TWI796750B - Method for fixing chips with central contact without impact force - Google Patents
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本發明是涉及一種固晶方法,尤其是一種用以將晶粒固定於基板的中心接觸的無衝擊力固晶方法。 The invention relates to a crystal-bonding method, in particular to a non-impact crystal-bonding method for fixing the crystal grain to the center contact of the substrate.
積體電路藉由大批方式,經過多道程序,製作在半導體晶圓上,晶圓進一步分割成複數晶粒。換言之,晶粒是以半導體材料製作而成未經封裝的一小塊積體電路本體。分割好的複數晶粒整齊貼附在一承載裝置上,接著一承載框負責運送承載裝置,然後將該等晶粒依序轉移至基板的複數晶粒放置區,俾利進行後續加工程序。 Integrated circuits are fabricated on semiconductor wafers through multiple procedures in a large number of ways, and the wafers are further divided into multiple crystal grains. In other words, a die is a small unpackaged integrated circuit body made of semiconductor material. Divided multiple dies are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device, and then these dies are sequentially transferred to the plurality of die placement areas on the substrate for subsequent processing procedures.
晶圓對晶圓(wafer to wafer)的直接鍵合技術已經行之有年,屬於前段製程,可以方便控制潔淨度以及精度。再者,晶圓的尺寸通常為6~12吋,尺寸較大,相對容易控制其貼合波的產生。晶圓對晶圓的直接鍵合的問題在於:應用在單晶片系統(system on a chip)上較不容易。原因在於:單晶片系統通常是各家不同廠商的晶片結合而成,要將不同邏輯電路一開始就以同一片光罩製作完成,需要花費的成本相當高昂。 Wafer to wafer (wafer to wafer) direct bonding technology has been practiced for many years. It belongs to the front-end process and can easily control the cleanliness and precision. Furthermore, the size of the wafer is usually 6-12 inches, which is relatively large, and it is relatively easy to control the generation of bonding waves. The problem with wafer-to-wafer direct bonding is that it is not easy to apply to a system on a chip. The reason is that a single-chip system is usually formed by combining chips from different manufacturers. It is very expensive to manufacture different logic circuits with the same mask from the beginning.
晶粒對晶圓的結合技術是為了整合不同廠商的小晶片(chiplet)而發展的技術,可以節省大量的開發成本,且在單晶片系統製程中可以直接應用其他廠商現有的小晶片解決方案(chiplet solution),不需要額外開發專用的邏輯電路。因此,晶粒對晶圓(die to wafer)的結合技術是目前的發展趨勢。Die-to-wafer bonding technology is a technology developed to integrate small chips (chiplets) from different manufacturers, which can save a lot of development costs, and can directly apply other manufacturers' existing chiplet solutions ( chiplet solution), no additional development of dedicated logic circuits is required. Therefore, die-to-wafer bonding technology is a current development trend.
因為傳統銲錫式結合技術已經接近極限,所以為了縮小晶粒尺寸以及接點大小,在晶粒對晶圓的結合技術方面,銅接點直接鍵合技術(即,混合鍵合技術)變成首選的解決方案。Because the traditional solder bonding technology is approaching the limit, in order to reduce the die size and joint size, the copper joint direct bonding technology (ie, hybrid bonding technology) has become the first choice in terms of die-to-wafer bonding technology solution.
然而,相對於晶圓對晶圓的直接鍵合技術,因為晶粒的尺寸較小,在貼合波的控制相當困難,所以目前尚未成功開發出適合晶粒對晶圓的混合鍵合技術。以下將介紹目前常用的三種晶粒對晶圓的結合技術。However, compared to the wafer-to-wafer direct bonding technology, due to the small size of the die, it is quite difficult to control the bonding wave, so the hybrid bonding technology suitable for die-to-wafer has not been successfully developed yet. The following will introduce the three commonly used die-to-wafer bonding technologies.
第一種晶粒對晶圓的結合技術是:固晶裝置先從承載裝置上吸取晶粒,再將晶粒移動到基板上,使得晶粒直接接觸基板,最後固晶裝置脫離晶粒,從而晶粒固定在基板上。此技術的問題在於:容易發生晶粒與基板共同包住氣泡而產生空洞(void)的情況,造成晶粒與基板沒有完全緊密貼合,導致晶粒的後續加工程序容易受到氣泡的影響,降低後續加工製成的產品良率。The first type of die-to-wafer bonding technology is: the die-bonding device first absorbs the die from the supporting device, and then moves the die to the substrate, so that the die directly contacts the substrate, and finally the die-bonding device separates from the die, thereby The die is fixed on the substrate. The problem with this technology is that it is easy for the crystal grains and the substrate to enclose air bubbles together to produce voids, resulting in the incomplete adhesion between the crystal grains and the substrate, resulting in the subsequent processing of the crystal grains being easily affected by the air bubbles, reducing the Yield rate of products made by subsequent processing.
第二種晶粒對晶圓的結合技術是:固晶裝置以空拋的方式將晶粒轉移至基板。此技術的問題在於:其一,晶粒具有一定質量,在重力的影響下,晶粒以一加速度下墜至晶粒放置區會產生較大的衝擊力,使得晶粒接觸到基板的力量較大而受損;其二,晶粒難以精準地放置在晶粒放置區上。The second die-to-wafer bonding technology is: the die-bonding device transfers the die to the substrate by air throwing. The problem of this technology is: First, the crystal grain has a certain mass. Under the influence of gravity, the crystal grain falls to the grain placement area at a certain acceleration, which will generate a large impact force, so that the crystal grain contacts the substrate. secondly, it is difficult to accurately place the die on the die placement area.
第三種晶粒對晶圓的結合技術是:固晶裝置的內部具有三個彈性件,該等彈性件位於固定表面的相對側,周邊的兩個彈性件的K值小於中心定位彈性件的K值,K值即彈簧係數。當固晶裝置往基板的方向移動時,慣性對於內外K值不同的彈性件產生形變,進而使晶粒中央先接觸基板,再產生貼合波,使得晶粒精確地轉移至晶粒放置區上。此技術的問題在於:其一,當固晶裝置往基板的方向移動時,該等彈性件會提供晶粒較大的質量慣性,導致晶粒接觸到基板的衝擊力較大而受損;其二,因為固晶裝置本身的體積小,所以彈性件十分微小,不易組裝,製造成本較高。The third die-to-wafer bonding technology is: there are three elastic parts inside the die bonding device, and the elastic parts are located on opposite sides of the fixing surface, and the K value of the two peripheral elastic parts is smaller than that of the centrally positioned elastic part. K value, K value is the spring coefficient. When the die-bonding device moves toward the substrate, the inertia will deform the elastic parts with different K values inside and outside, so that the center of the die will contact the substrate first, and then generate a bonding wave, so that the die will be accurately transferred to the die placement area. . The problem of this technology is: First, when the die-bonding device moves toward the substrate, the elastic members will provide a large mass inertia of the die, resulting in a large impact force and damage to the die when it contacts the substrate; Second, due to the small volume of the die-bonding device itself, the elastic parts are very small, difficult to assemble, and the manufacturing cost is relatively high.
另外,上述三種固晶方法在晶粒結合於基板時,晶粒的貼合速度太快,造成晶粒容易受損、歪斜或彎折。In addition, when the above three die-bonding methods are bonded to the substrate, the bonding speed of the die is too fast, causing the die to be easily damaged, skewed or bent.
本發明的主要目的在於提供一種中心接觸的無衝擊力固晶方法,能夠藉由無衝擊力的正壓控制晶粒與晶粒放置區為中心接觸,力道極小,不會損及晶粒,且無須安裝彈性件,製造成本較低。The main purpose of the present invention is to provide a non-impact crystal bonding method with center contact, which can control the crystal grain and the crystal grain placement area as the center contact by the non-impact positive pressure, the force is extremely small, and the crystal grain will not be damaged, and There is no need to install elastic parts, and the manufacturing cost is low.
本發明的另一目的在於提供一種中心接觸的無衝擊力固晶方法,能夠藉由貼合波讓晶粒完全固定於晶粒放置區上,使得晶粒能夠精準地放置在晶粒放置區上,且晶粒能夠緊密貼合在基板上,完全排除晶粒與基板包住氣泡的情況,晶粒與基板之間不會有任何空洞(void)存在,提升晶粒後續加工製成的產品良率。Another object of the present invention is to provide a center-contact non-impact die bonding method, which can completely fix the die on the die placement area by bonding waves, so that the die can be accurately placed on the die placement area , and the crystal grains can be closely attached to the substrate, completely eliminating the situation that the grains and the substrate enclose air bubbles, and there will be no voids between the grains and the substrate, which improves the product quality of the subsequent processing of the grains. Rate.
本發明的再一目的在於提供一種中心接觸的無衝擊力固晶方法,能夠藉由正壓漸漸減弱並且進一步切換成中心負壓,控制晶粒以適當貼合速度貼合於晶粒放置區上,避免晶粒受損、歪斜或彎折。Another object of the present invention is to provide a center-contact non-impact die-bonding method, which can control the die to be attached to the die placement area at an appropriate speed by gradually weakening the positive pressure and further switching to the central negative pressure. , to avoid grain damage, skewing or bending.
為了達成前述的目的,本發明提供一種中心接觸的無衝擊力固晶方法,包括下列步驟:(a)一固晶裝置拾取一晶粒,晶粒的表面無錫球且無銅柱;(b)固晶裝置將晶粒移動至一基板的一晶粒放置區的一側,基板的表面無錫球且無銅柱;(c)固晶裝置藉由一正壓吹拂晶粒的中心,使得晶粒的中心撓曲變形以接觸晶粒放置區的中心;(d)晶粒的中心在接觸晶粒放置區的中心以後形成一貼合波,貼合波從晶粒的中心逐漸往晶粒的周邊擴展,使得晶粒逐漸脫離固晶裝置並且固定於晶粒放置區上;以及(e)晶粒完全固定於晶粒放置區上。In order to achieve the aforementioned object, the present invention provides a non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal bonding device picks up a crystal grain, and the surface of the crystal grain has no tin balls and no copper pillars; (b) The die-bonding device moves the die to one side of a die placement area of a substrate. There are no tin balls and no copper pillars on the surface of the substrate; (c) the die-bonding device blows the center of the die by a positive pressure, so that the die The center deflects to contact the center of the die placement area; (d) the center of the die forms a bonding wave after contacting the center of the die placement area, and the bonding wave gradually moves from the center of the die to the periphery of the die expanding, so that the die is gradually detached from the die bonding device and fixed on the die placement area; and (e) the die is completely fixed on the die placement area.
在一些實施例中,在步驟(a)中,固晶裝置藉由一周邊負壓吸附晶粒的周邊,以固定晶粒,並且拾取晶粒。In some embodiments, in the step (a), the die bonding device absorbs the periphery of the die by a peripheral negative pressure to fix the die and pick up the die.
在一些實施例中,在步驟(b)和步驟(c)中,固晶裝置持續藉由周邊負壓吸附晶粒的周邊,以固定晶粒。In some embodiments, in step (b) and step (c), the die-bonding device continuously absorbs the periphery of the die by the peripheral negative pressure to fix the die.
在一些實施例中,在步驟(d)中,周邊負壓逐漸減弱。In some embodiments, in step (d), the peripheral negative pressure gradually decreases.
在一些實施例中,在步驟(e)中,周邊負壓完全停止。In some embodiments, in step (e), the peripheral negative pressure ceases entirely.
在一些實施例中,固晶裝置具有複數氣孔,該等氣孔連接一真空裝置,真空裝置對該等氣孔抽氣以產生真空並且提供周邊負壓,周邊負壓通過該等氣孔吸附晶粒的周邊。In some embodiments, the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device pumps air to these air holes to generate a vacuum and provide peripheral negative pressure, and the peripheral negative pressure adsorbs the periphery of the crystal through these air holes .
在一些實施例中,在步驟(d)中,正壓完全停止或維持穩定壓力。In some embodiments, in step (d), the positive pressure is completely stopped or a steady pressure is maintained.
在一些實施例中,固晶裝置具有一軸孔,軸孔連接一氣體供應裝置,氣體供應裝置對軸孔吹氣以產生氣流並且提供正壓。In some embodiments, the crystal bonding device has a shaft hole connected to a gas supply device, and the gas supply device blows gas to the shaft hole to generate air flow and provide positive pressure.
為了達成前述的目的,本發明提供一種中心接觸的無衝擊力固晶方法,包括下列步驟:(a)一固晶裝置拾取一晶粒,晶粒的表面無錫球且無銅柱;(b)固晶裝置將晶粒移動至一基板的一晶粒放置區的一側,基板的表面無錫球且無銅柱;(c)固晶裝置藉由一正壓吹拂晶粒的中心,使得晶粒的中心撓曲變形以接觸該晶粒放置區的中心;(d)晶粒的中心在接觸晶粒放置區的中心以後形成一貼合波,貼合波從晶粒的中心逐漸往晶粒的周邊擴展,然後正壓漸漸減弱並且進一步切換成一中心負壓,使得晶粒逐漸脫離固晶裝置並且固定於晶粒放置區上;以及(e)晶粒完全固定於晶粒放置區上。In order to achieve the aforementioned object, the present invention provides a non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal bonding device picks up a crystal grain, and the surface of the crystal grain has no tin balls and no copper pillars; (b) The die-bonding device moves the die to one side of a die placement area of a substrate. There are no tin balls and no copper pillars on the surface of the substrate; (c) the die-bonding device blows the center of the die by a positive pressure, so that the die The center of the grain is deflected to contact the center of the grain placement area; (d) the center of the grain forms a bonding wave after contacting the center of the grain placement area, and the bonding wave gradually moves from the center of the grain to the center of the grain peripheral expansion, and then the positive pressure is gradually weakened and further switched to a central negative pressure, so that the die is gradually detached from the die bonding device and fixed on the die placement area; and (e) the die is completely fixed on the die placement area.
在一些實施例中,在步驟(a)中,固晶裝置藉由一周邊負壓吸附晶粒的周邊,以固定晶粒,並且拾取晶粒。In some embodiments, in the step (a), the die bonding device absorbs the periphery of the die by a peripheral negative pressure to fix the die and pick up the die.
在一些實施例中,在步驟(b)和步驟(c)中,固晶裝置持續藉由周邊負壓吸附晶粒的周邊,以固定晶粒。In some embodiments, in step (b) and step (c), the die-bonding device continuously absorbs the periphery of the die by the peripheral negative pressure to fix the die.
在一些實施例中,在步驟(d)中,周邊負壓逐漸減弱。In some embodiments, in step (d), the peripheral negative pressure gradually decreases.
在一些實施例中,在步驟(e)中,周邊負壓完全停止。In some embodiments, in step (e), the peripheral negative pressure ceases entirely.
在一些實施例中,固晶裝置具有複數氣孔,該等氣孔連接一真空裝置,真空裝置對該等氣孔抽氣以產生真空並且提供周邊負壓,周邊負壓通過該等氣孔吸附晶粒的周邊。In some embodiments, the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device pumps air to these air holes to generate a vacuum and provide peripheral negative pressure, and the peripheral negative pressure adsorbs the periphery of the crystal through these air holes .
在一些實施例中,固晶裝置具有一軸孔,軸孔連接一氣體供應裝置及一真空裝置,氣體供應裝置對軸孔吹氣以產生氣流並且提供正壓,真空裝置對軸孔抽氣以產生真空並且提供中心負壓。In some embodiments, the crystal bonding device has a shaft hole, the shaft hole is connected with a gas supply device and a vacuum device, the gas supply device blows gas to the shaft hole to generate airflow and provides positive pressure, and the vacuum device pumps gas to the shaft hole to generate Vacuum and provide central negative pressure.
本發明的功效在於,本發明能夠藉由無衝擊力的正壓控制晶粒與晶粒放置區為中心接觸,晶粒接觸到基板的力量僅限於晶粒的質量,力道極小,不會損及晶粒,且無須安裝彈性件,製造成本較低。The effect of the present invention is that the present invention can control the contact between the crystal grain and the grain placement area by means of positive pressure without impact force, and the force of the grain contacting the substrate is limited to the quality of the grain, which is extremely small and will not damage crystal grain, and no elastic parts need to be installed, and the manufacturing cost is low.
再者,本發明能夠藉由貼合波讓晶粒完全固定於晶粒放置區上,使得晶粒能夠精準地放置在晶粒放置區上,且晶粒能夠緊密貼合在基板上,完全排除晶粒與基板包住氣泡的情況,晶粒與基板之間不會有任何空洞(void)存在,提升晶粒後續加工製成的產品良率。Furthermore, the present invention can completely fix the crystal grains on the grain placement area by bonding waves, so that the grains can be accurately placed on the grain placement area, and the grains can be closely attached to the substrate, completely eliminating When the die and the substrate enclose air bubbles, there will be no void between the die and the substrate, which improves the yield rate of the product produced by the subsequent processing of the die.
此外,本發明能夠藉由正壓漸漸減弱並且進一步切換成中心負壓,控制晶粒以適當貼合速度貼合於晶粒放置區上,避免晶粒受損、歪斜或彎折。In addition, the present invention can gradually weaken the positive pressure and further switch to the central negative pressure to control the bonding of the die on the die placement area at an appropriate speed to avoid damage, skew or bending of the die.
以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The implementation of the present invention will be described in more detail below with reference to the drawings and reference symbols, so that those skilled in the art can implement it after studying this specification.
請參閱圖1至圖11,圖1是本發明的中心接觸的無衝擊力固晶方法的流程圖,圖2至圖11分別是本發明的較佳實施例的步驟S1~S5的示意圖。本發明提供一種中心接觸的無衝擊力固晶方法,包括下列步驟: Please refer to FIG. 1 to FIG. 11 , FIG. 1 is a flow chart of the non-impact die-bonding method of the present invention, and FIG. 2 to FIG. 11 are schematic diagrams of steps S1 to S5 of a preferred embodiment of the present invention. The invention provides a non-impact crystal bonding method with center contact, comprising the following steps:
步驟S1,如圖1至圖7所示,一固晶裝置10拾取一晶粒20,晶粒20的表面無錫球(solder)且無銅柱(bump)。以下將列舉步驟S1的七種拾取方式。
In step S1 , as shown in FIGS. 1 to 7 , a
拾取方式一:如圖2所示,步驟S11,一承載膜30的一第一表面31上具有複數個晶粒20;步驟S12,固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21,以固定晶粒20;步驟S13,固晶裝置10向上移動,使得晶粒20脫離承載膜30,進而達到拾取晶粒20的效果。
Picking method 1: as shown in FIG. 2, step S11, a
拾取方式二:如圖3所示,步驟S11,一承載托盤30A的複數凹槽33中具有複數個晶粒20;步驟S12,固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21,以固定晶粒20;步驟S13,固晶裝置10向上移動,使得晶粒20脫離承載托盤30A的凹槽33,進而達到拾取晶粒20的效果。
Picking method 2: as shown in FIG. 3 , in step S11 , there are a plurality of
拾取方式三:如圖4A所示,步驟S11,一承載膜30的一第一表面31上具有複數個晶粒20,承載膜30的一第二表面32設置於一真空托盤30B上;如圖4B所示,步驟S12,真空托盤30B藉由一負壓82吸附承載膜30的局部區域,降低晶粒20與承載膜30的接觸面積,使得晶粒20局部從承載膜30上剝離;步驟S13,固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21,以固定晶粒20;步驟S14,固晶裝置10向上移動,使得晶粒20脫離承載膜30,進而達到拾取晶粒20的效果。
Picking method three: as shown in FIG. 4A, step S11, there are a plurality of
拾取方式四:如圖5所示,步驟S11,一承載膜30的一第一表面31上具有複數個晶粒20;步驟S12,一頂推件40對準其中一晶粒20,接觸承載膜30的一第二表面32,並且藉由承載膜30推動晶粒20至固晶裝置10的一端,降低晶粒20與承載膜30的接觸面積,使得晶粒20局部從承載膜30上剝離,同時固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21,以固定晶粒20;步驟S13,固晶裝置10向上移動,使得晶粒20脫離承載膜30,進而達到拾取晶粒20的效果。Picking method four: as shown in Figure 5, step S11, there are a plurality of
拾取方式五:如圖6所示,步驟S11,一承載膜30的一第一表面31上具有複數個晶粒20;步驟S12,一吸嘴40A對準其中一晶粒20並且接觸承載膜30的一第二表面32,打開吸嘴40A的一門板41,吸嘴40A藉由一負壓83吸附承載膜30的局部區域,降低晶粒20與承載膜30的接觸面積,使得晶粒20局部從承載膜30上剝離,同時固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21,以固定晶粒20;步驟S13,固晶裝置20向上移動,使得晶粒20脫離承載膜30,進而達到拾取晶粒20的效果。Picking method five: as shown in FIG. 6, step S11, there are a plurality of
拾取方式六:如圖7所示,步驟S11,一承載膜30的一第一表面31上具有複數個晶粒20,一挑揀裝置50挑揀其中一晶粒20;步驟S12,挑揀裝置50將晶粒20移動至固晶裝置10的一端,固晶裝置10藉由一周邊負壓81吸附晶粒20的周邊21;步驟S13,固晶裝置20向上移動,使得晶粒20脫離挑揀裝置50,進而達到拾取晶粒20的效果。Picking method six: as shown in Figure 7, in step S11, there are a plurality of
步驟S2,如圖1及圖8所示,固晶裝置10將晶粒20移動至一基板60的一晶粒放置區61的一側,基板60的表面無錫球(solder)且無銅柱(bump)。Step S2, as shown in FIG. 1 and FIG. 8, the
較佳地,在步驟S2中,固晶裝置10持續藉由周邊負壓81吸附晶粒20的周邊21,以固定晶粒20,避免晶粒20脫離固晶裝置10。Preferably, in step S2 , the
在其他實施例中,固晶裝置10亦可使用其他固定手段固定晶粒20,以達到相同的效果。In other embodiments, the
步驟S3,如圖1及圖9所示,固晶裝置10藉由一正壓71吹拂晶粒20的中心22,使得晶粒20的中心22撓曲變形以接觸晶粒放置區61的中心611。Step S3, as shown in FIG. 1 and FIG. 9 , the
較佳地,在步驟S3中,固晶裝置10持續藉由周邊負壓81吸附晶粒20的周邊21以固定晶粒20,不僅能夠防止晶粒20脫離固晶裝置10,還能夠確保整個晶粒20只有其中心22撓曲變形且最為突出,讓晶粒20的中心22能夠以點接觸的方式接觸晶粒放置區61的中心611。Preferably, in step S3, the
步驟S4,如圖1及圖10所示,晶粒20的中心22在接觸晶粒放置區61的中心611以後形成一貼合波91(bond wave),貼合波91從晶粒20的中心22逐漸往晶粒20的周邊21擴展,使得晶粒20逐漸脫離固晶裝置10並且固定於晶粒放置區61上。具體來說,因為晶粒20的中心22以點接觸的方式接觸晶粒放置區61的中心611,所以晶粒20的中心22及其鄰近之處會產生鍵結力,此鍵結力會進一步形成貼合波91,並且逐漸往晶粒20的周邊21擴展。Step S4, as shown in FIG. 1 and FIG. 10 , the
較佳地,在步驟S4中,周邊負壓81逐漸減弱,藉以降低周邊負壓81對貼合波91的擴展的干擾,確保貼合波91從晶粒20的中心22逐漸往晶粒20的周邊21擴展。Preferably, in step S4, the peripheral
較佳地,在步驟S4中,正壓71能夠完全停止,達到節省能源的效果。Preferably, in step S4, the
步驟S5,如圖1及圖11所示,晶粒20完全固定於晶粒放置區61上。具體來說,周邊負壓81完全停止,固晶裝置10不再固定晶粒20,晶粒20得以完全固定於晶粒放置區61上。Step S5 , as shown in FIG. 1 and FIG. 11 , the
圖12是本發明的另一實施例的步驟S4的示意圖。如圖12所示,在另一實施例的步驟S4中,正壓71維持穩定壓力,維持吹拂晶粒20的中心22,確保晶粒20的中心22保持固定在晶粒放置區61的中心611,直至晶粒20固定在晶粒放置區61,正壓71才完全停止。Fig. 12 is a schematic diagram of step S4 in another embodiment of the present invention. As shown in FIG. 12 , in step S4 of another embodiment, the
圖13及圖14分別是本發明的再一實施例的步驟S4和步驟S5的示意圖。如圖13所示,在再一實施例的步驟S4中,正壓71漸漸減弱並且進一步切換成一中心負壓84。如圖14所示,在再一實施例的步驟S5中,中心負壓84持續維持。FIG. 13 and FIG. 14 are schematic diagrams of step S4 and step S5 of another embodiment of the present invention, respectively. As shown in FIG. 13 , in step S4 of yet another embodiment, the
圖15是本發明的固晶裝置10和氣體供應裝置70和真空裝置80的示意圖。如圖15所示,固晶裝置10具有一軸孔11及複數氣孔12,軸孔11連接一氣體供應裝置70及一真空裝置80,該等氣孔12連接一真空裝置80。如圖9所示,在較佳實施例的步驟S3中,氣體供應裝置70對軸孔11吹氣以產生氣流並且提供正壓71。如圖12所示,在另一實施例的步驟S4中,氣體供應裝置70持續提供穩定的壓力對軸孔11吹氣。如圖2至圖10及圖12至圖14所示,在上述三個實施例的步驟S13和步驟S2~S4中,真空裝置80對該等氣孔12抽氣以產生真空並且提供周邊負壓81,周邊負壓81通過該等氣孔12吸附晶粒20的周邊21。如圖13所示,在再一實施例的步驟S4中,氣體供應裝置70對軸孔11吹氣的壓力漸漸減弱,使得正壓71漸漸減弱,等到氣體供應裝置70停止對軸孔11吹氣以後,真空裝置80對軸孔11抽氣的壓力漸漸增加,以進一步產生真空並且切換成中心負壓84。如圖14所示,在再一實施例的步驟S5中,真空裝置80持續對軸孔11抽氣以維持真空並且提供穩定的中心負壓84。FIG. 15 is a schematic diagram of the
綜上所述,本發明能夠藉由無衝擊力的正壓71控制晶粒20與晶粒放置區61為中心接觸,晶粒20接觸到基板60的力量僅限於晶粒20的質量,力道極小,不會損及晶粒20,且無須安裝彈性件,製造成本較低。In summary, the present invention can control the contact between the
再者,本發明能夠藉由貼合波91讓晶粒20完全固定於晶粒放置區61上,使得晶粒20能夠精準地放置在晶粒放置區61上,且晶粒20能夠緊密貼合在基板60上,完全排除晶粒20與基板60包住氣泡的情況,晶粒20與基板60之間不會有任何空洞(void)存在,提升晶粒20後續加工製成的產品良率。Furthermore, the present invention can completely fix the die 20 on the
又,本發明能夠藉由正壓71漸漸減弱並且進一步切換成中心負壓84,控制晶粒20以適當貼合速度貼合於晶粒放置區61上,避免晶粒20受損、歪斜或彎折。In addition, the present invention can gradually weaken the
值得一提的是,因為本發明的中心接觸的無衝擊力固晶方法是為了混合鍵合技術 (hybrid bonding)而發展,且混合鍵合技術為無錫式接合方式,所以本發明選用無錫球且無銅柱的晶粒20和基板60,以強調本發明的方法限定用在混合鍵合技術。It is worth mentioning that, because the center contact non-impact die-bonding method of the present invention is developed for the hybrid bonding technology (hybrid bonding), and the hybrid bonding technology is a tin-free bonding method, so the present invention uses solder-free balls and
需注意的是,在進行無錫化封裝時,晶粒20和基板60的表面相當重要。晶粒和基板的表面在經過化學機械研磨製程後,會直接對接,所以晶粒20和基板60的表面必須接近鏡面,原因在於:表面些許粗糙度的變化,都有可能造成晶粒20和基板60的接合失敗。在經過化學機械研磨製程後,由於材質不同,研磨的程度也不同,通常研磨程度誤差可接受範圍約在
10 nm以內,超過10 nm容易產生兩種缺陷:(1)銅接點研磨過頭;(2)銅接點預留太多,基板60的基底研磨過頭。
It should be noted that the surfaces of the
以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above-mentioned ones are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention , all should still be included in the category that the present invention intends to protect.
10:固晶裝置
11:軸孔
12:氣孔
20:晶粒
21:周邊
22:中心
30:承載膜
30A:承載托盤
30B:真空托盤
31:第一表面
32:第二表面
33:凹槽
40:頂推件
40A:吸嘴
41:門板
50:挑揀裝置
60:基板
61:晶粒放置區
611:中心
70:氣體供應裝置
71:正壓
80:真空裝置
81:周邊負壓
82,83:負壓
84:中心負壓
91:貼合波
S1~S5:步驟
S11~S14:步驟
10: Die bonding device
11: shaft hole
12: stomata
20: grain
21: Surrounding
22: center
30:
[圖1〕是本發明的中心接觸的無衝擊力固晶方法的流程圖。 [圖2〕是本發明的較佳實施例的步驟S1的拾取方式一的示意圖。 [圖3〕是本發明的較佳實施例的步驟S1的拾取方式二的示意圖。 [圖4A〕和[圖4B〕是本發明的較佳實施例的步驟S1的拾取方式三的示意圖。 [圖5〕是本發明的較佳實施例的步驟S1的拾取方式四的示意圖。 [圖6〕是本發明的較佳實施例的步驟S1的拾取方式五的示意圖。 [圖7〕是本發明的較佳實施例的步驟S1的拾取方式六的示意圖。 [圖8〕是本發明的較佳實施例的步驟S2的示意圖。 [圖9〕是本發明的較佳實施例的步驟S3的示意圖。 [圖10〕是本發明的較佳實施例的步驟S4的示意圖。 [圖11〕是本發明的較佳實施例的步驟S5的示意圖。 [圖12〕是本發明的另一實施例的步驟S4的示意圖。 [圖13〕是本發明的再一實施例的步驟S4的示意圖。 [圖14〕是本發明的再一實施例的步驟S5的示意圖。 [圖15〕是本發明的固晶裝置和氣體供應裝置和真空裝置的示意圖。 [Fig. 1] is a flow chart of the center contact non-impact crystal bonding method of the present invention. [Fig. 2] is a schematic diagram of the first picking method of step S1 in the preferred embodiment of the present invention. [Fig. 3] is a schematic diagram of the second picking method of step S1 in a preferred embodiment of the present invention. [Fig. 4A] and [Fig. 4B] are schematic diagrams of the third picking method of step S1 in the preferred embodiment of the present invention. [Fig. 5] is a schematic diagram of the fourth picking method of step S1 in the preferred embodiment of the present invention. [Fig. 6] is a schematic diagram of the fifth picking method of step S1 in a preferred embodiment of the present invention. [Fig. 7] is a schematic diagram of the sixth picking method of step S1 in the preferred embodiment of the present invention. [ Fig. 8 ] is a schematic diagram of step S2 in a preferred embodiment of the present invention. [ Fig. 9 ] is a schematic diagram of step S3 in a preferred embodiment of the present invention. [ Fig. 10 ] is a schematic diagram of step S4 in a preferred embodiment of the present invention. [ Fig. 11 ] is a schematic diagram of step S5 in a preferred embodiment of the present invention. [ Fig. 12 ] is a schematic diagram of step S4 in another embodiment of the present invention. [ Fig. 13 ] is a schematic diagram of step S4 in still another embodiment of the present invention. [ Fig. 14 ] is a schematic diagram of step S5 in still another embodiment of the present invention. [FIG. 15] is a schematic diagram of a crystal bonding device, a gas supply device and a vacuum device of the present invention.
S1~S5:步驟S1~S5: steps
Claims (15)
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TW201812992A (en) * | 2016-09-12 | 2018-04-01 | 日商捷進科技有限公司 | Semiconductor manufacturing device and manufacturing method of semiconductor device being provided with the jacking unit and a chuck |
TW202125651A (en) * | 2019-09-06 | 2021-07-01 | 日商日立化成股份有限公司 | Method of manufacturing semiconductor device and collet |
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