201222716 六、發明說明： 【發明所屬之技術領域】 本發明是有關在基盤上具備一內部具有工件吸附電極 的靜電吸盤之靜電吸盤裝置及其製造方法。 【先前技術】 靜電吸盤裝置是廣泛使用於半導體裝置或液晶面板裝 置的製造製程等，但近年來隨著半導體裝置等的高密度化 ，微粒的管理形成一個重要的課題。於是，有使用複數的 突起部來支撐半導體晶圓或玻璃基板等的工件（被吸附物 )，具有浮雕（Emboss )狀的工件吸附面之靜電吸盤裝置 爲人所知。其目的是減少對工件的接觸面積，而儘可能地 減少附著於工件的背面之微粒》 有關具有此浮雕狀的吸附面之靜電吸盤裝置是例如曰 本特開2005-33 1 25號公報（專利文獻1 )或特開2008-181913號公報（專利文獻2)等所揭示，一般是在吸附工 件的電介體（dielectric)的表面設置凸部（突起部），在 其電介體的本體內部形成工件吸附電極，或在電介體的下 層配置工件吸附電極。 另一方面，在日本特開2 008- 1 3 5736號公報（專利文 獻3)中揭示有單極型的靜電吸盤裝置，其係於絕緣性基 體的表面所形成的突起部的前端設置導電性領域，且對於 突起部間所形成的凹陷（凹部），藉由離子鍍敷或濺射等 的導電性塗佈來形成工件吸附電極。這是使導電性或半導201222716 VI. Description of the Invention: [Technical Field] The present invention relates to an electrostatic chuck device having an electrostatic chuck having a workpiece adsorption electrode therein, and a method of manufacturing the same. [Prior Art] The electrostatic chuck device is widely used in a manufacturing process of a semiconductor device or a liquid crystal panel device. However, in recent years, with the increase in density of semiconductor devices and the like, management of fine particles has become an important issue. Therefore, an electrostatic chuck device having a workpiece-adsorbing surface having an Emboss shape is known to support a workpiece (adsorbed material) such as a semiconductor wafer or a glass substrate by using a plurality of protrusions. The purpose of the invention is to reduce the contact area with respect to the workpiece and to reduce the particles adhering to the back surface of the workpiece as much as possible. The electrostatic chuck device having the embossed adsorption surface is, for example, 曰本特开 2005-33 1 25 (patent As disclosed in Japanese Laid-Open Patent Publication No. 2008-181913 (Patent Document 2), it is generally provided that a convex portion (protrusion portion) is provided on a surface of a dielectric on which a workpiece is adsorbed, in the body of the dielectric body. The part forms a workpiece adsorption electrode, or a workpiece adsorption electrode is disposed under the dielectric layer. On the other hand, a unipolar electrostatic chuck device is disclosed in which the conductivity is provided at the tip end of the protruding portion formed on the surface of the insulating substrate, in Japanese Laid-Open Patent Publication No. H02-135356 (Patent Document 3). In the field, the workpiece adsorption electrode is formed by conductive coating such as ion plating or sputtering on the recess (concave portion) formed between the protrusions. This is to make conductivity or semi-conductive
S -5- 201222716 性的晶圓（工件）接觸於突起部的前端的導電性領域，防 止突起部與工件的接觸阻抗所造成的電壓降下，使工件與 吸附電極之間不會產生高電場的領域，且構成單極型的吸 附電極，使工件與吸附電極之間的電場的方向形成一方向 ，使其方向的控制容易，藉此抑制周邊的微粒吸引至晶圓 〇 〔先行技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開2〇〇5-33125號公報 〔專利文獻2〕特開2008-1 8 1 9 1 3號公報 〔專利文獻3〕特開2008- 1 3 5736號公報 【發明內容】 (發明所欲解決的課題） 在具有浮雕狀的吸附面之靜電吸盤裝置中，如上述專 利文獻1及2所記載，在表面具備突起部之電介體的本體內 部形成吸附電極，或在此電介體的下層配置吸附電極的形 態，會有在工件吸附電極與工件之間產生距離，無法充分 地顯現吸附力的情形。特別是近年來使用解像度高的EUV (Extreme Ultra Violet)曝光機時，因爲焦點深度（Z方 向）極淺，且平面方向（X-Y方向）也被要求高精度，所 以在電介體使用可平坦加工，熱膨脹性低的石英玻璃。可 是，石英玻璃與陶瓷不同，難以在其內部埋設平坦的吸附 電極。並且，在所欲使電介體形成薄時，石英玻璃相較於S -5- 201222716 The wafer (workpiece) is in contact with the conductive field at the front end of the protrusion, preventing the voltage drop caused by the contact resistance between the protrusion and the workpiece, so that no high electric field is generated between the workpiece and the adsorption electrode. In the field, and forming a unipolar adsorption electrode, the direction of the electric field between the workpiece and the adsorption electrode is formed in one direction, and the direction control is easy, thereby suppressing the attraction of the surrounding particles to the wafer 〇 [prior art literature] [ [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. 2008- 1 3 5736 In the electrostatic chuck device having the embossed adsorption surface, as described in the above Patent Documents 1 and 2, the adsorption electrode is formed inside the body of the dielectric body having the protrusion on the surface. Or, in the form in which the adsorption electrode is disposed in the lower layer of the dielectric body, a distance may be generated between the workpiece adsorption electrode and the workpiece, and the adsorption force may not be sufficiently exhibited. In particular, in recent years, when an EUV (Extreme Ultra Violet) exposure machine with a high resolution is used, since the depth of focus (Z direction) is extremely shallow and the plane direction (XY direction) is also required to be highly precise, it is possible to use flat processing in a dielectric. , quartz glass with low thermal expansion. However, unlike quartz, quartz glass is difficult to embed a flat adsorption electrode inside. Moreover, when the dielectric is to be thinned, the quartz glass is compared to
-6- 201222716 陶瓷，強度不足容易破裂。 另一方面，如上述專利文獻3所記載的靜 那樣，若在突起部間的凹陷單獨具備吸附電極 吸附電極的表面藉由蒸鏟或離子鍍敷來形成由 所構成的保護膜（專利文獻3的段落0032 )， 保護膜與絕緣性基體的突起部是形成異種材米 ，所以無法排除放電之虞。 於是，本發明者等針對可顯現充分的吸附 電之虞的靜電吸盤裝置來深入檢討的結果，發 具備吸附工件的工件吸附電極之靜電吸盤，藉 突起部貫通，在基盤上配設靜電吸盤，且使絕 突起部的外周面與靜電吸盤的工件吸附電極之 上述課題，完成本發明。 因此，本發明的目的是在於提供可一邊儘 微粒附著至工件，一邊使充分的吸附力顯現的 放電之虞的靜電吸盤裝置及其製造方法。 又，本發明的別的目的是在於提供適於製 吸盤裝置的製造方法。 (用以解決課題的手段） 亦即，本發明爲一種靜電吸盤裝置，係於 靜電吸盤，該靜電吸盤係於內部具有用以吸附 吸附電極，其特徵爲： 基盤係具有貫通靜電吸盤而突出於靜電吸 電吸盤裝置 ，則即使在 聚醯亞胺等 也會因爲該 的接合界面 力且排除放 現對於內部 由使基盤的 緣構件介於 間，可解決 可能地抑制 同時，排除 造上述靜電 基盤上具備 工件的工件 盤的表面之 201222716 複數的突起部，藉由該突起部的頂面來形成浮雕狀的工件 吸附面，且在突起部的外周面與靜電吸盤的工件吸附電極 之間介有絕緣構件。 又，本發明爲一種靜電吸盤裝置的製造方法，係製造 靜電吸盤裝置的方法，該靜電吸盤裝置係於基盤上具備靜 電吸盤，該靜電吸盤係於2個的絕緣薄板構件之間具有用 以吸附工件的工件吸附電極，其特徵爲： 使用：在表面具有複數個突起部的基盤、及在對應於 該突起部的位置工件吸附電極具有開口部，該開口部以絕 緣性的接合劑充塡的靜電吸盤， 首先，以能夠通過工件吸附電極的開口部來貫通靜電 吸盤的表背面間之方式，在靜電吸盤中形成比開口部小的 大小的貫通孔， 其次，使k盤的突起部插通於上述貫通孔，而將靜>電 吸盤疊合於基盤，藉由突出於靜電吸盤的表面之突起部的 頂面來形成浮雕狀的工件吸附面。 本發明的靜電吸盤裝置係對於內部具有工件吸附電極 的靜電吸盤，以基盤的突起部能夠貫通的方式，在基盤上 配設有靜電吸盤而成，突出於靜電吸盤側的複數個突起部 的頂面會形成浮雕狀的工件吸附面。有關突起部的形狀， 首先，其頂面是藉由鏡面處理或之後的硏磨等來進行平坦 化處理爲佳。又，有關突起部的橫剖面形狀是圓形、橢圓 形、三角形以上的多角形等，並無特別加以限制，但最好 突起部的外周面被倒角，較理想是圓形或接近的形狀爲佳 -8- a 201222716 又’有關以從靜電吸盤的表面到突起部的頂面爲止的 高度來表示的突起部的突出高，由確實地排除微粒等的異 物恐有附著於工件的背面之虞的觀點來看，較理想5μιη以 上爲佳，更理想是5μηι以上20μιη以下爲佳。又，由吸附力 顯現的觀點來看，以從靜電吸盤的工件吸附電極的表面到 突起部的頂面爲止的高度來表示的距離，較理想是50μιη以 上300μηι以下爲佳，更理想是50μιη以上ΙΟΟμηι以下爲佳。 在本發明中，基盤並無特別加以限制，只要是使用低 發塵性的材料來形成者即可，除了玻璃製或石英玻璃製的 基盤以外，可舉聚醯亞胺等的樹脂製，或鋁、不鏽鋼等金 屬製的基盤等。此時，若使用與工件同材質者，或線膨脹 係數更接近者，則可防止因熱膨脹所造成的形狀變化，在 與工件之間產生摩擦，抑制多餘的發塵。又，若以熱膨脹 率爲lppm以下的低熱膨脹材來形成基盤，則可防止上述那 樣的摩擦發生的同時，可維持尺寸精度的點極佳。如此的 材料例，可舉石英玻璃或低熱膨脹玻璃陶瓷，因爲比起普 通的玻璃，熱膨脹極小，所以由如此的低熱膨脹材所構成 的基盤，可符合低發塵性的觀點，且可滿足使用EUV曝光 機時所被要求的精度。 又，有關在基盤設置突起部的手段，例如可舉經由配 合突起部的配置圖案的遮罩來噴沙加工或進行蝕刻處理的 方法等。亦可爲該等以外的方法，但在由同一材料來加工 突起部及突起部以外的基盤本體之下，突起部的形成容易-6- 201222716 Ceramics, which are not strong enough to break. On the other hand, the surface of the adsorption electrode adsorption electrode is provided with a protective film formed by a shovel or ion plating on the surface of the adsorption electrode adsorption electrode in the recess between the protrusions (Patent Document 3) Paragraph 0032), the protrusion of the protective film and the insulating substrate is formed into a dissimilar material meter, so that the discharge cannot be eliminated. Then, the inventors of the present invention conducted an in-depth review of the electrostatic chuck device capable of exhibiting a sufficient adsorption power, and an electrostatic chuck having a workpiece adsorption electrode for adsorbing a workpiece, and an electrostatic chuck is disposed on the substrate by a projection. Further, the present invention has been achieved by the above-described problem of adsorbing electrodes on the outer peripheral surface of the projecting portion and the workpiece of the electrostatic chuck. Accordingly, an object of the present invention is to provide an electrostatic chuck device which can discharge a sufficient adsorption force while adhering fine particles to a workpiece, and a method of manufacturing the same. Further, another object of the present invention is to provide a manufacturing method suitable for a suction cup device. [Means for Solving the Problem] That is, the present invention is an electrostatic chuck device that is attached to an electrostatic chuck that has a suction adsorption electrode therein, and is characterized in that: the base plate has a through-electrostatic chuck and protrudes from The electrostatic chucking device, even in the case of polyimine, etc., because of the joint interface force and the elimination of the release, the inner edge of the substrate is interposed between the edge members, thereby solving the possible suppression and simultaneously eliminating the electrostatic base. The 201222716 plurality of protrusions on the surface of the workpiece disk having the workpiece form a relief-like workpiece adsorption surface by the top surface of the protrusion, and between the outer peripheral surface of the protrusion and the workpiece adsorption electrode of the electrostatic chuck Insulating member. Moreover, the present invention is a method of manufacturing an electrostatic chuck device, which is a method of manufacturing an electrostatic chuck device having an electrostatic chuck on a substrate, the electrostatic chuck being attached between two insulating sheet members for adsorption a workpiece adsorption electrode of a workpiece, characterized in that: a substrate having a plurality of protrusions on a surface thereof; and a workpiece adsorption electrode having an opening portion at a position corresponding to the protrusion portion, the opening portion being filled with an insulating bonding agent In the electrostatic chuck, first, a through hole having a size smaller than the opening is formed in the electrostatic chuck so that the opening of the electrostatic chuck can pass through the opening of the workpiece adsorption electrode, and then the protrusion of the k disk is inserted. In the through hole, a static chuck is superposed on the base, and a embossed workpiece suction surface is formed by a top surface of the protrusion protruding from the surface of the electrostatic chuck. The electrostatic chuck device of the present invention is configured such that an electrostatic chuck having a workpiece adsorption electrode therein is provided with an electrostatic chuck on the substrate so that the protrusion of the substrate can pass therethrough, and protrudes from the top of the plurality of protrusions on the side of the electrostatic chuck. The surface will form an embossed workpiece adsorption surface. Regarding the shape of the protrusion, first, the top surface thereof is preferably subjected to planarization treatment by mirror treatment or subsequent honing. Further, the cross-sectional shape of the protruding portion is a circular shape, an elliptical shape, a polygonal shape of a triangular shape or the like, and is not particularly limited. However, it is preferable that the outer peripheral surface of the protruding portion is chamfered, preferably a circular or close shape. In addition, the height of the protrusions indicated by the height from the surface of the electrostatic chuck to the top surface of the protrusion is high, and the foreign matter such as the particles is surely removed, and may adhere to the back surface of the workpiece. From the viewpoint of bismuth, it is preferably 5 μm or more, more preferably 5 μm or more and 20 μm or less. Further, from the viewpoint of the development of the adsorption force, the distance from the surface of the workpiece suction electrode of the electrostatic chuck to the top surface of the protrusion is preferably 50 μm or more and 300 μm or less, more preferably 50 μm or more. ΙΟΟμηι is better. In the present invention, the base plate is not particularly limited, and may be formed of a material having a low dusting property, and may be made of a resin such as polyimide or quartz glass, or A base made of metal such as aluminum or stainless steel. In this case, if the material with the same material as the workpiece or the linear expansion coefficient is used, it is possible to prevent the shape change due to thermal expansion and to generate friction between the workpiece and the workpiece to suppress excessive dust generation. Further, when the base is formed of a low thermal expansion material having a thermal expansion coefficient of 1 ppm or less, it is possible to prevent the above-described friction from occurring and to maintain the dimensional accuracy. Examples of such materials include quartz glass or low thermal expansion glass ceramics. Since the thermal expansion is extremely small compared to ordinary glass, the base made of such a low thermal expansion material can meet the viewpoint of low dust generation and can be used. The accuracy required for EUV exposure. Further, the means for providing the projections on the base plate may be, for example, a method of sandblasting or etching treatment via a mask that matches the arrangement pattern of the projections. It may be a method other than these, but the formation of the protrusion is easy under the base body other than the projection and the projection by the same material.
S -9- 201222716 ，且即使是像玻璃那樣硬且脆的材質時’照樣可將所望的 突起部形成於基盤的表面。 本發明的靜電吸盤是在內部具備工件吸附電極者，以 工件吸附電極不露出於靜電吸盤的表背面或側面的狀態， 在基盤上設置靜電吸盤。並且，在基盤的突起部的外周面 與工件吸附電極之間介有絕緣構件，去除基盤與工件吸附 電極直接接觸的部分。 將如此的靜電吸盤形成於基盤上的手段，例如可舉其 次那樣的2個方法。 第一方法是首先在基盤上對形成於突起部之間的凹陷 塗佈絕緣性材料來形成下部絕緣層，且在其上利用導電性 材料來形成工件吸附電極，更從其上塗佈絕緣性材料來形 成上部絕緣層的方法。在形成工件吸附電極時，是在與突 起部的外周面之間設置預定的間隙，只要形成上部絕緣層 的絕緣性材料的一部分被充塡於此間隙，便可使絕緣性材 料所構成的絕緣構件介於突起部的外周面與吸附電極之間 〇 在此第一方法中’形成上部絕緣層及下部絕緣層的絕 緣性材料’可舉樹脂或陶瓷等，上部絕緣層及下部絕緣層 可由同材料所形成，或使用彼此不同的材料，但至少有關 形成於工件吸附面上的上部絕緣層是考量低發塵性或介電 常數等，由聚醯亞胺、聚對苯二甲酸乙二酯（PET )、液 晶聚合物等的樹脂所構成爲理想。並且，該等的絕緣層的 形成是藉由使用噴墨裝置的印刷或網版印刷等來塗佈絕緣 -10- 201222716 性材料爲佳。另一方面，有關工件吸附電極是用噴墨裝置 來印刷金屬塗料，或以網版印刷等來塗佈導電性材料，或 濺射金屬’或以蒸鍍等來形成由導電性材料所構成的工件 吸附電極。 又’第二方法是在形成2個絕緣薄板構件之間具有工 件吸附電極的靜電吸盤後，予以貼合於基盤而成爲靜電吸 盤裝置的方法。此情況，事先使對應於基盤的突起部，令 工件吸附電極具有開口部，而以能夠通過此開口部來貫通 靜電吸盤的表背面間之方式，在靜電吸盤中形成比開口部 小的大小的貫通孔《然後，只要使基盤的突起部插通於貫 通孔’將靜電吸盤疊合於基盤，藉由突出於靜電吸盤的表 面之突起部的頂面來形成浮雕狀的工件吸附面即可。 在此第二方法中爲了形成靜電吸盤，首先，在由樹脂 或陶瓷等所構成的絕緣薄板構件的一面，藉由金屬的蒸鍍 或濺射、或印刷等來形成具有預定的開口部之吸附電極。 或，對於事先具備銅箔等金屬箔的絕緣薄板構件，藉由使 用遮罩的蝕刻處理來從金屬箔形成具有預定的開口部之吸 附電極。其次，至少開口部以矽或環氧樹脂等的絕緣性接 合劑來充塡，而於工件吸附電極側貼合其他的絕緣薄板構 件。此時，亦可使用一面具有由熱可塑性樹脂等所構成的 接合層的樹脂薄膜作爲絕緣薄板構件，在熱壓著下，使樹 脂薄膜的接合層充塡於開口部。然後，只要將比開口部小 的大小的貫通孔形成於靜電吸盤，便可在插通於貫通孔的 基盤的突起部與工件吸附電極之間介有由絕緣性的接合劑S-9-201222716, and even if it is a hard and brittle material like glass, the desired protrusion can be formed on the surface of the base. In the electrostatic chuck of the present invention, the workpiece suction electrode is provided inside, and the electrostatic chuck is provided on the base plate in a state where the workpiece adsorption electrode is not exposed to the front or back surface of the electrostatic chuck. Further, an insulating member is interposed between the outer peripheral surface of the protruding portion of the base plate and the workpiece adsorption electrode, and the portion where the substrate is in direct contact with the workpiece adsorption electrode is removed. The means for forming such an electrostatic chuck on the substrate can be, for example, two methods. The first method is to first form an insulating material on a recess formed between the protrusions on the base to form a lower insulating layer, and to form a workpiece adsorption electrode thereon by using a conductive material, and to coat the insulation thereon. A method of forming a top insulating layer of material. When the workpiece adsorption electrode is formed, a predetermined gap is provided between the outer peripheral surface of the protrusion portion, and if a part of the insulating material forming the upper insulating layer is filled in the gap, the insulation made of the insulating material can be formed. The member is interposed between the outer peripheral surface of the protrusion and the adsorption electrode. In the first method, the insulating material forming the upper insulating layer and the lower insulating layer may be resin or ceramic, and the upper insulating layer and the lower insulating layer may be the same. The material is formed, or materials different from each other are used, but at least the upper insulating layer formed on the adsorption surface of the workpiece is considered to have low dusting property or dielectric constant, etc., by polyimide and polyethylene terephthalate. A resin such as (PET) or a liquid crystal polymer is preferably formed. Further, it is preferable that the insulating layer is formed by coating the insulating material by printing or screen printing using an ink jet apparatus or the like. On the other hand, the workpiece adsorption electrode is formed by printing a metallic paint by an inkjet device, coating a conductive material by screen printing or the like, or sputtering a metal or forming a conductive material by vapor deposition or the like. The workpiece adsorbs the electrode. Further, the second method is a method in which an electrostatic chuck having a workpiece adsorption electrode between two insulating sheet members is formed and bonded to a substrate to form an electrostatic chuck device. In this case, the projection portion corresponding to the base plate is provided with the opening of the workpiece, and the size of the electrostatic chuck is smaller than that of the opening so as to pass through the opening between the front and back surfaces of the electrostatic chuck. The through hole "then, the protrusion of the base plate is inserted into the through hole" to superimpose the electrostatic chuck on the base, and the embossed workpiece suction surface can be formed by protruding from the top surface of the protrusion on the surface of the electrostatic chuck. In the second method, in order to form an electrostatic chuck, first, on one surface of an insulating sheet member made of resin, ceramics or the like, adsorption having a predetermined opening portion is formed by vapor deposition or sputtering of metal, printing, or the like. electrode. Alternatively, an insulating sheet having a predetermined opening portion is formed from the metal foil by an etching treatment using a mask for an insulating thin plate member having a metal foil such as a copper foil. Next, at least the opening portion is filled with an insulating adhesive such as tantalum or epoxy resin, and another insulating thin plate member is bonded to the workpiece adsorption electrode side. In this case, a resin film having a bonding layer made of a thermoplastic resin or the like may be used as the insulating thin plate member, and the bonding layer of the resin film may be filled in the opening under heat pressing. Then, by forming a through hole having a size smaller than the opening portion in the electrostatic chuck, an insulating bonding agent can be interposed between the protruding portion of the substrate inserted through the through hole and the workpiece adsorption electrode.
S -11 - 201222716 所構成的絕緣構件。 相當於工件吸附面側的上部絕緣層的絕緣薄板構件與 相當於基盤側的下部絕緣層的絕緣薄板構件可由同材料所 形成，或使用彼此不同的材料，但至少相當於上部絕緣層 的絕緣薄板構件是考量低發塵性或介電常數等，由聚醯亞 胺薄膜、PET薄膜、液晶聚合物薄膜等的樹脂薄膜所構成 爲佳，更理想是相當於上部絕緣層的絕緣薄板構件及相當 於上部絕緣層的絕緣薄板構件皆由該等的樹脂薄膜所構成 爲佳。 又’疊合於基盤上的靜電吸盤亦可使用接合劑或被塗 佈接合劑的接合薄板等來黏著於基盤上，但較理想是因靜 電吸盤與基盤的熱膨脹率的不同而在該等的界面所產生的 應力被解放，而來接合靜電吸盤與基盤爲佳。特別是基盤 爲由石英玻璃等那樣的低熱膨脹材所構成時有效。具體的 手段是例如經由顯現凡得瓦力（分子間力）的樹脂薄膜來 接合靜電吸盤與基盤的方法。此接合薄膜可想像在表面形 成具有亞微米級的高縱橫比的纖維構造之類的微細突起， 藉由非常弱的分子間力來顯現黏著力。作爲形成如此的接 合薄膜的材料，例如可舉矽樹脂、聚醯胺、苯乙烯丁二烯 橡膠、氯磺化聚乙烯橡膠、丙烯腈-丁二烯橡膠、乙丙橡 膠、氯丁二烯橡膠、聚丁橡膠' 氟橡膠、丁基橡膠、聚氨 酯橡膠等。 又’其他的例子是靜電吸盤在內部具有用以吸附基盤 的基盤吸附電極的方法。亦即，在2個的絕緣薄板構件之 -12- 201222716 間具有用以吸附工件的工件吸附電極及用以吸附基盤的基 盤吸附電極，使中間絕緣薄板構件介於工件吸附電極與基 盤吸附電極之間的靜電吸盤。此時，在工件吸附電極及基 盤吸附電極，分別在對應於基盤的突起部之位置具有開口 部，先以絕緣性的接合劑來充塡該等的開口部，只要在靜 電吸盤中形成比開口部小的大小的貫通孔，便可在基盤的 突起部與工件吸附電極之間、及基盤的突起部與基盤吸附 電極之間，分別介有由絕緣性的接合劑所構成的絕緣構件 0 第一方法及第二方法皆是工件吸附面側的上部絕緣層 的厚度爲25μιη以上200μιη以下爲佳，較理想是50μηι以上 1 00 μιη以下爲佳。至少工件吸附面側的上部絕緣層的厚度 爲25μιη，則可確保工件吸附電極的電性絕緣，若爲50μπι 以上，則可使其可靠度更爲充分。另一方面，若上部絕緣 層的厚度爲200 μιη以下，則對工件之吸附力的顯現的點不 會有問題，若爲ΙΟΟμιη以下，則可用更充分的力來吸附工 件的點有利。又，使介於突起部的外周面與工件吸附電極 之間的絕緣構件的厚度（突起部外周面與工件吸附電極的 距離）爲了更確實地確保絕緣性，〇.5mm以上爲佳，較理 想是0.7mm以上1.5 mm以下爲佳。只要增加絕緣構件的厚 度便可容易確保絕緣性，但若絕緣構件的厚度超過2mm , 則不僅效果飽和，且對工件而言工件吸附電極的面積會減 少，所以不理想。 又，有關工件吸附電極可採用在與半導體晶圓或玻璃Insulation member composed of S -11 - 201222716. The insulating sheet member corresponding to the upper insulating layer on the suction side of the workpiece and the insulating sheet member corresponding to the lower insulating layer on the side of the substrate may be formed of the same material, or materials different from each other, but at least equivalent to the insulating sheet of the upper insulating layer The member is preferably composed of a resin film such as a polyimide film, a PET film or a liquid crystal polymer film, and is preferably an insulating thin plate member corresponding to an upper insulating layer, and is equivalent to a low dusting property or a dielectric constant. It is preferable that the insulating sheet member of the upper insulating layer is composed of the resin films. Further, the electrostatic chuck stacked on the substrate may be adhered to the substrate by using a bonding agent or a bonding sheet coated with a bonding agent, etc., but it is preferable that the electrostatic chuck and the substrate have different thermal expansion rates. The stress generated by the interface is liberated, and it is better to join the electrostatic chuck to the base plate. In particular, it is effective when the base is made of a low thermal expansion material such as quartz glass. A specific means is a method of joining an electrostatic chuck and a substrate, for example, via a resin film which exhibits van der Waals force (intermolecular force). This bonding film is conceivable to form fine protrusions such as a fiber structure having a high aspect ratio of a submicron order on the surface, and the adhesion is revealed by a very weak intermolecular force. Examples of the material for forming such a bonding film include enamel resin, polyamide, styrene butadiene rubber, chlorosulfonated polyethylene rubber, acrylonitrile-butadiene rubber, ethylene propylene rubber, and chloroprene rubber. , polybutadiene rubber 'fluoro rubber, butyl rubber, polyurethane rubber, etc. Further, another example is a method in which an electrostatic chuck has a substrate adsorption electrode for adsorbing a substrate inside. That is, between the -12-201222716 of the two insulating sheet members, there are a workpiece adsorption electrode for adsorbing the workpiece and a substrate adsorption electrode for adsorbing the substrate, so that the intermediate insulating thin plate member is interposed between the workpiece adsorption electrode and the substrate adsorption electrode. Static suction cup between. At this time, the workpiece adsorption electrode and the substrate adsorption electrode each have an opening at a position corresponding to the protrusion of the substrate, and the openings are filled with an insulating bonding agent as long as the opening is formed in the electrostatic chuck. The small-sized through-holes can be provided with an insulating member composed of an insulating bonding agent between the protrusion of the substrate and the workpiece adsorption electrode, and between the protrusion of the substrate and the substrate adsorption electrode. In both the method and the second method, the thickness of the upper insulating layer on the side of the adsorption surface of the workpiece is preferably 25 μm or more and 200 μm or less, and more preferably 50 μm or more and 100 μm or less. At least the thickness of the upper insulating layer on the suction side of the workpiece is 25 μm, and the electrical insulation of the workpiece adsorption electrode can be ensured. If it is 50 μm or more, the reliability can be made more sufficient. On the other hand, when the thickness of the upper insulating layer is 200 μm or less, there is no problem in that the adsorption force of the workpiece appears. If it is ΙΟΟμηη or less, it is advantageous to use a sufficient force to adsorb the workpiece. Further, the thickness of the insulating member (the distance between the outer peripheral surface of the protruding portion and the workpiece adsorption electrode) between the outer peripheral surface of the protruding portion and the workpiece adsorption electrode is preferably 5 mm or more in order to secure insulation. It is preferably 0.7 mm or more and 1.5 mm or less. As long as the thickness of the insulating member is increased, the insulating property can be easily ensured. However, if the thickness of the insulating member exceeds 2 mm, not only the effect is saturated, but also the area of the workpiece adsorbing electrode is reduced for the workpiece, which is not preferable. Also, the workpiece adsorption electrode can be used in conjunction with semiconductor wafers or glass.
S •13- 201222716 基板等的工件之間施加電壓之所謂的單極型者，或採用在 電極間設置電位差之所謂的雙極型者。在雙極型的工件吸 附電極時，可同一平面狀地排列電極，或經由電極間絕緣 層來上下排列電極。單極型或雙極型的選擇可按照裝置所 被使用的條件等來適當決定。又，工件吸附電極的形狀是 例如平板狀、半圓狀、梳齒狀或網狀之類的圖案形狀等， 可按照工件的種類等來適當決定。又，工件吸附電極的厚 度雖無特別加以限制，但若考慮設計等，則實用上是 Ο.ίμηι以上30μηι以下程度。 〔發明的效果〕 若根據本發明的靜電吸盤裝置，則可一邊儘可能地抑 制微粒附著至工件，一邊使充分的吸附力顯現的同時，防 止放電。特別是將熱膨脹小的石英玻璃或低熱膨脹玻璃陶 瓷等使用於基盤時，亦可顯現良好的吸附力，因此適合使 用在EUV曝光機等。 又’如上述第二方法所說明那樣，本發明的靜電吸盤 裝置的製造方法是預先形成靜電吸盤，所以可確認絕緣性 等的性能之後貼合於基盤。因此，即使萬一有設計上的問 題等’還是可事先掌握，可取得可靠度佳的靜電吸盤裝置 【實施方式】 以下’ 一邊根據附圖，一邊更具體說明本發明。 -14- 201222716 〔實施例〕 〔第一實施形態〕 圖1是表示本發明的靜電吸盤裝置的立體說明圖，圖1 (a)是表示將靜電吸盤2貼合於基盤1的樣子，圖1 (b) 是表示貼合後的狀態。又，圖2是表示圖1的A-A剖面的一 部分剖面說明圖。其中，基盤1是在直徑3 OOmmx厚度 10mm的石英玻璃製的基盤本體la的表面形成多數個高度 1 7Ομιη、頂面的直徑1mm的石英玻璃製的突起部lb者，在 圖2所示的剖面圖中，突起部lb是以中心間距離10mm來彼 此鄰接配置。此基盤1是藉由硏削加工來製作形狀，藉由 蝕刻來除去表面損傷，而形成突起部lb者，突起部lb的頂 面是藉由鏡面加工來平坦化處理成平面度爲0.2 μηι。並且 ，在基盤本體la形成有流動冷卻氣體等的冷媒路徑（圖示 外）。 . 並且，配設於基盤上的靜電吸盤2是在內部具備由銅 箔所形成的工件吸附電極3，以從靜電吸盤2的表面到突起 部la的頂面爲止的高度來表示的突起部的突出高1^是10 μιη ，從工件吸附電極3的表面到突起部la的頂面爲止的高度 h2是60 μιη。而且，由矽製的接合劑所構成的絕緣構件6會 介於基盤1的突起部lb的外周面與工件吸附電極3之間。 此實施例的靜電吸盤2是如其次那樣製作。首先，如 圖3 ( a)所示，使用在由厚度50μπι的聚醯亞胺薄膜所構成 的絕緣薄板構件4的一面側具備厚度ΙΟμιη的銅箔3者。經由S •13- 201222716 A so-called unipolar type in which a voltage is applied between workpieces such as a substrate, or a so-called bipolar type in which a potential difference is provided between electrodes. When the bipolar type workpiece is attached to the electrodes, the electrodes may be arranged in the same plane or the electrodes may be arranged up and down via the inter-electrode insulating layer. The selection of the unipolar or bipolar type can be appropriately determined depending on the conditions under which the device is used and the like. Further, the shape of the workpiece adsorption electrode is, for example, a flat plate shape, a semicircular shape, a comb shape or a mesh shape, and the like, and can be appropriately determined depending on the type of the workpiece or the like. Further, the thickness of the workpiece adsorption electrode is not particularly limited, but in consideration of design, etc., it is practically Ο.ίμηι or more and 30 μηι or less. [Effects of the Invention] According to the electrostatic chuck device of the present invention, it is possible to prevent the particles from adhering to the workpiece as much as possible while preventing sufficient discharge force from appearing and preventing discharge. In particular, when quartz glass having a small thermal expansion or low thermal expansion glass ceramics or the like is used for a base plate, a good adsorption force can be exhibited, and therefore it is suitably used in an EUV exposure machine or the like. In the method of manufacturing the electrostatic chuck device of the present invention, as described in the second method, the electrostatic chuck is formed in advance, so that the performance such as insulation can be confirmed and then bonded to the substrate. Therefore, even if there is a design problem or the like, it is possible to obtain an electrostatic chuck device with good reliability. [Embodiment] Hereinafter, the present invention will be described more specifically with reference to the accompanying drawings. [Embodiment] [First Embodiment] Fig. 1 is a perspective explanatory view showing an electrostatic chuck device according to the present invention, and Fig. 1(a) is a view showing a state in which an electrostatic chuck 2 is bonded to a base 1, and Fig. 1 (b) indicates the state after bonding. Fig. 2 is a partial cross-sectional explanatory view showing a cross section taken along line A-A of Fig. 1. The base plate 1 is a projection lb of quartz glass having a diameter of 1 mm and a diameter of 1 mm on the surface of a base body la made of quartz glass having a diameter of 300 mm and a thickness of 10 mm, as shown in Fig. 2 In the figure, the projections 1b are disposed adjacent to each other with a distance of 10 mm between the centers. The base 1 is formed into a shape by boring, and the surface damage is removed by etching to form the projection lb. The top surface of the projection lb is planarized by mirror processing to have a flatness of 0.2 μm. Further, a refrigerant path (not shown) through which a cooling gas or the like flows is formed in the base body la. Further, the electrostatic chuck 2 disposed on the substrate is provided with a protrusion of the workpiece adsorption electrode 3 formed of a copper foil and having a height from the surface of the electrostatic chuck 2 to the top surface of the protrusion 1a. The protrusion height 1^ is 10 μm, and the height h2 from the surface of the workpiece adsorption electrode 3 to the top surface of the protrusion 1a is 60 μm. Further, the insulating member 6 composed of the tantalum bonding agent is interposed between the outer peripheral surface of the protruding portion 1b of the base 1 and the workpiece suction electrode 3. The electrostatic chuck 2 of this embodiment was fabricated as it is next. First, as shown in Fig. 3 (a), a copper foil 3 having a thickness of ΙΟμη is provided on one surface side of the insulating sheet member 4 made of a polyimide film having a thickness of 50 μm. via
S -15- 201222716 遮罩來對此銅箔3進行蝕刻處理，如圖3 ( b )所示，使對 應於基盤1的突起部lb的位置及形狀，形成具有開口徑 Kmm的開口部3c之工件吸附電極3。如圖4所示，此工件 吸附電極3是構成具有半圓狀的第一吸附電極3 a及第二吸 附電極3b的雙極型的工件吸附電極，被連接至圖示外的直 流電源。 其次，如圖3(c)所示，在工件吸附電極3的開口部 3c充塡砂製的接合劑6，重疊由厚度75μπι的聚醯亞胺薄膜 所構成的絕緣薄板構件5而壓縮加工，多餘的接合劑6會在 絕緣薄板構件4與絕緣薄板構件5之間形成接合層，取得層 疊體。其次，以能夠形成與吸附電極3的開口部3c同心圓 ，防止毛邊的形成抑止微粒的發生之方式，藉由雷射加工 來使層疊體的表背面間貫通，如圖3 ( d )所示，形成開口 徑d2=l.lmm的貫通孔7 ’而取得靜電吸盤2。 然後，使基盤1的突起部lb插通於上述所取得的靜電 吸盤2的貫通孔7，將兩者疊合，利用矽製的接合劑（圖示 外）來將靜電吸盤2貼合於基盤本體la，藉此使本實施例 的靜電吸盤裝置完成。所取得的靜電吸盤裝置是基盤1的 突起部lb會形成使半導體晶圓或玻璃基板等的工件吸附的 工件吸附面，且在工件吸附電極3的開口部3a剩下的矽製 接合劑6會在突起部lb的外周面與工件吸附電極3之間形成 絕緣構件6。 如此取得的靜電吸盤裝置可一邊排除放電之虞，一邊 顯現高的吸附力，且包含突起部，基盤是由石英玻璃所構 -16- S. 201222716 成，所·以熱膨脹所造成的形狀變化極少。因此，在半導體 晶圓或玻璃基板等的工件與吸附面之間的摩擦不易產生， 且因具備浮雕狀的工件吸附面’所以能夠儘可能地抑制微 粒附著至工件。更因爲基盤的形狀變化極少，所以可達成 在EUV曝光機所被要求的水準的高精度。 並且，在將靜電吸盤2貼合於基盤本體la時，亦可取 代矽製的接合劑，而使用厚度5〇μηι的矽樹脂薄膜（扶桑橡 膠產業社製：商品名Silius )。此樹脂薄膜是在表面形成 有微細的突起，顯現非常弱的分子間力所產生的黏著力， 因此可使靜電吸盤2接合於基盤本體la，且即使在EUV曝 光機等使用靜電吸盤裝置而暴露於高溫，也僅靜電吸盤2 會膨脹，基盤1不會變形。而且，此樹脂薄膜可重複的接 合，可容易分離靜電吸盤2與基盤1，因此在維修的點亦有 利。 〔第二實施形態〕 .圖5是表示第一實施形態的靜電吸盤裝置的變形例， 靜電吸盤2除了吸附工件的工件吸附電極3外，在內部具備 用以吸附基盤1的基盤吸附電極8»在取得此靜電吸盤2時 ，使用一在由厚度50μιη的聚醯亞胺薄膜所構成的絕緣薄板 構件4的一面側具備厚度ΙΟμπι的銅箔3者，至形成工件吸附 電極3爲止是與第一實施形態同樣。本實施例是更準備一 在由厚度5〇μιη的聚醯亞胺薄膜所構成的絕緣薄板構件5的 一面側具備厚度1〇μΐΏ的銅箔8者，經由遮罩來對此銅箔8進S -15-201222716 The copper foil 3 is etched by the mask, and as shown in Fig. 3 (b), the opening portion 3c having the opening diameter Kmm is formed in accordance with the position and shape of the projection lb corresponding to the base 1. The workpiece adsorbs the electrode 3. As shown in Fig. 4, the workpiece adsorption electrode 3 is a bipolar type workpiece adsorption electrode constituting a semicircular first adsorption electrode 3a and a second adsorption electrode 3b, and is connected to a DC power supply other than the one shown. Next, as shown in FIG. 3(c), the bonding agent 6 made of sand is filled in the opening 3c of the workpiece adsorption electrode 3, and the insulating thin plate member 5 made of a polyimide film having a thickness of 75 μm is superposed and compressed. The excess bonding agent 6 forms a bonding layer between the insulating thin plate member 4 and the insulating thin plate member 5 to obtain a laminated body. Next, the front and back sides of the laminated body can be penetrated by laser processing so as to form a concentric circle with the opening 3c of the adsorption electrode 3, and the formation of the burrs can be prevented from being formed by laser processing, as shown in Fig. 3(d). The through hole 7' having an opening diameter d2 = 1.1 mm was formed to obtain the electrostatic chuck 2. Then, the protrusion lb of the base 1 is inserted into the through hole 7 of the obtained electrostatic chuck 2, and the two are superimposed, and the electrostatic chuck 2 is attached to the base by a bonding agent (not shown). The body la, whereby the electrostatic chuck device of the present embodiment is completed. In the obtained electrostatic chuck device, the projection portion 1b of the base 1 forms a workpiece suction surface for sucking a workpiece such as a semiconductor wafer or a glass substrate, and the tantalum bonding agent 6 remaining in the opening portion 3a of the workpiece adsorption electrode 3 is formed. An insulating member 6 is formed between the outer circumferential surface of the protrusion lb and the workpiece adsorption electrode 3. The electrostatic chuck device thus obtained can exhibit a high adsorption force while eliminating the discharge, and includes a projection, and the base plate is made of quartz glass, 16-S. 201222716, and the shape change caused by thermal expansion is extremely small. . Therefore, friction between the workpiece such as the semiconductor wafer or the glass substrate and the adsorption surface is less likely to occur, and the embossed workpiece adsorption surface is provided, so that adhesion of the fine particles to the workpiece can be suppressed as much as possible. Further, since the shape of the base plate is extremely changed, the accuracy required for the EUV exposure machine can be achieved. In addition, when the electrostatic chuck 2 is bonded to the base body la, the enamel resin film (manufactured by Fuso Rubber Industry Co., Ltd.: trade name Silius) having a thickness of 5 〇 μηι can be used instead. This resin film has fine protrusions formed on the surface and exhibits an adhesive force generated by a very weak intermolecular force, so that the electrostatic chuck 2 can be bonded to the substrate body 1a and exposed even by an electrostatic chuck device such as an EUV exposure machine. At high temperatures, only the electrostatic chuck 2 will expand and the substrate 1 will not deform. Moreover, the resin film can be repeatedly joined, and the electrostatic chuck 2 and the substrate 1 can be easily separated, so that it is also advantageous at the point of maintenance. [Second Embodiment] Fig. 5 is a view showing a modification of the electrostatic chuck device according to the first embodiment. The electrostatic chuck 2 is provided with a substrate adsorption electrode 8 for adsorbing the substrate 1 in addition to the workpiece adsorption electrode 3 of the workpiece. When the electrostatic chuck 2 is obtained, a copper foil 3 having a thickness of ΙΟμπι on one surface side of the insulating thin plate member 4 made of a polyimide film having a thickness of 50 μm is used, and the first step is to form the workpiece adsorption electrode 3 The embodiment is the same. In the present embodiment, a copper foil 8 having a thickness of 1 μm is provided on one surface side of the insulating sheet member 5 made of a polyimide film having a thickness of 5 μm, and the copper foil 8 is introduced through the mask.
S -17- 201222716 行蝕刻處理，與工件吸附電極3的情況同樣，使對應於基 盤1的突起部lb的位置及形狀，形成開口徑（^=2111111的開口 部的同時，形成梳齒狀的電極部8 a及8b彼此不同地被裝入 的雙極型的基盤吸附電極8。此時，電極部8a及8b的寬度 是分別爲0.7mm，且電極部8a及8b的電極間距離是形成 0.7mm。另外，此基盤吸附電極8是可與工件吸附電極3不 同連接至別的直流電源（圖示外）。 其次，分別對工件吸附電極3及基盤吸附電極8塗佈矽 製的接合劑6，在各開口部及電極間的間隙充塡接合劑6， 使由厚度125μηι的聚醯亞胺薄膜所構成的中間絕緣薄板構 件9介在，將絕緣薄板構件4與絕緣薄板構件5重疊而壓縮 加工。其次，與第一實施形態的情況同樣，形成開口徑 d2=l.lmm的貫通孔7，取得靜電吸盤2。 然後，除了調整突起部lb的高度以外，與第一實施形 態同樣，對於基盤1，使突起部lb插通於靜電吸盤2的貫通 孔7而疊合，取得一突起部的突出高111 = 1(^111，從工件吸附 電極3到突起部la的頂面爲止高度h2 = 60 μιη的靜電吸盤裝置 。此靜電吸盤裝置是藉由對基盤吸附電極8施加電壓，在 基盤上保持靜電吸盤2，另一方面，藉由對工件吸附電極3 施加電壓，可吸附半導體晶圓或玻璃基板等的工件。因此 ，即使靜電吸盤裝置暴露於高溫下，也僅靜電吸盤2膨脹 ，基盤1不會變形，靜電吸盤2與基盤1的分離容易，因此 在維修的點亦有利。In the same manner as in the case of the workpiece adsorption electrode 3, the position and shape of the projection lb corresponding to the base 1 are formed in the same manner as in the case of the workpiece absorbing electrode 3, and the opening is formed (^=2111111) and the comb-tooth shape is formed. The bipolar base disc adsorption electrode 8 in which the electrode portions 8a and 8b are different from each other. At this time, the widths of the electrode portions 8a and 8b are respectively 0.7 mm, and the distance between the electrodes of the electrode portions 8a and 8b is formed. In addition, the base adsorption electrode 8 can be connected to another DC power source (not shown) separately from the workpiece adsorption electrode 3. Next, the workpiece adsorption electrode 3 and the substrate adsorption electrode 8 are respectively coated with a bonding agent. 6. The gap between the openings and the electrodes is filled with the bonding agent 6, and the intermediate insulating thin plate member 9 made of a polyimide film having a thickness of 125 μm is interposed, and the insulating thin plate member 4 and the insulating thin plate member 5 are superposed and compressed. In the same manner as in the first embodiment, the through hole 7 having the opening diameter d2 = 1.1 mm is formed, and the electrostatic chuck 2 is obtained. Then, similarly to the first embodiment, the same as in the first embodiment, The base plate 1 is inserted into the through hole 7 of the electrostatic chuck 2 to overlap, and the protrusion height of one protrusion is 111 = 1 (^111, the height h2 from the workpiece adsorption electrode 3 to the top surface of the protrusion la) An electrostatic chuck device of 60 μm. The electrostatic chuck device holds the electrostatic chuck 2 on the substrate by applying a voltage to the substrate adsorption electrode 8, and on the other hand, the semiconductor wafer can be adsorbed by applying a voltage to the workpiece adsorption electrode 3. Or a workpiece such as a glass substrate. Therefore, even if the electrostatic chuck device is exposed to a high temperature, only the electrostatic chuck 2 is expanded, the substrate 1 is not deformed, and the separation of the electrostatic chuck 2 from the substrate 1 is easy, so that it is advantageous at the point of maintenance.
-18- 201222716 【圖式簡單說明】 圖1是表示本發明的靜電吸盤裝置的立體說明圖。 圖2是圖1的靜電吸盤裝置的剖面說明圖。 圖3是表示形成靜電吸盤的程序的模式圖。 圖4是表示靜電吸盤的吸附電極的樣子的平面模式圖 〇 圖5是表示本發明的靜電吸盤裝置的變形例的剖面說 明圖。 【主要元件符號說明】 1 :基盤 h :基盤本體 U :突起部 2 :靜電吸盤 3 :吸附電極 3a:第—吸附電極 3b :第二吸附電極 3c :開口部 4 :絕緣薄板構件 5 :絕緣薄板構件 6 :接合劑（絕緣構件） 7 :貫通孔 8 :基盤吸附電極 8a:第一吸附電極 201222716 8b ： 第二吸附電極 -20-18-201222716 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective explanatory view showing an electrostatic chuck device of the present invention. Fig. 2 is a cross-sectional explanatory view of the electrostatic chuck device of Fig. 1; Fig. 3 is a schematic view showing a procedure for forming an electrostatic chuck. Fig. 4 is a plan view showing a state of the adsorption electrode of the electrostatic chuck. Fig. 5 is a cross-sectional view showing a modification of the electrostatic chuck device of the present invention. [Description of main component symbols] 1 : Base plate h: Base body U: Projection 2: Electrostatic chuck 3: Adsorption electrode 3a: First-adsorption electrode 3b: Second adsorption electrode 3c: Opening portion 4: Insulating thin plate member 5: Insulating thin plate Member 6: bonding agent (insulating member) 7: through hole 8: substrate adsorption electrode 8a: first adsorption electrode 201222716 8b: second adsorption electrode-20