TWI834450B - Method for stripping die with pushing means and air control means - Google Patents
Method for stripping die with pushing means and air control means Download PDFInfo
- Publication number
- TWI834450B TWI834450B TW111150004A TW111150004A TWI834450B TW I834450 B TWI834450 B TW I834450B TW 111150004 A TW111150004 A TW 111150004A TW 111150004 A TW111150004 A TW 111150004A TW I834450 B TWI834450 B TW I834450B
- Authority
- TW
- Taiwan
- Prior art keywords
- center
- target block
- die
- air pressure
- negative pressure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000007664 blowing Methods 0.000 claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000000630 rising effect Effects 0.000 claims description 5
- 230000000994 depressogenic effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 33
- 238000010586 diagram Methods 0.000 description 18
- 238000001179 sorption measurement Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是有關一種晶粒剝離方法,特別是一種利用頂出手段結合氣壓控制手段將晶粒與承載膜分離的晶粒剝離方法。The present invention relates to a method for peeling off crystal grains, in particular to a method for peeling off crystal grains using ejection means combined with air pressure control means to separate crystal grains from a carrier film.
晶圓被切割成複數個晶粒以後,該等晶粒將會從承載膜被轉移到基板上。在轉移的過程中,首先,支撐裝置支撐承載膜的目標區塊;接著,在理想狀態之下,複數個頂推件從支撐裝置的內部上升至支撐裝置的外部並且透過目標區塊推動晶粒上升,使得晶粒的周邊與目標區塊的周邊分離,且晶粒的中心與目標區塊的中心分離;在晶粒上升的過程中,晶粒接觸到固晶裝置,固晶裝置吸取晶粒;最後,該等頂推件下降至支撐裝置的內部,同時固晶裝置將晶粒移動至基板上。After the wafer is cut into a plurality of die, the die will be transferred from the carrier film to the substrate. During the transfer process, first, the support device supports the target block carrying the film; then, under ideal conditions, a plurality of pushers rise from the inside of the support device to the outside of the support device and push the die through the target block Rising, the periphery of the crystal grain is separated from the periphery of the target block, and the center of the crystal grain is separated from the center of the target block; during the process of the crystal grain rising, the crystal grain contacts the crystal bonding device, and the crystal bonding device absorbs the crystal grain ; Finally, the pushing members are lowered to the inside of the supporting device, and at the same time, the die-bonding device moves the die to the substrate.
然而,當該等頂推件透過目標區塊推動晶粒上升時,如果承載膜的黏度較強,則目標區塊的中心仍會緊緊地黏住晶粒的中心,但又恰好可與支撐裝置分離,此時只有晶粒的周邊與目標區塊的周邊分離,造成固晶裝置無法將晶粒從承載膜上移開。However, when the pushing members push the die upward through the target block, if the viscosity of the carrier film is strong, the center of the target block will still stick tightly to the center of the die, but it will just fit in with the support. The device is separated. At this time, only the periphery of the die is separated from the periphery of the target block, causing the die bonding device to be unable to move the die from the carrier film.
再者,當該等頂推件透過目標區塊推動晶粒上升時,如果承載膜的黏度太強,則不僅目標區塊的中心仍會緊緊地黏住晶粒的中心,且又目標區塊的中心也會緊緊地黏住支撐裝置,造成晶粒的中心嚴重彎曲變形,甚至破損。Furthermore, when the pushing members push the die upward through the target block, if the viscosity of the carrier film is too strong, not only the center of the target block will still stick tightly to the center of the die, but also the target area will The center of the block will also stick tightly to the supporting device, causing the center of the grain to be severely bent, deformed, or even damaged.
此外,當該等頂推件透過目標區塊推動晶粒上升時,該等頂推件上升的距離較大,導致晶粒的中心與目標區塊的中心的剝離時間較長,增加作業時間,降低產能。In addition, when the push pieces push the die upward through the target block, the lift distance of the push pieces is larger, resulting in a longer peeling time between the center of the die and the center of the target block, which increases the operation time. Reduce production capacity.
又,當該等頂推件透過目標區塊推動晶粒上升時,該等頂推件的頂端較為尖銳,應力容易過度集中,進而發生晶粒破損或承載膜破損且殘留在晶粒的表面。In addition, when the push pieces push the die upward through the target area, the tops of the push pieces are relatively sharp, and the stress is easily excessively concentrated, causing damage to the die or damage to the carrier film and remaining on the surface of the die.
還有,該等頂推件藉由承載膜推動晶粒的上升速度較快,晶粒與固晶裝置的接觸力量過大,導致晶粒破損。In addition, these pushing members use the carrier film to push the crystal grains upward at a faster speed, and the contact force between the crystal grains and the die-bonding device is too large, resulting in damage to the crystal grains.
本發明的主要目的在於提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,能夠藉由抬高作用、吸附作用和吹拂作用,降低承載膜的黏度對於晶粒的影響力。The main purpose of the present invention is to provide a method for peeling off grains using ejection means combined with air pressure control means, which can reduce the influence of the viscosity of the carrier film on the grains through the lifting effect, adsorption effect and blowing effect.
本發明的另一目的在於提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,能夠藉由抬高作用、吸附作用和吹拂作用,降低承載膜的黏度對於支撐裝置的影響力。Another object of the present invention is to provide a grain peeling method that uses ejection means combined with air pressure control means, which can reduce the influence of the viscosity of the carrier film on the support device through the lifting effect, adsorption effect and blowing effect.
本發明的又一目的在於提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,能夠藉由持續吹拂作用以較緩和的方式將晶粒與承載膜分離,縮短剝離時間,且不會有應力集中的問題。Another object of the present invention is to provide a method for peeling off wafers using an ejection method combined with an air pressure control method, which can separate the wafers from the carrier film in a gentle manner through continuous blowing, shortening the peeling time without causing any problems. Stress concentration problem.
本發明的又一目的在於提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,能夠藉由持續吹拂作用讓晶粒以較緩和的方式接觸固晶裝置,晶粒與固晶裝置的接觸力量較小。Another object of the present invention is to provide a method for peeling off crystal grains using ejection means combined with air pressure control means, which can allow the crystal grains to contact the crystal bonding device in a gentle manner through continuous blowing. The contact between the crystal grains and the crystal bonding device is Less powerful.
為了達成前述的目的,本發明提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,包括下列步驟:藉由一周邊負壓吸附一承載膜的一目標區塊的周邊,且該目標區塊上具有一晶粒,該晶粒的表面無錫球且無銅柱;複數個頂推件透過該目標區塊推動該晶粒上升,使得該晶粒的周邊與該目標區塊的周邊分離;藉由一中心負壓吸附該目標區塊的中心,使得該目標區塊的中心向下凹陷並且與該晶粒的中心分離;該中心負壓切換成一中心正壓,藉由該中心正壓吹拂該目標區塊的中心,使得該目標區塊的中心向上隆起並且接觸該晶粒的中心;以及藉由該中心正壓持續吹拂該目標區塊的中心,使得該目標區塊的中心持續向上隆起並且推動該晶粒上升,且該晶粒從其周邊往其中心的方向與該目標區塊逐漸分離。In order to achieve the aforementioned goals, the present invention provides a method for peeling off wafers using ejection means combined with air pressure control means, which includes the following steps: adsorbing the periphery of a target area of a carrier film through a peripheral negative pressure, and the target area There is a die on the block, and the surface of the die has no tin balls and no copper pillars; a plurality of pushing parts push the die up through the target block, so that the periphery of the die is separated from the periphery of the target block; A central negative pressure is used to adsorb the center of the target block, causing the center of the target block to be sunken downward and separated from the center of the die; the central negative pressure is switched to a central positive pressure, and is blown by the central positive pressure. The center of the target block causes the center of the target block to bulge upward and contacts the center of the die; and the center positive pressure continues to blow the center of the target block, causing the center of the target block to bulge upward. And the crystal grain is pushed up, and the crystal grain is gradually separated from the target block in the direction from its periphery to its center.
在一些實施例中,藉由該中心正壓持續吹拂該目標區塊的中心進一步包括下列步驟:在該晶粒上升的過程中,該晶粒接觸到一固晶裝置;該固晶裝置吸取該晶粒並且將該晶粒往上移動,從而該晶粒與該目標區塊完全分離。In some embodiments, continuously blowing the center of the target area by the central positive pressure further includes the following steps: during the rising process of the die, the die contacts a die-bonding device; the die-bond device absorbs the die grain and move the grain upward, so that the grain is completely separated from the target block.
在一些實施例中,在藉由該中心正壓持續吹拂該目標區塊的中心之後進一步包括下列步驟:停止提供該中心正壓,且該等頂推件下降,使得該目標區塊的中心逐漸恢復成平坦狀,同時該固晶裝置將該晶粒移動至一基板上,該基板的表面無錫球且無銅柱。In some embodiments, after the center of the target block is continuously blown by the center positive pressure, the following steps are further included: stopping providing the center positive pressure, and the pushing members descend, so that the center of the target block gradually It returns to a flat state, and at the same time, the die-bonding device moves the die to a substrate, and the surface of the substrate has no tin balls and no copper pillars.
在一些實施例中,藉由該周邊負壓吸附該目標區塊的周邊的步驟進一步包括下列步驟:一支撐裝置支撐該承載膜的該目標區塊並且提供該周邊負壓;其中,該等頂推件透過該目標區塊推動該晶粒上升的步驟進一步包括下列步驟:該等頂推件從該支撐裝置的內部上升至該支撐裝置的外部,該目標區塊的中心與該支撐裝置分離;其中,藉由該中心負壓吸附該目標區塊的中心的步驟進一步包括下列步驟:該支撐裝置提供該中心負壓,使得該目標區塊的中心接觸該支撐裝置;其中,該中心負壓切換成該中心正壓的步驟進一步包括下列步驟:該支撐裝置將該中心負壓切換成該中心正壓,使得該目標區塊的中心與該支撐裝置分離;其中,藉由該中心正壓持續吹拂該目標區塊的中心進一步包括下列步驟:該支撐裝置持續提供該中心正壓;以及其中,停止提供該中心正壓的步驟進一步包括下列步驟:該支撐裝置停止提供該中心正壓,且該等頂推件下降至該支撐裝置的內部,該目標區塊的中心與該支撐裝置之間的空間中的空氣通過該支撐裝置向外排出,使得該目標區塊的中心逐漸恢復成平坦狀並且接觸該支撐裝置。In some embodiments, the step of adsorbing the periphery of the target area by the peripheral negative pressure further includes the following steps: a supporting device supports the target area of the carrier film and provides the peripheral negative pressure; wherein, the tops The step of pushing the die upward through the target block by the pusher further includes the following steps: the pushers rise from the inside of the support device to the outside of the support device, and the center of the target block is separated from the support device; Wherein, the step of adsorbing the center of the target block by the central negative pressure further includes the following steps: the supporting device provides the central negative pressure so that the center of the target block contacts the supporting device; wherein the central negative pressure switches The step of establishing the central positive pressure further includes the following steps: the supporting device switches the central negative pressure to the central positive pressure, so that the center of the target block is separated from the supporting device; wherein, the central positive pressure continues to blow The center of the target block further includes the following steps: the supporting device continues to provide the central positive pressure; and wherein the step of stopping providing the central positive pressure further includes the following steps: the supporting device stops providing the central positive pressure, and the The pushing member descends to the inside of the support device, and the air in the space between the center of the target block and the support device is discharged outward through the support device, so that the center of the target block gradually returns to a flat state and contacts the support device.
在一些實施例中,該等頂推件透過該目標區塊推動該晶粒上升的步驟、藉由該中心負壓吸附該目標區塊的中心的步驟、該中心負壓切換成該中心正壓的步驟、藉由該中心正壓持續吹拂該目標區塊的中心以及停止提供該中心正壓的步驟皆進一步包括下列步驟:該支撐裝置持續提供該周邊負壓,並且藉由該周邊負壓持續吸附該目標區塊的周邊。In some embodiments, the pushing members push the die upward through the target block, the step of adsorbing the center of the target block through the center negative pressure, and the center negative pressure is switched to the center positive pressure. The steps of continuously blowing the center of the target area by the central positive pressure and the steps of stopping providing the central positive pressure further include the following steps: the support device continues to provide the peripheral negative pressure, and continues to use the peripheral negative pressure. Adsorb the surrounding area of the target block.
在一些實施例中,在停止提供該中心正壓的步驟之後進一步包括下列步驟:該支撐裝置停止提供該周邊負壓;以及,將該支撐裝置移動至另一目標區塊的下方並且支撐該另一目標區塊,將該固晶裝置移動至另一目標區塊的上方。In some embodiments, after the step of stopping providing the central positive pressure, the following steps are further included: the supporting device stops providing the peripheral negative pressure; and, moving the supporting device below another target block and supporting the other A target block is used to move the die-bonding device above another target block.
在一些實施例中,該支撐裝置開設複數個第一氣壓通道、一第二氣壓通道、複數個第一開口及複數個第二開口,該等第一氣壓通道分別與該等第一開口相連通,該第二氣壓通道與該等第二開口相連通;其中,該等第一氣壓通道提供該周邊負壓,該周邊負壓通過該等第一開口吸附該目標區塊的周邊;其中,該等頂推件設置於該第二氣壓通道中並且能夠穿過該等第二開口上升或下降;其中,該第二氣壓通道提供該中心負壓或該中心正壓,該中心負壓通過該等第二開口吸附該目標區塊的中心,該中心正壓通過該等第二開口吹拂該目標區塊的中心;以及其中,該目標區塊的中心與該支撐裝置之間的空間中的空氣依序通過該等第二開口與該第二氣壓通道向外排出。In some embodiments, the support device is provided with a plurality of first air pressure channels, a second air pressure channel, a plurality of first openings and a plurality of second openings, and the first air pressure channels are respectively connected with the first openings. , the second air pressure channel is connected with the second openings; wherein, the first air pressure channels provide the peripheral negative pressure, and the peripheral negative pressure absorbs the periphery of the target block through the first openings; wherein, the peripheral negative pressure The pushing member is disposed in the second air pressure channel and can rise or fall through the second openings; wherein the second air pressure channel provides the central negative pressure or the central positive pressure, and the central negative pressure passes through the second openings. The second opening attracts the center of the target block, and the center positive pressure blows the center of the target block through the second openings; and wherein the air in the space between the center of the target block and the supporting device depends on The air is discharged outward through the second openings and the second air pressure channel.
在一些實施例中,該支撐裝置包括一外殼及一內殼,該內殼設置於該外殼中,該外殼的內部開設該等第一氣壓通道,該外殼的頂端開設該等第一開口,該內殼的內部開設該第二氣壓通道,該內殼的頂端開設該等第二開口。In some embodiments, the support device includes an outer shell and an inner shell. The inner shell is provided in the outer shell. The first air pressure channels are opened inside the outer shell. The first openings are opened at the top of the outer shell. The second air pressure channel is set inside the inner shell, and the second openings are set at the top of the inner shell.
在一些實施例中,該等第一氣壓通道與該第二氣壓通道皆連接一真空裝置,該第二氣壓通道連接一氣體供應裝置,該真空裝置對該等第一氣壓通道抽氣以產生真空並且提供該周邊負壓,該真空裝置該第二氣壓通道抽氣以產生真空並且提供該中心負壓,該氣體供應裝置對該第二氣壓通道吹氣以產生氣流並且提供該中心正壓。In some embodiments, the first air pressure channels and the second air pressure channels are connected to a vacuum device, the second air pressure channel is connected to a gas supply device, and the vacuum device pumps the first air pressure channels to generate a vacuum. And provide the peripheral negative pressure, the vacuum device evacuates the second air pressure channel to generate vacuum and provide the central negative pressure, and the gas supply device blows air to the second air pressure channel to generate air flow and provide the central positive pressure.
在一些實施例中,藉由該中心正壓持續吹拂該目標區塊的中心進一步包括下列步驟:該中心正壓的壓力持續增加。In some embodiments, continuously blowing the center of the target area by the central positive pressure further includes the following steps: the pressure of the central positive pressure continues to increase.
本發明的功效在於,本發明的方法能夠藉由周邊負壓的吸附作用和該等頂推件的抬高作用,達到晶粒的周邊與目標區塊的周邊分離的效果,且本發明的方法能夠藉由中心負壓的吸附作用和中心正壓的吹拂作用,降低承載膜的黏度對晶粒的影響力。藉此,即使目標區塊的中心接觸晶粒的中心,中心正壓的持續吹拂作用也能夠輕易地將晶粒的中心從目標區塊的中心上剝離,不會受到承載膜的黏度影響。The effect of the present invention is that the method of the present invention can achieve the effect of separating the periphery of the die and the periphery of the target block through the adsorption effect of the peripheral negative pressure and the lifting effect of the pushing parts, and the method of the present invention It can reduce the influence of the viscosity of the carrier film on the crystal grains through the adsorption effect of the central negative pressure and the blowing effect of the central positive pressure. Thus, even if the center of the target block contacts the center of the die, the continuous blowing effect of the central positive pressure can easily peel the center of the die away from the center of the target block without being affected by the viscosity of the carrier film.
再者,本發明的方法能夠藉由該等頂推件的抬高作用、中心負壓的吸附作用和中心正壓的吹拂作用,降低承載膜的黏度對於支撐裝置的影響力。藉此,即使目標區塊的中心接觸支撐裝置,中心正壓的持續吹拂作用也能夠輕易地將目標區塊的中心從支撐裝置上剝離,不會受到承載膜的黏度影響,從而晶粒不會發生彎曲變形的問題。Furthermore, the method of the present invention can reduce the influence of the viscosity of the carrier film on the support device through the lifting effect of the pushing parts, the adsorption effect of the central negative pressure, and the blowing effect of the central positive pressure. In this way, even if the center of the target block contacts the support device, the continuous blowing effect of the central positive pressure can easily peel the center of the target block from the support device without being affected by the viscosity of the carrier film, so that the crystal grains will not The problem of bending deformation occurs.
此外,中心正壓的持續吹拂作用能夠縮短晶粒的中心從目標區塊的中心上的剝離時間,縮短作業時間,提升產能。In addition, the continuous blowing effect of the central positive pressure can shorten the peeling time of the center of the grain from the center of the target block, shorten the operation time, and increase the production capacity.
又,中心正壓的持續吹拂作用能夠讓晶粒的中心與目標區塊的中心以較為緩和的方式逐漸分離,不會有應力集中的問題,避免晶粒破損或承載膜破損且殘留在晶粒的表面。In addition, the continuous blowing effect of the central positive pressure can gradually separate the center of the die from the center of the target area in a relatively gentle manner, without the problem of stress concentration, avoiding damage to the die or damage to the carrier film and remaining in the die. s surface.
還有,中心正壓的持續吹拂作用能夠讓目標區塊的中心緩和地向上隆起,目標區塊的中心能夠緩慢地推動晶粒上升並且以較為緩和的方式接觸固晶裝置,降低晶粒與固晶裝置的接觸力量,避免晶粒破損。In addition, the continuous blowing effect of the central positive pressure can make the center of the target block gently bulge upward. The center of the target block can slowly push the crystal grains up and contact the die-bonding device in a more gentle way, reducing the distance between the die and the solid-state device. The contact force of the crystal device is used to avoid damage to the crystal grains.
以下配合圖式及元件符號對本發明的實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。The following is a more detailed description of the embodiments of the present invention with reference to drawings and component symbols, so that those skilled in the art can implement them after reading this specification.
圖1A和圖1B是本發明的方法的流程圖,圖2是本發明的方法的步驟S10的示意圖,圖3是本發明的方法的步驟S20的示意圖,圖4是本發明的方法的步驟S30的示意圖,圖5是本發明的方法的步驟S40的示意圖,圖6至圖9是本發明的方法的步驟S50的示意圖。本發明提供一種利用頂出手段結合氣壓控制手段的晶粒剝離方法,包括下列步驟:Figures 1A and 1B are flow charts of the method of the present invention. Figure 2 is a schematic diagram of step S10 of the method of the present invention. Figure 3 is a schematic diagram of step S20 of the method of the present invention. Figure 4 is a schematic diagram of step S30 of the method of the present invention. 5 is a schematic diagram of step S40 of the method of the present invention, and FIGS. 6 to 9 are schematic diagrams of step S50 of the method of the present invention. The present invention provides a method for peeling off grains using ejection means combined with air pressure control means, which includes the following steps:
步驟S10,如圖1A和圖2所示,一支撐裝置10支撐一承載膜20的一目標區塊21,提供一周邊負壓13,並且藉由周邊負壓13吸附承載膜20的目標區塊21的周邊211,且目標區塊21上具有一晶粒30,晶粒30的表面無錫球且無銅柱。Step S10, as shown in FIG. 1A and FIG. 2, a
步驟S20,如圖1A和圖3所示,複數個頂推件40從支撐裝置10的內部上升至支撐裝置10的外部並且透過目標區塊21推動晶粒30上升,使得晶粒30的周邊31與目標區塊21的周邊211分離,同時目標區塊21的中心212與支撐裝置10分離。Step S20 , as shown in FIG. 1A and FIG. 3 , a plurality of pushing
步驟S30,如圖1A和圖4所示,支撐裝置10提供一中心負壓14,並且藉由中心負壓14吸附目標區塊21的中心212,使得目標區塊21的中心212向下凹陷並且與晶粒30的中心32分離以接觸支撐裝置10。Step S30, as shown in FIG. 1A and FIG. 4, the
步驟S40,如圖1A和圖5所示,支撐裝置10將中心負壓14切換成一中心正壓15,並且藉由中心正壓15吹拂目標區塊21的中心212,使得目標區塊21的中心212向上隆起並且與支撐裝置10分離以接觸晶粒30的中心32。Step S40, as shown in FIGS. 1A and 5 , the
步驟S50,如圖1B、圖6、圖7、圖8和圖9所示,支撐裝置10持續提供中心正壓15,並且藉由中心正壓15持續吹拂目標區塊21的中心212,使得目標區塊21的中心212持續向上隆起並且推動晶粒30上升,且晶粒30從其周邊31往其中心32的方向與目標區塊21逐漸分離。Step S50, as shown in Figure 1B, Figure 6, Figure 7, Figure 8 and Figure 9, the
綜上所述,本發明的方法能夠藉由周邊負壓13的吸附作用和該等頂推件40的抬高作用,達到晶粒30的周邊31與目標區塊21的周邊211分離的效果,且本發明的方法能夠藉由中心負壓14的吸附作用和中心正壓15的吹拂作用,降低承載膜20的黏度對於晶粒的影響力。藉此,即使目標區塊21的中心212接觸晶粒30的中心32,中心正壓15的持續吹拂作用也能夠輕易地將晶粒30的中心32從目標區塊21的中心212上剝離,不會受到承載膜20的黏度影響。To sum up, the method of the present invention can achieve the effect of separating the
再者,本發明的方法能夠藉由該等頂推件40的抬高作用、中心負壓14的吸附作用和中心正壓15的吹拂作用,降低承載膜20的黏度對於支撐裝置10的影響力。藉此,即使目標區塊21的中心212接觸支撐裝置10,中心正壓15的持續吹拂作用也能夠輕易地將目標區塊21的中心212從支撐裝置10上剝離,不會受到承載膜20的黏度影響,從而晶粒30不會發生彎曲變形的問題。Furthermore, the method of the present invention can reduce the influence of the viscosity of the
此外,中心正壓15的持續吹拂作用能夠縮短晶粒30的中心32從目標區塊21的中心212上的剝離時間,縮短作業時間,提升產能。In addition, the continuous blowing effect of the central
又,中心正壓15的持續吹拂作用能夠讓晶粒30的中心32與目標區塊21的中心212以較為緩和的方式逐漸分離,不會有應力集中的問題,避免晶粒30破損或承載膜20破損且殘留在晶粒30的表面。In addition, the continuous blowing effect of the central
如圖1B、圖8及圖9所示,在較佳實施例中,步驟S50,在晶粒30上升的過程中,晶粒30接觸到一固晶裝置50;固晶裝置50吸取晶粒30並且將晶粒30往上移動,從而晶粒30與目標區塊21完全分離。更詳而言之,中心正壓15的持續吹拂作用能夠讓目標區塊21的中心212緩和地向上隆起,目標區塊21的中心212能夠緩慢地推動晶粒30上升並且以較為緩和的方式接觸固晶裝置50,降低晶粒30與固晶裝置50的接觸力量,避免晶粒30破損。再者,由於晶粒30的中心32能夠輕易地從目標區塊21的中心212上剝離,因此固晶裝置50能夠輕易地將晶粒30往上移動,不會受到承載膜20的黏度影響。As shown in Figure 1B, Figure 8 and Figure 9, in the preferred embodiment, in step S50, during the rising process of the die 30, the die 30 contacts a die-
圖10和圖11是本發明的方法的步驟S60的示意圖。在較佳實施例中,在步驟S50之後進一步包括下列步驟:步驟S60,如圖1B、圖10和圖11所示,支撐裝置10停止提供中心正壓15,且該等頂推件40下降至支撐裝置10的內部,目標區塊21的中心212與支撐裝置10之間的空間中的空氣通過支撐裝置10向外排出,使得目標區塊21的中心212逐漸恢復成平坦狀並且接觸支撐裝置10,同時固晶裝置50將晶粒30移動至一基板80上,基板80的表面無錫球且無銅柱。Figures 10 and 11 are schematic diagrams of step S60 of the method of the present invention. In a preferred embodiment, the following steps are further included after step S50: step S60, as shown in FIG. 1B, FIG. 10 and FIG. 11, the supporting
如圖1A、圖1B和圖3至圖11所示,在較佳實施例中,步驟S20、步驟S30、步驟S40、步驟S50、步驟S60皆進一步包括下列步驟:支撐裝置10持續提供周邊負壓13並且藉由周邊負壓13持續吸附目標區塊21的周邊211。藉此,晶粒30的周邊31與目標區塊21的周邊211能夠持續保持分離。As shown in Figures 1A, 1B, and Figures 3 to 11, in a preferred embodiment, steps S20, S30, S40, S50, and S60 further include the following steps: the
如圖1B及圖6至圖9所示,在較佳實施例中,步驟S50進一步包括下列步驟:中心正壓15的壓力持續增加。更清楚地說,受到中心正壓15的壓力持續增加的影響之下,目標區塊21的中心212能夠以穩定的速度持續向上隆起,使得晶粒30的中心32與目標區塊21的中心212能夠以穩定的速度逐漸分離。
As shown in Figure 1B and Figures 6 to 9, in a preferred embodiment, step S50 further includes the following steps: the pressure of the central
圖12是本發明的方法的步驟S70的示意圖,圖13是本發明的方法的步驟S80的示意圖。在較佳實施例中,在步驟S60之後進一步包括下列步驟: Figure 12 is a schematic diagram of step S70 of the method of the present invention, and Figure 13 is a schematic diagram of step S80 of the method of the present invention. In a preferred embodiment, the following steps are further included after step S60:
步驟S70,如圖1B及圖12所示,支撐裝置10停止提供周邊負壓13。
Step S70, as shown in FIG. 1B and FIG. 12, the
步驟S80,如圖1B及圖13所示,將支撐裝置10移動至另一目標區塊21的下方並且支撐另一目標區塊21A,將固晶裝置50移動至另一目標區塊21A的上方。
Step S80, as shown in FIG. 1B and FIG. 13, move the
具體而言,由於支撐裝置10已經停止提供周邊負壓13,因此支撐裝置10不再藉由周邊負壓13吸附目標區塊21,支撐裝置10得以順利地移動到另一目標區塊21,不會受到周邊負壓13的影響,同時固晶裝置50也對準另一目標區塊21A上的晶粒30,以便對另一目標區塊21A上的晶粒30進行轉移程序。
Specifically, since the
如圖2所示,在較佳實施例中,支撐裝置10包括一外殼11及一內殼12,內殼12設置於外殼11中。外殼11的內部開設複數個第一氣壓通道111,外殼11的頂端開設複數個第一開口112,該等第一氣壓通道111分別與該等第一開口112相連通。內殼12的內部開設一第二氣壓通道121,內殼12的頂端開設複數個第二開口122,該第二氣壓通道121與該等第二開口122相連通。
As shown in FIG. 2 , in the preferred embodiment, the
如圖2至圖11所示,該等第一氣壓通道111提供周邊負壓13,周邊負壓13通過該等第一開口112吸附目標區塊21的周邊211。如圖3和圖10所示,該等頂推件40設置於第二氣壓通道121中並且能夠穿過該等第二開口122上升或下降。如圖4至圖9所示,第二氣壓通道121提供中心負壓14或中心正壓15,中心負壓14通過該等第二開口122吸附目標區塊21的中心212,中心正壓15通過該等第二開口122吹拂目標區塊21的中心212。如圖10和圖11所示,目標區塊21的中心212與支撐裝置10之間的空間中的空氣依序通過該等第二開口122與第二氣壓通道121向外排出。As shown in FIGS. 2 to 11 , the first
圖14是本發明的第一氣壓通道111、第二氣壓通道121、真空裝置60與氣體供應裝置70的連接關係的示意圖。如圖14所示,該等第一氣壓通道111與第二氣壓通道121皆連接一真空裝置60,第二氣壓通道121連接一氣體供應裝置70。如圖2至圖11及圖14所示,真空裝置60對該等第一氣壓通道111抽氣以產生真空並且提供周邊負壓13。如圖4及圖14所示,真空裝置60對第二氣壓通道121抽氣以產生真空並且提供中心負壓14。如圖5至圖9及圖14所示,氣體供應裝置70對第二氣壓通道121吹氣以產生氣流並且提供中心正壓15。Figure 14 is a schematic diagram of the connection relationship between the first
以上所述者僅為用以解釋本發明的較佳實施例,並非企圖據以對本發明做任何形式上的限制,是以,凡有在相同的發明精神下所作有關本發明的任何修飾或變更,皆仍應包括在本發明意圖保護的範疇。The above are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modifications or changes related to the present invention are made under the same spirit of the invention. , should still be included in the scope of protection intended by the present invention.
10:支撐裝置10:Support device
11:外殼11: Shell
111:第一氣壓通道111: First air pressure channel
112:第一開口112:First opening
12:內殼12:Inner shell
121:第二氣壓通道121: Second air pressure channel
122:第二開口122:Second opening
13:周邊負壓13: Peripheral negative pressure
14:中心負壓14: Center negative pressure
15:中心正壓15: Center positive pressure
20:承載膜20: Carrier film
21,21A:目標區塊21,21A: Target block
211:周邊211:Periphery
212:中心212:Center
30:晶粒30: grain
31:周邊31: Surroundings
32:中心32:Center
40:頂推件40: Push piece
50:固晶裝置50:Crystal bonding device
60:真空裝置60: Vacuum device
70:氣體供應裝置70:Gas supply device
80:基板80:Substrate
S10~S80:步驟S10~S80: steps
圖1A和圖1B是本發明的方法的流程圖。 圖2是本發明的方法的步驟S10的示意圖。 圖3是本發明的方法的步驟S20的示意圖。 圖4是本發明的方法的步驟S30的示意圖。 圖5是本發明的方法的步驟S40的示意圖。 圖6至圖9是本發明的方法的步驟S50的示意圖。 圖10和圖11是本發明的方法的步驟S60的示意圖。 圖12是本發明的方法的步驟S70的示意圖。 圖13是本發明的方法的步驟S80的示意圖。 圖14是本發明的第一氣壓通道、第二氣壓通道、真空裝置與氣體供應裝置的連接關係的示意圖。 Figures 1A and 1B are flow charts of the method of the present invention. Figure 2 is a schematic diagram of step S10 of the method of the present invention. Figure 3 is a schematic diagram of step S20 of the method of the present invention. Figure 4 is a schematic diagram of step S30 of the method of the present invention. Figure 5 is a schematic diagram of step S40 of the method of the present invention. Figures 6 to 9 are schematic diagrams of step S50 of the method of the present invention. Figures 10 and 11 are schematic diagrams of step S60 of the method of the present invention. Figure 12 is a schematic diagram of step S70 of the method of the present invention. Figure 13 is a schematic diagram of step S80 of the method of the present invention. Figure 14 is a schematic diagram of the connection relationship between the first air pressure channel, the second air pressure channel, the vacuum device and the gas supply device of the present invention.
S10~S40:步驟 S10~S40: steps
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111150004A TWI834450B (en) | 2022-12-26 | 2022-12-26 | Method for stripping die with pushing means and air control means |
JP2023113969A JP2024092928A (en) | 2022-12-26 | 2023-07-11 | Die peeling method combining extrusion means and air pressure control means |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111150004A TWI834450B (en) | 2022-12-26 | 2022-12-26 | Method for stripping die with pushing means and air control means |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI834450B true TWI834450B (en) | 2024-03-01 |
TW202427620A TW202427620A (en) | 2024-07-01 |
Family
ID=91269513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111150004A TWI834450B (en) | 2022-12-26 | 2022-12-26 | Method for stripping die with pushing means and air control means |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2024092928A (en) |
TW (1) | TWI834450B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM314429U (en) * | 2006-12-15 | 2007-06-21 | Powertech Technology Inc | Structure of disengaging aparatus for pickup semiconductor chips |
TW201011857A (en) * | 2008-09-02 | 2010-03-16 | Gallant Prec Machining Co Ltd | Peeling off method and device |
CN107452648A (en) * | 2016-05-31 | 2017-12-08 | 致茂电子股份有限公司 | Die pick-up method |
TW201838065A (en) * | 2017-03-24 | 2018-10-16 | 日商新川股份有限公司 | Pickup device and pickup method |
CN115223912A (en) * | 2021-04-16 | 2022-10-21 | 先进科技新加坡有限公司 | Separating chips from tape by air ejection |
-
2022
- 2022-12-26 TW TW111150004A patent/TWI834450B/en active
-
2023
- 2023-07-11 JP JP2023113969A patent/JP2024092928A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM314429U (en) * | 2006-12-15 | 2007-06-21 | Powertech Technology Inc | Structure of disengaging aparatus for pickup semiconductor chips |
TW201011857A (en) * | 2008-09-02 | 2010-03-16 | Gallant Prec Machining Co Ltd | Peeling off method and device |
CN107452648A (en) * | 2016-05-31 | 2017-12-08 | 致茂电子股份有限公司 | Die pick-up method |
TW201838065A (en) * | 2017-03-24 | 2018-10-16 | 日商新川股份有限公司 | Pickup device and pickup method |
CN115223912A (en) * | 2021-04-16 | 2022-10-21 | 先进科技新加坡有限公司 | Separating chips from tape by air ejection |
Also Published As
Publication number | Publication date |
---|---|
JP2024092928A (en) | 2024-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100377296C (en) | Peeling device for chip detachment | |
JP5772092B2 (en) | Semiconductor manufacturing method and semiconductor manufacturing apparatus | |
CN105575863B (en) | Plasma processing apparatus, substrate discharge mechanism and method | |
US20150279716A1 (en) | Apparatus and method for detaching chip | |
JP2010129588A (en) | Method for manufacturing semiconductor integrated circuit apparatus | |
JP2000353710A (en) | Manufacture of pellet pickup device and semiconductor device | |
JP5479546B2 (en) | Manufacturing method of semiconductor integrated circuit device | |
CN103258749A (en) | Die ejecting method and unit, die pickup method and pickup device | |
JP2000208447A (en) | Semiconductor manufacturing apparatus and manufacture of semiconductor device | |
JP2013065732A (en) | Die bonder and bonding method | |
TWI588928B (en) | Die pick-up method | |
JP2009289785A (en) | Manufacturing method of semiconductor integrated circuit device | |
TWI834450B (en) | Method for stripping die with pushing means and air control means | |
CN103311150B (en) | Semiconductor-fabricating device and the control method of semiconductor-fabricating device | |
JP2009253060A (en) | Manufacturing method of semiconductor integrated circuit device | |
JP2022075586A (en) | Device and method for transporting die in bonding installation | |
JP2020047871A (en) | Semiconductor manufacturing apparatus, push-up jig and manufacturing method of semiconductor device | |
TWI787043B (en) | Die transferring method for preventing enclosed bubble | |
JP2009071195A (en) | Semiconductor manufacturing apparatus and method for manufacturing semiconductor | |
US20190295878A1 (en) | Push-up device and push-up method for a semiconductor device | |
CN118315321A (en) | Grain stripping method by using ejection means and air pressure control means | |
JP4945339B2 (en) | Manufacturing method of semiconductor integrated circuit device | |
JP2007073778A (en) | Method and device for picking up semiconductor chip | |
JP2013065628A (en) | Die bonder and die pickup device and die pickup method | |
KR20090085262A (en) | Die attach equipment operating reverse pyramid type and operation method thereof |