KR20150065606A - Manufacturing method of electronic device - Google Patents

Abstract

The present invention relates to a method for manufacturing an electronic device. The method includes: a glass laminate manufacturing process for obtaining a glass laminate having a support substrate which is a glass plate, an inorganic layer mount support substrate having an inorganic layer arranged on the support substrate, and a glass substrate which is separably laminated on the inorganic layer; a member forming process for obtaining a member mount laminate for an electronic device by forming a member for an electronic device on the surface of the glass substrate of the glass laminate; an irradiation process for forming a portion to be removed of the inorganic layer after removing the whole or a portion of a peripheral side of the inorganic layer of the member mount laminate for an electronic device by irradiating the whole or the portion of the peripheral side with laser beam; and a separation process for obtaining the electronic device having the glass substrate and the member for an electronic device by separating the inorganic layer mount support substrate from the member mount laminate for an electronic device starting from the removal portion as a starting point.

Description

TECHNICAL FIELD [0001] The present invention relates to a manufacturing method of an electronic device,

The present invention relates to a method of manufacturing an electronic device.

Recently, electronic devices (electronic devices) such as a solar cell (PV), a liquid crystal panel (LCD), and an organic EL panel (OLED) have been made thinner and lighter in weight, . On the other hand, if the strength of the glass substrate is insufficient due to the thinning, the handling property of the glass substrate is lowered in the manufacturing process of the electronic device.

Therefore, recently, from the viewpoint of improving the handling property of the glass substrate, a laminate in which a glass substrate is laminated on an inorganic thin film of an inorganic thin film mounting supporting glass is prepared, and a device (member for an electronic device) And then separating the glass substrate from the laminate has been proposed (Patent Document 1).

Japanese Patent Application Laid-Open No. 2011-184284 Japanese Patent Application Laid-Open No. 2003-174153

Patent Document 2 discloses a technique for irradiating a laser beam such as a YAG laser from the side of "substrate having transparency" in order to "promote separation" from the side (from [0112] to 4).

Based on the technique described in Patent Document 2, the present inventors irradiated laser light entirely onto an inorganic thin film from the support glass side. As a result, although the improvement of the peelability was seen, it became clear that the electronic device member on the glass substrate might be damaged. This is presumably because the laser light was transmitted through the inorganic thin film and the glass substrate and irradiated to the electronic device member.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing an electronic device in which detachability between a glass substrate and an inorganic layer is improved while suppressing damage to an electronic device member by laser light irradiation .

As a result of intensive studies to achieve the above object, the present inventors have found that by removing only the periphery of the inorganic layer corresponding to the non-formation region of the electronic device member by irradiation of laser light, It is possible to improve the peeling property between the glass substrate and the inorganic layer while avoiding the laser light irradiation to the member for the device, thereby completing the present invention.

That is, the present invention provides the following (1) to (6).

(1) A glass laminate manufacturing process for obtaining a glass laminate having an inorganic layer mounting support substrate having a support substrate which is a glass plate and an inorganic layer disposed on the support substrate, and a glass substrate which is peelably laminated on the inorganic layer A member forming step of forming an electronic device member on the surface of the glass substrate in the glass laminate to obtain a member mounting laminate for an electronic device; A step of removing the inorganic layer mounting supporting substrate from the electronic device member mounting laminate by removing a part or the whole of the inorganic layer by irradiation with a laser beam to form a removing region of the inorganic layer; And a separation step of obtaining an electronic device having the glass substrate and the member for an electronic device Method for manufacturing a device.

(2) In the above (1), the electronic device member is formed on a part of the surface of the glass substrate, and the laser light is a part or the whole of the periphery of the inorganic layer, And a part or all of the inorganic layer region corresponding to the non-formation region in which the member for the device is not formed is irradiated.

(3) The method of manufacturing an electronic device according to (1) or (2) above, wherein the irradiation step is a step of irradiating the laser beam onto the inorganic layer from the side of the support substrate or the side of the glass substrate.

(4) The method for manufacturing an electronic device according to any one of (1) to (3) above, wherein the removed portion is a portion including an angle or sides of the inorganic layer.

(5) The method of manufacturing an electronic device according to any one of (1) to (4) above, wherein the light source of the laser light is a YAG laser.

(6) The method for manufacturing an electronic device according to any one of (1) to (5), wherein the beam shape of the laser beam is a top hat type.

According to the present invention, it is possible to provide an electronic device manufacturing method in which the detachment of the glass substrate and the inorganic layer is improved while suppressing the damage to the electronic device member by laser light irradiation.

1 is a schematic cross-sectional view of one embodiment of a glass laminate.
2 is a schematic sectional view showing a member forming process;
3 (A) and 3 (B) are schematic sectional views showing irradiation steps.
4 is a schematic cross-sectional view showing a separation process.

Best Mode for Carrying Out the Invention Hereinafter, a preferred embodiment of a method for manufacturing an electronic device of the present invention will be described with reference to the drawings after describing a glass laminate and its manufacturing method (glass laminate manufacturing process).

However, the present invention is not limited to the following embodiments, and various modifications and substitutions can be made to the following embodiments without departing from the scope of the present invention.

The glass laminate is roughly composed of an inorganic layer interposed between the support substrate and the glass substrate, whereby the release property between the inorganic layer and the glass substrate is excellent even after treatment under high temperature conditions.

≪ Glass laminate &

1 is a schematic cross-sectional view of one embodiment of a glass laminate.

1, the glass laminate 10 has an inorganic layer mounting supporting substrate 16 and a glass substrate 18 that include a supporting substrate 12 and an inorganic layer 14. [ The inorganic layer surface 14a of the inorganic layer 14 of the inorganic layer mounting supporting substrate 16 (surface opposite to the side of the supporting substrate 12) and the surface of the inorganic layer 14 of the glass substrate 18 The inorganic-layer-mounting supporting substrate 16 and the glass substrate 18 are laminated so that the first main surface 18a is a lamination surface. That is, one side of the inorganic layer 14 is fixed to the supporting substrate 12, and the other side of the inorganic layer 14 is in contact with the first main surface 18a of the glass substrate 18, (18) are in close contact with each other in a detachable manner. In other words, the inorganic layer 14 has a peelability with respect to the first main surface 18a of the glass substrate 18.

This glass laminate 10 is used until the member forming process described later. That is, the glass laminate 10 is used until a member for an electronic device such as a liquid crystal display device is formed on the surface of the second main surface 18b of the glass substrate 18. Thereafter, the inorganic layer mounting supporting substrate 16 is peeled from the interface with the glass substrate 18, so that the inorganic layer mounting supporting substrate 16 is not a member constituting the electronic device. The separated inorganic layer-mounted supporting substrate 16 can be laminated with a new glass substrate 18, and can be reused as a new glass laminate 10.

In the present invention, the fixation (peelable) adhesion has a difference in peel strength (i.e., the stress required for peeling), and the fixation means that the peel strength is larger than the adhesion. Specifically, the peel strength at the interface between the inorganic layer 14 and the support substrate 12 becomes greater than the peel strength at the interface between the inorganic layer 14 and the glass substrate 18 in the glass laminate 10.

The term "peelably adhered" means peelable and peelable without causing peeling of the fixed surface. That is, when the operation for separating the glass substrate 18 and the support substrate 12 is performed in the glass laminate 10, the contact surface (the interface between the inorganic layer 14 and the glass substrate 18) And does not peel off from the fixed surface. Therefore, when the glass laminate 10 is separated into the glass substrate 18 and the support substrate 12, the glass laminate 10 is separated from the glass substrate 18 and the inorganic layer- .

Hereinafter, the inorganic layer mounting support substrate 16 and the glass substrate 18 constituting the glass laminate 10 will be described in detail and then the manufacturing procedure of the glass laminate 10 Process will be described in detail.

[Inorganic layer mounting supporting substrate]

The inorganic layer mounting supporting substrate 16 includes a supporting substrate 12 and an inorganic layer 14 disposed (fixed) on the surface thereof. The inorganic layer 14 is disposed on the outermost side of the inorganic layer mounting supporting substrate 16 so as to be in close contact with the glass substrate 18 to be described later.

Hereinafter, the shapes of the support substrate 12 and the inorganic layer 14 will be described in detail.

(Supporting substrate)

The supporting substrate 12 has a first main surface and a second main surface and is reinforced by supporting the glass substrate 18 in cooperation with the inorganic layer 14 disposed on the first main surface, A process of manufacturing a member for use in electronic devices, which prevents deformation, scratches, breakage, and the like of the glass substrate 18 at the time of manufacturing the electronic device member.

In the present invention, the supporting substrate 12 is a glass plate. The supporting substrate 12 is preferably formed of a material having a small difference in coefficient of linear expansion from the glass substrate 18 when the member forming step involves heat treatment and is preferably a glass plate containing a glass material such as a glass substrate 18 Is more preferable.

The thickness of the support substrate 12 may be thicker or thinner than that of the glass substrate 18 described later. The thickness of the support substrate 12 is preferably selected based on the thickness of the glass substrate 18, the thickness of the inorganic layer 14, and the thickness of the glass laminate 10 described below. For example, if the current member forming process is designed to process a substrate having a thickness of 0.5 mm and the sum of the thickness of the glass substrate 18 and the thickness of the inorganic layer 14 is 0.1 mm, The thickness is 0.4 mm. The thickness of the support substrate 12 is usually 0.2 to 5.0 mm.

The thickness of the glass plate as the supporting substrate 12 is preferably 0.08 mm or more for ease of handling and difficulty in breaking. Further, the thickness of the glass plate is preferably not more than 1.0 mm, because it is desirable that the rigidity of the glass plate is not broken but appropriately bent when it is peeled off after formation of the electronic device member.

(Inorganic layer)

The inorganic layer 14 is a layer that is placed (fixed) on the first main surface of the support substrate 12 and contacts the first main surface 18a of the glass substrate 18. [ By forming the inorganic layer 14 on the support substrate 12, adhesion of the glass substrate 18 can be suppressed and peeled off even after prolonged processing under high temperature conditions.

The composition of the inorganic layer 14 is not particularly limited and may include, for example, an oxide such as indium tin oxide (ITO), at least one selected from the group consisting of a metal silicide, a nitride, a carbide and a carbonitride have.

Among them, the glass substrate 18 preferably includes at least one member selected from the group consisting of tungsten silicide, aluminum nitride, titanium nitride, silicon nitride, and silicon carbide, from the standpoint that the releasability of the glass substrate 18 to the inorganic layer 14 is more excellent. .

It is more preferable to include silicon nitride (hereinafter also referred to as "SiN") and / or silicon carbide (hereinafter also referred to as "SiC"). The reason why the above-mentioned components are preferable is presumed to be due to the magnitude of electronegativity difference between Si, N, or C contained in the metal silicide, nitride, carbide, and carbonitride and an element combined with these elements. If the difference in electronegativity is small, the polarization is small and it is difficult to generate a hydroxyl group in the reaction with water, so that the releasability of the glass substrate to the inorganic layer 14 is better. More specifically, in SiN, the difference in electronegativity between Si element and N element is 1.14, the difference in electronegativity between Al element and N element in AlN is 1.43, in TiN, Ti element and N element And the difference in electronegativity between the two is 1.50. SiN has the smallest difference in electronegativity and is superior in the peeling property of the glass substrate 18 to the inorganic layer 14.

The inorganic layer 14 may contain two or more of the above components.

The composition of the inorganic layer 14 can be measured by X-ray photoelectron spectroscopy (XPS).

Although the composition of the metal silicide is not particularly limited, it is preferable that the composition of the metal silicide is W, Fe, Mn, Mg, Mo, Cr, Ru, Re, Co, Ni, Ta, Ba and at least one selected from the group consisting of Ba and Ba. It is also possible to control the adhesion between the inorganic layer 14 and the glass substrate 18 by adjusting the number of OH groups or the surface flatness of the surface of the inorganic layer 14 by changing the metal / silicon source consumption.

Although the composition of the nitride is not particularly limited, Si, Hf, Zr, Ta, Ti, Nb, Na, Co, Al, Zn, Pb, Mg, Sn , And at least one element selected from the group consisting of In, B, Cr, Mo, and Ba. The adhesion between the inorganic layer 14 and the glass substrate 18 can also be controlled by adjusting the OH group number and the surface flatness of the surface of the inorganic layer 14 by changing the metal / nitrogen source consumption.

The composition of the carbide and the carbonitride is not particularly limited, but includes at least one kind of element selected from the group consisting of Ti, W, Si, Zr and Nb from the viewpoint of better releasability of the glass substrate 18 . The adhesion between the inorganic layer 14 and the glass substrate 18 can also be controlled by adjusting the number of OH groups or the surface flatness of the surface of the inorganic layer 14 by changing the metal / carbon source consumption.

At least one kind selected from the group consisting of metal silicide, nitride, carbide and carbonitride contained in the inorganic layer 14 may be partially oxidized. That is, an oxygen atom (oxygen element) (O) may be contained.

For example, silicon nitride (SiN) contained in the inorganic layer 14 may be silicon nitride oxide (hereinafter also referred to as SiNO), silicon carbide (SiC) may be silicon carbide silicon oxide ).

Therefore, in the present invention, at least one kind selected from the group consisting of SiC, SiCO, SiN and SiNO is a suitable form of the composition of the inorganic layer (14).

Above all, if the oxygen contained in the inorganic layer 14 is too much, the absorbency of the laser beam 41 (see FIG. 3A) to be described later decreases, 14 are difficult to be removed, and peelability may be deteriorated.

Therefore, if the power (fluence) of the laser beam 41 to be described later is, for example, the same 7 J / cm 2, the oxygen content in SiCO or SiNO is 7 mass% or less, for example, %.

The surface roughness Ra of the inorganic layer surface 14a is preferably 2.00 nm or less, more preferably 1.00 nm or less, and further preferably 0.20 to 1.00 nm. Ra (arithmetic average roughness) is measured according to JIS B 0601 (revised in 2001). The contents of JIS B 0601 (revised 2001) are incorporated herein by reference.

The inorganic layer 14 (hereinafter simply referred to as "average linear thermal expansion coefficient") of the average coefficient of thermal expansion at 25 to 300 ℃ is not particularly limited, but from the viewpoint of using a glass plate as a support substrate (12) 10 × 10 ^-7 To 200 x 10 < ^-7 > / DEG C is preferable. The difference in average linear expansion coefficient between the glass substrate (SiO ₂ ) and the glass substrate (18) can be reduced, and the positional deviation between the glass substrate (18) and the inorganic layer mounting supporting substrate (16) under a high temperature environment can be suppressed.

The inorganic layer 14 preferably contains the above-mentioned components as a main component. Here, the main component means that the total content thereof is 80 mass% or more based on the whole amount of the inorganic layer 14, preferably 90 mass% or more, more preferably 98 mass% or more, further preferably 99 mass% Especially preferable is 99.999 mass% or more.

The thickness of the inorganic layer 14 is preferably 5 to 5000 nm, more preferably 10 to 500 nm from the viewpoints of scratch resistance, surface roughness and cost.

If the inorganic layer 14 is too thin, the absorbency of the laser beam 41 (see FIG. 3A) to be described later is lowered, and the inorganic layer 14 is removed And the peelability may be deteriorated. For this reason, it is preferable that the thickness of the inorganic layer 14 is more than 10 nm from the viewpoint of facilitating the removal of the inorganic layer 14 and improving the peelability.

The inorganic layer 14 is described as a single layer in Fig. 1, but may be a laminate of two or more layers. When two or more layers are laminated, the composition may be different for each layer. In this case, the " thickness of the inorganic layer " means the total thickness of all the layers.

The inorganic layer 14 is formed on the entire surface of the support substrate 12 as shown in Fig. 1, and when the support substrate 12 is rectangular, the inorganic layer 14 is likewise rectangular. However, Or may be formed on a part of the surface of the support substrate 12. [ For example, the inorganic layer 14 may be formed on the surface of the support substrate 12 in an island shape or a stripe shape.

The inorganic layer 14 exhibits excellent heat resistance. Therefore, even if the glass laminate 10 is exposed to high temperature conditions, the chemical change of the inorganic layer itself is hard to occur, and it is difficult for the glass substrate 18 and the glass substrate 18, which will be described later, It is unlikely that the layer 14 is bonded and can not be peeled off.

(Method for manufacturing support substrate with inorganic layer)

The manufacturing method of the inorganic layer-mounting supporting substrate 16 is not particularly limited and a known method can be adopted. For example, a method of forming the inorganic layer 14 containing a predetermined component on the support substrate 12 by a vapor deposition method, a sputtering method, or a CVD method can be mentioned.

The production conditions are appropriately selected in accordance with the material to be used and the like.

After the formation of the inorganic layer 14 on the support substrate 12, the surface of the inorganic layer 14 may be subjected to a cutting process in order to control the surface roughness Ra of the inorganic layer surface 14a. Examples of the treatment include ion sputtering and the like.

[Glass Substrate]

The first main surface 18a of the glass substrate 18 is in intimate contact with the inorganic layer 14 and the second main surface 18b opposite to the inorganic layer 14 side is provided with an electronic device member to be described later.

The type of the glass substrate 18 may be a common one, and examples thereof include glass substrates for display devices such as LCDs and OLEDs. The glass substrate 18 is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage ratio. The coefficient of thermal expansion specified in JIS R 3102 (revised in 1995) is used as an index of the heat shrinkage ratio. The contents of JIS R 3102 (revised 1995) are incorporated herein by reference.

The glass substrate 18 is obtained by melting a glass raw material and shaping the molten glass into a plate. Such a forming method may be a general method, and for example, a float method, a fusion method, a slot down draw method, a fur coiling method, a lubrication method, or the like is used. Particularly, a glass substrate having a small thickness can be obtained by heating a glass molded into a plate shape at a moldable temperature, thinning it by means of drawing or the like (lead-through method).

Although the glass of the glass substrate 18 is not particularly limited, it is preferably an alkali-free borosilicate glass, borosilicate glass, soda lime glass, high silica glass, or other oxide-based glass mainly containing silicon oxide. The oxide-based glass is preferably a glass having a silicon oxide content of 40 to 90 mass% in terms of oxide.

As the glass for the glass substrate 18, glass suitable for the type of device and its manufacturing process is employed. For example, a glass substrate for a liquid crystal panel includes a glass (alkali-free glass) substantially free of an alkali metal component from the viewpoint that elution of an alkali metal component tends to affect the liquid crystal (however, Is included). Thus, the glass of the glass substrate 18 is appropriately selected based on the kind of the applied device and the manufacturing process thereof.

Although the thickness of the glass substrate 18 is not particularly limited, it is usually 0.8 mm or less, preferably 0.3 mm or less, more preferably 0.15 mm or less from the viewpoints of reducing the thickness and / or weight of the glass substrate 18 . If it is more than 0.8 mm, the requirement for thinning and / or lightening of the glass substrate 18 can not be satisfied. When the thickness is 0.3 mm or less, it is possible to impart good flexibility to the glass substrate 18. When the thickness is 0.15 mm or less, the glass substrate 18 can be rolled up. The thickness of the glass substrate 18 is preferably 0.03 mm or more for ease of manufacture of the glass substrate 18 and ease of handling of the glass substrate 18. [

The glass substrate 18 may be composed of two or more layers. In this case, the materials for forming the respective layers may be the same or different materials. In this case, the " thickness of the glass substrate " means the total thickness of all the layers.

≪ Glass laminate and manufacturing method thereof (Glass laminate manufacturing process) >

The glass laminate 10 has the inorganic layer mounting supporting substrate 16 and the inorganic layer mounting supporting substrate 16 with the inorganic layer surface 14a of the inorganic layer mounting supporting substrate 16 and the first main surface 18a of the glass substrate 18 as a lamination surface, ) And the glass substrate 18 are laminated so as to be peelable. In other words, the inorganic layer 14 is interposed between the support substrate 12 and the glass substrate 18.

The method for producing the glass laminate is not particularly limited. Specifically, after the support substrate 16 on which the inorganic layer is mounted and the glass substrate 18 are stacked under an atmospheric pressure environment, for example, the weight of the glass substrate 18, A method of generating a contact starting point in the overlapping surface by lightly pressing the second main surface 18b of the contact 18 at one place and naturally expanding the contact from the contact starting point; And a method of expanding the adhesion from the contact starting point by pressing using a roll or press. Compression by roll or press is preferable because the inorganic layer 14 and the glass substrate 18 are more closely adhered and the air bubbles mixed in between them are relatively easily removed.

In addition, when pressed by a vacuum laminating method or a vacuum press method, it is more preferable to suppress the incorporation of bubbles and to secure good adhesion. By pressing under vacuum, bubbles do not grow by heating even when minute bubbles remain, and there is an advantage that it is difficult to cause distortion defects.

When the inorganic layer mounting support substrate 16 and the glass substrate 18 are brought into peelable contact with each other, the surfaces of the inorganic layer 14 and the glass substrate 18 on which the glass substrate 18 is in contact with each other are cleaned sufficiently, It is preferable to laminate them. The higher the cleanliness, the better the flatness of the side of the side contacting each other.

The cleaning method is not particularly limited. For example, a method of cleaning the surface of the inorganic layer 14 or the glass substrate 18 with an aqueous alkali solution, followed by washing with water is also cited.

The glass laminate 10 can be used for various purposes, for example, for producing electronic components such as display panel, PV, thin-film secondary battery, and a semiconductor wafer on which a circuit is formed on a surface, have. Further, in the intended use, the glass laminate 10 is often exposed to high temperature conditions (for example, 350 DEG C or more) (for example, 1 hour or more).

Here, the display device panel includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

≪ Method of manufacturing electronic device &

Next, a preferred embodiment of the electronic device manufacturing method of the present invention will be described in detail.

Figs. 2 to 4 are schematic cross-sectional views sequentially showing respective manufacturing steps in a preferred embodiment of the electronic device manufacturing method of the present invention. Fig. A preferred embodiment of the electronic device of the present invention comprises a glass laminate manufacturing process, a member forming process, an irradiating process and a separating process.

Hereinafter, with reference to Fig. 2, the material used in each step and the procedure thereof will be described in detail. Since the glass laminate manufacturing process is as described above, the description is omitted.

First, the member forming process will be described in detail.

[Member forming process]

2, the member 20 for electronic devices is formed on the second main surface 18b of the glass substrate 18 in the glass laminate 10, Member mounting laminate 22 according to the present invention.

At this time, the electronic device member 20 may not be formed on the entire surface of the second main surface 18b of the glass substrate 18. [ That is, it may be formed on the second main surface 18b while leaving a non-formation area in the periphery of the glass substrate 18 (second main surface 18b) as shown in Fig.

Here, the peripheral edge of the glass substrate 18 (second main surface 18b) is a region constituting the outer edge of the glass substrate 18 (second main surface 18b), and is a central region occupying the inside of the region 18b Is a relative concept that distinguishes it.

That is, the electronic device member 20 may be formed in the central region on the glass substrate 18 (the second main surface 18b).

First, the electronic device member 20 used in the present process will be described in detail and the procedure of the subsequent process will be described in detail.

(Member for electronic device (functional element))

The member 20 for the electronic device is a member formed on the second main surface 18b of the glass substrate 18 in the glass laminate 10 and constituting at least a part of the electronic device. More specifically, the member 20 for the electronic device is a member used for a display device panel, a solar cell, a thin-film secondary battery, and an electronic part such as a semiconductor wafer on which a circuit is formed on a surface. The panel for the display device includes an organic EL panel, a plasma display panel, a field emission panel, and the like.

For example, examples of members for solar cells include a transparent electrode such as tin oxide of a positive electrode in a silicon type, a silicon layer and a negative electrode metal represented by p layer / i layer / n layer, and the like. Various types of members corresponding to a sensitization type, a quantum dot type, and the like.

Examples of members for a thin film secondary battery include a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a current collecting layer, a resin as a sealing layer and the like as a lithium ion type. Various members corresponding to nickel-nickel-plated, polymer-type, ceramics-electrolyte-type, and the like.

Examples of members for electronic parts include metals in conductive parts such as CCD and CMOS, silicon oxide and silicon nitride in insulating part, and others as various sensors such as pressure sensors and acceleration sensors, rigid printed boards, flexible printed boards, rigid flexible Various members corresponding to a printed board and the like.

(Process procedure)

The method of manufacturing the above-described electronic device-mounting member laminate 22 is not particularly limited, and the method of manufacturing the electronic device-mounting member 22 may be performed by a known method according to the type of the constituent member of the electronic device member. And the electronic device member 20 is formed on the second main surface 18b.

The electronic device member 20 is not a whole of a member finally formed on the second main surface 18b of the glass substrate 18 (hereinafter, referred to as an "entire member"), Quot; partial member "). The partial member mounting glass substrate may be replaced with an entire member mounting glass substrate (corresponding to an electronic device to be described later) in a subsequent step. Further, another electronic device member may be formed on the peeling surface (first main surface) of the entire member-mounted glass substrate. Further, the electronic device may be manufactured by assembling the whole member mounting laminate, and thereafter peeling the inorganic layer mounting supporting substrate 16 from the whole member mounting laminate. Further, the electronic device is assembled by using two pieces of the whole member mounting laminate, and then the two inorganic-layer mounting supporting substrates 16 are peeled from the whole member mounting laminate to obtain an electronic device having two glass substrates Devices may be fabricated.

For example, in the case of manufacturing an OLED, a transparent electrode may be formed to form an organic EL structure on the surface of the second main surface 18b of the glass substrate 18 of the glass laminate 10, A back electrode for depositing a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, or the like is formed on the surface on which the transparent electrode is formed, and various layers are formed and processed such as sealing with a sealing plate. Specific examples of these layer formation and treatment include film forming treatment, vapor deposition treatment, bonding treatment of a sealing plate, and the like.

For example, the manufacturing method of the TFT-LCD can be performed by a general film forming method such as a CVD method and a sputtering method using a resist solution on the second main surface 18b of the glass substrate 18 of the glass laminate 10 A TFT forming step of forming a thin film transistor (TFT) by forming a pattern on a metal film and a metal oxide film to be formed on the glass substrate 18; A CF forming step of forming a color filter CF by use of a pattern, and a bonding step of laminating a TFT mounting device substrate and a CF mounting device substrate.

In the TFT forming step and the CF forming step, a TFT or CF is formed on the second main surface 18b of the glass substrate 18 by using a well-known photolithography technique or an etching technique. At this time, a resist solution is used as a coating liquid for pattern formation.

Before forming the TFT or CF, the second main surface 18b of the glass substrate 18 may be cleaned as necessary. As the cleaning method, well-known dry cleaning or wet cleaning can be used.

In the bonding step, a liquid crystal material is injected between the TFT mounting laminate and the CF mounting laminate and laminated. Examples of the method of injecting the liquid crystal material include a reduced pressure injection method and a dropping injection method.

[Irradiation Process]

3 (A), a part or all of the periphery of the inorganic layer 14 in the electronic-device-unit mounting laminate 22 is irradiated with the laser light 41 Thereby forming a removal region 15 on a part or the whole of the periphery of the inorganic layer 14, as shown in Fig. 3 (B). The removed part 15 formed in the irradiation step becomes the peeling starting point in the separation step to be described later.

The irradiation direction of the laser beam 41 is not particularly limited and may be irradiated from the glass substrate 18 side to the inorganic layer 14 and may be from the side of the support substrate 12 as shown in Fig. The inorganic layer 14 may be irradiated. The laser beam 41 reaches the inorganic layer 14 through the glass plate 18 or the support substrate 12 because the support substrate 12 is a glass plate as well as the glass substrate 18.

From the viewpoint of avoiding the irradiation of the laser beam 41 to the electronic device member 20 on the glass substrate 18 and suppressing the damage caused by the irradiation with the glass substrate 18 as the product, It is preferable to irradiate the inorganic layer 14 from the support substrate 12 side as shown in Fig. 3 (A).

Further, the laser beam 41 may be irradiated to the inorganic layer 14 from the side surface of the electronic-device-mounting-member mounting body 22.

The portion irradiated with the laser beam 41 is part or all of the peripheral portion of the inorganic layer 14. The inorganic layer 14 corresponding to the non-formation area of the electronic device member 20 on the second major surface 18b of the glass substrate 18 as a part or the whole of the periphery of the inorganic layer 14, It is also good to give part or all of the area.

The width of the portion to be irradiated with the laser beam 41 (the portion to be the removed portion 15) (the length in the left-right direction in FIGS. 3A and 3B) Is preferably narrower than the width of the non-formation region of the member 20 (the length in the left-right direction in Figs. 3A and 3B).

3 (A), when the laser beam 41 is irradiated from the support substrate 12 side to the inorganic layer 14, the laser beam 41 is irradiated onto the inorganic layer 14, And the glass substrate 18, as shown in Fig.

However, in the present invention, the laser beam 41 is not irradiated on the entire surface, but is irradiated to a part or all of the periphery of the inorganic layer 14. Particularly, some or all of the periphery of the inorganic layer 14 and some or all of the inorganic layer 14 corresponding to the non-formation region of the electronic device member 20 may be irradiated. Even when the laser beam 41 passes through the inorganic layer 14 and the glass substrate 18, the irradiation of the laser beam 41 also reaches the electronic device member 20, Is prevented from being damaged.

Further, since the laser light 41 is not irradiated on the entire surface, the time required for irradiating the laser light 41 is shortened, leading to low cost and high productivity.

The electronic device member formed on the glass substrate 18 does not affect the function of the electronic device 24 (see Fig. 4) described below even if it is broken by irradiation with the laser beam 41 (Not substantially constituting the electronic device 24), it may be formed in the above-described non-formation area. Therefore, it is assumed that the electronic device member which does not substantially constitute the electronic device 24 is not included in the electronic device member 20 of the present invention.

It is preferable that the irradiated portion (the portion to be the removed portion 15) of the laser beam 41 on the periphery of the inorganic layer 14 is a part or all of the periphery of the inorganic layer 14 and a part thereof. The removed portion 15 may include a portion including an angle or a side of the inorganic layer 14, for example, when the glass laminate 10 including the inorganic layer 14 is a rectangle.

More specifically, when the removed portion 15 is a portion including the angle of the inorganic layer 14, the shape of the inorganic layer 14 in plan view can be, for example, a triangle or a quadrangle, 14 is preferably a triangle or a square having a length of 3 mm or more and a triangle having a length of 5 mm or more and 20 mm or less with a vertex of the inorganic layer 14 as a vertex, More preferably, a triangle having an apex of at least one apex of the inorganic layer 14 seen from the plane is 5 mm or more and less than 10 mm.

In the case where the removed portion 15 is a portion including the sides of the inorganic layer 14, the shape of the removed portion 15 as viewed in a plane may be, for example, one side of the inorganic layer 14 (Depth) of 3 mm or more, and the depth is preferably less than 10 mm.

The area of the removed portion 15 in the inorganic layer 14 seen from the plane is, for example, 100 mm 2 or more, and preferably 900 mm 2 or more.

For example, a UV laser (wavelength: 355 nm), a green laser (wavelength: 532 nm), and a semiconductor laser (wavelength: 808 nm, 940 nm) are used as the light source of the laser light 41 used in the irradiation step , A fiber laser (wavelength: 1060 to 1100 nm), and a YAG laser (wavelength: 1064 nm, 2080 nm, 2940 nm).

There is no limitation on the oscillation method of the laser light 41, and both a CW laser for continuously oscillating the laser light and a pulse laser for intermittently oscillating the laser light can be used.

The beam shape (intensity distribution) of the laser beam 41 is not particularly limited, and it may be a top hat type TH or a Gauss type (GA). 3 (A), when the laser beam 41 is irradiated from the support substrate 12 side, the damage to the glass substrate 18 due to the laser beam 41 reaching the glass substrate 18 The top hat type TH is preferable.

The power of the laser light 41 (also referred to as fluence (energy per unit area)) is appropriately changed depending on the material and thickness of the inorganic layer 14 to be irradiated, and is set to, for example, 4 to 10 J / It is desirable to suppress the damage to the support substrate 12 and the glass substrate 18, and to lower the power from the viewpoint of cost reduction.

[Separation Process]

As shown in Fig. 4, the separation step is a step of separating the electronic part mounting laminate 22 from the electronic part mounting laminate 22 having the removed part 15 formed in the irradiation step, The glass substrate 16 is peeled off to obtain the electronic device 24 including the electronic device member 20 and the glass substrate 18 (glass substrate for electronic devices).

That is, in the separating step of the present invention, the arbitrary point in the electronic device-mounted laminate 22 is not used as the peeling starting point, and the above-mentioned removed portion 15 is used as the peeling starting point, The substrate 16 is peeled off as if it is peeled off from the removed portion 15.

Specifically, when the removed portion 15 is angled, it is peeled so that the triangular shaped peeling surface is widened from the angle, and when the removed portion 15 is the side, the peeling surface having a rectangular shape from one side is widened Peel off.

By this separation process, the member mounting laminate 22 for electronic devices is separated into the inorganic layer mounting supporting substrate 16 and the member mounting glass substrate 24 for electronic devices.

In the case where the electronic device member 20 on the glass substrate 18 at the time of peeling is a partial member, the remaining constituent members after the separation may be formed on the glass substrate 18. [

The method of peeling (separating) the inorganic layer surface 14a of the inorganic layer 14 from the first main surface 18a of the glass substrate 18 is such that if the removed portion 15 is the peeling point (peeling moment) And is not particularly limited. For example, a mixed fluid of water and compressed air may be sprayed to the removed portion 15 to be peeled off.

Further, a specific apparatus may be used, and for example, a peeling apparatus (not shown) described in International Publication No. 2011/024689 may be used. At this time, the support substrate 12 of the electronic device-mounting member stack 22 is placed on the upper side, the electronic device member 20 is placed on the lower side, and a pad (not shown) . Then, an air layer is formed at the interface between the inorganic layer 14 and the glass substrate 18, and the air layer is spread over the entire surface of the interface, so that the inorganic layer mounting supporting substrate 16 can be easily peeled off.

The electronic device 24 obtained by the above process is suitable for manufacturing a small-sized display device used in a mobile terminal such as a cellular phone, a smart phone, a PDA, a tablet PC, and the like. The display device is mainly an LCD or an OLED, and the LCD includes a TN type, an STN type, an FE type, a TFT type, an MIM type, an IPS type and a VA type. It can basically be applied to either the passive drive type or the active drive type.

In the above description, the electronic device member is formed in the central region on the glass substrate. However, the present invention is not limited to this, and the electronic device member may include a region including at least part of the periphery of the glass substrate As shown in Fig. Even in this case, the laser light may be irradiated to a part or the whole of the periphery of the inorganic layer and also to the inorganic layer region corresponding to the non-formation region of the electronic device member on the second main surface of the glass substrate.

[Example]

Hereinafter, the present invention will be described in detail by way of examples and the like, but the present invention is not limited to these examples.

In the following examples (Examples and Comparative Examples), a glass plate (200 mm x 200 mm, thickness 0.2 mm, coefficient of linear expansion 38 x 10 < ^-7 > / ° C, manufactured by Asahi Glass Co., AN100 ") was used.

A glass plate (200 mm x 200 mm, thickness 0.5 mm, coefficient of linear expansion of 38 x 10 < ^-7 > / deg. C, product of Asahi Glass Co., Ltd., trade name " AN100 ") containing an alkali-free borosilicate glass was used as the supporting substrate.

≪ Examples I-1 to I-8 >

(Formation of an inorganic layer containing SiC or SiCO)

One major surface of the supporting substrate was cleaned by pure cleaning and then UV cleaning. In addition, SiC or SiCO was deposited by a magnetron sputtering method (room temperature, film forming pressure 5 mTorr, power density 4.9 W / cm 2) while introducing Ar gas or a mixed gas of Ar and O ₂ using a SiC target on the cleaned surface. An inorganic layer was formed to obtain an inorganic layer-mounted supporting substrate. The thickness (unit: nm) and the amount of O ₂ (unit: mass%) of the formed inorganic layer are shown in Table 1 below. The surface roughness Ra of the formed inorganic layer was in the range of 0.2 to 0.5 nm.

(Lamination of glass substrate)

Subsequently, the first main surface of the glass substrate was cleaned pure and then UV cleaned. On each of the inorganic layer surface of the inorganic layer of the inorganic layer-mounting supporting substrate of each example and the first main surface of the glass substrate which had been cleaned, cleaning with an aqueous alkaline solution and cleaning with water were performed to clean each surface. Thereafter, the glass substrate was superimposed on the surface of the inorganic layer and, if necessary, a vacuum press was used to press the inorganic layer and the glass substrate were laminated to obtain a glass laminate.

(Formation of member for electronic device)

Subsequently, a member for an electronic device was formed on a glass substrate of each example glass laminate obtained for producing an OLED.

More specifically, molybdenum was deposited on the second main surface of the glass substrate in the glass laminate by the sputtering method, and the gate electrode was formed by etching using photolithography. Subsequently, a film of silicon nitride, intrinsic amorphous silicon, and n-type amorphous silicon is formed in this order on the second main surface side of the glass substrate on which the gate electrode is formed by plasma CVD, and then molybdenum is deposited by sputtering , A gate insulating film, a semiconductor element portion, and a source / drain electrode were formed by etching using a photolithography method. Subsequently, a silicon nitride film is formed on the second main surface side of the glass substrate by the plasma CVD method to form a passivation layer, and thereafter, indium tin oxide is formed by sputtering. Then, by the etching using the photolithography method, .

Subsequently, 4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine was used as a hole injecting layer and bis [(N-naphthyl) (4-methoxyphenyl) -N-phenyl] aminostyryl] naphthalene as a light emitting layer was added to an 8-quinolinol aluminum complex (Alq ₃ ) (BSN-BCN), and Alq ₃ as an electron transporting layer were formed in this order on the second main surface side of the glass substrate. Next, aluminum was deposited on the second main surface side of the glass substrate by the sputtering method Then, another counter electrode was formed by etching using a photolithography method. Next, one glass substrate was further bonded and sealed on the second main surface of the glass substrate on which the counter electrodes were formed via an ultraviolet curable adhesive layer. The glass laminate having the organic EL structure on the glass substrate obtained by the procedure is a And corresponds to a member mounting laminate for a vise.

The electronic device member such as the gate electrode formed on the second main surface of the glass substrate is not formed on the peripheral portion which is an area up to 10 mm from the end surface of the glass substrate but is formed only in the central region occupying the inside of the peripheral portion, This peripheral portion was a non-forming region of the electronic device member.

(Irradiation of laser light (formation of removal site))

YAG fundamental wave laser light (wavelength: 1060 nm, frequency: 6 kHz, output: 480 W, pulse width: 40 ns) was irradiated onto the periphery of the inorganic layer from the support substrate side as a glass plate to form a removal site Respectively. In addition, the periphery of the inorganic layer corresponds to the non-formation region of the member for the electronic device.

Although the beam shape of the laser beam was a Gaussian type, it was molded into a top hat type with a lens if necessary.

Table 1 shows the beam shape (top hat type (TH) or gauss type (GA)) and power (unit: J / cm 2) of the irradiated laser light.

Table 1 also shows the shape of the removed portion formed by irradiation with laser light.

In the case where a triangular removal portion is formed at an angle which is a part of the periphery of the inorganic layer, the length (unit: mm x mm) of two sides from the vertex is described after "angle" is described.

In the case where the removed portion is formed on the side of the periphery of the inorganic layer, the length of the end face and the distance from the end face (unit: mm x mm) are described after "side".

In the case where laser light is irradiated on the entire surface of the inorganic layer, it is described as " entire surface ".

(Peeling)

After the removed portion was formed, the peeling was performed using the peeling device (not shown) described in FIG. 1 of International Publication No. 2011/024689, with the removed portion 15 as the peeling starting point. Specifically, the sealing member side of the member mounting laminate for electronic devices is vacuum-adsorbed on a stage (not shown), then a pad (not shown) is provided on the supporting substrate, . Thus, the inorganic layer-mounted supporting substrate was separated to obtain an OLED panel (equivalent to an electronic device, hereinafter referred to as panel A). In addition, in all the examples, peeling (separation) was possible. Therefore, " o " is described in the item of " peelability "

(My damage)

The panel A corresponding to the electronic device was evaluated for damage caused by irradiation with laser light. The evaluation results are shown in Table 1 below.

An IC driver was connected to the panel A and driven under normal temperature and pressure. When the display irregularity was not confirmed in the driving area, "? &Quot; If it is "? &Quot;, it can be evaluated that the damage to the electronic device member on the glass substrate can be suppressed (the damage resistance is excellent).

The damage resistance of the peripheral portion of the glass substrate on which the electronic device member was formed was also evaluated. The glass substrate was observed with an optical microscope. When the cracks and cracks were not confirmed, the marks were marked with "? &Quot;, and when the cracks were small enough not to cause cracks, " DELTA " &Quot; and " DELTA " have no practical problem, but " " is preferable.

As shown in Table 1, Examples I-1 to I-7 all showed excellent peeling properties while suppressing damage to the electronic device member on the glass substrate.

On the other hand, in Example I-8, the peeling property was good, but the damage of the member for the electronic device was confirmed. It is considered that this is because the laser light reaches the members for the electronic device formed outside the periphery by irradiating the entire surface with the laser light.

<Example II>

An OLED panel corresponding to an electronic device was fabricated in the same manner as in Example I-1, except that an inorganic layer containing ITO was formed. Evaluation was made in the same manner as in Example I, and the peeling property was also excellent while suppressing damage to the electronic device member on the glass substrate.

Although the present invention has been described in detail with reference to specific embodiments, it is apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention.

The present application is based on Japanese Patent Application No. 2013-251726 filed on December 5, 2013, the contents of which are incorporated herein by reference.

10: Glass laminate
12: Support substrate
14: inorganic layer
14a: a surface of the inorganic layer (surface on the inorganic layer opposite to the support substrate side)
15: Removed site
16: inorganic layer mounting supporting substrate
18: glass substrate
18a: a first main surface of the glass substrate
18b: a second main surface of the glass substrate
20: Member for electronic device
22: Member mounting laminate for electronic device
24: Electronic device
41: laser light

Claims (6)

A glass laminate manufacturing process for obtaining a glass laminate having an inorganic layer mounting support substrate having a support substrate which is a glass plate and an inorganic layer which is disposed on the support substrate and a glass substrate which is peelably laminated on the inorganic layer,
A member forming step of forming an electronic device member on the surface of the glass substrate in the glass laminate to obtain a member mounting laminate for an electronic device,
An irradiating step of removing a part or all of the periphery of the inorganic layer in the electronic device-mounting member laminate by irradiation with laser light to form a removal site of the inorganic layer;
A separation step of separating the inorganic layer mounting supporting substrate from the electronic device-mounting member mounting laminate with the removal area as a separation starting point to obtain an electronic device having the glass substrate and the electronic device member
And a step of forming the electronic device. The electronic device according to claim 1, wherein the electronic device member is formed on a part of the surface of the glass substrate, and the laser light is a part or the whole of the periphery of the inorganic layer, Wherein the inorganic layer region is irradiated to a part or all of the inorganic layer region corresponding to the non-formation region which is not formed. The method of manufacturing an electronic device according to claim 1 or 2, wherein the irradiation step is a step of irradiating the laser beam onto the inorganic layer from the side of the support substrate or the side of the glass substrate. The method of manufacturing an electronic device according to any one of claims 1 to 3, wherein the removal portion is a portion including an angle or sides of the inorganic layer. The method of manufacturing an electronic device according to any one of claims 1 to 4, wherein the light source of the laser light is a YAG laser. The method of manufacturing an electronic device according to any one of claims 1 to 5, wherein the beam shape of the laser beam is a top hat type.

Images