TWI796750B - Method for fixing chips with central contact without impact force - Google Patents

Abstract

A method for fixing chips with central contact without impact force includes the following steps: picking up a chip by a die bonding device, and wherein a surface of the chip has no solder and bump; moving the chip to one side of a chip placing area of a base plate by the die bonding device, and wherein the base plate has no solder and bump; blowing a center of the chip by a positive pressure provided from the die bonding device, thereby bending the center of the chip to contact a center of the chip placing area; forming a bond wave after the center of the chip contacts the center of the chip placing area, and spreading the bond wave from the center of the chip to periphery of the chip, and separating the chip from the die bonding device gradually and fixing the chip on the chip placing area; and fixing the chip on the chip placing area completely. As such, the method controls the center of the chip to contact the base plate by the positive pressure without impact force, the force is extremely small, so the chip cannot be hurt by the force.

Description

Center-contact non-impact die attach method

The invention relates to a crystal-bonding method, in particular to a non-impact crystal-bonding method for fixing the crystal grain to the center contact of the substrate.

Integrated circuits are fabricated on semiconductor wafers through multiple procedures in a large number of ways, and the wafers are further divided into multiple crystal grains. In other words, a die is a small unpackaged integrated circuit body made of semiconductor material. Divided multiple dies are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device, and then these dies are sequentially transferred to the plurality of die placement areas on the substrate for subsequent processing procedures.

Wafer to wafer (wafer to wafer) direct bonding technology has been practiced for many years. It belongs to the front-end process and can easily control the cleanliness and precision. Furthermore, the size of the wafer is usually 6-12 inches, which is relatively large, and it is relatively easy to control the generation of bonding waves. The problem with wafer-to-wafer direct bonding is that it is not easy to apply to a system on a chip. The reason is that a single-chip system is usually formed by combining chips from different manufacturers. It is very expensive to manufacture different logic circuits with the same mask from the beginning.

Die-to-wafer bonding technology is a technology developed to integrate small chips (chiplets) from different manufacturers, which can save a lot of development costs, and can directly apply other manufacturers' existing chiplet solutions ( chiplet solution), no additional development of dedicated logic circuits is required. Therefore, die-to-wafer bonding technology is a current development trend.

Because the traditional solder bonding technology is approaching the limit, in order to reduce the die size and joint size, the copper joint direct bonding technology (ie, hybrid bonding technology) has become the first choice in terms of die-to-wafer bonding technology solution.

However, compared to the wafer-to-wafer direct bonding technology, due to the small size of the die, it is quite difficult to control the bonding wave, so the hybrid bonding technology suitable for die-to-wafer has not been successfully developed yet. The following will introduce the three commonly used die-to-wafer bonding technologies.

The first type of die-to-wafer bonding technology is: the die-bonding device first absorbs the die from the supporting device, and then moves the die to the substrate, so that the die directly contacts the substrate, and finally the die-bonding device separates from the die, thereby The die is fixed on the substrate. The problem with this technology is that it is easy for the crystal grains and the substrate to enclose air bubbles together to produce voids, resulting in the incomplete adhesion between the crystal grains and the substrate, resulting in the subsequent processing of the crystal grains being easily affected by the air bubbles, reducing the Yield rate of products made by subsequent processing.

The second die-to-wafer bonding technology is: the die-bonding device transfers the die to the substrate by air throwing. The problem of this technology is: First, the crystal grain has a certain mass. Under the influence of gravity, the crystal grain falls to the grain placement area at a certain acceleration, which will generate a large impact force, so that the crystal grain contacts the substrate. secondly, it is difficult to accurately place the die on the die placement area.

The third die-to-wafer bonding technology is: there are three elastic parts inside the die bonding device, and the elastic parts are located on opposite sides of the fixing surface, and the K value of the two peripheral elastic parts is smaller than that of the centrally positioned elastic part. K value, K value is the spring coefficient. When the die-bonding device moves toward the substrate, the inertia will deform the elastic parts with different K values inside and outside, so that the center of the die will contact the substrate first, and then generate a bonding wave, so that the die will be accurately transferred to the die placement area. . The problem of this technology is: First, when the die-bonding device moves toward the substrate, the elastic members will provide a large mass inertia of the die, resulting in a large impact force and damage to the die when it contacts the substrate; Second, due to the small volume of the die-bonding device itself, the elastic parts are very small, difficult to assemble, and the manufacturing cost is relatively high.

In addition, when the above three die-bonding methods are bonded to the substrate, the bonding speed of the die is too fast, causing the die to be easily damaged, skewed or bent.

The main purpose of the present invention is to provide a non-impact crystal bonding method with center contact, which can control the crystal grain and the crystal grain placement area as the center contact by the non-impact positive pressure, the force is extremely small, and the crystal grain will not be damaged, and There is no need to install elastic parts, and the manufacturing cost is low.

Another object of the present invention is to provide a center-contact non-impact die bonding method, which can completely fix the die on the die placement area by bonding waves, so that the die can be accurately placed on the die placement area , and the crystal grains can be closely attached to the substrate, completely eliminating the situation that the grains and the substrate enclose air bubbles, and there will be no voids between the grains and the substrate, which improves the product quality of the subsequent processing of the grains. Rate.

Another object of the present invention is to provide a center-contact non-impact die-bonding method, which can control the die to be attached to the die placement area at an appropriate speed by gradually weakening the positive pressure and further switching to the central negative pressure. , to avoid grain damage, skewing or bending.

In order to achieve the aforementioned object, the present invention provides a non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal bonding device picks up a crystal grain, and the surface of the crystal grain has no tin balls and no copper pillars; (b) The die-bonding device moves the die to one side of a die placement area of a substrate. There are no tin balls and no copper pillars on the surface of the substrate; (c) the die-bonding device blows the center of the die by a positive pressure, so that the die The center deflects to contact the center of the die placement area; (d) the center of the die forms a bonding wave after contacting the center of the die placement area, and the bonding wave gradually moves from the center of the die to the periphery of the die expanding, so that the die is gradually detached from the die bonding device and fixed on the die placement area; and (e) the die is completely fixed on the die placement area.

In some embodiments, in the step (a), the die bonding device absorbs the periphery of the die by a peripheral negative pressure to fix the die and pick up the die.

In some embodiments, in step (b) and step (c), the die-bonding device continuously absorbs the periphery of the die by the peripheral negative pressure to fix the die.

In some embodiments, in step (d), the peripheral negative pressure gradually decreases.

In some embodiments, in step (e), the peripheral negative pressure ceases entirely.

In some embodiments, the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device pumps air to these air holes to generate a vacuum and provide peripheral negative pressure, and the peripheral negative pressure adsorbs the periphery of the crystal through these air holes .

In some embodiments, in step (d), the positive pressure is completely stopped or a steady pressure is maintained.

In some embodiments, the crystal bonding device has a shaft hole connected to a gas supply device, and the gas supply device blows gas to the shaft hole to generate air flow and provide positive pressure.

In order to achieve the aforementioned object, the present invention provides a non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal bonding device picks up a crystal grain, and the surface of the crystal grain has no tin balls and no copper pillars; (b) The die-bonding device moves the die to one side of a die placement area of a substrate. There are no tin balls and no copper pillars on the surface of the substrate; (c) the die-bonding device blows the center of the die by a positive pressure, so that the die The center of the grain is deflected to contact the center of the grain placement area; (d) the center of the grain forms a bonding wave after contacting the center of the grain placement area, and the bonding wave gradually moves from the center of the grain to the center of the grain peripheral expansion, and then the positive pressure is gradually weakened and further switched to a central negative pressure, so that the die is gradually detached from the die bonding device and fixed on the die placement area; and (e) the die is completely fixed on the die placement area.

In some embodiments, in the step (a), the die bonding device absorbs the periphery of the die by a peripheral negative pressure to fix the die and pick up the die.

In some embodiments, in step (b) and step (c), the die-bonding device continuously absorbs the periphery of the die by the peripheral negative pressure to fix the die.

In some embodiments, in step (d), the peripheral negative pressure gradually decreases.

In some embodiments, in step (e), the peripheral negative pressure ceases entirely.

In some embodiments, the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device pumps air to these air holes to generate a vacuum and provide peripheral negative pressure, and the peripheral negative pressure adsorbs the periphery of the crystal through these air holes .

In some embodiments, the crystal bonding device has a shaft hole, the shaft hole is connected with a gas supply device and a vacuum device, the gas supply device blows gas to the shaft hole to generate airflow and provides positive pressure, and the vacuum device pumps gas to the shaft hole to generate Vacuum and provide central negative pressure.

The effect of the present invention is that the present invention can control the contact between the crystal grain and the grain placement area by means of positive pressure without impact force, and the force of the grain contacting the substrate is limited to the quality of the grain, which is extremely small and will not damage crystal grain, and no elastic parts need to be installed, and the manufacturing cost is low.

Furthermore, the present invention can completely fix the crystal grains on the grain placement area by bonding waves, so that the grains can be accurately placed on the grain placement area, and the grains can be closely attached to the substrate, completely eliminating When the die and the substrate enclose air bubbles, there will be no void between the die and the substrate, which improves the yield rate of the product produced by the subsequent processing of the die.

In addition, the present invention can gradually weaken the positive pressure and further switch to the central negative pressure to control the bonding of the die on the die placement area at an appropriate speed to avoid damage, skew or bending of the die.

The implementation of the present invention will be described in more detail below with reference to the drawings and reference symbols, so that those skilled in the art can implement it after studying this specification.

Please refer to FIG. 1 to FIG. 11 , FIG. 1 is a flow chart of the non-impact die-bonding method of the present invention, and FIG. 2 to FIG. 11 are schematic diagrams of steps S1 to S5 of a preferred embodiment of the present invention. The invention provides a non-impact crystal bonding method with center contact, comprising the following steps:

In step S1 , as shown in FIGS. 1 to 7 , a die bonding device 10 picks up a die 20 , and the die 20 has no solder and no copper bumps on the surface. Seven picking methods of step S1 will be listed below.

Picking method 1: as shown in FIG. 2, step S11, a first surface 31 of a carrier film 30 has a plurality of crystal grains 20; The periphery 21 is used to fix the die 20 ; step S13 , the die bonding device 10 moves upwards so that the die 20 is detached from the carrier film 30 , thereby achieving the effect of picking up the die 20 .

Picking method 2: as shown in FIG. 3 , in step S11 , there are a plurality of dies 20 in a plurality of grooves 33 of a carrier tray 30A; in step S12 , the die bonding device 10 absorbs the periphery of the die 20 by a peripheral negative pressure 81 21 , to fix the die 20 ; step S13 , the die bonding device 10 moves upwards, so that the die 20 is separated from the groove 33 of the carrier tray 30A, thereby achieving the effect of picking up the die 20 .

Picking method three: as shown in FIG. 4A, step S11, there are a plurality of crystal grains 20 on a first surface 31 of a carrier film 30, and a second surface 32 of the carrier film 30 is arranged on a vacuum tray 30B; as shown in FIG. As shown in 4B, in step S12, the vacuum tray 30B absorbs a local area of the carrier film 30 by a negative pressure 82, reducing the contact area between the crystal grain 20 and the carrier film 30, so that the crystal grain 20 is partially peeled off from the carrier film 30; step S13 , the die-bonding device 10 absorbs the periphery 21 of the die 20 by a peripheral negative pressure 81 to fix the die 20; step S14, the die-bonding device 10 moves upwards, so that the die 20 is separated from the carrier film 30, and then the die is picked up 20 effects.

Picking method four: as shown in Figure 5, step S11, there are a plurality of crystal grains 20 on a first surface 31 of a carrier film 30; step S12, a pusher 40 is aligned with one of the crystal grains 20, and contacts the carrier film a second surface 32 of 30, and push the die 20 to one end of the die bonding device 10 by the carrier film 30, reducing the contact area between the die 20 and the carrier film 30, so that the die 20 is partially peeled off from the carrier film 30, At the same time, the die-bonding device 10 absorbs the periphery 21 of the die 20 by a peripheral negative pressure 81 to fix the die 20; step S13, the die-bonding device 10 moves upward, so that the die 20 is separated from the carrier film 30, and then picks up the die 20 effects.

Picking method five: as shown in FIG. 6, step S11, there are a plurality of crystal grains 20 on a first surface 31 of a carrier film 30; step S12, a suction nozzle 40A is aligned with one of the crystal grains 20 and contacts the carrier film 30 Open a door panel 41 of the suction nozzle 40A, and the suction nozzle 40A absorbs a local area of the carrier film 30 by a negative pressure 83, reducing the contact area between the crystal grain 20 and the carrier film 30, so that the crystal grain 20 is locally Peel off from the carrier film 30, and at the same time, the die bonding device 10 absorbs the periphery 21 of the die 20 by a peripheral negative pressure 81 to fix the die 20; step S13, the die bonding device 20 moves upward, so that the die 20 is separated from the carrier film 30, and then achieve the effect of picking up the grain 20.

Picking method six: as shown in Figure 7, in step S11, there are a plurality of crystal grains 20 on a first surface 31 of a carrier film 30, and a picking device 50 picks one of the crystal grains 20; step S12, the picking device 50 picks up the crystal grain 20; The grain 20 moves to one end of the die-bonding device 10, and the die-bonding device 10 absorbs the periphery 21 of the die 20 by a peripheral negative pressure 81; step S13, the die-bonding device 20 moves upward, so that the die 20 is separated from the picking device 50, and then The effect of picking up the grain 20 is achieved.

Step S2, as shown in FIG. 1 and FIG. 8, the die bonding device 10 moves the die 20 to one side of a die placement area 61 of a substrate 60, and the surface of the substrate 60 has no tin balls (solder) and no copper pillars ( bump).

Preferably, in step S2 , the die bonding device 10 continues to absorb the periphery 21 of the die 20 by the peripheral negative pressure 81 to fix the die 20 and prevent the die 20 from detaching from the die bonding device 10 .

In other embodiments, the die bonding device 10 may also use other fixing means to fix the die 20 to achieve the same effect.

Step S3, as shown in FIG. 1 and FIG. 9 , the die bonding device 10 blows the center 22 of the die 20 with a positive pressure 71, so that the center 22 of the die 20 is deformed to contact the center 611 of the die placement area 61 .

Preferably, in step S3, the die bonding device 10 continues to absorb the periphery 21 of the die 20 by the peripheral negative pressure 81 to fix the die 20, which can not only prevent the die 20 from detaching from the die bonding device 10, but also ensure that the entire die is Only the center 22 of the die 20 is deformed and protrudes the most, so that the center 22 of the die 20 can contact the center 611 of the die placement region 61 in a point contact manner.

Step S4, as shown in FIG. 1 and FIG. 10 , the center 22 of the crystal grain 20 forms a bond wave 91 (bond wave) after contacting the center 611 of the crystal grain placement area 61, and the bond wave 91 starts from the center of the crystal grain 20 22 gradually expands toward the periphery 21 of the die 20 , so that the die 20 gradually detaches from the die bonding device 10 and is fixed on the die placement area 61 . Specifically, since the center 22 of the die 20 contacts the center 611 of the die placement region 61 in point contact, a bonding force will be generated at the center 22 of the die 20 and its vicinity, and this bonding force will further A bonding wave 91 is formed and gradually expands toward the periphery 21 of the die 20 .

Preferably, in step S4, the peripheral negative pressure 81 is gradually weakened, so as to reduce the interference of the peripheral negative pressure 81 on the expansion of the bonding wave 91, and ensure that the bonding wave 91 gradually moves from the center 22 of the crystal grain 20 to the center of the crystal grain 20. Perimeter 21 expanded.

Preferably, in step S4, the positive pressure 71 can be completely stopped, so as to save energy.

Step S5 , as shown in FIG. 1 and FIG. 11 , the die 20 is completely fixed on the die placement area 61 . Specifically, the peripheral negative pressure 81 is completely stopped, the die bonding device 10 no longer fixes the die 20 , and the die 20 is completely fixed on the die placement area 61 .

Fig. 12 is a schematic diagram of step S4 in another embodiment of the present invention. As shown in FIG. 12 , in step S4 of another embodiment, the positive pressure 71 maintains a stable pressure to keep blowing the center 22 of the die 20 to ensure that the center 22 of the die 20 remains fixed at the center 611 of the die placement area 61 , until the die 20 is fixed in the die placement area 61, the positive pressure 71 is completely stopped.

FIG. 13 and FIG. 14 are schematic diagrams of step S4 and step S5 of another embodiment of the present invention, respectively. As shown in FIG. 13 , in step S4 of yet another embodiment, the positive pressure 71 is gradually weakened and further switched to a central negative pressure 84 . As shown in FIG. 14 , in step S5 of yet another embodiment, the central negative pressure 84 is continuously maintained.

FIG. 15 is a schematic diagram of the crystal bonding device 10 , the gas supply device 70 and the vacuum device 80 of the present invention. As shown in FIG. 15 , the crystal bonding device 10 has a shaft hole 11 and a plurality of air holes 12 , the shaft hole 11 is connected to a gas supply device 70 and a vacuum device 80 , and the air holes 12 are connected to a vacuum device 80 . As shown in FIG. 9 , in step S3 of the preferred embodiment, the gas supply device 70 blows gas to the shaft hole 11 to generate air flow and provide a positive pressure 71 . As shown in FIG. 12 , in step S4 of another embodiment, the gas supply device 70 continuously provides a stable pressure to blow gas to the shaft hole 11 . As shown in Figures 2 to 10 and Figures 12 to 14, in step S13 and steps S2 to S4 of the above three embodiments, the vacuum device 80 pumps air to the air holes 12 to generate a vacuum and provide peripheral negative pressure 81 , the peripheral negative pressure 81 adsorbs the peripheral edge 21 of the crystal grain 20 through the pores 12 . As shown in FIG. 13 , in step S4 of yet another embodiment, the pressure of the gas supply device 70 to blow air to the shaft hole 11 gradually weakens, so that the positive pressure 71 gradually weakens until the gas supply device 70 stops blowing gas to the shaft hole 11 Afterwards, the pressure of the vacuum device 80 to evacuate the shaft hole 11 is gradually increased to further generate a vacuum and switch to a central negative pressure 84 . As shown in FIG. 14 , in step S5 of yet another embodiment, the vacuum device 80 continuously pumps air to the shaft hole 11 to maintain the vacuum and provide a stable central negative pressure 84 .

In summary, the present invention can control the contact between the crystal grain 20 and the crystal grain placement area 61 through the positive pressure 71 without impact force, and the force of the crystal grain 20 contacting the substrate 60 is limited to the quality of the crystal grain 20, and the force is extremely small. , will not damage the die 20, and no elastic parts need to be installed, and the manufacturing cost is low.

Furthermore, the present invention can completely fix the die 20 on the die placement area 61 through the bonding wave 91, so that the die 20 can be accurately placed on the die placement area 61, and the die 20 can be closely attached. On the substrate 60 , air bubbles are completely eliminated between the die 20 and the substrate 60 , and there will be no voids between the die 20 and the substrate 60 , which improves the product yield rate of the subsequent processing of the die 20 .

In addition, the present invention can gradually weaken the positive pressure 71 and further switch to the central negative pressure 84 to control the bonding of the die 20 to the die placement area 61 at an appropriate bonding speed, so as to prevent the die 20 from being damaged, skewed or bent. fold.

It is worth mentioning that, because the center contact non-impact die-bonding method of the present invention is developed for the hybrid bonding technology (hybrid bonding), and the hybrid bonding technology is a tin-free bonding method, so the present invention uses solder-free balls and Die 20 and substrate 60 without copper pillars, to emphasize that the method of the present invention is limited to hybrid bonding techniques.

10 nm以內，超過10 nm容易產生兩種缺陷：(1)銅接點研磨過頭；(2)銅接點預留太多，基板60的基底研磨過頭。 It should be noted that the surfaces of the die 20 and the substrate 60 are very important when tin-free packaging is performed. The surface of the crystal grain and the substrate will be directly connected after the chemical mechanical polishing process, so the surface of the crystal grain 20 and the substrate 60 must be close to the mirror surface. 60 engagement failures. After the chemical mechanical polishing process, due to different materials, the degree of grinding is also different. Usually, the acceptable range of grinding degree error is about

Within 10 nm, more than 10 nm tends to produce two kinds of defects: (1) Copper contacts are over-polished; (2) Copper contacts are reserved too much, and the base of the substrate 60 is over-polished.

The above-mentioned ones are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention , all should still be included in the category that the present invention intends to protect.

10: Die bonding device 11: shaft hole 12: stomata 20: grain 21: Surrounding 22: center 30: Carrier film 30A: carrying tray 30B: vacuum tray 31: first surface 32: second surface 33: Groove 40: Pusher 40A: nozzle 41: door panel 50: Picking device 60: Substrate 61: Die placement area 611: center 70: Gas supply device 71: positive pressure 80: Vacuum device 81: Peripheral negative pressure 82,83: negative pressure 84: Central negative pressure 91: fit wave S1~S5: steps S11~S14: Steps

[Fig. 1] is a flow chart of the center contact non-impact crystal bonding method of the present invention. [Fig. 2] is a schematic diagram of the first picking method of step S1 in the preferred embodiment of the present invention. [Fig. 3] is a schematic diagram of the second picking method of step S1 in a preferred embodiment of the present invention. [Fig. 4A] and [Fig. 4B] are schematic diagrams of the third picking method of step S1 in the preferred embodiment of the present invention. [Fig. 5] is a schematic diagram of the fourth picking method of step S1 in the preferred embodiment of the present invention. [Fig. 6] is a schematic diagram of the fifth picking method of step S1 in a preferred embodiment of the present invention. [Fig. 7] is a schematic diagram of the sixth picking method of step S1 in the preferred embodiment of the present invention. [ Fig. 8 ] is a schematic diagram of step S2 in a preferred embodiment of the present invention. [ Fig. 9 ] is a schematic diagram of step S3 in a preferred embodiment of the present invention. [ Fig. 10 ] is a schematic diagram of step S4 in a preferred embodiment of the present invention. [ Fig. 11 ] is a schematic diagram of step S5 in a preferred embodiment of the present invention. [ Fig. 12 ] is a schematic diagram of step S4 in another embodiment of the present invention. [ Fig. 13 ] is a schematic diagram of step S4 in still another embodiment of the present invention. [ Fig. 14 ] is a schematic diagram of step S5 in still another embodiment of the present invention. [FIG. 15] is a schematic diagram of a crystal bonding device, a gas supply device and a vacuum device of the present invention.

S1~S5: steps

Claims (15)

A non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal die is picked up by a die bonding device, and the surface of the die has no tin balls and no copper pillars; (b) the die-bonding device moves the die to one side of a die placement area of a substrate, and the surface of the substrate has no tin balls and no copper pillars; (c) the die bonding device blows the center of the die with a positive pressure, so that the center of the die is deformed to contact the center of the die placement area; (d) After the center of the crystal grain contacts the center of the crystal grain placement area, a bonding wave is formed, and the bonding wave gradually expands from the center of the crystal grain to the periphery of the crystal grain, so that the crystal grain gradually breaks away from the crystal grain A die-bonding device is fixed on the die placement area; and (e) The die is completely fixed on the die placement area. The non-impact crystal bonding method with center contact as described in Claim 1, wherein, in the step (a), the crystal bonding device absorbs the periphery of the crystal grain by a peripheral negative pressure to fix the crystal grain, And pick up the die. The non-impact crystal bonding method with center contact as described in claim 2, wherein, in the step (b) and the step (c), the crystal bonding device continues to absorb the periphery of the crystal grain by the peripheral negative pressure , to fix the grain. The non-impact crystal bonding method with center contact as described in Claim 3, wherein, in the step (d), the peripheral negative pressure gradually weakens. The non-impact crystal bonding method with central contact as described in Claim 3, wherein, in the step (e), the peripheral negative pressure is completely stopped. The non-impact crystal bonding method with center contact as described in any one of claims 2 to 5, wherein the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device pumps air to the air holes To generate a vacuum and provide the peripheral negative pressure, the peripheral negative pressure adsorbs the periphery of the crystal grain through the pores. The non-impact crystal bonding method with center contact as described in Claim 1, wherein, in the step (d), the positive pressure is completely stopped or maintained at a stable pressure. The non-impact crystal bonding method with center contact as described in claim 1, wherein the crystal bonding device has a shaft hole, the shaft hole is connected to a gas supply device, and the gas supply device blows gas to the shaft hole to generate an air flow and Provide this positive pressure. A non-impact crystal bonding method with center contact, comprising the following steps: (a) a crystal die is picked up by a die bonding device, and the surface of the die has no tin balls and no copper pillars; (b) the die-bonding device moves the die to one side of a die placement area of a substrate, and the surface of the substrate has no tin balls and no copper pillars; (c) the die bonding device blows the center of the die with a positive pressure, so that the center of the die is deformed to contact the center of the die placement area; (d) The center of the crystal grain forms a bonding wave after contacting the center of the crystal particle placement area, and the bonding wave gradually expands from the center of the crystal grain to the periphery of the crystal grain, and then the positive pressure gradually weakens and further switching to a central negative pressure, so that the die is gradually detached from the die bonding device and fixed on the die placement area; and (e) The die is completely fixed on the die placement area. The non-impact crystal bonding method with center contact as described in Claim 9, wherein, in the step (a), the crystal bonding device absorbs the periphery of the crystal grain by a peripheral negative pressure to fix the crystal grain, And pick up the die. The non-impact crystal bonding method with center contact as described in claim 10, wherein, in the step (b) and the step (c), the crystal bonding device continues to absorb the periphery of the crystal grain by the peripheral negative pressure , to fix the grain. The non-impact crystal bonding method with central contact as claimed in claim 11, wherein, in the step (d), the peripheral negative pressure is gradually weakened. The non-impact crystal bonding method with central contact as claimed in claim 11, wherein, in the step (e), the peripheral negative pressure is completely stopped. The non-impact crystal bonding method with center contact as described in any one of claim items 10 to 13, wherein the crystal bonding device has a plurality of air holes, and these air holes are connected to a vacuum device, and the vacuum device exhausts the air holes To generate a vacuum and provide the peripheral negative pressure, the peripheral negative pressure adsorbs the periphery of the crystal grain through the pores. The non-impact crystal bonding method with center contact as described in Claim 9, wherein the crystal bonding device has a shaft hole, the shaft hole is connected to a gas supply device and a vacuum device, and the gas supply device blows air to the shaft hole To generate air flow and provide the positive pressure, the vacuum device evacuates the shaft bore to generate a vacuum and provide the central negative pressure.

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