JP2013184346A - Glass laminate, and method for producing electronic device - Google Patents

Glass laminate, and method for producing electronic device Download PDF

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Publication number
JP2013184346A
JP2013184346A JP2012050151A JP2012050151A JP2013184346A JP 2013184346 A JP2013184346 A JP 2013184346A JP 2012050151 A JP2012050151 A JP 2012050151A JP 2012050151 A JP2012050151 A JP 2012050151A JP 2013184346 A JP2013184346 A JP 2013184346A
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Japan
Prior art keywords
inorganic layer
glass
glass substrate
substrate
metal
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JP2012050151A
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Japanese (ja)
Inventor
Yosuke Akita
陽介 秋田
Yoshitaka Matsuyama
祥孝 松山
Kenichi Ehata
研一 江畑
Daisuke Uchida
大輔 内田
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Asahi Glass Co Ltd
旭硝子株式会社
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Priority to JP2012050151A priority Critical patent/JP2013184346A/en
Publication of JP2013184346A publication Critical patent/JP2013184346A/en
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment

Abstract

The present invention provides a glass laminate capable of easily peeling a glass substrate even after treatment under a high temperature condition, and a method for producing an electronic device using the glass laminate. For the purpose.
A support substrate with an inorganic layer comprising a support substrate and a first inorganic layer disposed on the support substrate, and a glass substrate with an inorganic layer comprising a glass substrate and a second inorganic layer disposed on the glass substrate. And the first inorganic layer and the second inorganic layer are selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, metal carbides, metal carbonitrides, metal silicides and metal fluorides A support substrate with an inorganic layer and a glass with an inorganic layer, wherein the surface of the first inorganic layer of the support substrate with an inorganic layer and the surface of the second inorganic layer of the glass substrate with an inorganic layer are laminated surfaces. A glass laminate that is laminated with a substrate in a peelable manner.
[Selection figure] None

Description

  The present invention relates to a glass laminate that is a laminate of a glass substrate and a support substrate, which is used when manufacturing an electronic device such as a liquid crystal display or an organic EL display using a glass substrate, and an electronic device using the same The present invention relates to a device manufacturing method.

  In recent years, electronic devices (electronic devices) such as solar cells (PV), liquid crystal panels (LCD), and organic EL panels (OLED) have been made thinner and lighter, and a thin glass substrate used for these electronic devices. Progress is being made. If the strength of the glass substrate is insufficient due to the reduction in thickness, the handling properties of the glass substrate deteriorate in the manufacturing process of the electronic device.

  Therefore, recently, in order to cope with the above-mentioned problem, after preparing a laminate in which a glass substrate is laminated on an inorganic thin film of a supporting glass with an inorganic thin film, and after performing a manufacturing process of an element on the glass substrate of the laminate, A method for separating a glass substrate from a laminate has been proposed (Patent Document 1). According to this method, it is disclosed that the handling of the glass substrate can be improved and appropriate positioning can be performed, and the glass substrate on which the elements are arranged can be easily peeled off from the laminate after a predetermined treatment. ing.

JP 2011-184284 A

On the other hand, in recent years, with the demand for higher performance of electronic devices, it is desired to carry out treatment under high temperature conditions (for example, 450 ° C.) when manufacturing electronic devices.
The present inventors performed heat treatment under high temperature conditions (for example, 450 ° C.) using a laminate in which a glass substrate is disposed on an inorganic thin film of a supporting glass with an inorganic thin film described in Patent Document 1. As a result, the glass substrate could not be peeled from the laminate after the treatment. In this aspect, after the device is manufactured under a high temperature condition, there arises a problem that the glass substrate on which the element is formed cannot be peeled from the laminate.

  The present invention has been made in view of the above problems, and uses a glass laminate that can easily peel a glass substrate even after treatment under high temperature conditions, and the glass laminate. It is an object of the present invention to provide a method for manufacturing an electronic device.

As a result of intensive studies to solve the above problems, the present inventors have found that the above problems can be solved by forming a predetermined inorganic layer on a glass substrate, and the present invention has been completed.
That is, the first aspect of the present invention includes a support substrate and a support substrate with an inorganic layer including a first inorganic layer disposed on the support substrate, and a second inorganic layer disposed on the glass substrate and the glass substrate. The first inorganic layer and the second inorganic layer are made of a metal oxide, a metal nitride, a metal oxynitride, a metal carbide, a metal carbonitride, a metal silicide, and a metal. At least one selected from the group consisting of fluorides, with an inorganic layer, wherein the surface of the first inorganic layer of the support substrate with an inorganic layer and the surface of the second inorganic layer of the glass substrate with an inorganic layer are laminated surfaces It is a glass laminated body formed by laminating | supporting a support substrate and the glass substrate with an inorganic layer so that peeling is possible.
In the first aspect, it is preferable that the first inorganic layer and the second inorganic layer include at least a metal oxide.
In the first aspect, the surface roughness Ra of the first inorganic layer and the surface roughness Ra of the second inorganic layer are preferably 5 nm or less.
In the first embodiment, it is preferable that the support substrate with an inorganic layer and the glass substrate with an inorganic layer can be peeled even after heat treatment at 450 ° C. for 1 hour.

  Moreover, the 2nd aspect of this invention forms the member for electronic devices on the surface of the glass substrate in the glass laminated body which is a 1st aspect, The member formation process of obtaining the laminated body with a member for electronic devices, A separation step of removing the support substrate with an inorganic layer from the laminate with the member for electronic device and obtaining an electronic device having the support substrate with an inorganic layer and the member for electronic device is a method for producing an electronic device.

  According to the present invention, there is provided a glass laminate capable of easily peeling a glass substrate even after treatment under high temperature conditions, and a method for producing an electronic device using the glass laminate. Can do.

It is typical sectional drawing of one Embodiment of the glass laminated body which concerns on this invention. It is process drawing of the manufacturing method of the electronic device of this invention.

  Hereinafter, preferred embodiments of the glass laminate and the electronic device manufacturing method of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments and departs from the scope of the present invention. Without limitation, various modifications and substitutions can be made to the following embodiments.

One feature of the glass laminate of the present invention is that a separate inorganic layer (second inorganic layer) is interposed between the support substrate with an inorganic layer and the glass substrate. By interposing the second inorganic layer, adhesion of the glass substrate to the support substrate with an inorganic layer under high temperature conditions can be suppressed, and the glass substrate can be easily peeled after a predetermined treatment. In particular, by interposing the second inorganic layer, the physical interaction has a greater influence than the chemical interaction as a factor of adhesion between the support substrate with the inorganic layer and the second inorganic layer, As a result, it is presumed that both can be easily peeled even after high temperature treatment.
Below, the suitable aspect of a glass laminated body is explained in full detail first, and the suitable aspect of the manufacturing method of the electronic device using this glass laminated body is explained in full detail after that.

<Glass laminate>
FIG. 1 is a schematic cross-sectional view of an embodiment of a glass laminate according to the present invention.
As shown in FIG. 1, the glass laminate 10 includes an inorganic layer-supported substrate 16 composed of a support substrate 12 and a first inorganic layer 14, and an inorganic layer-coated glass substrate composed of a glass substrate 18 and a second inorganic layer 20. 22. In the glass laminated body 10, the surface 14a (surface opposite to the support substrate 12 side) of the first inorganic layer 14 of the support substrate 16 with inorganic layer and the second inorganic layer 20 of the glass substrate 22 with inorganic layer. The support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer are laminated so as to be peelable, with the surface 20a (the surface opposite to the glass substrate 20 side) as a laminate surface. In other words, the interface between the first inorganic layer 14 and the second inorganic layer 20 adheres in a peelable manner.
The first inorganic layer 14 is fixed on the support substrate 16, and the second inorganic layer 20 is fixed on the glass substrate 18.

  Moreover, this glass laminated body 10 is used until the member formation process mentioned later. That is, the glass laminate 10 is used until an electronic device member such as a liquid crystal display device is formed on the surface of the second main surface 18b of the glass substrate 18. Thereafter, the layer of the support substrate 16 with the inorganic layer is peeled off at the interface with the layer of the second inorganic layer 20, and the layer of the support substrate 16 with the inorganic layer does not become a part constituting the electronic device. The separated support substrate 16 with an inorganic layer is laminated with a new glass substrate 22 with an inorganic layer, and can be reused as the glass laminate 10.

As described above, the first inorganic layer 14 is fixed on the support substrate 12, and the second inorganic layer 20 is fixed on the glass substrate 18. In the present invention, the fixing and peelable adhesion have a difference in peeling strength (that is, stress required for peeling), and fixing means that the peeling strength is larger than the adhesion. Specifically, the peel strength at the interface between the first inorganic layer 14 and the support substrate 12 and the peel strength at the interface between the second inorganic layer 20 and the glass substrate 18 are the first in the glass laminate 10. The peel strength at the interface between the inorganic layer 14 and the second inorganic layer 20 becomes larger.
In other words, the peelable adhesion means that it can be peeled at the same time that it can be peeled without causing peeling of the fixed surface. Specifically, in the glass laminate 10, when an operation of separating the support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer is performed, the adhered surfaces (the first inorganic layer 14 and the second inorganic layer 14 It means that it peels at the interface with the layer 20 and does not peel on the fixed surface.

  Below, the support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer which comprise the glass laminated body 10 are explained in full detail first, and the procedure of manufacture of the glass laminated body 10 is explained in full detail after that.

[Support substrate with inorganic layer]
The support substrate 16 with an inorganic layer includes a support substrate 12 and a first inorganic layer 14 disposed (fixed) on the surface thereof. The 1st inorganic layer 14 is arrange | positioned in the outermost side in the support substrate 16 with an inorganic layer so that it may closely_contact | adhere with the glass substrate 22 with an inorganic layer mentioned later so that peeling is possible.
Below, the aspect of the support substrate 12 and the 1st inorganic layer 14 is explained in full detail.

(Support substrate)
The support substrate 12 has a first main surface and a second main surface, and supports the glass substrate 22 with an inorganic layer in cooperation with the first inorganic layer 14 disposed on the first main surface. It is a substrate that reinforces and prevents deformation, scratching, breakage, and the like of the glass substrate 18 during the manufacture of the electronic device member in the member forming step (step of manufacturing the electronic device member) described below.
As the support substrate 12, for example, a metal plate such as a glass plate, a plastic plate, or a SUS plate is used. When the member forming step involves heat treatment, the support substrate 12 is preferably formed of a material having a small difference in linear expansion coefficient from the glass substrate 18, and more preferably formed of the same material as the glass substrate 18, The support substrate 12 is preferably a glass plate. In particular, the support substrate 12 is preferably a glass plate made of the same glass material as the glass substrate 18.

  The thickness of the support substrate 12 may be thicker or thinner than a glass substrate 18 described later. Preferably, the thickness of the support substrate 12 is based on the thickness of the glass substrate 18, the thickness of the first inorganic layer 14, the thickness of the second inorganic layer 20, and the thickness of the glass laminate 10 described later. Is selected. For example, the current member forming process is designed to process a substrate having a thickness of 0.5 mm, and the sum of the thickness of the glass substrate 18, the first inorganic layer 14, and the second inorganic layer 20. Is 0.1 mm, the thickness of the support substrate 12 is 0.4 mm. In general, the thickness of the support substrate 12 is preferably 0.2 to 5.0 mm.

  When the support substrate 12 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more because it is easy to handle and difficult to break. Further, the thickness of the glass plate is preferably 1.0 mm or less because the rigidity is desired so that the glass plate is appropriately bent without being broken when it is peeled off after forming the electronic device member.

The difference in average linear expansion coefficient at 25 to 300 ° C. between the support substrate 12 and the glass substrate 18 (hereinafter simply referred to as “average linear expansion coefficient”) is preferably 500 × 10 −7 / ° C. or less, more preferably It is 300 × 10 −7 / ° C. or less, more preferably 200 × 10 −7 / ° C. or less. If the difference is too large, the glass laminate 10 may be warped violently during heating and cooling in the member forming process. When the material of the glass substrate 18 and the material of the support substrate 12 are the same, it can suppress that such a problem arises.

(First inorganic layer)
The first inorganic layer 14 is a layer disposed (fixed) on the main surface of the support substrate 12 and in contact with the second inorganic layer 20 of the glass substrate 22 with an inorganic layer. By providing the layer 14 on the support substrate 12, adhesion of the glass substrate 18 can be suppressed even after processing under high temperature conditions.

The first inorganic layer 14 includes at least one selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, metal carbides, metal carbonitrides, metal silicides, and metal fluorides. Especially, it is preferable that a metal oxide is included at the point which the peelability of the glass substrate 18 is more excellent. Of these, indium tin oxide is more preferable.
The first inorganic layer 14 includes two or more selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, metal carbonitrides, metal carbides, metal silicides, and metal fluorides. It may be.

Examples of the metal oxide, metal nitride, and metal oxynitride include Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, and Pr. , Sm, Eu, Gd, Dy, Er, Sr, Sn, In, and Ba, oxides, nitrides, and oxynitrides of one or more elements selected from Ba and the like. More specifically, titanium oxide (TiO 2 ), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), gallium oxide (Ga 2 O 3 ), indium tin oxide (ITO) Indium zinc oxide (IZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), and the like.

  Examples of the metal carbide and metal carbonitride include carbides and carbonitrides of one or more elements selected from Ti, W, Si, Zr, and Nb. Examples of the metal silicide include a silicide of one or more elements selected from Mo, W, and Cr. Examples of the metal fluoride include fluorides of one or more elements selected from Mg, Y, La, and Ba.

The average linear expansion coefficient of the first inorganic layer 14 is not particularly limited, but when a glass plate is used as the support substrate 12, the average linear expansion coefficient is preferably 10 × 10 −7 to 200 × 10 −7 / ° C. . If the range, the difference in average linear expansion coefficient between the glass plates (SiO 2) is reduced, to further suppress the positional displacement between the inorganic layer coated glass substrate 22 and the inorganic layer with the supporting substrate 16 in a high temperature environment Can do.

  The first inorganic layer 14 preferably contains the metal oxide, metal nitride, metal oxynitride, metal carbide, metal carbonitride, metal silicide, or metal fluoride as a main component. Here, the main component means that the total content thereof is 90% by mass or more with respect to the total amount of the first inorganic layer 14, and is preferably 98% by mass or more, and 99% by mass. More preferably, it is more preferably 99.999% by mass or more.

Although the thickness in particular of the 1st inorganic layer 14 is not restrict | limited, 5-5000 nm is preferable and 10-500 nm is more preferable at the point which maintains abrasion resistance.
The first inorganic layer 14 is described as a single layer in FIG. 1, but may be a laminate of two or more layers.

  The 1st inorganic layer 14 may be provided in a part on the surface of the support substrate 12 in the range which does not impair the effect of this invention. For example, the first inorganic layer 14 may be provided in the form of islands or stripes on the surface of the support substrate 12.

Furthermore, the surface roughness (Ra) of the surface of the first inorganic layer 14 in contact with the second inorganic layer 20 (that is, the first inorganic layer surface 14a) is preferably 5 nm or less, and preferably 2 nm or less. It is more preferable. The lower limit is not particularly limited, but 0 is most preferable. If it is the said range, adhesiveness with the 2nd inorganic layer 20 will become more favorable, and position shift etc. of the glass substrate 22 with an inorganic layer can be suppressed more.
Ra is measured according to JIS B 0601 (revised 2001).

The first inorganic layer 14 exhibits excellent heat resistance. Therefore, even if the glass laminate 10 is exposed to a high temperature condition, the chemical change of the layer itself hardly occurs, and it is difficult to form a chemical bond with the second inorganic layer 20 described later. Is less likely to adhere to the first inorganic layer 14.
The above heavy peeling means that the peel strength at the interface between the first inorganic layer 14 and the second inorganic layer 20 is the peel strength at the interface between the support substrate 12 and the first inorganic layer 14 and the first It means that it becomes larger than any of the strength (bulk strength) of the material itself of the inorganic layer 14. When heavy peeling occurs at the interface between the first inorganic layer 14 and the second inorganic layer 20, components of the first inorganic layer 14 are likely to adhere to the surface of the second inorganic layer 20, and the surface is cleaned. Tends to be difficult. The adhesion of the first inorganic layer 14 to the surface of the second inorganic layer 20 means that the entire first inorganic layer 14 is adhered to the surface of the second inorganic layer 20 and the surface of the first inorganic layer 14 is It means that a part of the component on the surface of the first inorganic layer 14 is damaged and adheres to the surface of the second inorganic layer 20.

(Method for producing support substrate with inorganic layer)
The manufacturing method in particular of the support substrate 16 with an inorganic layer is not restrict | limited, A well-known method is employable. For example, the method of providing the 1st inorganic layer 14 which consists of a predetermined component on the support substrate 12 by a vapor deposition method or sputtering method is mentioned. For example, a silicon dioxide layer formed by a CVD method may be nitrided by a method such as plasma nitriding to form a silicon nitride oxide layer, or a silicon nitride layer formed by a CVD method may be formed by a plasma oxidation method or the like. A silicon nitride oxide layer may be formed by oxidation treatment by a method.
As manufacturing conditions, optimum conditions are appropriately selected according to the materials used.

  In addition, in order to control the surface property (for example, surface roughness Ra) of the 1st inorganic layer 14 formed on the support substrate 12 as needed, the process which scrapes the surface of the 1st inorganic layer 14 is carried out. You may give it. Examples of the treatment include an ion sputtering method.

[Glass substrate with inorganic layer]
The glass substrate 22 with an inorganic layer is equipped with the glass substrate 18 and the 2nd inorganic layer 20 arrange | positioned on the surface. The 2nd inorganic layer 20 is arrange | positioned in the outermost side in the glass substrate 22 with an inorganic layer so that it may closely_contact | adhere with the support substrate 16 with an inorganic layer mentioned above so that peeling is possible.
Below, the glass substrate 18 and the aspect of the 2nd inorganic layer 20 are explained in full detail.

(Glass substrate)
The glass substrate 18 includes a second inorganic layer 20 on the first main surface 18a, and an electronic device member is formed on the second main surface 18b opposite to the second inorganic layer 20 to constitute a device. . Here, the electronic device member refers to a member constituting at least a part of the device, such as a constituent member of a display device panel described later. Specific examples include a thin film transistor (TFT) and a color filter (CF). Examples of the device include a solar cell (PV), a liquid crystal panel (LCD), and an organic EL panel (OLED).

  The kind of the glass substrate 18 may be a common one, and examples thereof include a glass substrate for a display device such as an LCD or an OLED. The glass substrate 18 is excellent in chemical resistance and moisture permeability and has a low thermal shrinkage rate. As an index of the heat shrinkage rate, a linear expansion coefficient defined in JIS R 3102 (revised in 1995) is used.

  The glass substrate 18 is obtained by melting a glass raw material and molding the molten glass into a plate shape. Such a molding method may be a general one, and for example, a float method, a fusion method, a slot down draw method, a full call method, a rubber method, or the like is used. In addition, a glass substrate having a particularly small thickness can be obtained by heating a glass once formed into a plate shape to a moldable temperature, and stretching it by means of stretching or the like to make it thin (redraw method).

  The glass of the glass substrate 18 is not particularly limited, but non-alkali borosilicate glass, borosilicate glass, soda lime glass, high silica glass, and other oxide-based glasses mainly composed of silicon oxide are preferable. As the oxide glass, a glass having a silicon oxide content of 40 to 90% by mass in terms of oxide is preferable.

  As the glass of the glass substrate 18, glass suitable for the type of device and its manufacturing process is adopted. For example, a glass substrate for a liquid crystal panel is made of glass (non-alkali glass) that does not substantially contain an alkali metal component because the elution of an alkali metal component easily affects the liquid crystal (however, usually an alkaline earth metal) Ingredients are included). Thus, the glass of the glass substrate 18 is appropriately selected based on the type of device to be applied and its manufacturing process.

  The thickness of the glass substrate 18 is not particularly limited, but is usually 0.8 mm or less, preferably 0.3 mm or less, more preferably 0.8 mm or less from the viewpoint of reducing the thickness and / or weight of the glass substrate 18. It is 15 mm or less. If it exceeds 0.8 mm, the glass substrate 18 cannot meet the demand for thinning and / or lightening. In the case of 0.3 mm or less, it is possible to give good flexibility to the glass substrate 18. In the case of 0.15 mm or less, the glass substrate 18 can be wound into a roll. The thickness of the glass substrate 18 is preferably 0.03 mm or more for reasons such as easy manufacture of the glass substrate 18 and easy handling of the glass substrate 18.

  The glass substrate 18 may be composed of two or more layers. In this case, the material forming each layer may be the same material or a different material. In this case, “the thickness of the glass substrate” means the total thickness of all the layers.

(Second inorganic layer)
The second inorganic layer 20 is a layer disposed (fixed) on the glass substrate 18 and in contact with the first inorganic layer 14 of the support substrate 16 with an inorganic layer. By providing the layer 20 on the glass substrate 18, adhesion between the glass substrate 18 and the support substrate 16 with an inorganic layer can be suppressed even after treatment under high temperature conditions.
In addition to suppressing the adhesion of the glass substrate 18, the layer 20 can impart new optical characteristics, electrical characteristics, and the like to the glass substrate 18 by selecting the components constituting the layer 20. For example, when ITO is included as a component of the layer 20, conductivity can be imparted to the glass substrate 18.

The second inorganic layer 20 is a group consisting of metal oxide, metal nitride, metal oxynitride, metal carbide, metal carbonitride, metal silicide, and metal fluoride, like the first inorganic layer 14 described above. Including at least one selected from. Especially, it is preferable that a metal oxide is included at the point which the peelability of a glass substrate is more excellent.
Specific examples of the metal oxide, metal nitride, metal oxynitride, metal carbide, metal carbonitride, metal silicide, and metal fluoride are as described above.
The second inorganic layer 20 includes two or more selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, metal carbides, metal carbonitrides, metal silicides and metal fluorides. It may be.

  The first inorganic layer 14 and the second inorganic layer 20 include any of metal oxide, metal nitride, metal oxynitride, metal carbide, metal carbonitride, metal silicide, and metal fluoride. Such a component is preferably contained in both layers. In other words, it is preferable that the first inorganic layer 14 and the second inorganic layer 20 contain the same component among the above components. For example, it is preferable that the first inorganic layer 14 and the second inorganic layer 20 contain a metal oxide. If it is this aspect, after high temperature environment processing, peeling with the 1st inorganic layer 14 and the 2nd inorganic layer 20 will advance more easily.

  The second inorganic layer 20 preferably contains the metal oxide, metal nitride, metal oxynitride, metal carbide, metal carbonitride, metal silicide, or metal fluoride as a main component. Here, a main component means that these total content is 90 mass% or more with respect to the 2nd inorganic layer 20 whole quantity, It is preferable that it is 98 mass% or more, and 99 mass% More preferably, it is more preferably 99.999% by mass or more.

The thickness of the second inorganic layer 20 is not particularly limited, but is preferably 5 to 5000 nm and more preferably 10 to 500 nm in terms of maintaining the scratch resistance.
The second inorganic layer 20 is described as a single layer in FIG. 1, but may be a laminate of two or more layers.

  The 2nd inorganic layer 20 may be provided in a part on the surface of the glass substrate 18 in the range which does not impair the effect of this invention. For example, the second inorganic layer 20 may be provided on the surface of the glass substrate 18 in an island shape or a stripe shape.

The surface roughness (Ra) of the surface of the second inorganic layer 20 in contact with the first inorganic layer 14 (that is, the first inorganic layer surface 20a) is preferably 5 nm or less, and preferably 2 nm or less. More preferred. The lower limit is not particularly limited, but 0 is most preferable. If it is the said range, adhesiveness with the 1st inorganic layer 14 will become more favorable, and position shift etc. of the glass substrate 22 with an inorganic layer can be suppressed more.
Ra is measured according to JIS B 0601 (revised 2001).

The second inorganic layer 20 exhibits excellent heat resistance. Therefore, even if the glass laminate 10 is exposed to a high temperature condition, the chemical change of the layer itself hardly occurs, and it is difficult to form a chemical bond with the first inorganic layer 14 to be described later, and the support substrate 16 with the inorganic layer due to heavy peeling. Is less likely to adhere to the first inorganic layer 14.
The above heavy peeling means that the peel strength at the interface between the first inorganic layer 14 and the second inorganic layer 20 is the peel strength at the interface between the glass substrate 18 and the second inorganic layer 20 and the second It means that it becomes larger than any of the strength (bulk strength) of the material of the inorganic layer 20 itself. When heavy peeling occurs at the interface between the first inorganic layer 14 and the second inorganic layer 20, the components of the second inorganic layer 20 are likely to adhere to the surface of the first inorganic layer 14, and the surface is cleaned. It tends to be difficult. The adhesion of the second inorganic layer 20 to the surface of the first inorganic layer 14 means that the entire second inorganic layer 20 is adhered to the surface of the first inorganic layer 14 and that the surface of the second inorganic layer 20 is It means that some of the components on the surface of the second inorganic layer 20 are damaged and adhere to the surface of the first inorganic layer 14.

(Method for producing glass substrate with inorganic layer)
The manufacturing method in particular of the glass substrate 22 with an inorganic layer is not restrict | limited, A well-known method is employable similarly to the said support substrate 16 with an inorganic layer. For example, the method of providing the 2nd inorganic layer 20 which consists of a predetermined component on the glass substrate 18 by a vapor deposition method or sputtering method is mentioned.
As manufacturing conditions, optimum conditions are appropriately selected according to the materials used.
In addition, in order to control the surface property (for example, surface roughness Ra) of the 2nd inorganic layer 20 formed on the glass substrate 18 as needed, the process which scrapes the surface of the 2nd inorganic layer 20 is carried out. You may give it. Examples of the treatment include an ion sputtering method.

<Glass laminate and production method thereof>
The glass laminate 10 of the present invention is a support with an inorganic layer using the above-described first inorganic layer surface 14a of the support substrate 16 with an inorganic layer and the second inorganic layer surface 20a of the glass substrate 22 with an inorganic layer as a laminate surface. It is a laminate formed by laminating the substrate 16 and the glass substrate 22 with an inorganic layer so as to be peelable. In other words, it is a laminate in which the first inorganic layer 14 and the second inorganic layer 20 are interposed between the support substrate 12 and the glass substrate 18.
Although the manufacturing method in particular of the glass laminated body 10 of this invention is not restrict | limited, Usually, the support substrate 16 with an inorganic layer produced by the method mentioned above and the glass substrate 22 with an inorganic layer are prepared, and the support substrate 16 with an inorganic layer is prepared. A method of laminating both the exposed surface of the first inorganic layer 14 and the exposed surface of the second inorganic layer 20 of the glass substrate 22 with an inorganic layer as a laminated surface is preferable.
Specifically, there is a method in which the support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer are stacked in a normal pressure environment, and then bonded using a roll or a press. It is preferable because the support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer are more closely adhered by pressure bonding with a roll or a press. Further, it is preferable because bubbles mixed between the support substrate 16 with an inorganic layer and the glass substrate 22 with an inorganic layer are removed relatively easily by pressure bonding with a roll or a press.

  When pressure bonding is performed by a vacuum laminating method or a vacuum pressing method, it is more preferable because it is preferable to suppress mixing of bubbles and ensure good adhesion. By press-bonding under vacuum, even if minute bubbles remain, there is an advantage that the bubbles do not grow by heating and are less likely to cause distortion defects.

When the support substrate 16 with the inorganic layer and the glass substrate 22 with the inorganic layer are detachably adhered, the surfaces of the first inorganic layer 14 and the second inorganic layer 20 on the side in contact with each other are sufficiently washed, It is preferable to laminate in an environment with a high degree of cleanliness. The higher the degree of cleanness, the better the flatness.
The cleaning method is not particularly limited, and examples thereof include a method of cleaning the surface of the first inorganic layer 14 or the second inorganic layer 20 with an alkaline aqueous solution, and further using water.

The glass laminate 10 of the present invention can be used for various applications, for example, manufacturing electronic parts such as a display device panel, PV, a thin film secondary battery, and a semiconductor wafer having a circuit formed on the surface, which will be described later. The use to do is mentioned. In this application, the glass laminate 10 is often exposed (for example, 1 hour or longer) under high temperature conditions (for example, 450 ° C. or higher).
Here, the display device panel includes LCD, OLED, electronic paper, plasma display panel, field emission panel, quantum dot LED panel, MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

<Electronic device and manufacturing method thereof>
Next, preferred embodiments of the electronic device and the manufacturing method thereof will be described in detail.
FIG. 2 is a schematic cross-sectional view sequentially showing each manufacturing process in a preferred embodiment of the method for manufacturing an electronic device of the present invention. A preferred embodiment of the electronic device of the present invention includes a member forming step and a separation step.
Hereinafter, the materials used in each step and the procedure thereof will be described in detail with reference to FIG. First, a member formation process is explained in full detail.

[Member forming process]
A member formation process is a process of forming the member for electronic devices on the glass substrate in a glass laminated body.
More specifically, as shown in FIG. 2A, in this step, the electronic device member 24 is formed on the second main surface 18b of the glass substrate 18, and the electronic device member-equipped laminate 26 is manufactured. Is done.
First, the electronic device member 24 used in this step will be described in detail, and the procedure of the subsequent steps will be described in detail.

(Electronic device components (functional elements))
The electronic device member 24 is a member that is formed on the second main surface 18b of the glass substrate 18 in the glass laminate 10 and constitutes at least a part of the electronic device. More specifically, examples of the electronic device member 24 include a member used for a display panel, a solar cell, a thin film secondary battery, and an electronic component such as a semiconductor wafer having a circuit formed on its surface. Examples of the display device panel include an organic EL panel, a plasma display panel, a field emission panel, and the like.

For example, as a member for a solar cell, a silicon type includes a transparent electrode such as tin oxide of a positive electrode, a silicon layer represented by p layer / i layer / n layer, a metal of a negative electrode, and the like. And various members corresponding to the dye-sensitized type, the quantum dot type, and the like.
Further, as a member for a thin film secondary battery, in the lithium ion type, a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a current collecting layer, a resin as a sealing layer, etc. In addition, various members corresponding to nickel hydrogen type, polymer type, ceramic electrolyte type and the like can be mentioned.
In addition, as a member for electronic components, in CCD and CMOS, metal of conductive part, silicon oxide and silicon nitride of insulating part, etc., other various sensors such as pressure sensor and acceleration sensor, rigid printed board, flexible printed board And various members corresponding to a rigid flexible printed circuit board.

(Process procedure)
The manufacturing method of the laminated body 26 with the member for electronic devices mentioned above is not specifically limited, According to the conventionally well-known method according to the kind of structural member of the member for electronic devices, the 2nd main of the glass substrate 18 of the glass laminated body 10 is carried out. An electronic device member 24 is formed on the surface 18b.
The electronic device member 24 is not all of the members finally formed on the second main surface 18b of the glass substrate 18 (hereinafter referred to as “all members”), but a part of all the members (hereinafter referred to as “parts”). May be referred to as a member. The glass substrate with a partial member peeled from the support substrate 16 with an inorganic layer can be used as a glass substrate with all members (corresponding to an electronic device described later) in the subsequent steps.
Moreover, the member for electronic devices may be formed in the peeling surface (1st main surface) in the glass substrate with all the members peeled from the support substrate 16 with an inorganic layer. Moreover, an electronic device can also be manufactured by assembling a laminate with all members and then peeling off the support substrate 16 with an inorganic layer from the laminate with all members. Furthermore, an electronic device can also be manufactured by assembling an electronic device using two laminates with all members, and then peeling the two support substrates 16 with inorganic layers from the laminate with all members.

  For example, taking the case of manufacturing an OLED as an example, in order to form an organic EL structure on the surface of the second main surface 18b of the glass substrate 18 of the glass laminate 10, a transparent electrode is further formed. Various layer formation and processing such as vapor-depositing hole injection layer, hole transport layer, light emitting layer, electron transport layer, etc. on the surface on which is formed, forming a back electrode, sealing with a sealing plate, etc. Done. Specific examples of the layer formation and processing include film formation processing, vapor deposition processing, sealing plate adhesion processing, and the like.

  In addition, for example, the TFT-LCD manufacturing method is formed on the second main surface 18b of the glass substrate 18 of the glass laminate 10 by a general film forming method such as a CVD method and a sputtering method using a resist solution. Forming a thin film transistor (TFT) by patterning a metal film and a metal oxide film to be formed, and patterning a resist solution on the second main surface 18b of the glass substrate 18 of another glass laminate 10 And a CF forming step for forming a color filter (CF) and a bonding step for laminating a device substrate with TFT and a device substrate with CF.

In the TFT formation process and the CF formation process, the TFT and CF are formed on the second main surface 18b of the glass substrate 18 by using a well-known photolithography technique, etching technique, or the like. At this time, a resist solution is used as a coating solution for pattern formation.
In addition, before forming TFT and CF, you may wash | clean the 2nd main surface 18b of the glass substrate 18 as needed. As a cleaning method, known dry cleaning or wet cleaning can be used.

  In the bonding step, a liquid crystal material is injected and laminated between the laminated body with TFT and the laminated body with CF. Examples of the method for injecting the liquid crystal material include a reduced pressure injection method and a drop injection method.

[Separation process]
The separation step separates the glass substrate 22 with the inorganic layer and the support substrate 16 with the inorganic layer, on which the electronic device member 24 is laminated, from the laminate 26 with the electronic device member obtained in the member forming step, This is a step of obtaining an electronic device 28 (a glass substrate with an electronic device member) including the electronic device member 24, the glass substrate 18 and the second inorganic layer 20.
In the case where the electronic device member 24 on the glass substrate 18 at the time of peeling is a part of the formation of all necessary constituent members, the remaining constituent members can be formed on the glass substrate 18 after separation.

  The method of peeling the 1st main surface 14a of the 1st inorganic layer 14 and the 1st main surface 20a of the 2nd inorganic layer 20 is not specifically limited. For example, a sharp blade-like object is inserted into the interface between the first inorganic layer 14 and the second inorganic layer 20 to give a trigger for peeling, and then a mixed fluid of water and compressed air is sprayed. Can be peeled off. Preferably, the electronic device member-attached laminate 26 is placed on the surface plate so that the support substrate 12 is on the upper side and the electronic device member 24 side is on the lower side, and the electronic device member 24 side is vacuum-adsorbed on the surface plate. (In the case where support substrates are laminated on both surfaces, the steps are sequentially performed). In this state, the blade is first inserted into the interface between the first inorganic layer 14 and the second inorganic layer 20. Then, the support substrate 12 side is sucked by a plurality of vacuum suction pads, and the vacuum suction pads are raised in order from the vicinity of the place where the blade is inserted. If it does so, an air layer will be formed in the interface of the 1st inorganic layer 14 and the 2nd inorganic layer 20, the air layer will spread over the whole surface of an interface, and the support substrate 16 with an inorganic layer can be peeled easily.

  The electronic device 28 obtained by the above process is suitable for manufacturing a small display device used for a mobile terminal such as a mobile phone or a PDA. The display device is mainly an LCD or an OLED, and the LCD includes a TN type, STN type, FE type, TFT type, MIM type, IPS type, VA type, and the like. Basically, the present invention can be applied to both passive drive type and active drive type display devices.

EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
In Example 1 and Comparative Example 1 below, as a glass substrate, a glass plate made of non-alkali borosilicate glass (length 720 mm, width 600 mm, plate thickness 0.3 mm, linear expansion coefficient 38 × 10 −7 / ° C., Asahi Glass Co., Ltd.) Product name “AN100”) was used. Further, as the support substrate, a glass plate made of the same alkali-free borosilicate glass (length 720 mm, width 600 mm, plate thickness 0.4 mm, linear expansion coefficient 38 × 10 −7 / ° C., trade name “AN100” manufactured by Asahi Glass Co., Ltd.) It was used.

<Example 1>
One main surface of the support substrate was cleaned with pure water and then cleaned with UV. Furthermore, a 150 nm thick ITO layer (corresponding to the first inorganic layer) is formed on the cleaned surface by magnetron sputtering (heating temperature 300 ° C., film forming pressure 5 mTorr, power density 0.5 W / cm 2 ). And the support substrate with an inorganic layer was obtained. The surface roughness Ra of the ITO layer was 0.85 nm.

Next, one main surface of the glass substrate was cleaned with pure water and then cleaned by UV cleaning. Furthermore, a 150 nm thick ITO layer (corresponding to the second inorganic layer) is formed on the cleaned surface by magnetron sputtering (heating temperature 300 ° C., film forming pressure 5 mTorr, power density 0.5 W / cm 2 ). And the glass substrate with an inorganic layer was obtained. The surface roughness Ra of the ITO layer was 0.85 nm.

Thereafter, the exposed surface of the ITO layer of the support substrate with the inorganic layer and the exposed surface of the ITO layer of the glass substrate with the inorganic layer were washed with an aqueous alkali solution and washed with water, and then the cleaned surfaces were placed at room temperature. The glass laminate A1 was obtained by pasting with a vacuum press.
In the obtained glass laminate A1, the support substrate with an inorganic layer and the glass substrate with an inorganic layer were in close contact with each other without generating bubbles, and there was no distortion defect and smoothness was good.

The glass laminate A1 was heat-treated at 450 ° C. for 1 hour in an air atmosphere.
Next, a peel test was performed. Specifically, first, the second main surface of the glass substrate in the glass laminate A1 was fixed on a fixed base. On the other hand, the second main surface of the support substrate was adsorbed by an adsorption pad. Next, a knife having a thickness of 0.4 mm is inserted into the interface between the first inorganic layer and the second inorganic layer, which is one of the four corners of the glass laminate A1, and is inorganic. The glass substrate with a layer was peeled off slightly to give an opportunity for peeling. Next, the suction pad was moved in a direction away from the fixed base, and the supporting substrate with the inorganic layer and the glass substrate with the inorganic layer were peeled off. There was no residue on the surface of the second inorganic layer of the peeled glass substrate with an inorganic layer.

<Comparative Example 1>
One main surface of the support substrate was cleaned with pure water and then cleaned with UV. Furthermore, a 150 nm thick ITO layer (corresponding to the first inorganic layer) is formed on the cleaned surface by magnetron sputtering (heating temperature 300 ° C., film forming pressure 5 mTorr, power density 0.5 W / cm 2 ). And the support substrate with an inorganic layer was obtained. The surface roughness Ra of the ITO layer was 0.85 nm.

Next, one main surface of the glass substrate was cleaned with pure water and then cleaned by UV cleaning. After cleaning the cleaned surface of the glass substrate and the exposed surface of the ITO layer of the support substrate with an inorganic layer with an alkaline aqueous solution and with water, the cleaned surfaces are bonded together by a vacuum press at room temperature to laminate the glass Body B1 was obtained.
In the obtained glass laminate B1, the support substrate with an inorganic layer and the glass substrate were in close contact with each other without generating bubbles, had no distortion-like defects, and had good smoothness.

The glass laminate B1 was heat-treated at 450 ° C. for 1 hour in an air atmosphere.
Next, according to the same procedure as in Example 1, an attempt was made to peel off the glass substrate by inserting a knife into the interface between the first inorganic layer of the support substrate with an inorganic layer and the glass substrate, but the glass substrate was peeled off. I couldn't.

<Example 2>
In this example, an OLED was produced using the glass laminate produced in Example 1.
More specifically, a molybdenum film was formed by sputtering on the second main surface of the glass substrate in the glass laminate, and a gate electrode was formed by etching using photolithography. Next, silicon nitride, intrinsic amorphous silicon, and n-type amorphous silicon are formed in this order on the second main surface side of the glass substrate provided with the gate electrode by plasma CVD, and then molybdenum is formed by sputtering. Then, a gate insulating film, a semiconductor element portion, and source / drain electrodes were formed by etching using a photolithography method. Next, after forming a passivation layer by further forming silicon nitride on the second main surface side of the glass substrate by plasma CVD, indium tin oxide is formed by sputtering and photolithography is used. A pixel electrode was formed by etching.
Subsequently, on the second main surface side of the glass substrate, 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine as a hole injection layer and bis [ (N-naphthyl) -N-phenyl] benzidine, 8-quinolinol aluminum complex (Alq 3 ) as a light emitting layer, 2,6-bis [4- [N- (4-methoxyphenyl) -N-phenyl] aminostyryl] A mixture of 40% by volume of naphthalene-1,5-dicarbonitrile (BSN-BCN) and Alq 3 as an electron transport layer were formed in this order, and then formed on the second main surface side of the glass substrate by sputtering. Aluminum was deposited, and a counter electrode was formed by etching using a photolithography method.Next, ultraviolet light was formed on the second main surface of the glass substrate on which the counter electrode was formed. Another glass substrate was bonded and sealed through a chemical adhesive layer, and the glass laminate having the organic EL structure on the glass substrate obtained by the above procedure was laminated with an electronic device member. Applies to the body.
Subsequently, after the sealing body side of the obtained glass laminate is vacuum-adsorbed on a surface plate, the thickness 0 is applied to the interface between the first inorganic layer and the second inorganic layer at the corner of the glass laminate. A 1 mm stainless steel cutting tool was inserted, and the support substrate with an inorganic layer was separated from the glass laminate to obtain an OLED panel (corresponding to an electronic device, hereinafter referred to as panel A). When an IC driver was connected to the manufactured panel A and driven under normal temperature and normal pressure, display unevenness was not observed in the driving region.

<Example 3>
In this example, an LCD was produced using the glass laminate produced in Example 1.
Two glass laminates were prepared. First, a molybdenum film was formed by sputtering on the second main surface of the glass substrate in one glass laminate, and a gate electrode was formed by etching using photolithography. Next, silicon nitride, intrinsic amorphous silicon, and n-type amorphous silicon are formed in this order on the second main surface side of the glass substrate provided with the gate electrode by plasma CVD, and then molybdenum is formed by sputtering. Then, a gate insulating film, a semiconductor element portion, and source / drain electrodes were formed by etching using a photolithography method. Next, after forming a passivation layer by further forming silicon nitride on the second main surface side of the glass substrate by plasma CVD, indium tin oxide was formed by sputtering and photolithography was used. A pixel electrode was formed by etching. Next, a polyimide resin liquid was applied on the second main surface of the glass substrate on which the pixel electrode was formed by a roll coating method, an alignment layer was formed by thermosetting, and rubbing was performed. The obtained glass laminate is referred to as a glass laminate X1.
Next, a chromium film was formed on the second main surface of the glass substrate in the other glass laminate by a sputtering method, and a light-shielding layer was formed by etching using a photolithography method. Next, a color resist was further applied by a die coating method to the second main surface side of the glass substrate provided with the light shielding layer, and a color filter layer was formed by a photolithography method and thermal curing. Next, an indium tin oxide film was further formed on the second main surface side of the glass substrate by a sputtering method to form a counter electrode. Next, an ultraviolet curable resin liquid was applied to the second main surface of the glass substrate provided with the counter electrode by a die coating method, and columnar spacers were formed by a photolithography method and heat curing. Next, a polyimide resin solution was applied on the second main surface of the glass substrate on which the columnar spacers were formed by a roll coating method, an alignment layer was formed by thermosetting, and rubbing was performed. Next, after the sealing resin liquid is drawn in a frame shape on the second main surface side of the glass substrate by the dispenser method, and the liquid crystal is dropped in the frame by the dispenser method, the above-described glass laminate X1 is used. The 2nd main surface side of the glass substrate of a sheet of glass laminated body was bonded together, and the laminated body which has an LCD panel by ultraviolet curing and thermosetting was obtained. Hereinafter, the laminate having the LCD panel is referred to as a laminate X2 with a panel.
Next, LCD panel B (corresponding to an electronic device) composed of a substrate on which a TFT array is formed and a substrate on which a color filter is formed is peeled off from the laminate X2 with a panel in the same manner as in Example 1 and the substrate with the inorganic layer is peeled off Got.
When an IC driver was connected to the manufactured LCD panel B and driven under normal temperature and normal pressure, no display unevenness was observed in the driving region.

DESCRIPTION OF SYMBOLS 10 Glass laminated body 12 Support substrate 14 1st inorganic layer 16 Support substrate 18 with an inorganic layer Glass substrate 20 Second inorganic layer 22 Glass substrate with an inorganic layer 24 Electronic device member 26 Laminated body 28 with electronic device member 28 Electronic device

Claims (5)

  1. A support substrate with an inorganic layer comprising a support substrate and a first inorganic layer disposed on the support substrate;
    A glass substrate and a glass substrate with an inorganic layer provided with a second inorganic layer disposed on the glass substrate;
    The first inorganic layer and the second inorganic layer are at least selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, metal carbides, metal carbonitrides, metal silicides, and metal fluorides. Including one,
    Using the surface of the first inorganic layer of the support substrate with an inorganic layer and the surface of the second inorganic layer of the glass substrate with an inorganic layer as a laminated surface, the support substrate with an inorganic layer and the glass substrate with an inorganic layer are A glass laminate that is laminated in a peelable manner.
  2.   The glass laminate according to claim 1, wherein the first inorganic layer and the second inorganic layer include at least a metal oxide.
  3.   The glass laminate according to claim 1 or 2, wherein a surface roughness Ra of the first inorganic layer and a surface roughness Ra of the second inorganic layer are 5 nm or less.
  4.   The glass laminate according to any one of claims 1 to 3, wherein the support substrate with an inorganic layer and the glass substrate with an inorganic layer can be peeled even after heat treatment at 450 ° C for 1 hour.
  5. Forming a member for an electronic device on the surface of the glass substrate in the glass laminate according to any one of claims 1 to 4, and a member forming step for obtaining a laminate with a member for an electronic device;
    A separation step of removing the support substrate with an inorganic layer from the laminate with the member for electronic device and obtaining an electronic device having the support substrate with an inorganic layer and the electronic device member.
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JP2015093405A (en) * 2013-11-11 2015-05-18 旭硝子株式会社 Method for producing glass laminate and electronic device
CN104743400A (en) * 2013-12-25 2015-07-01 旭硝子株式会社 Packaging method of substrate with adsorption layer, packaging body and packaging apparatus of substrate with adsorption layer
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WO2016017649A1 (en) * 2014-08-01 2016-02-04 旭硝子株式会社 Glass laminate, supporting substrate with inorganic layer, method for manufacturing electronic device, and method for producing supporting substrate with inorganic layer
WO2016017650A1 (en) * 2014-08-01 2016-02-04 旭硝子株式会社 Glass laminate and support substrate equipped with inorganic film, method for manufacturing said glass laminate and said support substrate, and method for manufacturing electronic device
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US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
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US10538452B2 (en) 2012-12-13 2020-01-21 Corning Incorporated Bulk annealing of glass sheets
US9889635B2 (en) 2012-12-13 2018-02-13 Corning Incorporated Facilitated processing for controlling bonding between sheet and carrier
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
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