201026582 六、發明說明： 【發明所屬之技術領域】 本發明係關於在製造液晶面板時所使用的基板貼合裝 置或離子摻雜裝置等所具備，使用在吸附/保持玻璃基板 ，此外，在半導體元件製造製程中所使用的蝕刻處理、藉 由化學氣相沈積（CVD )之薄膜形成等的電漿處理裝置、 電子曝光裝置、離子描繪裝置、離子注入裝置等所具備， φ 使用在吸附/保持半導體晶圓的靜電吸盤。 【先前技術】 靜電吸盤係具有在如上所述之各種半導體製造裝置或 液晶面板製造裝置等之處理室內，使矽晶圓或玻璃基板等 作靜電性吸附而保持的功能。在該靜電吸盤中，由於將基 板作接觸保持，因此附著在靜電吸盤之基板吸附面的微粒 等污染物會附著在半導體晶圓或玻璃基板，而會有在後工 φ 程之半導體製造製程中發生問題之虞。附著在基板等的污 染物係使作爲最終製品之半導體元件等的良率明顯降低， 此外，亦會有使得在各工程中所使用的製造裝置二次污染 的情形，且亦會引起使工廠生產線全體的裝置污染的情形 。因此，對於污染物附著之問題的處理對策之一，在於管 理晶圓或玻璃基板等之背面的微粒。 被稱爲 International Technology Roadmap For Semiconductors (以下稱爲ITRS )之有關半導體元件製造的國際機關作 成針對成爲如前所述之污染要因的晶圓背面的微粒的目標 -5- 201026582 指針，且在網際網路的網頁中公開內容（http://www.itrs.net/) 。在2007年版的ITRS中，在前端（front end)製程的曝 光裝置或計測裝置以外的裝置、亦即離子注入裝置等中’ 晶圓背面的微粒指針至2012年爲止，以φ 300mm晶圓尺 寸’直徑〇.16μιη，被設爲200個。因此，在靜電吸盤中 ，必須儘量避免如上所示之微粒在所吸附保持的晶圓背面 移動且附著。 靜電吸盤中之上述問題的解決對策之一係儘可能減小 其基板吸附面與晶圓或玻璃基板背面的接觸面積。尤其其 效果顯著呈現的是在基板吸附面由陶瓷製者所構成的情形 下。亦即，陶瓷基本上呈多孔狀，在製造過程中所殘留的 微小陶瓷粉或其他係在內部被捕捉。因此，在以靜電吸盤 吸附/保持半導體晶圓或玻璃基板等基板的過程中，該等 在基板吸附面析出的可能性高。因此，例如日本特開 2 006-49357號公報所示，爲了減小基板吸附面與基板背面 的接觸面積，將靜電吸盤的基板吸附面形成爲浮凸（ emboss)構造，亦即在基板吸附面形成複數個被稱爲銷的 凸部，進行僅使該凸部的平坦頂面與基板相接觸而予以吸 附。此外，在日本特開2006-237023號公報中係已提出將 形成基板吸附面的陶瓷的銷與基板的接觸面積設爲基板面 積的10%以下，並且將銷的平均高度設爲5μηι以上、 30μιη以下，而且將銷的高度的標準偏差設爲1·8μηι以下 〇 但是，該等技術均爲利用陶瓷等較具硬度的材料來形 -6- 201026582 成基板吸附面者’在具備有由橡膠或樹脂等彈性材料所構 成之基板吸附面的靜電吸盤中，假設仿效該等而形成凸部 ，亦因在使半導體晶圓或玻璃基板等基板吸附在靜電吸盤 時的力，而使該凸部收縮，因此會有無法如預期使得與基 板的接觸面積降低的情形。此外，即使透過具備有流通冷 媒之流路等之冷卻手段的靜電吸盤，而欲使所吸附/保持 的基板冷卻，亦會有無法充分獲得其效果之虞。 ❹ 但是，在白本特開200 1 -6〇61 8號公報中已記載在形 成於基板吸附面的凸部安裝合成橡膠製的吸收構件，但是 該文獻係關於利用吸收構件局部吸收基板所具有之基板背 面的粗糙度，來保持所吸附、保持的基板的平坦度，俾使 因曝光裝置所造成之焦點偏移情形消失的技術（參照段落 0036、段落0049等），與考慮到在凸部頂面之與基板的 接觸面積的技術相差甚遠。此外，在日本特開平10-335439 號公報中係記載一種具備有形成有粒化（凹凸）模樣的矽 φ 氧橡膠製的基板吸附面，與晶圓的接觸面積成爲晶圓面積 之20〜90%的靜電吸盤，雖然舉出矽氧橡膠的硬度（JIS-A)爲85以下（參照段落〇〇〇8、0009)，但在該文獻中 並非爲考慮到吸附/保持有基板的狀態者。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2006-49357號公報 [專利文獻2]日本特開2006-237023號公報 [專利文獻3]日本特開200 1 -6061 8號公報 201026582 [專利文獻4]日本特開平1 0-33 5439號公報 【發明內容】 (發明所欲解決之課題） 根據如上所示之狀況，本發明人等針對在具備有由橡 膠或樹脂等彈性材料所構成的基板吸附面的靜電吸盤中， 可有效減少附著在基板之微粒等污染物，並且使得對於透 過靜電吸盤所吸附/保持之基板的冷卻效果最有效率地呈 @ 現的手段精心硏究的結果，發現藉由將在吸附力作用的狀 態下的凸部形狀等最適化，可同時解決該等課題，進而完 成本發明。 因此，本發明係提供一種可減少污染物由基板吸附面 附著在基板，同時可一面將基板接觸面積保持爲最適，一 面有效地進行介由靜電吸盤之冷卻的靜電吸盤。 (解決課題之手段） @ 亦即，本發明係一種靜電吸盤，係將具備有由彈性材 料所構成之複數凸部的彈性吸附層作爲基板吸附面，隔著 該彈性吸附層來吸附/保持基板的靜電吸盤，其特徵爲： 將彈性吸附層中之凸部的高度設爲h、基板吸附面中 之平均單位面積的凸部數設爲η、凸部中之頂面的面積設 爲Α、形成凸部之彈性材料的彈性係數設爲Ε，當以吸附 力F吸附/保持全體平坦度爲Wh的基板時，凸部以吸附力 F所作用的方向進行收縮的量6滿足以下關係式（1) ’ -8- 201026582 而且基板吸附面中之平均單位面積的凸部頂面的總面積的 比例f爲10%以上： 5\\^2520.5\¥11,在此5 = (11/11八）.（？/£)...... ( 1 ) 〔其中，各値的單位係分別表示在括弧內；Wh ( m ) 、h (m ) 、！1(個/1112) ' A ( m2 ) 、E(Pa) ' F (Pa) 、 <5 . (m )〕。 此外，本發明係一種靜電吸盤之製造方法，係製造上 述靜電吸盤的方法，其特徵爲：將具備有由彈性材料所構 成的彈性層、上部絕緣層、形成內部電極的電極層、及下 部絕緣層的靜電吸盤薄片收容在真空吸盤裝置，在靜電吸 盤薄片的彈性層側介在有預定的圖案遮罩而進行真空吸引 ，藉此形成與圖案遮罩相對應的凸部而得彈性吸附層。 本發明之靜電吸盤，在以吸附力F吸附/保持基板的 〇 狀態下，凸部以吸附力F所作用的方向進行收縮的量（5係 基板全體平坦度Wh的0.5倍以上，而且爲全體平坦度Wh 的5倍以下，較佳爲（5與Wh的關係滿足以下所示之關係 式（2)。 lWh，在此 s = (h/nA) . (F/E)……（2) 〔各値的單位係與關係式（1 )相同〕。 當凸部以吸附力F所作用的方向進行收縮的量（5小於 -9 - 201026582 所吸附基板的全體平坦度Wh的0.5倍時，與凸部頂面所 載置的基板背面相接觸的機率變小，相反地若大於5倍時 ，所需吸附力會變得過高，並不實際。若收縮量（5滿足關 係式（2)，可期待所有凸部的頂面遍及基板全面而相接 觸，而不會有因靜電吸盤所造成之基板冷卻能力降低的情 形。 在本發明中，在使基板吸附/保持在彈性吸附層時， 彈性吸附層所具備的凸部與基板的接觸狀態被最適化。在 此，所謂吸附時的接觸狀態係指被吸附/保持在靜電吸盤 的基板背面在凸部頂面相接觸的比例。若凸部以柔軟的彈 性材質所形成，由於凸部係按照吸附力而進行收縮，因此 考慮藉由選擇適當凸部的尺寸與配置，而以更多的面積相 接觸。所謂接觸狀態的最適化係指所吸附的力、形成凸部 的材料的柔軟度（亦即彈性係數）、凸部的高度、凸部頂 面的面積、及前述接觸面積的關係。 關於彈性吸附層中之凸部的高度h，較佳爲Ιμιη以上 、ΙΟΟΟμιη以下。若凸部的高度h未達Ιμιη，如後所述， 會小於半導體製造時所使用的一般矽晶圓所具有的撓曲或 翹曲的値，而會有無法達成作爲凸部之作用之虞，相反地 ，若凸部的高度h大於ΙΟΟΟμηι，彈性吸附層中的熱阻抗 變得過大，而會有基板的冷卻變得不充分之虞。 此外，關於形成凸部之彈性材料的彈性係數Ε，較佳 爲O.IMPa以上、50MPa以下的範圍。所謂的一般橡膠的 彈性係數（在此稱爲楊氏係數）爲1 Mpa左右，相對於此 201026582 ，在聚醯亞胺等樹脂中，則係比橡膠高3位數左右而爲 lGpa左右。因此，若爲如聚醯亞胺般之較硬的樹脂，會 有凸部的收縮量（5 (m)變得過小之虞，在本發明中，爲 了滿足如上所述之彈性係數E，由橡膠等彈性材料來形成 彈性吸附層。 關於形成凸部的彈性材料，具體而言，爲選自矽氧橡 膠、丙烯酸系橡膠、腈橡膠、異戊二烯橡膠、胺酯橡膠、 φ 乙烯-丙烯橡膠、環氧氯丙烷橡膠、氯丁二烯橡膠、苯乙 烯丁二烯橡膠、丁二烯橡膠、氟橡膠、及丁基橡膠之中至 少一者所構成即可。其中，爲了儘量減少對於吸附/保持 在靜電吸盤的基板的污染的影響，以包含與一般所使用的 矽晶圓爲相同材質的矽氧橡膠較爲適合。此外，化學性較 爲安定的氟橡膠亦較爲理想。 關於彈性吸附層中之凸部的具體平面形狀，並未特別 有所限制，亦可形成爲例如圓形或橢圓形、三角以上的多 Φ 角形。此外，該凸部的平面形狀所具有的最大尺寸係以基 板吸附面之最大尺寸的10分之1以下、500分之1以上爲 宜。較佳爲基板吸附面之最大尺寸的100分之1以上、10 分之1以下。例如，在吸附/保持直徑300mm的晶圓時， 若將凸部的平面形狀形成爲圓形，凸部的頂面最好形成爲 直徑3mm以上、30mm以下的圓形。若凸部的平面形狀的 最大尺寸未達基板吸附面之最大尺寸的500分之1，尤其 在形成凸部的材料的彈性係數較小時，其加工變得較難進 行，難以遍及全部來保證凸部的形狀加工。此外，若凸部 -11 - 201026582 的平面形狀大於基板吸附面之最大尺寸的10分之1，結果 彼此相鄰的凸部的間隔會變得過大，在凸部之間的間隙部 分，基板的冷卻並不充分，而會有基板的冷卻變得不均一 之虞。 此外，凸部中之頂面的面積A、與基板吸附面中之平 均單位面積的凸部數η的積係成爲理論上的接觸總面積 nA ( m2 )。在本發明中，按照所吸附/保持的基板的種類 ，以該總面積nA ( m2 )爲指標，可形成彈性吸附層中的 @ 凸部，由有效進行基板冷卻的觀點來看，基板吸附面中之 平均單位面積的凸部頂面的總面積比例f (亦即凸部頂面 對基板吸附面之總面積的比例）爲1 0%以上，較佳爲1 5% 以上，更佳爲20〜50 %的範圍。此外，若說明（5 = (h/nA) • (F/E)的關係式，本式的右括弧（F/E )係靜電吸盤的吸 附力F與凸部的樹脂材料的彈性係數E的比。吸附力F係 表示基板吸附面中之平均單位面積的吸附力，一般而言， 若爲一般的靜電吸盤，F與E相比爲小2位數以上的値， _ 例如，相對於一般的吸附力F = 4900Pa，若爲橡膠等彈性 體’即爲 E=lMpa，成爲 F/E=4.9xl〇-3。另一方面，左 括弧內的（h/nA )係表示相對於凸部高度的凸部的nA， 亦即接觸總面積的比。因此，對於所假想的吸附力F與凸 部的材質的彈性係數E，選擇在製作上所容許的適當的（ h/nA)，最後以滿足關係式5Whg δ 2 0.5 Wh的方式進行設 計。 關於具備有複數凸部的彈性吸附層，可將由彈性材料 -12- 201026582 所構成的凸部形成在由其他材料所構成的基材上，亦可將 凸部與基材形成爲一體而由彈性材料所形成。此外，關於 形成預定凸部的具體手段並未特別有所限制，可例示例如 以下所示的方法。亦即，藉由在由彈性材料所構成的薄片 物透過遮罩等來進行噴砂處理等，可形成具有預定平面形 狀及高度h (深度）的凸部。此外，亦可將具備有由彈性 材料所構成的彈性層、上部絕緣層、形成內部電極的電極 φ 層、及下部絕緣層的靜電吸盤薄片收容在真空吸盤裝置， 使預定的圖案遮罩介在於靜電吸盤薄片的彈性層側而作真 空吸引，藉此形成與圖案遮罩相對應的凸部。 此外，在彈性吸附層中的凸部的頂面，亦可形成梨皮 紋理圖案。藉由將凸部的頂面形成爲梨皮紋理狀，可沿著 以基板背面的全體平坦度Wh並無法呈現的更爲微細的局 部凹凸而接觸凸部的頂面。關於該梨皮紋理圖案的尺寸， 最好係突出部分的大小與高度分別爲lnm〜lOOnm的範圍 關於本發明之靜電吸盤所吸附/保持的基板，若爲例 如液晶面板製造所使用的玻璃基板、或在半導體元件製造 製程中所使用的矽晶圓等爲一般所謂的靜電吸盤所吸附/ 保持的對象即可。目前已知一般所使用之直徑300mm、厚 度0.8mm的矽晶圓係存在平均約ΙΟμιη左右的撓曲（bow )或翹曲（warp )。近年來，在將晶圓作吸附固定時之“ 全體平坦度” GBIR ( Global Back-Surface-Referenced Ideal Plane Range )取代“全厚度變異量” TTV ( Total Thickness -13- 201026582[Technical Field] The present invention relates to a substrate bonding apparatus or an ion doping apparatus used in the production of a liquid crystal panel, and is used in an adsorption/holding glass substrate, and further, in a semiconductor. A plasma processing apparatus used in a component manufacturing process, a plasma processing apparatus formed by chemical vapor deposition (CVD), an electron exposure apparatus, an ion drawing apparatus, an ion implantation apparatus, and the like, and φ is used for adsorption/maintenance. Electrostatic chuck for semiconductor wafers. [Prior Art] The electrostatic chuck has a function of electrostatically adsorbing and holding a silicon wafer or a glass substrate in a processing chamber such as various semiconductor manufacturing apparatuses or liquid crystal panel manufacturing apparatuses as described above. In the electrostatic chuck, since the substrate is held in contact with each other, contaminants such as particles adhering to the adsorption surface of the substrate of the electrostatic chuck adhere to the semiconductor wafer or the glass substrate, and there is a semiconductor manufacturing process in the subsequent process. The problem has occurred. Contaminants adhering to a substrate or the like significantly reduce the yield of a semiconductor element or the like as a final product, and also cause secondary contamination of a manufacturing apparatus used in each project, and also cause a factory production line. The situation in which all the devices are contaminated. Therefore, one of the countermeasures against the problem of adhesion of contaminants is to manage fine particles on the back surface of a wafer or a glass substrate. An international organization for the manufacture of semiconductor components, known as International Technology Roadmap For Semiconductors (hereinafter referred to as ITRS), has developed a target for the particles on the back side of the wafer that is the cause of contamination as described above - 5, 2010, 26,582, and on the Internet. The content of the road is public (http://www.itrs.net/). In the 2007 version of the ITRS, in the front end process of the exposure device or the device other than the measurement device, that is, the ion implantation device, etc., the particle pointer on the back of the wafer is up to 2012, with a wafer size of φ 300 mm. The diameter 〇.16μιη is set to 200. Therefore, in the electrostatic chuck, it is necessary to prevent the particles as shown above from moving and adhering to the back surface of the wafer which is adsorbed and held. One of the solutions to the above problems in the electrostatic chuck is to minimize the contact area between the substrate adsorption surface and the back surface of the wafer or glass substrate. In particular, the effect is remarkable in the case where the substrate adsorption surface is composed of a ceramic manufacturer. That is, the ceramic is substantially porous, and the minute ceramic powder or other system remaining in the manufacturing process is trapped inside. Therefore, in the process of adsorbing/holding a substrate such as a semiconductor wafer or a glass substrate by an electrostatic chuck, the possibility of depositing on the substrate adsorption surface is high. For this reason, in order to reduce the contact area between the substrate adsorption surface and the back surface of the substrate, the substrate adsorption surface of the electrostatic chuck is formed into an emboss structure, that is, on the substrate adsorption surface, as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2 006-49357. A plurality of convex portions called pins are formed, and the flat top surface of the convex portion is brought into contact with the substrate to be adsorbed. In the Japanese Patent Publication No. 2006-237023, it is proposed that the contact area between the pin of the ceramic forming the substrate adsorption surface and the substrate is 10% or less of the substrate area, and the average height of the pin is set to 5 μm or more and 30 μm. In the following, the standard deviation of the height of the pin is set to 1·8 μηι or less. However, these techniques are all made of a material having a hardness such as ceramics, and the surface of the substrate is -6-201026582. In the electrostatic chuck of the substrate adsorption surface formed of an elastic material such as a resin, it is assumed that the convex portion is formed by emulating the same, and the convex portion is contracted by a force when the substrate such as a semiconductor wafer or a glass substrate is attracted to the electrostatic chuck. Therefore, there is a case where the contact area with the substrate cannot be lowered as expected. Further, even if an electrostatic chuck having a cooling means such as a flow path through which a refrigerant flows is passed through, and the substrate to be adsorbed/held is cooled, the effect may not be sufficiently obtained. However, in the Japanese Patent Publication No. 2001-61-61, it is described that an absorbent member made of a synthetic rubber is attached to a convex portion formed on a substrate adsorption surface, but this document has a partial absorption of the substrate by the absorption member. The roughness of the back surface of the substrate to maintain the flatness of the substrate to be adsorbed and held, and the technique of eliminating the focus shift caused by the exposure device (refer to paragraph 0036, paragraph 0049, etc.), and considering the convex portion The technique of the top surface to the contact area of the substrate is quite different. Further, Japanese Laid-Open Patent Publication No. Hei 10-335439 discloses a substrate adsorption surface made of 矽φ oxy rubber having a granulated (concave-convex) pattern, and the contact area with the wafer is 20 to 90 of the wafer area. In the electrostatic chuck of %, the hardness (JIS-A) of the silicone rubber is 85 or less (refer to paragraph 、 8, 0009), but in this document, the state in which the substrate is adsorbed/held is not considered. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2006-237023 (Patent Document 2) JP-A-2006-237023 (Patent Document 3) JP-A-200-6061 According to the above-described situation, the inventors of the present invention have an elastic material such as rubber or resin. In the electrostatic chuck in which the substrate adsorption surface is formed, contaminants such as particles adhering to the substrate can be effectively reduced, and the cooling effect of the substrate adsorbed/held by the electrostatic chuck can be most efficiently and efficiently performed. As a result, it has been found that the above-described problems can be simultaneously solved by optimizing the shape of the convex portion in a state in which the adsorption force acts, and the present invention has been completed. Accordingly, the present invention provides an electrostatic chuck which can reduce the adhesion of contaminants from the substrate adsorption surface to the substrate while maintaining the optimum contact area of the substrate while effectively cooling the electrostatic chuck. (Means for Solving the Problem) @ In other words, the present invention relates to an electrostatic chuck in which an elastic adsorption layer having a plurality of convex portions composed of an elastic material is used as a substrate adsorption surface, and the substrate is adsorbed/maintained via the elastic adsorption layer. The electrostatic chuck is characterized in that the height of the convex portion in the elastic adsorption layer is h, the number of convex portions per unit area of the substrate adsorption surface is η, and the area of the top surface of the convex portion is Α, When the elastic modulus of the elastic material forming the convex portion is Ε, when the substrate having the entire flatness of Wh is adsorbed/held by the adsorption force F, the amount 6 at which the convex portion contracts in the direction in which the adsorption force F acts satisfies the following relationship ( 1) ' -8- 201026582 Moreover, the ratio f of the total area of the top surface of the convex portion of the average unit area in the substrate adsorption surface is 10% or more: 5\\^2520.5\¥11, where 5 = (11/11 eight ).(?/£)...... (1) [Where the units of each unit are shown in brackets; Wh ( m ), h (m ), ! 1 (number / 1112) ' A ( m2 ) , E (Pa ) ' F (Pa) , < 5 . (m )]. Further, the present invention relates to a method of manufacturing an electrostatic chuck, which is characterized in that an electrostatic layer composed of an elastic material, an upper insulating layer, an electrode layer forming an internal electrode, and a lower portion are provided. The electrostatic chuck sheet of the layer is housed in a vacuum chuck device, and a predetermined pattern mask is placed on the elastic layer side of the electrostatic chuck sheet to perform vacuum suction, whereby a convex portion corresponding to the pattern mask is formed to obtain an elastic adsorption layer. In the electrostatic chuck of the present invention, the convex portion is shrunk in the direction in which the adsorption force F acts in the state in which the substrate is adsorbed and held by the adsorption force F (0.5 times or more of the entire flatness Wh of the 5-series substrate, and is the entire Preferably, the relationship between 5 and Wh satisfies the relationship (2) shown below. lWh, where s = (h/nA) . (F/E) (2) [The unit of each 値 is the same as the relation (1).] When the convex portion shrinks in the direction in which the adsorption force F acts (5 is less than 0.5 times the total flatness Wh of the substrate to be adsorbed by -9 - 201026582, The probability of contact with the back surface of the substrate placed on the top surface of the convex portion becomes small. On the contrary, if it is more than 5 times, the required adsorption force becomes too high, which is not practical. If the shrinkage amount (5 satisfies the relationship (2) It can be expected that the top surfaces of all the convex portions are in contact with each other across the substrate without a decrease in the cooling ability of the substrate due to the electrostatic chuck. In the present invention, when the substrate is adsorbed/held on the elastic adsorption layer The contact state between the convex portion of the elastic adsorption layer and the substrate is optimized. Here, The contact state at the time of adsorption refers to a ratio at which the back surface of the substrate of the electrostatic chuck is adsorbed/held on the top surface of the convex portion. If the convex portion is formed of a soft elastic material, the convex portion contracts according to the adsorption force, It is considered that by selecting the size and arrangement of the appropriate convex portions, the contact is made with more areas. The so-called contact state optimization refers to the force to be adsorbed, the softness of the material forming the convex portion (ie, the elastic coefficient), and the convexity. The height of the portion, the area of the top surface of the convex portion, and the relationship between the contact areas. The height h of the convex portion in the elastic adsorption layer is preferably Ιμηη or more and ΙΟΟΟμιη or less. If the height h of the convex portion is less than Ιμηη, As will be described later, it is smaller than the deflection or warpage of the general germanium wafer used in semiconductor manufacturing, and the flaw of the convex portion may not be achieved. Conversely, if the height h of the convex portion is larger than ΙΟΟΟμηι, the thermal resistance in the elastic adsorption layer becomes too large, and the cooling of the substrate becomes insufficient. Further, regarding the elastic modulus of the elastic material forming the convex portion, It is preferably in the range of O.IMPa or more and 50 MPa or less. The elastic coefficient of the general rubber (herein referred to as the Young's modulus) is about 1 Mpa, and in contrast to this 201026582, in the resin such as polyimide, the ratio is The rubber has a height of about 3 digits and is about 1 Gpa. Therefore, if it is a hard resin such as polyimide, the amount of shrinkage of the convex portion (5 (m) becomes too small, in the present invention, In order to satisfy the elastic coefficient E as described above, the elastic adsorption layer is formed of an elastic material such as rubber. The elastic material forming the convex portion is specifically selected from the group consisting of neodymium rubber, acrylic rubber, nitrile rubber, and isoprene. At least one of olefin rubber, urethane rubber, φ ethylene-propylene rubber, epichlorohydrin rubber, chloroprene rubber, styrene butadiene rubber, butadiene rubber, fluororubber, and butyl rubber It can be constructed. Among them, in order to minimize the influence of contamination on the substrate adsorbed/held on the electrostatic chuck, a silicone rubber containing the same material as that of the conventionally used tantalum wafer is suitable. In addition, chemically stable fluororubbers are also preferred. The specific planar shape of the convex portion in the elastic adsorption layer is not particularly limited, and may be formed into, for example, a circular or elliptical shape or a polygonal shape of a plurality of Φ or more. Further, the maximum size of the planar shape of the convex portion is preferably 1/10 or less and 500 or more of the maximum size of the substrate adsorption surface. It is preferably 1/100 or more and 1/10 or less of the maximum size of the substrate adsorption surface. For example, when a wafer having a diameter of 300 mm is adsorbed/held, if the planar shape of the convex portion is formed into a circular shape, the top surface of the convex portion is preferably formed into a circular shape having a diameter of 3 mm or more and 30 mm or less. If the maximum dimension of the planar shape of the convex portion is less than 1/500 of the maximum dimension of the substrate adsorption surface, especially when the elastic modulus of the material forming the convex portion is small, the processing becomes difficult, and it is difficult to ensure that it is all over. The shape of the convex part is processed. Further, if the planar shape of the convex portions -11 - 201026582 is larger than 1/10 of the maximum size of the substrate adsorption surface, the interval between the convex portions adjacent to each other becomes excessive, and the gap portion between the convex portions, the substrate The cooling is not sufficient, and the cooling of the substrate becomes uneven. Further, the area A of the top surface in the convex portion and the number η of the convex portions per unit area in the substrate adsorption surface become the theoretical total contact area nA (m2). In the present invention, the @ convex portion in the elastic adsorption layer can be formed by using the total area nA (m2) as an index according to the type of the substrate to be adsorbed/held, and the substrate adsorption surface is obtained from the viewpoint of effective substrate cooling. The ratio of the total area f of the top surface of the convex portion per unit area (that is, the ratio of the top of the convex portion to the total area of the adsorption surface of the substrate) is 10% or more, preferably 1 5% or more, more preferably 20 ~50% range. In addition, if the relationship of (5 = (h/nA) • (F/E) is described, the right bracket (F/E) of the equation is the adsorption force F of the electrostatic chuck and the elastic modulus E of the resin material of the convex portion. The adsorption force F is an adsorption force per unit area on the adsorption surface of the substrate. In general, if it is a general electrostatic chuck, F is smaller than two digits of E, _ for example, relative to the general The adsorption force F = 4900Pa, if it is an elastomer such as rubber, it is E=lMpa, which becomes F/E=4.9xl〇-3. On the other hand, the (h/nA) in the left bracket indicates the relative to the convex part. The ratio of nA of the height of the convex portion, that is, the total area of contact. Therefore, for the imaginary adsorption force F and the elastic modulus E of the material of the convex portion, the appropriate (h/nA) allowed in the production is selected, and finally Designed to satisfy the relationship of 5Whg δ 2 0.5 Wh. For an elastic adsorption layer having a plurality of convex portions, a convex portion composed of an elastic material -12-201026582 can be formed on a substrate made of other materials. The convex portion may be formed integrally with the base material and formed of an elastic material. The specific means of the part is not particularly limited, and a method as shown in the following can be exemplified, that is, a sheet having a material made of an elastic material can be formed into a predetermined planar shape by performing a sandblasting treatment or the like through a mask or the like. And a convex portion having a height h (depth). Further, an electrostatic chuck sheet including an elastic layer made of an elastic material, an upper insulating layer, an electrode φ layer forming an internal electrode, and a lower insulating layer may be housed in a vacuum chuck. And forming a predetermined pattern mask on the elastic layer side of the electrostatic chuck sheet for vacuum suction, thereby forming a convex portion corresponding to the pattern mask. Further, the top surface of the convex portion in the elastic adsorption layer is also The pear skin texture pattern can be formed. By forming the top surface of the convex portion into a pear skin texture, the top surface of the convex portion can be contacted along a finer partial unevenness which is not exhibited by the entire flatness Wh of the back surface of the substrate. Regarding the size of the pear skin texture pattern, it is preferable that the size and height of the protruding portion are in the range of 1 nm to 100 nm, respectively, regarding the substrate adsorbed/held by the electrostatic chuck of the present invention, For example, a glass substrate used for the production of a liquid crystal panel or a germanium wafer used in a semiconductor device manufacturing process may be an object to be adsorbed/held by a general so-called electrostatic chuck. It is known that a diameter of 300 mm is generally used. A tantalum wafer having a thickness of 0.8 mm has a bow or warp of about ΙΟμηη on average. In recent years, "all flatness" when the wafer is adsorbed and fixed GBIR (Global Back-Surface) -Referenced Ideal Plane Range ) replaces "full thickness variation" TTV ( Total Thickness -13- 201026582
Variation )來使用，但是若爲直徑300mxn之矽晶圓的情 形，該“全體平坦度”爲約1μ左右。因此，關於本發明 之靜電吸盤作爲對象的基板的全體平坦度Wh，係可形成 爲Ο.ίμιη〜ΙΟμπι的範圍。 接著，在本發明中，如上所述，以當以靜電吸盤吸附 /保持如上所示之基板時的凸部的收縮量（壓縮距離）成 爲基板的全體平坦度Wh的0.5倍以上的方式，來設定彈 性吸附層的彈性係數、形狀、其配置。此時，關於吸附/ φ 保持基板的吸附力F，至少考慮到目前主要被使用的矽晶 圓或玻璃基板等之吸附所需的吸附力，在本發明中，係形 成爲考慮到吸附力F以1 OOP a以上進行吸附/保持時者。 本發明中的靜電吸盤若爲可將具備有由彈性材料所構 成之複數凸部的彈性吸附層作爲基板吸附面，隔著該彈性 吸附層來吸附/保持基板者，則關於其具體構造，並未特 別有所限制，如周知的靜電吸盤般，可將所謂的具有內部 電極而形成層積構造的靜電吸盤薄片，採用貼附在具備有 ❿ 流通冷卻媒體之流路等的金屬基盤之類的構成。接著，亦 可在對上述內部電極施加電壓時，以彈性吸附層成爲基板 吸附面的方式，在形成靜電吸盤薄片的上部絕緣層（基板 吸附面側絕緣層）之上設置彈性吸附層，或者亦可使該彈 性吸附層兼作爲上部絕緣層。此外，可爲具有正電極及負 電極作爲內部電極的雙極型靜電吸盤，亦可爲僅有正（負 )電極作爲內部電極、負（正）極側則接地的單極型。此 外，關於上部絕緣層或下部絕緣層（金屬基盤側絕緣層） -14- 201026582 的材質等'或內部電極的材質、形狀等，亦未特別有所限 制。 (發明之效果） 根據本發明，一面吸收半導體晶圓或玻璃基板等所不 可避免具備的翹曲或撓曲，透過彈性吸附層的凸部，可在 基板吸附面均一地吸附/保持該等基板，因此可有效減低 φ 微粒等污染物由基板吸附面轉移至基板背面，並且將處理 中所蓄積的基板的熱以最大限度傳達至靜電吸盤，可效率 佳地進行透過靜電吸盤的基板冷卻。 【實施方式】 以下一面使用圖示，一面進一步詳加說明本發明。 在表1中係顯示針對由在橡膠中亦較爲柔軟之彈性係 數IMpa的矽氧橡膠所構成的情形（例1〜3)，爲工程塑 ® 膠的代表，由在靜電吸盤中亦一般被加以利用之彈性係數 1 Gpa的聚醯亞胺所構成的情形（例4、5 )、及在橡膠中 亦較爲堅硬之彈性係數1 OMpa的情形，分別彈性吸附層所 具備的凸部的例示。此外，第1圖（a)係顯示該表1中之凸 部的配置關係的平面說明圖。在該第1圖（a)中係顯示將直 徑d(m)的凸部1配置在邊長爲a(m)之正三角形之各 頂點的態樣，以其中一個凸部1 c爲中心，由凸部lb依順 時計方向配置有凸部lg、凸部lh、凸部Id、凸部if、及 凸部le。該等凸部1係顯示靜電吸盤100中的一部分，在 -15- 201026582 具有如上所示之關係的配置狀態下’以由凸部1形成靜電 吸盤100之基板吸附面的方式在全面分布。此外，在第1 圖（b)中顯示由第1圖（a)中的A-A剖面方向所觀看到的靜 電吸盤1 〇〇的態樣。靜電吸盤1 〇〇係具有例如由鋁金屬所 形成的基座（金屬基盤）5，在其上層積有下部絕緣層3 與彈性吸附層2，在該等之間具備有吸附電極（內部電極 )4。其中，彈性吸附層2係兼作爲將吸附電極4的上面 側作電性絕緣的上部絕緣層，彈性吸附層2係具備有複數 @ 個高度h(m)的凸部1，支持基板6而形成基板吸附面。 此外，在該彈性吸附層2中相鄰接的凸部1之間係具有不 會與基板6相接觸的上面2b。 在該等例中，彈性吸附層2形成直徑298mm的基板 吸附面，若以吸附力F= 4900Pa (与50gf/cm2 )吸附直徑 3 0 0mm、全體平坦度Wh爲Ιμπι的矽半導體基板時，首先 ，在例1中係具有較大的凸部直徑d(21 mm)，其高度h 亦較高（60μιη)，凸部1的收縮量爲(h/nA) . (F/E) = Q 1.02X10'6 ( m)，可得與矽半導體基板的全體平坦度Wh( m)同等的値，而且基板吸附面中之平均單位面積的凸部 頂面的總面積的比例f爲28.7(%)，因此可極爲良好地 進行基板的冷卻。此外，在例2中，與例1相比，凸部的 高度h低且直徑d亦小，但是藉由縮窄凸部1的間隔a， 雖獲得與例1同等的收縮量（5=1.〇1μιη，但是由於f = 1 2.1 %，爲例1的一半，因此預測基板的冷卻能力會劣於 例1。在例3中，凸部的直徑d與例2相同，爲降低其高 -16- 201026582 mi] 例1 例2 例3 例4 例5 例6 吸附力:F (上段:Pa) (下段:或咖2) 4900 50 4900 50 4900 50 4900 50 4900 50 4900 50 凸部的高度：h (m) 6.00E-05 2.50E-05 1.90E-05 6.00E-05 6.00E-05 7.00E-05 凸部的直徑:d (m) 0.021 0.005 0.005 0.021 0.001 0.004 凸部的間隔:a Cm) 0.0373 0.0137 0.0125 0.0373 0.04 0.015 平均單位面積的 凸部數:n (個/m2) 8.30E+02 6.15E+03 7.39E+03 8.30E+02 7.22E+02 5.13E+03 凸部頂面的面積 :A (m2) 3.46E-04 1.96E-05 1.96E-05 3.46E-04 7.85E-07 1.26E-05 施加於1個凸部 的壓力:^F/n (N) 5.90E+00 7.96E-01 6.63E-01 5.90E+00 6.79E+00 9.55E-01 平均單位面積之 凸部頂面之總面 積的比例:f (%) 28.7 12.1 14.5 28.7 0.1 6.4 彈性係數:E (Pa) 1.00E+06 1.00E+06 1.00E+06 1.00E+09 1.00E+09 1.00E+07 施加於1個凸部 的應力 (Pa) 1.71E+04 4.06E+04 3.38E+04 1.71E+04 8.65E+06 7.60E+04 變形:ε = (7 /E 1.71E-02 4.06E-02 3.38E-02 1.71E-05 8.65E-03 7.60E-03 收縮:5=1ιχε (m) 1.02E-06 1.01E-06 6.42E-07 1.02E-09 5.19E-07 5.32E-07 [實施例] 以下根據實施例，更加具體說明本發明，惟本發明並 非限定於該等內容。 實施例 -18- 201026582 度h，而且更加減小間隔a的情形’（5係成爲例2的大約 一半，但是與例2相比，f提升約20%。另一方面，例4 係將凸部的材料設爲聚醯亞胺的情形，凸部的高度h、直 徑d、間隔a係與例1相同，但是6係與彈性係數呈反比 變小，因此成爲0.001 μιη左右之極小的値。因此，幾乎無 法期待凸部的柔軟性。在例5中，凸部的材料與例4相同 ，但是6係獲得較大的値，而f則極端降低而成爲0.1 ( % )，並無法期待因與基板接觸所造成的熱傳導。此外， 在例6中，係將凸部的各尺寸或配置最適化而獲得<5 = 0_5 32μιη，但是 f 則限於 6.4 ( % )。 201026582 備妥厚度ΙΟΟμιη、3 00mmX300mm的薄膜矽氧薄片（ SANSHIN ENTERPRISE股份有限公司製，微矽氧薄片的 單面梨皮紋理類型，型號NyKSA-100-50)，切成直徑 2 9 8mm的圓形，如後所述形成爲彈性吸附層2。此外，使 用在厚度50μιη的聚醯亞胺薄片的單面層積有厚度9μηι之 銅箔的銅箔層積板（宇部興產股份有限公司製，銅箔層積 板「UPISEL (註冊商標）Ν」），在銅箔面進行掩罩（ φ masking )，利用腐蝕性蝕刻液形成具有半月型圖案（直 徑294mm的半圓狀）之雙極型（電極間隔2mm)的吸附 電極4，將直徑298mm的聚醯亞胺薄片形成爲下部絕緣層 3。接著，如第2圖所示，在銅箔層積板的銅箔面側，隔 著厚度ΙΟμιη的環氧系鍵結薄片（未圖示），以矽氧薄片 的梨皮紋理面爲表側的方式予以接著。經一體貼合的薄片 係在內部具有直徑6mm的冷卻水水路7，對於板厚15mm 、直徑298mm的鋁製基座5，隔著前述環氧系鍵結薄片予 φ 以貼著，使矽氧薄片的梨皮紋理面成爲表側，亦即成爲基 板吸附面。 接著，在上述微矽氧薄片的梨皮紋理面，隔著不銹鋼 製的預定遮罩，以空氣式噴砂將粒徑數μιη的矽粒子在一 定時間內均一照射而得預定的上面2b。亦即，如表1之例 1所不，形成高度1ι=60μιη、直徑d=21mm、相鄰接的凸 部的間隔a= 37.3mm，將梨皮紋理面設爲頂面的凸部1， 獲得在基板吸附面具備有平均單位面積lm2爲n=830個 的凸部1的彈性吸附層2。此外，爲了將吸附電極4連接 -19 - 201026582 在外部電源10，由吸附電極4將電位供給線9通過絕緣套 筒8取出至外部，使實施例1之靜電吸盤101完成。 爲了確認上述所得之靜電吸盤101在當以吸附力F = 49 OOP a吸附/保持基板6時，彈性吸附層2中的凸部1以 什麼程度相接觸，而進行以下試驗。將直徑3 00mm、厚度 10mm、及全體平坦度Wh爲Ιμιη的透明派熱克斯（Pyrex )玻璃板載置於由凸部1的頂面所構成的基板吸附面，藉 由具有平面台座的衝壓機予以加壓。此時，以玻璃板的本 @ 身重量與所施加的壓力成爲平均單位面積爲合計49 OOPa 的方式加以管理。首先，在經加壓後的狀態下，通過透明 派熱克斯玻璃板，經以目測確認凸部1的接觸狀態，確認 出所有凸部1以其頂面相接觸。順帶一提，所有凸部1與 玻璃板相接觸的情形與未相接觸的情形相比，由於光的干 涉條紋的態樣有所不同，因此可藉由目測來判別兩方的狀 態。此外，以其他試驗方法而言，在玻璃板與靜電吸盤 101的基板吸附面之間夾入感壓紙，與上述同樣地藉由衝 _ 壓機予以加壓，確認出感壓紙係在所有凸部1的部位起反 應’且所有凸部1以其頂面相接觸。此外，以比較實驗而 言，在將玻璃板的本身重量與所施加的壓力的合計設爲 1/2且平均單位面積爲合計245 OPa的條件下進行相同的實 驗的結果，確認出所有凸部1中的3分之2以其頂面與玻 璃板相接觸。 〔實施例2〕 -20- 201026582 在厚度25 μιη的聚醯亞胺薄片，將貼合有表面被處理 成梨皮紋理的厚度ΙΟΟμιη的矽氧薄片的複合薄片11、厚 度13μιη的丙烯酸系環氧鍵結薄片12、及厚度12μιη的電 解銅范 13 (古河銅箱（股）（Furukawa Circuit Foil Co. )製）分別切成直徑298mm的圓形，利用衝壓成型，以 3MPa、170°C的條件予以層積化。 爲了將上述中經層積化的衝壓體的單面側的銅箔形成 e 爲雙極電極，將其中心作爲對稱軸，藉由蝕刻處理形成經 1 〇分割後之相鄰的扇形形狀電極（相鄰接的電極間距離 3mm )。接著，以隔著切成直徑298mm之與上述相同厚度 13μιη的丙烯酸系環氧鍵結薄片12，覆蓋在上述中蝕刻所 得的電極面的方式，叠合厚度50 μιη的聚醯亞胺薄片14( 東麗.杜邦（股）製，Kapton薄膜型式200Η )，藉由與 上述相同的條件，予以衝壓成型而使其一體層積。 接著，使厚度55μιη的Kaptoti單面黏著帶（Okamoto 參 股份有限公司1030E )接著在上述中所得之層積體的梨皮 紋理面的全面，此外，爲了在電極接合端子，將以聚醯亞 胺薄片14覆蓋的電極面朝向上側而載置於熱板上，一面 加熱，一面將銅製端子作焊接。 接著，在與上述中所使用者爲相同的Kapton單面黏 著帶，以直徑 23mm之開口部的中心被配置在邊長爲 35mm的正三角形的各頂點的方式鑽開複數孔而形成爲圖 案遮罩，將其配置在氧化鋁多孔真空吸盤上，以使上述所 得之層積體的黏著帶側相對向的方式載置於該圖案遮罩上 •21 - 201026582 ，以成爲1 Pa的方式作真空吸引。藉此’形成與圖案遮罩 的孔徑與厚度相對應的凹凸’如後所述’在最後將KaPton 單面黏著帶剝下之後’將具有梨皮紋理面的矽氧薄片作爲 頂面，而形成表2所示之凸部。 在以氧化鋁多孔真空吸盤作吸引的狀態下，直接在安 裝有銅製端子之側的聚醯亞胺薄片面，將矽氧接著劑15 ( 邁圖高新材料日本有限公司（Momentive Performance Materials Japan LLC)，型式TSE3 3 3 1 )以成爲厚度150μιη的方式 作塗佈之後，載置板厚16mm及直徑298mm且在內部具有 冷卻水水路的鋁製基座16，將正在吸引真空吸盤的泵的電 源切斷，在消泡腔室內使其消泡1小時，之後在熱板上將 全體加熱至1 40 °C，經數小時使矽氧接著劑硬化。之後， 使經一體化者由真空吸盤脫離而進行清掃，藉由剝下覆蓋 具有梨皮紋理面之矽氧薄片的Kapton單面黏著帶，使第3 圖所示之具備有凸部1之實施例2之靜電吸盤（No.1)完 成。 此外’以該實施例中所得之靜電吸盤的變形例而言， 除了形成上述表1所記載之例3中的凸部以外，係與上述 相同地獲得本發明之實施例之靜電吸盤（Ν〇·2)。 -22- 201026582 [表2] 實施例2 No.l No.2 吸附力:F (Pa) 4900 4900 凸部的高度:h (m) 5.00E-05 1.90E-05 凸部的直徑 (m) 0.023 0.005 凸部的間隔:a (m) 0.035 0.0125 平均單位面積的凸部數m (個/m2) 9.43E+02 7.39E+03 凸部頂面的面積:A (m2) 4.15E-04 1.96E-05 施加於1個凸部的壓力··gF/n (N) 5.20E+00 6.63E-01 平均單位面積之凸部頂面之總面積 的比例J (%) 39.1 14.5 彈性係數：E (Pa) 1.00E+06 1.00E+06 施加於1個凸部的應力:σ =f/A (Pa) 1.25E+04 3.38E+04 變形:ε = σ/Ε 1.25E-02 3.38E-02 收縮:<5=hx ε (m) 6.26E-07 6.42E-07 關於上述所得之No. 1及No.2的靜電吸盤，分別搭載 於離子注入裝置，一面以供給電壓± 750V吸附/保持φ 300mm的矽晶圓，一面對該矽晶圓，以平均離子束功率 450W、注入量lxlO15個/cm2的條件進行離子注入。此時 ，在鋁製基座的水路，以2L/miri的條件將冷卻水予以排 水。接著，以耐熱標籤（Thermo Label )量測離子注入時 的晶圓表面溫度，結果當以No.l的靜電吸盤作吸附/保持 時，係可將溫度上升抑制爲未達48°C，若爲No.2的靜電 -23- 201026582 吸盤，則可將溫度上升抑制爲未達89°C。此外，若爲使用 No.1的靜電吸盤的試驗，在使離子束功率增大至600W時 ，在與上述相同的注入量中亦得溫度上升爲未達60 Ό的結 果。此可謂爲匹敵伴隨氣體冷卻之習知靜電吸盤的性能。 【圖式簡單說明】 第1圖係顯示本發明之靜電吸盤的說明圖，（a)係顯示 彈性吸附層中之凸部的態樣的平面模式圖，（b)係顯示由 _ A-A剖面方向所觀看的靜電吸盤的態樣的剖面模式圖。 第2圖係顯示本發明之實施例1之靜電吸盤的說明圖 ，（a)係顯示由彈性吸附層所觀看的平面模式圖，（b)係顯 示由B-B剖面方向所觀看的靜電吸盤的態樣的剖面模式圖 〇 第3圖係由側面觀看本發明之實施例2之靜電吸盤的 剖面模式圖。 【主要元件符號說明】 1 :凸部 2 :彈性吸附層 2b :彈性吸附層之凸部以外的上面 3 :下部絕緣層 4 ·_吸附電極 5 :基座 6 :基板 -24- 201026582 7 :水路 8 :絕緣套筒 9 :電位供給線 1 〇 :電源 1 1 .複合薄片 12 :鍵結薄片 1 3 :電解銅箔 1 4 :聚醯亞胺薄片 1 5 :矽氧接著劑 1 6 :基座 100、101 :靜電吸盤Variation is used, but in the case of a wafer having a diameter of 300 mxn, the "total flatness" is about 1 μ. Therefore, the overall flatness Wh of the substrate to which the electrostatic chuck of the present invention is applied can be formed in a range of Ο.ίμιη to ΙΟμπι. In the present invention, as described above, when the amount of contraction (compression distance) of the convex portion when the substrate is adsorbed and held by the electrostatic chuck is 0.5 times or more of the total flatness Wh of the substrate, The elastic modulus, shape, and configuration of the elastic adsorption layer are set. At this time, regarding the adsorption force F of the adsorption/φ holding substrate, at least the adsorption force required for the adsorption of the germanium wafer or the glass substrate which is currently mainly used is considered, and in the present invention, it is formed in consideration of the adsorption force F. When the adsorption/holding is performed at 1 OOP a or more. In the electrostatic chuck according to the present invention, if an elastic adsorption layer including a plurality of convex portions made of an elastic material is used as a substrate adsorption surface, and the substrate is adsorbed/held by the elastic adsorption layer, the specific structure thereof is There is no particular limitation. For example, a so-called electrostatic chuck having an internal electrode and having a laminated structure can be attached to a metal substrate having a flow path such as a flow-through cooling medium. Composition. Then, when a voltage is applied to the internal electrode, an elastic adsorption layer may be provided on the upper insulating layer (substrate adsorption surface side insulating layer) on which the electrostatic chuck sheet is formed so that the elastic adsorption layer becomes the substrate adsorption surface, or The elastic adsorption layer can also serve as an upper insulating layer. Further, it may be a bipolar electrostatic chuck having a positive electrode and a negative electrode as internal electrodes, or a unipolar type in which only a positive (negative) electrode is used as an internal electrode and a negative (positive) side is grounded. Further, the material or shape of the material of the upper insulating layer or the lower insulating layer (metal base-side insulating layer) -14-201026582 or the internal electrode is not particularly limited. (Effect of the Invention) According to the present invention, it is possible to uniformly absorb and hold the substrate on the substrate adsorption surface by absorbing the warpage or deflection which is inevitably provided in the semiconductor wafer or the glass substrate and the like, and transmitting the convex portion of the elastic adsorption layer. Therefore, it is possible to effectively reduce the contamination of the φ particles and the like from the substrate adsorption surface to the back surface of the substrate, and to transfer the heat of the substrate accumulated in the process to the electrostatic chuck to the maximum extent, and to efficiently cool the substrate through the electrostatic chuck. [Embodiment] The present invention will be further described in detail below using the drawings. In Table 1, the case of the silicone rubber which is made of the elastic modulus IMPa which is also soft in rubber (Examples 1 to 3) is shown as a representative of engineering plastics, which is also generally used in electrostatic chucks. In the case where the polyimide having a modulus of elasticity of 1 Gpa is used (Examples 4 and 5) and the elastic modulus of 1 OMpa which is also hard in rubber, the examples of the convex portions of the elastic adsorption layer are respectively exemplified. . Further, Fig. 1(a) is a plan explanatory view showing the arrangement relationship of the convex portions in the table 1. In the first diagram (a), the convex portion 1 having the diameter d (m) is arranged at each vertex of the equilateral triangle having the side length a (m), and one of the convex portions 1 c is centered. The convex portion 1b, the convex portion lh, the convex portion Id, the convex portion if, and the convex portion le are arranged in the direction of the convex portion lb in the clockwise direction. The convex portions 1 show a part of the electrostatic chuck 100, and are distributed in a manner of forming the substrate adsorption surface of the electrostatic chuck 100 by the convex portion 1 in an arrangement state having the relationship shown above in -15-201026582. Further, in Fig. 1(b), the electrostatic chuck 1 观看 viewed from the A-A cross-sectional direction in Fig. 1(a) is shown. The electrostatic chuck 1 has a susceptor (metal base) 5 made of, for example, aluminum metal, and a lower insulating layer 3 and an elastic adsorption layer 2 are laminated thereon, and an adsorption electrode (internal electrode) is provided between the electrostatic chucks 4. The elastic adsorption layer 2 also serves as an upper insulating layer for electrically insulating the upper surface side of the adsorption electrode 4, and the elastic adsorption layer 2 is provided with a plurality of convex portions 1 having a height h (m), and is formed by supporting the substrate 6. Substrate adsorption surface. Further, between the adjacent convex portions 1 in the elastic adsorption layer 2, there are provided upper faces 2b which are not in contact with the substrate 6. In these examples, the elastic adsorption layer 2 forms a substrate adsorption surface having a diameter of 298 mm, and when a semiconductor substrate having a diameter of 300 mm and an overall flatness Wh of Ιμπ is adsorbed by an adsorption force F = 4900 Pa (with 50 gf/cm 2 ), first In Example 1, it has a large convex diameter d (21 mm), and its height h is also high (60 μm), and the contraction amount of the convex portion 1 is (h/nA). (F/E) = Q 1.02 X10'6 (m), which is equivalent to the total flatness Wh(m) of the germanium semiconductor substrate, and the ratio f of the total area of the convex top surface of the average unit area of the substrate adsorption surface is 28.7 (%). Therefore, the cooling of the substrate can be performed extremely well. Further, in Example 2, the height h of the convex portion was lower and the diameter d was smaller than that of Example 1, but by narrowing the interval a of the convex portion 1, the same amount of shrinkage as in Example 1 was obtained (5=1). 〇1μιη, but since f = 1 2.1%, which is half of the example 1, the cooling ability of the substrate is predicted to be inferior to that of Example 1. In Example 3, the diameter d of the convex portion is the same as in Example 2, in order to lower its height - 16- 201026582 mi] Example 1 Case 2 Case 3 Case 4 Case 5 Case 6 Adsorption: F (upper paragraph: Pa) (lower section: or coffee 2) 4900 50 4900 50 4900 50 4900 50 4900 50 4900 50 Height of the convex part: h (m) 6.00E-05 2.50E-05 1.90E-05 6.00E-05 6.00E-05 7.00E-05 Diameter of the convex part: d (m) 0.021 0.005 0.005 0.021 0.001 0.004 Interval of convex parts: a Cm ) 0.0373 0.0137 0.0125 0.0373 0.04 0.015 Average number of convex parts per unit area: n (pieces/m2) 8.30E+02 6.15E+03 7.39E+03 8.30E+02 7.22E+02 5.13E+03 Top surface of the convex part Area: A (m2) 3.46E-04 1.96E-05 1.96E-05 3.46E-04 7.85E-07 1.26E-05 Pressure applied to one convex part: ^F/n (N) 5.90E+00 7.96E-01 6.63E-01 5.90E+00 6.79E+00 9.55E-01 The ratio of the total area of the top surface of the convex part per unit area: f (%) 28.7 12.1 14.5 28.7 0.1 6.4 Elasticity: E (Pa) 1.00E+06 1.00E+06 1.00E+06 1.00E+09 1.00E+09 1.00E+07 Stress applied to one convex part ( Pa) 1.71E+04 4.06E+04 3.38E+04 1.71E+04 8.65E+06 7.60E+04 Deformation: ε = (7 /E 1.71E-02 4.06E-02 3.38E-02 1.71E-05 8.65E-03 7.60E-03 Shrinkage: 5=1ιχε (m) 1.02E-06 1.01E-06 6.42E-07 1.02E-09 5.19E-07 5.32E-07 [Embodiment] Hereinafter, according to the embodiment, The present invention is specifically described, but the present invention is not limited to the contents. Example -18-201026582 degrees h, and the situation of interval a is further reduced' (5 is about half of the example 2, but f is about 20% higher than that of example 2. On the other hand, the example 4 is convex In the case where the material of the portion is made of polyimide, the height h, the diameter d, and the interval a of the convex portion are the same as those in the first example, but the 6-series is inversely proportional to the elastic modulus, and thus the crucible is extremely small around 0.001 μm. Therefore, the flexibility of the convex portion was hardly expected. In Example 5, the material of the convex portion was the same as in Example 4, but the 6-system obtained a large enthalpy, and f was extremely lowered to become 0.1 (%), and it was impossible to expect In addition, in Example 6, the size or arrangement of the convex portions was optimized to obtain <5 = 0_5 32 μιη, but f was limited to 6.4 (%). 201026582 Prepared thickness ΙΟΟμιη, 3 00mmX300mm thin film enamel sheet (made by SANSHIN ENTERPRISE Co., Ltd., single-sided pear skin texture type of micro-oxygen sheet, model NyKSA-100-50), cut into a circle with a diameter of 2 9 8mm, as described later For the elastic adsorption layer 2. In addition, used in thickness 50μι A copper foil laminated board of copper foil having a thickness of 9 μm is laminated on one side of the y-polyimide sheet (made by Ube Industries, Ltd., copper foil laminated board "UPISEL (registered trademark) Ν"), in copper The foil surface was masked (φ masking), and a bipolar type (electrode spacing 2 mm) adsorption electrode 4 having a half moon pattern (a semicircular shape of 294 mm) was formed using a corrosive etching solution, and a polyimide film having a diameter of 298 mm was formed. The lower insulating layer 3 is formed as a lower insulating layer 3. As shown in Fig. 2, an epoxy-based bonded sheet (not shown) having a thickness of ΙΟμηη is placed on the copper foil surface side of the copper foil laminated board, and a silicon oxide sheet is used. The sheet surface of the pear skin is attached to the front side. The integrally bonded sheet has a cooling water passage 7 having a diameter of 6 mm inside, and the epoxy base 7 having a thickness of 15 mm and a diameter of 298 mm is interposed therebetween. The flaky sheet is attached to φ so that the surface of the pear skin of the bismuth oxide sheet becomes the front side, that is, the substrate adsorption surface. Next, a predetermined mask made of stainless steel is interposed on the surface of the pear skin of the micro bismuth oxide sheet.空气 粒径 粒径 粒径 粒径 粒径 粒径 粒径 空气 空气 空气The predetermined upper surface 2b is uniformly irradiated for a certain period of time. That is, as shown in the first example of Table 1, the height is 1 ι=60 μιη, the diameter d is 21 mm, and the interval between adjacent convex portions is a = 37.3 mm. The convex portion 1 having the top surface of the pear skin texture surface was obtained, and the elastic adsorption layer 2 having the convex portion 1 having an average unit area lm2 of n = 830 on the substrate adsorption surface was obtained. Further, in order to connect the adsorption electrode 4 - - 201026582 In the external power source 10, the potential supply line 9 is taken out to the outside through the insulating sleeve 8 by the adsorption electrode 4, and the electrostatic chuck 101 of the first embodiment is completed. In order to confirm that the electrostatic chuck 101 obtained as described above adsorbs/holds the substrate 6 with the adsorption force F = 49 OOP a , the convex portions 1 in the elastic adsorption layer 2 are brought into contact with each other, and the following test is conducted. A transparent Pyrex glass plate having a diameter of 300 mm, a thickness of 10 mm, and an overall flatness Wh of Ιμη is placed on the substrate adsorption surface composed of the top surface of the convex portion 1, and is punched by a flat pedestal. The machine is pressurized. At this time, the weight of the glass plate and the applied pressure are managed so that the average unit area is 49 OOPa in total. First, in the pressed state, the contact state of the convex portion 1 was visually confirmed by the transparent Pyrex glass plate, and it was confirmed that all the convex portions 1 were in contact with each other with the top surface thereof. Incidentally, the state in which all the convex portions 1 are in contact with the glass plate is different from that in the case where the convex portions 1 are not in contact with each other, and the state of the two sides can be discriminated by visual observation. Further, in another test method, the pressure sensitive paper was sandwiched between the glass plate and the substrate suction surface of the electrostatic chuck 101, and pressurized by a punch press in the same manner as described above, and it was confirmed that the pressure sensitive paper was attached to all. The portion of the convex portion 1 reacts 'and all the convex portions 1 are in contact with the top surface thereof. In addition, in the comparative experiment, the results of the same experiment were carried out under the condition that the total weight of the glass plate and the applied pressure were 1/2 and the average unit area was 245 OPa, and all the convex portions were confirmed. Two-thirds of the 1 is in contact with the glass plate with its top surface. [Example 2] -20- 201026582 Polyimide sheet having a thickness of 25 μm, a composite sheet 11 having a thickness of 矽μηη having a surface treated with a pear skin texture, and an acrylic epoxy having a thickness of 13 μm The bonded sheet 12 and the electrolytic copper van 13 (manufactured by Furukawa Circuit Foil Co., Ltd.) having a thickness of 12 μm were cut into a circular shape having a diameter of 298 mm, and were subjected to press forming at 3 MPa and 170 ° C. Consolidate. In order to form a copper foil on one side of the above-mentioned intermediate laminated body into a bipolar electrode, the center thereof is taken as an axis of symmetry, and an adjacent fan-shaped electrode which is divided by 1 形成 is formed by etching treatment ( The distance between adjacent electrodes is 3 mm). Then, the acrylic epoxy-bonded sheet 12 having the same thickness of 298 mm and having the same thickness of 13 μm was cut over the electrode surface obtained by etching in the above-mentioned manner, and the polyimide film 14 having a thickness of 50 μm was laminated ( Toray Dupont Co., Ltd., Kapton film type 200 Η), was formed into a laminate by press forming under the same conditions as above. Next, a Kaptoti single-sided adhesive tape (Okamoto Co., Ltd. 1030E) having a thickness of 55 μm was applied to the entire surface of the pear skin texture of the laminate obtained in the above, and further, in order to bond the terminals, the polyimide was used. The electrode surface covered by the sheet 14 is placed on the hot plate toward the upper side, and the copper terminal is welded while being heated. Next, in the Kapton single-sided adhesive tape which is the same as the above-mentioned user, a plurality of holes are drilled so that the center of the opening of the diameter of 23 mm is disposed at each vertex of the equilateral triangle having a side length of 35 mm, and the pattern is covered. The cover is placed on the alumina porous vacuum chuck so that the adhesive tape side of the laminate obtained above is placed on the pattern mask in the manner of 21 - 201026582, and the vacuum is 1 Pa. attract. Thereby, 'the unevenness corresponding to the aperture and the thickness of the pattern mask is formed', as described later, after the KaPton single-sided adhesive tape is finally peeled off, the silicon oxide sheet having the texture of the pear skin is used as the top surface to form a top surface. The convex portion shown in Table 2. In the state of being attracted by the alumina porous vacuum chuck, the epoxy-based adhesive 15 is directly applied to the surface of the polyimide sheet on the side where the copper terminal is mounted (Momentive Performance Materials Japan LLC) The type TSE3 3 3 1 ) is applied so as to have a thickness of 150 μm, and an aluminum base 16 having a thickness of 16 mm and a diameter of 298 mm and having a cooling water passage therein is placed, and the power source of the pump that is sucking the vacuum chuck is cut. After breaking, it was defoamed in the defoaming chamber for 1 hour, after which the whole was heated to 1 40 ° C on a hot plate, and the niobium oxide was hardened over several hours. Thereafter, the integrated person is removed from the vacuum chuck and cleaned, and the Kapton single-sided adhesive tape covering the tantalum oxide sheet having the texture of the pear skin is peeled off, so that the implementation of the convex portion 1 shown in FIG. 3 is performed. The electrostatic chuck (No. 1) of Example 2 was completed. Further, in the modification of the electrostatic chuck obtained in the above embodiment, the electrostatic chuck of the embodiment of the present invention was obtained in the same manner as described above except that the convex portion in the example 3 described in Table 1 above was formed. ·2). -22- 201026582 [Table 2] Example 2 No.l No.2 Adsorption force: F (Pa) 4900 4900 Height of convex part: h (m) 5.00E-05 1.90E-05 Diameter of convex part (m) 0.023 0.005 Interval of convex parts: a (m) 0.035 0.0125 Number of convex parts per unit area m (pieces/m2) 9.43E+02 7.39E+03 Area of top surface of convex part: A (m2) 4.15E-04 1.96 E-05 Pressure applied to one convex part··gF/n (N) 5.20E+00 6.63E-01 Ratio of the total area of the top surface of the convex part per unit area J (%) 39.1 14.5 Elastic coefficient: E (Pa) 1.00E+06 1.00E+06 Stress applied to one convex part: σ = f / A (Pa) 1.25E + 04 3.38E + 04 Deformation: ε = σ / Ε 1.25E-02 3.38E- 02 Shrinkage: <5=hx ε (m) 6.26E-07 6.42E-07 The electrostatic chucks of No. 1 and No. 2 obtained above are mounted on an ion implantation apparatus and are supplied with a supply voltage of ±750V/ The tantalum wafer of φ 300 mm was held, and ion implantation was performed on the tantalum wafer with an average ion beam power of 450 W and an injection amount of 1×10 15 pieces/cm 2 . At this time, the cooling water was drained in a water path of the aluminum base at a condition of 2 L/miri. Next, the surface temperature of the wafer during ion implantation is measured with a Thermo Label, and as a result, when the electrostatic chuck of No. 1 is used for adsorption/holding, the temperature rise can be suppressed to less than 48 ° C. No. 2 static -23- 201026582 suction cup, can suppress the temperature rise to less than 89 °C. Further, in the test using the electrostatic chuck of No. 1, when the ion beam power was increased to 600 W, the temperature was increased to less than 60 Torr in the same injection amount as described above. This is comparable to the performance of conventional electrostatic chucks with gas cooling. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing an electrostatic chuck of the present invention, wherein (a) is a plan view showing a state of a convex portion in an elastic adsorption layer, and (b) is a sectional view showing a direction of _AA. A cross-sectional schematic view of the aspect of the electrostatic chuck being viewed. Fig. 2 is an explanatory view showing an electrostatic chuck according to Embodiment 1 of the present invention, wherein (a) shows a planar pattern view viewed from an elastic adsorption layer, and (b) shows a state of an electrostatic chuck viewed from a BB sectional direction. Fig. 3 is a cross-sectional view showing the electrostatic chuck of the second embodiment of the present invention as seen from the side. [Description of main component symbols] 1 : convex portion 2 : elastic adsorption layer 2 b : upper surface of the elastic adsorption layer other than the convex portion 3 : lower insulating layer 4 · _ adsorption electrode 5 : pedestal 6 : substrate - 24 - 201026582 7 : waterway 8 : Insulation sleeve 9 : Potential supply line 1 〇: Power supply 1 1 . Composite sheet 12 : Bonded sheet 1 3 : Electrolytic copper foil 1 4 : Polyimine sheet 1 5 : Niobium oxide 1 6 : Base 100, 101: electrostatic chuck
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