JP5814713B2 - Die bonder and die bonding method - Google Patents

Description

  The present invention relates to a die bonder and a die bonding method, and more particularly to improving the production capacity of a die bonder.

  Part of the process of assembling a package by mounting a die (semiconductor chip, hereinafter simply referred to as a die) on a substrate to be mounted (hereinafter simply referred to as a substrate) such as a wiring board or a lead frame to produce a semiconductor device In addition, there are a step of dividing a die from a semiconductor wafer (hereinafter simply referred to as a wafer) and a die bonding step of mounting the divided die on a substrate.

In the die bonding process, there is a peeling process for peeling the divided dies from the wafer. In the peeling process, the dies are peeled one by one from the dicing tape held by the pickup device, and conveyed onto a substrate or a pallet using a suction jig called a collet attached to the bonding head.
Further, in the die bonding process, there is a pressure bonding process in which, after the peeling process, the die conveyed by using a suction jig is pressure-bonded on a substrate by a collet and thermally cured and bonded. For example, in order to pressure-bond the die to the substrate, a die attach film, which is a sheet-like thermosetting adhesive, is attached in advance to the back surface of the die.
In the above-described peeling step, actually, peeling is performed at the interface between the die attach film on the back surface of the die and the dicing tape.

In recent years, with the miniaturization and high functionality of semiconductor integrated circuits and the increasing number of layers, the dies have become thinner and the number of dies having a thickness of 30 μm or less has increased. For this reason, in such a thin die peeling process, various measures are taken so that chipping does not occur when the dicing tape is peeled off.
For example, in Patent Document 1, before the dicing tape (wafer sheet) is stretched in the peeling step, the wafer sheet is sprayed while moving warm air from a hot air blowing nozzle to uniformly heat the entire wafer sheet, A method has been proposed in which, by softening, a wafer sheet is stretched almost uniformly and the distance between dies (semiconductor chips) is made uniform. In the method of Patent Document 1, when picking up a die or exchanging a wafer, blow is performed again to remove the elongation of the wafer sheet. However, in the method of Patent Document 1, heat is transmitted to a die attach film formed of a thermosetting resin, which may adversely affect the thermosetting characteristics of the die attach film.

A similar problem exists in a collet that sucks and conveys a die and crimps the die. In the pressure bonding step of the die bonding step, the die is uniformly pressed against the substrate with a collet, and the die and the substrate are bonded by thermosetting with a die attach film attached to the back surface of the die. At the time of thermosetting, it is heated to the curing temperature (for example, 80 to 150 ° C.) of the thermosetting resin that forms the die attach film.
During this crimping process, substrate heat is conducted through the die to the collet. This conducted heat raises the temperature of the collet itself. In the peeling step, when the collet picks up and conveys the die, the heat of the collet is conducted to the die attach film attached to the back surface of the die through the die. For this reason, in the peeling process, the thermosetting resin of the die attach film is hardened, and the dicing tape and the die attach film may be fixed and cannot be picked up.
Therefore, in Patent Document 2, an intermediate position between the point where the die is adsorbed and the point where the die is crimped is used as the origin, and after the die is crimped, the collet is moved from the cooling device disposed under the movement path while returning to the origin. A die bonder that cools the collet with a jet air of the same is disclosed.

In the series of operations of Patent Document 2, the collet is not cooled at all when the die is picked up and pressed. That is, the cooling of the collet needs to be completed within the movement path region. However, in the system in which the jetting air for cooling is jetted from below the moving path of the bonding head to which the collet is attached, it takes time to perform sufficient cooling. For this reason, it is usually necessary to move the collet that performs an instantaneous operation in the movement path while greatly reducing the operation speed in order to perform sufficient cooling, which greatly reduces the production capacity.
The problem in the configuration of Patent Document 2 is that the cooling capability is insufficient because cooling is performed only in the movement path.
In Patent Document 3, in order to solve the problem of Patent Document 2, a cooling head is provided with a cooling blow nozzle for cooling a collet and a collet holder holding the collet with a cooling fluid from the outside. And is integrated.
However, in Patent Document 3, the weight of the bonding head increases and the projected area of the bonding head on the apparatus increases. The former will slow down. In order to increase the moving speed, the drive system is increased in size or cost. In the latter, a die mounter having two or more bonding heads needs to be separated from each other, which affects the process processing time and deteriorates the production capacity.

Japanese Patent Laid-Open No. 11-251407 JP-A-57-4129 JP 2006-120657 A

  In view of the above problems, an object of the present invention is to provide a die bonder and a die bonding method with high production capacity and low cost.

  In order to achieve the above object, a die bonder according to the present invention includes a wafer supply unit that picks up a die, a die bonding unit in which the die is heated to a predetermined temperature, and the wafer supply unit and the die bonding unit. In the die bonder having a bonding head including a collet that reciprocates along a path, adsorbs the die, and press-bonds to the substrate mounted on the die bonding unit, and a control unit that controls the operation of the entire apparatus. After the bonding head presses the die to the substrate, the collet idles at a predetermined suction flow rate while moving through the predetermined path to a predetermined first position on the predetermined path. This is the first feature of the present invention.

  The die bonder according to the first aspect of the present invention further includes a cooling nozzle, and the control unit passes the predetermined path through the predetermined path after the bonding head is pressure-bonded to the substrate. According to the present invention, the cooling nozzle sprays a cooling gas from below the collet of the bonding head that is moved up and stopped at a predetermined second position. The second feature is as follows.

  According to the third feature of the present invention, in the die bonder according to the first feature or the second feature of the present invention, the total area of the suction holes of the collet is larger than the total area of the suction holes of the collet that is not empty-sucked. To do.

  In the die bonder according to any one of the first to third features of the present invention, it is the fourth feature of the present invention that the suction flow rate of empty collet adsorption is greater than the suction flow rate when picking up the die. It is characterized by.

  In order to achieve the above object, a die bonding method of the present invention includes a wafer supply unit that picks up a die, a die bonding unit that heats the die to a predetermined temperature, the wafer supply unit, and the die bonding unit. Of a die bonder having a bonding head having a collet that adsorbs the die and press-bonds to the substrate placed on the die bonding unit, and a control unit that controls the operation of the entire apparatus. In the die bonding method, the collet descends to a second position which is a die pick-up point and sucks the die on the wafer ring in accordance with the push-up of the pick-up device, and the first position on the predetermined path. And the collet descends to a third position via a third position on the predetermined path. The step of pressure-bonding the sucked die to the substrate, the collet starting empty suction and moving to the second position via the third position and the first position, and the collet And a step of stopping the empty adsorption while moving from the first position to the second position.

  In the die bonding method according to the fifth aspect of the present invention, the collet starts the empty suction and moves to the second position via the third position and the first position. A sixth feature of the present invention includes a step of stopping at the first position and spraying a cooling gas from the cooling nozzle toward the lower side of the collet.

  In the die bonding method of the fifth feature or the sixth feature of the present invention described above, the seventh feature of the present invention is that the suction flow rate of empty collet suction is larger than the suction flow rate at the time of pickup.

  According to the present invention, the die pickup performance is improved. Further, the die bonding position accuracy is improved. Therefore, it is possible to provide a die bonder that is inexpensive and has high production capacity.

It is the conceptual diagram which looked at the die bonder which is one Embodiment of this invention from the top. It is a figure which shows the external appearance perspective view of the pick-up apparatus which is one Embodiment of this invention. It is a schematic sectional drawing which shows the principal part of the pick-up apparatus which is one Embodiment of this invention. In one Example of this invention, it is sectional drawing which showed the structure with the collet part of the bonding head. It is a schematic side view of the principal part of one Example of the die bonder of this invention. It is a flowchart for demonstrating one Example of the die-bonding operation | movement procedure of the die bonder of this invention. 6 is a timing chart when the control unit controls the bonding head, the collet, and the cooling nozzle in the embodiment of the die bonder of the present invention. It is the figure which showed one Example of the suction hole shape and the number of holes at the time of examining the conventional collet, the collet which emphasized pick-up capability, and the collet which emphasized crimping capability, respectively. It is a flowchart for demonstrating one Example of the die-bonding operation | movement procedure of the die bonder of this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, the following description is for describing one embodiment of the present invention, and does not limit the scope of the present invention. Accordingly, those skilled in the art can employ embodiments in which these elements or all of the elements are replaced with equivalent ones, and these embodiments are also included in the scope of the present invention.
In this description, components having common functions are denoted by the same reference numerals in the description of each drawing, and overlapping description is avoided as much as possible.

An embodiment of a die bonder of the present invention will be described with reference to FIG. FIG. 1 is a conceptual view of an embodiment of a die bonder according to the present invention as viewed from above. 100 is a die bonder, 1 is a wafer supply unit, 2 is a workpiece supply / conveyance unit, 3 is a die bonding unit, 120 is a cooling nozzle, and 10 is a control unit that controls the operation of the die bonder.
In the wafer supply unit 1, 11 is a wafer cassette lifter, and 12 is a pickup device. In the workpiece supply / conveyance unit 2, 21 is a stack loader, 22 is a frame feeder, and 23 is an unloader. Furthermore, in the die bonding part 3, 32 is a bonding head.

In the workpiece supply / conveyance unit 2, the substrate is supplied to the frame feeder 22 by the stack loader 21. The substrate supplied to the frame feeder 22 is transported to the unloader 23 through two processing positions on the frame feeder 22.
In the die bonding unit 3, the bonding head 32 picks up the die from the pickup device 12, and moves the die up and parallel to a bonding point on the frame feeder 22. Then, the bonding head 32 lowers the die and bonds the die onto the substrate coated with the die adhesive.
In the wafer supply unit 1, the wafer cassette lifter 11 has a wafer cassette (not shown) in which wafer rings are stored, and sequentially supplies the wafer rings to the pickup device 12.

  Next, the configuration of the pickup device 12 will be described with reference to FIGS. FIG. 2 is an external perspective view of the pickup device 12. FIG. 3 is a schematic cross-sectional view showing the main part of the pickup device 12. In the pickup device 12, 5 is a wafer, 4 is an individual die of the wafer 5, 14 is a wafer ring, 15 is an expanding ring, 16 is a dicing tape, 17 is a support ring, 18 is a die attach film (die bonding tape), 50 Is a push-up unit.

As shown in FIGS. 2 and 3, a die attach film 18 is attached to the back surface of the wafer 5, and a dicing tape 16 is attached to the back side thereof. Further, the edge of the dicing tape 16 is sandwiched and fixed between the wafer ring 14 and the expand ring 15.
That is, the pickup device 12 includes an expand ring 15 that holds the wafer ring 14, a support ring 17 that horizontally positions a dicing tape 16 that is held by the wafer ring 14 and to which a plurality of dies 4 (wafers 5) are bonded, and a support ring 17. A push-up unit 50 is disposed inside the ring 17 and pushes the die 4 upward. The push-up unit 50 is moved in the vertical direction by a driving mechanism (not shown), and the pickup device 12 is moved in the horizontal direction.
Thus, as the die 4 is made thinner, the die bonding adhesive is changed from a liquid to a film, and a film-like adhesive material called a die attach film 18 is provided between the wafer 5 and the dicing tape 16. The structure is pasted. In the wafer 5 having the die attach film 18, dicing is performed on the wafer 5 and the die attach film 18. In recent years, there is a tape in which the dicing tape 16 and the die attach film 18 are integrated.

When the die 4 is pushed up, the pickup device 12 lowers the expanding ring 15 holding the wafer ring 14. At this time, since the support ring 17 does not descend, the dicing tape 16 held on the wafer ring 14 is stretched to widen the distance between the dies 4 so that each die 4 can be easily recognized and the individual dies can be easily separated and pushed up. Become.
The push-up unit 50 pushes up the die 4 from below the die and improves the pick-up property of the die 4 by the collet. As the thickness is reduced, the adhesive is changed from liquid to film-like, and a film-like adhesive material called a die attach film 18 is attached between the wafer and the dicing tape 16. In the wafer having the die attach film 18, dicing is performed on the wafer and the die attach film 18. Accordingly, in the peeling (pushing up) step, the die 4 and the die attach film 18 are peeled off from the dicing tape 16, and the collet adsorbs and picks up the die 4.

With reference to FIG. 4, an embodiment of the pickup apparatus and pickup method of the present invention will be described. FIG. 4 is a cross-sectional view showing the configuration of the collet portion of the bonding head in one embodiment of the present invention. 40 is a collet part, 41 is a collet holder, 42 is a collet, 41v is a suction hole of the collet holder 41, 42v is a suction hole of the collet 42, and 42t is a collar of the collet 42.
As shown in FIG. 4, the collet portion 40 of the bonding head 32 includes a collet 42, a collet holder 41 that holds the collet 42, and suction holes 41 v and 42 v that are provided in each of them and suck the die 4. is there. The arrows in FIG. 4 indicate the suction direction.

FIG. 5 is a schematic side view of the main part of an embodiment of the die bonder of the present invention. This die bonder is a device for mounting various dies (semiconductor chips) on a substrate.
In FIG. 5, for example, a wafer 5 (not shown) in which a large number of dies 4 are assembled is placed on the wafer supply unit 1. A die attach film 18 (not shown) is affixed to the back surface of the wafer 5 and is diced so that it can be picked up separately for each die 4, and a dicing tape 16 is affixed to the back surface.
The die bonding unit 3 includes an attach table on which the substrate P is placed and a heating device provided on the attach table (not shown). In the heating device, the control unit 10 sets the substrate P transported on the attach table to a predetermined temperature (not shown). The substrate P is transported from the upstream on the attach table by a transport mechanism (not shown), and transported downstream after the die 4 mounting operation (die bonding) is completed.
The collet unit 40 is provided in a bonding head 32 (not shown), and the bonding head 32 moves between the wafer supply unit 1 and the die bonding unit 3.

An embodiment of the operation of the die bonder of the present invention will be described with reference to FIGS. FIG. 6 is a flowchart for explaining an embodiment of the die bonding operation procedure of the die bonder of the present invention. The control unit 10 controls the following processing operations.
In FIG. 5, initial setting of the die bonder is performed for each model (step S0). For example, the heating temperature of the die bonding part, the air ejection amount (nozzle flow rate) of the cooling nozzle, the collet adsorption flow rate, the collet crimping load, and the crimping time.
The collet unit 40 moves to a position P1 above the position P2 that is a pickup point of the pickup device 12 of the wafer supply unit 1 (step S1).
Next, the collet unit 40 descends to a position P2 that is the pick-up point of the die 4 and sucks the die 4 on the wafer ring 14 in accordance with the push-up of the pick-up device 12, and again returns to the position P1 above the pick-up point. Return (step S2).
The collet portion 40 that has attracted the die 4 moves to a position P3 above the crimping point. After that, it continues to descend to the position P4 that is the crimping point of the substrate P, and after the sucked die 4 is crimped to the substrate P, it returns to the position P3 above the position P4 that is the crimping point again (step S3).
When die bonding is completed for all the substrates, the die bonding process is terminated, and when there is a substrate on which no die is mounted yet, the process proceeds to step S5 (step S4).
Next, in order to cool the collet unit 40, suction is started without the die 4 (step S5). Adsorption in the absence of the die 4 is referred to as empty adsorption.
Then, the collet unit 40 returns to the position P1 before sucking the next die 4 and stops empty suction (step S6).
Next, the collet 42 is cooled from below by jetting cooling air from the cooling nozzle 120 to the collet 40 (step S7).
Thereafter, the collet unit 40 repeats Steps S2 to S7.
Note that step S7 may be started before step S6. Alternatively, as will be described with reference to FIG. 7, empty suction may be performed immediately before picking up the die 4. For cooling, instead of air, a cooling gas such as nitrogen gas may be used.

The position P1 in step S1 and the position P1 in step S6 may be different positions and heights.
The timing of starting the suction of the cooling air to the collet portion 40 may be started immediately after the collet 42 is separated from the die 4 that has been crimped after the die 4 has been crimped.
Further, the position P1 is directly above the position P2 in the embodiment of FIG. However, it is not necessary to be directly above, and in order to operate at high speed, the bonding head 32 (collet portion 40) moves diagonally upward or diagonally downward as shown in FIG. Is preferably obliquely above position P2. Similarly, the position P3 is also preferably obliquely above the position P4 from the viewpoint of high speed operation.

Next, FIG. 7 is a timing chart when the control unit 10 controls the bonding head 32, the collet unit 40, and the cooling nozzle 120 in the embodiment of the die bonder of the present invention. An embodiment of the operation of the die bonder of the present invention will be described with reference to FIG.
The horizontal axis in FIG. 7 is time, which is common to each control signal.
The “(1) BH-XY” signal indicates a control signal for on / off operation of the movement operation of the bonding head 32 in the XY direction. The “(2) BH-Z” signal indicates a control signal for controlling the height of the bonding head 32. Hereinafter, the “(3) holding load” signal is ON / OFF of the pressing load of the collet portion 40, the “(4) load exhaust” signal is ON / OFF of the exhaust of the collet portion 40, and the “(5) collet cooling” signal is On / off of the solenoid valve for suction of the collet unit 40, “(6) Collet adsorption” signal is on / off of suction of the collet unit 40, and “(7) Cooling nozzle” signal is a cooling nozzle for cooling the collet 42 120 on / off.

The timing chart of FIG. 7 starts from time t0 immediately after the die bonder 100 press-bonds the die 4 to the substrate P.
At time t0, the “(1) BH-XY” signal is off, and the operation of the bonding head 32 in the XY directions is stopped. The bonding head 32 starts to rise in response to the “(2) BH-Z” signal. The “(3) holding load” signal is ON, and the tip portion (collet 42) of the collet portion 40 is fixed (not a load that can be crimped but held with a force that does not move the tip portion (holding load). Have been). The “(4) Load exhaust” signal is off. The “(5) Collet cooling” signal is off. The “(6) Collet adsorption” signal is off. The “(7) Cooling nozzle” signal is off, and the cooling nozzle 120 is not ejecting cooling air.

At time t1, the bonding head 32 reaches the height v1 (XY movement permitted height after bonding), the “(1) BH-XY” signal is ON, and the operation of the bonding head 32 in the XY direction is started. In addition, the “(5) collet cooling” signal is turned on, and the adsorption solenoid valve of the collet unit 40 is opened. The solenoid valve is turned on early so that the “(6) Collet suction” signal is turned on at time t2 because the operation starts late and a time lag occurs.
At time t2, the bonding head 32 reaches the height v2 (collet suction release height), turns on the “(6) Collet suction release” signal, and sucks air from the collet portion 40 (by air suction). The cooling of the collet 42 and the collet unit 40 is started and continued until time t10.
At time t3, the bonding head 32 reaches the height v3 (maximum height), and thereafter, the rising stops at this height and moves only in the horizontal direction.
At time t4, the bonding head 32 reaches the descent start permission position h1 by horizontal movement.
At time t5 after the elapse of a predetermined time T4 from time t4, the “(1) BH-XY” signal is turned off, and the bonding head 32 stops moving in the horizontal direction, and the “(7) cooling nozzle” signal. Is turned on, the cooling nozzle 120 blows air from below to the lower part of the collet 42. The cooling nozzle 120 cools the collet portion 40 including the collet 42 during time T5.

At time t <b> 6, the “(7) cooling nozzle” signal is turned off, and the cooling nozzle 120 stops blowing air. In addition, under the control of the “(2) BH-Z” signal, the bonding head 32 starts to descend to attract the die 4.
A time T6 from time t6 to time t7 is an exhaust start timing waiting time in the collet unit 40.
At time t7 after the time T6 has elapsed, the “(3) holding load” signal is off and the load on the tip (collet 42) of the collet 40 is free. Further, the “(4) load exhaust” signal is turned on, and the internal pressure of the collet portion 40 is lowered in order to switch from a holding load at which the collet 42 is fixed to a load for picking up.

From time t6 to t9, under the control of the “(2) BH-Z” signal, the bonding head 32 descends to the height v4, and at time t8 when the descent is stopped, a low-speed start timer (not shown) is started. In the embodiment of the die bonder of the present invention, the time t9 is adjusted to be a time after the time t8.
At time t10 after the predetermined time T9 has elapsed after the low-speed start timer, the “(6) Collet adsorption” signal is turned off, and the “(7) Cooling nozzle” signal is turned on, and the cooling nozzle 120 ejects air. To start.
At time t11, the “(6) collet adsorption” signal is turned on, the “(7) cooling nozzle” signal is turned off, and the cooling nozzle 120 stops blowing air. Further, the bonding head 32 starts to descend to the pickup height of the die 4 under the control of the “(2) BH-Z” signal.
At time t <b> 12, the bonding head 32 descends to the pickup height of the die 4 and stops under the control of the “(2) BH-Z” signal.

  In the example of FIG. 7, the height at which the cooling nozzle 120 blows cooling air onto the collet 42 is a position v4 that is lower than the highest position v3 of the bonding head 32. However, the height at which the cooling nozzle 120 blows the cooling air onto the collet 42 can be arbitrarily changed, and may be the highest position v3 of the bonding head 32, for example.

According to the embodiment described above, the die pickup performance is improved. Further, the die bonding position accuracy is improved. Therefore, it is possible to provide a die bonder that is inexpensive and has high production capacity.
Further, according to the above-described embodiment, the air adhering to the collet can be removed by spraying the cooling air onto the collet with the cooling nozzle, and the pick-up ability and the die press-bonding ability are improved. Note that what is ejected from the cooling nozzle need not be air, and may be other gas such as nitrogen gas.

  FIG. 8 shows the shape of the suction hole and the number of holes when a die 4 is examined (a) a conventional collet, (b) a collet that emphasizes the pickup capability, and (c) a collet that emphasizes the crimping capability. It is the figure which showed the Example. Further, the column for cooling the collet on the right side of FIG. 8 shows the flow rate of air blown from the cooling nozzle.

The type (a) is a case of a conventional collet, and the suction holes are evenly arranged so that the dies 4 are sucked evenly. For example, the suction hole diameter is 0.5 mm and the number of holes is 35 (suction hole area≈6.87 mm ² ).
Type (b) is a case of a collet with an emphasis on pickup capability, and air is sucked for cooling the collet until it returns to position P1 after crimping (see FIG. 5). For this reason, a small number of suction holes are arranged in the central part so that heat can be easily conducted to the edge part, and many suction holes are arranged in the edge part so that heat can be easily exhausted. Further, the suction hole diameter is made larger than that of the conventional collet and the number of holes is increased to facilitate exhaustion. For example, the suction hole diameter is 0.8 mm and the number of holes is 41 (the suction hole area≈20.60 mm ² ). The suction hole diameter may be the same as the conventional one, and the number of holes may be increased to increase the total suction area. Further, the number of suction holes may be the same as in the prior art, and the hole diameter may be increased to increase the total suction area.
The type (c) is a case of a collet that places importance on the crimping capability, and the suction hole diameter is reduced and the number of holes is also reduced so that the pressure can be well transmitted to the die 4 during crimping. For this reason, a small number of suction holes are arranged in the central part so that heat can be easily conducted to the edge part, and many suction holes are arranged in the edge part so that heat can be easily exhausted. Further, in order to increase the crimping capability, the suction hole diameter is made smaller than that of the conventional collet and the number of holes is reduced to increase the crimping area. For example, a suction hole diameter 0.3 mm, hole number 21 (the suction holes area ≒ 1.48 mm ^2). The suction hole diameter may be the same as the conventional one, and the total number of suction areas may be reduced by reducing the number of holes. Further, the number of suction holes may be the same as the conventional one, and the hole diameter may be reduced to reduce the total suction area.

For reference, the adsorption flow rate in the case of the types (a) to (c) and the nozzle flow rate ejected by the collet cooling nozzle 120 are shown. As shown in FIG. 8, in the type (b) in which the pickup capacity is emphasized, the adsorption flow rate is close to the maximum (8.9 L / min) compared to the conventional type (a) flow rate of 8.4 L / min. Become. Further, in the type (c) in which the pressure bonding capability is emphasized, the adsorption flow rate is as small as 7.9 L / min.
Further, the flow rate of the air blown to cool the collet from below at the position P1 is 8.0 L / min for the type (a), 7.5 L / min for the type (b), and the type (b) Is 8.5 L / min. This means that the cooling time of the type (b) can be made shorter than that of the type (a) when the flow rate of the blown-out air is the same as the conventional one. Therefore, the time to stop at the position P1 can be shortened, high-speed operation is possible, and productivity is further improved.

  In addition to the first embodiment of the die bonder of the present invention, by using the collet with emphasis on the pickup capability shown in FIG. 8, until returning to the post-crimping position P1, or until moving to the position P2 for pick-up By sucking air to cool the collet, the cooling efficiency of the collet is further increased, and the cooling time by the cooling nozzle at the position P1 can be shortened. Accordingly, high-speed operation is possible and productivity is further improved.

The following can be further said from FIG. That is, until the bonding head returns to the position P1 for picking up again after die press bonding, the suction flow rate is set to a larger suction flow rate than the collet suction flow rate at the time of picking up, so that the conventional collet shape can be obtained. The effects of the first embodiment or the second embodiment can be realized.
For example, in the example of FIG. 8, even if the type (a) is a collet shape, the suction flow rate is set so that the flow rate at the time of pickup is sucked at 8.4 L / min, and the suction flow rate after die press bonding is set to 8. By controlling the adsorbing flow rate so as to set the suction at 9 L / min, the effect of the first or second embodiment can be realized even with the conventional collet shape.

FIG. 9 is a flowchart for explaining an embodiment of the die bonding operation procedure of the die bonder of the present invention. The control unit 10 controls the following processing operations.
In the flowchart of FIG. 9, a collet adsorption amount switching step S8 is inserted between the processing operations of steps S1 and S3 in the flowchart of FIG. 6, and a collet adsorption amount switching step S9 is inserted between the processing of steps S4 and S5. It is a thing. Accordingly, the operations in steps S8 and S9 will be described, and the description of the processing operations in other steps will be omitted.
That is, in step S8, the suction flow rate of the collet is set to a suction flow rate suitable for the pickup of the die, and the processing operation after step S2 is performed.
In step S9, the collet adsorption flow rate is set to an adsorption flow rate suitable for cooling the collet after the die is crimped, and the processing operations in and after step S5 are performed.

According to the third embodiment of the present invention, the same effects as those of the first or second embodiment can be obtained even if the collet is designed in the conventional manner. Alternatively, using a conventional collet, the same effects as those of the first or second embodiment can be obtained.
In Examples 1 to 3, the collet and the collet part are cooled by idle adsorption, but it is obvious that the collet may be ejected instead of adsorption.

  1: Wafer supply unit, 2: Workpiece supply / conveyance unit, 3: Die bonding unit, 4: Die, 5: Wafer, 10: Control unit, 11: Wafer cassette lifter, 12: Pickup device, 14: Wafer ring, 15 : Expanding ring, 16: Dicing tape, 17: Support ring, 18: Die attach film, 21: Stack loader, 22: Frame feeder, 23: Unloader, 32: Bonding head, 40: Collet part, 41: Collet holder, 42 : Collet, 41v, 42v: suction hole, 42t: collar of collet 42, 50: push-up unit, 100: die bonder, 120: nozzle for cooling, P: substrate.

Claims (6)

A wafer supply unit that picks up a die, a die bonding unit that heats the die to a predetermined temperature, and a reciprocating path between the wafer supply unit and the die bonding unit through a predetermined path to adsorb the die and the die bonding unit In a die bonder having a bonding head provided with a collet for pressure-bonding to a substrate placed on the substrate, and a control unit for controlling the operation of the entire apparatus,
The controller controls the collet at a predetermined suction flow rate while the bonding head moves to a predetermined first position on the predetermined path through the predetermined path after the die is bonded to the substrate. A die bonder characterized by air suction.   2. The die bonder according to claim 1, further comprising a cooling nozzle, wherein the control unit moves the bonding head on the predetermined path through the predetermined path after the die is pressure-bonded to the substrate. A die bonder, wherein the die is stopped at a predetermined second position, and the cooling nozzle sprays a cooling gas from below the collet of the bonding head stopped at the second position. In die bonder according to claim 1 or claim 2 Symbol placement, adsorption rate of the air suction of the collet, characterized in that more than adsorption rate when picking up the die die bonder. A wafer supply unit that picks up a die, a die bonding unit that heats the die to a predetermined temperature, and a reciprocating path between the wafer supply unit and the die bonding unit through a predetermined path to adsorb the die and the die bonding unit In a die bonding method for a die bonder having a bonding head having a collet for pressure bonding to a substrate placed on the substrate, and a control unit for controlling the operation of the entire apparatus.
The collet descends to a second position which is a die pick-up point, adsorbs the die on the wafer ring in accordance with the push-up of the pick-up device, and moves to the first position on the predetermined path; ,
The collet is lowered to a fourth position via a third position on the predetermined path, and the sucked die is crimped to a substrate;
The collet starts empty suction and moves to the second position via the third position and the first position;
And a step of stopping the empty adsorption while the collet moves from the first position to the second position. 5. The die bonding method according to claim 4 , wherein the collet starts the empty suction and moves to the second position via the third position and the first position. A die bonding method comprising: a step of stopping at a position and spraying a cooling gas from a cooling nozzle toward the lower side of the collet. 6. The die bonding method according to claim 4 or 5 , wherein an adsorption flow rate of empty collet adsorption is larger than an adsorption flow rate during the pickup.

Images