
5. The wafer carrier of claim 1, further comprising:
and the partition controller is connected with the central suction nozzle, the central suction nozzle and the peripheral suction nozzle and is used for respectively carrying out partition control on a plurality of adsorption states of the central suction nozzle in the central area, the central suction nozzle in the central area and the peripheral suction nozzle in the peripheral area.
6. The wafer carrier of claim 1, wherein the number of peripheral through holes in the peripheral region is greater than the number of central through holes in the central region.
7. A wafer carrier for improving warpage, comprising:
a carrier body comprising:
a central region having a center;
a peripheral region farther from the center than the central region;
a plurality of central through holes, which are arranged in the central area in a spacing ring shape; and
A plurality of peripheral through holes, which are arranged in the peripheral area in a spacing ring shape;
the plurality of central suction nozzles are respectively penetrated through the central through holes, and a central suction nozzle height difference is arranged between each central suction nozzle and the carrier plate main body; and
the peripheral suction nozzles are respectively penetrated through the peripheral through holes, and a peripheral suction nozzle height difference is arranged between each peripheral suction nozzle and the carrier plate main body;
wherein the central nozzle height difference is higher than the peripheral nozzle height difference.
8. The wafer carrier of claim 7, wherein the central nozzle and the peripheral nozzles are each made of an antistatic material, the antistatic material being one of rubber and silicone doped with carbon.
9. The wafer carrier of claim 7, wherein either of the central suction nozzle and the peripheral suction nozzle is a two-fold organ suction nozzle.
10. The wafer carrier for improving warpage according to claim 7, further comprising:
and the partition controller is connected with the central suction nozzle and the peripheral suction nozzle and respectively performs partition control on a plurality of adsorption states of the central suction nozzle in the central area and the peripheral suction nozzle in the peripheral area.
CN202210053257.8A 2022-01-18 2022-01-18 Wafer carrier plate for improving warping problem Pending CN116504703A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210053257.8A CN116504703A (en) 2022-01-18 2022-01-18 Wafer carrier plate for improving warping problem

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210053257.8A CN116504703A (en) 2022-01-18 2022-01-18 Wafer carrier plate for improving warping problem

Publications (1)

Publication Number Publication Date
CN116504703A true CN116504703A (en) 2023-07-28

Family

ID=87315364

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210053257.8A Pending CN116504703A (en) 2022-01-18 2022-01-18 Wafer carrier plate for improving warping problem

Country Status (1)

Country Link
CN (1) CN116504703A (en)

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