TW201838065A - Pickup device and pickup method - Google Patents
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
本發明是有關於一種自片材（sheet）拾取半導體晶粒（die）的拾取裝置及其方法。The present invention relates to a pickup apparatus and method for picking up a semiconductor die from a sheet.
半導體晶粒是將8吋或12吋大小的晶圓（wafer）切斷成既定大小而製造。於所製造的晶圓的背面，安裝有於晶粒接合（die bonding）時於基板與半導體晶粒之間形成樹脂層的被稱為黏晶膜（Die Attach Film，DAF）的黏彈性膜。另外，為了於切斷晶圓時使所切斷的半導體晶粒不零亂，而於DAF的背面貼附切割片材（dicing sheet），自表面側藉由切割鋸（dicing saw）或雷射光線等將晶圓與DAF一併切斷。此時，貼附於背面的切割片材稍許被切入但並未被切斷，成為保持各半導體晶粒及DAF的狀態。然後，將所切斷的各半導體晶粒與DAF一併自切割片材逐一拾取，送至晶粒接合等後續工程。The semiconductor die is manufactured by cutting a wafer of 8 inches or 12 inches in size to a predetermined size. A viscoelastic film called a Die Attach Film (DAF) which forms a resin layer between the substrate and the semiconductor die during die bonding is mounted on the back surface of the wafer to be fabricated. In addition, in order to cut the wafer, the cut semiconductor die is not disordered, and a dicing sheet is attached to the back surface of the DAF, and a dicing saw or a laser beam is used from the surface side. Wait for the wafer to be cut off together with the DAF. At this time, the cut sheet attached to the back surface is slightly cut but not cut, and the state of each semiconductor crystal grain and DAF is maintained. Then, each of the cut semiconductor dies and the DAF are picked up one by one from the dicing sheet, and sent to a subsequent process such as die bonding.
關於將半導體晶粒與DAF一併自切割片材拾取的拾取裝置，已提出有如下拾取裝置：使半導體晶粒的周邊部自切割片材初期剝離後，使半導體晶粒的中央部自切割片材剝離，利用筒夾（collet）拾取半導體晶粒（例如參照專利文獻1）。該拾取裝置如下般動作。首先，於使圓筒狀的吸附平台的表面吸附切割片材且使筒夾吸附半導體晶粒的狀態下，使配置於吸附平台的中央部的初期剝離用支柱及頂出銷（eject pin）自吸附平台的表面向上突出，將半導體晶粒上推。另外，同時將吸附平台的內部設為真空而使半導體晶粒的周邊發生初期剝離（參照專利文獻1的圖4a、圖4b）。然後，於將吸附平台的內部設為真空的狀態下，使初期剝離用支柱下降至吸附平台的表面，使半導體晶粒的中央部自切割片材剝離（參照專利文獻1的圖6a、圖6b）。繼而，利用筒夾拾取半導體晶粒。 [現有技術文獻] [專利文獻]Regarding a pick-up device for picking up a semiconductor die and a DAF from a cut sheet, there has been proposed a pick-up device in which a peripheral portion of a semiconductor die is peeled off from the initial portion of the cut sheet, and a central portion of the semiconductor die is self-cut. The material is peeled off, and the semiconductor crystal grains are picked up by a collet (for example, refer to Patent Document 1). This pickup device operates as follows. First, in the state where the surface of the cylindrical adsorption platform is adsorbed and the semiconductor wafer is adsorbed by the collet, the initial peeling post and the eject pin disposed in the central portion of the adsorption platform are self-contained. The surface of the adsorption platform protrudes upward to push the semiconductor crystal grains up. In addition, at the same time, the inside of the adsorption stage is vacuumed to cause initial peeling of the periphery of the semiconductor crystal grain (see FIGS. 4a and 4b of Patent Document 1). Then, the initial peeling pillar is lowered to the surface of the adsorption stage, and the center portion of the semiconductor crystal grain is peeled off from the cut sheet (see FIGS. 6a and 6b of Patent Document 1). ). Then, the semiconductor die is picked up by the collet. [Prior Art Document] [Patent Literature]
[專利文獻1]美國專利第7,665,204號說明書[Patent Document 1] US Patent No. 7,665,204
[發明所欲解決之課題] 再者，近年來半導體晶粒逐漸變得非常薄，亦有例如20 μm左右的半導體晶粒。另一方面，切割片材的厚度為100 μm左右，故切割片材的厚度亦成為半導體晶粒的厚度的4倍～5倍。對於專利文獻1所記載的先前技術的拾取裝置而言，於將吸附平台的內部設為真空時，頂出銷之間的半導體晶粒及DAF追隨於切割片材的向下方的變形而向下方撓曲，並未於DAF與切割片材之間發生剝離，難以拾取薄半導體晶粒。[Problems to be Solved by the Invention] Further, in recent years, semiconductor crystal grains have become very thin, and semiconductor crystal grains of, for example, about 20 μm have been used. On the other hand, since the thickness of the cut sheet is about 100 μm, the thickness of the cut sheet is also 4 to 5 times the thickness of the semiconductor crystal grain. In the pick-up device of the prior art described in Patent Document 1, when the inside of the adsorption stage is set to a vacuum, the semiconductor crystal grains and the DAF between the ejector pins follow the downward deformation of the dicing sheet downward. The deflection does not cause peeling between the DAF and the cut sheet, and it is difficult to pick up thin semiconductor crystal grains.
因此，本發明的目的在於將經由黏彈性膜而貼附於片材表面的薄半導體晶粒與黏彈性膜一併自片材表面拾取。 [解決課題之手段]Accordingly, it is an object of the present invention to extract a thin semiconductor crystal grain attached to a surface of a sheet via a viscoelastic film together with a viscoelastic film from the surface of the sheet. [Means for solving the problem]
本發明的拾取裝置將經由黏彈性膜而貼附於片材表面的半導體晶粒與黏彈性膜一併自片材表面拾取，且所述拾取裝置的特徵在於具備：平台（stage），含有吸附片材的背面的吸附面；上推構件，配置於設於平台的吸附面的開口中，前端自吸附面突出並將片材的背面上推；以及開口壓力切換機構，將開口的開口壓力於接近真空的第一壓力與接近大氣壓的第二壓力之間切換；並且於將半導體晶粒與黏彈性膜一併拾取時，於將吸附面的吸附壓力設為接近真空的第三壓力且利用上推構件將片材的背面自吸附面上推的狀態下，使開口壓力以與黏彈性膜的黏彈性特性相應的既定頻率於第一壓力與第二壓力之間振動。The pick-up device of the present invention picks up a semiconductor die attached to a surface of a sheet via a viscoelastic film together with a viscoelastic film from the surface of the sheet, and the pick-up device is characterized by: a stage containing adsorption An adsorption surface of the back surface of the sheet; the push-up member is disposed in the opening of the adsorption surface provided on the platform, the front end protrudes from the adsorption surface and pushes the back surface of the sheet; and the opening pressure switching mechanism presses the opening pressure of the opening Switching between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure; and when the semiconductor crystal grains are picked up together with the viscoelastic film, the adsorption pressure of the adsorption surface is set to be close to the third pressure of the vacuum and utilized The push member vibrates between the first pressure and the second pressure at a predetermined frequency corresponding to the viscoelastic property of the viscoelastic film in a state where the push member pushes the back surface of the sheet from the adsorption surface.
於本發明的拾取裝置中，亦可根據黏彈性膜的弛緩時間使第一壓力與第二壓力之間的開口壓力的振動頻率變化。In the pick-up device of the present invention, the vibration frequency of the opening pressure between the first pressure and the second pressure may be changed according to the relaxation time of the viscoelastic film.
於本發明的拾取裝置中，亦可黏彈性膜的弛緩時間越長則越提高第一壓力與第二壓力之間的開口壓力的振動頻率。In the pick-up device of the present invention, the longer the relaxation time of the viscoelastic film, the higher the vibration frequency of the opening pressure between the first pressure and the second pressure.
於本發明的拾取裝置中，第一壓力與第二壓力之間的開口壓力的振動頻率亦可設為10 Hz至50 Hz。In the pickup device of the present invention, the vibration frequency of the opening pressure between the first pressure and the second pressure may be set to 10 Hz to 50 Hz.
於本發明的拾取裝置中，上推構件亦可包含：上頂銷組，包含將片材背面的遠離的多個位置上推的多個上頂銷；以及上頂塊，包含將各上頂銷之間及上頂銷組的外周側的片材背面上推的多個上頂柱；且上頂銷組的前端及上頂塊的前端分別於高於吸附面的第一位置與低於第一位置的第二位置之間移動，於將半導體晶粒與黏彈性膜一併拾取時，將吸附壓力設為第三壓力且將上頂銷組的前端及上頂塊的前端設為第一位置，使開口壓力以與黏彈性膜的黏彈性特性相應的既定頻率於第一壓力與第二壓力之間振動後，於將吸附壓力保持於第三壓力且將上頂銷組的前端保持於第一位置的狀態下，將上頂塊的前端設為第二位置，使開口壓力於第一壓力與第二壓力之間振動。In the picking device of the present invention, the push-up member may further include: an upper pin set including a plurality of upper pins that push up a plurality of positions away from the back side of the sheet; and an upper top block, including each top a plurality of upper top pillars pushed up between the pins and the back side of the sheet on the outer peripheral side of the upper pin group; and the front end of the upper pin group and the front end of the upper top block are respectively lower than the first position of the adsorption surface Moving between the second position of the first position, when the semiconductor die and the viscoelastic film are collectively picked up, the adsorption pressure is set to the third pressure and the front end of the upper pin group and the front end of the upper top block are set to a position for maintaining the opening pressure at a predetermined frequency corresponding to the viscoelastic property of the viscoelastic film between the first pressure and the second pressure, maintaining the adsorption pressure at the third pressure and maintaining the front end of the upper pin group In the state of the first position, the front end of the upper top block is set to the second position, and the opening pressure is vibrated between the first pressure and the second pressure.
於本發明的拾取裝置中，上推構件亦可包含：上頂銷組，包含將片材背面的遠離的多個位置上推的多個上頂銷；以及上頂塊，包含將各上頂銷之間及上頂銷組的外周側的片材背面上推的多個上頂柱；且上頂銷組的前端及上頂塊的前端分別於高於吸附面的第三位置與低於第三位置的第四位置之間移動，於將半導體晶粒與黏彈性膜一併拾取時，將吸附壓力設為第三壓力且將上頂銷組的前端及上頂塊的前端設為第三位置與第四位置之間的第五位置，使開口壓力以與黏彈性膜的黏彈性特性相應的既定頻率於第一壓力與第二壓力之間振動後，於將吸附壓力保持於第三壓力且將上頂塊的前端保持於第五位置的狀態下，將上頂銷組的前端設為第三位置，使開口壓力於第一壓力與第二壓力之間振動。In the picking device of the present invention, the push-up member may further include: an upper pin set including a plurality of upper pins that push up a plurality of positions away from the back side of the sheet; and an upper top block, including each top a plurality of upper top pillars pushed up between the pins and the back side of the sheet on the outer peripheral side of the upper pin group; and the front end of the upper pin group and the front end of the upper top block are respectively lower than the third position of the adsorption surface Moving between the fourth position of the third position, when the semiconductor die and the viscoelastic film are picked up together, the adsorption pressure is set to the third pressure and the front end of the upper pin group and the front end of the upper top block are set as the first a fifth position between the third position and the fourth position, wherein the opening pressure is maintained at a predetermined frequency corresponding to the viscoelastic property of the viscoelastic film between the first pressure and the second pressure, and the adsorption pressure is maintained at the third The front end of the upper pin group is set to the third position and the opening pressure is vibrated between the first pressure and the second pressure in a state where the pressure of the upper end block is maintained at the fifth position.
於本發明的拾取裝置中，上推構件亦可包含：上頂銷組，包含將片材背面的遠離的多個位置上推的多個上頂銷；以及上頂塊，包含將各上頂銷之間及上頂銷組的外周側的片材背面上推的多個上頂柱；且上頂銷組的前端及上頂塊的前端分別於高於吸附面的第三位置與低於第三位置的第四位置之間移動，於將半導體晶粒與黏彈性膜一併拾取時，將吸附壓力設為第三壓力且將上頂銷組的前端及上頂塊的前端設為第三位置與第四位置之間的第五位置，使開口壓力以與黏彈性膜的黏彈性特性相應的既定頻率於第一壓力與第二壓力之間振動後，於將吸附壓力保持於第三壓力的狀態下，將上頂銷組的前端設為第三位置，且將上頂塊的前端設為第四位置，使開口壓力於第一壓力與第二壓力之間振動。In the picking device of the present invention, the push-up member may further include: an upper pin set including a plurality of upper pins that push up a plurality of positions away from the back side of the sheet; and an upper top block, including each top a plurality of upper top pillars pushed up between the pins and the back side of the sheet on the outer peripheral side of the upper pin group; and the front end of the upper pin group and the front end of the upper top block are respectively lower than the third position of the adsorption surface Moving between the fourth position of the third position, when the semiconductor die and the viscoelastic film are picked up together, the adsorption pressure is set to the third pressure and the front end of the upper pin group and the front end of the upper top block are set as the first a fifth position between the third position and the fourth position, wherein the opening pressure is maintained at a predetermined frequency corresponding to the viscoelastic property of the viscoelastic film between the first pressure and the second pressure, and the adsorption pressure is maintained at the third In the state of the pressure, the front end of the upper pin group is set to the third position, and the front end of the upper block is set to the fourth position, and the opening pressure is vibrated between the first pressure and the second pressure.
於本發明的拾取裝置中，第四位置亦可設為與吸器面相同或較吸附面低的位置。In the pick-up device of the present invention, the fourth position may be set to be the same as or lower than the suction surface.
本發明的拾取方法將經由黏彈性膜而貼附於片材表面的半導體晶粒與黏彈性膜一併自片材表面拾取，且所述拾取方法的特徵在於：準備拾取裝置，該拾取裝置具備：平台，含有吸附片材的背面的吸附面；上推構件，配置於設於平台的吸附面的開口中，前端自吸附面突出並將片材的背面上推；以及開口壓力切換機構，將開口的開口壓力於接近真空的第一壓力與接近大氣壓的第二壓力之間切換；於將吸附面的吸附壓力設為接近真空的第三壓力且利用上推構件將片材的背面自吸附面上推的狀態下，使開口壓力以與黏彈性膜的黏彈性特性相應的既定頻率於第一壓力與第二壓力之間振動，將半導體晶粒與黏彈性膜一併拾取。The picking method of the present invention picks up a semiconductor die attached to a surface of a sheet via a viscoelastic film together with a viscoelastic film, and the picking method is characterized in that a pick-up device is provided, the pick-up device having a platform comprising an adsorption surface of a back surface of the adsorption sheet; a push-up member disposed in an opening of the adsorption surface provided on the platform, the front end protruding from the adsorption surface and pushing the back surface of the sheet; and an opening pressure switching mechanism The opening pressure of the opening is switched between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure; the adsorption pressure of the adsorption surface is set to a third pressure close to the vacuum and the back surface of the sheet is self-adsorbed by the push-up member In the push-up state, the opening pressure is vibrated between the first pressure and the second pressure at a predetermined frequency corresponding to the viscoelastic property of the viscoelastic film, and the semiconductor crystal grains are picked up together with the viscoelastic film.
於本發明的拾取方法中，亦可根據黏彈性膜的弛緩時間使第一壓力與第二壓力之間的開口壓力的振動頻率變化。In the picking method of the present invention, the vibration frequency of the opening pressure between the first pressure and the second pressure may be varied according to the relaxation time of the viscoelastic film.
於本發明的拾取方法中，亦可黏彈性膜的弛緩時間越長則越提高第一壓力與第二壓力之間的開口壓力的振動頻率。In the picking method of the present invention, the longer the relaxation time of the viscoelastic film, the higher the vibration frequency of the opening pressure between the first pressure and the second pressure.
於本發明的拾取方法中，第一壓力與第二壓力之間的開口壓力的振動頻率亦可設為10 Hz至50 Hz。 [發明的效果]In the picking method of the present invention, the vibration frequency of the opening pressure between the first pressure and the second pressure may also be set to 10 Hz to 50 Hz. [Effects of the Invention]
本發明可將經由黏彈性膜而貼附於片材表面的薄半導體晶粒與黏彈性膜一併自片材表面拾取。The present invention can pick up a thin semiconductor crystal grain attached to the surface of a sheet via a viscoelastic film together with a viscoelastic film from the surface of the sheet.
＜拾取裝置的構成＞ 以下，一面參照圖式一面對實施形態的拾取裝置100進行說明。本實施形態的拾取裝置100將經由黏彈性膜11而貼附於樹脂製的片材12的表面12a的半導體晶粒15與黏彈性膜11一併自片材12的表面12a拾取。<Configuration of Pickup Device> Hereinafter, the pickup device 100 according to the embodiment will be described with reference to the drawings. The pickup device 100 of the present embodiment picks up the semiconductor crystal grains 15 attached to the surface 12a of the resin sheet 12 via the viscoelastic film 11 together with the viscoelastic film 11 from the surface 12a of the sheet 12.
如圖1所示，本實施形態的拾取裝置100具備保持片材12的晶圓固持器10、吸附片材12的平台20、設於平台20的開口23中的上推構件30、設於平台20的罩殼（casing）21的內部且將上推構件30上下驅動的驅動機構50、拾取半導體晶粒15的筒夾18、真空泵（VAC）61以及進行拾取裝置100的驅動控制的控制部70。As shown in FIG. 1, the pick-up device 100 of the present embodiment includes a wafer holder 10 that holds the sheet 12, a stage 20 that adsorbs the sheet 12, a push-up member 30 that is provided in the opening 23 of the stage 20, and is provided on the platform. A drive mechanism 50 that drives the push-up member 30 up and down inside the casing 21 of 20, a collet 18 that picks up the semiconductor die 15, a vacuum pump (VAC) 61, and a control unit 70 that performs drive control of the pickup device 100 .
晶圓固持器10具有圓環狀的擴充環（expand ring）16、以及將安裝於片材12周邊的金屬製的環13固定於擴充環16的凸緣上的環按壓件17。片材12若設置於擴充環16上，則以擴充環16的上表面與凸緣面的階差程度沿著擴充環上部的曲面被拉伸，自片材12的中心朝向周圍的拉伸力發揮作用。片材12因該拉伸力而延伸，故貼附於片材12上的各半導體晶粒15之間與黏彈性膜11之間出現間隙14。另外，晶圓固持器10可藉由未圖示的移動機構而沿水平方向及上下方向移動。The wafer holder 10 has an annular expander ring 16 and a ring presser 17 that fixes the metal ring 13 attached to the periphery of the sheet 12 to the flange of the expander ring 16. When the sheet 12 is placed on the expansion ring 16, the degree of the difference between the upper surface of the expansion ring 16 and the flange surface is stretched along the curved surface of the upper portion of the expansion ring, and the tensile force from the center of the sheet 12 toward the periphery. Play a role. Since the sheet 12 extends due to the tensile force, a gap 14 is formed between the respective semiconductor crystal grains 15 attached to the sheet 12 and the viscoelastic film 11. Further, the wafer holder 10 can be moved in the horizontal direction and the vertical direction by a moving mechanism (not shown).
如圖2所示，平台20為圓筒形，且於上表面形成有吸附片材12的背面12b的吸附面22。於吸附面22的中央，設有與罩殼21的內部連通的四角開口23，於開口23中配置有自吸附面22突出並將片材12的背面12b上推的上推構件30。上推構件30包含上頂銷組32及上頂塊34。上頂銷組32包含將片材12的背面12b的遠離的多個位置上推的針狀的多個上頂銷31。上頂塊34包含將各上頂銷31之間及上頂銷組32的外周側的片材12的背面12b上推的多個四角柱狀的上頂柱33。於開口23的周圍，以將開口23包圍的方式雙重地設有吸附槽26。於各吸附槽26中設有吸附孔27。As shown in FIG. 2, the stage 20 has a cylindrical shape, and an adsorption surface 22 for adsorbing the back surface 12b of the sheet 12 is formed on the upper surface. A four-corner opening 23 communicating with the inside of the casing 21 is provided at the center of the adsorption surface 22, and a push-up member 30 that protrudes from the adsorption surface 22 and pushes up the back surface 12b of the sheet 12 is disposed in the opening 23. The push up member 30 includes an upper top pin set 32 and an upper top block 34. The upper top pin set 32 includes a plurality of needle-shaped upper top pins 31 that push up a plurality of positions away from the back surface 12b of the sheet 12. The upper top block 34 includes a plurality of quadrangular upper top pillars 33 that push up the back surface 12b of the sheet 12 on the outer peripheral side between the upper top pins 31 and the upper top pin group 32. An adsorption groove 26 is provided in a double manner around the opening 23 so as to surround the opening 23. Adsorption holes 27 are provided in each of the adsorption tanks 26.
如圖1所示，於平台20的罩殼21的內部，收納有將構成上推構件30的上頂銷組32及上頂塊34上下驅動的驅動機構50。驅動機構50具備馬達51、將馬達51的旋轉移動變換為上下移動的凸輪52、與凸輪52接觸的凸輪從動件53、安裝有凸輪從動件53且藉由馬達51的旋轉而沿上下方向移動的桿54、以及將桿54的上下移動變換為上頂銷組32及上頂塊34的上下移動的變換機構55。As shown in FIG. 1, a drive mechanism 50 that drives the upper top pin group 32 and the upper top block 34 constituting the push-up member 30 up and down is housed inside the casing 21 of the stage 20. The drive mechanism 50 includes a motor 51, a cam 52 that converts the rotational movement of the motor 51 into a vertical movement, a cam follower 53 that comes into contact with the cam 52, and a cam follower 53 that is mounted in the up and down direction by the rotation of the motor 51. The moving rod 54 and the shifting mechanism 55 for converting the vertical movement of the rod 54 into the upper and lower movements of the upper top pin group 32 and the upper top block 34 are performed.
筒夾18於前端具有吸附保持半導體晶粒15的保持面18a。於保持面18a設有吸引孔19。筒夾18藉由筒夾驅動部80而沿水平方向及上下方向移動。The collet 18 has a holding surface 18a that adsorbs and holds the semiconductor die 15 at the front end. A suction hole 19 is provided in the holding surface 18a. The collet 18 is moved in the horizontal direction and the vertical direction by the collet driving unit 80.
罩殼21的內部通過配管63而與真空泵61連通。平台20的開口23與吸附面22及罩殼21的內部連通，故真空泵61通過配管63、罩殼21而與開口23連接。另外，吸附孔27亦通過配管64而與真空泵61連通。筒夾18的吸引孔19通過配管65而與真空泵61連通。另外，於各配管63、64、65中配置有三向閥67、三向閥68、三向閥69。於真空泵61的吸入管66中安裝有檢測真空泵61的吸引壓力的壓力感測器（pressure sensor）62。三向閥67、三向閥68、三向閥69可將連通方向切換至真空泵側與大氣開放側，故於切換至真空泵側的情形時，與真空泵61連通而將罩殼21、吸附槽26、筒夾18的吸引孔19設為真空。反之於設為大氣開放側的情形時，與大氣開放端連通而對罩殼21、吸附槽26、筒夾18的吸引孔19導入空氣，破壞真空。三向閥67經由配管63而連接於罩殼21並將罩殼21的開口23的壓力P於真空與大氣壓之間切換，與技術方案所記載的開口壓力切換機構相對應。再者，於三向閥67的大氣開放側，亦可連接較大氣壓高的壓縮空氣源並將罩殼21的開口23的壓力P於真空與較大氣壓高的壓力之間切換。The inside of the casing 21 communicates with the vacuum pump 61 through a pipe 63. Since the opening 23 of the stage 20 communicates with the adsorption surface 22 and the inside of the casing 21, the vacuum pump 61 is connected to the opening 23 through the pipe 63 and the casing 21. Further, the adsorption hole 27 is also in communication with the vacuum pump 61 through the pipe 64. The suction hole 19 of the collet 18 communicates with the vacuum pump 61 through the pipe 65. Further, a three-way valve 67, a three-way valve 68, and a three-way valve 69 are disposed in each of the pipes 63, 64, and 65. A pressure sensor 62 that detects the suction pressure of the vacuum pump 61 is attached to the suction pipe 66 of the vacuum pump 61. The three-way valve 67, the three-way valve 68, and the three-way valve 69 can switch the communication direction to the vacuum pump side and the atmosphere open side. Therefore, when switching to the vacuum pump side, the vacuum pump 61 is connected to the casing 21 and the adsorption tank 26 . The suction hole 19 of the collet 18 is set to a vacuum. On the other hand, when it is set to the open side of the atmosphere, air is introduced into the casing 21, the adsorption tank 26, and the suction hole 19 of the collet 18, and the vacuum is broken. The three-way valve 67 is connected to the casing 21 via the pipe 63, and the pressure P of the opening 23 of the casing 21 is switched between vacuum and atmospheric pressure, and corresponds to the opening pressure switching mechanism described in the claims. Further, on the open side of the atmosphere of the three-way valve 67, a compressed air source having a large atmospheric pressure may be connected and the pressure P of the opening 23 of the casing 21 may be switched between a vacuum and a pressure high.
控制部70為包含進行運算處理的中央處理單元（Central Processing Unit，CPU）71、儲存控制程式或資料的記憶體72以及設備/感測器介面73，利用資料匯流排74將CPU 71、記憶體72及設備/感測器介面73連接的電腦。驅動上推構件30的驅動機構50的馬達51、真空泵61、筒夾驅動部80、三向閥67、三向閥68、三向閥69、未圖示的晶圓固持器10的移動機構連接於設備/感測器介面73，藉由控制部70的指令而被驅動。另外，壓力感測器62連接於設備/感測器介面73，檢測信號是由控制部70進行處理。The control unit 70 includes a central processing unit (CPU) 71 that performs arithmetic processing, a memory 72 that stores a control program or data, and a device/sensor interface 73. The CPU 71 and the memory are used by the data bus 74. 72 and the computer connected to the device/sensor interface 73. The motor 51 that drives the drive mechanism 50 of the push-up member 30, the vacuum pump 61, the collet drive unit 80, the three-way valve 67, the three-way valve 68, the three-way valve 69, and the moving mechanism of the wafer holder 10 (not shown) are connected. The device/sensor interface 73 is driven by an instruction from the control unit 70. Further, the pressure sensor 62 is connected to the device/sensor interface 73, and the detection signal is processed by the control unit 70.
＜半導體晶粒、黏彈性膜及片材的積層體的振動響應＞ 如圖3所示，半導體晶粒15經由黏彈性膜11而貼附於片材12，故半導體晶粒15、黏彈性膜11及片材12成為圖3所示般的積層體。再者，圖3中符號15a、符號11a、符號12a表示半導體晶粒15、黏彈性膜11、片材12的各表面，符號15b、符號11b、符號12b表示半導體晶粒15、黏彈性膜11、片材12的各背面。半導體晶粒15的厚度較片材12的厚度薄，半導體晶粒15的彎曲剛性小於片材12。此處，若將圖1、圖2所示的平台20的開口23的壓力P設為真空，則片材12如圖3所示般向下凸地彎曲變形。彎曲剛性小於片材12的半導體晶粒15及黏彈性膜11追隨於片材12而向下凸地彎曲變形。<Vibration Response of Laminate of Semiconductor Die, Viscoelastic Film, and Sheet> As shown in FIG. 3, the semiconductor crystal grain 15 is attached to the sheet 12 via the viscoelastic film 11, so that the semiconductor crystal grain 15 and the viscoelastic film 11 and the sheet 12 are laminated bodies as shown in Fig. 3 . Further, reference numeral 15a, reference numeral 11a, and reference numeral 12a in Fig. 3 denote respective surfaces of the semiconductor crystal grain 15, the viscoelastic film 11, and the sheet 12, and reference numerals 15b, 11b, and 12b denote semiconductor crystal grains 15, and a viscoelastic film 11. The back sides of the sheet 12. The thickness of the semiconductor crystal grains 15 is thinner than the thickness of the sheet 12, and the bending rigidity of the semiconductor crystal grains 15 is smaller than that of the sheet 12. Here, when the pressure P of the opening 23 of the stage 20 shown in FIGS. 1 and 2 is set to a vacuum, the sheet 12 is bent and deformed downward as shown in FIG. The semiconductor crystal grains 15 and the viscoelastic film 11 having a bending rigidity smaller than that of the sheet 12 follow the sheet 12 and are convexly bent and deformed downward.
發生此種變形的半導體晶粒15、黏彈性膜11及片材12的積層體可以圖4所示般的物理模型的形式而操作。如圖4所示，以個體形式作為彈性體的半導體晶粒15是以質量41與表示彎曲剛性的彈簧42的組合表示。同樣地，以個體形式作為彈性體的片材12亦如圖4所示，能以質量46與表示彎曲剛性的彈簧47的組合表示。另一方面，作為黏彈性體的黏彈性膜11可表示為將質量43、表示彎曲剛性的彈簧44及表示黏性的阻尼器（dashpot）45串聯連接。而且，如圖4所示，半導體晶粒15、黏彈性膜11及片材12的積層體可以將質量41及彈簧42、質量43及彈簧44及阻尼器45、以及質量46及彈簧47串聯連接的物理模型的形式而操作。The laminated body of the semiconductor crystal grain 15, the viscoelastic film 11, and the sheet 12 in which such deformation occurs can be operated in the form of a physical model as shown in FIG. As shown in FIG. 4, the semiconductor crystal grains 15 in an individual form as an elastic body are represented by a combination of a mass 41 and a spring 42 indicating bending rigidity. Similarly, the sheet 12, which is an elastomer in an individual form, can also be represented by a combination of a mass 46 and a spring 47 indicating bending rigidity, as shown in FIG. On the other hand, the viscoelastic film 11 as a viscoelastic body can be represented by connecting a mass 43, a spring 44 indicating bending rigidity, and a dashpot 45 indicating viscosity. Moreover, as shown in FIG. 4, the laminated body of the semiconductor die 15, the viscoelastic film 11, and the sheet 12 can be connected in series with the mass 41 and the spring 42, the mass 43 and the spring 44 and the damper 45, and the mass 46 and the spring 47. Operates in the form of a physical model.
若使施加於圖4所示的片材12的下端的壓力P振動，則對物理模型施加壓力P×受壓面積A的振動外力。若於圖4所示的物理模型的下端輸入如圖5中以實線所示般振動的壓力P作為外力，則固體的半導體晶粒15或片材12對應於壓力P的時間變化而無延遲地變化，相對於此，黏彈性膜11的移位相對於壓力P的時間變化而延遲地變化。因此，於片材12與黏彈性膜11之間產生移位差。藉由該移位差，如圖5的一點鏈線所示，產生使片材12的表面12a與黏彈性膜11的表面11b之間剝離的方向的剝離力Fp。片材12與黏彈性膜11之間的剝離力Fp根據作為外力的壓力P的振動的頻率f及黏彈性膜11的弛緩時間τ而變化。When the pressure P applied to the lower end of the sheet 12 shown in Fig. 4 is vibrated, a vibration external force of the pressure P × the pressure receiving area A is applied to the physical model. If the pressure P vibrating as shown by the solid line in FIG. 5 is input as the external force at the lower end of the physical model shown in FIG. 4, the solid semiconductor crystal grain 15 or the sheet 12 corresponds to the time change of the pressure P without delay. In contrast, the displacement of the viscoelastic film 11 is delayed with respect to the temporal change of the pressure P. Therefore, a displacement difference occurs between the sheet 12 and the viscoelastic film 11. By this displacement difference, as shown by the one-dot chain line of FIG. 5, the peeling force Fp in the direction which peeled the surface 12a of the sheet 12 and the surface 11b of the viscoelastic film 11 arises. The peeling force Fp between the sheet 12 and the viscoelastic film 11 changes in accordance with the frequency f of the vibration of the pressure P as the external force and the relaxation time τ of the viscoelastic film 11.
因此，若根據黏彈性膜11的弛緩時間τ來選擇適當的壓力P的振動的頻率f，則可如圖5所示，於自壓力P最低的時刻t0延遲時間Δt的時刻t1使剝離力Fp達到最大。Therefore, when the frequency f of the vibration of the appropriate pressure P is selected in accordance with the relaxation time τ of the viscoelastic film 11, the peeling force Fp can be made at the time t1 of the delay time Δt from the time t0 at which the pressure P is lowest as shown in Fig. 5 . to reach maximum.
關於圖5所示的時間Δt，黏彈性膜11的弛緩時間τ越變長，即黏彈性膜11的特性越接近彈性特性，則所述時間Δt越變短，而黏彈性膜11的弛緩時間τ越變短，即黏彈性膜11的特性越接近黏性特性，則所述時間Δt越變長。因此，於黏彈性膜11的弛緩時間τ長的情形時將壓力P的振動的頻率f設定得高，且於黏彈性膜11的弛緩時間τ短的情形時將壓力P的振動的頻率f設定得低，藉此可於自壓力P最低的時刻t0延遲時間Δt的時刻t1獲得大的剝離力Fp。With respect to the time Δt shown in FIG. 5, the flaccid time τ of the viscoelastic film 11 becomes longer, that is, the closer the characteristic of the viscoelastic film 11 is to the elastic property, the shorter the time Δt is, and the relaxation time of the viscoelastic film 11 is. The shorter the τ is, that is, the closer the characteristic of the viscoelastic film 11 is to the viscous property, the longer the time Δt is. Therefore, when the relaxation time τ of the viscoelastic film 11 is long, the frequency f of the vibration of the pressure P is set high, and when the relaxation time τ of the viscoelastic film 11 is short, the frequency f of the vibration of the pressure P is set. It is low, whereby a large peeling force Fp can be obtained at time t1 at which the time Δt is delayed from the time t0 at which the pressure P is lowest.
此處，黏彈性膜11的弛緩時間τ表示黏彈性膜11的黏彈性特性，為利用通常的黏彈性測定裝置（流變儀）所測定的物性值。根據發明者的研究得知，於黏彈性膜11的弛緩時間τ為10（ms）至20（ms）的情形時，藉由將壓力P的振動的頻率f設為10 Hz～50 Hz，可獲得大的剝離力Fp。更佳為藉由將壓力P的振動的頻率f設為10 Hz～40 Hz，可獲得更大的剝離力Fp。進而佳為藉由將壓力P的振動的頻率f設為10 Hz～30 Hz，可獲得進而大的剝離力Fp。進而更佳為藉由將壓力P的振動的頻率f設為20 Hz，可獲得更大的剝離力Fp。再者，將壓力P的振動的頻率f設為20 Hz為一例，不限於此。作為其他態樣，壓力P的振動的頻率f各為10 Hz、11 Hz、12 Hz、13 Hz、14 Hz、15 Hz、16 Hz、17 Hz、18 Hz、19 Hz、20 Hz、21 Hz、22 Hz、23 Hz、24 Hz、25 Hz、26 Hz、27 Hz、28 Hz、29 Hz、30 Hz、31 Hz、32 Hz、33 Hz、34 Hz、35 Hz、36 Hz、37 Hz、38 Hz、39 Hz、40 Hz、41 Hz、42 Hz、43 Hz、44 Hz、45 Hz、46 Hz、47 Hz、48 Hz、49 Hz、50 Hz，亦可為該些頻率的任意兩個的範圍內。Here, the relaxation time τ of the viscoelastic film 11 indicates the viscoelastic property of the viscoelastic film 11, and is a physical property value measured by a usual viscoelasticity measuring device (rheometer). According to the study by the inventors, when the relaxation time τ of the viscoelastic film 11 is 10 (ms) to 20 (ms), the frequency f of the vibration of the pressure P is set to 10 Hz to 50 Hz. A large peel force Fp is obtained. More preferably, a larger peeling force Fp can be obtained by setting the frequency f of the vibration of the pressure P to 10 Hz to 40 Hz. Further, it is preferable to obtain a further large peeling force Fp by setting the frequency f of the vibration of the pressure P to 10 Hz to 30 Hz. Further, it is more preferable to obtain a larger peeling force Fp by setting the frequency f of the vibration of the pressure P to 20 Hz. In addition, the frequency f of the vibration of the pressure P is set to 20 Hz as an example, and is not limited to this. As other aspects, the frequency f of the vibration of the pressure P is 10 Hz, 11 Hz, 12 Hz, 13 Hz, 14 Hz, 15 Hz, 16 Hz, 17 Hz, 18 Hz, 19 Hz, 20 Hz, 21 Hz, 22 Hz, 23 Hz, 24 Hz, 25 Hz, 26 Hz, 27 Hz, 28 Hz, 29 Hz, 30 Hz, 31 Hz, 32 Hz, 33 Hz, 34 Hz, 35 Hz, 36 Hz, 37 Hz, 38 Hz 39 Hz, 40 Hz, 41 Hz, 42 Hz, 43 Hz, 44 Hz, 45 Hz, 46 Hz, 47 Hz, 48 Hz, 49 Hz, 50 Hz, or any two of these frequencies .
＜對拾取裝置的應用＞ 如以上所說明，若對半導體晶粒15、黏彈性膜11及片材12的積層體以與黏彈性膜11的弛緩時間τ相應的既定頻率f施加壓力P的振動，則可於黏彈性膜11與片材12之間產生大的剝離力Fp。本實施形態的拾取裝置100應用該原理，於將半導體晶粒15與黏彈性膜11一併拾取時，使開口23的壓力P以既定的頻率f於接近真空的第一壓力P1與接近大氣壓的第二壓力P2之間振動，藉此於黏彈性膜11與片材12之間產生大的剝離力Fp而自片材12拾取半導體晶粒15及黏彈性膜11。再者，第二壓力P2只要為接近大氣壓的壓力，則除了與大氣壓相同的壓力以外，包括略高於大氣壓的壓力及略低於大氣壓的壓力。<Application to the Pickup Device> As described above, when the laminated body of the semiconductor crystal grain 15, the viscoelastic film 11, and the sheet 12 is subjected to the vibration of the pressure P at a predetermined frequency f corresponding to the relaxation time τ of the viscoelastic film 11, Then, a large peeling force Fp is generated between the viscoelastic film 11 and the sheet 12. In the pick-up device 100 of the present embodiment, when the semiconductor die 15 and the viscoelastic film 11 are collectively picked up, the pressure P of the opening 23 is set to a predetermined frequency f at a first pressure P1 close to the vacuum and near atmospheric pressure. The second pressure P2 vibrates, whereby a large peeling force Fp is generated between the viscoelastic film 11 and the sheet 12, and the semiconductor crystal grains 15 and the viscoelastic film 11 are picked up from the sheet 12. Further, the second pressure P2 is a pressure close to atmospheric pressure, and includes a pressure slightly higher than atmospheric pressure and a pressure slightly lower than atmospheric pressure, in addition to the same pressure as atmospheric pressure.
此處，所謂使開口23的壓力P於接近真空的第一壓力P1與接近大氣壓的第二壓力P2之間使壓力P振動，只要壓力P的第一壓力P1與第二壓力P2之間的振動為一個週期以上即可，例如是指賦予一次以上的如下的壓力P的變動：使開口23的壓力P自接近大氣壓的第二壓力P2降低至接近真空的第一壓力P1後，回到接近大氣壓的第二壓力P2。Here, the pressure P of the opening 23 is caused to vibrate between the first pressure P1 close to the vacuum and the second pressure P2 close to the atmospheric pressure as long as the vibration between the first pressure P1 and the second pressure P2 of the pressure P For example, it means that the pressure P of one or more times is changed by lowering the pressure P of the opening 23 from the second pressure P2 close to the atmospheric pressure to the first pressure P1 close to the vacuum, and returning to the near atmospheric pressure. The second pressure P2.
＜拾取裝置的動作＞ 以下，一面參照圖7至圖10一面對拾取裝置100的動作進行說明。以下的說明中，將壓力振動的頻率f設為20 Hz進行說明。<Operation of Pickup Device> Hereinafter, an operation of the pickup device 100 will be described with reference to FIGS. 7 to 10 . In the following description, the frequency f of the pressure vibration is set to 20 Hz.
如圖7所示，控制部70藉由未圖示的移動機構而調整晶圓固持器10的水平方向及上下方向的位置，使貼附有半導體晶粒15及黏彈性膜11的片材12的背面12b與平台20的吸附面22接觸，半導體晶粒15及黏彈性膜11的水平方向的位置成為開口23的正上方。繼而，控制部70將三向閥68設為真空泵側，藉由真空泵61使平台20的吸附槽26的壓力降低，將片材12的背面12b吸附固定於吸附面22。於該狀態下，上頂銷31、上頂柱33的各前端31a、前端33a成為與吸附面22相同面的第二位置。As shown in FIG. 7, the control unit 70 adjusts the position of the wafer holder 10 in the horizontal direction and the vertical direction by a moving mechanism (not shown) so that the semiconductor wafer 15 and the viscoelastic film 11 are attached to the sheet 12 The back surface 12b is in contact with the adsorption surface 22 of the stage 20, and the position of the semiconductor crystal grain 15 and the viscoelastic film 11 in the horizontal direction is directly above the opening 23. Then, the control unit 70 sets the three-way valve 68 to the vacuum pump side, and reduces the pressure of the adsorption tank 26 of the stage 20 by the vacuum pump 61, thereby adsorbing and fixing the back surface 12b of the sheet 12 to the adsorption surface 22. In this state, the front end 31a and the front end 33a of the upper top pin 31 and the upper top post 33 are in the second position on the same surface as the suction surface 22.
繼而，控制部70於圖10所示的時刻t1將三向閥67設為真空泵側，藉由真空泵61使平台20的開口23的壓力P自接近大氣壓的第二壓力P2開始降低。另外，控制部70於開口23的壓力開始降低的大致同時，如圖8所示，藉由驅動機構50使上頂銷組32、上頂塊34的各上頂銷31、各上頂柱33的各前端31a、前端33a上升至較吸附面22高出高度H1的第一位置。進而，控制部70將三向閥69設為真空泵側，使筒夾18的吸引孔19的壓力降低。如圖8所示，由於開口23周邊的片材12被吸附固定於吸附面22，故藉由上頂銷31、上頂柱33的各前端31a、前端33a的上升而將片材12傾斜向下方拉伸。另外，片材12藉由開口23的壓力P而被向下方拉伸。Then, the control unit 70 sets the three-way valve 67 to the vacuum pump side at time t1 shown in FIG. 10, and the pressure P of the opening 23 of the stage 20 is lowered by the vacuum pump 61 from the second pressure P2 close to the atmospheric pressure. Further, the control unit 70 substantially simultaneously reduces the pressure of the opening 23, and as shown in FIG. 8, the upper top pin group 32, the upper top pins 31 of the upper top block 34, and the upper top posts 33 are driven by the drive mechanism 50. Each of the front end 31a and the front end 33a rises to a first position higher than the suction surface 22 by a height H1. Further, the control unit 70 sets the three-way valve 69 to the vacuum pump side to lower the pressure of the suction hole 19 of the collet 18. As shown in FIG. 8, since the sheet 12 around the opening 23 is adsorbed and fixed to the adsorption surface 22, the sheet 12 is inclined by the rising of the front end 31a and the front end 33a of the upper top pin 31 and the upper top post 33. Stretch below. Further, the sheet 12 is stretched downward by the pressure P of the opening 23.
此時，半導體晶粒15藉由吸引孔19的真空而吸附於筒夾18的保持面18a。然而，於使開口23的壓力P自接近大氣壓的第二壓力P2降低至接近真空的第一壓力P1的圖10的時刻t1至時刻t2之間，半導體晶粒15離開筒夾18的保持面18a，半導體晶粒15及黏彈性膜11如圖3所示般追隨於片材12而向下側彎曲。因此，黏彈性膜11與片材12並未剝離。然而，於筒夾18的保持面18a為橡膠等彈性體的情形時，由於半導體晶粒15薄，故以稍許的按壓力便使半導體晶粒15的外周部如圖3所示般彎曲變形為凸狀，產生剝離阻力。於該情形時，筒夾18以離半導體晶粒15稍許的間隙於空中待機。即便為筒夾18未與半導體晶粒15接觸的狀態，若對本案的剝離製程不造成任何影響而完成剝離，則半導體晶粒15被吸引吸附於筒夾18。At this time, the semiconductor crystal grains 15 are adsorbed to the holding surface 18a of the collet 18 by the vacuum of the suction holes 19. However, the semiconductor die 15 is separated from the holding face 18a of the collet 18 by reducing the pressure P of the opening 23 from the second pressure P2 close to atmospheric pressure to the time t1 to the time t2 of FIG. 10 close to the first pressure P1 of the vacuum. As shown in FIG. 3, the semiconductor crystal grain 15 and the viscoelastic film 11 follow the sheet 12 and are bent downward. Therefore, the viscoelastic film 11 and the sheet 12 are not peeled off. However, when the holding surface 18a of the collet 18 is an elastic body such as rubber, since the semiconductor crystal grain 15 is thin, the outer peripheral portion of the semiconductor crystal grain 15 is bent and deformed as shown in FIG. 3 with a slight pressing force. Convex, resulting in peeling resistance. In this case, the collet 18 stands by in the air with a slight gap from the semiconductor die 15. Even in a state where the collet 18 is not in contact with the semiconductor die 15, if the peeling process of the present invention does not cause any influence and the peeling is completed, the semiconductor die 15 is attracted and adsorbed to the collet 18.
於開口23的壓力P於圖10所示的時刻t2到達接近真空的第一壓力P1後，控制部70將三向閥67切換至大氣開放側而將空氣導入至罩殼21的內部。藉此，開口23的壓力P自時刻t2的第一壓力P1向接近大氣壓的第二壓力P2急速上升，於時刻t3回到接近大氣壓的第二壓力P2。After the pressure P of the opening 23 reaches the first pressure P1 close to the vacuum at the time t2 shown in FIG. 10, the control unit 70 switches the three-way valve 67 to the atmosphere opening side to introduce the air into the inside of the casing 21. Thereby, the pressure P of the opening 23 rapidly rises from the first pressure P1 at the time t2 to the second pressure P2 near the atmospheric pressure, and returns to the second pressure P2 close to the atmospheric pressure at the time t3.
拾取裝置100中，以如下方式調整真空泵61的空氣吸引速度及三向閥67對開口23的真空開放速度：如圖10所示，自開口23的壓力P開始降低的時刻t1起，至開口23的壓力P到達接近真空的第一壓力P1，並再次回到第二壓力P2的時刻t3為止的時間Δt2（＝t3－t1），成為作為既定週期的20 Hz的一週期即50（ms）＝（1/20 Hz×1000）。In the pickup device 100, the air suction speed of the vacuum pump 61 and the vacuum opening speed of the three-way valve 67 to the opening 23 are adjusted as follows: as shown in FIG. 10, from the time t1 at which the pressure P of the opening 23 starts to decrease, to the opening 23 The pressure P reaches the first pressure P1 close to the vacuum, and returns to the time Δt2 (= t3 - t1) at the time t3 of the second pressure P2 again, and becomes a cycle of 20 Hz which is a predetermined period, that is, 50 (ms) = (1/20 Hz × 1000).
因此，如圖10所示，開口23的壓力P到達接近真空的第二壓力P2後，於Δt1時間後於黏彈性膜11與片材12之間產生最大的剝離力Fp。藉由該剝離力Fp，於時刻t2至時刻t3之間，即如圖8所示於真空破壞時間的期間中，於黏彈性膜11的周邊部與片材12之間發生初期剝離。Therefore, as shown in FIG. 10, after the pressure P of the opening 23 reaches the second pressure P2 close to the vacuum, the maximum peeling force Fp is generated between the viscoelastic film 11 and the sheet 12 after Δt1 time. By the peeling force Fp, initial peeling occurs between the peripheral portion of the viscoelastic film 11 and the sheet 12 between the time t2 and the time t3, that is, during the vacuum breakage time as shown in FIG.
繼而，控制部70再次將三向閥67設為真空泵側，藉由真空泵61使平台20的開口23的壓力P自接近大氣壓的第二壓力P2開始降低。另外，控制部70於開口23的壓力P開始降低的大致同時，如圖9所示，於藉由驅動機構50將上頂銷31的各前端31a的位置保持於第一位置的狀態下，使上頂柱33的各前端33a降低至與吸附面22相同高度，即較第一位置低高度H1的第二位置。藉此，被上頂柱33上推的片材12的部分藉由開口23的比大氣壓低的壓力而被向下方拉伸並向下方彎曲。Then, the control unit 70 again sets the three-way valve 67 to the vacuum pump side, and the vacuum pump 61 lowers the pressure P of the opening 23 of the stage 20 from the second pressure P2 close to the atmospheric pressure. Further, the control unit 70 causes the position of each of the distal ends 31a of the upper pins 31 to be maintained at the first position by the drive mechanism 50 while the pressure P of the opening 23 starts to decrease, as shown in FIG. Each of the front ends 33a of the upper top pillars 33 is lowered to the same height as the suction surface 22, that is, the second position having a lower height H1 than the first position. Thereby, the portion of the sheet 12 pushed up by the upper top pillar 33 is pulled downward by the pressure of the opening 23 at a pressure lower than the atmospheric pressure, and is bent downward.
此時，半導體晶粒15、黏彈性膜11亦追隨於片材12而向下方彎曲。於該狀態下，被上頂柱33上推的片材12的部分的黏彈性膜11與片材12還未剝離。At this time, the semiconductor crystal grain 15 and the viscoelastic film 11 also follow the sheet 12 and are bent downward. In this state, the viscoelastic film 11 of the portion of the sheet 12 pushed up by the upper top pillar 33 and the sheet 12 are not peeled off.
繼而，於開口23的壓力P到達接近真空的第一壓力P1後，控制部70將三向閥67切換至大氣開放側而將空氣導入至罩殼21的內部。藉此，開口23的壓力P自第一壓力P1向接近大氣壓的第二壓力P2上升而回到接近大氣壓的第二壓力P2。Then, after the pressure P of the opening 23 reaches the first pressure P1 close to the vacuum, the control unit 70 switches the three-way valve 67 to the atmosphere open side to introduce the air into the inside of the casing 21. Thereby, the pressure P of the opening 23 rises from the first pressure P1 to the second pressure P2 close to the atmospheric pressure and returns to the second pressure P2 which is close to the atmospheric pressure.
於圖9的狀態下，關於使開口23的壓力P自第二壓力P2降低至第一壓力P1後回到第二壓力P2為止的時間Δt2，亦可與上文中於圖8的狀態下使開口23的壓力P於第二壓力P2與第一壓力P1之間以頻率20 Hz振動同樣地，以所述時間Δt2成為20 Hz的一週期即50（ms）＝（1/20 Hz×1000）的方式調整真空泵61的空氣吸引速度及三向閥67對開口23的真空開放速度，或亦能以所述時間Δt2成為較50（ms）更長的時間的方式進行調整。In the state of FIG. 9, the time Δt2 until the pressure P of the opening 23 is lowered from the second pressure P2 to the first pressure P1 and then returned to the second pressure P2 can also be made to the opening in the state of FIG. The pressure P of 23 is vibrated at a frequency of 20 Hz between the second pressure P2 and the first pressure P1, and the period Δt2 becomes a period of 20 Hz, that is, 50 (ms) = (1/20 Hz × 1000). The air suction speed of the vacuum pump 61 and the vacuum opening speed of the three-way valve 67 to the opening 23 are adjusted, or the time Δt2 can be adjusted to be longer than 50 (ms).
於將時間Δt2調整為50（ms）的情形時，與參照圖8所說明同樣地，於開口23的壓力P自第一壓力P1回到第二壓力P2的期間中於片材12與黏彈性膜11之間產生最大的剝離力Fp，藉由該最大的剝離力Fp於被上頂柱33上推的片材12的部分產生片材12與黏彈性膜11之間的剝離。When the time Δt2 is adjusted to 50 (ms), the sheet 12 and the viscoelasticity are applied to the sheet 12 during the period from the first pressure P1 to the second pressure P2 in the same manner as described with reference to FIG. 8 . A maximum peeling force Fp is generated between the films 11, and the peeling between the sheet 12 and the viscoelastic film 11 is caused by the portion of the sheet 12 pushed up by the upper top pillar 33 by the maximum peeling force Fp.
另一方面，於使時間Δt2較50（ms）更長的情形時，例如於自第二壓力P2到達第一壓力P1後，空開稍許時間後開始破壞真空的情形時，於回到接近大氣壓的第二壓力P2的過程中將開口23的壓力P保持於第二壓力P2的期間中，藉由上頂銷31之間的部分的半導體晶粒15因彈性力而欲由向下凸的彎曲變形回到原本的平面狀態的力，於片材12與黏彈性膜11之間發生剝離。其原因在於：於上頂銷31之間的區域中，半導體晶粒15藉由上頂銷31的前端31a而如兩端固定梁般受到支持，故剛性大於圖8所示的周邊部，因此藉由半導體晶粒15的剛性而促進片材12與黏彈性膜11的剝離。On the other hand, when the time Δt2 is longer than 50 (ms), for example, after the second pressure P2 reaches the first pressure P1, after the vacuum is started for a short time, the vacuum is returned to the near atmospheric pressure. During the second pressure P2, the pressure P of the opening 23 is maintained in the period of the second pressure P2, and the portion of the semiconductor crystal grain 15 between the upper pins 31 is bent downward by the elastic force. The force deformed back to the original planar state causes peeling between the sheet 12 and the viscoelastic film 11. The reason for this is that in the region between the upper pins 31, the semiconductor die 15 is supported by the front end 31a of the upper pin 31 as a fixed beam at both ends, so that the rigidity is larger than the peripheral portion shown in FIG. The peeling of the sheet 12 and the viscoelastic film 11 is promoted by the rigidity of the semiconductor crystal grains 15.
繼而，若開口23的壓力P回到接近大氣壓的第二壓力P2，則於中央部的片材12與黏彈性膜11之間發生剝離。然後，控制部70藉由筒夾驅動部80使筒夾18上升，自片材12拾取半導體晶粒15及黏彈性膜11。Then, when the pressure P of the opening 23 returns to the second pressure P2 close to the atmospheric pressure, peeling occurs between the sheet 12 at the center portion and the viscoelastic film 11. Then, the control unit 70 raises the collet 18 by the collet driving unit 80, and picks up the semiconductor crystal grain 15 and the viscoelastic film 11 from the sheet 12.
如以上所說明，實施形態的拾取裝置100可將經由黏彈性膜11而貼附於片材12的表面12a的半導體晶粒15與黏彈性膜11一併自片材12的表面12a拾取。As described above, the pickup device 100 of the embodiment can pick up the semiconductor crystal grains 15 attached to the surface 12a of the sheet 12 via the viscoelastic film 11 together with the viscoelastic film 11 from the surface 12a of the sheet 12.
以上的說明中，控制部70於如圖8所示般於黏彈性膜11的周邊部分與片材12之間發生初期剝離的情形時，使開口23的壓力P於接近大氣壓的第二壓力P2與接近真空的第一壓力P1之間使壓力P振動一次，即，說明作使壓力P自第二壓力P2降低至第一壓力P1後回到第二壓力P2，但壓力P的振動不限於一個週期，例如亦可如圖10的虛線所示，使壓力P於第二壓力P2與第一壓力P1之間振動兩個週期。於該情形時，產生兩次剝離力Fp達到最大的時刻，因此可更佳地進行片材12與黏彈性膜11的剝離。In the above description, when the control unit 70 is initially peeled off between the peripheral portion of the viscoelastic film 11 and the sheet 12 as shown in FIG. 8, the pressure P of the opening 23 is at the second pressure P2 close to the atmospheric pressure. The pressure P is vibrated once between the first pressure P1 close to the vacuum, that is, the pressure P is returned to the second pressure P2 after being lowered from the second pressure P2 to the first pressure P1, but the vibration of the pressure P is not limited to one. The period, for example, as shown by the broken line in FIG. 10, causes the pressure P to vibrate between the second pressure P2 and the first pressure P1 for two periods. In this case, the time at which the peeling force Fp reaches the maximum is generated twice, so that the peeling of the sheet 12 and the viscoelastic film 11 can be more preferably performed.
繼而，一面參照圖11、圖12一面對拾取裝置100的其他動作進行說明。首先，關於與參照圖7至圖10所說明的動作相同的動作，將說明省略。Next, another operation of the pickup device 100 will be described with reference to FIGS. 11 and 12. First, the same operations as those described with reference to FIGS. 7 to 10 will be omitted.
本動作於圖7所示的初期狀態之後，如圖11所示，控制部70使上頂銷31的各前端31a及上頂柱33的各前端33a自吸附面22上升至高度H2的第五位置後，使開口23的壓力P於第二壓力P2與第一壓力P1之間以頻率20 Hz振動一個週期。然後，控制部70於將上頂柱33的各前端33a的位置保持於第五位置的狀態下，使上頂銷31的前端31a上升至較第五位置高且位於距吸附面22的高度H3的位置的第三位置，使開口23的壓力P於第二壓力P2與第一壓力P1之間振動。於該情形時，吸附面22的位置成為技術方案所記載的第四位置。After the initial state shown in FIG. 7, the control unit 70 raises the front end 31a of each of the upper top pins 31 and the front ends 33a of the upper top pillars 33 from the adsorption surface 22 to the fifth height H2. After the position, the pressure P of the opening 23 is caused to vibrate at a frequency of 20 Hz for one cycle between the second pressure P2 and the first pressure P1. Then, the control unit 70 raises the front end 31a of the upper top pin 31 to a position higher than the fifth position and at a height H3 from the suction surface 22 in a state where the positions of the respective distal ends 33a of the upper top pillar 33 are maintained at the fifth position. The third position of the position causes the pressure P of the opening 23 to vibrate between the second pressure P2 and the first pressure P1. In this case, the position of the adsorption surface 22 is the fourth position described in the claims.
拾取裝置100藉由所述動作，亦可與上文所說明同樣地，將經由黏彈性膜11貼附於片材12的表面12a的薄半導體晶粒15與黏彈性膜11一併自片材12的表面12a拾取。By the above operation, the pickup device 100 can also join the thin semiconductor crystal grains 15 attached to the surface 12a of the sheet 12 via the viscoelastic film 11 and the viscoelastic film 11 together with the sheet as described above. The surface 12a of 12 is picked up.
然後，一面參照圖13一面對拾取裝置100的其他動作進行說明。該動作自圖7所示的初期狀態進入圖11所示般的初期剝離狀態後，如圖13所示，控制部70使上頂柱33的各前端33a的位置下降至與吸附面22的高度為相同高度的第四位置，並且使上頂銷31的前端31a上升至較第五位置高且位於距吸附面22的高度H3的位置的第三位置，使開口23的壓力P於第二壓力P2與第一壓力P1之間振動。於該情形時，吸附面22的位置成為技術方案所記載的第四位置。Next, another operation of the pickup device 100 will be described with reference to FIG. When the operation enters the initial peeling state as shown in FIG. 11 from the initial state shown in FIG. 7, the control unit 70 lowers the position of each of the distal ends 33a of the upper top pillar 33 to the height of the adsorption surface 22 as shown in FIG. a fourth position of the same height, and raising the front end 31a of the upper top pin 31 to a third position higher than the fifth position and located at a position H2 from the suction surface 22, so that the pressure P of the opening 23 is at the second pressure P2 vibrates between the first pressure P1. In this case, the position of the adsorption surface 22 is the fourth position described in the claims.
拾取裝置100藉由所述動作，亦可與上文所說明同樣地，將經由黏彈性膜11貼附於片材12的表面12a的薄半導體晶粒15與黏彈性膜11一併自片材12的表面12a拾取。By the above operation, the pickup device 100 can also join the thin semiconductor crystal grains 15 attached to the surface 12a of the sheet 12 via the viscoelastic film 11 and the viscoelastic film 11 together with the sheet as described above. The surface 12a of 12 is picked up.
10‧‧‧晶圓固持器10‧‧‧Wafer Holder
11‧‧‧黏彈性膜11‧‧‧Viscoelastic film
11a‧‧‧表面/黏彈性膜的表面11a‧‧‧Surface/viscoelastic film surface
12a‧‧‧表面/片材的表面12a‧‧‧Surface/sheet surface
15a‧‧‧表面/半導體晶粒的表面15a‧‧‧ Surface/Semiconductor Grain Surface
11b‧‧‧背面/黏彈性膜的背面11b‧‧‧Back / back of viscoelastic film
12b‧‧‧背面/片材的背面12b‧‧‧Back/back of sheet
15b‧‧‧背面/半導體晶粒的背面15b‧‧‧Back / back of semiconductor die
12‧‧‧片材12‧‧‧Sheet
13‧‧‧環13‧‧‧ Ring
14‧‧‧間隙14‧‧‧ gap
15‧‧‧半導體晶粒15‧‧‧Semiconductor grain
16‧‧‧擴充環16‧‧‧Extension ring
17‧‧‧環按壓件17‧‧‧ ring press
18‧‧‧筒夾18‧‧‧ Collet
18a‧‧‧保持面18a‧‧‧ Keep face
19‧‧‧吸引孔19‧‧‧Attraction hole
20‧‧‧平台20‧‧‧ platform
21‧‧‧罩殼21‧‧‧Shell
22‧‧‧吸附面22‧‧‧Adsorption surface
23‧‧‧開口23‧‧‧ openings
26‧‧‧吸附槽26‧‧‧Adsorption tank
27‧‧‧吸附孔27‧‧‧Adsorption holes
30‧‧‧上推構件30‧‧‧ Push-up components
31‧‧‧上頂銷31‧‧‧Uploading
31a、33a‧‧‧前端31a, 33a‧‧‧ front end
32‧‧‧上頂銷組32‧‧‧Upholding Group
33‧‧‧上頂柱33‧‧‧Top pillar
34‧‧‧上頂塊34‧‧‧Top block
41、43、46‧‧‧質量41, 43, 46‧‧ quality
42、44、47‧‧‧彈簧42, 44, 47‧ ‧ springs
45‧‧‧阻尼器45‧‧‧ damper
50‧‧‧驅動機構50‧‧‧ drive mechanism
51‧‧‧馬達51‧‧‧Motor
52‧‧‧凸輪52‧‧‧ cam
53‧‧‧凸輪從動件53‧‧‧Cam followers
54‧‧‧桿54‧‧‧ pole
55‧‧‧變換機構55‧‧‧Transformation agency
61‧‧‧真空泵61‧‧‧Vacuum pump
62‧‧‧壓力感測器62‧‧‧pressure sensor
63、64、65‧‧‧配管63, 64, 65‧‧‧ piping
66‧‧‧吸入管66‧‧‧Inhalation tube
67、68、69‧‧‧三向閥67, 68, 69‧‧‧ three-way valve
70‧‧‧控制部70‧‧‧Control Department
71‧‧‧CPU71‧‧‧CPU
72‧‧‧記憶體72‧‧‧ memory
73‧‧‧設備/感測器介面73‧‧‧Device/Sensor Interface
74‧‧‧資料匯流排74‧‧‧ data bus
80‧‧‧筒夾驅動部80‧‧‧Clamp drive department
100‧‧‧拾取裝置100‧‧‧ picking device
Fp‧‧‧剝離力Fp‧‧‧ peeling force
f‧‧‧頻率F‧‧‧frequency
H1、H2、H3‧‧‧高度H1, H2, H3‧‧‧ height
P‧‧‧壓力P‧‧‧ pressure
P1‧‧‧第一壓力P1‧‧‧ first pressure
P2‧‧‧第二壓力P2‧‧‧ second pressure
t0、t1、t2、t3‧‧‧時刻Time t0, t1, t2, t3‧‧
Δt、Δt1、Δt2‧‧‧時間Δt, Δt1, Δt2‧‧‧ time
τ‧‧‧弛緩時間Τ‧‧‧ Relaxation time
圖1為表示實施形態的拾取裝置的構成的系統圖。 圖2為表示圖1所示的拾取裝置的平台的立體圖。 圖3為表示半導體晶粒、黏彈性膜及片材的變形的說明圖。 圖4為半導體晶粒、黏彈性膜及片材的積層體的物理模型。 圖5為表示對圖4所示的物理模型的片材下側的面施加振動壓力時的片材與黏彈性膜之間的剝離力的變化的圖。 圖6為表示黏彈性膜的弛緩時間與壓力振動的最適頻率的關係的圖表。 圖7為表示圖1所示的拾取裝置的動作的說明圖（初期狀態）。 圖8為表示圖1所示的拾取裝置的動作的說明圖（周邊剝離狀態）。 圖9為表示圖1所示的拾取裝置的動作的說明圖（大致全面剝離狀態）。 圖10為表示圖7至圖9所示的動作時的開口壓力的振動的圖表。 圖11為表示圖1所示的拾取裝置的其他動作的說明圖（周邊剝離狀態）。 圖12為表示圖1所示的拾取裝置的其他動作的說明圖（大致全面剝離狀態）。 圖13為表示圖1所示的拾取裝置的其他動作的說明圖（大致全面剝離狀態）。Fig. 1 is a system diagram showing a configuration of a pickup device according to an embodiment. Fig. 2 is a perspective view showing a stage of the pickup device shown in Fig. 1; 3 is an explanatory view showing deformation of a semiconductor crystal grain, a viscoelastic film, and a sheet. 4 is a physical model of a laminate of a semiconductor die, a viscoelastic film, and a sheet. Fig. 5 is a view showing a change in peeling force between a sheet and a viscoelastic film when a vibration pressure is applied to a surface on the lower side of the sheet of the physical model shown in Fig. 4; Fig. 6 is a graph showing the relationship between the relaxation time of the viscoelastic film and the optimum frequency of the pressure vibration. Fig. 7 is an explanatory view (initial state) showing an operation of the pickup device shown in Fig. 1; Fig. 8 is an explanatory view showing the operation of the pick-up device shown in Fig. 1 (peripheral peeling state). Fig. 9 is an explanatory view showing the operation of the pick-up device shown in Fig. 1 (substantially fully peeled off state). FIG. 10 is a graph showing vibration of the opening pressure during the operation shown in FIGS. 7 to 9. Fig. 11 is an explanatory view showing another operation of the pick-up device shown in Fig. 1 (peripheral peeling state). Fig. 12 is an explanatory view showing another operation of the pick-up device shown in Fig. 1 (substantially fully peeled off state). Fig. 13 is an explanatory view showing another operation of the pick-up device shown in Fig. 1 (substantially fully peeled state).
Claims (12)
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| JP (1) | JP6739120B2 (en) |
| KR (1) | KR102256219B1 (en) |
| CN (1) | CN110651362B (en) |
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| JP7237655B2 (en) * | 2019-03-01 | 2023-03-13 | ファスフォードテクノロジ株式会社 | Semiconductor manufacturing equipment and semiconductor device manufacturing method |
| CN116508140A (en) | 2021-03-23 | 2023-07-28 | 株式会社新川 | Method for generating initial peeling of wafer and pick-up device of semiconductor bare chip |
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| TWI225279B (en) * | 2002-03-11 | 2004-12-11 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| JP2004304066A (en) * | 2003-03-31 | 2004-10-28 | Renesas Technology Corp | Method of manufacturing semiconductor device |
| TWI295825B (en) * | 2006-03-03 | 2008-04-11 | King Yuan Electronics Co Ltd | Integrated module of ejector pin for chip detachment |
| JP4755634B2 (en) * | 2006-09-29 | 2011-08-24 | 東レエンジニアリング株式会社 | Pickup device and pickup method |
| US7665204B2 (en) | 2006-10-16 | 2010-02-23 | Asm Assembly Automation Ltd. | Die detachment apparatus comprising pre-peeling structure |
| JP5583475B2 (en) * | 2010-05-19 | 2014-09-03 | キヤノンマシナリー株式会社 | Pickup device |
| JP2012059829A (en) * | 2010-09-07 | 2012-03-22 | Elpida Memory Inc | Peeling device for semiconductor chip, die-bonding apparatus, peeling method for semiconductor chip, and method of manufacturing semiconductor device |
| JP5717910B1 (en) * | 2014-02-26 | 2015-05-13 | 株式会社新川 | Semiconductor die pickup apparatus and pickup method |
| JP2017034117A (en) * | 2015-08-03 | 2017-02-09 | 日立化成株式会社 | Dicing/die-bonding integrated tape |
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| TWI834450B (en) * | 2022-12-26 | 2024-03-01 | 梭特科技股份有限公司 | Method for stripping die with pushing means and air control means |
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| KR102256219B1 (en) | 2021-05-26 |
| CN110651362B (en) | 2023-07-14 |
| JP6739120B2 (en) | 2020-08-19 |
| CN110651362A (en) | 2020-01-03 |
| WO2018174138A1 (en) | 2018-09-27 |
| TWI685046B (en) | 2020-02-11 |
| KR20190129994A (en) | 2019-11-20 |
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| SG11201909913TA (en) | 2019-11-28 |
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